CN102693922B - 键合焊盘上的钝化材料的图案及其制造方法 - Google Patents

键合焊盘上的钝化材料的图案及其制造方法 Download PDF

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CN102693922B
CN102693922B CN201210036308.2A CN201210036308A CN102693922B CN 102693922 B CN102693922 B CN 102693922B CN 201210036308 A CN201210036308 A CN 201210036308A CN 102693922 B CN102693922 B CN 102693922B
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pad
bonding
sept
electric conducting
conducting material
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CN102693922A (zh
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S·苏塔雅
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Kaiwei International Co
Marvell International Ltd
Marvell Asia Pte Ltd
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Mawier International Trade Co Ltd
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Abstract

本发明的实施例涉及键合焊盘上的钝化材料的图案及其制造方法。一种方法包括在电子组件上形成焊盘。该焊盘包括导电材料。该方法进一步包括在导电材料的表面上提供钝化材料，以及从该表面去除钝化材料以暴露导电材料的部分从而形成包括导电材料和钝化材料的键合焊盘。

Description

键合焊盘上的钝化材料的图案及其制造方法
相关申请的交叉引用
本公开要求2011年2月15日提交的美国临时专利申请No.61/443,190的优先权，如果存在与本说明书不一致的部分，则除了那些与本说明书不一致的部分之外，将其整个说明书通过参考整体引入于此用于所有目的。
技术领域
本公开的实施例涉及半导体器件领域，更具体地涉及半导体器件上的键合焊盘的技术、结构和配置以及包括键合焊盘的其它电子器件组件。
背景技术
这里提供的背景技术的描述用于一般性地呈现本公开上下文的目的。就在该背景技术部分中进行描述而言，当前指定的发明人的工作以及本描述中的在提交时可能不被另外认定为现有技术的方面，既不明确也不隐含地承认为本公开的现有技术。
电子组件包括半导体裸片和一般包含一个或多个半导体裸片的半导体封装体，并且通常被称为“芯片”。半导体裸片通常由衬底或载体形式的另一电子组件支撑在半导体封装体中，该另一电子组件诸如包括多个引线的引线框架。可以利用引线将半导体封装体耦合到诸如电路板之类的其它电子组件或衬底。备选地，半导体封装体和其中包含的半导体裸片可以按照不同的方式耦合到其它电子组件或衬底，诸如利用焊料凸块直接耦合。
