CN101867080B - Bulk silicon micro mechanic resonator and manufacturing method thereof - Google Patents
Bulk silicon micro mechanic resonator and manufacturing method thereof Download PDFInfo
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- CN101867080B CN101867080B CN 201010181105 CN201010181105A CN101867080B CN 101867080 B CN101867080 B CN 101867080B CN 201010181105 CN201010181105 CN 201010181105 CN 201010181105 A CN201010181105 A CN 201010181105A CN 101867080 B CN101867080 B CN 101867080B
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Abstract
The invention relates to a bulk silicon micro mechanic resonator and a manufacturing method thereof. The invention is characterized in that: the resonator is formed by bonding a substrate silicon chip, a structural silicon chip and a cover plate silicon chip, the front side of the substrate silicon chip bonded together with the back side of the structural silicon chip, and the front side of the structural silicon chip is bonded with the back side of the cover plate silicon chip; when the resonator is manufactured, a suspended structure, namely a cavity under a resonant vibration generator, is manufactured first, then an element structural layer is formed above the cavity by bonding, next the element structure of the resonator is released during the manufacturing of the element structure of the resonator by a dry-method erosion, and finally the cover plate silicon chip is fixed above the structural silicon chip by using a vacuum wafer for alignment and bonding. Before the element structure is manufactured, the cavity under the resonator is corroded by a wet method and the wafer package is used for the vacuum sealing of the element.
Description
Technical field
The invention provides a kind of bulk silicon micro mechanic resonator and manufacture method, relate to or rather the body resonistor that the technique such as a kind of MEMS of utilization is made, belong to bulk silicon micro mechanic resonator processing and Micrometer-Nanometer Processing Technology field.
Background technology
Clock chip has important effect as the time base source in the Circuits System in Circuits System.Traditional clock chip generally adopts quartz crystal oscillator to produce signal waveform as resonator.But quartz crystal oscillator generally is to adopt cutting technique to make, so that its volume is difficult to reduce, thereby has hindered the microminiaturization of Circuits System, in addition quartz crystal oscillator also can't with the integrated making of Circuits System, improved cost of manufacture.In recent years, because the development of micro-processing technology, the MEMS micromechanical resonator obtains very large development.The MEMS resonator has that size is little, power consumption is little, cost is low, with CMOS IC (Complementary Metal OxideSemiconductor Integrated Circuit, complementary mos integrated circuit) the technique advantage such as compatible mutually, demand in fields such as wireless telecommunications grows with each passing day, and will become the substitute of crystal resonator.And in micromechanical resonator, body silicon is learned at the top of one's voice wave resonator and is had very high Q value, and higher resonance frequency can be provided.
The vertical acoustic wave micromechanical resonator of body silicon is the resonance that utilizes the compressional wave resonance mode characteristic realization device of body silicon resonance oscillator structure.Three kinds of basic mode of resonator oscillator work are: mode of flexural vibration, distortion mode and phantom attitude.Phantom attitude resonator oscillator can be square plate, Circular Plate or circular slab structure.Fig. 1-1 (a) is the basic mode schematic diagrames of three kinds of resonator works, Fig. 1-1 (b) is phantom attitude resonator resonance oscillator different mode of resonance schematic diagram (Chandorkar when being respectively square plate, Circular Plate and circular slab, S.A., M.Agarwal, et al. (2008). " Limits of quality factor in bulk-modemicromechanical resonators. "
Mems 2008:21st Ieee International Conference on Micro Electro Mechanical Systems, Technical Digest: 74-77).Fig. 1-2 is the fundamental diagram of square plate bulk silicon micro mechanic resonator.Its oscillator is a square thin plate, is respectively drive electrode and detecting electrode around the oscillator, and when adding the alternating voltage of out of phase like this between drive electrode and oscillator, the electrostatic force that is produced by voltage will encourage oscillator to enter the mode of resonance of appointment.Then by detecting the variation of output electrode end output current, just resonator signal can be exported.
Traditional bulk silicon micro mechanic resonator is to use SOI (Silicon-On-Insulator, the silicon on the dielectric substrate) silicon wafer to manufacture, and resonator is comprised of structure sheaf, buried regions silica and substrate silicon.Structure sheaf includes resonator oscillator, electrode, oblique pull beam, metal pad four parts.Silicon substrate under resonator oscillator part can get rid of fully (Khine, L.and M.Palaniapan (2009). " High-Qbulk-mode SOI square resonators with straight-beam anchors. "
Journal of Micromechanics and Microengineering), also can not get rid of (Mattila, T., J.Kiihamaki, et al. (2002). " A 12 MHz micromechanical bulk acoustic modeoscillator. "
Sensors and Actuators a-Physical101 (1-2): 1-9).
