CN101425554A - Package construction having vertical LED and manufacturing method thereof - Google Patents
Package construction having vertical LED and manufacturing method thereof Download PDFInfo
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- CN101425554A CN101425554A CNA2007101643713A CN200710164371A CN101425554A CN 101425554 A CN101425554 A CN 101425554A CN A2007101643713 A CNA2007101643713 A CN A2007101643713A CN 200710164371 A CN200710164371 A CN 200710164371A CN 101425554 A CN101425554 A CN 101425554A
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Abstract
The invention discloses an encapsulation structure provided with a vertical light emitting diode, which comprises a carrier plate, a light emitting diode with an N electrode and a P electrode arranged at both sides of a semiconductor layer with the luminous function, a first transparent carrier plate, a second transparent carrier plate and a plurality of electrical connection components. The carrier is provided with a first surface and a second surface, a plurality of holes penetrating through the first surface and the second surface are arranged on the carrier plate, and each hole is filled with conducting material; a metal layer is arranged on the first transparent carrier plate and is electrically connected with the N electrode of the light emitting diode and the conducting material on the first surface of the carrier plate; another metal layer is arranged on the second transparent carrier plate and is electrically connected with the P electrode of the light emitting diode and the conducting material on the first surface of the carrier plate; and the electrical connection components are electrically connected with a plurality of conducting materials on the second surface of the carrier plate. The encapsulation structure provided with the vertical light emitting diode ensures that the part of the light emitting diode shaded by the electrode is reduced, thereby higher luminous efficiency can be achieved.
Description
Technical field
The present invention relates generally to a kind of encapsulating structure of light-emitting diode, relates more particularly to light-emitting diode is erect to form the vertically structure of encapsulation of light-emitting diode.
Background technology
(Light emitting diode LED) is a kind of light-emitting component that electric energy directly can be converted to luminous energy to light-emitting diode, owing to do not need via the hot cook-off photoreduction process that converts electric energy to heat energy.Therefore be also referred to as the chemiluminescence element.Light-emitting diode also is a kind of small solid state light emitter (solid state illuminator) except having high-luminous-efficiency, can be made into the semiconductor chip form, has semiconductor p-n junction face structure.Apply voltage at the two ends of this p-n junction face with after feeding electric current, it is moving to this p-n junction surface current to produce electronics and electric hole immediately, and combination and discharge photon.
With regard to the brightness aspect of light-emitting diode, it is generally acknowledged the light-emitting diode of present stage, it is technical to have possessed the efficient of cold cathode fluorescent lamp about half, even its luminous efficiency can be run neck and neck with cold cathode fluorescent lamp, the luminous efficiency of light-emitting diode is main relevant with following two kinds of factors: one is the luminous efficiency of semiconductor chip itself, and another is the light extraction efficiency after semiconductor die package is finished.Main developing direction about the semiconductor chip luminous efficiency is: the research and development of electroluminescent material and the crystalline research of raising semiconductor chip, and to increase the quantum efficiency of semiconductor chip inside.
For the light extraction efficiency of package structure for LED, because the light major part that semiconductor chip produced is all got back to semiconductor chip inside because of the interface total reflection, therefore the light major part of total reflection is got back to semiconductor chip inside because of the interface total reflection, and the light of total reflection is then absorbed by luminescent layer itself and electrode, substrate.Therefore, outside light extraction efficiency to semiconductor chip is far below the quantum efficiency of semiconductor chip inside.
In view of this, though light-emitting diode has had the benefit of energy cost far below traditional incandescent lamp or fluorescent lamp, and has the light and handy advantage of size, these are conventional light source advantages can't be obtained, but how further to improve the light extraction efficiency of light-emitting diode or its encapsulating structure, so that the quantum efficiency of the semiconductor chip inside of light-emitting diode reaches higher service efficiency, be the primary developing goal of current techniques.
Summary of the invention
In view of above problem, main purpose of the present invention is to provide a kind of encapsulating structure with vertical LED, makes light-emitting diode be reduced by the part that electrode covers, and therefore can reach higher luminous efficiency.
Another object of the present invention is to provide a kind of encapsulating structure of light supply apparatus.