为了提供各种电子组件之间的相互电连接以及各种电子组件中的内部电连接，通常使用键合接线。键合接线一般耦合到位于电子组件上的键合焊盘。图1A是半导体裸片100的横截面图，该半导体裸片100包括在金属层106上的钝化层104内的键合焊盘102。如可见的，键合焊盘102暴露，并且钝化层104在键合焊盘102的位置处完全或者接近完全开口从而暴露键合焊盘102。键合焊盘102一般由诸如铝之类的合适类型的导电材料制成。将耦合到键合焊盘102的键合接线112一般由诸如铜或金之类的另一导电材料制成。键合接线112的末端被燃烧以创建将耦合到键合焊盘102的端部114。如在图1B中可见的，然后将键合接线端部114施加到键合焊盘102，以便将键合接线112耦合到键合焊盘102，由此提供键合接线112与键合焊盘102之间的导电连接。键合接线112到键合焊盘102的耦合可以在键合接线端部114由于创建键合接线端部114的燃烧而仍柔软或熔融的同时执行，或者通过对键合接线端部114进行重新加热的焊接工艺执行。
当键合接线端部114耦合到键合焊盘102时，将金属间化合物(未示出)形成在键合接线端部114与键合焊盘102之间，以由此提供键合接线端部114与键合焊盘102之间的键合。一般执行诸如可靠性测试之类的各种测试，以测试键合接线端部114到键合焊盘102的键合。这种测试会导致键合接线端部114与键合焊盘102之间的键合受各种铁和/或化学物质例如氯的污染。这种污染会导致键合接线端部114与键合焊盘102之间的键合和在它们之间形成的金属间化合物的一体化中的问题。键合的一体化中的问题可以包括键合的电位失效以及/或者键合接线端部114与键合焊盘102的分离。
发明内容
本公开提供一种方法，该方法包括在电子组件上形成焊盘，其中焊盘包括导电材料。该方法进一步包括在导电材料的表面上提供钝化材料，以及从该表面去除钝化材料以暴露导电材料的部分从而形成包括导电材料和钝化材料的键合焊盘。
本公开还提供一种电子组件，该电子组件包括键合焊盘，其中键合焊盘包括导电材料和钝化材料。导电材料和钝化材料布置成使得键合焊盘的接触表面基本上不平滑并限定峰和谷。
本公开还提供一种方法，该方法包括在电子组件上的一个位置处提供钝化材料，其中钝化材料布置成使电子组件在该位置处的部分暴露的图案。该方法还包括在该位置处的钝化材料上方沉积导电材料，以在该位置处提供包括钝化材料的键合焊盘，其中键合焊盘的接触表面基本上不平滑并限定峰和谷。
附图说明
通过以下结合附图的具体描述将容易理解实施例。在附图的图中，通过示例的方式而不是通过限制的方式来图示实施例。
图1A和图1B是示意性地图示用于将键合接线键合到键合焊盘的现有技术布置的横截面图。
图2A和图2B是示意性地图示用于将键合接线键合到键合焊盘的布置的一个实施例的横截面图。
图3A至图3D是图示用于这里描述的键合焊盘的钝化材料的图案的例子的顶视图。
图4A和图4B是示意性地图示用于将键合接线键合到键合焊盘的布置的另一实施例的横截面图。
图5和图6是用于制造这里描述的键合焊盘的示例性方法的工艺流程图。
具体实施方式
图2A是半导体裸片200的横截面图，该半导体裸片200包括在层206上的钝化层204内形成的焊盘202。尽管半导体裸片200一般包括多个层，但为清楚和容易理解起见，未图示这样的附加层。层206一般由诸如硅、铜(Cu)、铝(Al)、铝铜合金、铝硅合金、镍(Ni)等的材料制成。焊盘202一般包括诸如金、铜(Cu)、铝(Al)、铝铜合金、铝硅合金、镍(Ni)等的导电材料，其一般不同于构成层206的材料。钝化层204可以利用例如包括氧化物、氮化物、氧化硅、氮化硅等的任何合适的钝化材料形成。
根据各种实施例，焊盘202包括在焊盘202的顶表面上的间隔物208，以由此形成键合焊盘210。间隔物208可以由钝化材料或其它坚硬材料制成。钝化材料的例子包括如针对钝化层204所提到的例如氮化硅、氧化物、氮化物、氧化硅等。在沉积钝化层204之前，通过在层206上形成焊盘202，可以将间隔物208提供在焊盘202上。然后可以刻蚀钝化层204以暴露焊盘202。然而，根据各种实施例，钝化层204的部分留在焊盘202上。这可以通过本领域中已知的方式来实现，例如在钝化层204的沉积之前在焊盘202上提供掩膜层(未示出)，由此便于在刻蚀工艺期间从焊盘202的表面去除钝化层204的部分。作为另一例子，可以在沉积钝化材料以形成钝化层204之前在焊盘202上提供薄膜(未示出)。例如，可以沉积光致抗蚀剂膜(或任何其它适当材料)以覆盖焊盘202的基本上整个顶表面。然后可以选择性地刻蚀光致抗蚀剂膜以暴露焊盘202的顶表面的其中需要间隔物208的部分。通过已刻蚀的光致抗蚀剂膜，在焊盘202的顶表面上选择性地沉积钝化材料。钝化材料未沉积在焊盘202的顶表面的由光致抗蚀剂膜覆盖的部分上。在图2A中，保留在焊盘202上的钝化材料或钝化层204的部分表示为间隔物208。
