CN1028817C - 半导体装置的层间绝缘膜的形成方法 - Google Patents

半导体装置的层间绝缘膜的形成方法 Download PDF

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CN1028817C
CN1028817C CN92112536A CN92112536A CN1028817C CN 1028817 C CN1028817 C CN 1028817C CN 92112536 A CN92112536 A CN 92112536A CN 92112536 A CN92112536 A CN 92112536A CN 1028817 C CN1028817 C CN 1028817C
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formation method
interlayer dielectric
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bpsg
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CN1073551A (zh
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金昶圭
洪昌基
郑佑仁
安容彻
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Samsung Electronics Co Ltd
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Abstract

本发明的目的在于通过遮断与硫酸沸液及大气中的原子之间的反应，减轻来自外部的冲击，防止高浓度BPSG的破坏，从而提供一种在低温下良好的半导体装置的绝缘膜形成方法。本发明包括下面的步骤：在形成元件的半导体基底上沉积含有高浓度的硼元素及磷元素的绝缘膜，在上述的沉积绝缘膜的表面使用等离子进行表面处理，以及在低温下进行回流处理。

Description

本发明涉及半导体装置的层间绝缘膜的形成方法，具体地说，本发明涉及能够在硼磷·硅酸盐玻璃沉积之后进行表面处理时克服硼及磷元素的浓度限制并防止因硫酸蒸煮引起的侵蚀的半导体装置层间绝缘膜形成方法。
一般在大规模集成（VLSI）电路的制造过程中，最好以低于，1100℃的温度进行磷·硅酸盐玻璃的回流处理，其原因是如果高于这个温度的话将使半导体结的杂质扩散情况发生变化。此外，还为了不使MOS门电路的氧化膜在高温（900℃）工艺中暴露出来。但是，人们希望具有流动性的玻璃能够容易地覆盖住基底上比较陡峭的阶梯。另外，由于硼磷硅酸盐（B2O3-P2O5-SiO2）玻璃（BPSG）形成了同样的三种成份的氧化膜系统，700℃左右的较低的玻璃流动温度通过在硅酸盐玻璃中添加杂质乙硼烷（B2H6）来达到。
BPSG流体的存在取决于膜的成份、流体温度、流动时间以及BPSG流体周围的环境气体。有报告说，硼元素的浓度每增加1%重量百分比，流体温度将减少40℃。一般情况下，磷元素的浓度超过5%重量百分比时，再增加磷浓度的话将不会使BPSG的温度进 一步减小。硼元素的浓度范围取决于膜的稳定性。亦即，含有5%重量百分比以上的BPSG膜的吸收性非常强，有趋于不稳定的倾向。因此，在使用中，在使用后必须马上进行后面的积层工艺。另外，在通常的炉处理步骤中，用比原有温度高的100-175℃进行30秒的快速退火，就能生成均匀的BPSG玻璃流体。流体环路周围的环境气体对流体也施加额外的影响。使用蒸汽代替氮气用作环境气体时，要求可达到最低限度的流体温度低至70℃。
除了上述的低温流动性之外，BPSG玻璃（或者磷·硅酸盐玻璃）还吸附羟离子，显示出较低的应力。有时，因掺杂的缘故BPSG对于硅而言是不希望的掺杂源，借助于硼元素的高浓度增加磷的向外扩散。
由于BPSG具有上述特征，因此，最好它常被用于使用臭氧和有机物的常压CVD中。由NEC研究开发中心于1987年7月出版的第94期“VLSI    Development（VLSV开发）”杂志中由Y.IKEDA，Y.NUMASAWA及M.SAKAMOTO所写的“Ozone/Organic    Source    APCVD    for    ULSI    Reflow    Glass    Films”（用于ULSI回流玻璃膜的臭氧/有机源APCVD）”一文中就示出的这样的例子。
直至今天，在BPSG用作层间绝缘膜时，由于元件的尺寸已达亚微米级，进行BPSG回流时的热冲击将造成半导体结破坏，因此，必须引入BPSG的低温回流处理。在上面提到的文献中，利用 了BPSG的沉积后续处理进行硫酸蒸煮及BPSG回流，从而使层间绝缘层平坦化。图2是根据现有技术的工艺流程图。图2A是将形成的导电线1的图形。图2B是表示在上述的导电线1之上进行BPSG2沉积的示意图，在高浓度（硼元素浓度在4-10%重量百分比以上，磷元素浓度在4-10%重量百分比以上）BPSG沉积之后不是进行表面处理，而是进行硫酸蒸煮，之后再进行BPSG回流。
但是，最后人们发现有些元件（如64M    DRAM中）需要850℃以上的低温BPSG流。BPSG中的硼元素和磷元素的最外层电子数与硅离子不同，硼的外层电子数将从3变成4，而磷的最外层电子配置数将从5变为4。与此同时将造成氧离子匮乏或者过剩，造成原子间的网络构造变弱，从而使融点降低。硼元素及磷元素的浓度增加越多，原子间的网络结构将变得越弱，融点就越低。此外，在硼、磷元素的浓度很高时进行BPSG膜沉积的话，将因硫酸蒸煮产生环境湿度式损伤，在膜中会发生裂缝。即使放置在大气中，也会与大气中的水分发生反应形成裂缝，这样原先使用BPSG所期望达到的目标就不会达到。
本发明就是为了解决上述问题而完成的，本发明的目的在于提供一种能在BPSG沉积后进行表面处理时遮断与硫酸沸液及大气中的原子进行的反应、防止来自外部的冲击的半导体装置的层间绝缘膜形成方法。
另外，本发明还提供一种通过防止基于高浓度的硼元素和磷元素的BPSG的冲击，避免BPSG的裂缝和破裂，在低温下也能进行良好的回流的半导体装置的层间绝缘膜的形成方法。
本发明提供的用于实现上述目的的半导体装置的层间绝缘膜的形成方法包括下列步骤：
在准备好的基底上沉积含有高浓度的硼元素及磷元素的SiO2，SiNx，Al2O3等金属氧化物型绝缘膜，
在上面的沉积绝缘膜的表面使用等离子体进行表面处理，以及
在等离子表面处理后再在低温下进行回流处理。
另外，本发明提供的半导体装置的层间绝缘膜的形成方法的特征还在于：将N2O，O2及O3构成的气体组中的一种用作上述表面处理中使用的等离子气源。
下面，参照附图详细描述本发明的最佳实施例。附图中，
图1.是根据本发明的工艺流程而形成的基底截面图。
图2.是根据先有技术中的工艺流程而形成的基底截面图。
图3-4.根据本发明进行表面处理后的SEM截面图。
图5.根据先有技术进行表面处理的SEM截面图。
在各图中，1表示导电线，2表示硼磷硅酸盐玻璃（BPSG），3表示等离子。
图1为根据本发明的每一步骤的半导体装置截面图。图1A为导电线1形成后的状况，图1B表示在上述的导电线1上沉积了 BPSG2之后的状况。在进行高浓度BPSG（硼元素的浓度在4至15%重量百分比之上，磷元素的浓度在4-15%重量百分比之上）之后，再进行如图1C所示的表面处理。此时的表面处理使用等离子3。
在本发明中，使用通过O3-四乙基原硅酸盐（O3-TEOS）形成的BPSG，沉积条件为：四乙基原硅酸盐：3SLM，三甲基硼酸：40mg，三甲基硼酸：1.5SLM，O3浓度：5%，O3+O2流体：7.5SLM，温度为420℃。
根据上述条件，在聚合硅图案上做成三块分别沉积有6000A的O3-四乙基原硅酸盐BPSG的样品。对一块进行N2O等离子处理，对另一块进行N2+NH3等离子处理，对剩下的一块根据常规方法（除了进行表面处理之外与图1中的实施例相同）制成样品后，将这三块样品在同样的条件下进行硫酸蒸煮，并在850℃的N2中进行30分钟的回流。
试验结果时，在高浓度BPSG沉积后进行N2O等离子体处理的样品完全不受硫酸蒸煮的侵蚀，回流特性也很好（如图3所示）。
另一方面，经N2+NH3等离子处理的样品在一定程度上受硫酸蒸煮的侵蚀，回流特性也不太好（见图4）。但是，按常规的方法形成的高浓度BPSG由于硫酸蒸煮的侵蚀而产生了大量的裂缝（见图5）。
在上面所提到的图3至图5中，图3A、4A及图5A为通过 SEM取得的表示图案的图3C、4C及5C的侧截面图，图3B、4B和5B为图3A、4A和5A的局部放大图。
本实施例中的等离子处理条件为温度200℃，RF（射频）功率为150W，对作为等离子气源的N2O和N2+NH3分别进行了5分钟的处理。将等离子条件改变，即使将等离子气源换成O3及O2等其他气体，也可以得到同样的特性。这样，通过对BPSG膜表面上存在的不稳定自由B2O3利用N2O或者O2等离子进行了处理，变成了稳定的B-O-Si构造，形成了新的SiOx膜。
在800℃的N2雾气下进行30分钟的回流条件下作光谱比较的话，可以看出：高浓度BPSG沉积之后进行表面处理后再进行硫酸蒸煮时，硼元素及磷元素的光谱与沉积状态自身相同，而不进行表面处理时的硼元素的光谱值比峰值显著减少。
于是，通过在BPSG沉积内进行表面处理，可以防止因从外部吸收水分而产生的侵蚀，防止硼元素向外扩散，即使在850℃以下，回流特性也非常优异。这样就解决了诸如伴随着高温处理的热冲击造成结合破坏这样的问题。
综上所述，在现有技术中，因硼元素浓度增加造成的硫酸蒸素及来自外部的侵蚀非常显著，因而必须对硼元素及磷元素的浓度增加加以限制。但根据发明，可以减轻高浓度BPSG的侵蚀，使BPSG的熔点降低，从而能实现高浓度化的低温回流。