The manufacture method of conventional bulk silicon micro mechanic resonator mainly contains following two kinds:
Method 1): at first make metal pad at soi wafer.Then use DRIE (Deep-Reactive-Ion-Etch, deep reaction ion etching) technique to etch the device architecture of resonator.Do protective layer by spin coating PI (Polyimide, polyimides) again, resonator structure is protected, and the silicon of resonator structure layer below is removed by the silicon etching process from the soi wafer substrate back.At last the buried silicon oxide layer of SOI substrate is removed, thereby resonator structure is discharged (Lee, J.E.Y., J.Yan, etal. (2009). " Low loss HF band SOI wine glass bulk mode capacitive square-plateresonator. "
Journal of Micromechanics and Microengineering19 (7)).
Method 2): at first do metal pad at soi wafer.Then use the DRIE processes to go out the device architecture of resonator.Utilize at last wet etching that the buried silicon oxide layer of soi wafer is removed, thereby resonator structure is discharged (Shao, L.and M.Palaniapan (2008). " Effect of etch holes onquality factor of bulk-mode micromechanical resonators. "
Electronics Letters44 (15): 938-940).
There is following problem in these methods of utilizing SOI MEMS technique to make resonator:
The first, the manufacture method of above two kinds of traditional micromechanical resonators all is releasing structure layer after structure sheaf completes, complex process, and cost is high;
The second, method 1) to do protective layer with polyimides, increased difficulty and the complexity of technique;
The 3rd, method 1) device of making is worn because silicon substrate carves fully, therefore is difficult for carrying out wafer-level vacuum package.
The 4th, method 2) when using the buried silicon oxide layer releasing structure of wet etching soi wafer substrate, there is structure sheaf easily and the glutinous fully problem of release that even is difficult for of substrate.
Summary of the invention
For the large and complicated shortcoming such as high of the problem, particularly processing technology difficulty that exist in the processing of general body resonistor, the present invention proposes a kind of bulk silicon micro mechanic resonator manufacture method.
The structural representation of the body resonistor that the present invention proposes as Figure 1-3, the structure of whole device is comprised of seven parts, wherein: 1) have the low resistivity substrate silicon chip of cavity, cavity be in unsettled resonance oscillator under; 2) has the low-resistance structure silicon chip of body resonistor oscillator, drive electrode and detector electrode structure; 3) be in electricity isolated layer between silicon substrate and the structure silicon chip; 4) with the cover plate silicon chip on the contacted metal pad of soldered ball; 5) for the oblique pull brace summer of fixing unsettled resonator oscillator, brace summer can be T-shaped oblique pull beam, can be the vertical pulling beam also, sees Fig. 1-4; 6) contain the cover plate silicon chip of curved cavity, it is in directly over the structure silicon chip; 7) be positioned at the patterned solder layer of one deck of cover plate silicon chip back side.
The body resonistor that the present invention proposes is bonded together by three layers of silicon substrate, structure silicon chip and cover plate silicon chips and forms, the back side of the front of silicon substrate and structure silicon chip, the back side of the front of structure silicon chip and cover plate silicon chip sticks together by bonding respectively.The structure silicon chip is between silicon substrate and cover plate silicon chip, and silicon substrate front cavity and cover plate silicon chip back side cavity form a vacuum chamber, and the resonator oscillator is arranged in this vacuum chamber.The cover plate silicon chip back side has for the curved cavity that forms vacuum chamber and applies the binder groove, and cavity is in directly over the resonator, and the binder groove is distributed in one week of the outside of cover plate silicon chip cavity.
In addition, in order to strengthen the intensity that drives signal and detection signal, improve resonator behavior, also two square plate resonance oscillators that are operated in identical mode can be of coupled connections by a beam, its structural representation and fundamental diagram are seen Fig. 1-5.
(1) produces cavity by anisotropic wet corrosion or the dry etch process of oxidation, photoetching and silicon at silicon substrate, then by oxidation technology, at silicon substrate growth layer of silicon dioxide layer;
(2) by bonding technology, the silicon substrate that step (1) is obtained and structure wafer bonding are together;
(3) utilize reduction process, step (2) is obtained the reduced thickness of the structure silicon chip on the bonding silicon chip to the required thickness of resonator structure;
The backside deposition metal level of the silicon substrate that (4) obtains in step (3);
(5) at the front depositing metal layers of the structure silicon chip of step (4), and by the metallic layer graphic of the techniques such as photoetching, corrosion with the structure front side of silicon wafer, form with the cover plate silicon chip on the contacted metal pad of soldered ball;
(6) by photoetching and deep reaction ion etching technique, the structure front side of silicon wafer that step (5) is made processes needed resonator structure;
(7) produce curved cavity by methods such as oxidation, gluing photoetching, silica erosion, silicon corrosion at the cover plate silicon chip, after its thermal oxidation, deposition is used for pad, wire, the soldered ball that electrically contacts and the binder that is used for Vacuum Package thereon;
(8) the cover plate silicon chip is closed by vacuum disk alignment keys be fixed on the structure silicon chip that step (6) obtains, resonator is carried out wafer-level vacuum package;
(9) adopt scribing machine that the described bonding disk of step (8) is carried out a scribing on the direction, by the method for scribing the scribe line on the body resonistor chip cover plate pad is scratched;
(10) adopt scribing machine that bonding disk described in the step (9) is carried out scribing on transverse axis and the y direction, the body resonistor unit on the disk is separated;
(11) the single body resonistor chip that obtains after the scribing is fixed on the substrate, and is electrically connected with substrate by the method for routing.
