CN102544110B - 具有寄生电容补正结构的薄膜晶体管及用该薄膜晶体管的液晶显示器 - Google Patents
具有寄生电容补正结构的薄膜晶体管及用该薄膜晶体管的液晶显示器 Download PDFInfo
- Publication number
- CN102544110B CN102544110B CN201210073178.XA CN201210073178A CN102544110B CN 102544110 B CN102544110 B CN 102544110B CN 201210073178 A CN201210073178 A CN 201210073178A CN 102544110 B CN102544110 B CN 102544110B
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- China
- Prior art keywords
- semiconductor layer
- film transistor
- silicon semiconductor
- grid
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000012937 correction Methods 0.000 title claims abstract description 46
- 230000003071 parasitic effect Effects 0.000 title claims abstract description 46
- 239000010409 thin film Substances 0.000 title claims abstract description 45
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 239000004065 semiconductor Substances 0.000 claims abstract description 61
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 61
- 239000010703 silicon Substances 0.000 claims abstract description 61
- 230000004888 barrier function Effects 0.000 claims description 38
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 abstract 5
- 238000000034 method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000009172 bursting Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (4)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210073178.XA CN102544110B (zh) | 2012-03-19 | 2012-03-19 | 具有寄生电容补正结构的薄膜晶体管及用该薄膜晶体管的液晶显示器 |
PCT/CN2012/073502 WO2013139054A1 (zh) | 2012-03-19 | 2012-04-03 | 具有寄生电容补正结构的薄膜晶体管及用该薄膜晶体管的液晶显示器 |
US13/517,975 US8842232B2 (en) | 2012-03-19 | 2012-04-03 | Thin film transistor with parasitic capacitance compensation structure and liquid crystal display using same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210073178.XA CN102544110B (zh) | 2012-03-19 | 2012-03-19 | 具有寄生电容补正结构的薄膜晶体管及用该薄膜晶体管的液晶显示器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102544110A CN102544110A (zh) | 2012-07-04 |
CN102544110B true CN102544110B (zh) | 2014-08-13 |
Family
ID=46350564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210073178.XA Active CN102544110B (zh) | 2012-03-19 | 2012-03-19 | 具有寄生电容补正结构的薄膜晶体管及用该薄膜晶体管的液晶显示器 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN102544110B (zh) |
WO (1) | WO2013139054A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102097024B1 (ko) * | 2013-01-04 | 2020-04-06 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 |
CN103579361A (zh) * | 2013-10-23 | 2014-02-12 | 昆山龙腾光电有限公司 | 金属氧化物半导体薄膜晶体管及其制造方法 |
CN104007594B (zh) * | 2014-06-17 | 2017-12-29 | 深圳市华星光电技术有限公司 | Tft阵列基板结构 |
CN104393004A (zh) * | 2014-11-14 | 2015-03-04 | 深圳市华星光电技术有限公司 | 一种液晶显示器及其阵列基板 |
KR102519516B1 (ko) * | 2015-12-18 | 2023-04-06 | 엘지디스플레이 주식회사 | 액정 표시 장치 |
CN106920529B (zh) | 2017-05-09 | 2019-03-05 | 深圳市华星光电技术有限公司 | 像素单元及包含其的阵列基板 |
CN110379849A (zh) * | 2019-07-22 | 2019-10-25 | 深圳市华星光电半导体显示技术有限公司 | 一种薄膜晶体管及显示面板 |
CN115951528A (zh) * | 2020-02-28 | 2023-04-11 | 京东方科技集团股份有限公司 | 阵列基板及液晶显示面板 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1959984A (zh) * | 2005-11-04 | 2007-05-09 | 中华映管股份有限公司 | 薄膜晶体管、像素结构及像素结构之修补方法 |
JP2007305641A (ja) * | 2006-05-09 | 2007-11-22 | Sharp Corp | アクティブマトリクス基板および液晶表示パネル |
TW201027213A (en) * | 2009-01-09 | 2010-07-16 | Century Display Shenxhen Co | Structure of pixel thin film transistor (TFT) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100370800B1 (ko) * | 2000-06-09 | 2003-02-05 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판 제작방법 |
KR101019045B1 (ko) * | 2003-11-25 | 2011-03-04 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
CN101707211B (zh) * | 2009-01-09 | 2011-11-30 | 深超光电(深圳)有限公司 | 像素薄膜晶体管结构 |
CN101504503B (zh) * | 2009-04-10 | 2011-01-05 | 友达光电股份有限公司 | 像素阵列、液晶显示面板以及光电装置 |
CN101995713B (zh) * | 2009-08-21 | 2012-08-01 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
CN102254917B (zh) * | 2011-07-07 | 2014-05-21 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列基板及其制法 |
-
2012
- 2012-03-19 CN CN201210073178.XA patent/CN102544110B/zh active Active
- 2012-04-03 WO PCT/CN2012/073502 patent/WO2013139054A1/zh active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1959984A (zh) * | 2005-11-04 | 2007-05-09 | 中华映管股份有限公司 | 薄膜晶体管、像素结构及像素结构之修补方法 |
JP2007305641A (ja) * | 2006-05-09 | 2007-11-22 | Sharp Corp | アクティブマトリクス基板および液晶表示パネル |
TW201027213A (en) * | 2009-01-09 | 2010-07-16 | Century Display Shenxhen Co | Structure of pixel thin film transistor (TFT) |
Also Published As
Publication number | Publication date |
---|---|
CN102544110A (zh) | 2012-07-04 |
WO2013139054A1 (zh) | 2013-09-26 |
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GR01 | Patent grant | ||
CP03 | Change of name, title or address |
Address after: 518132 No. 9-2 Ming Avenue, Guangming New District, Guangdong, Shenzhen Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 518132 No. 9-2 Ming Avenue, Guangming New District, Guangdong, Shenzhen Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20210311 Address after: No.109, Kangping Road, Liuyang economic and Technological Development Zone, Changsha, Hunan 410300 Patentee after: Changsha Huike optoelectronics Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: TCL China Star Optoelectronics Technology Co.,Ltd. |
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