CN102804439B - 可交联的电介质及其制备方法和用途 - Google Patents

可交联的电介质及其制备方法和用途 Download PDF

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Publication number
CN102804439B
CN102804439B CN201080032571.3A CN201080032571A CN102804439B CN 102804439 B CN102804439 B CN 102804439B CN 201080032571 A CN201080032571 A CN 201080032571A CN 102804439 B CN102804439 B CN 102804439B
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CN
China
Prior art keywords
electronic device
compound
dielectric
alkyl
gate
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201080032571.3A
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English (en)
Chinese (zh)
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CN102804439A (zh
Inventor
M·卡斯特勒
S·A·克勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Feilisi Co Ltd
BASF SE
Original Assignee
POLYERA CORP
BASF SE
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Publication of CN102804439A publication Critical patent/CN102804439A/zh
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Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Organic Insulating Materials (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
CN201080032571.3A 2009-05-25 2010-05-20 可交联的电介质及其制备方法和用途 Expired - Fee Related CN102804439B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09160980.0 2009-05-25
EP09160980 2009-05-25
PCT/EP2010/056983 WO2010136385A1 (en) 2009-05-25 2010-05-20 Crosslinkable dielectrics and methods of preparation and use thereof

Publications (2)

Publication Number Publication Date
CN102804439A CN102804439A (zh) 2012-11-28
CN102804439B true CN102804439B (zh) 2015-05-27

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Family Applications (1)

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CN201080032571.3A Expired - Fee Related CN102804439B (zh) 2009-05-25 2010-05-20 可交联的电介质及其制备方法和用途

Country Status (7)

Country Link
US (1) US8853820B2 (https=)
EP (1) EP2436056B1 (https=)
JP (1) JP5886189B2 (https=)
KR (1) KR101702484B1 (https=)
CN (1) CN102804439B (https=)
TW (1) TWI527834B (https=)
WO (1) WO2010136385A1 (https=)

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TWI764929B (zh) * 2016-09-27 2022-05-21 德商巴地斯顏料化工廠 具有經增強的可交聯性之星形及三嵌段聚合物
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KR102458414B1 (ko) * 2021-01-26 2022-10-25 한국화학연구원 절연성 수지 조성물, 이로부터 제조된 절연체 및 이를 포함하는 유기박막트랜지스터
CN113410384B (zh) * 2021-06-28 2023-04-07 西南大学 一种用于柔性场效应晶体管的聚合物介电层的制备方法
US20250250394A1 (en) * 2021-08-30 2025-08-07 Flexterra, Inc. Dielectric polymer materials with coloration and devices using them
CN113943436B (zh) * 2021-09-29 2023-06-02 郑州大学 一种可简便图案化的耐溶剂高介电常数绝缘层的制备方法

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Also Published As

Publication number Publication date
TW201105689A (en) 2011-02-16
US20120068314A1 (en) 2012-03-22
JP5886189B2 (ja) 2016-03-16
US8853820B2 (en) 2014-10-07
EP2436056B1 (en) 2016-08-03
TWI527834B (zh) 2016-04-01
CN102804439A (zh) 2012-11-28
KR101702484B1 (ko) 2017-02-06
WO2010136385A1 (en) 2010-12-02
KR20120059457A (ko) 2012-06-08
EP2436056A1 (en) 2012-04-04
JP2012528476A (ja) 2012-11-12

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GR01 Patent grant
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Effective date of registration: 20170619

Address after: Ludwigshafen, Germany

Co-patentee after: Feilisi Co. Ltd.

Patentee after: BASF SE

Address before: Ludwigshafen, Germany

Co-patentee before: Polyera Corp.

Patentee before: BASF SE

TR01 Transfer of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150527

Termination date: 20190520

CF01 Termination of patent right due to non-payment of annual fee