CN102693756B - 半导体存储装置 - Google Patents
半导体存储装置 Download PDFInfo
- Publication number
- CN102693756B CN102693756B CN201110276112.6A CN201110276112A CN102693756B CN 102693756 B CN102693756 B CN 102693756B CN 201110276112 A CN201110276112 A CN 201110276112A CN 102693756 B CN102693756 B CN 102693756B
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- CN
- China
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Memory System (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-066711 | 2011-03-24 | ||
JP2011066711A JP2012203951A (ja) | 2011-03-24 | 2011-03-24 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102693756A CN102693756A (zh) | 2012-09-26 |
CN102693756B true CN102693756B (zh) | 2016-01-06 |
Family
ID=46859133
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110276112.6A Active CN102693756B (zh) | 2011-03-24 | 2011-09-16 | 半导体存储装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8755230B2 (zh) |
JP (1) | JP2012203951A (zh) |
CN (1) | CN102693756B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013206510A (ja) * | 2012-03-29 | 2013-10-07 | Toshiba Corp | 不揮発性半導体記憶装置 |
CN103794253B (zh) * | 2012-10-30 | 2017-02-08 | 北京兆易创新科技股份有限公司 | 一种Nand闪存和读取其配置信息的方法和装置 |
KR102187524B1 (ko) | 2014-02-13 | 2020-12-07 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 이의 동작 방법 |
US9594516B2 (en) * | 2014-02-14 | 2017-03-14 | Sony Semiconductor Solutions Corporation | Memory device with variable trim parameters |
US9934831B2 (en) | 2014-04-07 | 2018-04-03 | Micron Technology, Inc. | Apparatuses and methods for storing and writing multiple parameter codes for memory operating parameters |
US10643700B2 (en) | 2015-10-29 | 2020-05-05 | Micron Technology, Inc. | Apparatuses and methods for adjusting write parameters based on a write count |
US10068651B1 (en) * | 2017-06-13 | 2018-09-04 | Sandisk Technologies Llc | Channel pre-charge to suppress disturb of select gate transistors during erase in memory |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1783339A (zh) * | 2004-10-26 | 2006-06-07 | 因芬尼昂技术股份公司 | 调整ram模块中的工作参数的电路装置和方法 |
CN101740122A (zh) * | 2008-11-19 | 2010-06-16 | 富士通株式会社 | 非易失性半导体存储设备 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4413406B2 (ja) | 2000-10-03 | 2010-02-10 | 株式会社東芝 | 不揮発性半導体メモリ及びそのテスト方法 |
JP2003110034A (ja) | 2001-09-28 | 2003-04-11 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置およびその製造方法 |
US6851018B2 (en) * | 2002-03-27 | 2005-02-01 | Hewlett-Packard Development Company, L.P. | Exchanging operation parameters between a data storage device and a controller |
ITMI20050799A1 (it) * | 2005-05-03 | 2006-11-04 | Atmel Corp | Metodo e sistema di configurazione dei parametri per una memoria flash |
JP4942990B2 (ja) | 2005-12-12 | 2012-05-30 | パナソニック株式会社 | 半導体記憶装置 |
JP4976764B2 (ja) * | 2006-07-05 | 2012-07-18 | 株式会社東芝 | 半導体記憶装置 |
JP2009032313A (ja) | 2007-07-25 | 2009-02-12 | Toshiba Corp | 不揮発性半導体記憶装置及び不揮発性半導体記憶装置のテスト方法 |
JP2009259329A (ja) | 2008-04-16 | 2009-11-05 | Toshiba Corp | 半導体集積回路装置 |
-
2011
- 2011-03-24 JP JP2011066711A patent/JP2012203951A/ja not_active Withdrawn
- 2011-09-16 CN CN201110276112.6A patent/CN102693756B/zh active Active
-
2012
- 2012-01-25 US US13/358,113 patent/US8755230B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1783339A (zh) * | 2004-10-26 | 2006-06-07 | 因芬尼昂技术股份公司 | 调整ram模块中的工作参数的电路装置和方法 |
CN101740122A (zh) * | 2008-11-19 | 2010-06-16 | 富士通株式会社 | 非易失性半导体存储设备 |
Also Published As
Publication number | Publication date |
---|---|
CN102693756A (zh) | 2012-09-26 |
US8755230B2 (en) | 2014-06-17 |
US20120243321A1 (en) | 2012-09-27 |
JP2012203951A (ja) | 2012-10-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170801 Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Toshiba Corp. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Japanese businessman Panjaya Co.,Ltd. Address after: Tokyo, Japan Patentee after: Kaixia Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211013 Address after: Tokyo, Japan Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |