CN109687835A - Thin film bulk acoustic wave resonator and preparation method thereof, filter - Google Patents
Thin film bulk acoustic wave resonator and preparation method thereof, filter Download PDFInfo
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- CN109687835A CN109687835A CN201811551626.6A CN201811551626A CN109687835A CN 109687835 A CN109687835 A CN 109687835A CN 201811551626 A CN201811551626 A CN 201811551626A CN 109687835 A CN109687835 A CN 109687835A
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- 125000006850 spacer group Chemical group 0.000 claims description 31
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/0211—Means for compensation or elimination of undesirable effects of reflections
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02133—Means for compensation or elimination of undesirable effects of stress
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The present disclosure proposes a kind of thin film bulk acoustic wave resonator and preparation method thereof, filter；Wherein, the thin film bulk acoustic wave resonator, comprising: substrate and piezo-electric stack structure are formed on the substrate；Wherein, it is formed with centre-pillar structure in the eccentric position of the thin film bulk acoustic wave resonator, is formed with cavity around the centre-pillar structure.The disclosure reduces influence of the extraneous stress to the resonance frequency of device, the application suitable for upper frequency stability requirement.
Description
Technical field
The disclosure belongs to wireless communication technique field, relates more specifically to a kind of thin film bulk acoustic wave resonator and its production side
Method, filter.
Background technique
Thin film bulk acoustic wave resonator (FBAR) relies on high q-factor, the advantages such as biggish coefficient of coup, applied to radio frequency now
In filter and oscillator.
The main problem that oscillator faces is extraneous stress transfer to resonator, so that resonance frequency becomes
Change, and then influences the centre frequency of oscillator.Such as the oscillator made by FBAR, FBAR can be generally mounted on comprising metal
On the printed circuit board (PCB) of laminating media.When PCB is heated or cools down, pcb board can deformation occurs, the stress of generation
It is transmitted to FBAR, resonance frequency is caused to change.Though the frequency of variation is small, more serious than frequency deviation caused by the factors such as aging, and
And it is very difficult to quantify.
Application for high precision electro subdomains, the devices difficult that frequency deviation caused by external force is are met the requirements.Such as GPS
Requirement on devices frequency shift (FS) control also only allows frequency deviation in therefore ± 10ppm in ± 0.5ppm, the wireless applications such as Wifi and bluetooth
It is interior.Therefore, reducing influence of the extraneous stress to acoustic resonator frequency is particularly important.
However, the number of layers that existing film bulk acoustic and filter, oscillator are generally grown is more, technique is more multiple
Miscellaneous, extraneous stress is easily transmitted to resonating device, and frequency deviation is serious, can not effectively reduce extraneous stress to the shadow of acoustic resonator frequency
It rings.
Summary of the invention
(1) technical problems to be solved
Present disclose provides a kind of thin film bulk acoustic wave resonator and preparation method thereof, filter, at least partly solve with
Upper existing technical problem.
(2) technical solution
According to one aspect of the disclosure, a kind of thin film bulk acoustic wave resonator is provided, comprising:
Substrate, and
Piezo-electric stack structure is formed on the substrate；
Wherein, it is formed with centre-pillar structure in the eccentric position of the thin film bulk acoustic wave resonator, in the centre-pillar structure
Surrounding is formed with cavity.
In some embodiments, the piezo-electric stack structure include lower electrode layer, upper electrode layer and be located at the lower electricity
Piezoelectric layer between pole layer and upper electrode layer；The lower electrode and the substrate surround the cavity.
In some embodiments, the piezo-electric stack structure include lower electrode layer, upper electrode layer and be located at the lower electricity
Piezoelectric layer between pole layer and upper electrode layer；The thin film bulk acoustic wave resonator further includes being formed in the substrate and the lower electricity
Conductive layer between the layer of pole, forms the cavity between the lower electrode and the conductive layer.
In some embodiments, the lower electrode layer includes the first lower electrode and the second lower electrode；
Described first lower electrode includes the first part being sequentially connected, second part, Part III and Part IV,
In, first part and Part IV and the substrate contact, and first part and Part III are along the side for being parallel to the substrate
To extension, second part and Part IV extend along the direction perpendicular to the substrate；
Described second lower electrode includes the first part being sequentially connected, second part, Part III, Part IV and the 5th
Part, wherein the first part of the described second lower electrode and Part V and the substrate contact, and the described second lower electrode
First part, Part III and Part V extend along the direction for being parallel to the substrate, and second of the described second lower electrode
Divide and Part IV extends along the direction perpendicular to the substrate.
