CN102509844B - Micro-electromechanical disc resonator and manufacturing method thereof - Google Patents
Micro-electromechanical disc resonator and manufacturing method thereof Download PDFInfo
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Abstract
The invention relates to a micro-electromechanical disc resonator and a manufacturing method thereof. The manufacturing method comprises the following steps of: firstly, manufacturing an anchor point for fixing a resonant oscillator on a substrate silicon wafer and a concave cavity for releasing a resonant oscillator structure; bonding a device structure layer on the substrate silicon wafer; thinning the structure layer and manufacturing a metal bonding pad; manufacturing a device structure of the resonator on the structure layer by utilizing dry-process etching; and finally aligning and bonding vacuum wafers so as to fix a cover plate silicon wafer above a structure silicon wafer, so that the wafer level vacuum packaging of the resonator is realized. The manufactured anchor point of the resonator is located on a node of the oscillator, so that energy loss caused by the anchor point can be greatly reduced; and the wafer level vacuum packaging is carried out on the resonator, so that a resonator structure is prevented from being lost due to physical impacts of outside environment, and the performances of the resonator are improved. The micro-electromechanical disc resonator is suitable to being produced in batch, and since the design of the anchor points is optimized and the wafer level vacuum packaging technology is adopted, the manufacturing of the bulk silicon resonator with low cost and high performances is realized.
Description
Technical field
The invention belongs to micromechanical resonator processing and Micrometer-Nanometer Processing Technology field, particularly a kind of micromechanical disk resonator and manufacture method.
Background technology
Clock chip, as the time base source in Circuits System, has important effect in Circuits System.Traditional clock chip generally adopts quartz crystal oscillator to produce signal waveform as resonator.But quartz crystal oscillator is generally adopt cutting technique to make, and therefore its volume is difficult to reduce, thus hinders the microminiaturization of Circuits System.In addition, quartz crystal oscillator also cannot making integrated with Circuits System, improves cost of manufacture.In recent years, due to the development of micro-processing technology, MEMS micromechanical resonator obtains very large development.MEMS resonator has that size is little, power consumption is little, cost is low, with CMOS IC (Complementary Metal Oxide Semiconductor Integrated Circuit, complementary mos integrated circuit) the technique advantage such as compatible mutually, grow with each passing day in the demand in the fields such as wireless telecommunications, will the substitute of crystal resonator be become.
It is the resonance utilizing the compressional wave resonance mode characteristic of body silicon resonance oscillator structure to realize device that body silicon indulges acoustic wave micromechanical resonator.Fig. 1-1 (a) is the basic principle schematic of circular slab resonator works, and Fig. 1-1 (b) is the schematic diagram that circular slab bulk silicon micro mechanic resonator is operated in Extensional mode.Its oscillator is a circular sheet, and plectane both sides are respectively drive electrode and detecting electrode.When applying alternating voltage between drive electrode and oscillator, the electrostatic force produced by alternating voltage will encourage oscillator to enter the mode of resonance of specifying.Such oscillator will be followed and be driven electrostatic force to do stretching motion, thus causes the change of electric capacity between oscillator and detecting electrode.Thus, by detecting the change of electric capacity between oscillator and detecting electrode, just resonator signal can be exported.
The key property parameter of micromechanical resonator has: resonance frequency, quality factor (Q), frequency temperature drift etc.Wherein, the Q value of resonator is one of most important parameter of reaction resonator characteristics, and it can be expressed as:
Wherein Q is the total quality factor size of resonator, Q
airthe energy loss mechanisms caused by air damping, Q
anchorthe energy loss mechanisms caused by anchor point, Q
tEDthe thermoelasticity energy loss mechanisms of material, Q
othersrepresent other energy loss mechanisms.In these four kinds of energy loss mechanisms, latter three kinds is caused by factors such as the material of making resonator and structural designs thereof, and the first is caused by the vacuum degree of resonator works environment.Vacuum seal is carried out to resonator, just greatly can reduce the loose consumption of energy because air damping causes, thus greatly improve the Q value (Khine of resonator, L and M Palaniapan, High-Q bulk-mode SOI square resonators with straight-beam anchors.Journal of Micromechanics and Microengineering, 2009.19 (1): p.015017).