Bulk silicon micro mechanic resonator provided by the present invention comprises silicon substrate, the structure silicon chip, and the cover plate silicon chip, the electric insulation layer between silicon substrate and the structure silicon chip, the resonance oscillator, pad, seven part-structures such as binder is characterized in that:
1) resonator is bonded together by three layers of silicon substrate, structure silicon chip and cover plate silicon chips and forms, the back side of the front of silicon substrate and structure silicon chip, and the back side of the front of structure silicon chip and cover plate silicon chip sticks together by bonding respectively;
2) silicon substrate has the curved cavity from front etch;
3) resonator oscillator, drive electrode and detector electrode structure are positioned on the structure silicon chip;
4) silicon substrate front cavity and cover plate silicon chip back side cavity form a vacuum chamber, and the resonator oscillator is arranged in this vacuum chamber;
5) the structure silicon chip is positioned at the top of silicon substrate, and the resonance oscillator is unsettled directly over the substrate cavity;
Described resonator cover plate comprises:
1) the cover plate silicon chip back side has for the curved cavity that forms vacuum chamber and applies the binder groove, and cavity is in directly over the resonator, applies one week of the outside that the binder groove is distributed in cover plate silicon chip cavity;
2) two sides of cover plate silicon chip all has the electric insulating medium layer;
3) back side of cover plate has the patterned metal level that one deck is realized and the external world is electrically connected, and metal level is deposited on the electric insulation layer;
4) on the metal level of cover plate silicon chip the metal soldered ball is arranged, soldered ball be positioned at structure silicon chip pad directly over the position, when cover plate silicon chip and structure wafer bonding, the pad close contact on the soldered ball on the cover plate and the structure silicon chip, thereby realize electrically contacting;
5) back side of cover plate has the patterned binder of a circle, and binder is in the cover plate silicon chip binder groove, and it is positioned on the metal level, and width is less than recess width;
Described resonator oscillator structure is square plate, circular slab, Circular Plate, can be cantilever beam structure also, and be not limited to this;
The beam of described resonator oscillator structure is T-shaped oblique pull beam, can be the vertical pulling beam also, and be not limited to this; Two and two above resonator oscillators are coupled together by beam, and these two or more resonator oscillators and beam integral body are as a resonator oscillator;
Body resonistor manufacture method of the present invention is characterised in that:
1. the cavity on the silicon substrate just completed before the resonator structure layer completes;
2. the release of the making resonator device architecture of resonator structure is finished simultaneously;
3. can adopt the method for wet etching or dry etching to make substrate cavity and cover plate curved cavity, and be not limited to this;
4. with the structure wafer thinning to the required thickness of resonator structure, can adopt the method for chemical machinery, perhaps use wet etching to carry out attenuate, and be not limited to this;
5. at structure front side of silicon wafer depositing metal layers, by the contacted metal pad of soldered ball on the making of the techniques such as photoetching, corrosion and the cover plate silicon chip;
6. at silicon substrate backside deposition metal level, realize that the electricity of device substrate ground connection connects;
7. the cover plate silicon chip can utilize plain conductor implementation structure silicon chip and extraneous being electrically connected, and also can utilize the low-resistance on state characteristic implementation structure silicon chip of heavily doped region and extraneous being electrically connected, and be not limited to this;
8. comprise the disk of resonator structure and the cover plate disk carries out wafer level by binder enclosed package, the binder of aiming at bonding for the structure disk with cover plate disk cryogenic vacuum can be glass paste, can be polymer or metal also, and be not limited to this;
9. after by the method for scribing the scribe line on the cover plate pad being scratched, by the method for scribing the resonator element on the disk is separated, scribing this moment should be carried out in X direction and y direction respectively again, and scribing thickness is the thickness of bonding pad;
10. the single resonator chip that obtains after the scribing directly is fixed on the substrate, and the method by routing is electrically connected with substrate, and wherein this substrate can be printed circuit board (PCB), ceramic substrate or encapsulating package.
This shows, compare with the structure of general bulk silicon micro mechanic resonator:
The bulk silicon micro mechanic resonator structure that the present invention proposes can the control structure silicon chip and silicon substrate between the thickness of oxide layer; The bulk silicon micro mechanic resonator structure that the present invention proposes can be controlled the degree of depth of the cavity on the silicon substrate; Electric insulation layer is between silicon substrate and the structure silicon chip.
