JP2012104532A - 測定方法および測定装置 - Google Patents
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/0209—Low-coherence interferometers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8483—Investigating reagent band
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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Abstract
【解決手段】本発明の測定方法は、ウェーハWに光吸収剤を含む保護膜61を形成するステップと、保護膜61に測定光を照射し、測定光の吸収による保護膜61の発光を受光するステップと、事前に作製された保護膜61の厚みの変化に対する保護膜61の発光による光スペクトルの変化を示す測定データを参照して、保護膜61の発光強度から保護膜61の厚みを測定するステップとを有する構成とした。
【選択図】図5
Description
11 搬入搬出機構
12 保護膜形成機構
13 チャックテーブル
14 レーザー加工ユニット
15 厚み測定ユニット
16 プッシュプル機構
18 搬送機構
19 制御部(記憶手段、算出手段)
28 液状樹脂供給部
52 測定ヘッド
53 加工ヘッド
54 撮像ヘッド
55 測定用光源(光照射部)
56 ハーフミラー(光照射部)
57 ミラー(光照射部)
58、66 集光レンズ(光照射部)
59 受光部
61 保護膜
65 白色光源(光照射部)
W ウェーハ(ワーク)
Claims (3)
- ワークをレーザー加工する際に発生する加工屑からワークの表面を保護するために前記レーザーの波長の光を吸収する吸収剤を含んだ水溶性樹脂によって形成された保護膜の厚みを測定する測定方法であって、
前記吸収材を含んだ水溶性樹脂によってワーク表面に所定の厚みとなる様に前記保護膜を形成する保護膜形成工程と、
前記保護膜形成工程の後に、ワーク表面に形成された前記保護膜に前記吸収剤が吸収する波長の光を照射して、該光の吸収によって前記吸収剤が発光する光スペクトルを受光して測定するスペクトル測定工程と、
前記保護膜形成工程で形成する前記保護膜の厚みを変化させながら前記スペクトル測定工程を行うことで前記保護膜の厚み変化に対する前記光スペクトルの変化を表すマップを作製するマップ作製工程を含み、
ワークの表面に塗布された前記保護膜の厚みを測定する際は、
前記保護膜に前記吸収剤が吸収する波長の光を照射して前記光スペクトルを測定し、前記マップに基づいて前記保護膜の厚みを測定する保護膜厚み測定工程を実施することを特徴とする測定方法。 - 前記吸収剤が吸収する光の波長は少なくとも250nm以上かつ380nm以下、もしくは460nm以上かつ650nm以下のいずれかの波長を含むことを特徴とする請求項1に記載の測定方法。
- ワークをレーザー加工する際に発生する加工屑からワークの表面を保護するために前記レーザーの波長の光を吸収する吸収剤を含んだ水溶性樹脂によって形成された保護膜の厚みを測定する測定装置であって、
前記吸収剤が吸収する波長の光をワーク表面に形成された保護膜に向けて照射する光照射部と、
前記吸収剤が前記光照射部からの光を吸収して発光する光スペクトルを受光する受光部と、
前記保護膜の厚み変化に対する前記光スペクトルの変化を表すマップを記憶する記憶手段と、
前記受光部で受光した光スペクトルと前記記憶手段で記憶した前記マップに基づいて前記保護膜の厚みを求める算出手段と、を有することを特徴とする測定装置。
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JP2010249430A JP5681452B2 (ja) | 2010-11-08 | 2010-11-08 | 測定方法および測定装置 |
KR1020110111215A KR101835888B1 (ko) | 2010-11-08 | 2011-10-28 | 측정 방법 및 측정 장치 |
CN2011103512173A CN102564328A (zh) | 2010-11-08 | 2011-11-08 | 测定方法以及测定装置 |
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Cited By (6)
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JP2017112296A (ja) * | 2015-12-18 | 2017-06-22 | 株式会社ディスコ | レーザー加工用保護膜検出方法 |
JP2017120248A (ja) * | 2015-12-29 | 2017-07-06 | テスト リサーチ, インク. | 光学検出装置 |
DE102017209946A1 (de) | 2016-06-22 | 2017-12-28 | Disco Corporation | Fluoreszenzdetektionsvorrichtung |
KR20200110090A (ko) * | 2019-03-15 | 2020-09-23 | 한국세라믹기술원 | 결정 성장 방법에 의하여 제조된 탄화규소의 자외선을 이용한 두께 측정 장치 및 측정 방법 |
JP2020533787A (ja) * | 2017-09-06 | 2020-11-19 | ラム リサーチ コーポレーションLam Research Corporation | 光計測を質量計測と組合せるためのシステム及び方法 |
JP7387227B2 (ja) | 2019-10-07 | 2023-11-28 | 株式会社ディスコ | ウェーハの加工方法 |
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CN103433619B (zh) * | 2013-08-30 | 2015-10-21 | 大族激光科技产业集团股份有限公司 | 激光熔覆打印机及线路板的制作方法 |
JP6478728B2 (ja) * | 2015-03-11 | 2019-03-06 | 株式会社ディスコ | 保護膜検出方法 |
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JP7387227B2 (ja) | 2019-10-07 | 2023-11-28 | 株式会社ディスコ | ウェーハの加工方法 |
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KR101835888B1 (ko) | 2018-03-07 |
KR20120049133A (ko) | 2012-05-16 |
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