In some embodiments, the piezoelectric layer includes the first piezoelectric film and the second piezoelectric film, and first piezoelectric film is complete
The Part IV of the lower electrode of all standing first and the Part III for being completely covered or partially covering the first lower electrode；
The second piezoelectricity membrane part covers the first part of the described second lower electrode, and the described second lower electrode is completely covered
Second part, and be completely covered or the Part III of the lower electrode of part covering second.
In some embodiments, the upper electrode layer includes:
First part extends along the direction perpendicular to substrate, and electrode is descended with the substrate and described second simultaneously in bottom
First part's contact, and the first part of the upper electrode layer is between first piezoelectric film and the second piezoelectric film；
Second part is located on the piezoelectric layer, extends along the direction for being parallel to the substrate.
In some embodiments, the thin film bulk acoustic wave resonator further includes wall, the wall include first between
Diaphragm and the second spacer film；
First spacer film is between first piezoelectric film and the upper electrode layer, and bottom connects with the substrate
Touching；Second spacer film is between second piezoelectric film and the upper electrode layer, and electrode under bottom and described second
First part contact；Or
First spacer film is located between the described first lower electrode and first piezoelectric film, and bottom and the substrate
Contact；Under second spacer film is located at described second between electrode and second piezoelectric film, and under bottom and described second
The first part of electrode contacts.
In some embodiments, the thin film bulk acoustic wave resonator further includes the first protrusion and the second protrusion；
First protrusion is between the upper electrode layer and first piezoelectric film and is located at the second of the upper electrode layer
Partial wherein one end；Or first protrusion be located between first piezoelectric film and the Part III of the first lower electrode and position
In the one end of first piezoelectric film；
Second protrusion is between the upper electrode layer and second piezoelectric film and is located at the upper electrode layer
Wherein the other end of second part；Or second protrusion be located at second piezoelectric film and second time electrode Part III it
Between and be located at second piezoelectric film one end.
In some embodiments, the thin film bulk acoustic wave resonator further includes pad layer, be located at the upper electrode layer and
On the lower electrode layer.
In some embodiments, the pad layer part covers the second part of the upper electrode layer, the first lower electricity
The Part V or first part of the first part of pole and the second lower electrode.
In some embodiments, the conductive layer includes the first conductive film and the second conductive film；The lower electrode layer includes
First lower electrode and the second lower electrode；Described first lower electrode includes connected first part and second part；First lower electrode
First part extend along the direction for being parallel to substrate, the second part of the first lower electrode prolongs along the direction perpendicular to substrate
It stretches, and with the substrate contact, described first there is down a gap between the first part and first conductive film of electrode；The
Two lower electrodes extend along the direction for being parallel to the substrate, and have a gap between second conductive film；
The piezoelectric layer includes the first piezoelectric film and the second piezoelectric film, and the first lower electrode is completely covered in first piezoelectric film
First part and second part；The described second lower electrode is completely covered in second piezoelectric film；
The upper electrode layer includes: first part, along perpendicular to substrate direction extend, bottom simultaneously with the substrate
And second conductive film contact, and the first part of the upper electrode layer be located at first piezoelectric film and the second piezoelectric film it
Between；And second part, it is located on the piezoelectric layer, extends along the direction for being parallel to the substrate；
The thin film bulk acoustic wave resonator further includes wall, which includes the first spacer film and the second spacer film；
First spacer film is between first piezoelectric film and the upper electrode layer, and bottom and the substrate contact；It is described
Second spacer film is between second piezoelectric film and the upper electric layer pole, and bottom is contacted with second conductive film.
In some embodiments, the piezoelectric layer includes the first piezoelectric film and the second piezoelectric film, and the first piezoelectric film is formed in
On the Part III of described first lower electrode, the second piezoelectric film is formed on the Part III of the described second lower electrode；
The upper electrode layer includes: first part, along perpendicular to substrate direction extend, bottom simultaneously with the substrate
And described second lower electrode first part's contact, and the first part of the upper electrode layer is located at first piezoelectric film and the
Between two piezoelectric films and it is located under the Part IV and described second of the lower electrode of institute first between the second part of electrode；And the
Two parts are located on the piezoelectric layer, extend along the direction for being parallel to the substrate；
The thin film bulk acoustic wave resonator further includes wall, which includes the first spacer film and the second spacer film；
The bottom of first spacer film and the substrate contact, and the Part IV of the described first lower electrode is completely covered, partially covers
The Part III and part for covering the described first lower electrode cover first piezoelectric film；The bottom of first spacer film with it is described
First part's contact of second lower electrode, and the second part of the described second lower electrode is completely covered, partially covers described second
The Part III of lower electrode and part cover second piezoelectric film.
