CN101083239A - 与铜焊接相容的焊接垫板结构和方法 - Google Patents

与铜焊接相容的焊接垫板结构和方法 Download PDF

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Publication number
CN101083239A
CN101083239A CNA2007101092551A CN200710109255A CN101083239A CN 101083239 A CN101083239 A CN 101083239A CN A2007101092551 A CNA2007101092551 A CN A2007101092551A CN 200710109255 A CN200710109255 A CN 200710109255A CN 101083239 A CN101083239 A CN 101083239A
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passivating material
composition backing
material district
transition buffer
conductive
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CN100517675C (zh
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弗兰克斯·赫尔伯特
安荷·叭剌
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Chongqing Wanguo Semiconductor Technology Co ltd
Alpha and Omega Semiconductor Ltd
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Alpha and Omega Semiconductor Ltd
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Abstract

本发明披露了一种与Cu焊接相容的焊接垫板结构和相应的方法。该器件焊接垫板结构包括一种过渡缓冲结构，由各互连金属区和各不导电钝化材料区构成，该过渡缓冲结构提供了对于下埋各层和器件结构的缓冲隔离。

Description

与铜焊接相容的焊接垫板结构和方法
技术领域
本发明一般涉及将半导体器件焊接到衬底上的焊接垫板结构和方法，特别涉及一种跟铜焊接相容的焊接垫板结构以及一种将铜焊线焊接到半导体器件上而能避免损伤器件包装层和埋在底下的器件结构的方法。
背景技术
常规焊接方法采用Al或者Au焊线将半导体器件连接到诸如铅框这样的衬底上。Al受到具有高电阻的缺点的制约，而Au越来越贵。
Cu焊线被认为是Al和Au焊线的不贵的替代品。Cu不贵、容易得到、而且有低电阻。虽然如此，对Cu焊线的需求却不高。毕竟，Cu焊线比起Al或者Au焊线都来得硬，采用铜提出了一系列挑战性问题是现有技术难以满意解决的。
因为Cu和Cu合金比常规焊线要硬，采用Cu和Cu合金焊线来焊接，可能导致半导体器件的损伤，或者导致构成器件焊接垫板的包装层的损伤。参照图1所示的现有技术的示范性例子，半导体器件100包括含有在其中形成了半导体器件(未显示)的衬底110。衬底110可用Si形成，而半导体器件可包括有功MOSFET。在Al、AlCu、或AlSiCu电极金属层130底下设置TiNi势垒金属层120。可在用氮氧化合物或富硅的氮氧化合物形成的钝化层150上形成图形来构成焊接垫板140。焊接垫板140可包括含MOSFET源极的焊接垫板。
在图2和图3上显示了焊接在焊接垫板140上的Cu焊线200。如图3所示，Cu焊线200已穿进电极金属层130，而且部分穿进势垒金属层120。对势垒金属层120的损伤可导致结漏电和/或器件随时故障。在极端情况下(未显示)，Cu焊线200会完全穿进势垒金属层120，并损伤半导体器件。
为了对付这个问题，现有技术采用很厚的电极金属层130。典型厚度比3微米大得多，通常为6微米。这种技术的缺点在于增多了所用的材料及制造成本，并使得器件互连的各细线的图形的形成极为困难。
所以在技术上就有需要解决跟铜焊接相容的焊接垫板结构和相应的不会损伤势垒金属层或下埋的器件结构的方法。在技术上也有需要解决能实现低接触电阻的焊接垫板结构和相应的方法。在技术上还需要解决不额外增加加工成本的焊接垫板结构和相应方法。
发明内容
本发明提供一种跟铜焊接相容的焊接垫板结构及相应的将Cu焊线缓冲隔离于势垒金属层的方法，从而克服了现有技术的局限性。这种缓冲隔离作用是通过在焊接垫板上形成的过渡缓冲结构来实现的。该过渡缓冲结构包括一些电极金属区和一些用来缓冲隔离Cu焊线并保护势垒金属层的介电钝化材料区。过渡缓冲结构是通过构成图形并且在形成焊接垫板时在介电钝化层上蚀刻来制成的。
