CN102823007B - 压电薄膜器件及其制造方法以及压电薄膜装置 - Google Patents

压电薄膜器件及其制造方法以及压电薄膜装置 Download PDF

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Publication number
CN102823007B
CN102823007B CN201080065779.5A CN201080065779A CN102823007B CN 102823007 B CN102823007 B CN 102823007B CN 201080065779 A CN201080065779 A CN 201080065779A CN 102823007 B CN102823007 B CN 102823007B
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China
Prior art keywords
piezoelectric
orientation
piezoelectric membrane
film
thin film
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English (en)
Chinese (zh)
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CN102823007A (zh
Inventor
末永和史
柴田宪治
佐藤秀树
野本明
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Sumitomo Chemical Co Ltd
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Hitachi Metals Ltd
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Priority claimed from JP2010075161A external-priority patent/JP5035378B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02094—Means for compensation or elimination of undesirable effects of adherence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
CN201080065779.5A 2010-03-29 2010-12-21 压电薄膜器件及其制造方法以及压电薄膜装置 Active CN102823007B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010-075161 2010-03-29
JP2010075161A JP5035378B2 (ja) 2009-06-22 2010-03-29 圧電薄膜素子及びその製造方法、並びに圧電薄膜デバイス
PCT/JP2010/073006 WO2011121863A1 (fr) 2010-03-29 2010-12-21 Élément à couche mince piézoélectrique, procédé de production de celui-ci et dispositif à couche mince piézoélectrique

Publications (2)

Publication Number Publication Date
CN102823007A CN102823007A (zh) 2012-12-12
CN102823007B true CN102823007B (zh) 2014-04-09

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CN201080065779.5A Active CN102823007B (zh) 2010-03-29 2010-12-21 压电薄膜器件及其制造方法以及压电薄膜装置

Country Status (3)

Country Link
CN (1) CN102823007B (fr)
DE (1) DE112010005432B9 (fr)
WO (1) WO2011121863A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6057049B2 (ja) * 2012-03-22 2017-01-11 セイコーエプソン株式会社 圧電素子、液体噴射ヘッド、液体噴射装置、超音波デバイス及びセンサー
JP6578866B2 (ja) 2015-10-02 2019-09-25 Tdk株式会社 圧電薄膜、圧電薄膜素子、圧電アクチュエータ、圧電センサ、並びにハードディスクドライブ、及びインクジェットプリンタヘッド
JP2017179415A (ja) * 2016-03-29 2017-10-05 Tdk株式会社 圧電磁器スパッタリングターゲット、非鉛圧電薄膜およびそれを用いた圧電薄膜素子
JP6874351B2 (ja) * 2016-12-07 2021-05-19 Tdk株式会社 圧電薄膜積層体、圧電薄膜基板、圧電薄膜素子、圧電アクチュエータ、圧電センサ、ヘッドアセンブリ、ヘッドスタックアセンブリ、ハードディスクドライブ、プリンタヘッド、及びインクジェットプリンタ装置
JP2019021994A (ja) * 2017-07-12 2019-02-07 株式会社サイオクス 圧電膜を有する積層基板、圧電膜を有する素子および圧電膜を有する積層基板の製造方法
CN110832655B (zh) * 2017-09-22 2023-07-28 Tdk株式会社 压电薄膜元件
US20220059753A1 (en) * 2018-09-12 2022-02-24 Tdk Corporation Dielectric thin film, dielectric thin film element, piezoelectric actuator, piezoelectric sensor, head assembly, head stack assembly, hard disk drive, printer head and inkjet printer device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3666177B2 (ja) 1997-04-14 2005-06-29 松下電器産業株式会社 インクジェット記録装置
US6969157B2 (en) * 2002-05-31 2005-11-29 Matsushita Electric Industrial Co., Ltd. Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus
JP2007019302A (ja) 2005-07-08 2007-01-25 Hitachi Cable Ltd 圧電薄膜素子及びそれを用いたアクチュエータ並びにセンサ
JP5044902B2 (ja) * 2005-08-01 2012-10-10 日立電線株式会社 圧電薄膜素子
US20070046153A1 (en) * 2005-08-23 2007-03-01 Canon Kabushiki Kaisha Piezoelectric substrate, piezoelectric element, liquid discharge head and liquid discharge apparatus
JP4258530B2 (ja) * 2006-06-05 2009-04-30 日立電線株式会社 圧電薄膜素子
CN102214788A (zh) * 2007-03-30 2011-10-12 佳能株式会社 外延膜、压电元件、铁电元件、它们的制造方法以及液体排出头
JP5181538B2 (ja) * 2007-06-06 2013-04-10 日立電線株式会社 圧電体及び圧電素子
JP5267082B2 (ja) * 2008-01-24 2013-08-21 日立電線株式会社 圧電薄膜素子及びそれを用いたセンサ並びにアクチュエータ
JP5525143B2 (ja) * 2008-06-05 2014-06-18 日立金属株式会社 圧電薄膜素子及び圧電薄膜デバイス
JP5446146B2 (ja) * 2008-07-01 2014-03-19 日立金属株式会社 圧電薄膜素子、センサ及びアクチュエータ
JP2010075161A (ja) 2008-09-29 2010-04-08 Iseki & Co Ltd コンバイン
JP5035374B2 (ja) * 2009-06-10 2012-09-26 日立電線株式会社 圧電薄膜素子及びそれを備えた圧電薄膜デバイス

Also Published As

Publication number Publication date
DE112010005432B4 (de) 2016-11-10
WO2011121863A1 (fr) 2011-10-06
DE112010005432T5 (de) 2013-03-28
CN102823007A (zh) 2012-12-12
DE112010005432B9 (de) 2016-11-24

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Patentee after: Sumitomo Chemical Co., Ltd.

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