TWI414092B - 發光二極體封裝結構及其製造方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/58—Metal-containing linkages
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- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Description
本發明涉及半導體結構,尤其涉及一種發光二極體封裝結構及其製造方法。
習知的發光二極體(Light Emitting Diode, LED)封裝結構通常包括一個基板,形成於基板上的電極、在基板裝設的發光二極體晶片以及覆蓋發於光二極體晶片的封裝層。在另一些結構中,還可以在基板上形成反射杯環繞於發光二極體晶片,封裝層填充於反射杯內並覆蓋於發光二極體晶片。這些發光二極體封裝結構中封裝層與基板之間或反射杯與基板之間容易形成縫隙,水汽和灰塵容易沿該縫隙進入封裝後的發光二極體封裝結構中,從而影響該發光二極體封裝結構的壽命,甚至造成發光二極體的失效。
有鑒於此,有必要提供一種密封性更好的發光二極體封裝結構及其製造方法。
一種發光二極體封裝結構,包括基板、形成於基板上的電極、裝設於基板上並與電極電連接的發光二極體晶片以及設於基板上環繞所述發光二極體晶片的封裝物,所述基板包括第一表面和與第一表面相對的第二表面,所述發光二極體晶片設置於基板的第一表面上,還包括一個覆蓋部,該覆蓋部圍設於該發光二極體封裝結構的週邊並密封所述基板、電極與基板上的封裝物相接合的接縫,該覆蓋部的材料為鈦矽酸鹽樹脂,其反應單體包括庚烷,稀丙基三甲氧基矽烷,正鈦酸四丁酯及正矽酸甲酯,質量百分比分別為,庚烷大於60.0%,稀丙基三甲氧基矽烷7.0%至13.0%、正鈦酸四丁酯5.0%至10.0%以及正矽酸甲酯小於0.1%。
一種發光二極體封裝結構的製造方法,包括以下步驟:
提供形成有電極的基板,該基板具有第一表面和相對的第二表面,該電極形成在第一表面上;
將發光二極體晶片固定於基板的第一表面上,並將發光二極體晶片與所述電極電性連接;
形成一封裝層於基板上,覆蓋所述發光二極體晶片;
形成覆蓋部於發光二極體封裝結構的週邊,該覆蓋部覆蓋基板和基板上設置的元件的接縫,該覆蓋部的材料為鈦矽酸鹽樹脂,其反應單體及含量包括,庚烷大於60.0%,稀丙基三甲氧基矽烷7.0%至13.0%、正鈦酸四丁酯5.0%至10.0%以及正矽酸甲酯小於0.1%。
上述發光二極體封裝結構中,由於在發光二極體封裝結構的週邊設置覆蓋部,該覆蓋部採用鈦矽酸鹽樹脂製成,其具有良好的防水效果,將其覆蓋於基板與基板上設置的封裝物對接的接縫處,從而使外界的水汽和雜質難於穿過該覆蓋部進入到封裝體內部,起到有效的防塵、防水的作用。
請參閱圖1和圖2,本發明的一實施方式提供一種發光二極體封裝結構10,其包括基板11、設置於該基板11上的電極12、裝設於基板11上的發光二極體晶片13、形成於基板11上並環繞發光二極體晶片13的封裝物和圍設於該發光二極體封裝結構10週邊的覆蓋部16。本實施例中封裝物為覆蓋發光二極體晶片13於基板11上的封裝層15及位於該封裝層15週邊的反射杯14。
所述基板11包括相對的第一表面111和第二表面112及連接該第一表面111和第二表面112的相對兩側面。在本實施例中,該基板11包括相對的兩條第一邊113和相對的兩條第二邊114,該第一邊113和第二邊114圍成矩形狀。可以理解,所述基板11各邊的長度可以相同或不同,進一步的,所述基板11的形狀並不限於矩形,其形狀還可以為圓形等。