In some embodiments, the centre-pillar structure includes: the part with the substrate transverse of the upper electrode layer, institute
State the part with the substrate transverse of wall, the part with the substrate transverse of the piezoelectric layer, the lower electrode layer
With the substrate transverse and close to the wall part.
According to another aspect of the disclosure, a kind of production method of thin film bulk acoustic wave resonator is additionally provided, comprising:
Growth sacrificial layer and graphical treatment on substrate form the first open area；
Growth lower electrode layer simultaneously etches lower electrode layer, forms the second open area in first open area；
Grow piezoelectric layer and upper electrode layer；
Upper electrode layer is etched, and etches piezoelectric layer, forms third open area in second open area；
Etching removes the sacrificial layer, between the lower electrode and the substrate, the thin film bulk acoustic wave resonator
Effective resonance range forms cavity.
In some embodiments, the production method, further include between the lower electrode layer and the piezoelectric layer or
Separation layer is grown between the piezoelectric layer and the piezoelectric layer and the upper electrode layer, and makees image conversion processing.
In some embodiments, before growing sacrificial layer, further include growth conductive layer and make image conversion processing.
In some embodiments, the production method further includes in the lower electrode layer and the piezoelectric layer or described
Bulge-structure is formed between piezoelectric layer and the upper electrode layer.
According to the another aspect of the disclosure, a kind of filter is additionally provided comprising cascade multiple thin-film bodies
Acoustic resonator.
(3) beneficial effect
It can be seen from the above technical proposal that a kind of thin film bulk acoustic wave resonator of the disclosure and preparation method thereof, filter
At least have the advantages that one of them:
(1) disclosure reduces influence of the extraneous stress to the resonance frequency of device, wants suitable for upper frequency stability
The application asked.
(2) disclosure technique is relatively easy, does not need to chemically-mechanicapolish polish sacrificial layer (CMP) processing, can also subtract
The number of layers grown less, this is all reduced the production cost
(3) disclosure pad structure can reduce connection resistance, while the first pad is located at newel area, can reinforce
Rod structure.In addition, the both ends of the first pad are located at the boundary of resonance effective district, can sound wave by resonating device in edge it is anti-
It is emitted back towards effective resonance range, improves the Q value of device.
Detailed description of the invention
Fig. 1 is the front section view of the 1st embodiment film bulk acoustic device of the disclosure.
Fig. 2 is the top view of the 1st embodiment film bulk acoustic device of the disclosure.
Fig. 3 is the front section view of the 2nd embodiment film bulk acoustic device of the disclosure.
Fig. 4 is the front section view of the 3rd embodiment film bulk acoustic device of the disclosure.
Fig. 5 is the front section view of the 4th embodiment film bulk acoustic device of the disclosure.
Fig. 6 is disclosure film bulk acoustic device production method flow chart.
Fig. 7 a- Fig. 7 h is disclosure film bulk acoustic device manufacturing process schematic diagram.
<symbol description>
1- substrate；2- sacrificial layer (sacrifices layer region and corresponds to cavity area)；3- lower electrode layer；The lower electrode of 31- first, 32-
Second lower electrode；311-314 is respectively the first part of the first lower electrode to Part IV；321-325 is respectively the second lower electricity
The first part of pole is to Part V；4- piezoelectric layer；The first piezoelectric film of 41-, the second piezoelectric film of 42-；5- wall；51- first
Spacer film, the second spacer film of 52-；6- upper electrode layer；The first part of 61- upper electrode layer, the second part of 62- upper electrode layer；
7- conductive layer；The first conductive film of 71-, the second conductive film of 72-；8- bulge-structure；The first protrusion of 81-, the second protrusion of 82-；9- weldering
Disc layer；The first pad of 91-, the second pad of 92-, 93- third pad；O- center pillar position.
Specific embodiment
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.
Present disclose provides a kind of thin film bulk acoustic wave resonator, comprising:
Substrate, and
Piezo-electric stack structure is formed on the substrate；
Wherein, it is formed with centre-pillar structure in the eccentric position of the thin film bulk acoustic wave resonator, in the centre-pillar structure
Surrounding is formed with cavity.
Disclosure thin film bulk acoustic wave resonator reduces influence of the extraneous stress to the resonance frequency of device, is suitable for higher
The application that frequency stability requires.
Specifically, the piezo-electric stack structure include: lower electrode layer, upper electrode layer and be located at the lower electrode layer and on
Piezoelectric layer between electrode layer；The lower electrode layer and the substrate surround the cavity.