The energy loss that anchor point causes also is one of key factor affecting resonator q.The Main Basis reducing anchor point loss is: anchor point position should design the position that displacement is minimum when oscillator resonance, namely the node location of oscillator.For the circular slab resonator of Extensional mode, its node location is positioned at the center of disk.When anchor point is positioned at oscillator center, there is design difficulty high, the problems such as difficulty of processing is large.Therefore, traditional micromechanical resonator be all by oscillator around oblique pull beam by fixing for oscillator.
Traditional micromechanical resonator, generally carry out releasing structure, its complex process by carving the substrate worn immediately below resonance oscillator, and follow-up packaging technology difficulty is large.Tradition crystal silicon resonator utilizes the oblique pull beam around oscillator to fix structure usually, and the energy loss that such anchor point causes is larger, is unfavorable for the raising of total Q value of resonator.In addition, need the pad on structure silicon chip to carry out electricity interlinkage to the pad on cover plate silicon chip to the encapsulation of micromechanical resonator.Traditional method adopts TSV (Through Silicon Vias, silicon through hole) to be directly drawn out on cover plate silicon chip from silicon through hole by the pad on structure silicon chip.But TSV difficulty of processing is large, and rate of finished products is low, and processing cost is high.
Summary of the invention
For Problems existing in traditional micromechanical resonator processing, the object of the invention is to propose a kind of micromechanical resonator and manufacture method, in order to utilize simple technique and cheap cost, realize the making of micromechanical resonator and the vacuum seal of device.
A kind of resonator manufacture method of the present invention, this resonator is bonded together by silicon substrate (11), structure silicon chip (21) and cover plate silicon chip (31) to be formed, and specifically comprises the following steps:
1) anchor point (12) being used for fixing resonance oscillator (23) is etched in the front of silicon substrate (11);
2) around silicon substrate front, anchor point (12), form the first cavity (13) being used for structure release and forming vacuum chamber;
3) in step 2) after obtain body structure surface deposit the first electric insulating medium layer (14);
4) by silicon substrate (11) front and structure silicon chip (21) back side bonding, and by the reduced thickness of structure silicon chip (21) to the thickness needed for micromechanical resonator;
5) at the front of structure silicon chip (21) deposition the first metal layer, and by this metallic layer graphic, produce the first metal pad (24) contacted with the second metal pad (35) on the silicon salient point (32) of cover plate silicon chip (31);
6) from front etching structure silicon chip (21), release comprises the resonator structure of resonance oscillator (23) resonator electrode (22);
7) the second cavity (37) and silicon salient point (32) and the groove structure (33) for bonding solder is made at cover plate silicon chip (31) back side; Described first cavity (13) and the second cavity (37) form vacuum chamber, and resonator oscillator (32) is arranged in this vacuum chamber;
8) in step 7) structure that obtains deposits the second electric insulating medium layer (34) and the second metal level successively, then by this second metallic layer graphic, form metal lead wire and the second metal pad (35);
9) in described groove structure (33), bonding solder (36) is formed;
10) by step 6) after the structure that obtains carry out cryogenic vacuum with the cover plate silicon chip (31) comprising metal lead wire and metal pad (35) and bonding solder (36) and aim at bonding;
11) carry out scribing at the silicon substrate back side, expose second metal pad (35) at cover plate silicon chip (31) back side.
As one of preferred version of the present invention, described step 2) and step 7) adopt the method for wet etching or dry etching to make cavity.
As one of preferred version of the present invention, described step 4) in adopt metal, polymer or compound bonding coat to aim at bonding in silicon substrate (11) front and structure silicon chip (21) back side.
As one of preferred version of the present invention, described step 4) in adopt the method for chemical machinery or wet etching to carry out thinning thickness needed for structure wafer thinning to resonator structure.
As one of preferred version of the present invention, described step 10) in structure disk aim at bonding with cover plate disk cryogenic vacuum and adopt glass paste, polymer or metal-to-metal adhesive.
The present invention also provides a kind of micromechanical resonator, this micromechanical resonator comprises the silicon substrate (11) being provided with the first cavity (13), and this first cavity (13) middle part is provided with the anchor point (12) for fixing resonance oscillator (23); This silicon substrate (11) is provided with the first electric insulating medium layer (14);
Be provided with the structure silicon chip (21) of the first metal pad (24), this structure silicon chip is etched to the resonator structure comprising resonance oscillator (23) resonator electrode (22);
Be provided with the cover plate silicon chip (31) of the second cavity (37) and silicon salient point (32) and the groove structure (33) for bonding solder (36), this cover plate silicon chip (31) be provided with successively the second electric insulating medium layer (34) and metal lead wire and the second metal pad (35); Described first cavity (13) and the second cavity (37) form vacuum chamber, and resonator oscillator (32) is arranged in this vacuum chamber; Described cover plate silicon chip (31) is by bonding solder (36) and the first metal pad (24) and structure silicon chip (21) bonding.