Claims (7)

1、半导体装置的层间绝缘膜的形成方法，其特征在于下列步骤：
在形成元件的半导体基板上沉积含有高浓度硼元素及磷元素的绝缘膜，
在上面的沉积绝缘膜的表面使用等离子体进行表面处理，以及
在等离子表面处理后再在低温下进行回流处理。
2、如权利要求1所述的导体装置的层间绝缘膜的形成方法，其特征在于上述的硼元素浓度为4-15%重量百分比。
3、如权利要求1中所述的半导体装置的层间绝缘膜的形成方法，其特征在于上述磷元素浓度为4-15%重量百分比。
4、如权利要求1中所述的半导体装置的层间绝缘膜的形成方法，其特征在于：将N2，O2及O3等含有氧元素的气体中的一种用作上述表面处理中使用的等离子气源。
5、如权利要求1中所述的半导体装置的层间绝缘层的形成方法，其特征在于：上述的绝缘膜由SiO2，Al2O3，SiNx中的任意一种构成。
6、如权利要求1所述的半导体装置的层间绝缘膜的形成方法，其特征在于上述回流工艺的温度为850℃以下。
7、如权利要求1所述的半导体装置的层间绝缘膜的形成方法，其特征在于：在上述低温回流工艺之前通过湿式洗净方式来清洗绝缘层的表面。
CN92112536A 1991-10-30 1992-10-29 半导体装置的层间绝缘膜的形成方法 Expired - Lifetime CN1028817C (zh)

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