CN102760824A - 发光二极管封装结构 - Google Patents

发光二极管封装结构 Download PDF

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CN102760824A
CN102760824A CN201110110696XA CN201110110696A CN102760824A CN 102760824 A CN102760824 A CN 102760824A CN 201110110696X A CN201110110696X A CN 201110110696XA CN 201110110696 A CN201110110696 A CN 201110110696A CN 102760824 A CN102760824 A CN 102760824A
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electrode
package structure
emitting diode
led
light
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CN102760824B (zh
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林新强
张洁玲
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

本发明涉及一种发光二极管封装结构，其包括基板、电极、反射杯、发光二极管芯片和封装层，所述基板包括第一表面、相对的第二表面，所述电极至少为两个，所述电极形成在所述基板上，所述发光二极管芯片与所述电极电性连接，所述反射杯位于所述基板的第一表面，每一电极设有凹槽，所述封装层覆盖所述发光二极管芯片，并填满所述电极的凹槽。由于本发明发光二极管封装结构的封装层向下延伸填满电极的凹槽，有利于提高封装层与电极之间的密合度，以及增加外界的水汽进入该发光二极管芯片的路径距离，有效的保护发光二极管芯片免受水气等影响。

Description

发光二极管封装结构
技术领域
本发明涉及半导体结构，尤其涉及一种发光二极管封装结构。
背景技术
目前发光二极管(Light Emitting Diode, LED)封装结构通常包括一个反射杯结构，所述反射杯常设于基板的上方，发光二极管放置于反射杯中。这种发光二极管封装结构中基板与反射杯之间容易形成缝隙，水汽和灰尘容易沿该缝隙进入封装后的发光二极管封装结构中，从而影响该发光二极管封装结构的寿命，甚至造成发光二极管的失效。
发明内容
有鉴于此，有必要提供一种能够防止水气进入的发光二极管封装结构。
一种发光二极管封装结构，其包括基板、电极、反射杯、发光二极管芯片和封装层，所述基板包括第一表面、相对的第二表面，所述电极至少为两个，所述电极形成在所述基板上，所述发光二极管芯片与所述电极电性连接，所述反射杯位于所述基板的第一表面，每一电极设有凹槽，所述封装层覆盖所述发光二极管芯片，并填满所述电极的凹槽。
上述发光二极管封装结构中，由于封装层向下延伸填满电极的凹槽，有利于提高封装层与电极之间的密合度，以及增加外界的水汽进入该发光二极管芯片的路径距离，有效的保护发光二极管芯片免受水气等影响。
附图说明
图1是本发明第一实施方式提供的一种发光二极管封装结构剖视图。
图2是本图1中发光二极管封装结构的俯视图。
图3是本发明第二实施方式提供的一种发光二极管封装结构剖视图。
图4是本发明第三实施方式提供的一种发光二极管封装结构剖视图。
主要元件符号说明
发光二极管封装结构 100、200
基板 10、10a
第一表面 11
第二表面 12
电极 20、20a、20b
顶面 21
凹槽 22、22a、22b
电连接端 23
发光二极管芯片 30、30a
金属导线 31
反射杯 40、40a
封装层 50、50a、50b
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
以下将结合附图对本发明作进一步的详细说明。
请参阅图1及图2，本发明的第一实施方式提供一种发光二极管封装结构100，其包括基板10、电极20、发光二极管芯片30、反射杯40和封装层50。
该基板10呈板体状设置，具有上下相对的第一表面11及第二表面12。所述基板10为绝缘体，可选自聚甲基丙烯酸甲酯、石墨、硅、陶瓷、类钻、环氧树脂或硅烷氧树脂等。
电极20至少为两个，均形成在所述基板10上，并且电极20相互之间电绝缘。所述电极20所用的材料为导电性能较好的金属材料，如金、银、铜、铂、铝、镍、锡或镁中的一种或几种的合金。每一电极20呈矩形体设置。每一电极20的顶面21与基板10的第一表面11平齐，其底面嵌入在基板10内部。每一电极20的背向另一电极20的一端向外延伸超出基板10的侧面，以形成连接外部电源的电连接端23。每一电极20在顶面21上设有凹槽22。该凹槽22呈条状设置，二电极20的凹槽22共同围绕所述发光二极管芯片30。在本实施例中，二电极20的凹槽22组合大致围成椭圆环形。可以理解地，二电极20的凹槽22可以组合围成圆环形或者矩形。