根据各种实施例，间隔物208可以独立于钝化层204的形成而添加到焊盘202。例如，可以在层206上形成焊盘202并且可以在焊盘202和层206上方形成钝化层204。可以使钝化层204完全或者接近完全开口以暴露焊盘202。然后可以把将包括在焊盘202上的间隔物208独立地添加到焊盘202。可以从焊盘202去除钝化材料的部分以由此在焊盘202上形成间隔物208。可以利用诸如之前提到的刻蚀工艺或薄膜工艺之类的任何合适的工艺去除钝化材料。
如可在图2A中所见的，焊盘202和间隔物208共同形成键合焊盘210。键合焊盘210是不平滑或者不平坦的并且限定多个峰218a和多个谷218b(但为清楚的目的，在图2A中仅标示了多个峰和谷中的几个)。多个峰218a和多个谷218b限定键合焊盘210的接触表面。尽管在图2A和图2B的横截面中将间隔物208图示为具有基本上方形的形状，但这并不旨在于限制，其它形状是可能的。
参照图2B，一旦完成键合焊盘210，就可以将键合接线212键合到键合焊盘210。键合接线212一般由诸如金、铜(Cu)、铝(Al)、铝铜合金、铝硅合金、镍(Ni)等的导电材料制成，但一般不同于构成键合焊盘210的材料。或者直接在键合接线端部214的形成之后(在键合接线端部114由于创建键合接线端部114的键合接线212的燃烧而仍柔软或熔融的同时)，或者通过合适的焊接工艺，将键合接线212的端部214耦合到键合焊盘210。键合接线端部214由此通过填充在峰218a之间的谷218b中而耦合或者键合到键合焊盘210。将金属间化合物(未示出)形成在间隔物208之间，以由此将键合接线端部214键合到键合焊盘210。尽管图2B将键合接线端部214图示为不完全覆盖键合焊盘210，但根据各种实施例，键合接线端部214可以整个覆盖或基本上覆盖键合焊盘210。类似地，如果需要，键合接线端部214可以覆盖更少的键合焊盘210。
在对形成于键合接线端部214与键合焊盘210之间的键合进行测试期间和/或之后，来自测试工艺的诸如铁和/或化学物质(例如氯)之类的污染物可能由于移动通过形成在键合接线端部214与键合焊盘210之间的键合而开始干扰或者损害形成在键合接线端部214与键合焊盘210之间的键合的一体化。当污染物沿着形成在键合接线端部214与键合焊盘210之间的键合移动时，污染物将会遇到键合焊盘210上的间隔物208。间隔物208阻止污染物进一步传播通过形成在键合接线端部214与键合焊盘210之间的键合。这会带来保持完整和牢固的键合的一体化，从而防止形成在键合接线端部214与键合焊盘210之间的键合的失效。而且，由于间隔物208以及峰218a和谷218b提供不平滑或不平坦的接触表面，所以改善了键合接线端部214与键合焊盘210之间的粘附性。
根据各种实施例，键合焊盘210上的间隔物208布置成图案。图3A至图3D是布置成各种图案的例子的裸片焊盘210的间隔物208的顶视图。如可见的，这些例子包括圆形内的圆形(图3A)、方形内的方形(图3B)、棋盘型图案(图3C)和对角线棋盘型图案(图3D)。图案的这些例子并不意味着限制，并且本公开的范围并不旨在于由此进行限制。附加地，尽管将键合焊盘210图示为基本上方形，但对于键合焊盘210，诸如圆形、矩形、三角形等的其它形状是可能的。类似地，对于创建图案而言，其它形状也是可能的(例如，可以使用圆形或三角形来创建棋盘型图案)。
