CN102725854B - 制造光伏电池的方法、由此产生的光伏电池及其应用 - Google Patents

制造光伏电池的方法、由此产生的光伏电池及其应用 Download PDF

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Publication number
CN102725854B
CN102725854B CN201080061602.8A CN201080061602A CN102725854B CN 102725854 B CN102725854 B CN 102725854B CN 201080061602 A CN201080061602 A CN 201080061602A CN 102725854 B CN102725854 B CN 102725854B
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CN
China
Prior art keywords
layer
dopant
substrate
photovoltaic cell
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201080061602.8A
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English (en)
Chinese (zh)
Other versions
CN102725854A (zh
Inventor
马拉特·扎克斯
加利纳·克洛莫伊茨
安德雷·西特尼科夫
奥列格·索洛杜卡
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Solar Wind Ltd
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Solar Wind Ltd
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Filing date
Publication date
Priority claimed from US12/591,390 external-priority patent/US8586862B2/en
Priority claimed from US12/591,391 external-priority patent/US20110114147A1/en
Application filed by Solar Wind Ltd filed Critical Solar Wind Ltd
Publication of CN102725854A publication Critical patent/CN102725854A/zh
Application granted granted Critical
Publication of CN102725854B publication Critical patent/CN102725854B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/148—Double-emitter photovoltaic cells, e.g. bifacial photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
CN201080061602.8A 2009-11-18 2010-11-17 制造光伏电池的方法、由此产生的光伏电池及其应用 Expired - Fee Related CN102725854B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12/591,390 2009-11-18
US12/591,391 2009-11-18
US12/591,390 US8586862B2 (en) 2009-11-18 2009-11-18 Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US12/591,391 US20110114147A1 (en) 2009-11-18 2009-11-18 Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
PCT/IB2010/055219 WO2011061693A2 (en) 2009-11-18 2010-11-17 Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof

Publications (2)

Publication Number Publication Date
CN102725854A CN102725854A (zh) 2012-10-10
CN102725854B true CN102725854B (zh) 2015-11-25

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN201080061602.8A Expired - Fee Related CN102725854B (zh) 2009-11-18 2010-11-17 制造光伏电池的方法、由此产生的光伏电池及其应用
CN2010800616051A Pending CN102754215A (zh) 2009-11-18 2010-11-17 制造光伏电池的方法、由该方法制造的光伏电池及其应用

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2010800616051A Pending CN102754215A (zh) 2009-11-18 2010-11-17 制造光伏电池的方法、由该方法制造的光伏电池及其应用

Country Status (5)

Country Link
EP (2) EP2502277A2 (https=)
JP (2) JP2013511839A (https=)
CN (2) CN102725854B (https=)
CA (2) CA2781085A1 (https=)
WO (2) WO2011061694A2 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8796060B2 (en) 2009-11-18 2014-08-05 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US8586862B2 (en) 2009-11-18 2013-11-19 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
KR101627028B1 (ko) * 2014-02-20 2016-06-03 제일모직주식회사 양면형 태양전지의 제조방법
KR101627029B1 (ko) * 2014-02-20 2016-06-03 제일모직주식회사 Ibc 태양전지의 제조방법
CN104051575B (zh) * 2014-06-20 2016-08-17 润峰电力有限公司 一种仿生双面受光太阳能电池的制作工艺
CN108352413B (zh) * 2015-10-25 2021-11-02 索拉昂德有限公司 双面电池制造方法
CN107340785B (zh) * 2016-12-15 2021-05-18 江苏林洋新能源科技有限公司 一种基于智能化控制的双面光伏电池组件跟踪方法及控制器
CH713453A1 (de) 2017-02-13 2018-08-15 Evatec Ag Verfahren zur Herstellung eines Substrates mit einer bordotierten Oberfläche.
WO2019135214A1 (en) * 2018-01-08 2019-07-11 Solaround Ltd. Bifacial photovoltaic cell and method of fabrication
PE20212096A1 (es) * 2019-01-30 2021-11-04 Tegula Solucoes Para Telhados Ltda Celda fotovoltaica, proceso de fabricacion de celda fotovoltaica encapsulada, conjunto de conexion electrica para placa fotovoltaica y placa fotovoltaica
CN114649427B (zh) 2021-09-14 2023-09-12 浙江晶科能源有限公司 太阳能电池及光伏组件
CN119850580B (zh) * 2025-01-03 2025-11-21 香港理工大学深圳研究院 一种接触网零部件检测方法、装置、终端及存储介质

