DE112011101626T5 - Festkörperbildaufnahmevorrichtug und Ansteuerverfahren dafür - Google Patents

Festkörperbildaufnahmevorrichtug und Ansteuerverfahren dafür Download PDF

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Publication number
DE112011101626T5
DE112011101626T5 DE112011101626T DE112011101626T DE112011101626T5 DE 112011101626 T5 DE112011101626 T5 DE 112011101626T5 DE 112011101626 T DE112011101626 T DE 112011101626T DE 112011101626 T DE112011101626 T DE 112011101626T DE 112011101626 T5 DE112011101626 T5 DE 112011101626T5
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DE
Germany
Prior art keywords
transistor
pixel
reset
control electrode
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE112011101626T
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German (de)
English (en)
Inventor
Mahito Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE112011101626T5 publication Critical patent/DE112011101626T5/de
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE112011101626T 2010-05-10 2011-05-06 Festkörperbildaufnahmevorrichtug und Ansteuerverfahren dafür Ceased DE112011101626T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010-108786 2010-05-10
JP2010108786A JP5709404B2 (ja) 2010-05-10 2010-05-10 固体撮像装置およびその駆動方法
PCT/JP2011/002548 WO2011142104A1 (en) 2010-05-10 2011-05-06 Solid-state image pickup apparatus and drive method therefor

Publications (1)

Publication Number Publication Date
DE112011101626T5 true DE112011101626T5 (de) 2013-03-21

Family

ID=44504096

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112011101626T Ceased DE112011101626T5 (de) 2010-05-10 2011-05-06 Festkörperbildaufnahmevorrichtug und Ansteuerverfahren dafür

Country Status (5)

Country Link
US (1) US9197832B2 (enExample)
JP (1) JP5709404B2 (enExample)
CN (1) CN102884785B (enExample)
DE (1) DE112011101626T5 (enExample)
WO (1) WO2011142104A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102610623A (zh) * 2012-01-11 2012-07-25 格科微电子(上海)有限公司 图像传感器及源跟随器
JP2015177034A (ja) * 2014-03-14 2015-10-05 キヤノン株式会社 固体撮像装置、その製造方法、及びカメラ
US9456157B2 (en) * 2014-11-25 2016-09-27 Semiconductor Components Industries, Llc Image sensor pixels having p-channel source follower transistors and increased photodiode charge storage capacity
US9773832B2 (en) 2014-12-10 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6218799B2 (ja) * 2015-01-05 2017-10-25 キヤノン株式会社 撮像素子及び撮像装置
CN108140652B (zh) * 2015-03-05 2022-08-30 达特茅斯学院 图像传感器像素的无栅极复位
US9716852B2 (en) 2015-04-03 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Broadcast system
KR20170061602A (ko) 2015-11-26 2017-06-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
WO2019146316A1 (ja) * 2018-01-24 2019-08-01 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器
CN119562624B (zh) * 2025-01-24 2025-05-16 合肥晶合集成电路股份有限公司 像素单元及驱动方法、图像传感器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63186466A (ja) 1987-01-29 1988-08-02 Canon Inc 光電変換装置
JP2010108786A (ja) 2008-10-30 2010-05-13 Yazaki Corp 大電流用ヒューズ

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5210434A (en) * 1983-07-02 1993-05-11 Canon Kabushiki Kaisha Photoelectric converter with scanning circuit
US5933188A (en) * 1994-10-19 1999-08-03 Canon Kabushiki Kaisha Photoelectric conversion apparatus and method with reset
JPH08125868A (ja) 1994-10-19 1996-05-17 Canon Inc 画像処理装置及び方法
US6552323B2 (en) * 2000-12-06 2003-04-22 Eastman Kodak Company Image sensor with a shared output signal line
JP2004104116A (ja) * 2002-08-21 2004-04-02 Canon Inc 撮像装置
CN1225897C (zh) * 2002-08-21 2005-11-02 佳能株式会社 摄像装置
JP4916101B2 (ja) * 2004-09-01 2012-04-11 キヤノン株式会社 光電変換装置、固体撮像装置及び固体撮像システム
JP4752447B2 (ja) * 2005-10-21 2011-08-17 ソニー株式会社 固体撮像装置およびカメラ
JP4361072B2 (ja) * 2006-06-15 2009-11-11 日本テキサス・インスツルメンツ株式会社 固体撮像装置及びその製造方法
JP4425950B2 (ja) * 2007-06-01 2010-03-03 シャープ株式会社 固体撮像装置および電子情報機器
EP2190185B1 (en) * 2007-09-05 2013-11-06 Tohoku University Solid-state image sensor
US7745773B1 (en) * 2008-04-11 2010-06-29 Foveon, Inc. Multi-color CMOS pixel sensor with shared row wiring and dual output lines
US8130302B2 (en) * 2008-11-07 2012-03-06 Aptina Imaging Corporation Methods and apparatus providing selective binning of pixel circuits

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63186466A (ja) 1987-01-29 1988-08-02 Canon Inc 光電変換装置
JP2010108786A (ja) 2008-10-30 2010-05-13 Yazaki Corp 大電流用ヒューズ

Also Published As

Publication number Publication date
JP5709404B2 (ja) 2015-04-30
JP2011238768A (ja) 2011-11-24
US9197832B2 (en) 2015-11-24
CN102884785B (zh) 2016-02-24
US20130056619A1 (en) 2013-03-07
WO2011142104A1 (en) 2011-11-17
CN102884785A (zh) 2013-01-16

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