Compare with general bulk silicon micro mechanic resonator manufacture method:
The present invention at first makes the curved cavity that discharges for structure at silicon substrate, just device architecture has been discharged when device architecture completes, need not follow-up release process, has reduced process complexity;
The present invention has adopted the techniques such as anisotropic wet corrosion of the common silicon chip of low-resistance and Si-Si direct bonding, silicon, reduces the cost of manufacture of device;
The present invention is bonded in structure sheaf on the silicon substrate that erodes away in advance cavity, then utilizes the dry etching releasing structure, does not use PI to do protective layer, has therefore reduced the complexity of technique;
The present invention uses the curved cavity on the wet etching making silicon substrate, can control the cavity degree of depth, and cost is low;
The present invention is unsettled on the cavity of silicon substrate with structure sheaf, utilizes the dry etching releasing structure, does not have the glutinous problem that connects between structure sheaf and the substrate;
The present invention closes cover plate and is fixed on structure silicon chip chip top by vacuum disk alignment keys, the cavity of silicon substrate and the cavity on the cover plate form a vacuum chamber, the resonance oscillator then just in time is positioned among this vacuum chamber, thereby realize the wafer-level vacuum package of bulk silicon micro mechanic resonator, so not only improve device performance, and be applicable to batch production.
Because the processing method that the present invention proposes has just discharged device architecture when the resonator structure fabrication is finished, need not follow-up release process, has reduced process complexity; Bonding by common silicon chip is made device, has reduced cost; Use the curved cavity on the wet etching making silicon substrate, reduced cost, and by controlling the degree of depth of cavity, can improve performance of devices; Do not use PI to do protective layer, reduced the complexity of processing; Adopt the dry etching releasing structure, do not have the glutinous problem that connects of structure sheaf and substrate; Easily carry out wafer-level vacuum package, improved device performance, be applicable to become to produce in batches.
In sum, the present invention relates to a kind of bulk silicon micro mechanic resonator and manufacture method, it is characterized in that first with suspension structure--the cavity under the resonator oscillator is made, method by bonding is produced on the cavity top with the device architecture layer again, then by being dry-etched in when making the resonator structure, the resonator structure is discharged, and the method for utilizing at last vacuum disk alignment keys to close is fixed on structure silicon chip top with the cover plate silicon chip.Because the cavity of resonator below was made with wet etching before device architecture is made, and adopted wafer level packaging that device is carried out vacuum seal, thereby the cost of the resonator of making can be reduced greatly.Specifically, the making of bulk silicon micro mechanic resonator provided by the invention may further comprise the steps: 1) adopt silicon anisotropic etching to go out curved cavity at heavily doped silicon substrate front etch; 2) utilize Si-Si direct bonding technique that silicon substrate and heavily doped structure wafer bonding are in the same place.3) method by attenuate, with the reduced thickness of structure silicon chip to the required thickness of resonator structure; 4) on structure front side of silicon wafer and the silicon substrate back side, produce metal pad by the method for metal coating; 5) utilize deep etching technology, from front etching structure layer, discharge resonator structure; 6) close structure sheaf vacuum seal with resonator among cover plate silicon chip and silicon substrate by vacuum disk alignment keys, realize the Vacuum Package of the wafer level of resonator.7) the single body resonistor chip that obtains after the scribing is fixed on the substrate, and is electrically connected with substrate by routing method.The present invention, not only can reduce production costs owing to having simplified processing technology and having adopted wafer-grade vacuum encapsulation process applicable to batch production, can also improve rate of finished products, can realize the making of a kind of low cost, high performance body resonistor
Description of drawings
Fig. 1-1 (a) is the basic mode schematic diagrames of three kinds of resonator works: i) mode of flexural vibration, ii) distortion mode and iii) the phantom attitude; Fig. 1-1 (b) is phantom attitude resonator resonance oscillator branch different mode of resonance deformation schematic diagrames when being square plate, Circular Plate and circular slab: A) original structure figure, B) Wine-Glass mode, C) Extensional mode and D) Lame mode.
Fig. 1-2 is that the basic principle figure of bulk silicon micro mechanic resonator work: Fig. 1-2 (a) is the resonator basic functional principle schematic diagram of Wine-Glass mode; Fig. 1-2 (b) is the resonator basic functional principle schematic diagram of Extensional mode.
Fig. 1-3 (a) is the cross-sectional view of bulk silicon micro mechanic resonator; Fig. 1-3 (b) is the plan structure figure by A-B cross section, Fig. 1-3 (a) middle section.