按照本发明的一个方面，一种器件焊接垫板包括由一些互连金属区和一些不导电钝化材料区形成的过渡缓冲结构，该过渡缓冲结构提供了对于该器件的下埋各层和结构的缓冲隔离作用。
按照本发明的另一方面，一种制造与Cu焊接相容的焊接垫板结构的方法包括下列步骤：(a)确定过渡缓冲结构的图形，(b)在介电钝化层上形成该过渡缓冲结构图形，以及(c)加工该过渡缓冲结构图形从而在焊接垫板上造成过渡缓冲结构。
按照本发明的还有一方面，一种跟Cu焊接相容的焊接垫板结构包括由一些互连金属区和一些不导电钝化材料区形成的过渡缓冲结构，其中的不导电钝化材料区是由介电钝化层来形成，而互连金属区则是在埋有介电钝化层的电极互连金属层上形成。
以上对本发明的较重要的特征给出了一个相当广泛的提纲，以便后面对本发明的详细描述得到较好理解，也为了让本发明对本技术领域的贡献得到较好赏识。
有鉴于此，在详细解释本发明的至少一个实施例之前，应当理解，本发明并不局限于，如以下描述或图示所表达的，它对设计细节、部件安排、或者加工步骤的应用。本发明还可有另外的实施方案，可用各种方式来实践和执行。也应该理解，这里所用的措词和术语、以及摘要，都是为了描述的目的，而不应看成是限制性的。
所以，本领域的技术人员会赏识，为了实施本发明的各个目标，此处披露所依据的概念很容易用作别的方法和系统的设计基础。于是，重要的是，只要这些等价的方法和系统并不背离本发明的精神和范围，它们都被认为是由本发明的权利要求书所包含的。
附图说明
图1为现有技术焊接垫板截面图；
图2为图1的焊接垫板所带的Cu焊线的顶视图；
图3为图2所示的Cu焊线的截面图；
图4为按照本发明的过渡缓冲结构的顶视图；
图5为按照本发明图4的过渡缓冲结构的截面图；
图6为按照本发明图4的过渡缓冲结构所带的Cu焊线的截面图；
图7为制造按照本发明的过渡缓冲结构的方法的流程图。
具体实施方式
以下详述实施本发明的最佳模式。不应把此叙述看成是局限性的，它只是为了描述本发明的一般原理，因为在后面的权利要求书才最好地确定本发明的范围。
本发明一般地提出了一种跟Cu焊线相容的、隔离缓冲了焊接损伤的焊接垫板结构。在半导体器件表面上沉积并形成的介电钝化层上形成图形的焊接垫板时，就在焊接垫板上形成了过渡缓冲结构。该过渡缓冲结构可包括各电极互连金属区和各不导电钝化材料区，该钝化材料被成形为各种形状：(多)点形、方形、长方形、条形、栅格结构、锯齿形、三角形、波浪形，或者别的形状和结构。
参照图4、图5、图6，一种与Cu焊接相容的焊接垫板结构400包括一个在焊接垫板结构400上形成的过渡缓冲结构410。过渡缓冲结构410包括电极金属层420所暴露的电极金属的各区域415和钝化层460的不导电钝化材料的各区域417。区域417可包括(多)点形、方形、长方形、条形、栅格结构、锯齿形、三角形、波浪形，或者别的形状和结构。电极金属层420可包括一层AlCu或AlSiCu。电极金属层420是形成在TiNi势垒金属层430上的。
在将Cu焊线450焊接到焊接垫板结构400上时，电极金属层420的AlCu或AlSiCu会被Cu焊线450的压力挤压而流往过渡缓冲结构内各处的多个方向上，到了成形的钝化材料各区域417的下面和上面，取决于各区域415和417的结构。有些区域417会被推到电极金属层420的AlCu或AlSiCu内，为Cu焊线450提供了缓冲隔离或衬垫，以保持Cu焊线450不碰到势垒金属层430和半导体器件440。
成形的钝化材料的各区域417和暴露的电极金属的各区域415的图形、宽度、和间隔都可根据焊线的金属和焊接条件而加以优化。此外，各区域415和417的长宽比或图形密度及相关尺寸和形状都可优化以便减小对焊接的接触电阻的影响。更多的成形钝化材料的区域417，相对于暴露的电极金属区域415(即较高的长宽比)，可提供对势垒层和下埋的器件结构更多的保护。较少的区域417，相对于区域415(即较低的长宽比)，可提供较低的接触电阻。此外，将各区域415和417分组也可用来限制钝化层460上的任何应力和移动。
按照本发明制造与Cu焊接相容的焊接垫板结构的方法可包括在焊接垫板400上形成过渡缓冲结构410的图形。参照图7，标示为700的方法包括确定过渡缓冲结构的图形的步骤720。该过渡缓冲结构图形可提供优化的长宽比。然后在步骤730将该过渡缓冲结构图形成形到介电钝化层。最后，在步骤740蚀刻该图形以造成过渡缓冲结构。该过渡缓冲结构包括电极金属层的暴露的电极金属的各区域和不导电钝化材料的各区域。
本发明的优点在提供与Cu焊接相容的焊接垫板结构，它能缓冲隔离Cu焊接对势垒金属层和半导体器件的损伤。该焊接垫板结构可通过成形钝化层图形来造成过渡缓冲结构来得到，这就不需额外的加工成本。该过渡缓冲结构也提供了低的接触电阻。
当然应该理解，上面描述了本发明的较佳实施方案，可对它做各种修改而并不背离如权利要求书所表达的本发明的保护范围。

