KR101702484B1 - 가교결합성 유전체 및 이의 제조 방법 및 용도 - Google Patents

가교결합성 유전체 및 이의 제조 방법 및 용도 Download PDF

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KR101702484B1
KR101702484B1 KR1020117030258A KR20117030258A KR101702484B1 KR 101702484 B1 KR101702484 B1 KR 101702484B1 KR 1020117030258 A KR1020117030258 A KR 1020117030258A KR 20117030258 A KR20117030258 A KR 20117030258A KR 101702484 B1 KR101702484 B1 KR 101702484B1
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electronic device
dielectric
compound
alkyl
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KR20120059457A (ko
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마르셀 카스틀러
질케 아니카 쾰러
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바스프 에스이
폴리에라 코퍼레이션
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Assigned to 플렉스테라, 인크. reassignment 플렉스테라, 인크. 권리지분의 전부이전등록 Assignors: 폴리에라 코퍼레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Organic Insulating Materials (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
KR1020117030258A 2009-05-25 2010-05-20 가교결합성 유전체 및 이의 제조 방법 및 용도 Expired - Fee Related KR101702484B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09160980.0 2009-05-25
EP09160980 2009-05-25
PCT/EP2010/056983 WO2010136385A1 (en) 2009-05-25 2010-05-20 Crosslinkable dielectrics and methods of preparation and use thereof

Publications (2)

Publication Number Publication Date
KR20120059457A KR20120059457A (ko) 2012-06-08
KR101702484B1 true KR101702484B1 (ko) 2017-02-06

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Country Status (7)

Country Link
US (1) US8853820B2 (https=)
EP (1) EP2436056B1 (https=)
JP (1) JP5886189B2 (https=)
KR (1) KR101702484B1 (https=)
CN (1) CN102804439B (https=)
TW (1) TWI527834B (https=)
WO (1) WO2010136385A1 (https=)

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KR20220107721A (ko) * 2021-01-26 2022-08-02 한국화학연구원 절연성 수지 조성물, 이로부터 제조된 절연체 및 이를 포함하는 유기박막트랜지스터

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US8901544B2 (en) 2011-12-06 2014-12-02 Corning Incorporated Organic thin film transistor with ion exchanged glass substrate
US9171961B2 (en) 2012-07-11 2015-10-27 Polyera Corporation Coating materials for oxide thin film transistors
US10115903B2 (en) * 2012-12-18 2018-10-30 Merck Patent Gmbh Emitter having a condensed ring system
US9035287B2 (en) * 2013-02-01 2015-05-19 Polyera Corporation Polymeric materials for use in metal-oxide-semiconductor field-effect transistors
KR20160103083A (ko) 2013-12-24 2016-08-31 폴리에라 코퍼레이션 탈부착형 2차원 플렉서블 전자 기기용 지지 구조물
US10261634B2 (en) 2014-03-27 2019-04-16 Flexterra, Inc. Infrared touch system for flexible displays
WO2015183567A1 (en) 2014-05-28 2015-12-03 Polyera Corporation Low power display updates
DE102014215108A1 (de) * 2014-07-31 2016-02-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Elektronisches Bauteil, Verwendung eines Polymerisats sowie Polymerisat
EP3070741B1 (en) * 2015-03-18 2020-07-29 Emberion Oy An apparatus comprising a sensor arrangemenet and associated fabrication method
US10254795B2 (en) 2015-05-06 2019-04-09 Flexterra, Inc. Attachable, flexible display device with flexible tail
DE102015119939A1 (de) 2015-11-18 2017-05-18 ALTANA Aktiengesellschaft Vernetzbare polymere Materialien für dielektrische Schichten in elektronischen Bauteilen
TWI764929B (zh) * 2016-09-27 2022-05-21 德商巴地斯顏料化工廠 具有經增強的可交聯性之星形及三嵌段聚合物
EP3762979A1 (en) * 2018-03-07 2021-01-13 Clap Co., Ltd. Patterning method for preparing top-gate, bottom-contact organic field effect transistors
US20200066457A1 (en) * 2018-08-24 2020-02-27 Apple Inc. Self-fused capacitor
CN109216549A (zh) * 2018-09-14 2019-01-15 宁波石墨烯创新中心有限公司 一种有机薄膜晶体管及其制备方法
CN113410384B (zh) * 2021-06-28 2023-04-07 西南大学 一种用于柔性场效应晶体管的聚合物介电层的制备方法
US20250250394A1 (en) * 2021-08-30 2025-08-07 Flexterra, Inc. Dielectric polymer materials with coloration and devices using them
CN113943436B (zh) * 2021-09-29 2023-06-02 郑州大学 一种可简便图案化的耐溶剂高介电常数绝缘层的制备方法

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
KR20220107721A (ko) * 2021-01-26 2022-08-02 한국화학연구원 절연성 수지 조성물, 이로부터 제조된 절연체 및 이를 포함하는 유기박막트랜지스터
KR102458414B1 (ko) 2021-01-26 2022-10-25 한국화학연구원 절연성 수지 조성물, 이로부터 제조된 절연체 및 이를 포함하는 유기박막트랜지스터

Also Published As

Publication number Publication date
TW201105689A (en) 2011-02-16
US20120068314A1 (en) 2012-03-22
JP5886189B2 (ja) 2016-03-16
US8853820B2 (en) 2014-10-07
CN102804439B (zh) 2015-05-27
EP2436056B1 (en) 2016-08-03
TWI527834B (zh) 2016-04-01
CN102804439A (zh) 2012-11-28
WO2010136385A1 (en) 2010-12-02
KR20120059457A (ko) 2012-06-08
EP2436056A1 (en) 2012-04-04
JP2012528476A (ja) 2012-11-12

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