CN102844151A - 同时双面晶片研磨机中的流体静力垫压力调控 - Google Patents

同时双面晶片研磨机中的流体静力垫压力调控 Download PDF

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Publication number
CN102844151A
CN102844151A CN201180016139XA CN201180016139A CN102844151A CN 102844151 A CN102844151 A CN 102844151A CN 201180016139X A CN201180016139X A CN 201180016139XA CN 201180016139 A CN201180016139 A CN 201180016139A CN 102844151 A CN102844151 A CN 102844151A
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CN
China
Prior art keywords
wafer
hydrostatic
grinding
grinder
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201180016139XA
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English (en)
Chinese (zh)
Inventor
S·S·巴加瓦特
R·R·旺达姆
T·科穆拉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
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SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of CN102844151A publication Critical patent/CN102844151A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
    • B24B7/17—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/08—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass
    • B24B9/14—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass of optical work, e.g. lenses, prisms
    • B24B9/148—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass of optical work, e.g. lenses, prisms electrically, e.g. numerically, controlled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
CN201180016139XA 2010-03-26 2011-03-18 同时双面晶片研磨机中的流体静力垫压力调控 Pending CN102844151A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US31791910P 2010-03-26 2010-03-26
US61/317,919 2010-03-26
PCT/IB2011/051152 WO2011117792A1 (en) 2010-03-26 2011-03-18 Hydrostatic pad pressure modulation in a simultaneous double side wafer grinder

Publications (1)

Publication Number Publication Date
CN102844151A true CN102844151A (zh) 2012-12-26

Family

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CN201180016139XA Pending CN102844151A (zh) 2010-03-26 2011-03-18 同时双面晶片研磨机中的流体静力垫压力调控

Country Status (8)

Country Link
US (1) US8712575B2 (cg-RX-API-DMAC7.html)
EP (1) EP2552644A4 (cg-RX-API-DMAC7.html)
JP (1) JP6013317B2 (cg-RX-API-DMAC7.html)
KR (1) KR101694574B1 (cg-RX-API-DMAC7.html)
CN (1) CN102844151A (cg-RX-API-DMAC7.html)
SG (1) SG184014A1 (cg-RX-API-DMAC7.html)
TW (1) TWI520202B (cg-RX-API-DMAC7.html)
WO (1) WO2011117792A1 (cg-RX-API-DMAC7.html)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105881195A (zh) * 2015-02-17 2016-08-24 光洋机械工业株式会社 双头平面研磨装置
CN105881213A (zh) * 2014-09-01 2016-08-24 曾庆明 一种精密双面研磨机的控制器
CN108127560A (zh) * 2017-12-08 2018-06-08 中国兵器科学研究院宁波分院 用于方形光学元件双面快速抛光的控制系统
CN108475627A (zh) * 2015-11-26 2018-08-31 胜高股份有限公司 晶圆抛光方法
CN112930248A (zh) * 2019-04-01 2021-06-08 株式会社村田制作所 研磨剂供给装置、研磨装置以及研磨剂供给方法
CN113396030A (zh) * 2018-12-27 2021-09-14 胜高股份有限公司 两头磨削方法
CN114227524A (zh) * 2021-12-30 2022-03-25 西安奕斯伟材料科技有限公司 双面研磨装置和双面研磨方法
CN115070604A (zh) * 2022-06-09 2022-09-20 西安奕斯伟材料科技有限公司 双面研磨装置和双面研磨方法
CN115723035A (zh) * 2022-09-08 2023-03-03 西安奕斯伟材料科技有限公司 用于监控研磨装置的加工状态的系统、方法及双面研磨装置
CN120038618A (zh) * 2025-04-18 2025-05-27 浙江求是半导体设备有限公司 一种晶圆双面减薄方法和系统

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9960088B2 (en) * 2011-11-07 2018-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. End point detection in grinding
US9358660B2 (en) 2011-11-07 2016-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Grinding wheel design with elongated teeth arrangement
JP6197580B2 (ja) * 2013-10-29 2017-09-20 株式会社Sumco キャリアプレート及びワークの両面研磨装置
JP6513174B2 (ja) * 2017-12-25 2019-05-15 信越半導体株式会社 ウェーハ保持用キャリアの設計方法
US11415971B2 (en) 2020-02-10 2022-08-16 Globalwafers Co., Ltd. Systems and methods for enhanced wafer manufacturing
WO2022103738A1 (en) * 2020-11-10 2022-05-19 Globalwafers Co., Ltd. Systems and methods for enhanced machine learning using hierarchical prediction and compound thresholds
US12386340B2 (en) 2022-02-25 2025-08-12 Globalwafers Co., Ltd. Systems and methods for generating post-polishing topography for enhanced wafer manufacturing
CN115383616B (zh) * 2022-09-22 2024-05-31 西安奕斯伟材料科技股份有限公司 研磨装置、研磨方法及硅片
US12496676B2 (en) 2023-01-26 2025-12-16 Globalwafers Co., Ltd. Methods of processing semiconductor wafers using double side grinding operations
CN116475934B (zh) * 2023-03-31 2025-03-28 西安奕斯伟材料科技股份有限公司 静压垫、研磨设备及硅片

