CN102820323B - 纳米碳化硅/晶体碳化硅双缓变结快速恢复二极管及其制备方法 - Google Patents
纳米碳化硅/晶体碳化硅双缓变结快速恢复二极管及其制备方法 Download PDFInfo
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CN104131265A (zh) * | 2014-07-22 | 2014-11-05 | 西安电子科技大学 | 一种控制掺杂源流量n型低掺杂碳化硅薄膜外延制备方法 |
CN104233461A (zh) * | 2014-07-22 | 2014-12-24 | 西安电子科技大学 | 一种控制氢气流量n型重掺杂碳化硅薄膜外延制备方法 |
CN104233465A (zh) * | 2014-07-22 | 2014-12-24 | 西安电子科技大学 | 一种控制生长压强n型重掺杂碳化硅薄膜外延制备方法 |
CN104201211B (zh) * | 2014-08-27 | 2016-03-30 | 温州大学 | 制备SiC超快恢复二极管及工艺 |
CN104701385B (zh) * | 2015-01-19 | 2016-03-30 | 温州大学 | 纳米晶嵌入单晶外延碳化硅的高稳定低损耗微波二极管 |
CN114649425B (zh) * | 2022-05-20 | 2022-08-26 | 正泰新能科技有限公司 | 一种TopCon晶硅太阳能电池及其制备方法 |
CN118497722A (zh) * | 2024-07-17 | 2024-08-16 | 成都晶柱科技有限公司 | Mpcvd金刚石培育过程中的高温电离控制系统 |
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US6737731B1 (en) * | 2000-06-26 | 2004-05-18 | Fairchild Semiconductor Corporation | Soft recovery power diode |
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US6737731B1 (en) * | 2000-06-26 | 2004-05-18 | Fairchild Semiconductor Corporation | Soft recovery power diode |
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(p)nc-Si:H/(n)c-Si异质结变容二极管;韦文生等;《半导体学报》;20050430;第26卷(第4期);第745-750页 * |
Keiko Fujihira et al..Low-Loss,High-Voltage 6H-SiC Epitaxial p-i-n Diode.《IEEE TRANSACTIONS ON ELECTRON DEVICES》.2002,第49卷(第1期),文章第5-7段以及附图1. * |
韦文生等.(p)nc-Si:H/(n)c-Si异质结变容二极管.《半导体学报》.2005,第26卷(第4期),文章第2-3段,表1以及附图1. * |
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