As one of preferred version of the present invention, between described first electric insulating medium layer (14) and structure silicon chip (21), be provided with some patterned bonding coats (25).
As one of preferred version of the present invention, the groove structure (33) for bonding solder (36) is distributed in the outside one week of described second cavity (37).
As one of preferred version of the present invention, described bonding solder (36) width is less than the width of groove structure (33).
As one of preferred version of the present invention, the cross section of described resonance oscillator (23) is square plate, circular slab or girder construction.
As one of preferred version of the present invention, be circular columns or square column for supporting the anchor point (12) of resonator oscillator (23).
As one of preferred version of the present invention, the material of first, second electric insulating medium layer described is silica or silicon nitride.
Compared with the structure of general micromechanical resonator:
The micromechanical resonator that the present invention proposes is made up by wafer level vacuum aligning bonding of silicon substrate, structure silicon chip and cover plate silicon chip three layers of silicon chip;
The silicon substrate of the micromechanical resonator that the present invention proposes and cover plate silicon chip has curved cavity;
The micromechanical resonator silicon substrate that the present invention proposes has anchor point structure;
The cover plate silicon chip of the micromechanical resonator that the present invention proposes have silicon salient point and bonding solder structure.
Compared with general micromechanical resonator manufacture method:
The manufacture method of the micromechanical resonator that the present invention proposes, before making devices structure, has made anchor point structure and curved cavity on silicon substrate;
The manufacture method of the micromechanical resonator that the present invention proposes, while the device architecture that completes, also discharges device architecture;
The micromechanical resonator that the present invention proposes utilizes dry etching making devices gap and dispensing device structure, there is not the structure existed in structure release process and is easily adhered, needs the problems such as protection movable structure, simplify processing technology, improve rate of finished products.
The present invention utilizes the silicon salient point implementation structure silicon chip on cover plate silicon chip to be connected with the direct electricity of cover plate silicon chip, and simplicity of design, processing technology difficulty is low.
The most obvious feature of the present invention is: on silicon substrate, produce anchor point and curved cavity in advance; Subsequently while making resonator structure, realize the release of device architecture; And utilize the silicon salient point on cover plate silicon chip, realized from structure silicon chip to the electricity interlinkage cover plate silicon chip by thermocompression bonding.
Device architecture just releases by the processing method proposed due to the present invention while resonator structure fabrication completes, and without the need to follow-up release process, reduces process complexity; By utilizing the bonding making devices of common silicon chip, reduce cost; Adopt dry etching releasing structure, there is not the problem that structure sheaf and substrate are adhered; Wafer-level vacuum package is carried out to device, has not only increased device performance, reduced cost, and be applicable to batch production.
Accompanying drawing explanation
Fig. 1 (a) is circular slab resonator works schematic diagram; The circular slab resonator works mode schematic diagram that Fig. 1 (b) is Extensional mode.
Fig. 2 is the concrete technology flow process of specific embodiment of the invention embodiment 1.
Fig. 2-1 is the present invention makes fixing resonance oscillator anchor point structure in silicon substrate front.
Fig. 2-2 is the present invention makes for dispensing device structure cavitys in silicon substrate front.
Fig. 2-3 is that the present invention deposits one deck electric insulating medium layer in silicon substrate front.
Fig. 2-4 is electric insulating medium layers of patterned substrate front side of silicon wafer of the present invention, exposes the anchor point of fixing resonance oscillator oscillator.
Fig. 2-5 is that silicon substrate front and structure silicon chip back side are bonded together by the present invention, and carries out thinning to structure front side of silicon wafer.
Fig. 2-6 be the present invention at structure front side of silicon wafer depositing metal layers, and make metal pad.
Fig. 2-7 is that the present invention utilizes deep reaction ion etching technique, etches resonator structure at structure front side of silicon wafer.
Fig. 2-8 is that the present invention makes the silicon bump structure for pad transfer at cover plate silicon chip back side.
Fig. 2-9 is that the present invention makes the groove structure for applying binder at cover plate silicon chip back side.
