CN102693922A - 键合焊盘上的钝化材料的图案及其制造方法 - Google Patents
键合焊盘上的钝化材料的图案及其制造方法 Download PDFInfo
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- CN102693922A CN102693922A CN2012100363082A CN201210036308A CN102693922A CN 102693922 A CN102693922 A CN 102693922A CN 2012100363082 A CN2012100363082 A CN 2012100363082A CN 201210036308 A CN201210036308 A CN 201210036308A CN 102693922 A CN102693922 A CN 102693922A
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- pattern
- electronic building
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- bonding
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- 239000000463 material Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000002161 passivation Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title abstract description 3
- 239000004020 conductor Substances 0.000 claims abstract description 43
- 238000003466 welding Methods 0.000 claims description 91
- 239000011469 building brick Substances 0.000 claims description 39
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 4
- 230000000717 retained effect Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 238000012797 qualification Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 239000010949 copper Substances 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 229910000632 Alusil Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 5
- 239000003344 environmental pollutant Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 231100000719 pollutant Toxicity 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161443190P | 2011-02-15 | 2011-02-15 | |
US61/443,190 | 2011-02-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102693922A true CN102693922A (zh) | 2012-09-26 |
CN102693922B CN102693922B (zh) | 2015-06-17 |
Family
ID=46636272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210036308.2A Active CN102693922B (zh) | 2011-02-15 | 2012-02-15 | 键合焊盘上的钝化材料的图案及其制造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8802554B2 (zh) |
CN (1) | CN102693922B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105384140A (zh) * | 2014-08-31 | 2016-03-09 | 天工方案公司 | 电子装置中改进的堆叠结构 |
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US9583425B2 (en) * | 2012-02-15 | 2017-02-28 | Maxim Integrated Products, Inc. | Solder fatigue arrest for wafer level package |
US9837303B2 (en) * | 2012-03-23 | 2017-12-05 | STATS ChipPAC Pte. Ltd. | Semiconductor method and device of forming a fan-out device with PWB vertical interconnect units |
US10049964B2 (en) | 2012-03-23 | 2018-08-14 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming a fan-out PoP device with PWB vertical interconnect units |
US8810024B2 (en) | 2012-03-23 | 2014-08-19 | Stats Chippac Ltd. | Semiconductor method and device of forming a fan-out PoP device with PWB vertical interconnect units |
US9842798B2 (en) | 2012-03-23 | 2017-12-12 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming a PoP device with embedded vertical interconnect units |
KR20160001033A (ko) * | 2014-06-26 | 2016-01-06 | 에스케이하이닉스 주식회사 | 반도체 패키지 |
US9984987B2 (en) * | 2016-08-05 | 2018-05-29 | Nanya Technology Corporation | Semiconductor structure and manufacturing method thereof |
US10710872B2 (en) * | 2016-12-13 | 2020-07-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | MEMS package with roughend interface |
DE102018105462A1 (de) | 2018-03-09 | 2019-09-12 | Infineon Technologies Ag | Halbleitervorrichtung, die ein bondpad und einen bonddraht oder -clip enthält |
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CN105384140A (zh) * | 2014-08-31 | 2016-03-09 | 天工方案公司 | 电子装置中改进的堆叠结构 |
CN105384140B (zh) * | 2014-08-31 | 2021-11-26 | 天工方案公司 | 电子装置中改进的堆叠结构 |
US11257774B2 (en) | 2014-08-31 | 2022-02-22 | Skyworks Solutions, Inc. | Stack structures in electronic devices including passivation layers for distributing compressive force |
US11804460B2 (en) | 2014-08-31 | 2023-10-31 | Skyworks Solutions, Inc. | Devices and methods related to stack structures including passivation layers for distributing compressive force |
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US20120205812A1 (en) | 2012-08-16 |
CN102693922B (zh) | 2015-06-17 |
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