CN102509844A - Micro-electromechanical disc resonator and manufacturing method thereof - Google Patents
Micro-electromechanical disc resonator and manufacturing method thereof Download PDFInfo
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- CN102509844A CN102509844A CN2011102834521A CN201110283452A CN102509844A CN 102509844 A CN102509844 A CN 102509844A CN 2011102834521 A CN2011102834521 A CN 2011102834521A CN 201110283452 A CN201110283452 A CN 201110283452A CN 102509844 A CN102509844 A CN 102509844A
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Abstract
The invention relates to a micro-electromechanical disc resonator and a manufacturing method thereof. The manufacturing method comprises the following steps of: firstly, manufacturing an anchor point for fixing a resonant oscillator on a substrate silicon wafer and a concave cavity for releasing a resonant oscillator structure; bonding a device structure layer on the substrate silicon wafer; thinning the structure layer and manufacturing a metal bonding pad; manufacturing a device structure of the resonator on the structure layer by utilizing dry-process etching; and finally aligning and bonding vacuum wafers so as to fix a cover plate silicon wafer above a structure silicon wafer, so that the wafer level vacuum packaging of the resonator is realized. The manufactured anchor point of the resonator is located on a node of the oscillator, so that energy loss caused by the anchor point can be greatly reduced; and the wafer level vacuum packaging is carried out on the resonator, so that a resonator structure is prevented from being lost due to physical impacts of outside environment, and the performances of the resonator are improved. The micro-electromechanical disc resonator is suitable to being produced in batch, and since the design of the anchor points is optimized and the wafer level vacuum packaging technology is adopted, the manufacturing of the bulk silicon resonator with low cost and high performances is realized.
Description
Technical field
The invention belongs to micromechanical resonator processing and Micrometer-Nanometer Processing Technology field, particularly a kind of micromechanics disk resonator and manufacture method.
Background technology
Clock chip has important effect as the time reference source in the Circuits System in Circuits System.Traditional clock chip generally adopts quartz crystal oscillator to produce signal waveform as resonator.But quartz crystal oscillator generally is to adopt cutting technique to make, so its volume is difficult to reduce, thereby has hindered the microminiaturization of Circuits System.In addition, quartz crystal oscillator also can't with the integrated making of Circuits System, improved cost of manufacture.In recent years, because the development of micro-processing technology, the MEMS micromechanical resonator obtains very big development.The MEMS resonator has that size is little, power consumption is little, cost is low, with CMOS IC (Complementary Metal Oxide Semiconductor Integrated Circuit; Complementary mos integrated circuit) technology advantage such as compatibility mutually; Demand in fields such as wireless telecommunications grows with each passing day, and will become the substitute of crystal resonator.
The vertical acoustic wave micromechanical resonator of body silicon is the resonance that utilizes the compressional wave resonance mode characteristic realization device of body silicon resonance oscillator structure.Fig. 1-1 (a) is the basic principle schematic of circular slab resonator works, and Fig. 1-1 (b) is the sketch map that the circular slab bulk silicon micro mechanic resonator is operated in Extensional mode.Its oscillator is a circular sheet, and the plectane both sides are respectively drive electrode and detecting electrode.When between drive electrode and oscillator, applying alternating voltage, the electrostatic force that is produced by alternating voltage will encourage oscillator to get into the mode of resonance of appointment.Oscillator will be followed driving electrostatic force and done stretching motion like this, thereby causes changes in capacitance between oscillator and the detecting electrode.Thereby, through detecting changes in capacitance between oscillator and the detecting electrode, just can resonator signal be exported.
The key property parameter of micromechanical resonator has: resonance frequency, quality factor (Q), frequency temperature are floated etc.Wherein, the Q value of resonator is one of most important parameter of reaction resonator characteristics, and it can be expressed as:
Wherein Q is the total quality factor size of resonator, Q
AirBe the energy loss mechanism that causes by air damping, Q
AnchorBe the energy loss mechanism that causes by anchor point, Q
TEDBe the thermoelasticity energy loss mechanism of material, Q
OthersThe energy loss mechanism of representing other.In these four kinds of energy loss mechanism, back three kinds is to be caused by factors such as the material of making resonator and structural designs thereof, and first kind to be vacuum degree by the resonator works environment cause.Resonator is carried out vacuum seal; Just can reduce consumption greatly because the energy that air damping causes looses; Thereby improve the Q value (Khine of resonator greatly; L and M Palaniapan, High-Q bulk-mode SOI square resonators with straight-beam anchors.Journal of Micromechanics and Microengineering, 2009.19 (1): p.015017).