It is T-shaped beam (T-shape anchor) structure that Fig. 1-the 4th, oblique pull beam are respectively the basic structure schematic diagram (vertical view) of the bulk silicon micro mechanic resonator of T-shaped beam and vertical pulling beam: Fig. 1-4 (a); Fig. 1-4 (b) is vertical pulling beam (Direct anchor) structure.
Fig. 1-the 5th, with the resonance oscillator of two bulk silicon micro mechanic resonators by be of coupled connections together basic structure schematic diagram of beam.The structural representation that two resonance oscillators of Fig. 1-5 (a) link together; Fig. 1-5 (b) is the basic functional principle schematic diagram of the device of this kind structure.
Fig. 2 is the concrete technology flow process of embodiment 1.
Fig. 2-1: the silicon substrate with curved cavity.
Fig. 2-2: oxidation back substrate silicon chip and structure silicon chip are carried out bonding, and attenuate structure silicon chip.
Fig. 2-3: behind the plated metal, make metal pad.
Fig. 2-4: discharge resonator structure.
Fig. 2-5: have the cavity that forms vacuum chamber and the cover plate silicon chip that applies the groove structure of binder.
Fig. 2-6: depositing metal layers on the cover plate silicon chip after the oxidation, and make metal pad and soldered ball.
Fig. 2-7: apply binder at the cover plate silicon chip.
Fig. 2-8: bonding disk and cover plate silicon chip are aimed at bonding.
Fig. 2-9: the resulting devices structure that specific embodiment 1 obtains.
Fig. 2-10: routing, be fixed on the resonator chip on the substrate.
Fig. 3 is the part technological process of the step 8-14 of embodiment 2.
Fig. 3-1: the cover plate silicon chip with cavity and groove structure is carried out Implantation.
Fig. 3-2: behind depositing metal layers on the cover plate silicon chip, make metal pad and soldered ball.
Fig. 3-3: apply binder at the cover plate silicon chip.
Fig. 3-4: bonding disk and cover plate silicon chip are aimed at bonding.
Fig. 3-5: the resulting devices structure that specific embodiment 2 obtains.
Fig. 3-6: routing, be fixed on the resonator chip on the substrate.
The implication of each digitized representation is among the figure:
1 heavily doped silicon substrate; Cavity on 2 silicon substrates; Electricity isolated layer on 3 silicon substrates; 4 heavily doped structure silicon chips; 5 resonator oscillators; 6 with the cover plate silicon chip on the contacted metal pad of soldered ball; 7 cover plate silicon chips; Cavity on the 8 cover plate silicon chips; Electricity isolated layer on the 9 cover plate silicon chips; Pad on the 10 cover plate silicon chips; 11 binders; 12 soldered balls; 14 apply the binder groove; 15P type heavily doped region; Metal level on 16 silicon substrates; 17 electrodes; 21 pedestals or shell; 22 metal lead wires; Pin on 23 pedestals or the shell
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail.
On resonator structure disk and cover plate disk, all deposited one deck TiW/Au metal level, by the method for photoetching and corrosion the metal level on structure disk and the cover plate disk has been carried out graphically.Method at the back side of cover plate silicon chip by silk screen printing applies last layer binder (binder can be glass paste, polymer or metal), and binder is graphical, and binder is as solder layer.Resonator is realized being electrically connected by metal level and external circuitry.The electrical resistivity range of silicon substrate and structure silicon chip is 0.01-0.3 Ω cm, and the resistivity of cover plate silicon chip does not require, and is common silicon chip.Main technological steps comprises:
(1) on the heavily doped monocrystalline silicon piece of polishing, make the bottom cavity that discharges in order to resonator structure by the anisotropic wet etching process of oxidation, photoetching, silicon, this moment, silicon substrate was not worn (Fig. 2-1) by corruption;
(2) make electricity isolated layer by the silicon chip growth layer of silicon dioxide of thermal oxidation in step (1);
(3) use bonding technology, with the silicon chip of step (2) and other a slice heavy doping monocrystalline silicon piece Direct Bonding together, and by reduction process with the wafer thinning of cavity top to the required thickness of resonator structure (Fig. 2-2);
(4) at the backside deposition metal level of the bonding disk of step (3);
(5) at the front depositing metal layers of the bonding disk of step (4), and by techniques such as photoetching, corrosion of metals that it is graphical, the structure front side of silicon wafer make with the cover plate silicon chip on the contacted metal pad of soldered ball (Fig. 2-3);
(6) by the techniques such as photoetching, DRIE with step (5) system to the upper strata silicon chip of bonding disk carry out structure and discharge, form the structure (Fig. 2-4) of resonator;
(7) produce the curved cavity that forms vacuum chamber and the groove structure (Fig. 2-5) that applies binder by methods such as oxidation, gluing photoetching, silica erosion, silicon corrosion at the 3rd low-doped cover plate silicon chip;
