CN102543845B - 半导体器件及其制作方法 - Google Patents
半导体器件及其制作方法 Download PDFInfo
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CN201010620300.1A CN102543845B (zh) | 2010-12-29 | 2010-12-29 | 半导体器件及其制作方法 |
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CN102543845A CN102543845A (zh) | 2012-07-04 |
CN102543845B true CN102543845B (zh) | 2014-10-22 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102881647B (zh) * | 2012-10-12 | 2015-09-30 | 上海华力微电子有限公司 | 铜金属覆盖层的制备方法 |
CN104112702B (zh) * | 2013-04-18 | 2016-12-28 | 中芯国际集成电路制造(上海)有限公司 | 在半导体制造中降低超低k介电层损伤的方法 |
CN104900583B (zh) * | 2014-03-06 | 2018-04-13 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制作方法 |
CN105742350A (zh) * | 2014-12-08 | 2016-07-06 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件结构及其制备方法 |
CN112992708A (zh) * | 2019-12-16 | 2021-06-18 | 中微半导体设备(上海)股份有限公司 | 一种半导体器件的制作方法 |
CN117410269B (zh) * | 2023-12-15 | 2024-03-12 | 合肥晶合集成电路股份有限公司 | 一种半导体结构及其制造方法 |
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CN1610965A (zh) * | 2001-12-27 | 2005-04-27 | 兰姆研究有限公司 | 用于制作具有低k电介质性质的互连结构的方法 |
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JP2006032694A (ja) * | 2004-07-16 | 2006-02-02 | Toshiba Corp | 半導体装置の製造方法 |
JP5326558B2 (ja) * | 2008-12-26 | 2013-10-30 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
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CN1610965A (zh) * | 2001-12-27 | 2005-04-27 | 兰姆研究有限公司 | 用于制作具有低k电介质性质的互连结构的方法 |
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