TWI527834B - 可交聯介電質及其製備方法與用途 - Google Patents

可交聯介電質及其製備方法與用途 Download PDF

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Publication number
TWI527834B
TWI527834B TW099116713A TW99116713A TWI527834B TW I527834 B TWI527834 B TW I527834B TW 099116713 A TW099116713 A TW 099116713A TW 99116713 A TW99116713 A TW 99116713A TW I527834 B TWI527834 B TW I527834B
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TW
Taiwan
Prior art keywords
group
electronic device
dielectric
alkyl
compound
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TW099116713A
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English (en)
Chinese (zh)
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TW201105689A (en
Inventor
馬可 凱斯特勒
席克 阿尼卡 庫勤
Original Assignee
巴地斯顏料化工廠
保利艾拉公司
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Application filed by 巴地斯顏料化工廠, 保利艾拉公司 filed Critical 巴地斯顏料化工廠
Publication of TW201105689A publication Critical patent/TW201105689A/zh
Application granted granted Critical
Publication of TWI527834B publication Critical patent/TWI527834B/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
    • H01G4/14Organic dielectrics
    • H01G4/18Organic dielectrics of synthetic material, e.g. derivatives of cellulose
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/33Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/151Copolymers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69Insulating materials thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10Transparent electrodes, e.g. using graphene
    • H10K2102/101Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Organic Insulating Materials (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
TW099116713A 2009-05-25 2010-05-25 可交聯介電質及其製備方法與用途 TWI527834B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP09160980 2009-05-25

Publications (2)

Publication Number Publication Date
TW201105689A TW201105689A (en) 2011-02-16
TWI527834B true TWI527834B (zh) 2016-04-01

Family

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Family Applications (1)

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TW099116713A TWI527834B (zh) 2009-05-25 2010-05-25 可交聯介電質及其製備方法與用途

Country Status (7)

Country Link
US (1) US8853820B2 (https=)
EP (1) EP2436056B1 (https=)
JP (1) JP5886189B2 (https=)
KR (1) KR101702484B1 (https=)
CN (1) CN102804439B (https=)
TW (1) TWI527834B (https=)
WO (1) WO2010136385A1 (https=)

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Also Published As

Publication number Publication date
TW201105689A (en) 2011-02-16
US20120068314A1 (en) 2012-03-22
JP5886189B2 (ja) 2016-03-16
US8853820B2 (en) 2014-10-07
CN102804439B (zh) 2015-05-27
EP2436056B1 (en) 2016-08-03
CN102804439A (zh) 2012-11-28
KR101702484B1 (ko) 2017-02-06
WO2010136385A1 (en) 2010-12-02
KR20120059457A (ko) 2012-06-08
EP2436056A1 (en) 2012-04-04
JP2012528476A (ja) 2012-11-12

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