The energy loss that anchor point causes also is one of key factor that influences resonator Q value.The main foundation that reduces the anchor point loss is: the minimum position of displacement, the just node location of oscillator when oscillator resonance should be designed in the anchor point position.For the circular slab resonator of Extensional mode, its node location is positioned at the center of disk.When anchor point is positioned at the oscillator center, exist design difficulty high, problem such as difficulty of processing is big.Therefore, traditional micromechanical resonator all is through the oblique straining beam around the oscillator that oscillator is fixing.
Traditional micromechanical resonator generally comes releasing structure through the substrate of wearing quarter under the resonance oscillator, its complex process, and follow-up packaging technology difficulty is big.Tradition monocrystalline silicon resonator utilizes the oblique straining beam around the oscillator to fix structure usually, and the energy loss that causes of anchor point is bigger like this, is unfavorable for the raising of total Q value of resonator.In addition, need the pad of the pad on the structure silicon chip on the cover plate silicon chip be carried out electricity interlinkage to the encapsulation of micromechanical resonator.Traditional method is to adopt TSV (Through Silicon Vias, silicon through hole) directly the pad on the structure silicon chip to be drawn out on the cover plate silicon chip from the silicon through hole.Yet the TSV difficulty of processing is big, and rate of finished products is low, and processing cost is high.
Summary of the invention
Problem to existing in traditional micromechanical resonator processing the objective of the invention is to propose a kind of micromechanical resonator and manufacture method, in order to utilize simple technology and less cost, realizes the making of micromechanical resonator and the vacuum seal of device.
A kind of resonator manufacture method of the present invention, this resonator are to be bonded together by silicon substrate (11), structure silicon chip (21) and cover plate silicon chip (31) to form, and specifically may further comprise the steps:
1) etches the anchor point (12) that is used for fixing resonance oscillator (23) in the front of silicon substrate (11);
2), anchor point (12) positive at silicon substrate is formed for first cavity (13) that structure discharges and form vacuum chamber on every side;
3) in step 2) body structure surface that obtains afterwards deposits the first electric insulating medium layer (14);
4) with silicon substrate (11) positive with structure silicon chip (21) back side bonding, and the reduced thickness of structure silicon chip (21) arrived the required thickness of micromechanical resonator;
5) the deposition the first metal layer in the front of structure silicon chip (21), and with this metallic layer graphic is produced contacted first metal pad of second metal pad (35) (24) on the silicon salient point (32) with cover plate silicon chip (31);
6) the etching structure silicon chip (21) from the front discharges the resonator structure that comprises resonance oscillator (23) resonator electrode (22);
7) groove structure (33) of making second cavity (37) and silicon salient point (32) and being used for the bonding scolder at cover plate silicon chip (31) back side; Said first cavity (13) constitutes vacuum chamber with second cavity (37), and resonator oscillator (32) is arranged in this vacuum chamber;
8) on the structure that step 7) obtains, deposit the second electric insulating medium layer (34) and second metal level successively,, form metal lead wire and second metal pad (35) then with this second metallic layer graphic;
9) in said groove structure (33), form bonding scolder (36);
10) structure that obtains after the step 6) is carried out cryogenic vacuum with the cover plate silicon chip (31) that comprises metal lead wire and metal pad (35) and bonding scolder (36) and aim at bonding;
11) carry out scribing at the silicon substrate back side, expose second metal pad (35) at cover plate silicon chip (31) back side.
As one of preferred version of the present invention, said step 2) and step 7) adopt the method for wet etching or dry etching to make cavity.
As one of preferred version of the present invention, adopt metal, polymer or compound bonding coat to aim at bonding in silicon substrate (11) front and structure silicon chip (21) back side in the said step 4).