所述電極12設置於所述基板11上,並從該基板11的第一表面111繞行基板11的相對兩側面延伸至基板11的第二表面112。所述電極12至少為兩個。所述電極12相互間隔設置,使兩電極12之間相互電性絕緣。所述電極12所用的材料為導電性能較好的金屬材料,如金、銀、銅、鉑、鋁、鎳、錫或鎂中的一種或幾種的合金。
所述發光二極體晶片13位於第一表面111上。更具體的,發光二極體晶片13可貼置於其中一電極12上。所述發光二極體晶片13透過金屬導線131與所述電極12電性連接。可以理解的,該發光二極體晶片13也可以採用覆晶的方式固定於電極12上並與電極12電連接。
所述反射杯14形成於所述第一表面111上。該反射杯14環繞基板11的第一邊113和第二邊114將發光二極體晶片13圍設於反射杯14之中。所述反射杯14的週邊與基板11的週邊平滑對接。反射杯14的底面在基板11的第一表面111與電極12的接合處形成接縫141。
所述封裝層15形成於所述基板11上的反射杯14內,覆蓋所述發光二極體晶片13和金屬導線131。所述封裝層15的材質可以為矽膠(silicone)、環氧樹脂(epoxy resin)或二者的混合物。所述封裝層15還可以包含螢光轉換材料,該螢光轉換材料可以為石榴石基螢光粉、矽酸鹽基螢光粉、原矽酸鹽基螢光粉、硫化物基螢光粉、硫代鎵酸鹽基螢光粉和氮化物基螢光粉。封裝層15在基板11的第一表面111與所述電極12的接合處形成接縫141。
所述覆蓋部16設置於發光二極體封裝結構10的週邊,密封基板11、電極12與反射杯14、封裝層15之間的接縫141,即,覆蓋部16密封圍繞基板11、電極12與封裝物之間的接縫141。在本實施例中,該覆蓋部16覆蓋於基板11和電極12與反射杯14對接的接縫141處,並以該接縫141處為起點分別向基板11和封裝層15背向延伸,該覆蓋部16不超過該基板11的第二表面112和反射杯14遠離發光二極體晶片13的頂面。更確切地說,該覆蓋部16由接縫141處向基板11的第二表面112延伸且未延伸至該第二表面112;該覆蓋部16由接縫141處向反射杯14的頂面方向延伸且未延伸至反射杯14的頂面。可以理解地,該覆蓋部16的形狀及大小具有靈活性,可根據設計需要和材料用量的要求進行控制。
該覆蓋部16的材料為鈦矽酸鹽樹脂(silicone-titanate resin)。該鈦矽酸鹽樹脂的反應單體包括:庚烷(Heptane),稀丙基三甲氧基矽烷(Allytrimethoxysilane)、正鈦酸四丁酯(Tetrabutyl titanate)以及正矽酸甲酯(Tetramethoxysilane)。各單體的質量百分比為:庚烷(Heptane)大於60.0%,稀丙基三甲氧基矽烷(Allytrimethoxysilane)7.0%至13.0%、正鈦酸四丁酯(Tetrabutyl titanate)5.0%至10.0%以及正矽酸甲酯(Tetramethoxysilane)小於0.1%。該覆蓋部16具有良好的防水效果,可以避免外界的水汽或雜質透過該接縫141從而進入到封裝體的內部。
請參閱圖3,本發明另一實施方式提供的發光二極體封裝結構20,其包括:基板11,該基板11上形成有兩電極12,裝設於基板11上並與電極12電連接的發光二極體晶片13,覆蓋發光二極體晶片13與基板11的封裝物和圍設於該發光二極體封裝結構20週邊的覆蓋部16。本實施例中封裝物為封裝層25。
所述封裝層25直接覆蓋於基板11的第一表面111上,並與基板11的側邊對接。該封裝層25與第一表面111的對接處形成接縫241。在本實施方式中,該封裝層25的材質為矽膠。
