TWI447971B - 發光二極體封裝結構 - Google Patents
發光二極體封裝結構 Download PDFInfo
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- TWI447971B TWI447971B TW100115709A TW100115709A TWI447971B TW I447971 B TWI447971 B TW I447971B TW 100115709 A TW100115709 A TW 100115709A TW 100115709 A TW100115709 A TW 100115709A TW I447971 B TWI447971 B TW I447971B
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- emitting diode
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- 239000000758 substrate Substances 0.000 claims description 26
- 238000005538 encapsulation Methods 0.000 claims description 17
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
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- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims 2
- AJXBBNUQVRZRCZ-UHFFFAOYSA-N azanylidyneyttrium Chemical compound [Y]#N AJXBBNUQVRZRCZ-UHFFFAOYSA-N 0.000 claims 1
- 159000000008 strontium salts Chemical class 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 4
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- -1 diamond-like Polymers 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
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- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
本發明涉及半導體結構,尤其涉及一種發光二極體封裝結構。
目前發光二極體(Light Emitting Diode,LED)封裝結構通常包括一個反射杯結構,所述反射杯常設於基板的上方,發光二極體放置於反射杯中。這種發光二極體封裝結構中基板與反射杯之間容易形成縫隙,水汽和灰塵容易沿該縫隙進入封裝後的發光二極體封裝結構中,從而影響該發光二極體封裝結構的壽命,甚至造成發光二極體的失效。
有鑒於此,有必要提供一種能夠防止水氣進入的發光二極體封裝結構。
一種發光二極體封裝結構,其包括基板、電極、反射杯、發光二極體晶片和封裝層,所述基板包括第一表面、相對的第二表面,所述電極至少為兩個,所述電極形成在所述基板上,所述發光二極體晶片與所述電極電性連接,所述反射杯位於所述基板的第一表面,每一電極設有凹槽,所述封裝層覆蓋所述發光二極體晶片,並填滿所述電極的凹槽。
上述發光二極體封裝結構中,由於封裝層向下延伸填滿電極的凹槽,有利於提高封裝層與電極之間的密合度,以及增加外界的水
汽進入該發光二極體晶片的路徑距離,有效的保護發光二極體晶片免受水氣等影響。
100、200、300‧‧‧發光二極體封裝結構
10、10a‧‧‧基板
11‧‧‧第一表面
12‧‧‧第二表面
20、20a、20b‧‧‧電極
21‧‧‧頂面
22、22a、22b‧‧‧凹槽
23‧‧‧電連接端
30、30a‧‧‧發光二極體晶片
31‧‧‧金屬導線
40、40a‧‧‧反射杯
50、50a、50b‧‧‧封裝層
圖1是本發明第一實施方式提供的一種發光二極體封裝結構剖視圖。
圖2是本圖1中發光二極體封裝結構的俯視圖。
圖3是本發明第二實施方式提供的一種發光二極體封裝結構剖視圖。
圖4是本發明第三實施方式提供的一種發光二極體封裝結構剖視圖。
下面將結合附圖對本發明實施例作進一步的詳細說明。
請參閱圖1及圖2,本發明的第一實施方式提供一種發光二極體封裝結構100,其包括基板10、電極20、發光二極體晶片30、反射杯40和封裝層50。
該基板10呈板體狀設置,具有上下相對的第一表面11及第二表面12。所述基板10為絕緣體,可選自聚甲基丙烯酸甲酯、石墨、矽、陶瓷、類鑽、環氧樹脂或矽烷氧樹脂等。
電極20至少為兩個,均形成在所述基板10上,並且電極20相互之間電絕緣。所述電極20所用的材料為導電性能較好的金屬材料,如金、銀、銅、鉑、鋁、鎳、錫或鎂中的一種或幾種的合金。每一電極20呈矩形體設置。每一電極20的頂面21與基板10的第一表面11平齊,其底面嵌入在基板10內部。每一電極20的背向另一電
極20的一端向外延伸超出基板10的側面,以形成連接外部電源的電連接端23。每一電極20在頂面21上設有凹槽22。該凹槽22呈條狀設置,二電極20的凹槽22共同圍繞所述發光二極體晶片30。在本實施例中,二電極20的凹槽22組合大致圍成橢圓環形。可以理解地,二電極20的凹槽22可以組合圍成圓環形或者矩形。