发光二极管芯片30贴设于基板10的第一表面11上。更具体的，发光二极管芯片30贴设于一电极20的顶面21上。所述发光二极管芯片30通过金属导线31与所述电极20电性连接。可以理解的，该发光二极管芯片30也可以采用覆晶的方式固定于电极20上并与电极20电连接。
所述反射杯40环绕所述发光二极管芯片30并设置在基板10的第一表面11上。该反射杯40的内壁底缘置于所述二电极20的凹槽22的外侧或者与凹槽22的外缘平齐。在本实施中，该反射杯40的内壁底缘与凹槽22的外缘平齐，并覆盖二电极20顶面的凹槽22外侧部分。
封装层50形成于所述基板10上的反射杯40内，覆盖所述发光二极管芯片30和金属导线31。所述封装层50的材质可以为硅胶(silicone)、环氧树脂(epoxy resin)或二者的组合物。所述封装层50还可以包含荧光转换材料，该萤光转换材料可以为石榴石基荧光粉、硅酸盐基荧光粉、原硅酸盐基荧光粉、硫化物基荧光粉、硫代镓酸盐基荧光粉和氮化物基荧光粉。该封装层50填满二电极20顶面的凹槽22。由于二电极20的凹槽22围绕发光二极管芯片30，封装层50向下延伸填满电极20的凹槽22，有利于提高封装层50与电极20之间的密合度，以及增加外界的水汽进入该发光二极管芯片30的路径距离，有效的保护发光二极管芯片30免受水气等影响。
请参阅图3，为本发明的第二实施方式提供的发光二极管封装结构200。该发光二极管封装结构200包括基板10a、电极20a、发光二极管芯片30a、反射杯40a和封装层50a。与第一实施方式的发光二极管封装结构100不同之处在于，发光二极管封装结构200的每一电极20a的凹槽22a并非呈条状，而是自电极20a中部凹陷至靠近另外一电极20a的一端，即呈弧形切口状。二电极20a的凹槽22a组合大致围成椭圆形。由于凹槽22a的作用，每一电极20a设置封装层50a的区域部分的厚度小于该电极20a设置反射杯40a的区域部分的厚度。一发光二极管芯片30a贴设于一电极20a的凹槽22a的顶面上。该封装层50a覆盖所述发光二极管芯片30a并填满电极20a的凹槽22a。
请参阅图4，为本发明的第三实施方式提供的发光二极管封装结构300。与第一实施方式的发光二极管封装结构100不同之处在于，发光二极管封装结构300的每一电极20b的凹槽22b的底部朝外侧延伸从而使凹槽22b的横截面呈L型设置。封装层50a延伸填满凹槽22b以及增加外界的水汽进入该发光二极管芯片30的路径距离。可以理解地，凹槽22b还可以设置呈倒T型。
可以理解的是，对于本领域的普通技术人员来说，可以根据本发明的技术构思做出其它各种像应的改变与变形，而所有这些改变与变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种发光二极管封装结构，包括基板、电极、反射杯、发光二极管芯片和封装层，所述基板包括第一表面、相对的第二表面，所述电极至少为两个，所述电极形成在所述基板上，所述发光二极管芯片与所述电极电性连接，其特征在于：所述反射杯位于所述基板的第一表面，每一电极设有凹槽，所述封装层覆盖所述发光二极管芯片，并填满所述电极的凹槽。
2.如权利要求1所述的发光二极管封装结构，其特征在于：所述电极的顶面与所述基板的第一表面平齐，每一电极的凹槽自电极的顶面凹陷设置。
3.如权利要求1所述的发光二极管封装结构，其特征在于：所述电极的凹槽呈条形设置并围绕所述发光二极管芯片。
4.如权利要求3所述的发光二极管封装结构，其特征在于：所述电极的凹槽组合围成椭圆环形。
5.如权利要求3所述的发光二极管封装结构，其特征在于：所述电极的凹槽的外缘与该反射杯的内壁底缘对应平齐。
6.如权利要求1所述的发光二极管封装结构，其特征在于：所述电极设置封装层的区域部分的厚度小于该电极设置反射杯的区域部分的厚度。
7.如权利要求1所述的发光二极管封装结构，其特征在于：所述电极的凹槽的横截面呈L型或者倒T型设置。
8.如权利要求1所述的发光二极管封装结构，其特征在于：所述封装层内掺杂有荧光粉。
9.如权利要求8所述的发光二极管封装结构，其特征在于：所述荧光粉选自钇铝石榴石、铽钇铝石榴石、氮化物、硫化物及硅酸盐中的一种或几种的组合。
10.如权利要求1所述的发光二极管封装结构，其特征在于：所述反射杯环绕所述发光二极管芯片。
CN201110110696.XA 2011-04-29 2011-04-29 发光二极管封装结构 Expired - Fee Related CN102760824B (zh)

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TW100115709A TWI447971B (zh) 2011-04-29 2011-05-05 發光二極體封裝結構
US13/325,010 US9123870B2 (en) 2011-04-29 2011-12-13 LED package structure