所述覆蓋部16環繞該發光二極體晶片20的週邊,密封覆蓋於基板11、電極12與對接的封裝層25的週邊的接縫241處,即,覆蓋部16密封圍繞基板11、電極12與封裝物之間的接縫241。該覆蓋部16的材料為鈦矽酸鹽樹脂(silicone-titanate resin),其反應單體及含量與前述實施方式中相同。該覆蓋部16以接縫241為起點,分別向封裝層25和電極12兩相反的方向各延伸一段距離d。該距離d較小,以不對發光二極體晶片13發出的光線形成遮擋為佳。以發光二極體晶片13的出光角度為120°為例,距離d與發光二極體晶片13距基板11的側壁距離的比值需小於tan30°,如此可控制該覆蓋部16在發光二極體晶片13發射光線角度之外,而此時,距離d的大小隨發光二極體晶片13距基板11的側壁的距離而變化。在其他實施方式中,若距離d較大,使覆蓋部16對發光二極體晶片13形成遮擋,然而由於覆蓋部16的折射率小於封裝層25的折射率,故仍然可以增加封裝結構的出光效率。鈦矽酸鹽樹脂與矽膠兩者的密合度較高,故直接將覆蓋部16覆蓋於基板11、電極12與封裝層25的接合處能夠使防水性能更佳。
請參閱圖4,本發明實施方式提供的一種發光二極體封裝結構的製造方法,包括以下步驟:
提供形成有電極12的基板11,該基板11具有第一表面111和相對的第二表面112,該電極12形成在第一表面111上;
將發光二極體晶片13固定於基板11的第一表面111上,並將發光二極體晶片13與所述電極12電性連接;
形成一封裝層15於基板11上,覆蓋所述發光二極體晶片13;
形成覆蓋部16於發光二極體封裝結構的週邊,該覆蓋部16覆蓋基板11和基板11上設置的封裝層15的接縫141。
所述電極12可透過機械、蝕刻或鐳射加工技術在基板11上形成孔洞後,再利用濺鍍、電鍍、電鑄或蒸鍍的方式形成。
發光二極體晶片13採用固晶打線方式固定於基板11上,並透過金屬導線131與電極12電連接。
所述覆蓋部16採用鈦矽酸鹽樹脂(silicone-titanate resin)材料,利用噴塗或浸泡的方式製作而成。採用噴塗的方式可以使製作過程簡單,並能夠根據所需的用量進行噴塗,有效地節省材料,且可根據設計需要靈活的控制噴塗的厚度、面積和位置等。採用浸泡的方式,是先將發光二極體封裝結構用保護材料包裹,僅預留需要形成覆蓋部16的區域裸露於保護材料之外,然後將發光二極體封裝結構容置於鈦矽酸鹽樹脂溶液中,再將其取出,加熱燒結,去除包裹材料,形成具有覆蓋部16的發光二極體封裝結構。
本發明實施方式提供的發光二極體封裝結構中,由於在基板、電極和基板上設置的封裝物對接的接縫處密封設置覆蓋部,該覆蓋部具有較好的防水性,使外界的水汽和雜質難於穿過覆蓋部並透過接縫進入到封裝體以內,避免了發光二極體晶片受到外界的污染而損壞。且該覆蓋部與反射杯也具有較好的接合性,使兩者之間的接合更加緊密。
綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。
10、20‧‧‧發光二極體封裝結構
11‧‧‧基板
111‧‧‧第一表面
112‧‧‧第二表面
113‧‧‧第一邊
114‧‧‧第二邊
12‧‧‧電極
13‧‧‧發光二極體晶片
131‧‧‧金屬導線
14‧‧‧反射杯
141、241‧‧‧接縫
15、25‧‧‧封裝層
16‧‧‧覆蓋部
圖1是本發明一實施方式提供的一種發光二極體封裝結構剖視示意圖。
圖2是本發明一實施方式提供的一種發光二極體封裝結構俯視示意圖。
圖3是本發明另一實施方式提供的一種發光二極體封裝結構剖視示意圖。
圖4是本發明一實施方式提供的一種發光二極體封裝結構的製造方法流程圖。
10‧‧‧發光二極體封裝結構
11‧‧‧基板
111‧‧‧第一表面
112‧‧‧第二表面
12‧‧‧電極
13‧‧‧發光二極體晶片
131‧‧‧金屬導線
14‧‧‧反射杯
141‧‧‧接縫
15‧‧‧封裝層
16‧‧‧覆蓋部
Claims (11)