Another object of the present invention is to provide a kind of light emitter diode seal method, because being holded up, the light-emitting diode of approximate sandwich structure of the present invention encapsulates, the light-emitting area of light-emitting diode is reduced by the place that electrode covers, can increase light extraction efficiency thus.
The transparent support plate that another object of the present invention is to provide can be made simultaneously with light-emitting diode, can shorten the time of LED package.
After a further object of the present invention the support plate that provides is provided and light-emitting diode is electrically connected, can cut, can under the situation that does not increase manufacturing time, finish customized demand according to customer demand.
Another purpose of the present invention is to provide one by the formed backlight module of a plurality of light-emitting diodes, with the direct-light-type backlight as liquid crystal indicator.
According to an aspect of the present invention, a kind of encapsulating structure with vertical LED is provided, has comprised: support plate, it has first surface and second surface, dispose a plurality of holes that run through first surface and second surface on the support plate, and each this hole is filled up by electric conducting material; Has the light-emitting diode that disposes N electrode and P electrode on the dual-side of semiconductor layer of lighting function; The first transparent support plate, configuration metal level on it, the electric conducting material on the N electrode of this metal level and light-emitting diode and the first surface of support plate is electrically connected; The second transparent support plate, configuration metal level on it, another electric conducting material on the P electrode of metal level and this light-emitting diode and the first surface of support plate is electrically connected; And a plurality of electrical connecting elements, it is electrically connected with a plurality of electric conducting materials on the second surface of support plate.
For foregoing of the present invention can be become apparent, preferred embodiment cited below particularly, and in conjunction with appended accompanying drawing, be described in detail below.
Description of drawings
Fig. 1 is a kind of generalized section of light emitting diode construction;
Fig. 2 is a kind of partial cutaway schematic that is electrically connected support plate;
Fig. 3 A for according to the present invention disclosed transparent support plate and be disposed at metal level on the support plate on look schematic diagram;
Fig. 3 B is the generalized section of Fig. 3 A;
Fig. 4 A is the generalized section that the formation disclosed according to the present invention is similar to the sandwich encapsulating structure;
Fig. 4 B is the generalized section through the single approximate sandwich light-emitting diode after the cutting of Fig. 4 A;
Fig. 5 A is for looking schematic diagram on the support plate disclosed according to the present invention;
Fig. 5 B is the generalized section of Fig. 5 A;
Fig. 6 A is the generalized section that the approximate sandwich light-emitting diode disclosed according to the present invention is electrically connected with support plate;
Fig. 6 B finishes generalized section behind the electrical connecting element for Fig. 6 A;
Fig. 7 is the single approximate sandwich light-emitting diode disclosed according to the present invention and the generalized section of snoot structure; And
Fig. 8 is a plurality of approximate sandwich light-emitting diode disclosed according to the present invention and the generalized section of snoot structure.
Embodiment
What the present invention was disclosed is a kind of LED package element, this LED package element can produce higher luminosity and have preferable luminous efficiency, and technology is more simpler than the mode that encapsulates in the known technology, therefore can save the technology cost than known technology.Wherein Fig. 1 to Fig. 8 is each step of the disclosed LED package element of the present invention and the schematic diagram of structure.
With reference to Fig. 1, it represents the structure cutaway view of a kind of light-emitting diode (LED), and light-emitting diode 20 has substrate 201, be formed on of heap of stone brilliant stack architecture layer 203 on the substrate 201, be formed on the transparency conducting layer 205 on the brilliant stack architecture layer 203 of heap of stone, the electrode 209 that is formed on the electrode 207 on the transparency conducting layer 205 and is arranged on the below of substrate 201.To emphasize at this, the present invention discloses the encapsulating structure of a kind of LED, therefore do not limit LED and be glow, the light of green glow, blue light, white light or other color, so long as meet LED structure shown in Figure 1, be protection scope of the present invention.In addition,, on electrode 207 and electrode 209, can optionally dispose opening,, increase luminosity so that the light of light-emitting diode 20 can be penetrated in order to improve the light extraction efficiency of light-emitting diode 20.