(8) silicon chip in the step (7) is carried out thermal oxidation after, as the metal level on the cover plate silicon chip disk, and by the method for gluing photoetching and chemical corrosion the TiW/Au metal level is carried out graphical treatment at its backside deposition one deck TiW/Au.Metal level after graphical the getting well is as the wire that is electrically connected with the external world on the cover plate disk and pad.Then by the methods such as gluing photoetching, the plating soldered ball (Fig. 2-6) that the pad realization electrically contacts on metal level making and structure silicon chip;
(9) back side of the silicon chip in step (8) applies the patterned binder of last layer by the method for silk screen printing, as the solder layer on the cover plate, then binder is carried out sintering processes (Fig. 2-7);
(10) the bonding disk that comprises the resonator structure unit in the step (6) and cover plate silicon chip in the step (8) are carried out low-temperature round slice under vacuum and aim at bonding, the bonding temperature scope is 300～500 ℃ (Fig. 2-8);
(11) the bonding disk in the step (10) is carried out scribing by scribing machine at resonator chip cover plate scribe line place, the cover plate scribe line is scratched, the scribing THICKNESS CONTROL is the thickness of cover plate silicon chip;
(12) the bonding disk in the step (11) is carried out scribing by scribing machine at transverse axis and y direction, the scribing THICKNESS CONTROL is the thickness of bonding disk.Method by scribing is separated the resonator element on the disk, obtains bulk silicon micro mechanic resonator chip (Fig. 2-9);
(13) resonator chip is fixed on a substrate or the base, and by the method for routing detector is electrically connected (Fig. 2-10) with substrate or base
Embodiment 2
The cover plate silicon chip adopts lightly doped N-type silicon chip, by methods such as oxidation, gluing photoetching, silica erosion, Implantations, forms the P+ district at the cover plate silicon chip.On resonator structure disk and cover plate disk, all deposited one deck TiW/Au metal level, by the method for photoetching and corrosion the metal level on structure disk and the cover plate disk has been carried out graphically.Method at the back side of cover plate silicon chip by silk screen printing applies last layer binder (binder can be glass paste, polymer or metal), and binder is graphical, and binder is as solder layer.Resonator is realized being electrically connected with external circuitry by the P+ district.The electrical resistivity range of silicon substrate and structure silicon chip is 0.01-0.3 Ω cm, and the electrical resistivity range of cover plate silicon chip is 0.01-1 Ω cm.Main technological steps comprises:
(1) on the monocrystalline silicon piece of polishing, make the bottom cavity that discharges in order to resonator structure by the anisotropic wet etching process of oxidation, photoetching, silicon, this moment, silicon substrate was not worn by corruption.
(2) grow layer of silicon dioxide as electric insulation layer by the silicon chip of thermal oxidation in step (1).
(3) use bonding technology, with the silicon chip of step (2) and other a slice monocrystalline silicon piece Direct Bonding together, and by reduction process with the wafer thinning of cavity top to the required thickness of resonator structure.
(4) at the backside deposition metal level of the bonding disk of step (3);
(5) at the front depositing metal layers of the bonding disk of step (4), and by techniques such as photoetching, corrosion of metals that it is graphical, the structure front side of silicon wafer make with the cover plate silicon chip on the contacted metal pad of soldered ball.See Fig. 2-3.
(6) by techniques such as photoetching, DRIE the upper strata silicon chip of step (5) is carried out structure and discharge, form the structure of resonator.
(7) produce the curved cavity that forms vacuum chamber and the groove structure that applies binder by methods such as oxidation, gluing photoetching, silica erosion, silicon corrosion at the 3rd low-doped silicon chip.
(8) silica on the silicon chip that obtains of graphical step (7), and it is carried out Implantation, form the P+ district at injection zone.See Fig. 3-1.
(9) silicon chip in the step (8) is carried out thermal oxidation after, as the metal level on the cover plate silicon chip disk, and by the method for gluing photoetching and chemical corrosion the TiW/Au metal level is carried out graphical treatment at its backside deposition one deck TiW/Au.Metal level after graphical the getting well is as the wire that is electrically connected with the external world on the cover plate disk and pad.Then by the methods such as photoetching, plating metal level make to be used for the structure silicon chip on pad realize the soldered ball that electrically contacts.See Fig. 3-2.
(10) back side of the silicon chip in step (9) applies the patterned binder of last layer by the method for silk screen printing, as the solder layer on the cover plate, then binder is carried out sintering processes.See Fig. 3-3.
(11) the bonding disk that comprises the resonator structure unit in the step (6) and cover plate silicon chip in the step (10) are carried out low-temperature round slice under vacuum and aim at bonding, the bonding temperature scope is 300～500 ℃.See Fig. 3-4.
(12) the bonding disk in the step (11) is carried out scribing by scribing machine at resonator chip cover plate scribe line place, the cover plate scribe line is scratched, the scribing THICKNESS CONTROL is the thickness of cover plate silicon chip.