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050260922A1 (en) * 2004-05-21 2005-11-24 Mosel Vitelic, Inc. Torque-based end point detection methods for chemical mechanical polishing tool which uses ceria-based CMP slurry to polish to protective pad layer
US20060009125A1 (en) * 2002-10-09 2006-01-12 Kenji Okura Both side grinding method and both side grinder of thin disc-like work
CN1933940A (zh) * 2004-03-19 2007-03-21 Memc电子材料有限公司 用于双面研磨机的晶片夹持装置
JP2007096015A (ja) * 2005-09-29 2007-04-12 Shin Etsu Handotai Co Ltd 半導体ウェーハの両頭研削装置、静圧パッドおよびこれを用いた両頭研削方法
US20070179660A1 (en) * 2006-01-30 2007-08-02 Memc Electronic Materials, Inc. Double side wafer grinder and methods for assessing workpiece nanotopology

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1177497A (ja) * 1997-09-01 1999-03-23 Waida Seisakusho:Kk 半導体ウエハの両面研削方法及び両面研削装置
JPH11154655A (ja) * 1997-11-21 1999-06-08 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法
JP3328193B2 (ja) * 1998-07-08 2002-09-24 信越半導体株式会社 半導体ウエーハの製造方法
JP3664593B2 (ja) * 1998-11-06 2005-06-29 信越半導体株式会社 半導体ウエーハおよびその製造方法
US6652358B1 (en) * 1999-05-07 2003-11-25 Shin-Etsu Handotai Co., Ltd. Double-sided simultaneous grinding method, double-sided simultaneous grinding machine, double-sided simultaneous lapping method, and double-sided simultaneous lapping machine
US6294469B1 (en) * 1999-05-21 2001-09-25 Plasmasil, Llc Silicon wafering process flow
JP2002307303A (ja) * 2001-04-10 2002-10-23 Koyo Mach Ind Co Ltd 薄板円板状ワークの両面研削方法および装置
JP2002307275A (ja) * 2001-04-16 2002-10-23 Sumitomo Heavy Ind Ltd 加工システム及び面取り装置
JP2002346924A (ja) * 2001-05-29 2002-12-04 Sumitomo Heavy Ind Ltd ワークホルダ
JP3848120B2 (ja) * 2001-10-12 2006-11-22 住友重機械工業株式会社 ワーク研削装置
JP2004072076A (ja) * 2002-06-10 2004-03-04 Nikon Corp 露光装置及びステージ装置、並びにデバイス製造方法
JP3993856B2 (ja) * 2004-01-22 2007-10-17 光洋機械工業株式会社 両頭平面研削装置
JP4326974B2 (ja) * 2004-01-30 2009-09-09 コマツＮｔｃ株式会社 ウェーハの研削装置及び研削方法
DE102004005702A1 (de) * 2004-02-05 2005-09-01 Siltronic Ag Halbleiterscheibe, Vorrichtung und Verfahren zur Herstellung der Halbleiterscheibe
JP4615275B2 (ja) * 2004-09-21 2011-01-19 株式会社ディスコ ウェーハ研磨装置及びウェーハの研磨方法
JP4752475B2 (ja) * 2005-12-08 2011-08-17 信越半導体株式会社 半導体ウェーハの両頭研削装置、静圧パッドおよびこれを用いた両頭研削方法
US7930058B2 (en) * 2006-01-30 2011-04-19 Memc Electronic Materials, Inc. Nanotopography control and optimization using feedback from warp data
MY149762A (en) * 2006-01-30 2013-10-14 Memc Electronic Materials Double side wafer grinder and methods for assessing workpiece nanotopology
US7662023B2 (en) * 2006-01-30 2010-02-16 Memc Electronic Materials, Inc. Double side wafer grinder and methods for assessing workpiece nanotopology
EP1870936A1 (fr) * 2006-06-19 2007-12-26 STMicroelectronics (Rousset) SAS Procédé de fabrication de lentilles, notamment pour imageur intégré
WO2008010499A1 (en) * 2006-07-18 2008-01-24 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, method for producing the same, and chemical mechanical polishing method
DE102007030958B4 (de) * 2007-07-04 2014-09-11 Siltronic Ag Verfahren zum Schleifen von Halbleiterscheiben
US7989319B2 (en) * 2007-08-07 2011-08-02 Semiconductor Components Industries, Llc Semiconductor die singulation method
US8012857B2 (en) * 2007-08-07 2011-09-06 Semiconductor Components Industries, Llc Semiconductor die singulation method
US8859396B2 (en) * 2007-08-07 2014-10-14 Semiconductor Components Industries, Llc Semiconductor die singulation method
JP5245319B2 (ja) * 2007-08-09 2013-07-24 富士通株式会社 研磨装置及び研磨方法、基板及び電子機器の製造方法
DE102007049811B4 (de) * 2007-10-17 2016-07-28 Peter Wolters Gmbh Läuferscheibe, Verfahren zur Beschichtung einer Läuferscheibe sowie Verfahren zur gleichzeitigen beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben
JP4985451B2 (ja) * 2008-02-14 2012-07-25 信越半導体株式会社 ワークの両頭研削装置およびワークの両頭研削方法
JP5390807B2 (ja) * 2008-08-21 2014-01-15 株式会社荏原製作所 研磨方法および装置
JP2010064214A (ja) * 2008-09-12 2010-03-25 Koyo Mach Ind Co Ltd 両頭平面研削盤及びワークの両面研削方法
JP4291405B1 (ja) * 2008-11-14 2009-07-08 健治 吉田 ドットパターン読み取り機能を備えたマウス
DE102009048436B4 (de) * 2009-10-07 2012-12-20 Siltronic Ag Verfahren zum Schleifen einer Halbleiterscheibe