As one of preferred version of the present invention, adopt the method or the wet etching of chemical machinery to carry out attenuate to the required thickness of resonator structure the structure wafer thinning in the said step 4).
As one of preferred version of the present invention, the structure disk is aimed at bonding and is adopted glass paste, polymer or metal-to-metal adhesive in the said step 10) with cover plate disk cryogenic vacuum.
The present invention also provides a kind of micromechanical resonator, and this micromechanical resonator comprises the silicon substrate (11) that is provided with first cavity (13), and this first cavity (13) middle part is provided with the anchor point (12) that is used for fixing resonance oscillator (23); This silicon substrate (11) is provided with the first electric insulating medium layer (14);
Be provided with the structure silicon chip (21) of first metal pad (24), this structure silicon chip is etched to the resonator structure that comprises resonance oscillator (23) resonator electrode (22);
The cover plate silicon chip (31) that is provided with second cavity (37) and silicon salient point (32) and is used for the groove structure (33) of bonding scolder (36) is provided with the second electric insulating medium layer (34) and metal lead wire and second metal pad (35) successively on this cover plate silicon chip (31); Said first cavity (13) constitutes vacuum chamber with second cavity (37), and resonator oscillator (32) is arranged in this vacuum chamber; Said cover plate silicon chip (31) is through bonding scolder (36) and first metal pad (24) and structure silicon chip (21) bonding.
As one of preferred version of the present invention, be provided with some patterned bonding coats (25) between said first electric insulating medium layer (14) and the structure silicon chip (21).
As one of preferred version of the present invention, the groove structure (33) that is used for bonding scolder (36) is distributed in one week of the outside of said second cavity (37).
As one of preferred version of the present invention, said bonding scolder (36) width is less than the width of groove structure (33).
As one of preferred version of the present invention, the cross section of said resonance oscillator (23) is square plate, circular slab or girder construction.
As one of preferred version of the present invention, the anchor point (12) that is used to support resonator oscillator (23) is circular columns or square column.
As one of preferred version of the present invention, the material of said first, second electric insulating medium layer is silica or silicon nitride.
Compare with the structure of general micromechanical resonator:
The micromechanical resonator that the present invention proposes is processed through wafer level vacuum aligning bonding by silicon substrate, structure silicon chip and three layers of silicon chip of cover plate silicon chip;
Has curved cavity on the silicon substrate of the micromechanical resonator that the present invention proposes and the cover plate silicon chip;
Has the anchor point structure on the micromechanical resonator silicon substrate that the present invention proposes;
Have silicon salient point and bonding solder structure on the cover plate silicon chip of the micromechanical resonator that the present invention proposes.
Compare with general micromechanical resonator manufacture method:
The manufacture method of the micromechanical resonator that the present invention proposes before making device architecture, has been made anchor point structure and curved cavity on silicon substrate;
The manufacture method of the micromechanical resonator that the present invention proposes in the device architecture that completes, also discharges device architecture;
The micromechanical resonator that the present invention proposes utilizes dry etching to make the device gap and discharges device architecture, does not exist the structure that exists in the structure dispose procedure to be prone to problems such as glutinous company, the movable structure that needs protection, and has simplified processing technology, has improved rate of finished products.
The present invention utilizes the silicon salient point implementation structure silicon chip on the cover plate silicon chip to be connected with the direct electricity of cover plate silicon chip, simplicity of design, and the processing technology difficulty is low.
The obvious characteristics of the present invention is: on silicon substrate, produce anchor point and curved cavity in advance; When making resonator structure, realize the release of device architecture subsequently; And utilize the silicon salient point on the cover plate silicon chip, the electricity interlinkage on realizing from the structure silicon chip to the cover plate silicon chip through thermocompression bonding.
Because the processing method that the present invention proposes has just discharged device architecture when the resonator structure fabrication is accomplished, need not follow-up release process, has reduced process complexity; Bonding through utilizing common silicon chip is made device, has reduced cost; Adopt the dry etching releasing structure, do not have the glutinous problem that connects of structure sheaf and substrate; Device is carried out the wafer level Vacuum Package, not only improved device performance, reduced cost, and be applicable to batch process.
