CN102569566B - Method for vertical packaging of gallium nitride-based LED (Light Emitting Diode) chip - Google Patents
Method for vertical packaging of gallium nitride-based LED (Light Emitting Diode) chip Download PDFInfo
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- CN102569566B CN102569566B CN201210060166.3A CN201210060166A CN102569566B CN 102569566 B CN102569566 B CN 102569566B CN 201210060166 A CN201210060166 A CN 201210060166A CN 102569566 B CN102569566 B CN 102569566B
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Abstract
The invention discloses a method for vertical packaging of a gallium nitride-based LED (Light Emitting Diode) chip. The method specifically comprises the following steps of: ultrasonically cleaning a power type LED bracket and drying; coating a photo-resist layer in the center of the surface of the power type LED bracket, wherein the size of the area of the coated photo-resist is the same as that of the area of the LED chip; fixing the LED chip at a position where the photo-resist is coated by using a die bonder and then placing in a drying oven to dry so as to fix the LED chip on the bracket; connecting an electrode of the LED chip to the LED bracket by using a metal wire; immersing the LED chip and the LED bracket together to separate the LED chip with the metal wire formed through wire bonding from the LED bracket; coating silver paste on the power type LED bracket, then vertically fixing the LED chip on the LED bracket and keeping the side face of the LED chip in contact with the LED bracket; coating florescent powder on the surface of the vertical LED chip; covering a lens above the LED chip; and filling silica gel in the lens and curing to finish the preparation of the LED chip vertical package. The extraction efficiency of an LED device is increased; and meanwhile, the far field distribution is also greatly improved.
Description
Technical field
The invention belongs to technical field of semiconductors, refer to especially the method for the vertical encapsulation of a kind of galliumnitride base LED chip.
Background technology
Because LED has energy-saving and environmental protection, the advantages such as life-span length, after the coming years, LED likely replaces the traditional lighting light fixtures such as incandescent lamp, fluorescent lamp, and enters huge numbers of families.The method for packing of LED is mainly paster type encapsulation at present, and LED chip level is attached on support.This method for packing makes the light that sends active area can only be from positive outgoing, this has just increased the probability that light is absorbed by metal electrode, and the light being limited in LED chip can carry out back reflective in the interface of gallium nitride material and outside air, thereby being nitrided gallium material absorbs, greatly affect the extraction efficiency of device, also can have influence on the reliability of device simultaneously.This method for packing also can affect the far-field distribution of LED light source greatly simultaneously, thereby restriction LED is in the application of the aspects such as backlight.Chih-chien pan, the people such as Goleta are called in name in " light emitting diode packaging method with high light extraction and heat dissipation using a transparent vertical stand structure (US20110103077A1) " patent and mention, and use zinc oxide as the method for the vertical encapsulation of lateral support thing.The present invention, not by any supplemental support object, has realized the vertical encapsulation of galliumnitride base LED chip.Packaging efficiency is improved greatly, and packaging technology is simplified, and is conducive to the universal and development of semiconductor lighting.
Summary of the invention
The object of the present invention is to provide the method for the vertical encapsulation of a kind of galliumnitride base LED chip, its can make light that LED chip active area sends can from chip just, back side outgoing, greatly improve the extraction efficiency of LED device, also greatly improved its far-field distribution simultaneously.
The method that the invention provides the vertical encapsulation of a kind of galliumnitride base LED chip, concrete steps comprise:
Step 1: Ultrasonic Cleaning power-type LED support, dry;
Step 2: the center at power-type LED rack surface applies one deck photoresist, and the area that photoresist applies is identical with LED chip size;
Step 3: with die bond machine, LED chip is fixed on to the position that photoresist applies, then puts into baking oven baking, LED chip is fixed on support;
Step 4: the electrode of LED chip is connected with LED support with gold thread;
Step 5: LED chip is soaked together with LED support, and the LED chip that makes to accomplish fluently gold thread is separated with LED support;
Step 6: silver slurry is coated on power-type LED support, then LED chip is erected to be fixed on LED support, with LED chip contacts side surfaces LED support;
Step 7: at the surface-coated fluorescent material of the LED chip of erectting;
Step 8: cover lens above above LED chip;
Step 9: filling gel in lens, and solidify, complete the preparation of the vertical encapsulation of LED chip.