(13) the bonding disk in the step (12) is carried out scribing by scribing machine at transverse axis and y direction, the scribing THICKNESS CONTROL is the thickness of bonding disk.Method by scribing is separated the resonator element on the disk, obtains the bulk silicon micro mechanic resonator chip, and the structure that obtains is seen Fig. 3-5.
(14) resonator chip is fixed on a substrate or the base, and by the method for routing detector is electrically connected with substrate or base.See Fig. 3-6.
The silicon substrate of body resonistor and structure silicon chip adopt low resistance silicon chip, and the electrical resistivity range of silicon substrate and structure silicon chip is 0.01-0.3 Ω cm, and the cover plate silicon chip is common silicon chip.In order to strengthen the intensity that drives signal and detection signal, further improve the performance of resonator, the resonance oscillator of two bulk silicon micro mechanic resonators can be of coupled connections together by a beam.Its specific embodiments is identical with embodiment 1.The main distinction is: (1) resonance oscillator is different: the oscillator of the resonator of embodiment 1 is a square plate, the oscillator of the resonator of the present embodiment be two square plates by the figure that a beam is connected, see Fig. 1-5 (a); (2) drive electrode is different: the resonator of embodiment 1 has four electrodes that are symmetrically distributed in around the resonator oscillator square plate, and the electrode of the present embodiment has six, sees Fig. 1-5 (b).Other processing step is identical with embodiment 1 corresponding steps.
Claims (10)
1. bulk silicon micro mechanic resonator is characterized in that comprising silicon substrate, structure silicon chip, cover plate silicon chip, electric insulation layer, resonator oscillator, pad and binder:
Wherein, 1) described resonator is bonded together by three layers of silicon substrate, structure silicon chip and cover plate silicon chips and forms, the back side of the front of silicon substrate and structure silicon chip, and the back side of the front of structure silicon chip and cover plate silicon chip sticks together by bonding respectively;
2) silicon substrate has the curved cavity from front etch;
3) resonator oscillator, drive electrode and detector electrode structure are positioned on the structure silicon chip;
4) silicon substrate front cavity and cover plate silicon chip back side cavity form a vacuum chamber, and the resonator oscillator is arranged in this vacuum chamber;
5) the structure silicon chip is positioned at the top of silicon substrate, and the resonance oscillator is unsettled directly over the substrate cavity;
6) electric insulation layer is between silicon substrate and the structure silicon chip.
2. bulk silicon micro mechanic resonator according to claim 1 is characterized in that:
1) the cover plate silicon chip back side has for the curved cavity that forms vacuum chamber and applies the binder groove, and cavity is in directly over the resonator, applies one week of the outside that the binder groove is distributed in cover plate silicon chip cavity;
2) two sides of cover plate silicon chip all has the electric insulating medium layer;
3) back side of cover plate silicon chip has the patterned metal level that one deck is realized and the external world is electrically connected, and metal level is deposited on the electric insulation layer;
4) on the metal level of cover plate silicon chip the metal soldered ball is arranged, soldered ball be positioned at structure silicon chip pad directly over the position, when cover plate silicon chip and structure wafer bonding, the pad close contact on the soldered ball on the cover plate and the structure silicon chip, thereby realize electrically contacting;
5) back side of cover plate has the patterned binder of a circle, and binder is in the cover plate silicon chip binder groove, and it is positioned on the metal level, and width is less than recess width.
3. bulk silicon micro mechanic resonator according to claim 1 is characterized in that described resonator oscillator structure is square plate, circular slab, Circular Plate or cantilever beam structure.
4. bulk silicon micro mechanic resonator according to claim 1 is characterized in that:
1) beam of support resonator oscillator structure is T-shaped oblique pull beam or vertical pulling beam;
2) two and two above resonator oscillators are coupled together by beam, these two or more resonator oscillators and beam integral body are as a resonance oscillator.
5. bulk silicon micro mechanic resonator according to claim 1 is characterized in that described body resonistor is connected with external circuitry by metal level or is connected with external circuitry by the P+ district.