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060009125A1 (en) * 2002-10-09 2006-01-12 Kenji Okura Both side grinding method and both side grinder of thin disc-like work
CN1933940A (zh) * 2004-03-19 2007-03-21 Memc电子材料有限公司 用于双面研磨机的晶片夹持装置
US20050260922A1 (en) * 2004-05-21 2005-11-24 Mosel Vitelic, Inc. Torque-based end point detection methods for chemical mechanical polishing tool which uses ceria-based CMP slurry to polish to protective pad layer
JP2007096015A (ja) * 2005-09-29 2007-04-12 Shin Etsu Handotai Co Ltd 半導体ウェーハの両頭研削装置、静圧パッドおよびこれを用いた両頭研削方法
US20070179660A1 (en) * 2006-01-30 2007-08-02 Memc Electronic Materials, Inc. Double side wafer grinder and methods for assessing workpiece nanotopology

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105881213A (zh) * 2014-09-01 2016-08-24 曾庆明 一种精密双面研磨机的控制器
CN105881195A (zh) * 2015-02-17 2016-08-24 光洋机械工业株式会社 双头平面研磨装置
CN108475627B (zh) * 2015-11-26 2022-11-08 胜高股份有限公司 晶圆抛光方法
CN108475627A (zh) * 2015-11-26 2018-08-31 胜高股份有限公司 晶圆抛光方法
CN108127560A (zh) * 2017-12-08 2018-06-08 中国兵器科学研究院宁波分院 用于方形光学元件双面快速抛光的控制系统
CN113396030A (zh) * 2018-12-27 2021-09-14 胜高股份有限公司 两头磨削方法
CN112930248A (zh) * 2019-04-01 2021-06-08 株式会社村田制作所 研磨剂供给装置、研磨装置以及研磨剂供给方法
CN112930248B (zh) * 2019-04-01 2023-05-02 株式会社村田制作所 研磨剂供给装置、研磨装置以及研磨剂供给方法
CN114227524A (zh) * 2021-12-30 2022-03-25 西安奕斯伟材料科技有限公司 双面研磨装置和双面研磨方法
CN115070604A (zh) * 2022-06-09 2022-09-20 西安奕斯伟材料科技有限公司 双面研磨装置和双面研磨方法
CN115070604B (zh) * 2022-06-09 2023-09-29 西安奕斯伟材料科技股份有限公司 双面研磨装置和双面研磨方法
CN115723035A (zh) * 2022-09-08 2023-03-03 西安奕斯伟材料科技有限公司 用于监控研磨装置的加工状态的系统、方法及双面研磨装置
CN115723035B (zh) * 2022-09-08 2024-05-28 西安奕斯伟材料科技股份有限公司 用于监控研磨装置的加工状态的系统、方法及双面研磨装置
CN120038618A (zh) * 2025-04-18 2025-05-27 浙江求是半导体设备有限公司 一种晶圆双面减薄方法和系统
CN120038618B (zh) * 2025-04-18 2025-07-29 浙江求是半导体设备有限公司 一种晶圆双面减薄方法和系统

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TW201201264A (en) 2012-01-01
US20110237160A1 (en) 2011-09-29
KR101694574B1 (ko) 2017-01-09
EP2552644A4 (en) 2014-05-14
US8712575B2 (en) 2014-04-29
WO2011117792A1 (en) 2011-09-29
TWI520202B (zh) 2016-02-01
KR20130008572A (ko) 2013-01-22
JP2013524484A (ja) 2013-06-17
JP6013317B2 (ja) 2016-10-25
EP2552644A1 (en) 2013-02-06
SG184014A1 (en) 2012-10-30

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Application publication date: 20121226