The centre-pillar structure is the column construction to play a supportive role in bulk acoustic wave resonator, comprising: the upper electrode layer
With the part of the substrate transverse, the part with the substrate transverse of the wall, the piezoelectric layer with the substrate
Vertical part, the part with the substrate transverse and the close wall of the lower electrode layer.
Further, the thin film bulk acoustic wave resonator, which may also include, is formed between the substrate and the lower electrode layer
Conductive layer, the cavity is formed between the lower electrode layer and the conductive layer.
The lower electrode layer includes the first lower electrode and the second lower electrode；Described first lower electrode includes the be sequentially connected
A part, second part, Part III and Part IV, wherein first part and Part IV and the substrate contact, and the
A part and Part III extend along the direction for being parallel to the substrate, and second part and Part IV are along perpendicular to the substrate
Direction extend；Described second lower electrode include the first part being sequentially connected, second part, Part III, Part IV and
Part V, wherein the first part of the described second lower electrode and Part V and the substrate contact, and the described second lower electricity
The first part of pole, Part III and Part V extend along the direction for being parallel to the substrate, and the of the described second lower electrode
Two parts and Part IV extend along the direction perpendicular to the substrate.
The piezoelectric layer includes the first piezoelectric film and the second piezoelectric film, and the first lower electrode is completely covered in first piezoelectric film
Part IV and be completely covered or the Part III of the lower electrode of part covering first；The second piezoelectricity membrane part covers institute
The first part for stating the second lower electrode, is completely covered the second part of the described second lower electrode, and is completely covered or partially covers
The Part III of the lower electrode of lid second.
The upper electrode layer includes: first part, along perpendicular to substrate direction extend, bottom simultaneously with the substrate
And described second lower electrode first part's contact, and the first part of the upper electrode layer is located at first piezoelectric film and the
Between two piezoelectric films；Second part is located on the piezoelectric layer, extends along the direction for being parallel to the substrate.
The thin film bulk acoustic wave resonator further includes pad layer, is located on the upper electrode layer and the lower electrode.Tool
Body, the pad layer be located on the second part of the upper electrode layer (upper electrode layer described in face with the substrate transverse
Part, the part with the substrate transverse of the wall, the part with the substrate transverse of the piezoelectric layer is described
Lower electrode layer with the substrate transverse and close to the part of the wall), in the first part of the first lower electrode,
And described second lower electrode Part V on, partially cover the second part of the upper electrode layer, the first lower electrode
The Part V of first part and the second lower electrode.If center pillar is wider, top electrode does not cover the second lower electrode all
The first part of first part, pad layer and the second lower electrode also can contact, to further decrease resistance loss.
The wall includes the first spacer film and the second spacer film；First spacer film is located at first piezoelectric film
Between the upper electrode layer, and bottom and the substrate contact；Second spacer film is located at second piezoelectric film and institute
It states between upper electrode layer, and bottom is contacted with the first part of the described second lower electrode；Or first spacer film is positioned at described
Between first lower electrode and first piezoelectric film, and bottom and the substrate contact；Second spacer film is located at described the
Between two lower electrodes and second piezoelectric film, and bottom is contacted with the first part of the described second lower electrode.
The thin film bulk acoustic wave resonator may also include the first protrusion and the second protrusion；First protrusion is located at described power on
The wherein one end of second part between pole layer and first piezoelectric film and positioned at the upper electrode layer；Or first protrusion
Between first piezoelectric film and the Part III of the first lower electrode and positioned at the one end of first piezoelectric film；Institute
The second protrusion is stated between the upper electrode layer and second piezoelectric film and is located at the second part of the upper electrode layer
Wherein the other end；Or second protrusion be located between second piezoelectric film and the Part III of the second lower electrode and be located at institute
State the one end of the second piezoelectric film.
Fig. 1 is the front section view of the 1st embodiment film bulk acoustic device of the disclosure.As shown in Figure 1, the present embodiment thin-film body
Acoustic wave device includes: substrate 1, sacrificial layer 2, lower electrode layer 3, piezoelectric layer 4, wall 5, upper electrode layer 6 and pad 9.
Wherein, the sacrificial layer of disclosure film bulk acoustic device can be finally etched away, namely be finally made
Film bulk acoustic device does not include sacrificial layer, sacrifices layer region and forms cavity area accordingly, therefore is formed and supported by intermediate studdle
Device.The present embodiment film bulk acoustic device has the shape of similar disk, passes through upper electrode layer-piezoelectric layer-lower electrode layer
Sandwich structure resonance.