Fig. 2-10 is that the present invention deposits one deck electric insulating medium layer at cover plate silicon chip back side.
Fig. 2-11 be the present invention at cover plate silicon chip back side depositing metal layers, and make metal lead wire and metal pad.
Fig. 2-12 is that the present invention applies bonding solder in cover plate silicon chip back side groove, and to preliminary treatment such as it are cured.
Fig. 2-13 is that structure silicon chip and cover plate silicon chip are carried out wafer level vacuum aligning bonding by the present invention.
Fig. 2-14 is that the present invention carries out scribing at the silicon substrate back side, exposes the metal pad of cover plate silicon chip back side.
Fig. 3 a is the cross-sectional view of another angle of specific embodiment of the invention circular slab resonator; Fig. 3 b is the structure chart looked up by Fig. 3 a middle section A-B.
Fig. 4 is the resulting devices structure of the embodiment of the present invention 2.
Main element symbol description:
11-silicon substrate; 12-fixes the anchor point of resonance oscillator; Cavity on 13-silicon substrate; The electric insulating medium layer in 14-silicon substrate front; 21-structure silicon chip; 22-resonator electrode; 23-resonance oscillator; Metal pad on 24-structure silicon chip; 25-bonding coat; 31-cover plate silicon chip; Silicon salient point on 32-cover plate silicon chip; 33-bonding solder; The electric insulating medium layer of 34-cover plate silicon chip back side; The metal lead wire of 35-cover plate silicon chip back side and metal pad; 36-bonding solder; Cavity on 37-cover plate silicon chip.
With resulting devices structure for reference, structure silicon chip, silicon substrate and cover plate silicon chip one side are upward front side of silicon wafer, and one side is down silicon chip back side.As Fig. 2-14 shows.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail.
Refer to shown in Fig. 3, Fig. 4, the resonator that the present invention proposes is formed by silicon substrate 11, structure silicon chip 21 and cover plate silicon chip 31 3 layers of wafer bonding together, the front of silicon substrate 11 and the back side of structure silicon chip 21, the front of structure silicon chip 21 is aimed at bonding with the back side of cover plate silicon chip 31 respectively by wafer level and is sticked together; Structure silicon chip 21 is between silicon substrate 11 and cover plate silicon chip 31; In the unsettled vacuum chamber formed at the first cavity 13 of silicon substrate 11 and the second cavity 37 of cover plate silicon chip 31 of resonance oscillator 23.In the present invention, the resonance oscillator 23 of resonator, drive electrode and detecting electrode 22 structure are positioned on structure silicon chip 21; Structure silicon chip 21 is positioned at the top of silicon substrate 11, and resonance oscillator 23 is supported on directly over substrate cavity by the anchor point 23 on silicon substrate 11.
Silicon substrate 11 front of this resonator has the anchor point 12 of fixed resonator oscillator 23; Silicon substrate 11 front has the first cavity 13 for discharging resonator structure; This silicon substrate 11 is provided with the first electric insulating medium layer 14.
The structure silicon chip 21 of this resonator is provided with the first metal pad 24, and this structure silicon chip is etched to the resonator structure comprising resonance oscillator 23 resonator electrode 22.
This resonator cover plate silicon chip 31 back side has the groove 33 for the second curved cavity 37 and bonding welding pad 36 forming vacuum chamber, second cavity 37 is in directly over resonator, and the groove 33 of bonding solder 36 is distributed in the outside one week of the second cavity 37 of cover plate silicon chip 31; Cover plate silicon chip 31 back side has silicon salient point 32 structure; Groove 33, second cavity 37 at cover plate silicon chip 31 back side and silicon salient point 32 have the second electric insulating medium layer 34 above; The back side of cover plate silicon chip 31 has one deck and realizes and the extraneous patterned metal level be electrically connected, and metal level is deposited on the second electric insulating medium layer 34; The silicon salient point 32 of cover plate silicon chip 31 there is metal pad 35, silicon salient point 32 is positioned at directly over the first metal pad 24 on structure silicon chip 21, when cover plate silicon chip 31 and structure silicon chip 21 bonding, cover the second metal pad 35 on silicon salient point 32 and the first metal pad 24 close contact on structure silicon chip 21, thus implementation structure silicon chip 21 is to the electrical connection of cover plate silicon chip 31; The back side of cover plate silicon chip 31 has the patterned bonding solder 36 of a circle, and bonding solder 36 is in the second groove 33 of cover plate silicon chip 31 bonding solder, and it is positioned on metal level, and width is less than the second recess width.