發光二極體晶片30貼設於基板10的第一表面11上。更具體的,發光二極體晶片30貼設於一電極20的頂面21上。所述發光二極體晶片30通過金屬導線31與所述電極20電性連接。可以理解的,該發光二極體晶片30也可以採用覆晶的方式固定於電極20上並與電極20電連接。
所述反射杯40環繞所述發光二極體晶片30並設置在基板10的第一表面11上。該反射杯40的內壁底緣置於所述二電極20的凹槽22的外側或者與凹槽22的外緣平齊。在本實施中,該反射杯40的內壁底緣與凹槽22的外緣平齊,並覆蓋二電極20頂面的凹槽22外側部分。
封裝層50形成於所述基板10上的反射杯40內,覆蓋所述發光二極體晶片30和金屬導線31。所述封裝層50的材質可以為矽膠(silicone)、環氧樹脂(epoxy resin)或二者的組合物。所述封裝層50還可以包含螢光轉換材料,該螢光轉換材料可以為石榴石基螢光粉、矽酸鹽基螢光粉、原矽酸鹽基螢光粉、硫化物基螢光粉、硫代鎵酸鹽基螢光粉和氮化物基螢光粉。該封裝層50填滿二電極20頂面的凹槽22。由於二電極20的凹槽22圍繞發光二極體晶片30,封裝層50向下延伸填滿電極20的凹槽22,有利於提高封裝層50與電極20之間的密合度,以及增加外界的水汽進入該發光二
極體晶片30的路徑距離,有效的保護發光二極體晶片30免受水氣等影響。
請參閱圖3,為本發明的第二實施方式提供的發光二極體封裝結構200。該發光二極體封裝結構200包括基板10a、電極20a、發光二極體晶片30a、反射杯40a和封裝層50a。與第一實施方式的發光二極體封裝結構100不同之處在於,發光二極體封裝結構200的每一電極20a的凹槽22a並非呈條狀,而是自電極20a中部凹陷至靠近另外一電極20a的一端,即呈弧形切口狀。二電極20a的凹槽22a組合大致圍成橢圓形。由於凹槽22a的作用,每一電極20a設置封裝層50a的區域部分的厚度小於該電極20a設置反射杯40a的區域部分的厚度。一發光二極體晶片30a貼設於一電極20a的凹槽22a的頂面上。該封裝層50a覆蓋所述發光二極體晶片30a並填滿電極20a的凹槽22a。
請參閱圖4,為本發明的第三實施方式提供的發光二極體封裝結構300。與第一實施方式的發光二極體封裝結構100不同之處在於,發光二極體封裝結構300的每一電極20b的凹槽22b的底部朝外側延伸從而使凹槽22b的橫截面呈L型設置。封裝層50a延伸填滿凹槽22b以及增加外界的水汽進入該發光二極體晶片30的路徑距離。可以理解地,凹槽22b還可以設置呈倒T型。
綜上所述,本發明符合發明專利要件,爰依法提出專利申請。惟,以上所述者僅為本發明之較佳實施例,舉凡熟悉本案技藝之人士,在爰依本發明精神所作之等效修飾或變化,皆應涵蓋於以下之申請專利範圍內。
100‧‧‧發光二極體封裝結構
10‧‧‧基板
11‧‧‧第一表面
12‧‧‧第二表面
20‧‧‧電極
21‧‧‧頂面
22‧‧‧凹槽
23‧‧‧電連接端
30‧‧‧發光二極體晶片
31‧‧‧金屬導線
40‧‧‧反射杯
50‧‧‧封裝層
Claims (9)
- 一種發光二極體封裝結構,包括基板、電極、反射杯、發光二極體晶片和封裝層,所述基板包括第一表面、相對的第二表面,所述電極至少為兩個,所述電極形成在所述基板上,所述發光二極體晶片與所述電極電性連接,其改良在於:所述反射杯位於所述基板的第一表面,每一電極設有凹槽,所述封裝層覆蓋所述發光二極體晶片,並填滿所述電極的凹槽,所述電極的凹槽的底部朝外側延伸而使凹槽的橫截面呈L型設置。
- 如申請專利範圍第1項所述之發光二極體封裝結構,其中每一電極的頂面與所述基板的第一表面平齊,每一電極的凹槽自電極的頂面凹陷設置。
- 如申請專利範圍第1項所述之發光二極體封裝結構,其中每一電極的凹槽呈條形設置並圍繞所述發光二極體晶片。
- 如申請專利範圍第3項所述之發光二極體封裝結構,其中所述電極的凹槽組合圍成橢圓環形。
- 如申請專利範圍第3項所述之發光二極體封裝結構,其中所述電極的凹槽的外緣與該反射杯的內壁底緣對應平齊。
- 如申請專利範圍第1項所述之發光二極體封裝結構,其中所述電極設置封裝層的區域部分的厚度小於該電極設置反射杯的區域部分的厚度。
- 如申請專利範圍第1項所述之發光二極體封裝結構,其中該封裝層內摻雜有螢光粉。
- 如申請專利範圍第7項所述之發光二極體封裝結構,其中該螢光粉選自釔鋁石榴石、鋱釔鋁石榴石、氮化物、硫化物及矽酸鹽中的一種或幾種的組合。
- 如申請專利範圍第1項所述之發光二極體封裝結構,其中該反射杯環繞所述發光二極體晶片。
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CN201110110696.XA CN102760824B (zh) | 2011-04-29 | 2011-04-29 | 发光二极管封装结构 |
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CN102683552A (zh) * | 2012-05-04 | 2012-09-19 | 佛山市蓝箭电子有限公司 | 一种具有防水功能的表面贴装led及其支架 |
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CN102760824B (zh) | 2016-06-08 |
US9123870B2 (en) | 2015-09-01 |
TW201244192A (en) | 2012-11-01 |
CN102760824A (zh) | 2012-10-31 |
US20120273819A1 (en) | 2012-11-01 |
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