Fig. 2 is the top view of the 1st embodiment film bulk acoustic device of the disclosure.As shown in Figs. 1-2, the lower electrode layer is carved
Lose into the first lower electrode 31 and the second lower electrode 32.Wherein the first lower electrode 31 is drawn by marginal portion, and upper electrode layer is logical
It crosses center pillar to connect with the second lower electrode 32, to draw by edge, helps to reduce effect of the extraneous stress to device, thus
Reduce the offset of frequency.
Described first lower electrode 31 includes the first part 311 being sequentially connected, second part 312, Part III 313 and the
Four parts 314, wherein first part and Part IV and the substrate contact, and first part and Part III edge are parallel to
The direction of the substrate extends, and second part and Part IV extend along the direction perpendicular to the substrate.
Described second lower electrode 32 includes the first part 321 being sequentially connected, second part 322, Part III 323, the
Four parts 324 and Part V 325, wherein the first part of the described second lower electrode and Part V and the substrate contact,
And the first part of electrode, Part III and Part V extend along the direction for being parallel to the substrate under described second, it is described
The second part and Part IV of second lower electrode extend along the direction perpendicular to the substrate.
The piezoelectric layer 4 includes the first piezoelectric film 41 and the second piezoelectric film 42.First piezoelectric film is completely covered first
The Part IV of lower electrode and the Part III of the lower electrode of part covering first.Second piezoelectricity membrane part covering described the
The first part of two lower electrodes, is completely covered the second part of the described second lower electrode, and the of the lower electrode of part covering second
Three parts.
The upper electrode layer 6 includes first part 61 and second part 62.The first part 61 is along perpendicular to substrate
Direction extends, and bottom is contacted with the first part of the substrate and the second lower electrode simultaneously, and the upper electrode layer
First part is between first piezoelectric film and the second piezoelectric film.The second part 62 is located on the piezoelectric layer, edge
The direction for being parallel to the substrate extends.
The thin film bulk acoustic wave resonator further includes wall 5, which includes the first spacer film 51 and the second interval
Film 52.First spacer film is between first piezoelectric film and the upper electrode layer, and bottom and the substrate contact；
Second spacer film is between second piezoelectric film and the upper electrode layer, and the of bottom and the described second lower electrode
A part contact.
The thin film bulk acoustic wave resonator further includes pad layer 9, which includes the first pad 91,92 He of the second pad
Third pad 93, the pad layer is located on the second part of the upper electrode layer, the first part and second of the first lower electrode
On the Part V of lower electrode, the second part of the upper electrode layer, the first part of the first lower electrode and the are partially covered
The Part V of two lower electrodes.The thin film bulk acoustic wave resonator further includes bulge-structure, which includes the first protrusion
81 and second protrusion 82.First protrusion is between the top electrode and first piezoelectric film and is located at described power on
The wherein one end of the second part of pole layer.It is described second protrusion between the upper electrode layer and second piezoelectric film,
And it is located at wherein the other end of the second part of the upper electrode layer.
The centre-pillar structure includes: the upper electrode layer with substrate transverse part 61, the wall with
The part of the substrate transverse, the piezoelectric layer with the part of the substrate transverse and the lower electrode layer and the lining
The straight and part close to the wall of dolly (Part IV of the i.e. first lower electrode).
The material of the substrate is silicon or the material with low thermal conduction characteristic；The material of the sacrificial layer includes but not
It is limited to silica, silicon phosphorus glass (PSG) etc.；The material of the lower electrode layer and upper electrode layer is conductive material, such as with half
The compatible aluminium of semiconductor process, molybdenum, copper, gold, platinum, silver, nickel, chromium, tungsten etc.；The material of the piezoelectric layer includes but is not limited to nitrogenize
Aluminium, oxidisability etc.；The material of the wall is dielectric material, such as PSG or other materials for being not easy to be etched；It is described
Pad is high conductive material, such as the aluminium with semiconductor technology compatibility, copper, gold, platinum, silver, nickel, chromium, etc..
Effective resonance range of the resonator is located in disk, the region of top electrode and lower electrode face.And in center pillar
In region, wall is introduced, to reduce the influence of upper/lower electrode parasitic capacitance in the region, while completely cutting off upper/lower electrode.Such as
This, does not occur resonance in newel area, is displaced very little, is transmitted in device to reduce external forces.Meanwhile it being spaced
Layer at resonance effective coverage edge also naturally forms bulge-structure 8 (bulge-structure is identical as wall material), can will be humorous
Sound wave of the vibration device in edge is reflected back effective coverage, improves the Q value of device.
It should be noted that transverse mode causes humorous as a result, as shown in Fig. 2, center pillar position O deviates the center of disk
Vibration is suppressed, and improves the performance of filter and oscillator.