In the present invention, resonance oscillator structure can be square plate, circular slab, can be also girder construction, and be not limited thereto.The anchor point supporting resonator oscillator structure can be circular columns, can be also square column, and be not limited thereto.The electric insulating medium layer of silicon substrate front and cover plate silicon chip back side can be silica, can be also silicon nitride, and be not limited thereto.
Anchor point in the present invention on silicon substrate and cavity just completed before resonator structure completes.The release of the making resonator device architecture of resonator structure completes simultaneously.The method of wet etching or dry etching can be adopted to make substrate cavity and cover plate curved cavity, and be not limited thereto.The bonding coat aiming at bonding for silicon substrate with structure silicon chip disk can be metal, can be also polymer or compound, and be not limited thereto.By the thickness needed for structure wafer thinning to resonator structure, the method for chemical machinery can be adopted, or use wet etching to carry out thinning, and be not limited thereto.The binder aiming at bonding for structure disk with cover plate disk cryogenic vacuum can be glass paste, can be also polymer or metal, and be not limited thereto.In the method by scribing, the scribe line on silicon substrate is scratched, after exposing the metal pad on cover plate silicon chip, by the method for scribing, the resonator element on disk is separated again, now scribing should be carried out respectively in X direction and y direction, and scribing thickness is the thickness of bonding pad.
Embodiment 1
Structure silicon chip, silicon substrate select low resistance silicon chip, and resistivity is 0.01-1 Ω cm, the resistivity not requirement of cover plate silicon chip.Silicon substrate is used for making the anchor point of fixing resonance oscillator and the cavity of releasing structure.The anchor point structure of fixing oscillator can be circular columns, also can be square column.Structure silicon chip is used for making resonance oscillator structure, and resonance oscillator can be circular slab, also can be square plate.The electric insulating medium layer being deposited on silicon substrate front and cover plate silicon chip back side can be silica, also can be silicon nitride.At the back side of cover plate silicon chip, by the method coating last layer bonding solder of silk screen printing, (bonding solder can be glass paste, polymer or metal), and bonding solder is graphical, then adopt wafer level vacuum to aim at bonding and itself and structure silicon chip are sticked together.Resonator achieves metal pad from structure silicon chip to the transfer of cover plate silicon chip by the silicon salient point on cover plate silicon chip.Main technological steps comprises:
(1) on the heavily doped monocrystalline silicon piece of polishing, by the etching technics of oxidation, photoetching, silicon, the anchor point of fixing resonance oscillator is constructed in silicon substrate front.See Fig. 2-1.
(2) cavity for discharging resonator structure is etched in silicon substrate front.See Fig. 2-2.
(3) the silicon substrate front obtained in step (2) deposits one deck electric insulating medium layer.See Fig. 2-3.
(4) the electric insulating medium layer in silicon substrate front step (3) obtained carries out graphically, exposing anchor point structure.See Fig. 2-4.
(5) silicon substrate front step (4) obtained and structure silicon chip back side are bonded together, and at structure front side of silicon wafer by structure wafer thinning to required thickness.See Fig. 2-5.
(6) the front depositing metal layers of the bonding wafers obtained in step (5), and by the technique such as photoetching, corrosion of metals, it is graphical, the metal pad contacted with pad on cover plate silicon chip is made at structure front side of silicon wafer.See Fig. 2-6.
(7) by the technique such as photoetching, deep reaction ion etching, resonator structure is produced in the bonding wafers front obtained of step (6).See Fig. 2-7.
(8) at cover plate silicon chip back side, silicon bump structure is produced by the etching process of oxidation, photoetching, silicon.See Fig. 2-8.
(9) the cover plate silicon chip back side obtained in step (8) erodes away the groove structure for applying bonding welding pad.See Fig. 2-9.
(10) the cover plate silicon chip back side obtained in step (9) deposits one deck electric insulating medium layer.See Fig. 2-10.
(11) the backside deposition metal level of the cover plate silicon chip obtained in step (10), and by the technique such as photoetching, corrosion of metals, it is graphical.See Fig. 2-11.
(12) the cover plate silicon chip back side obtained in step (11) applies the patterned bonding solder of last layer by the method for silk screen printing, and then para-linkage solder carries out sintering processes.See Fig. 2-12.