图4A和图4B是半导体裸片400的横截面图，该半导体裸片400包括键合焊盘410的另一实施例，该键合焊盘410包括间隔物408。在该实施例中，在键合焊盘410的形成之前，将间隔物408直接提供在层406上。可以以之前描述的方式将间隔物408形成在层406上。如果需要，可以按照之前描述的图案形成间隔物408。层406一般由诸如硅、铜(Cu)、铝(Al)、铝铜合金、铝硅合金、镍(Ni)等的材料制成。间隔物408可以由包括例如氧化物、氮化物、氧化硅、氮化硅等的任何合适的钝化材料制成。尽管在图4A和图4B的横截面中将间隔物408图示为具有基本上方形形状，但这并不意味着限制，其它形状是可能的。
一旦间隔物408适当地处于层406上需要键合焊盘410的位置处，就将诸如金、铜(Cu)、铝(Al)、铝铜合金、铝硅合金、镍(Ni)等的导电材料402沉积在间隔物408上方，以形成包括间隔物408的键合焊盘410。导电材料402一般不同于构成层406的材料。
如可在图4A中所见的，导电材料402的顶表面一般是不平滑或者不平坦的，并因而限定如下接触表面，该接触表面一般限定多个峰418a和多个谷418b(但为清楚的目的，在图4A中仅标示了多个峰和谷中的几个)。如可在图4B中所见的，键合接线412的端部414可以在之前关于图2A和图2B描述的接触表面处耦合到键合焊盘410。键合接线端部414填充在峰418a之间的谷418b中，以由此将键合接线端部414键合到键合焊盘410。这可以带来键合接线端部414与键合焊盘410之间的更牢固的键合。附加地，导电材料402内的间隔物408可以防止可能由键合接线端部414与键合焊盘410之间的键合的可靠性测试带来的污染物在键合接线端部414与键合焊盘410之间的键合内的传播。而且，间隔物408以及峰418a和谷418b共同提供不平滑或不平坦的接触表面，由此改善键合接线端部414与键合焊盘410之间的粘附性。由于间隔物408由钝化材料或其它坚硬材料诸如氮化硅制成，所以间隔物408可以用作为键合接线端部414的结构支撑。当键合接线端部414按压住导电材料402时，间隔物408确保足够的导电材料402保留在键合接线端部414与层406之间。两个相邻间隔物408之间的空间可以用来限制导电材料402，由此保持粘附和连接。
尽管图4B将键合接线端部414图示为不完全覆盖键合焊盘410，但根据各种实施例，键合接线端部414可以整个覆盖或基本上覆盖键合焊盘410。类似地，如果需要，则键合接线端部414可以覆盖更少的键合焊盘410。
尽管已经将键合焊盘210、410描述为耦合到例如半导体裸片200、400的层206、406的层，但键合焊盘210、410可以形成在其它类型的布置上。例如，键合焊盘210、410可以位于硅通孔(TSV)上。附加地，尽管本公开将键合焊盘210、410描述为包括或者限定在半导体裸片200、400上，但键合焊盘210、410可以包括在诸如半导体封装布置、衬底(包括但不限于引线框架、电路板等)等的其它类型的电子组件上。键合焊盘210、410和键合接线212、412可以用来在诸如半导体裸片、半导体封装体和衬底(诸如引线框架和电路板)之类的各种电子组件上提供内部连接。键合焊盘210、410和键合接线212、412也可以用来提供诸如半导体裸片、半导体封装体和衬底(诸如引线框架和电路板)的各种电子组件之间的相互连接。
图5是制造键合焊盘210的方法500的例子的流程图。在502处，方法500包括在电子组件上形成焊盘，其中焊盘包括导电材料。在504处，方法500包括在导电材料的表面上提供钝化材料。在506处，方法500进一步包括从表面去除钝化材料以暴露导电材料的部分从而形成包括导电材料和间隔物的键合焊盘。间隔物由保留在导电材料的表面上的钝化材料制成。