Then, with reference to Fig. 2, it is the employed support plate 10 of LED package of the present invention.As shown in Figure 2, support plate 10 has upper surface and lower surface, and has a plurality of holes 12 that run through upper surface and lower surface to be distributed in wherein, and these holes 12 can use the micro-drilling mode to form.Then, use electroplating technology each perforated holes 12 near, to form electrodeposited coating 121/122, then,, make and all fill up scolding tin in each perforated holes 12 again with support plate 10 mistake tin stoves.Will emphasize that at this electrodeposited coating 121/122 of the present invention forms a part that prolongs on the dual-side that is positioned at support plate 10 upper surfaces and lower surface of perforated holes 12, the prolongation electrodeposited coating 121 that wherein is positioned at support plate 10 upper surfaces can be used as the reflector of light-emitting diode; And the electrical connection of the prolongation electrodeposited coating 122 that is positioned at support plate 10 lower surfaces when can be used as a plurality of LED package, the interface that it can also connect as radiating fin.Because the forming process of above-mentioned support plate 10 and general circuit board manufacture process are similar, so its detailed process no longer is described in detail.
Then, with reference to Fig. 3 A and Fig. 3 B, it is top view and the corresponding cutaway view thereof that is used for the employed transparent support plate of encapsulation LED of the present invention.At first with reference to Fig. 3 A, dispose a plurality of independent and big or small identical metal levels on the transparent support plate 30/32, its generation type comprises: earlier metal level is formed on the transparent support plate 30/32; Be coated with photoresist layer then on the metal level and, remove the metal level of part with etching mode through after the light shield exposure and developing; Then, remove after the photoresist layer, can on transparent support plate 30/32, form the identical and separate metal level 300 of a plurality of sizes.In addition, metal level 300 is of a size of and is slightly larger than light-emitting diode chip for backlight unit 20.
In addition, the above-mentioned mode that forms metal level 300 at transparent support plate 30/32 also can comprise: earlier photoresist layer is coated on the transparent support plate 30/32, then through after the light shield exposure and developing, on photoresist layer, form groove or irrigation canals and ditches, metal material is inserted in groove or the irrigation canals and ditches again, after again photoresistance being removed at last, can on transparent support plate 30/32, form the identical and separate metal level 300 of a plurality of sizes.Be noted that on each metal level 300 at this and can optionally dispose opening 302, so that corresponding with the opening on the electrode 209 with the electrode 207 of light-emitting diode chip for backlight unit 20.In addition, the generation type of the metal material that the present invention is above-mentioned can be evaporation (evaporating process) or sputter (sputteringprocess), and in a preferred embodiment of the invention, it uses (plating) mode of plating to form.
Then, with reference to Fig. 4 A, it is the stack architecture of the light-emitting diode of the approximate sandwich structure of formation of the present invention.At first, the light-emitting diode chip for backlight unit 20 that semiconductor technology has also cut into many crystal grain will be finished, pass through tool for transmitting, for example a kind of fetching device (pickand place), and the electrode on every light-emitting diode 20 209 is pasted on the metal level 300 on the transparent support plate 32 by the conducting resinl (not shown), and electrode 209 on the light-emitting diode 20 is formed with metal level 300 on the transparent support plate 32 be electrically connected; And in the present embodiment, conducting resinl is a kind of tin cream.Then, through a suitable Alignment Process (alignment), transparent support plate 30 is pasted on the other end electrode 207 on every light-emitting diode 20, similarly, also (for example: tin cream) metal level 300 on other end electrode 207 and the transparent support plate 30 on the light-emitting diode 20 is formed and be electrically connected, shown in Fig. 4 A by conducting resinl.
Because therefore the metal level 300 on the transparent support plate 30/32, when the line of cut 101 in Fig. 4 A cuts, can remove the metal level 300 on the partially transparent support plate 30/32 greater than the electrode 207/209 of light-emitting diode 20; Therefore, after the cutting of finishing transparent support plate 30/32, can form the light-emitting diode 20 of a plurality of approximate sandwich structures, and on the dual-side of the light-emitting diode 20 of each approximate sandwich structure, the metal level 300 that exposes to the open air all be arranged, shown in Fig. 4 B.
