CN102650830B - 正型抗蚀剂组合物、抗蚀图案形成方法 - Google Patents

正型抗蚀剂组合物、抗蚀图案形成方法 Download PDF

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Publication number
CN102650830B
CN102650830B CN201210042952.0A CN201210042952A CN102650830B CN 102650830 B CN102650830 B CN 102650830B CN 201210042952 A CN201210042952 A CN 201210042952A CN 102650830 B CN102650830 B CN 102650830B
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China
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composition
agent composition
corrosion agent
corrosion
mass
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Chinese (zh)
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CN102650830A (zh
Inventor
染谷和也
山口敏弘
青木知三郎
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Tokyo Ohka Kogyo Co Ltd
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Tokyo Ohka Kogyo Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201210042952.0A 2011-02-25 2012-02-23 正型抗蚀剂组合物、抗蚀图案形成方法 Active CN102650830B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-040168 2011-02-25
JP2011040168A JP5674506B2 (ja) 2011-02-25 2011-02-25 ポジ型レジスト組成物、レジストパターン形成方法

Publications (2)

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CN102650830A CN102650830A (zh) 2012-08-29
CN102650830B true CN102650830B (zh) 2016-08-03

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CN201210042952.0A Active CN102650830B (zh) 2011-02-25 2012-02-23 正型抗蚀剂组合物、抗蚀图案形成方法

Country Status (4)

Country Link
JP (1) JP5674506B2 (ko)
KR (1) KR101574830B1 (ko)
CN (1) CN102650830B (ko)
TW (1) TWI502279B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6209035B2 (ja) * 2013-09-25 2017-10-04 旭化成株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法、及び半導体装置の製造方法
JP6302643B2 (ja) 2013-11-08 2018-03-28 東京応化工業株式会社 ポジ型レジスト組成物、及びレジストパターン形成方法、並びに、メタル層からなるパターンの形成方法、及び貫通電極の製造方法
JP6702251B2 (ja) * 2017-04-17 2020-05-27 信越化学工業株式会社 ポジ型レジストフィルム積層体及びパターン形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1603954A (zh) * 2003-09-30 2005-04-06 东京应化工业株式会社 排出喷嘴式涂布法用正型光致抗蚀剂组合物以及抗蚀图案的形成方法
CN101109899A (zh) * 2005-07-19 2008-01-23 大赛璐化学工业株式会社 抗蚀剂组合物

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4209297B2 (ja) * 2003-10-06 2009-01-14 東京応化工業株式会社 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法
CN101501570B (zh) * 2006-08-04 2012-07-25 东友精化股份有限公司 光刻胶组成物及其图案化方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1603954A (zh) * 2003-09-30 2005-04-06 东京应化工业株式会社 排出喷嘴式涂布法用正型光致抗蚀剂组合物以及抗蚀图案的形成方法
CN101109899A (zh) * 2005-07-19 2008-01-23 大赛璐化学工业株式会社 抗蚀剂组合物

Also Published As

Publication number Publication date
JP5674506B2 (ja) 2015-02-25
TWI502279B (zh) 2015-10-01
JP2012177774A (ja) 2012-09-13
KR20120098446A (ko) 2012-09-05
KR101574830B1 (ko) 2015-12-04
TW201248327A (en) 2012-12-01
CN102650830A (zh) 2012-08-29

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