TWI502279B - 正型光阻組成物、光阻圖型形成方法 - Google Patents

正型光阻組成物、光阻圖型形成方法 Download PDF

Info

Publication number
TWI502279B
TWI502279B TW101105100A TW101105100A TWI502279B TW I502279 B TWI502279 B TW I502279B TW 101105100 A TW101105100 A TW 101105100A TW 101105100 A TW101105100 A TW 101105100A TW I502279 B TWI502279 B TW I502279B
Authority
TW
Taiwan
Prior art keywords
component
photoresist
positive
mass
substrate
Prior art date
Application number
TW101105100A
Other languages
English (en)
Chinese (zh)
Other versions
TW201248327A (en
Inventor
Kazuya Someya
Toshihiro Yamaguchi
Tomosaburo Aoki
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW201248327A publication Critical patent/TW201248327A/zh
Application granted granted Critical
Publication of TWI502279B publication Critical patent/TWI502279B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW101105100A 2011-02-25 2012-02-16 正型光阻組成物、光阻圖型形成方法 TWI502279B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011040168A JP5674506B2 (ja) 2011-02-25 2011-02-25 ポジ型レジスト組成物、レジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW201248327A TW201248327A (en) 2012-12-01
TWI502279B true TWI502279B (zh) 2015-10-01

Family

ID=46692854

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101105100A TWI502279B (zh) 2011-02-25 2012-02-16 正型光阻組成物、光阻圖型形成方法

Country Status (4)

Country Link
JP (1) JP5674506B2 (ko)
KR (1) KR101574830B1 (ko)
CN (1) CN102650830B (ko)
TW (1) TWI502279B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6209035B2 (ja) * 2013-09-25 2017-10-04 旭化成株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法、及び半導体装置の製造方法
JP6302643B2 (ja) 2013-11-08 2018-03-28 東京応化工業株式会社 ポジ型レジスト組成物、及びレジストパターン形成方法、並びに、メタル層からなるパターンの形成方法、及び貫通電極の製造方法
JP6702251B2 (ja) * 2017-04-17 2020-05-27 信越化学工業株式会社 ポジ型レジストフィルム積層体及びパターン形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1605939A (zh) * 2003-10-06 2005-04-13 东京应化工业株式会社 排出喷嘴式涂敷法用正型光致抗蚀剂组合物以及抗蚀图案的形成方法
JP2005107130A (ja) * 2003-09-30 2005-04-21 Tokyo Ohka Kogyo Co Ltd 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法
TW200707096A (en) * 2005-07-19 2007-02-16 Daicel Chem Resist composition

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101501570B (zh) * 2006-08-04 2012-07-25 东友精化股份有限公司 光刻胶组成物及其图案化方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005107130A (ja) * 2003-09-30 2005-04-21 Tokyo Ohka Kogyo Co Ltd 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法
CN1605939A (zh) * 2003-10-06 2005-04-13 东京应化工业株式会社 排出喷嘴式涂敷法用正型光致抗蚀剂组合物以及抗蚀图案的形成方法
TW200707096A (en) * 2005-07-19 2007-02-16 Daicel Chem Resist composition

Also Published As

Publication number Publication date
JP5674506B2 (ja) 2015-02-25
JP2012177774A (ja) 2012-09-13
KR20120098446A (ko) 2012-09-05
KR101574830B1 (ko) 2015-12-04
TW201248327A (en) 2012-12-01
CN102650830A (zh) 2012-08-29
CN102650830B (zh) 2016-08-03

Similar Documents

Publication Publication Date Title
KR100685200B1 (ko) 논스핀 도포방식용 포지티브형 포토레지스트 조성물 및 레지스트 패턴의 형성방법
JP4152852B2 (ja) 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法
TWI502279B (zh) 正型光阻組成物、光阻圖型形成方法
JP3996573B2 (ja) ポジ型感光性樹脂組成物
JP4121925B2 (ja) ポジ型ホトレジスト組成物
JP4209297B2 (ja) 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法
JP4156400B2 (ja) ポジ型ホトレジスト組成物及びレジストパターンの形成方法
KR102253191B1 (ko) 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법, 그리고 메탈층으로 이루어지는 패턴의 형성 방법 및 관통 전극의 제조 방법
JP2006522354A (ja) フォトレジスト組成物
TWI409586B (zh) 液晶元件製造用正型光阻組成物及光阻圖型之形成方法
JP4405293B2 (ja) 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法
KR100636568B1 (ko) 토출노즐식 도포법용 포지티브형 포토레지스트 조성물 및레지스트 패턴의 형성방법
JP4112416B2 (ja) 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法
JP3640638B2 (ja) 液晶表示素子製造用レジストパターンの形成方法
JP3789926B2 (ja) ポジ型ホトレジスト組成物