Then, with reference to Fig. 5 A figure and Fig. 5 B, look and generalized section on the support plate of a kind of Fig. 2 of having structure of its expression.Shown in Fig. 5 A, support plate 10 has first surface and second surface, dispose on it a plurality of in pairs and run through the hole 12 of first surface and second surface, and each hole 12 by electric conducting material (for example: scolding tin) fill up, to form electric connection point 110, and being positioned on first surface and the second surface two ends of each hole 12 all has the electrodeposited coating 121/122 of prolongation.Then, with the exposed ends of the metal level 300 of the light-emitting diode 20 of each approximate sandwich structure, (for example: tin cream) be electrically connected to paired electric connection point 110 on the support plate 10, as shown in Figure 6A with conducting resinl.Clearly, the light-emitting diode 20 of each the approximate sandwich structure among Fig. 6 A is electrically connected with electric connection point on the support plate 10 after coming being holded up again.Then, on the electric connection point on the second surface of support plate 10, form a plurality of electrical connecting elements 40, for example: metal coupling (solder bump) or metal lead wire (lead), shown in Fig. 6 B.
When electrical connecting element 40 was connected with power supply, light-emitting diode 20 can produce light, the transparent support plate 30/32 of its penetrable left and right sides of light source and reach luminous purpose.Encapsulated because the light-emitting diode 20 of approximate sandwich structure of the present invention holds up, the light-emitting area of light-emitting diode 20 is reduced by the place that electrode covers, can increase light extraction efficiency thus.
Next, (sawing) is preceding cutting, and encapsulation process of the present invention can cut into separately independently packaging body with the light-emitting diode 20 that is similar to sandwich structure according to user's demand; Certainly, also can cut into the packaging body of being formed by the light-emitting diode 20 of a plurality of approximate sandwich structures, at this moment, electric connection point on the support plate 10 also will cooperate the connection of carrying out necessity, so that the light-emitting diode 20 of a plurality of approximate sandwich structures can be luminous uniformly, but this connected mode is not a feature of the present invention, therefore no longer describes in detail.In addition; be stressed that; in an embodiment of the present invention; because the main part of light-emitting diode 20 has been packaged into the structure of approximate sandwich by transparent support plate 30/32; therefore; after the light-emitting diode 20 of approximate sandwich structure was cut, it can not need to protect with other resin material again, just can reach luminous function.
Yet, can send the light of high brightness for the light-emitting diode 20 that makes approximate sandwich structure, in a preferred embodiment of the invention, be chosen in the light-emitting diode 20 outer snoots 50 of adding of approximate sandwich structure, and in the part configuration reflector of snoot 50 inboards (not shown), so that cooperate the prolongation electrodeposited coating 121 of the first surface of support plate 10 to form preferred light reflection path, to increase luminous efficiency.Be noted that, the step that adds snoot 50 in the present invention, can be as the manufacture of traditional light-emitting diode, after promptly earlier each light-emitting diode being cut into independent individual, add snoot more one by one, and the mode that adds snoot can use deadlocked mode to bind, and also can use fixture chimeric, and the present invention is not limited; Simultaneously, the present invention is for the also not restriction of material of snoot 50, for example: plastic material.In addition, in an embodiment of the present invention, can be after the structure of finishing Fig. 6 B, with regard to the bonding of carrying out snoot 50 earlier or chimeric, make the light-emitting diode 20 of each approximate sandwich structure be coated, as shown in Figure 7 by snoot 50.Clearly, this mode can avoid the light-emitting diode 20 of approximate sandwich structure contaminated, simultaneously also can be by the part configuration reflector (not shown) of snoot 50 inboards, and cooperate the prolongation electrodeposited coating 121 of the first surface of support plate 10 to form preferable light reflection path, to increase luminous efficiency.
When snoot 50 to bind or after chimeric mode coated the light-emitting diode 20 of each approximate sandwich structure, wherein Fig. 7 showed a kind of encapsulating structure of light-emitting diode 20 of single approximate sandwich structure; And Fig. 8 shows a kind of encapsulating structure of light-emitting diode 20 of many approximate sandwich structures.At last, cut, just can finish of the present invention encapsulating structure according to the position of line of cut 101.Be noted that at this snoot 50 can make hemisphere, as shown in Figure 7 and Figure 8; Yet snoot 50 also can be made other geometry, particularly at the light-emitting diode 20 of a plurality of approximate sandwich structures of encapsulation with as lighting source or back light the time, it also can be made into the structure of plane formula.