6. such as the manufacture method of each described bulk silicon micro mechanic resonator among the claim 1-5, it is characterized in that first with suspension structure---the cavity under the resonance oscillator is made, again the method for device architecture layer by bonding is produced on the cavity top, then by being dry-etched in when making the resonator structure, also the resonator structure is discharged, utilize at last vacuum disk alignment keys to close a cover plate silicon chip and be fixed on structure silicon chip top, concrete making step is:
(1) produces cavity by anisotropic wet corrosion or the dry etch process of oxidation, photoetching and silicon at silicon substrate, then by oxidation technology, at silicon substrate growth layer of silicon dioxide layer;
(2) by bonding technology, the silicon substrate that step (1) is obtained and structure wafer bonding are together;
(3) utilize reduction process, step (2) is obtained the reduced thickness of the structure silicon chip on the bonding silicon chip to the required thickness of resonator structure;
The backside deposition metal level of the silicon substrate that (4) obtains in step (3);
(5) at the front depositing metal layers of the structure silicon chip of step (4), and by photoetching, the etching process metallic layer graphic with the structure front side of silicon wafer, form with the cover plate silicon chip on the contacted metal pad of soldered ball;
(6) by photoetching and deep reaction ion etching technique, the structure front side of silicon wafer that step (5) is made processes needed resonator structure;
(7) produce curved cavity by oxidation, gluing photoetching, silica erosion, silicon caustic solution at the cover plate silicon chip, after its thermal oxidation, deposition is used for pad, wire, the soldered ball that electrically contacts and the binder that is used for Vacuum Package thereon;
(8) the cover plate silicon chip is closed by vacuum disk alignment keys be fixed on the structure silicon chip that step (6) obtains, resonator is carried out wafer-level vacuum package;
(9) adopt scribing machine that the described bonding disk of step (8) is carried out a scribing on the direction, by the method for scribing the scribe line on the body resonistor chip cover plate pad is scratched;
(10) adopt scribing machine that bonding disk described in the step (9) is carried out scribing on transverse axis and the y direction, the body resonistor unit on the disk is separated;
(11) the single body resonistor chip that obtains after the scribing is fixed on the substrate, and is electrically connected with substrate by the method for routing.
7. manufacture method as claimed in claim 6 is characterized in that the structure silicon chip is to use chemical mechanical method or wet etching method attenuate in the step 3.
8. manufacture method as claimed in claim 6 is characterized in that the release of the making resonator device architecture of resonator structure is finished simultaneously.
9. manufacture method as claimed in claim 6, the resistivity that it is characterized in that described structure silicon chip or silicon substrate is 0.01-0.3 Ω cm, the no requirement (NR) of cover plate silicon chip resistivity.
10. manufacture method as claimed in claim 6, it is characterized in that the cover plate silicon chip adopts lightly doped N-type silicon chip, behind oxidation, gluing photoetching, silica erosion and Implantation, form the P+ district at the cover plate silicon chip, the resistivity of the cover plate silicon chip that uses is 0.01-1 Ω cm.
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Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN102200667B (en) * | 2011-05-06 | 2013-08-21 | 中国科学院上海微系统与信息技术研究所 | Silicone tunable optical filter and making method thereof |
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| CN110289823B (en) * | 2019-05-31 | 2021-11-02 | 武汉大学 | Micromechanical resonator |
| CN110697648B (en) * | 2019-10-16 | 2022-03-04 | 中电国基南方集团有限公司 | Technological method for realizing microwave port of MEMS (micro-electromechanical system) laminated device |
| CN111654262B (en) * | 2020-06-19 | 2023-09-08 | 北京航天微电科技有限公司 | Wafer level packaging method and wafer level packaging structure of SAW filter chip |
| CN111551161A (en) * | 2020-06-28 | 2020-08-18 | 江苏睦荷科技有限公司 | MEMS vibrating gyroscope structure and manufacturing method thereof |
| CN113472308B (en) * | 2021-04-29 | 2022-11-22 | 广州乐仪投资有限公司 | Resonator, forming method thereof and electronic equipment |
| CN116632507B (en) * | 2023-07-21 | 2023-10-10 | 西北工业大学 | MEMS magneto-electric coupling antenna and low-temperature packaging method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004038848A2 (en) * | 2002-10-21 | 2004-05-06 | Hrl Laboratories, Llc | Mems capacitor for tuning of microstrip filters |
| WO2004045018A1 (en) * | 2002-11-07 | 2004-05-27 | Sophia Wireless, Inc. | Coupled resonator filters formed by micromachining |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070170528A1 (en) * | 2006-01-20 | 2007-07-26 | Aaron Partridge | Wafer encapsulated microelectromechanical structure and method of manufacturing same |
-
2010
- 2010-05-21 CN CN 201010181105 patent/CN101867080B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004038848A2 (en) * | 2002-10-21 | 2004-05-06 | Hrl Laboratories, Llc | Mems capacitor for tuning of microstrip filters |
| WO2004045018A1 (en) * | 2002-11-07 | 2004-05-27 | Sophia Wireless, Inc. | Coupled resonator filters formed by micromachining |
Non-Patent Citations (2)
| Title |
|---|
| Masayoshi Esashi et.al..Vacuum-Sealed Silicon Micromachined Pressure Sensors.《Proceedings of the IEEE》.1998,第86卷(第8期), |
| Vacuum-Sealed Silicon Micromachined Pressure Sensors;Masayoshi Esashi et.al.;《Proceedings of the IEEE》;19980831;第86卷(第8期);第1627-1639页 * |
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