Description of drawings
Fig. 1 (a) is a circular slab resonator works sketch map; Fig. 1 (b) is the circular slab resonator works mode sketch map of Extensional mode.
Fig. 2 is the concrete technological process of specific embodiment of the invention embodiment 1.
Fig. 2-the 1st, the present invention is in the positive fixedly anchor point structure of resonance oscillator of making of silicon substrate.
Fig. 2-the 2nd, the present invention is at the positive cavity that is used to discharge device architecture of making of silicon substrate.
Fig. 2-the 3rd, the present invention is at the positive deposition of silicon substrate one deck electric insulating medium layer.
Fig. 2-the 4th, the electric insulating medium layer that patterned substrate silicon chip of the present invention is positive exposes the fixedly anchor point of resonance oscillator oscillator.
Fig. 2-the 5th, the present invention is bonded together the silicon substrate front with the structure silicon chip back side, and attenuate is carried out in structure silicon chip front.
Fig. 2-the 6th, the present invention is depositing metal layers in structure silicon chip front, and makes metal pad.
Fig. 2-the 7th, the present invention utilize deep reaction ion etching technology, etch the resonator structure in structure silicon chip front.
Fig. 2-the 8th, the present invention make at the cover plate silicon chip back side and are used for the silicon bump structure that pad shifts.
Fig. 2-the 9th, the present invention make the groove structure that is used to apply binder at the cover plate silicon chip back side.
Fig. 2-the 10th, the present invention is at cover plate silicon chip backside deposition one deck electric insulating medium layer.
Fig. 2-the 11st, the present invention are at cover plate silicon chip backside deposition metal level, and making metal lead wire and metal pad.
Fig. 2-the 12nd, the present invention apply the bonding scolder in the groove of the cover plate silicon chip back side, and to preliminary treatment such as it are cured.
Fig. 2-the 13rd, the present invention carries out wafer level vacuum aligning bonding with structure silicon chip and cover plate silicon chip.
Fig. 2-the 14th, the present invention carries out scribing at the silicon substrate back side, exposes the metal pad at the cover plate silicon chip back side.
Fig. 3 a is the cross-sectional view of another angle of specific embodiment of the invention circular slab resonator; Fig. 3 b is the structure chart that is looked up by Fig. 3 a middle section A-B.
Fig. 4 is the resulting devices structure of the embodiment of the invention 2.
The main element symbol description:
The 11-silicon substrate; 12-is the anchor point of resonance oscillator fixedly; Cavity on the 13-silicon substrate; The electric insulating medium layer that the 14-silicon substrate is positive; 21-structure silicon chip; The 22-resonator electrode; 23-resonance oscillator; Metal pad on the 24-structure silicon chip; The 25-bonding coat; 31-cover plate silicon chip; Silicon salient point on the 32-cover plate silicon chip; 33-bonding solder; The electric insulating medium layer at the 34-cover plate silicon chip back side; The metal lead wire and the metal pad at the 35-cover plate silicon chip back side; 36-bonding scolder; Cavity on the 37-cover plate silicon chip.
With the resulting devices structure is reference, and structure silicon chip, silicon substrate and cover plate silicon chip one side up are that silicon chip is positive, and one side down is the silicon chip back side.Show like Fig. 2-14.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is carried out detailed description.
See also Fig. 3, shown in Figure 4; The resonator that the present invention proposes is formed by silicon substrate 11, structure silicon chip 21 and 31 3 layers of wafer bonding of cover plate silicon chip together; The back side of the front of silicon substrate 11 and structure silicon chip 21, the front of structure silicon chip 21 is aimed at bonding through wafer level respectively with the back side of cover plate silicon chip 31 and is sticked together; Structure silicon chip 21 is between silicon substrate 11 and cover plate silicon chip 31; In the vacuum chamber that second cavity 37 of unsettled first cavity 13 and the cover plate silicon chip 31 at silicon substrate 11 of resonance oscillator 23 is formed.The resonance oscillator 23 of resonator, drive electrode and detecting electrode 22 structures are positioned on the structure silicon chip 21 among the present invention; Structure silicon chip 21 is positioned at the top of silicon substrate 11, and resonance oscillator 23 is supported on directly over the substrate cavity by the anchor point on the silicon substrate 11 23.