Clearly, when the present invention's encapsulating structure shown in Figure 8 is connected with supply unit, it can form a kind of backlight module of straight-down negative, therefore when backlight module of the present invention is connected with the liquid crystal panel (not shown), promptly can be used as the backlight module of liquid crystal indicator, LCD TV or 3C Product display screen.At this moment, can select to use the snoot 50 of plane to reduce the thickness of backlight module.In addition, when the light-emitting diode 20 of a plurality of approximate sandwich structures in the encapsulating structure shown in Figure 8 was made up of at least one red light-emitting diode, at least one green light LED and at least one blue light-emitting diode, it can form a lighting source.
Though the present invention discloses as above with aforesaid preferred embodiment; yet it is not in order to limit the present invention; for the person of ordinary skill of the art; under the situation that does not break away from the spirit and scope of the present invention; should do some changes and modification, so protection scope of the present invention should be with appended being as the criterion that claim was limited subsequently.
The primary clustering symbol description
10 support plates, 101 lines of cut
110 electric connection points are to 12 perforated holes
121 upper surfaces prolong electrodeposited coating 122 lower surfaces and prolong electrodeposited coating
20 LED crystal particles, 201 substrates
203 brilliant stack architecture 205 transparency conducting layers of heap of stone
209 times electricity layers of 207 top electrodes
30/32 transparent support plate 300 metal levels
302 metal level openings, 40 electrical connecting elements
50 snoots
Claims (10)
1. the encapsulating structure of a light-emitting diode comprises:
Support plate, it has first surface and second surface, dispose a plurality of holes that run through described first surface and described second surface on it, and each described hole is filled up by electric conducting material;
Light-emitting diode, it has on the dual-side of semiconductor layer of lighting function and disposes N electrode and P electrode;
The first transparent support plate, configuration metal level on it, the electric conducting material on the N electrode of described metal level and described light-emitting diode and the first surface of described support plate is electrically connected;
The second transparent support plate, configuration metal level on it, another electric conducting material on the P electrode of described metal level and described light-emitting diode and the first surface of described support plate is electrically connected; And
A plurality of electrical connecting elements, it is electrically connected with described electric conducting material on the described second surface of described support plate.
2. the encapsulating structure of a light-emitting diode comprises:
Support plate, it has first surface and second surface, dispose a plurality of holes that run through described first surface and described second surface on it, and each described hole is filled up by electric conducting material;
Light-emitting diode, it has on the dual-side of semiconductor layer of lighting function and disposes N electrode and P electrode;
The first transparent support plate, configuration metal level on it, the electric conducting material on the N electrode of described metal level and described optical diode and the first surface of described support plate is electrically connected;
The second transparent support plate, configuration metal level on it, another electric conducting material on the P electrode of described metal level and described optical diode and the first surface of described support plate is electrically connected;
A plurality of electrical connecting elements, it is electrically connected with described electric conducting material on the described second surface of described support plate; And
Snoot is in order to the first surface that coats described support plate, described light-emitting diode, the described first transparent support plate and the described second transparent support plate.
3. the encapsulating structure of a light supply apparatus comprises:
Support plate, it has first surface and second surface, dispose on it a plurality of in pairs and run through the hole of described first surface and described second surface, and each described hole is filled up by electric conducting material;
A plurality of light-emitting diodes are electrically connected with a plurality of paired electric conducting material on the described support plate; And
A plurality of electrical connecting elements, it is electrically connected with described electric conducting material on the described second surface of described support plate; Wherein
Each described light-emitting diode structure comprises:
N electrode and P electrode, it is configured on the dual-side of the semiconductor layer with lighting function;
The first transparent support plate, configuration metal level on it, the electric conducting material on the N electrode of described metal level and described light-emitting diode and the first surface of described support plate is electrically connected; And
The second transparent support plate, configuration metal level on it, the electric conducting material on the P electrode of described metal level and described light-emitting diode and the first surface of described support plate is electrically connected.