Fig. 3 is the front section view of the 2nd embodiment film bulk acoustic device of the disclosure.Unlike the 1st embodiment, this reality
Apply example first grown one layer of conductive layer 7 (material be similar to lower electrode) on substrate, then similar with the 1st embodiment, growth with
Each layer afterwards.Different, the lower electrode of the first of device includes two parts, one of them is parallel with the substrate, separately
One with the substrate transverse；Second lower electrode includes a part, parallel with the substrate；The lower electrode and top electrode of device point
It is not drawn by the first conductive film 71 of conductive layer and the second conductive film 72, therefore, which is supported by center pillar completely, further
Reduce stress influence brought by lead-out wire in the 1st embodiment.But also just because of only being supported by center pillar, the reliability of device can
It can be worse than the structure of the 1st embodiment.
In the present embodiment, the centre-pillar structure includes: the upper electrode layer with substrate transverse part 61, described
The part with the substrate transverse of wall, the part with the substrate transverse of the piezoelectric layer and the lower electrode layer
With the substrate transverse and close to the wall part.
Fig. 4 is the front section view of the 3rd embodiment film bulk acoustic device of the disclosure.Unlike the 1st embodiment, to pressure
After electric layer etches, do not retain piezoelectric layer in newel area.The shadow of newel area endoparasitism capacitor can be further decreased in this way
It rings.
Fig. 5 is the front section view of the 4th embodiment film bulk acoustic device of the disclosure.In the 1st embodiment, wall is located at
Between top electrode and piezoelectric layer, and in the 4th embodiment, wall be may be alternatively located between lower electrode and piezoelectric layer.Edge it is convex
Rise structure equally can the sound wave by resonating device in edge be reflected back effective coverage, improve the Q value of device.
Certainly, disclosure device architecture is not limited to disc-shape, can be ellipse, pentagon or other are irregular more
Side shape, but should be avoided as regular polygon, the resonance that can equally reduce transverse mode in this way influences.
Fig. 6 is the 2nd embodiment film bulk acoustic device production method flow chart of the disclosure.Fig. 7 a- Fig. 7 g is that the disclosure the 2nd is real
Apply a film bulk acoustic device manufacturing process schematic diagram.As shown in Fig. 6 and Fig. 7 a-7g, the film bulk acoustic implement body was made
Journey is as follows:
As shown in Figure 7a, conductive layer is deposited in substrate surface first, conductive layer is divided into the first conductive film by graphical treatment
With the second conductive film, for drawing the lower electrode and top electrode of device respectively；
As shown in Figure 7b, deposited sacrificial layer on substrate covers conductive layer, and graphical sacrificial layer, defines center pillar position
It sets.Need to expose a part of conductive layer in newel area to be electrically connected later；
As shown in Figure 7 c, lower electrode layer is deposited, graphical treatment is equally made；Lower electrode layer is set to reserve hole in newel area,
And lower electrode layer is connected with the first conductive film of conductive layer；Before depositing lower electrode layer, generally can first it grow one layer thin
Separation layer, isolation sacrificial layer to the oxygen migration between lower electrode layer.Alternatively, it is also possible to selectivity in lower electrode layer insertion or
Surface grows one layer of temperature compensating layer, and temperature-compensating layer material is the material with positive temperature coefficient such as silica or PSG；
As shown in figure 7d, depositing piezoelectric layer, and make graphical treatment, expose the conductive layer at edge and newel area, so as to
The extraction of top electrode；
As shown in figure 7e, depositing spacer exposes edge and newel area.Retain wall in disk border region simultaneously
Figure, the bulge-structure of formation, can the sound wave by resonating device in edge be reflected back effective resonance range, improve device
Q value；
As depicted in fig. 7f, upper electrode layer is deposited, graphical treatment is made.Top electrode is drawn by the second conductive film of conductive layer
(as shown in the figure).Once top electrode is formed, device forms effective resonance range by the face region of top electrode and lower electrode.Separately
Outside, it can not generally be corroded in upper electrode layer surface growth of passivation layer, guard electrode；
As shown in figure 7g, deposited pad layer makees graphical treatment.The pad includes first on upper electrode layer
On the Part V of the lower electrode of the second pad and second under pad, first on the first part of electrode or first part
Third pad.Disclosure pad structure can reduce connection resistance, while the first pad is located at newel area, can reinforce center pillar
Structure.In addition, the both ends of the first pad are located at the boundary of resonance effective district, can the sound wave by resonating device in edge reflect
Effective resonance range is returned, the Q value of device is improved；
As shown in Fig. 7 h, device is placed in corrosive liquid, sacrificial layer is etched away, dispensing device.Finally, device is only in
Rod structure support, can reduce effect of the extraneous stress to device.
