CN102564328A - 测定方法以及测定装置 - Google Patents

测定方法以及测定装置 Download PDF

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Publication number
CN102564328A
CN102564328A CN2011103512173A CN201110351217A CN102564328A CN 102564328 A CN102564328 A CN 102564328A CN 2011103512173 A CN2011103512173 A CN 2011103512173A CN 201110351217 A CN201110351217 A CN 201110351217A CN 102564328 A CN102564328 A CN 102564328A
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CN
China
Prior art keywords
diaphragm
thickness
light
wafer
spectrum
Prior art date
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Pending
Application number
CN2011103512173A
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English (en)
Chinese (zh)
Inventor
北原信康
高桥邦充
大浦幸伸
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Disco Corp
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Disco Corp
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Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of CN102564328A publication Critical patent/CN102564328A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/0209—Low-coherence interferometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8483—Investigating reagent band
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Immunology (AREA)
  • Engineering & Computer Science (AREA)
  • Molecular Biology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
CN2011103512173A 2010-11-08 2011-11-08 测定方法以及测定装置 Pending CN102564328A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-249430 2010-11-08
JP2010249430A JP5681452B2 (ja) 2010-11-08 2010-11-08 測定方法および測定装置

Publications (1)

Publication Number Publication Date
CN102564328A true CN102564328A (zh) 2012-07-11

Family

ID=46267162

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011103512173A Pending CN102564328A (zh) 2010-11-08 2011-11-08 测定方法以及测定装置

Country Status (3)

Country Link
JP (1) JP5681452B2 (ko)
KR (1) KR101835888B1 (ko)
CN (1) CN102564328A (ko)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103433619A (zh) * 2013-08-30 2013-12-11 深圳市大族激光科技股份有限公司 激光熔覆打印机及线路板的制作方法
CN105977175A (zh) * 2015-03-11 2016-09-28 株式会社迪思科 保护膜检测方法
JP2017120248A (ja) * 2015-12-29 2017-07-06 テスト リサーチ， インク． 光学検出装置
CN107068581A (zh) * 2015-12-18 2017-08-18 株式会社迪思科 保护膜检测方法
CN107525789A (zh) * 2016-06-22 2017-12-29 株式会社迪思科 荧光检测装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10989652B2 (en) * 2017-09-06 2021-04-27 Lam Research Corporation Systems and methods for combining optical metrology with mass metrology
KR102320874B1 (ko) * 2019-03-15 2021-11-03 한국세라믹기술원 결정 성장 방법에 의하여 제조된 탄화규소의 자외선을 이용한 두께 측정 장치 및 측정 방법
JP7387227B2 (ja) * 2019-10-07 2023-11-28 株式会社ディスコ ウェーハの加工方法

Citations (7)

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US5724145A (en) * 1995-07-17 1998-03-03 Seiko Epson Corporation Optical film thickness measurement method, film formation method, and semiconductor laser fabrication method
CN1396445A (zh) * 2002-08-22 2003-02-12 上海交通大学 双面金属波导测量方法及其装置
CN1539590A (zh) * 2003-04-25 2004-10-27 株式会社迪斯科 激光加工机床
CN1786657A (zh) * 2004-12-07 2006-06-14 三星电机株式会社 用于金属表面上的有机涂膜的厚度测量方法
CN1800258A (zh) * 2004-11-12 2006-07-12 东京应化工业株式会社 用于激光割片的保护膜剂和使用保护膜剂的晶片加工方法
CN101623685A (zh) * 2008-07-07 2010-01-13 株式会社迪思科 保护膜覆盖装置和激光加工装置
WO2010011938A1 (en) * 2008-07-24 2010-01-28 Massachusetts Institute Of Technology Systems and methods for imaging using absorption

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JPS6243503A (ja) * 1985-08-20 1987-02-25 Toyota Motor Corp メタリツク塗装クリヤ−塗膜の膜厚測定法
JP3908472B2 (ja) 2001-03-13 2007-04-25 株式会社東芝 膜厚測定方法及び段差測定方法
JP5065722B2 (ja) * 2007-03-23 2012-11-07 株式会社ディスコ レーザー加工装置
JP2009103630A (ja) * 2007-10-25 2009-05-14 Nippon Soken Inc 液膜厚さ計測装置及び内燃機関の制御装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5724145A (en) * 1995-07-17 1998-03-03 Seiko Epson Corporation Optical film thickness measurement method, film formation method, and semiconductor laser fabrication method
CN1396445A (zh) * 2002-08-22 2003-02-12 上海交通大学 双面金属波导测量方法及其装置
CN1539590A (zh) * 2003-04-25 2004-10-27 株式会社迪斯科 激光加工机床
CN1800258A (zh) * 2004-11-12 2006-07-12 东京应化工业株式会社 用于激光割片的保护膜剂和使用保护膜剂的晶片加工方法
CN1786657A (zh) * 2004-12-07 2006-06-14 三星电机株式会社 用于金属表面上的有机涂膜的厚度测量方法
CN101623685A (zh) * 2008-07-07 2010-01-13 株式会社迪思科 保护膜覆盖装置和激光加工装置
WO2010011938A1 (en) * 2008-07-24 2010-01-28 Massachusetts Institute Of Technology Systems and methods for imaging using absorption

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* Cited by examiner, † Cited by third party
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楼飞燕: "CMP中抛光液膜特性的数值仿真和实验研究", 《中国博士学位论文全文数据库 信息科技辑》 *
陆霄露 等: "采用激光诱导荧光法测量油膜厚度的研究", 《内燃机学报》 *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103433619A (zh) * 2013-08-30 2013-12-11 深圳市大族激光科技股份有限公司 激光熔覆打印机及线路板的制作方法
CN103433619B (zh) * 2013-08-30 2015-10-21 大族激光科技产业集团股份有限公司 激光熔覆打印机及线路板的制作方法
CN105977175A (zh) * 2015-03-11 2016-09-28 株式会社迪思科 保护膜检测方法
CN105977175B (zh) * 2015-03-11 2021-04-23 株式会社迪思科 保护膜检测方法
CN107068581A (zh) * 2015-12-18 2017-08-18 株式会社迪思科 保护膜检测方法
CN107068581B (zh) * 2015-12-18 2021-11-19 株式会社迪思科 保护膜检测方法
JP2017120248A (ja) * 2015-12-29 2017-07-06 テスト リサーチ， インク． 光学検出装置
CN106931892A (zh) * 2015-12-29 2017-07-07 德律科技股份有限公司 光学检测装置
US10600174B2 (en) 2015-12-29 2020-03-24 Test Research, Inc. Optical inspection apparatus
CN106931892B (zh) * 2015-12-29 2020-08-04 德律科技股份有限公司 光学检测装置
CN107525789A (zh) * 2016-06-22 2017-12-29 株式会社迪思科 荧光检测装置

Also Published As

Publication number Publication date
KR20120049133A (ko) 2012-05-16
JP2012104532A (ja) 2012-05-31
KR101835888B1 (ko) 2018-03-07
JP5681452B2 (ja) 2015-03-11

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Application publication date: 20120711

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