The structure silicon chip 21 of this resonator is provided with first metal pad 24, and this structure silicon chip is etched to the resonator structure that comprises resonance oscillator 23 resonator electrodes 22.
These resonator cover plate silicon chip 31 back sides have and are used to form second curved cavity 37 of vacuum chamber and the groove 33 of bonding welding pad 36; Second cavity 37 is in directly over the resonator, and the groove 33 of bonding scolder 36 is distributed in one week of the outside of second cavity 37 of cover plate silicon chip 31; Cover plate silicon chip 31 back sides have silicon salient point 32 structures; At groove 33, the second cavitys 37 at cover plate silicon chip 31 back sides and the second electric insulating medium layer 34 is arranged above the silicon salient point 32; The back side of cover plate silicon chip 31 has one deck and realizes and the extraneous patterned metal level that is electrically connected that layer metal deposition is on the second electric insulating medium layer 34; On the silicon salient point 32 of cover plate silicon chip 31 metal pad 35 is arranged; Silicon salient point 32 be positioned at first metal pad 24 on the structure silicon chip 21 directly over; When cover plate silicon chip 31 and structure silicon chip 21 bondings; Second metal pad 35 that covers on the silicon salient point 32 closely contacts with first metal pad 24 on the structure silicon chip 21, thereby implementation structure silicon chip 21 is to the electrical connection of cover plate silicon chip 31; The back side of cover plate silicon chip 31 has the patterned bonding scolder 36 of a circle, and bonding scolder 36 is in second groove 33 of cover plate silicon chip 31 bonding scolders, and it is positioned on the metal level, and width is less than second recess width.
Resonance oscillator structure can be square plate, circular slab among the present invention, can be girder construction also, and be not limited thereto.The anchor point that supports resonator oscillator structure can be a circular columns, can be square column also, and be not limited thereto.Silicon substrate electric insulating medium layer positive and the cover plate silicon chip back side can be a silica, can be silicon nitride also, and be not limited thereto.
Anchor point among the present invention on the silicon substrate and cavity just completed before resonator structure completes.The release of the making resonator device architecture of resonator structure is accomplished simultaneously.Can adopt the method for wet etching or dry etching to make substrate cavity and cover plate curved cavity, and be not limited thereto.Being used for silicon substrate, aim at the bonding coat of bonding with structure silicon chip disk can be metal, can be polymer or compound also, and be not limited thereto.The structure wafer thinning to the required thickness of resonator structure, can be adopted the method for chemical machinery, perhaps use wet etching to carry out attenuate, and be not limited thereto.Being used for the structure disk, aim at the binder of bonding with cover plate disk cryogenic vacuum can be glass paste, can be polymer or metal also, and be not limited thereto.Method through scribing is scratched the scribe line on the silicon substrate; After exposing the metal pad on the cover plate silicon chip; Through the method for scribing the resonator element on the disk is separated again; Scribing this moment should be carried out on X direction and y direction respectively, and scribing thickness is the thickness of bonding pad.
Embodiment 1
Structure silicon chip, silicon substrate are selected low resistance silicon chip for use, and resistivity is 0.01-1 Ω cm, and the resistivity of cover plate silicon chip does not require.Silicon substrate is used for making the fixedly anchor point of resonance oscillator and the cavity of releasing structure.Fixedly the anchor point structure of oscillator can be a circular columns, also can be square column.The structure silicon chip is used for making resonance oscillator structure, and the resonance oscillator can be a circular slab, also can be square plate.Being deposited on silicon substrate electric insulating medium layer positive and the cover plate silicon chip back side can be silica, also can be silicon nitride.(the bonding scolder can be a glass paste to apply last layer bonding scolder in the method for cover plate silicon chip back through silk screen printing; Polymer or metal); And the bonding scolder is graphical, adopt the wafer level vacuum to aim at bonding then itself and structure silicon chip are sticked together.Resonator has been realized the transfer of metal pad from the structure silicon chip to the cover plate silicon chip through the silicon salient point on the cover plate silicon chip.The main technique step comprises:
(1) on the heavily doped monocrystalline silicon piece of polishing,, is constructed for the fixedly anchor point of resonance oscillator in the silicon substrate front through the etching technics of oxidation, photoetching, silicon.See Fig. 2-1.