(13) the bonding wafers front comprising resonator structure in step (7) and the cover plate silicon chip back side in step (12) are carried out low-temperature round slice under vacuum and aim at bonding, bonding temperature scope is 300-500 DEG C.See Fig. 2-13.
(14) bonding wafers that step (13) obtains is carried out scribing by scribing machine at resonator chip substrate scribe line place, exposed by the metal pad on cover plate silicon chip, scribing THICKNESS CONTROL is the thickness of silicon substrate.
(15) bonding wafers in step (14) is carried out scribing by scribing machine on transverse axis and y direction, be separated by resonator element, obtain bulk silicon micro mechanic resonator chip, Fig. 2-13 is shown in by the device architecture obtained.
Embodiment 2
The present embodiment concrete implementation step part is identical with embodiment 1, and the main distinction is: the first, after embodiment 1 step (4), then deposits one deck bonding coat respectively in silicon substrate front and structure silicon chip back side, and respectively that it is graphical; The second, in embodiment 1 step (5), patterned silicon substrate front and structure silicon chip back side are carried out wafer level vacuum and aim at bonding.All the other processing steps are constant.Resulting devices geometric configuration as shown in Figure 4.
The above-mentioned description to embodiment can understand and apply the invention for ease of those skilled in the art.Person skilled in the art obviously easily can make various amendment to these embodiments, and General Principle described herein is applied in other embodiments and need not through performing creative labour.Therefore, the invention is not restricted to embodiment here, those skilled in the art are according to announcement of the present invention, and the improvement made for the present invention and amendment all should within protection scope of the present invention.
Claims (12)
1. a resonator manufacture method, is characterized in that, this resonator is bonded together by silicon substrate (11), structure silicon chip (21) and cover plate silicon chip (31) to be formed, and specifically comprises the following steps:
1) anchor point (12) being used for fixing resonance oscillator (23) is etched in the front of silicon substrate (11);
2) around silicon substrate front, anchor point (12), form the first cavity (13) being used for structure release and forming vacuum chamber;
3) in step 2) after obtain body structure surface deposit the first electric insulating medium layer (14); Described first electric insulating medium layer is carried out graphically, exposing anchor point (12);
4) by silicon substrate (11) front and structure silicon chip (21) back side bonding, and by the reduced thickness of structure silicon chip (21) to the thickness needed for micromechanical resonator;
5) at the front of structure silicon chip (21) deposition the first metal layer, and by this metallic layer graphic, produce the first metal pad (24) contacted with the second metal pad (35) on the silicon salient point (32) of cover plate silicon chip (31);
6) from front etching structure silicon chip (21), release comprises the resonator structure of resonance oscillator (23) resonator electrode (22);
7) the second cavity (37) and silicon salient point (32) and the groove structure (33) for bonding solder is made at cover plate silicon chip (31) back side; Described first cavity (13) and the second cavity (37) form vacuum chamber, and resonator oscillator (23) is arranged in this vacuum chamber;
8) in step 7) structure that obtains deposits the second electric insulating medium layer (34) and the second metal level successively, then by this second metallic layer graphic, form metal lead wire and the second metal pad (35);
9) in described groove structure (33), bonding solder (36) is formed;
10) by step 6) after the structure that obtains carry out cryogenic vacuum with the cover plate silicon chip (31) comprising metal lead wire and the second metal pad (35) and bonding solder (36) and aim at bonding;
11) carry out scribing at the silicon substrate back side, expose second metal pad (35) at cover plate silicon chip (31) back side.
2. resonator manufacture method according to claim 1, is characterized in that, described step 2) and step 7) adopt the method for wet etching or dry etching to make cavity.
3. resonator manufacture method according to claim 1, is characterized in that, described step 4) in adopt metal, polymer or compound bonding coat to aim at bonding at silicon substrate (11) front and structure silicon chip (21) back side.
4. resonator manufacture method according to claim 1, is characterized in that, described step 4) in adopt the method for chemical machinery or wet etching to carry out thinning thickness needed for structure wafer thinning to resonator structure.
5. resonator manufacture method according to claim 1, is characterized in that, described step 10) in structure disk aim at bonding with cover plate disk cryogenic vacuum and adopt glass paste, polymer or metal-to-metal adhesive.