Accompanying drawing explanation
For making auditor can further understand structure of the present invention, feature and object thereof, below in conjunction with being described in detail as follows of accompanying drawing and preferred embodiment, wherein:
Fig. 1 is vertical encapsulating structure schematic diagram;
Embodiment
Refer to shown in Fig. 1, the method for the vertical encapsulation of a kind of galliumnitride base LED chip of the present invention, concrete steps comprise:
Step 1: Ultrasonic Cleaning power-type LED support 2, to dry, the time of this Ultrasonic Cleaning is 4-6 minute, the cleaning fluid of this Ultrasonic Cleaning power-type LED support 2 is absolute ethyl alcohol or acetone soln; Cleaning power-type LED support 2 is for next step technique, and photoresist and LED chip easily solidify.
Step 2: the center on power-type LED support 2 surfaces applies one deck photoresist, and the area that photoresist applies is identical with LED chip size; Photoresist surface covered is difficult for too many, can affect too much the connection of gold thread 4 and power-type LED support 2.
Step 3: with die bond machine, LED chip 3 is fixed on to the position that photoresist applies, then puts into baking oven baking, LED chip 3 is fixed on support, the temperature of described baking is 90-110 degree, and baking time is 18-22 minute;
Step 4: the electrode of LED chip 3 is connected with power-type LED support 2 with gold thread 4, the quantity of this LED chip 3 is one or is array structure, and described array structure comprises triangle, square, rectangle, parallelogram or rhombus;
Step 5: LED chip 3 is soaked together with LED support 2, make LED chip 3 separated with power-type LED support 2, the solution of described immersion is the acetone soln of heating, and the time of immersion is 2-5 minute;
Step 6: silver slurry is coated on power-type LED support 2, then LED chip 3 is erected to be fixed on LED support 2, with LED chip 3 contacts side surfaces LED supports 2;
Step 7: at the surface-coated fluorescent material of the LED chip 3 of erectting; After applying fluorescent material, can send gold-tinted, green glow and white light.
Step 8: cover lens 6 above above LED chip 3, the material of described lens 6 is glass or silica gel, lens 6 be shaped as hemisphere, semielliptical or bat type;
Step 9: at the interior filling gel 5 of lens 6, and solidify, the curing time is 28-32 minute, completes the preparation of the vertical encapsulation of LED chip.
Example
As shown in Figure 1, the invention provides the method for the vertical encapsulation of a kind of galliumnitride base LED chip, concrete steps comprise:
Step 1: Ultrasonic Cleaning power-type LED support 2, dry, wherein the time of Ultrasonic Cleaning is 5 minutes, and the cleaning fluid that wherein cleans power-type LED support 2 is absolute ethyl alcohol or acetone soln, and the temperature of described baking is 100 degree, and baking time is 20 minutes;
Step 2: the center on power-type LED support 2 surfaces applies one deck photoresist, and the area that photoresist applies is identical with LED chip size, and the quantity of this LED chip 3 is one;
Step 3: with die bond machine, LED chip 3 is fixed on to the position that photoresist applies, then puts into baking oven baking, LED chip 3 is fixed on support;
Step 4: the electrode of LED chip 3 is connected with LED support 2 with gold thread 4;
Step 5: LED chip 3 is soaked together with LED support 2, and the LED chip 3 that makes to accomplish fluently gold thread 4 is separated with LED support 2, the solution of described immersion is the acetone soln of heating, the time of immersion is 4 minutes;
Step 6: silver slurry is coated on power-type LED support 2, then LED chip 3 is erected to be fixed on LED support 2, with LED chip 3 contacts side surfaces LED supports 2;
Step 7: at the surface-coated fluorescent material of the LED chip 3 of erectting;
Step 8: cover lens 6 above above LED chip 3, the material of described lens 6 is glass or silica gel, lens 6 be shaped as hemisphere, semielliptical or bat type;
