CN102544364B - 存储元件和存储装置 - Google Patents

存储元件和存储装置 Download PDF

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Publication number
CN102544364B
CN102544364B CN201110391057.5A CN201110391057A CN102544364B CN 102544364 B CN102544364 B CN 102544364B CN 201110391057 A CN201110391057 A CN 201110391057A CN 102544364 B CN102544364 B CN 102544364B
Authority
CN
China
Prior art keywords
layer
ion source
electrode
memory element
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201110391057.5A
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English (en)
Chinese (zh)
Other versions
CN102544364A (zh
Inventor
曽根威之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN102544364A publication Critical patent/CN102544364A/zh
Application granted granted Critical
Publication of CN102544364B publication Critical patent/CN102544364B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Landscapes

  • Semiconductor Memories (AREA)
CN201110391057.5A 2010-12-09 2011-11-30 存储元件和存储装置 Expired - Fee Related CN102544364B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010274816A JP5728919B2 (ja) 2010-12-09 2010-12-09 記憶素子および記憶装置
JP2010-274816 2010-12-09

Publications (2)

Publication Number Publication Date
CN102544364A CN102544364A (zh) 2012-07-04
CN102544364B true CN102544364B (zh) 2015-11-25

Family

ID=46199252

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110391057.5A Expired - Fee Related CN102544364B (zh) 2010-12-09 2011-11-30 存储元件和存储装置

Country Status (3)

Country Link
US (1) US8809826B2 (enExample)
JP (1) JP5728919B2 (enExample)
CN (1) CN102544364B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6162931B2 (ja) * 2012-06-19 2017-07-12 ソニーセミコンダクタソリューションズ株式会社 記憶素子および記憶装置
US20140264224A1 (en) * 2013-03-14 2014-09-18 Intermolecular, Inc. Performance Enhancement of Forming-Free ReRAM Devices Using 3D Nanoparticles
US10002664B2 (en) * 2013-09-18 2018-06-19 Commissariat A L'energie Atomique Et Aux Energies Alternatives Non-volatile resistive memory cell comprising metal electrodes and a solid electrolyte between the metal electrodes
US10084017B2 (en) 2014-01-17 2018-09-25 Sony Semiconductor Solutions Corporation Switch device and storage unit having a switch layer between first and second electrodes
KR101521383B1 (ko) * 2014-03-12 2015-05-19 한양대학교 산학협력단 비휘발성 저항 스위칭 메모리 소자
CN105789207A (zh) * 2014-12-22 2016-07-20 旺宏电子股份有限公司 具有含氧控制层的存储装置及其制造方法
JP6791845B2 (ja) * 2015-03-31 2020-11-25 ソニーセミコンダクタソリューションズ株式会社 スイッチ素子および記憶装置
JP6433860B2 (ja) 2015-08-06 2018-12-05 東芝メモリ株式会社 記憶装置
US11106966B2 (en) * 2017-03-13 2021-08-31 International Business Machines Corporation Battery-based neural network weights
US10734576B2 (en) * 2018-03-16 2020-08-04 4D-S, Ltd. Resistive memory device having ohmic contacts
US10833262B2 (en) * 2018-03-16 2020-11-10 4D-S, Ltd. Resistive memory device having a conductive barrier layer
US11476416B2 (en) 2018-03-29 2022-10-18 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method for manufacturing the same
US11437573B2 (en) * 2018-03-29 2022-09-06 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method for manufacturing the same
CN115267335B (zh) * 2022-08-01 2025-10-28 长鑫存储技术有限公司 位线接触节点电阻的测量方法及设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101765914A (zh) * 2007-08-06 2010-06-30 索尼公司 存储元件和存储装置
CN101794861A (zh) * 2009-01-29 2010-08-04 索尼公司 半导体存储装置及其制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
HK1039395B (en) 1999-02-11 2007-12-14 Arizona Board Of Regents Programmable microelectronic devices and methods of forming and programming same
JP4792714B2 (ja) 2003-11-28 2011-10-12 ソニー株式会社 記憶素子及び記憶装置
JP4848633B2 (ja) * 2004-12-14 2011-12-28 ソニー株式会社 記憶素子及び記憶装置
JP2007026492A (ja) * 2005-07-13 2007-02-01 Sony Corp 記憶装置及び半導体装置
JP5526776B2 (ja) * 2007-04-17 2014-06-18 日本電気株式会社 抵抗変化素子及び該抵抗変化素子を含む半導体装置
JP2009043873A (ja) * 2007-08-08 2009-02-26 Sony Corp 記憶素子および記憶装置
US8415650B2 (en) * 2009-07-02 2013-04-09 Actel Corporation Front to back resistive random access memory cells
US8134139B2 (en) * 2010-01-25 2012-03-13 Macronix International Co., Ltd. Programmable metallization cell with ion buffer layer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101765914A (zh) * 2007-08-06 2010-06-30 索尼公司 存储元件和存储装置
CN101794861A (zh) * 2009-01-29 2010-08-04 索尼公司 半导体存储装置及其制造方法

Also Published As

Publication number Publication date
US20120147656A1 (en) 2012-06-14
JP5728919B2 (ja) 2015-06-03
US8809826B2 (en) 2014-08-19
JP2012124374A (ja) 2012-06-28
CN102544364A (zh) 2012-07-04

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C06 Publication
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SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20161230

Address after: Kanagawa Japan Atsugi Asahi 4-14-1

Patentee after: SONY SEMICONDUCTOR SOLUTIONS Corp.

Address before: Tokyo, Japan

Patentee before: Sony Corp.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20151125

Termination date: 20211130