6. a micromechanical resonator, it is characterized in that: this micromechanical resonator comprises the silicon substrate (11) being provided with the first cavity (13), this first cavity (13) middle part is provided with the anchor point (12) for fixing resonance oscillator (23); This silicon substrate (11) is provided with except anchor point the first electric insulating medium layer (14);
Be provided with the structure silicon chip (21) of the first metal pad (24), this structure silicon chip is etched to the resonator structure comprising resonance oscillator (23) resonator electrode (22);
Be provided with the cover plate silicon chip (31) of the second cavity (37) and silicon salient point (32) and the groove structure (33) for bonding solder (36), this cover plate silicon chip (31) be provided with successively the second electric insulating medium layer (34) and metal lead wire and the second metal pad (35); Described first cavity (13) and the second cavity (37) form vacuum chamber, and resonator oscillator (23) is arranged in this vacuum chamber; Described cover plate silicon chip (31) is by bonding solder (36) and the first metal pad (24) and structure silicon chip (21) bonding.
7. micromechanical resonator according to claim 6, is characterized in that: be provided with some patterned bonding coats (25) between described first electric insulating medium layer (14) and structure silicon chip (21).
8. micromechanical resonator according to claim 6, is characterized in that: the groove structure (33) for bonding solder (36) is distributed in the outside one week of described second cavity (37).
9. micromechanical resonator according to claim 8, is characterized in that: described bonding solder (36) width is less than the width of groove structure (33).
10. micromechanical resonator according to claim 6, is characterized in that: the cross section of described resonance oscillator (23) is square plate, circular slab or girder construction.
11. micromechanical resonators according to claim 6, is characterized in that: be circular columns or square column for supporting the anchor point (12) of resonator oscillator (23).
12. micromechanical resonators according to claim 6, is characterized in that: the material of first, second electric insulating medium layer described is silica or silicon nitride.
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Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN105306003B (en) * | 2015-11-20 | 2017-12-22 | 中国科学院半导体研究所 | Flexible resonator design and preparation method thereof in annular detecting electrode face |
| CN105668501B (en) * | 2016-01-28 | 2017-03-08 | 安徽北方芯动联科微系统技术有限公司 | The MEMS chip of the wafer-level package with multifunctional cover plate and its manufacture method |
| CN109231153A (en) * | 2018-08-22 | 2019-01-18 | 深圳市奥极医疗科技有限公司 | The chip grade packaging structure and production method and dicing method of micro-acceleration sensor |
| CN110289823B (en) * | 2019-05-31 | 2021-11-02 | 武汉大学 | Micromechanical resonator |
| CN111200411A (en) * | 2020-02-16 | 2020-05-26 | 南通大学 | Micromechanical piezoelectric disc resonator and manufacturing method thereof |
| CN115215285A (en) * | 2021-04-21 | 2022-10-21 | 中国科学院上海微系统与信息技术研究所 | (111) silicon transfer process based on silicon nitride anodic bonding |
| CN117955446A (en) * | 2022-10-21 | 2024-04-30 | 广州乐仪投资有限公司 | Preparation method of semiconductor structure, semiconductor structure and electronic equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6391673B1 (en) * | 1999-11-04 | 2002-05-21 | Samsung Electronics Co., Ltd. | Method of fabricating micro electro mechanical system structure which can be vacuum-packed at wafer level |
| CN101867080A (en) * | 2010-05-21 | 2010-10-20 | 中国科学院上海微系统与信息技术研究所 | Bulk silicon micro mechanic resonator and manufacturing method thereof |
| CN102122935A (en) * | 2011-03-11 | 2011-07-13 | 中国科学院上海微系统与信息技术研究所 | Micro-mechanical resonator having submicron clearances and manufacturing method thereof |
-
2011
- 2011-09-22 CN CN201110283452.1A patent/CN102509844B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6391673B1 (en) * | 1999-11-04 | 2002-05-21 | Samsung Electronics Co., Ltd. | Method of fabricating micro electro mechanical system structure which can be vacuum-packed at wafer level |
| CN101867080A (en) * | 2010-05-21 | 2010-10-20 | 中国科学院上海微系统与信息技术研究所 | Bulk silicon micro mechanic resonator and manufacturing method thereof |
| CN102122935A (en) * | 2011-03-11 | 2011-07-13 | 中国科学院上海微系统与信息技术研究所 | Micro-mechanical resonator having submicron clearances and manufacturing method thereof |
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