CN102884785B - 固态图像拾取装置及其驱动方法 - Google Patents

固态图像拾取装置及其驱动方法 Download PDF

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Publication number
CN102884785B
CN102884785B CN201180022660.4A CN201180022660A CN102884785B CN 102884785 B CN102884785 B CN 102884785B CN 201180022660 A CN201180022660 A CN 201180022660A CN 102884785 B CN102884785 B CN 102884785B
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China
Prior art keywords
pixel
transistor
reset
control electrode
amplification transistor
Prior art date
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Expired - Fee Related
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CN201180022660.4A
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English (en)
Chinese (zh)
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CN102884785A (zh
Inventor
筱原真人
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Canon Inc
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Canon Inc
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201180022660.4A 2010-05-10 2011-05-06 固态图像拾取装置及其驱动方法 Expired - Fee Related CN102884785B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010108786A JP5709404B2 (ja) 2010-05-10 2010-05-10 固体撮像装置およびその駆動方法
JP2010-108786 2010-05-10
PCT/JP2011/002548 WO2011142104A1 (en) 2010-05-10 2011-05-06 Solid-state image pickup apparatus and drive method therefor

Publications (2)

Publication Number Publication Date
CN102884785A CN102884785A (zh) 2013-01-16
CN102884785B true CN102884785B (zh) 2016-02-24

Family

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Family Applications (1)

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CN201180022660.4A Expired - Fee Related CN102884785B (zh) 2010-05-10 2011-05-06 固态图像拾取装置及其驱动方法

Country Status (5)

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US (1) US9197832B2 (enExample)
JP (1) JP5709404B2 (enExample)
CN (1) CN102884785B (enExample)
DE (1) DE112011101626T5 (enExample)
WO (1) WO2011142104A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202633312U (zh) * 2012-01-11 2012-12-26 格科微电子(上海)有限公司 图像传感器及源跟随器
JP2015177034A (ja) * 2014-03-14 2015-10-05 キヤノン株式会社 固体撮像装置、その製造方法、及びカメラ
US9456157B2 (en) * 2014-11-25 2016-09-27 Semiconductor Components Industries, Llc Image sensor pixels having p-channel source follower transistors and increased photodiode charge storage capacity
US9773832B2 (en) 2014-12-10 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6218799B2 (ja) * 2015-01-05 2017-10-25 キヤノン株式会社 撮像素子及び撮像装置
JP6924703B2 (ja) * 2015-03-05 2021-08-25 ダートマス カレッジ イメージセンサ画素のゲートレスリセット
US9716852B2 (en) 2015-04-03 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Broadcast system
KR20170061602A (ko) 2015-11-26 2017-06-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
WO2019146316A1 (ja) * 2018-01-24 2019-08-01 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器
CN119562624B (zh) * 2025-01-24 2025-05-16 合肥晶合集成电路股份有限公司 像素单元及驱动方法、图像传感器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0708555A2 (en) * 1994-10-19 1996-04-24 Canon Kabushiki Kaisha Photoelectric conversion apparatus
CN1496112A (zh) * 2002-08-21 2004-05-12 ������������ʽ���� 摄像装置

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US5210434A (en) * 1983-07-02 1993-05-11 Canon Kabushiki Kaisha Photoelectric converter with scanning circuit
JPH084131B2 (ja) 1987-01-29 1996-01-17 キヤノン株式会社 光電変換装置
JPH08125868A (ja) 1994-10-19 1996-05-17 Canon Inc 画像処理装置及び方法
US6552323B2 (en) * 2000-12-06 2003-04-22 Eastman Kodak Company Image sensor with a shared output signal line
JP2004104116A (ja) * 2002-08-21 2004-04-02 Canon Inc 撮像装置
JP4916101B2 (ja) * 2004-09-01 2012-04-11 キヤノン株式会社 光電変換装置、固体撮像装置及び固体撮像システム
JP4752447B2 (ja) * 2005-10-21 2011-08-17 ソニー株式会社 固体撮像装置およびカメラ
JP4361072B2 (ja) * 2006-06-15 2009-11-11 日本テキサス・インスツルメンツ株式会社 固体撮像装置及びその製造方法
JP4425950B2 (ja) * 2007-06-01 2010-03-03 シャープ株式会社 固体撮像装置および電子情報機器
WO2009031301A1 (ja) * 2007-09-05 2009-03-12 Tohoku University 固体撮像素子
US7745773B1 (en) * 2008-04-11 2010-06-29 Foveon, Inc. Multi-color CMOS pixel sensor with shared row wiring and dual output lines
JP2010108786A (ja) 2008-10-30 2010-05-13 Yazaki Corp 大電流用ヒューズ
US8130302B2 (en) * 2008-11-07 2012-03-06 Aptina Imaging Corporation Methods and apparatus providing selective binning of pixel circuits

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0708555A2 (en) * 1994-10-19 1996-04-24 Canon Kabushiki Kaisha Photoelectric conversion apparatus
CN1496112A (zh) * 2002-08-21 2004-05-12 ������������ʽ���� 摄像装置

Also Published As

Publication number Publication date
CN102884785A (zh) 2013-01-16
JP5709404B2 (ja) 2015-04-30
US9197832B2 (en) 2015-11-24
JP2011238768A (ja) 2011-11-24
DE112011101626T5 (de) 2013-03-21
US20130056619A1 (en) 2013-03-07
WO2011142104A1 (en) 2011-11-17

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