JP5728919B2 - 記憶素子および記憶装置 - Google Patents

記憶素子および記憶装置 Download PDF

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Publication number
JP5728919B2
JP5728919B2 JP2010274816A JP2010274816A JP5728919B2 JP 5728919 B2 JP5728919 B2 JP 5728919B2 JP 2010274816 A JP2010274816 A JP 2010274816A JP 2010274816 A JP2010274816 A JP 2010274816A JP 5728919 B2 JP5728919 B2 JP 5728919B2
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Japan
Prior art keywords
layer
electrode
memory
ion source
resistance
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Expired - Fee Related
Application number
JP2010274816A
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English (en)
Japanese (ja)
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JP2012124374A5 (enExample
JP2012124374A (ja
Inventor
曽根　威之
威之 曽根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
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Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2010274816A priority Critical patent/JP5728919B2/ja
Priority to CN201110391057.5A priority patent/CN102544364B/zh
Priority to US13/309,151 priority patent/US8809826B2/en
Publication of JP2012124374A publication Critical patent/JP2012124374A/ja
Publication of JP2012124374A5 publication Critical patent/JP2012124374A5/ja
Application granted granted Critical
Publication of JP5728919B2 publication Critical patent/JP5728919B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

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  • Semiconductor Memories (AREA)
JP2010274816A 2010-12-09 2010-12-09 記憶素子および記憶装置 Expired - Fee Related JP5728919B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010274816A JP5728919B2 (ja) 2010-12-09 2010-12-09 記憶素子および記憶装置
CN201110391057.5A CN102544364B (zh) 2010-12-09 2011-11-30 存储元件和存储装置
US13/309,151 US8809826B2 (en) 2010-12-09 2011-12-01 Memory element and memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010274816A JP5728919B2 (ja) 2010-12-09 2010-12-09 記憶素子および記憶装置

Publications (3)

Publication Number Publication Date
JP2012124374A JP2012124374A (ja) 2012-06-28
JP2012124374A5 JP2012124374A5 (enExample) 2014-01-16
JP5728919B2 true JP5728919B2 (ja) 2015-06-03

Family

ID=46199252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010274816A Expired - Fee Related JP5728919B2 (ja) 2010-12-09 2010-12-09 記憶素子および記憶装置

Country Status (3)

Country Link
US (1) US8809826B2 (enExample)
JP (1) JP5728919B2 (enExample)
CN (1) CN102544364B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6162931B2 (ja) * 2012-06-19 2017-07-12 ソニーセミコンダクタソリューションズ株式会社 記憶素子および記憶装置
US20140264224A1 (en) * 2013-03-14 2014-09-18 Intermolecular, Inc. Performance Enhancement of Forming-Free ReRAM Devices Using 3D Nanoparticles
US10002664B2 (en) * 2013-09-18 2018-06-19 Commissariat A L'energie Atomique Et Aux Energies Alternatives Non-volatile resistive memory cell comprising metal electrodes and a solid electrolyte between the metal electrodes
US10084017B2 (en) 2014-01-17 2018-09-25 Sony Semiconductor Solutions Corporation Switch device and storage unit having a switch layer between first and second electrodes
KR101521383B1 (ko) * 2014-03-12 2015-05-19 한양대학교 산학협력단 비휘발성 저항 스위칭 메모리 소자
CN105789207A (zh) * 2014-12-22 2016-07-20 旺宏电子股份有限公司 具有含氧控制层的存储装置及其制造方法
JP6791845B2 (ja) * 2015-03-31 2020-11-25 ソニーセミコンダクタソリューションズ株式会社 スイッチ素子および記憶装置
JP6433860B2 (ja) 2015-08-06 2018-12-05 東芝メモリ株式会社 記憶装置
US11106966B2 (en) * 2017-03-13 2021-08-31 International Business Machines Corporation Battery-based neural network weights
US10734576B2 (en) * 2018-03-16 2020-08-04 4D-S, Ltd. Resistive memory device having ohmic contacts
US10833262B2 (en) * 2018-03-16 2020-11-10 4D-S, Ltd. Resistive memory device having a conductive barrier layer
US11476416B2 (en) 2018-03-29 2022-10-18 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method for manufacturing the same
US11437573B2 (en) * 2018-03-29 2022-09-06 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method for manufacturing the same
CN115267335B (zh) * 2022-08-01 2025-10-28 长鑫存储技术有限公司 位线接触节点电阻的测量方法及设备

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
HK1039395B (en) 1999-02-11 2007-12-14 Arizona Board Of Regents Programmable microelectronic devices and methods of forming and programming same
JP4792714B2 (ja) 2003-11-28 2011-10-12 ソニー株式会社 記憶素子及び記憶装置
JP4848633B2 (ja) * 2004-12-14 2011-12-28 ソニー株式会社 記憶素子及び記憶装置
JP2007026492A (ja) * 2005-07-13 2007-02-01 Sony Corp 記憶装置及び半導体装置
JP5526776B2 (ja) * 2007-04-17 2014-06-18 日本電気株式会社 抵抗変化素子及び該抵抗変化素子を含む半導体装置
JP5088036B2 (ja) * 2007-08-06 2012-12-05 ソニー株式会社 記憶素子および記憶装置
JP2009043873A (ja) * 2007-08-08 2009-02-26 Sony Corp 記憶素子および記憶装置
JP2010177393A (ja) * 2009-01-29 2010-08-12 Sony Corp 半導体記憶装置およびその製造方法
US8415650B2 (en) * 2009-07-02 2013-04-09 Actel Corporation Front to back resistive random access memory cells
US8134139B2 (en) * 2010-01-25 2012-03-13 Macronix International Co., Ltd. Programmable metallization cell with ion buffer layer

Also Published As

Publication number Publication date
CN102544364B (zh) 2015-11-25
US20120147656A1 (en) 2012-06-14
US8809826B2 (en) 2014-08-19
JP2012124374A (ja) 2012-06-28
CN102544364A (zh) 2012-07-04

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