4. encapsulating structure according to claim 3, wherein, described a plurality of light-emitting diodes are made up of red light-emitting diode, green light LED and blue light-emitting diode.
5. the encapsulating structure of a light supply apparatus comprises:
Support plate, it has first surface and second surface, dispose on it a plurality of in pairs and run through the hole of described first surface and described second surface, and each described hole is filled up by electric conducting material;
A plurality of light-emitting diodes are electrically connected with a plurality of paired electric conducting material on the described support plate;
A plurality of electrical connecting elements, it is electrically connected with described electric conducting material on the described second surface of described support plate; And
Snoot is in order to the first surface that coats described support plate, described light-emitting diode, the described first transparent support plate and the described second transparent support plate; Wherein
Each described light-emitting diode structure comprises:
N electrode and P electrode, it is configured on the dual-side of the semiconductor layer with lighting function;
The first transparent support plate, configuration metal level on it, the electric conducting material on the N electrode of described metal level and described light-emitting diode and the first surface of described support plate is electrically connected; And
The second transparent support plate, configuration metal level on it, the electric conducting material on the P electrode of described metal level and described light-emitting diode and the first surface of described support plate is electrically connected.
6. encapsulating structure according to claim 5 wherein, all disposes the prolongation of described electric conducting material near around the described first surface of described support plate and the hole of described second surface.
7. a backlight module is made up of planar light source device and supply unit at least, it is characterized in that:
The structure of described planar light source device comprises:
Support plate, it has first surface and second surface, dispose on it a plurality of in pairs and run through the hole of described first surface and described second surface, and each described hole is filled up by electric conducting material;
A plurality of light-emitting diodes are electrically connected with a plurality of paired electric conducting material on the described support plate;
A plurality of electrical connecting elements are electrically connected with described electric conducting material on the described second surface of described support plate; And
Snoot is in order to the first surface that coats described support plate, described light-emitting diode, the described first transparent support plate and the described second transparent support plate; Wherein:
Each described light-emitting diode structure comprises:
N electrode and P electrode, it is configured on the dual-side of the semiconductor layer with lighting function;
The first transparent support plate, configuration metal level on it, the electric conducting material on the N electrode of described metal level and described light-emitting diode and the first surface of described support plate is electrically connected; And
The second transparent support plate, configuration metal level on it, the electric conducting material on the P electrode of described metal level and described light-emitting diode and the first surface of described support plate is electrically connected.
8. a directly-down liquid crystal display unit be made up of liquid crystal panel, control device and backlight module at least, and described backlight module is made up of planar light source device and supply unit at least, and wherein, described backlight module is characterised in that:
The structure of described planar light source device comprises:
Support plate, it has first surface and second surface, dispose on it a plurality of in pairs and run through the hole of described first surface and described second surface, and each described hole is filled up by electric conducting material;
A plurality of light-emitting diodes are electrically connected with a plurality of paired electric conducting material on the described support plate;
A plurality of electrical connecting elements are electrically connected with described electric conducting material on the described second surface of described support plate; And
Snoot is in order to the first surface that coats described support plate, described light-emitting diode, the described first transparent support plate and the described second transparent support plate; Wherein:
Each described light-emitting diode structure comprises:
N electrode and P electrode, it is configured on the dual-side of the semiconductor layer with lighting function;
The first transparent support plate, configuration metal level on it, the electric conducting material on the N electrode of described metal level and described light-emitting diode and the first surface of described support plate is electrically connected; And
The second transparent support plate, configuration metal level on it, the electric conducting material on the P electrode of described metal level and described light-emitting diode and the first surface of described support plate is electrically connected.