Disclosure technique is relatively easy, does not need to chemically-mechanicapolish polish sacrificial layer (CMP) processing, can also reduce life
Long number of layers, this is all reduced the production cost.
In addition, the disclosure additionally provides a kind of filter comprising cascade multiple thin film bulk acoustic wave resonator.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail it is bright, it is all it should be understood that be not limited to the disclosure the foregoing is merely the specific embodiment of the disclosure
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
So far, attached drawing is had been combined the embodiment of the present disclosure is described in detail.According to above description, art technology
Personnel should have clear understanding to the disclosure.
It should be noted that in attached drawing or specification text, the implementation for not being painted or describing is affiliated technology
Form known to a person of ordinary skill in the art, is not described in detail in field.In addition, the above-mentioned definition to each element and method is simultaneously
It is not limited only to various specific structures, shape or the mode mentioned in embodiment, those of ordinary skill in the art can carry out letter to it
It singly changes or replaces.
Certainly, according to actual needs, the step of method of disclosure also includes other, due to the same disclosure innovation without
It closes, details are not described herein again.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail bright, it should be understood that the foregoing is merely the specific embodiment of the disclosure, be not limited to the disclosure, it is all
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the protection of the disclosure
Within the scope of.
Claims (11)
1. a kind of thin film bulk acoustic wave resonator, comprising:
Substrate, and
Piezo-electric stack structure is formed on the substrate；
Wherein, it is formed with centre-pillar structure in the eccentric position of the thin film bulk acoustic wave resonator, around the centre-pillar structure
It is formed with cavity.
2. thin film bulk acoustic wave resonator according to claim 1, wherein the piezo-electric stack structure include lower electrode layer,
Upper electrode layer and the piezoelectric layer between the lower electrode layer and upper electrode layer；The lower electrode and the substrate surround institute
State cavity.
3. thin film bulk acoustic wave resonator according to claim 1, wherein the piezo-electric stack structure include lower electrode layer,
Upper electrode layer and the piezoelectric layer between the lower electrode layer and upper electrode layer；The thin film bulk acoustic wave resonator further includes
The conductive layer being formed between the substrate and the lower electrode layer, between the lower electrode and the conductive layer described in formation
Cavity.
4. thin film bulk acoustic wave resonator according to claim 2, wherein
The lower electrode layer includes the first lower electrode and the second lower electrode；
Described first lower electrode includes the first part being sequentially connected, second part, Part III and Part IV, wherein the
A part and Part IV and the substrate contact, and first part and Part III prolong along the direction for being parallel to the substrate
It stretches, second part and Part IV extend along the direction perpendicular to the substrate；
Described second lower electrode includes the first part being sequentially connected, second part, Part III, Part IV and the 5th
Point, wherein the first part of the described second lower electrode and Part V and the substrate contact, and the of the described second lower electrode
A part, Part III and Part V extend along the direction for being parallel to the substrate, the second part of the described second lower electrode
Extend with Part IV along the direction perpendicular to the substrate.
5. thin film bulk acoustic wave resonator according to claim 4, wherein
The piezoelectric layer includes the first piezoelectric film and the second piezoelectric film, and the of the first lower electrode is completely covered in first piezoelectric film
Four parts and the Part III for being completely covered or partially covering the first lower electrode；
The second piezoelectricity membrane part covers the first part of the described second lower electrode, and the of the described second lower electrode is completely covered
Two parts, and it is completely covered or partially covers the Part III of the second lower electrode.
6. thin film bulk acoustic wave resonator according to claim 5, wherein the upper electrode layer includes:
First part extends along the direction perpendicular to substrate, bottom simultaneously with the substrate and the second lower electrode the
A part contact, and the first part of the upper electrode layer is between first piezoelectric film and the second piezoelectric film；
Second part is located on the piezoelectric layer, extends along the direction for being parallel to the substrate.
7. thin film bulk acoustic wave resonator according to claim 6 further includes wall, which includes the first spacer film
With the second spacer film；
First spacer film is between first piezoelectric film and the upper electrode layer, and bottom and the substrate contact；
Second spacer film is between second piezoelectric film and the upper electrode layer, and the of bottom and the described second lower electrode
A part contact；Or
Under first spacer film is located at described first between electrode and first piezoelectric film, and bottom connects with the substrate
Touching；Second spacer film is located between the described second lower electrode and second piezoelectric film, and electricity under bottom and described second
The first part of pole contacts.