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102683552A (zh) * 2012-05-04 2012-09-19 佛山市蓝箭电子有限公司 一种具有防水功能的表面贴装led及其支架
CN103835043A (zh) * 2014-03-20 2014-06-04 祝洪哲 天然麻纤维混纺的段彩纱线
WO2017059574A1 (zh) * 2015-10-09 2017-04-13 魏晓敏 Led发光单元及模组
CN114824040A (zh) * 2022-07-01 2022-07-29 广东中科半导体微纳制造技术研究院 半导体封装器件

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9548261B2 (en) * 2013-03-05 2017-01-17 Nichia Corporation Lead frame and semiconductor device
KR102059402B1 (ko) * 2013-04-15 2019-12-26 삼성전자주식회사 전자소자 패키지 및 이에 사용되는 패키지 기판
KR20140130884A (ko) * 2013-05-02 2014-11-12 주식회사 포스코엘이디 광 반도체 조명장치
JP2015041722A (ja) * 2013-08-23 2015-03-02 株式会社東芝 半導体発光装置
US9525265B2 (en) * 2014-06-20 2016-12-20 Kla-Tencor Corporation Laser repetition rate multiplier and flat-top beam profile generators using mirrors and/or prisms
JP6724939B2 (ja) * 2017-10-20 2020-07-15 日亜化学工業株式会社 発光装置
CN111933773A (zh) * 2019-05-13 2020-11-13 展晶科技(深圳)有限公司 发光体封装结构

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1523681A (zh) * 2003-02-18 2004-08-25 夏普株式会社 半导体发光装置及其制造方法和电子图像拾取装置
KR20080041794A (ko) * 2006-11-08 2008-05-14 삼성전기주식회사 발광 다이오드 패키지
US20090134408A1 (en) * 2007-11-28 2009-05-28 Samsung Electronics Co., Ltd. Light emitting diode package, method of fabricating the same and backlight assembly including the same
CN101777549A (zh) * 2009-01-13 2010-07-14 先进开发光电股份有限公司 化合物半导体元件的封装模块结构及其制造方法
US20100181582A1 (en) * 2009-01-22 2010-07-22 Intematix Corporation Light emitting devices with phosphor wavelength conversion and methods of manufacture thereof
US7923271B1 (en) * 2010-03-17 2011-04-12 GEM Weltronics TWN Corporation Method of assembling multi-layer LED array engine

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2023413A1 (en) * 2006-05-31 2009-02-11 Sanyo Electric Co., Ltd. Electronic component and method for manufacturing same
JP4205135B2 (ja) * 2007-03-13 2009-01-07 シャープ株式会社 半導体発光装置、半導体発光装置用多連リードフレーム
JP5355219B2 (ja) * 2008-05-21 2013-11-27 京セラ株式会社 発光素子搭載用基板および発光装置
KR100888236B1 (ko) * 2008-11-18 2009-03-12 서울반도체 주식회사 발광 장치
WO2011030746A1 (ja) * 2009-09-11 2011-03-17 旭化成ケミカルズ株式会社 発光装置用リフレクタ及び発光装置
KR101064084B1 (ko) * 2010-03-25 2011-09-08 엘지이노텍 주식회사 발광소자 패키지 및 그 제조방법
CN106067511A (zh) * 2010-03-30 2016-11-02 大日本印刷株式会社 带树脂引线框、半导体装置及其制造方法
TWM397034U (en) * 2010-07-21 2011-01-21 I Chiun Precision Ind Co Ltd Thinning leadframe capable of preventing moisture permeation
TW201221549A (en) * 2010-11-19 2012-06-01 Du Pont Blends comprising branched poly (trimethylene ether) polyols

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1523681A (zh) * 2003-02-18 2004-08-25 夏普株式会社 半导体发光装置及其制造方法和电子图像拾取装置
KR20080041794A (ko) * 2006-11-08 2008-05-14 삼성전기주식회사 발광 다이오드 패키지
US20090134408A1 (en) * 2007-11-28 2009-05-28 Samsung Electronics Co., Ltd. Light emitting diode package, method of fabricating the same and backlight assembly including the same
CN101777549A (zh) * 2009-01-13 2010-07-14 先进开发光电股份有限公司 化合物半导体元件的封装模块结构及其制造方法
US20100181582A1 (en) * 2009-01-22 2010-07-22 Intematix Corporation Light emitting devices with phosphor wavelength conversion and methods of manufacture thereof
US7923271B1 (en) * 2010-03-17 2011-04-12 GEM Weltronics TWN Corporation Method of assembling multi-layer LED array engine

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102683552A (zh) * 2012-05-04 2012-09-19 佛山市蓝箭电子有限公司 一种具有防水功能的表面贴装led及其支架
CN103835043A (zh) * 2014-03-20 2014-06-04 祝洪哲 天然麻纤维混纺的段彩纱线
WO2017059574A1 (zh) * 2015-10-09 2017-04-13 魏晓敏 Led发光单元及模组
CN114824040A (zh) * 2022-07-01 2022-07-29 广东中科半导体微纳制造技术研究院 半导体封装器件

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