(2) etch the cavity that is used for discharging resonator structure in the silicon substrate front.See Fig. 2-2.
(3) the positive deposition of the silicon substrate one deck electric insulating medium layer that obtains in step (2).See Fig. 2-3.
(4) the positive electric insulating medium layer of silicon substrate that step (3) is obtained carries out graphically exposing the anchor point structure.See Fig. 2-4.
(5) the silicon substrate front that step (4) is obtained is bonded together with the structure silicon chip back side, and in structure silicon chip front the structure wafer thinning is arrived required thickness.See Fig. 2-5.
The front depositing metal layers of the bonding disk that (6) obtains in step (5), and it is graphical through technologies such as photoetching, corrosion of metals, the structure silicon chip positive make with the cover plate silicon chip on the contacted metal pad of pad.See Fig. 2-6.
(7), produce resonator structure in the bonding disk front that obtains of step (6) through technologies such as photoetching, deep reaction ion etchings.See Fig. 2-7.
(8) at the cover plate silicon chip back side, produce the silicon bump structure through the etching process of oxidation, photoetching, silicon.See Fig. 2-8.
(9) erode away the groove structure that is used for applying bonding welding pad at the cover plate silicon chip back side that step (8) obtains.See Fig. 2-9.
(10) the cover plate silicon chip backside deposition one deck electric insulating medium layer that obtains in step (9).See Fig. 2-10.
(11) the cover plate silicon chip back depositing metal layers that obtains in step (10), and through technologies such as photoetching, corrosion of metals that it is graphical.See Fig. 2-11.
(12) method through silk screen printing applies the patterned bonding scolder of last layer at the cover plate silicon chip back side that step (11) obtains, and the para-linkage scolder carries out sintering processes then.See Fig. 2-12.
(13) low-temperature round slice is carried out with the cover plate silicon chip back side in the step (12) in the bonding disk front that comprises resonator structure in the step (7) under vacuum and aim at bonding, the bonding temperature scope is 300-500 ℃.See Fig. 2-13.
(14) the bonding disk that step (13) is obtained carries out scribing through scribing machine at resonator chip substrate scribe line place, and the metal pad on the cover plate silicon chip is exposed, and the scribing THICKNESS CONTROL is the thickness of silicon substrate.
(15) the bonding disk in the step (14) is carried out scribing through scribing machine on transverse axis and y direction, resonator element is separated, obtain the bulk silicon micro mechanic resonator chip, the device architecture that obtains is seen Fig. 2-13.
Embodiment 2
Present embodiment practical implementation step part is identical with embodiment 1, and the main distinction is: the first, in embodiment 1 step (4) afterwards, deposit one deck bonding coat respectively in the silicon substrate front and the structure silicon chip back side again, and respectively that it is graphical; The second, in embodiment 1 step (5), wafer level vacuum aligning bonding is carried out in the patterned silicon substrate front and the structure silicon chip back side.All the other processing steps are constant.The resulting devices geometric configuration is as shown in Figure 4.
Above-mentioned description to embodiment is can understand and use the present invention for ease of the those of ordinary skill of this technical field.The personnel of skilled obviously can easily make various modifications to these embodiment, and needn't pass through performing creative labour being applied in the General Principle of this explanation among other embodiment.Therefore, the invention is not restricted to the embodiment here, those skilled in the art should be within protection scope of the present invention for improvement and modification that the present invention makes according to announcement of the present invention.