8. thin film bulk acoustic wave resonator according to claim 5 further includes the first protrusion and the second protrusion；
Second part of first protrusion between the upper electrode layer and first piezoelectric film and positioned at the upper electrode layer
Wherein one end；Or first protrusion be located between first piezoelectric film and the Part III of the first lower electrode and be located at institute
State the one end of the first piezoelectric film；
Second protrusion is between the upper electrode layer and second piezoelectric film and is located at the second of the upper electrode layer
Partial wherein the other end；Or second protrusion be located between second piezoelectric film and the Part III of the second lower electrode and
Positioned at the one end of second piezoelectric film.
9. thin film bulk acoustic wave resonator according to claim 5 further includes pad layer, it is located at the upper electrode layer and described
On lower electrode layer.
Thin film bulk acoustic wave resonator according to claim 5, wherein the pad layer part covers the upper electrode layer
Part V or the first part of second part, the first part of the first lower electrode and the second lower electrode.
10. a kind of production method of thin film bulk acoustic wave resonator, comprising:
Growth sacrificial layer and graphical treatment on substrate form the first open area；
Growth lower electrode layer simultaneously etches lower electrode layer, forms the second open area in first open area；
Grow piezoelectric layer and upper electrode layer；
Upper electrode layer is etched, and etches piezoelectric layer, forms third open area in second open area；
Etching removes the sacrificial layer, between the lower electrode and the substrate, the thin film bulk acoustic wave resonator it is effective
Resonance range forms cavity.
11. a kind of filter comprising cascade multiple thin film bulk acoustic wave resonator as described in any one of claim 1-8.
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| CN111313860A (en) * | 2019-11-29 | 2020-06-19 | 天津大学 | Bulk acoustic wave resonator, filter and electronic device with protective structure layer |
| CN111865249A (en) * | 2019-04-29 | 2020-10-30 | 中国科学院半导体研究所 | Resonant structure and manufacturing method thereof |
| WO2020238508A1 (en) * | 2019-05-31 | 2020-12-03 | 天津大学 | Bulk acoustic resonator having separated additional structure and top electrode, filter, and electronic device |
| CN113258900A (en) * | 2021-06-23 | 2021-08-13 | 深圳汉天下微电子有限公司 | Bulk acoustic wave resonator assembly, preparation method and communication device |
| WO2021248539A1 (en) * | 2020-06-12 | 2021-12-16 | 瑞声声学科技(深圳)有限公司 | Piezoelectric structure and piezoelectric apparatus |
| CN114499445A (en) * | 2022-04-01 | 2022-05-13 | 深圳新声半导体有限公司 | Bulk acoustic wave filter, manufacturing method thereof and communication device |
| CN117375568A (en) * | 2023-12-07 | 2024-01-09 | 常州承芯半导体有限公司 | Bulk acoustic wave resonator device and method for forming bulk acoustic wave resonator device |
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| CN111865249A (en) * | 2019-04-29 | 2020-10-30 | 中国科学院半导体研究所 | Resonant structure and manufacturing method thereof |
| CN111865249B (en) * | 2019-04-29 | 2023-06-06 | 中国科学院半导体研究所 | Resonant structure and manufacturing method thereof |
| WO2020238508A1 (en) * | 2019-05-31 | 2020-12-03 | 天津大学 | Bulk acoustic resonator having separated additional structure and top electrode, filter, and electronic device |
| CN111313860A (en) * | 2019-11-29 | 2020-06-19 | 天津大学 | Bulk acoustic wave resonator, filter and electronic device with protective structure layer |
| CN111313860B (en) * | 2019-11-29 | 2023-05-12 | 天津大学 | Bulk acoustic resonator with protective structure layer, filter and electronic device |
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| CN113258900A (en) * | 2021-06-23 | 2021-08-13 | 深圳汉天下微电子有限公司 | Bulk acoustic wave resonator assembly, preparation method and communication device |
| CN114499445A (en) * | 2022-04-01 | 2022-05-13 | 深圳新声半导体有限公司 | Bulk acoustic wave filter, manufacturing method thereof and communication device |
| CN114499445B (en) * | 2022-04-01 | 2023-05-26 | 深圳新声半导体有限公司 | Bulk acoustic wave filter, manufacturing method thereof and communication device |
| CN117375568A (en) * | 2023-12-07 | 2024-01-09 | 常州承芯半导体有限公司 | Bulk acoustic wave resonator device and method for forming bulk acoustic wave resonator device |
| CN117375568B (en) * | 2023-12-07 | 2024-03-12 | 常州承芯半导体有限公司 | Bulk acoustic wave resonator device and method for forming bulk acoustic wave resonator device |
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| CN109687835B (en) | 2020-07-17 |
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