Citations (4)

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US4322571A (en) * 1980-07-17 1982-03-30 The Boeing Company Solar cells and methods for manufacture thereof
CN1198841A (zh) * 1995-10-05 1998-11-11 埃伯乐太阳能公司 自对准局域深扩散发射极太阳能电池
US6147297A (en) * 1995-06-21 2000-11-14 Fraunhofer Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Solar cell having an emitter provided with a surface texture and a process for the fabrication thereof
CN101179100A (zh) * 2007-01-17 2008-05-14 江苏林洋新能源有限公司 一种大面积低弯曲超薄型双面照光太阳能电池制作方法

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US4989059A (en) 1988-05-13 1991-01-29 Mobil Solar Energy Corporation Solar cell with trench through pn junction
US5871591A (en) 1996-11-01 1999-02-16 Sandia Corporation Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process
US6552414B1 (en) 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
US6180869B1 (en) 1997-05-06 2001-01-30 Ebara Solar, Inc. Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices
RU2139601C1 (ru) 1998-12-04 1999-10-10 ООО Научно-производственная фирма "Кварк" Способ изготовления солнечного элемента с n+-p-p+ структурой
TW419833B (en) 1999-07-23 2001-01-21 Ind Tech Res Inst Manufacturing method of solar cell
WO2002031892A1 (fr) * 2000-10-06 2002-04-18 Shin-Etsu Handotai Co., Ltd. Cellule solaire et procede de fabrication correspondant
JP4232597B2 (ja) * 2003-10-10 2009-03-04 株式会社日立製作所 シリコン太陽電池セルとその製造方法
DE102004036220B4 (de) 2004-07-26 2009-04-02 Jürgen H. Werner Verfahren zur Laserdotierung von Festkörpern mit einem linienfokussierten Laserstrahl
US20070113881A1 (en) * 2005-11-22 2007-05-24 Guardian Industries Corp. Method of making solar cell with antireflective coating using combustion chemical vapor deposition (CCVD) and corresponding product
EP2077587A4 (en) * 2006-09-27 2016-10-26 Kyocera Corp SOLAR CELL ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF
DE102007036921A1 (de) 2007-02-28 2008-09-04 Centrotherm Photovoltaics Technology Gmbh Verfahren zur Herstellung von Siliziumsolarzellen
KR20100032900A (ko) * 2007-07-18 2010-03-26 아이엠이씨 에미터 구조체를 제조하는 방법 및 그로부터 생성되는 에미터 구조체들
EP2259337A4 (en) * 2008-03-27 2011-08-24 Mitsubishi Electric Corp PHOTOVOLTAIC POWER DEVICE AND METHOD FOR THE PRODUCTION THEREOF
JPWO2009133607A1 (ja) * 2008-04-30 2011-08-25 三菱電機株式会社 光起電力装置の製造方法

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Publication number Priority date Publication date Assignee Title
US4322571A (en) * 1980-07-17 1982-03-30 The Boeing Company Solar cells and methods for manufacture thereof
US6147297A (en) * 1995-06-21 2000-11-14 Fraunhofer Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Solar cell having an emitter provided with a surface texture and a process for the fabrication thereof
CN1198841A (zh) * 1995-10-05 1998-11-11 埃伯乐太阳能公司 自对准局域深扩散发射极太阳能电池
CN101179100A (zh) * 2007-01-17 2008-05-14 江苏林洋新能源有限公司 一种大面积低弯曲超薄型双面照光太阳能电池制作方法

Also Published As

Publication number Publication date
WO2011061693A3 (en) 2012-01-05
JP6027443B2 (ja) 2016-11-16
CA2781085A1 (en) 2011-05-26
CN102725854A (zh) 2012-10-10
CA2780913A1 (en) 2011-05-26
EP2502278A2 (en) 2012-09-26
WO2011061693A2 (en) 2011-05-26
CN102754215A (zh) 2012-10-24
JP2013511839A (ja) 2013-04-04
WO2011061694A2 (en) 2011-05-26
JP2013511838A (ja) 2013-04-04
EP2502277A2 (en) 2012-09-26
WO2011061694A3 (en) 2012-01-19

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Granted publication date: 20151125

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