CN102779473B - 显示器件 - Google Patents
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- CN102779473B CN102779473B CN201210221938.7A CN201210221938A CN102779473B CN 102779473 B CN102779473 B CN 102779473B CN 201210221938 A CN201210221938 A CN 201210221938A CN 102779473 B CN102779473 B CN 102779473B
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- transistor
- gate
- electrode
- terminal
- capacitor
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Classifications
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- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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- G09G3/325—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element the current through the light-emitting element being set using a data current provided by the data driver, e.g. by using a two-transistor current mirror the data current flowing through the driving transistor during a setting phase, e.g. by using a switch for connecting the driving transistor to the data driver
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0852—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor being a dynamic memory with more than one capacitor
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- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
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- G09G2310/0272—Details of drivers for data electrodes, the drivers communicating data to the pixels by means of a current
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
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- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of El Displays (AREA)
Applications Claiming Priority (3)
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| JP2005269323 | 2005-09-16 | ||
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| CN2006101534980A CN1932943B (zh) | 2005-09-16 | 2006-09-15 | 显示器件及其驱动方法 |
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| CN102779473A CN102779473A (zh) | 2012-11-14 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2004361424A (ja) * | 2003-03-19 | 2004-12-24 | Semiconductor Energy Lab Co Ltd | 素子基板、発光装置及び発光装置の駆動方法 |
| JP4882536B2 (ja) * | 2006-06-19 | 2012-02-22 | セイコーエプソン株式会社 | 電子回路及び電子機器 |
| TWI442368B (zh) | 2006-10-26 | 2014-06-21 | Semiconductor Energy Lab | 電子裝置,顯示裝置,和半導體裝置,以及其驅動方法 |
| JP5266645B2 (ja) * | 2007-01-31 | 2013-08-21 | 三菱電機株式会社 | 薄膜トランジスタと該薄膜トランジスタを用いた表示装置 |
| KR101526475B1 (ko) * | 2007-06-29 | 2015-06-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 구동 방법 |
| US7738050B2 (en) * | 2007-07-06 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd | Liquid crystal display device |
| TWI575293B (zh) * | 2007-07-20 | 2017-03-21 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
| US9570004B1 (en) * | 2008-03-16 | 2017-02-14 | Nongqiang Fan | Method of driving pixel element in active matrix display |
| JP5616038B2 (ja) | 2008-07-31 | 2014-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5933160B2 (ja) * | 2008-12-04 | 2016-06-08 | 株式会社半導体エネルギー研究所 | 表示装置、電子機器及び移動体 |
| WO2011002046A1 (en) | 2009-06-30 | 2011-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR101944656B1 (ko) | 2009-06-30 | 2019-04-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제조 방법 |
| US8766269B2 (en) * | 2009-07-02 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, lighting device, and electronic device |
| KR101739154B1 (ko) * | 2009-07-17 | 2017-05-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| TWI746064B (zh) * | 2009-08-07 | 2021-11-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| WO2011027701A1 (en) * | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
| KR20220153647A (ko) * | 2009-10-29 | 2022-11-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011059886A2 (en) * | 2009-11-16 | 2011-05-19 | Unipixel Displays, Inc. | Address-selectable charging of capacitive devices |
| US8659015B2 (en) * | 2011-03-04 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5982147B2 (ja) | 2011-04-01 | 2016-08-31 | 株式会社半導体エネルギー研究所 | 発光装置 |
| KR101834012B1 (ko) | 2011-04-13 | 2018-03-02 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치 |
| US8854867B2 (en) * | 2011-04-13 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and driving method of the memory device |
| US8922464B2 (en) | 2011-05-11 | 2014-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device and driving method thereof |
| JP6018409B2 (ja) | 2011-05-13 | 2016-11-02 | 株式会社半導体エネルギー研究所 | 発光装置 |
| KR101813192B1 (ko) * | 2011-05-31 | 2017-12-29 | 삼성디스플레이 주식회사 | 화소 및 이를 포함하는 표시장치, 및 그 구동방법 |
| KR101960971B1 (ko) * | 2011-08-05 | 2019-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| US8710505B2 (en) | 2011-08-05 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| GB201114651D0 (en) * | 2011-08-24 | 2011-10-12 | Cambridge Display Tech Ltd | Pixel driver circuits |
| JP6050054B2 (ja) | 2011-09-09 | 2016-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8736315B2 (en) | 2011-09-30 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US12176356B2 (en) | 2011-10-18 | 2024-12-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor and light-emitting element |
| KR20230098374A (ko) * | 2011-10-18 | 2023-07-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
| US10043794B2 (en) | 2012-03-22 | 2018-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
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- 2006-09-15 KR KR1020060089837A patent/KR101269934B1/ko not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| JP4753373B2 (ja) | 2011-08-24 |
| US7995009B2 (en) | 2011-08-09 |
| CN102779473A (zh) | 2012-11-14 |
| CN1932943B (zh) | 2012-08-22 |
| JP2007108689A (ja) | 2007-04-26 |
| US8749453B2 (en) | 2014-06-10 |
| US20110227067A1 (en) | 2011-09-22 |
| US20070064469A1 (en) | 2007-03-22 |
| US9972647B2 (en) | 2018-05-15 |
| KR20070032252A (ko) | 2007-03-21 |
| CN1932943A (zh) | 2007-03-21 |
| KR101269934B1 (ko) | 2013-05-31 |
| US20140299875A1 (en) | 2014-10-09 |
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