Claims (12)
1. a resonator manufacture method is characterized in that, this resonator is to be bonded together by silicon substrate (11), structure silicon chip (21) and cover plate silicon chip (31) to form, and specifically may further comprise the steps:
1) etches the anchor point (12) that is used for fixing resonance oscillator (23) in the front of silicon substrate (11);
2), anchor point (12) positive at silicon substrate is formed for first cavity (13) that structure discharges and form vacuum chamber on every side;
3) in step 2) body structure surface that obtains afterwards deposits the first electric insulating medium layer (14);
4) with silicon substrate (11) positive with structure silicon chip (21) back side bonding, and the reduced thickness of structure silicon chip (21) arrived the required thickness of micromechanical resonator;
5) the deposition the first metal layer in the front of structure silicon chip (21), and with this metallic layer graphic is produced contacted first metal pad of second metal pad (35) (24) on the silicon salient point (32) with cover plate silicon chip (31);
6) the etching structure silicon chip (21) from the front discharges the resonator structure that comprises resonance oscillator (23) resonator electrode (22);
7) groove structure (33) of making second cavity (37) and silicon salient point (32) and being used for the bonding scolder at cover plate silicon chip (31) back side; Said first cavity (13) constitutes vacuum chamber with second cavity (37), and resonator oscillator (32) is arranged in this vacuum chamber;
8) on the structure that step 7) obtains, deposit the second electric insulating medium layer (34) and second metal level successively,, form metal lead wire and second metal pad (35) then with this second metallic layer graphic;
9) in said groove structure (33), form bonding scolder (36);
10) structure that obtains after the step 6) is carried out cryogenic vacuum with the cover plate silicon chip (31) that comprises metal lead wire and metal pad (35) and bonding scolder (36) and aim at bonding;
11) carry out scribing at the silicon substrate back side, expose second metal pad (35) at cover plate silicon chip (31) back side.
2. resonator manufacture method according to claim 1 is characterized in that, said step 2) and step 7) adopt the method for wet etching or dry etching to make cavity.
3. resonator manufacture method according to claim 1 is characterized in that, adopts metal, polymer or compound bonding coat to aim at bonding in silicon substrate (11) front and structure silicon chip (21) back side in the said step 4).
4. resonator manufacture method according to claim 1 is characterized in that, adopts the method or the wet etching of chemical machinery to carry out attenuate to the required thickness of resonator structure the structure wafer thinning in the said step 4).
5. resonator manufacture method according to claim 1 is characterized in that, the structure disk is aimed at bonding and adopted glass paste, polymer or metal-to-metal adhesive in the said step 10) with cover plate disk cryogenic vacuum.
6. micromechanical resonator, it is characterized in that: this micromechanical resonator comprises the silicon substrate (11) that is provided with first cavity (13), this first cavity (13) middle part is provided with the anchor point (12) that is used for fixing resonance oscillator (23); This silicon substrate (11) is provided with the first electric insulating medium layer (14);
Be provided with the structure silicon chip (21) of first metal pad (24), this structure silicon chip is etched to the resonator structure that comprises resonance oscillator (23) resonator electrode (22);
The cover plate silicon chip (31) that is provided with second cavity (37) and silicon salient point (32) and is used for the groove structure (33) of bonding scolder (36) is provided with the second electric insulating medium layer (34) and metal lead wire and second metal pad (35) successively on this cover plate silicon chip (31); Said first cavity (13) constitutes vacuum chamber with second cavity (37), and resonator oscillator (32) is arranged in this vacuum chamber; Said cover plate silicon chip (31) is through bonding scolder (36) and first metal pad (24) and structure silicon chip (21) bonding.
7. micromechanical resonator according to claim 6 is characterized in that: be provided with some patterned bonding coats (25) between said first electric insulating medium layer (14) and the structure silicon chip (21).
8. micromechanical resonator according to claim 6 is characterized in that: the groove structure (33) that is used for bonding scolder (36) is distributed in one week of the outside of said second cavity (37).
9. micromechanical resonator according to claim 8 is characterized in that: said bonding scolder (36) width is less than the width of groove structure (33).
10. micromechanical resonator according to claim 6 is characterized in that: the cross section of said resonance oscillator (23) is square plate, circular slab or girder construction.
11. micromechanical resonator according to claim 6 is characterized in that: the anchor point (12) that is used to support resonator oscillator (23) is circular columns or square column.
12. micromechanical resonator according to claim 6 is characterized in that: the material of said first, second electric insulating medium layer is silica or silicon nitride.
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