9. light emitter diode seal method comprises:
Provide the first transparent support plate, a plurality of independent and big or small identical metal levels of configuration on it;
A plurality of light-emitting diodes are provided, dispose N electrode and P electrode on the dual-side of the semiconductor layer with lighting function of each described light-emitting diode;
Attach described light-emitting diode, the described N electrode side on described a plurality of light-emitting diodes is attached one by one and is electrically connected on each described metal level of the described first transparent support plate;
The second transparent support plate is provided, a plurality of independent and big or small identical metal levels of configuration on it, each described metal level is corresponding with each described metal level of the described first transparent support plate;
Attach the described second transparent support plate, the described metal level of on the described second transparent support plate each is attached and be electrically connected to the described P electrode side of each described light-emitting diode, be disposed at approximate sandwich structure between the described first transparent support plate and the described second transparent support plate so that form a kind of light-emitting diode; And
Cut described approximate sandwich structure, to form a plurality of independences and to have the light-emitting diode of described approximate sandwich structure, wherein expose the part metals layer on the described first transparent support plate and the described second transparent support plate at least one end face of each described light-emitting diode with approximate sandwich structure to the open air.
10. light emitter diode seal method comprises:
Provide the first transparent support plate, a plurality of independent and big or small identical metal levels of configuration on it;
A plurality of light-emitting diodes are provided, dispose N electrode and P electrode on the dual-side of the semiconductor layer with lighting function of each described light-emitting diode;
Attach described light-emitting diode, the described N electrode side on described a plurality of light-emitting diodes is attached one by one and is electrically connected on each described metal level of the described first transparent support plate;
The second transparent support plate is provided, a plurality of independent and big or small identical metal levels of configuration on it, each described metal level is corresponding with each described metal level of the described first transparent support plate;
Attach the described second transparent support plate, the described metal level of on the described second transparent support plate each is attached and be electrically connected to the described P electrode side of each described light-emitting diode, be disposed at approximate sandwich structure between the described first transparent support plate and the described second transparent support plate so that form a kind of light-emitting diode;
Cut described approximate sandwich structure, to form a plurality of independences and to have the light-emitting diode of described approximate sandwich structure, wherein expose the part metals layer on the described first transparent support plate and the described second transparent support plate at least one end face of each described light-emitting diode with approximate sandwich structure to the open air;
Support plate is provided, and it has first surface and second surface, dispose on it a plurality of in pairs and run through the hole of described first surface and described second surface, and each described hole is filled up by electric conducting material;
Attach the light-emitting diode of described approximate sandwich structure, the part metals laminating that exposes to the open air on the described first transparent support plate of the light-emitting diode of each described approximate sandwich structure and the described second transparent support plate is attached and be electrically connected on each paired electric conducting material;
Form a plurality of electrical connecting elements, each described electrical connecting element is electrically connected to the described electric conducting material on the described second surface of described support plate; And
Cut described support plate, to form a plurality of encapsulating structures with light-emitting diode of approximate sandwich structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101643713A CN101425554A (en) | 2007-10-30 | 2007-10-30 | Package construction having vertical LED and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101643713A CN101425554A (en) | 2007-10-30 | 2007-10-30 | Package construction having vertical LED and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101425554A true CN101425554A (en) | 2009-05-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101643713A Pending CN101425554A (en) | 2007-10-30 | 2007-10-30 | Package construction having vertical LED and manufacturing method thereof |
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| CN (1) | CN101425554A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569566A (en) * | 2012-03-09 | 2012-07-11 | 中国科学院半导体研究所 | Method for vertical packaging of gallium nitride-based LED (Light Emitting Diode) chip |
| CN109980075A (en) * | 2017-12-28 | 2019-07-05 | 宏碁股份有限公司 | Light emitting device is miniaturized |
| US10665764B2 (en) | 2017-12-19 | 2020-05-26 | Acer Incorporated | Micro lighting device |
-
2007
- 2007-10-30 CN CNA2007101643713A patent/CN101425554A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569566A (en) * | 2012-03-09 | 2012-07-11 | 中国科学院半导体研究所 | Method for vertical packaging of gallium nitride-based LED (Light Emitting Diode) chip |
| CN102569566B (en) * | 2012-03-09 | 2014-09-17 | 中国科学院半导体研究所 | Method for vertical packaging of gallium nitride-based LED (Light Emitting Diode) chip |
| US10665764B2 (en) | 2017-12-19 | 2020-05-26 | Acer Incorporated | Micro lighting device |
| CN109980075A (en) * | 2017-12-28 | 2019-07-05 | 宏碁股份有限公司 | Light emitting device is miniaturized |
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