- 一種發光二極體封裝結構,包括基板、形成於基板上的電極、裝設於基板上並與電極電連接的發光二極體晶片以及設於基板上環繞所述發光二極體晶片的封裝物,所述基板包括第一表面和與第一表面相對的第二表面,所述發光二極體晶片設置於基板的第一表面上,其改良在於:還包括一個覆蓋部,該覆蓋部圍設於該發光二極體封裝結構的週邊並密封所述基板、電極與基板上的封裝物相接合的接縫,該覆蓋部的材料為鈦矽酸鹽樹脂,其反應單體包括庚烷,稀丙基三甲氧基矽烷,正鈦酸四丁酯及正矽酸甲酯,質量百分比分別為,庚烷大於60.0%,稀丙基三甲氧基矽烷7.0%至13.0%、正鈦酸四丁酯5.0%至10.0%以及正矽酸甲酯小於0.1%。
- 如申請專利範圍第1項所述的發光二極體封裝結構,其中,所述封裝物包含一將所述發光二極體晶片覆蓋在基板上的封裝層。
- 如申請專利範圍第2項所述的發光二極體封裝結構,其中,所述電極至少為兩個,且自基板的第一表面延伸至第二表面,所述接縫形成於所述封裝層與基板及電極的接合處。
- 如申請專利範圍第3項所述的發光二極體封裝結構,其中,所述覆蓋部覆蓋於該接縫,並以該接縫為中心分別向基板和封裝層背向延伸,且該覆蓋部未延伸至該基板的第二表面和封裝層的頂面。
- 如申請專利範圍第3項所述的發光二極體封裝結構,其中,所述覆蓋部的折射率小於封裝層的折射率。
- 如申請專利範圍第2項所述的發光二極體封裝結構,其中,所述封裝物還包括一個環繞所述封裝層的反射杯,該反射杯的底面與基板的第一表面接合,所述接縫形成於反射杯與所述基板及電極於基板第一表面的對接處。
- 如申請專利範圍第6項所述的發光二極體封裝結構,其中,所述覆蓋部覆蓋於該接縫,並以該接縫為起點分別自所述基板和反射杯背向延伸,且該覆蓋部未延伸至該基板的第二表面和反射杯的頂面。
- 一種發光二極體封裝結構的製造方法,包括以下步驟:
提供形成有電極的基板,該基板具有第一表面和相對的第二表面,該電極形成在第一表面上;
將發光二極體晶片固定於基板的第一表面上,並將發光二極體晶片與所述電極電性連接;
形成一封裝層於基板上,覆蓋所述發光二極體晶片;
形成覆蓋部於發光二極體封裝結構的週邊,該覆蓋部密封基板、電極與基板上設置的封裝層相接合的接縫,該覆蓋部的材料為鈦矽酸鹽樹脂,其反應單體及含量包括,庚烷大於60.0%,稀丙基三甲氧基矽烷7.0%至13.0%、正鈦酸四丁酯5.0%至10.0%以及正矽酸甲酯小於0.1%。 - 如申請專利範圍第8項所述的發光二極體封裝結構的製造方法,其中,所述覆蓋部覆蓋於所述接縫,並以該接縫為起點分別自基板和封裝層背向延伸,該覆蓋部未延伸至該基板的第二表面,也不阻擋發光二極體晶片的射出的光線。
- 如申請專利範圍第8項所述的發光二極體封裝結構的製造方法,其中,將發光二極體晶片固定於基板上的步驟之前還包括在基板的第一表面上形成一個反射杯,所述覆蓋部覆蓋在基板及電極與反射杯的接縫處。
- 如申請專利範圍第8項至第10項中任意一項所述的發光二極體封裝結構的製造方法,其中,所述覆蓋部是採用浸泡或噴塗的方式製成。
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TW200745216A (en) * | 2006-04-26 | 2007-12-16 | Sekisui Chemical Co Ltd | Thermosetting composition for optical semiconductor, die bond material for optical semiconductor device, underfill material for optical semiconductor device, sealing agent for optical semiconductor device, and optical semiconductor device |
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