Step 9: at the interior filling gel 5 of lens 6, and solidify, wherein the curing time is 30 minutes, completes the preparation of the vertical encapsulation of LED chip.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (9)
1. a method for the vertical encapsulation of galliumnitride base LED chip, concrete steps comprise:
Step 1: Ultrasonic Cleaning power-type LED support, dry;
Step 2: the center at power-type LED rack surface applies one deck photoresist, and the area that photoresist applies is identical with LED chip size;
Step 3: with die bond machine, LED chip is fixed on to the position that photoresist applies, then puts into baking oven baking, LED chip is fixed on support;
Step 4: the electrode of LED chip is connected with LED support with gold thread;
Step 5: LED chip is soaked together with LED support, and the LED chip that makes to accomplish fluently gold thread is separated with LED support;
Step 6: silver slurry is coated on power-type LED support, then LED chip is erected to be fixed on LED support, with LED chip contacts side surfaces LED support;
Step 7: at the surface-coated fluorescent material of the LED chip of erectting;
Step 8: cover lens above above LED chip;
Step 9: filling gel in lens, and solidify, complete the preparation of the vertical encapsulation of LED chip.
2. the method for the vertical encapsulation of galliumnitride base LED chip according to claim 1, wherein the time of Ultrasonic Cleaning is 4-6 minute.
3. the method for the vertical encapsulation of galliumnitride base LED chip according to claim 1, the cleaning fluid that wherein cleans power-type LED support is absolute ethyl alcohol or acetone soln.
4. the method for the vertical encapsulation of galliumnitride base LED chip according to claim 1, wherein the temperature of baking is 90-110 degree, baking time is 18-22 minute.
5. the method for the vertical encapsulation of galliumnitride base LED chip according to claim 1, the solution wherein soaking is the acetone soln of heating, the time of immersion is 2-5 minute.
6. the method for the vertical encapsulation of galliumnitride base LED chip according to claim 1, wherein the quantity of this LED chip is one.
7. the method for the vertical encapsulation of galliumnitride base LED chip according to claim 1, wherein this LED chip is array structure, described array structure comprises triangle, square, rectangle, parallelogram or rhombus.
8. the method for the vertical encapsulation of galliumnitride base LED chip according to claim 1, wherein the material of lens is glass or silica gel, lens be shaped as hemisphere, semielliptical or bat type.
9. the method for the vertical encapsulation of galliumnitride base LED chip according to claim 1, wherein the curing time is 28-32 minute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210060166.3A CN102569566B (en) | 2012-03-09 | 2012-03-09 | Method for vertical packaging of gallium nitride-based LED (Light Emitting Diode) chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210060166.3A CN102569566B (en) | 2012-03-09 | 2012-03-09 | Method for vertical packaging of gallium nitride-based LED (Light Emitting Diode) chip |
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| CN102569566A CN102569566A (en) | 2012-07-11 |
| CN102569566B true CN102569566B (en) | 2014-09-17 |
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| CN201210060166.3A Active CN102569566B (en) | 2012-03-09 | 2012-03-09 | Method for vertical packaging of gallium nitride-based LED (Light Emitting Diode) chip |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101425554A (en) * | 2007-10-30 | 2009-05-06 | 叶秀慧 | Package construction having vertical LED and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110103077A1 (en) * | 2009-11-04 | 2011-05-05 | The Regents Of The University Of California | Light emitting diode packaging method with high light extraction and heat dissipation using a transparent vertical stand structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101425554A (en) * | 2007-10-30 | 2009-05-06 | 叶秀慧 | Package construction having vertical LED and manufacturing method thereof |
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