Claims (20)

1.一种器件焊接垫板结构，其特征在于，包括：
由一些互连金属区和一些不导电钝化材料区形成的过渡缓冲结构，该过渡缓冲结构提供对于下埋各层和器件结构的缓冲隔离。
2.如权利要求1所述的器件焊接垫板结构，其特征在于，其中不导电钝化材料区由介电钝化层形成，而互连金属区则形成在下埋着介电钝化层的电极互连金属层上。
3.如权利要求1所述的器件焊接垫板结构，其特征在于，其中不导电钝化材料区包括多个点形。
4.如权利要求1所述的器件焊接垫板结构，其特征在于，其中不导电钝化材料区包括多个正方形。
5.如权利要求1所述的器件焊接垫板结构，其特征在于，其中不导电钝化材料区包括多个长方形。
6.如权利要求1所述的器件焊接垫板结构，其特征在于，其中不导电钝化材料区包括多个条形。
7.如权利要求1所述的器件焊接垫板结构，其特征在于，其中不导电钝化材料区包括多个栅格结构。
8.如权利要求1所述的器件焊接垫板结构，其特征在于，其中不导电钝化材料区包括多个锯齿形。
9.如权利要求1所述的器件焊接垫板结构，其特征在于，其中不导电钝化材料区包括多个三角形。
10.如权利要求1所述的器件焊接垫板结构，其特征在于，其中不导电钝化材料区包括多个波浪形。
11.一种形成与Cu焊接相容的焊接垫板结构的方法，其特征在于，包括下列步骤：
确定过渡缓冲结构的图形；
成形该过渡缓冲结构图形到介电钝化层上；及
蚀刻该过渡缓冲结构图形以便在焊接垫板上制成过渡缓冲结构。
12.如权利要求11所述的方法，其特征在于，其中确定过渡缓冲结构图形的步骤包括优化其长宽比。
13.如权利要求11所述的方法，其特征在于，其中的过渡缓冲结构包括各互连金属区和各介电钝化材料区。
14.如权利要求13所述的方法，其特征在于，其中各互连金属区形成在下埋着介电钝化层的电极互连金属层上。
15.如权利要求13所述的方法，其特征在于，其中各介电钝化材料区包括多个点形。
16.如权利要求13所述的方法，其特征在于，其中各介电钝化材料区包括多个正方形。
17.如权利要求13所述的方法，其特征在于，其中各介电钝化材料区包括多个条形。
18.一种与Cu焊接相容的焊接垫板结构，其特征在于，包括：
一种过渡缓冲结构由各互连金属区和各不导电钝化材料区构成，其中各不导电钝化材料区由介电钝化层形成，而各互连金属区形成在下埋着介电钝化层的电极互连金属层上。
19.如权利要求18所述的与Cu焊接相容的焊接垫板结构，其特征在于，其中过渡缓冲结构的长宽比经过优化来提供对于包装层和器件结构的缓冲隔离作用，并且提供低的接触电阻。
20.如权利要求18所述的与Cu焊接相容的焊接垫板结构，其特征在于，其中不导电钝化材料区包括下列一组形状的图形：点形、多点形、正方形、长方形、条形、栅格结构、锯齿形、三角形、和波浪形。
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US20120064711A1 (en) 2012-03-15
TW200814886A (en) 2008-03-16
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US20080006951A1 (en) 2008-01-10

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