图6是用于制造键合焊盘410的方法600的例子的流程图。在602处，方法600包括在电子组件上的一个位置处提供钝化材料，其中钝化材料布置成使电子组件在该位置处的部分暴露的图案。在604处，方法600包括在该位置处的钝化材料上方沉积导电材料以在该位置处提供包括钝化材料的键合焊盘，其中键合焊盘的接触表面为基本上不平滑或不平坦并且限定峰和谷。
本描述可以使用基于透视的描述，诸如上方/下方。这种描述仅用于便于讨论，并不旨在于将这里描述的实施例的应用限制到任何特定方向。
为本公开的目的，用语“A/B”是指A或B。为本公开的目的，用语“A和/或B”是指“(A)、(B)或(A和B)”。为本公开的目的，用语“A、B和C中的至少一个”是指“(A)、(B)、(C)、(A和B)、(A和C)、(B和C)或(A、B和C)”。为本公开的目的，用语“(A)B”是指“(B)或(AB)”，也就是A为可选要素。
按照最有助于理解请求保护的主题的方式，将各种操作又描述为多个分立操作。然而，描述的顺序不应视为隐含这些操作必须是依赖于顺序的。特别地，这些操作可以不按照所呈现的顺序执行。描述的操作可以按照与所述实施例不同的顺序执行。在附加实施例中，可以执行各种附加操作和/或可以省略所描述的操作。
本描述使用用语“在一个实施例中”、“在实施例中”或类似语言，其每个都可以是指相同或不同实施例中的一个或多个。此外，如关于本公开的实施例使用的术语“包括”、“包含”、“具有”等是同义的。
尽管这里图示和描述了特定实施例，但在不脱离本公开精神的情况下，适于实现相同目的的各种各样的备选和/或等同实施例或实施方案可以替代所图示和描述的这些实施例。本公开旨在于涵盖对这里讨论的实施例的任何调整或变型。因此，明显旨在于仅通过权利要求及其等同方案来限制这里描述的实施例。

Claims (8)

1.一种形成键合焊盘的方法，包括：
在电子组件上形成焊盘，其中所述焊盘包括导电材料；
在所述导电材料的表面上提供钝化材料；
选择性地从所述导电材料的所述表面去除所述钝化材料以暴露所述导电材料的部分；以及
在选择性地从所述导电材料的所述表面去除所述钝化材料以暴露所述导电材料的所述部分之后，在所述导电材料的所暴露的部分上沉积多个间隔物，从而形成包括(i)所述导电材料和(ii)所述多个间隔物的键合焊盘；以及
将键合接线耦合到所述键合焊盘上，从而所述键合接线与(i)所述焊盘和(ii)所述多个间隔物物理接触。
2.根据权利要求1所述的方法，其中：
所述多个间隔物包括被沉积在所述焊盘上的材料的图案。
3.根据权利要求2所述的方法，其中所述图案包括如下中的至少一个：(i)直线；以及(ii)曲线，并且其中所述间隔物被直接沉积在所述焊盘的所述导电材料的被暴露的部分的顶表面上。
4.根据权利要求3所述的方法，其中所述图案包括如下中的至少一个：(i)多个方形；以及(ii)多个圆形。
5.根据权利要求3所述的方法，其中所述图案包括如下中的一个：(i)棋盘型图案；(ii)对角线棋盘型图案；(iii)方形内的方形；以及(iv)圆形内的圆形。
6.根据权利要求1所述的方法，其中所述钝化材料包括氮化硅；
所述多个间隔物包括第一间隔物和第二间隔物；
所述多个间隔物包括第一材料；并且
所述第一间隔物与所述第二间隔物分离，从而所述第一间隔物不经由所述第一材料物理连接到所述第二间隔物。
7.根据权利要求1所述的方法，其中在所述电子组件上形成所述焊盘以及在所述导电材料的所述表面上提供所述钝化材料包括：
在所述电子组件的层上提供所述焊盘；以及
在(i)所述焊盘和(ii)所述层上沉积所述钝化材料，以限定所述电子组件的钝化层。
8.根据权利要求1所述的方法，其中在所述电子组件上形成所述焊盘以及在所述导电材料的表面上提供所述钝化材料包括：
在所述电子组件的层上沉积所述钝化材料，以限定所述电子组件的钝化层；
选择性地去除所述钝化材料以露出所述层上用于创建所述焊盘的位置；
在所述位置处沉积所述导电材料；以及
在所述导电材料上沉积钝化材料。
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