CN103359680B - The ultra-thin MEMS chip of a kind of Vacuum Package and working method thereof - Google Patents
The ultra-thin MEMS chip of a kind of Vacuum Package and working method thereof Download PDFInfo
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- CN103359680B CN103359680B CN201310285649.8A CN201310285649A CN103359680B CN 103359680 B CN103359680 B CN 103359680B CN 201310285649 A CN201310285649 A CN 201310285649A CN 103359680 B CN103359680 B CN 103359680B
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Abstract
The present invention discloses ultra-thin MEMS chip and the working method thereof of a kind of Vacuum Package, comprises the steps: that (1) selection standard wafer material is as substrate layer; (2) on substrate layer, individual layer is made or multilayer walks line; (3) on structural sheet, depositing metal layers is also graphical, then etches the groove of certain depth; (4) Jin-Jin eutectic bonding method is utilized substrate layer and structural sheet to be bonded; (5) structural sheet is thinned to required thickness; (6) structure of sensor is etched; (7) utilize wet etching to prepare the groove of capping layer, glass paste is graphically arrived capping layer; (8) stable glass paste vacuum encapsulation process is utilized to complete chip size package. Present invention reduces the stress produced when high vacuum encapsulates to be affected by device performance. Make electrical connection and sensor construction by doing two-sided processing at structural sheet, owing to being all do Physical Processing at one layer of silicon materials, too much stress influence can not be produced.
Description
Technical field
The present invention relates to a kind of chip processing method, particularly relate to ultra-thin MEMS chip and the working method thereof of a kind of Vacuum Package.
Background technology
Along with the function of the intelligent network terminal such as smart mobile phone, panel computer is more and more abundanter, the quantity of its integrated sensor kind also gets more and more, thus, the dimensional requirement of various sensor is also more and more stricter. In addition, for minisize gyroscopes, stable high vacuum encapsulation is also one of the problem that must conscientiously consider in R&D process.
Usually, MEMS gyroscope forms primarily of three part-structures, i.e. substrate layer, sensor construction layer and capping layer, and the thickness after the direct superposition of three-decker is generally at about 800um, based on the thickness after this encapsulation for the above-mentioned portable product mentioned, it is very difficult to meet requirement easily. Meanwhile, due to the limitation of some flow process in some maturation process, one is, owing to the space between substrate and the moving parts of sensor layer is too narrow and small and is difficult to accurate control, causes the three-dimensional motion insufficient space of the moving parts of sensor layer; Another is, the electromechanical structure design of sensor is caused to be subject to severe constraints, the electric connection structure making some important can only be arranged in the periphery of sensor construction, so just can not do structure arrangement flexibly according to demand, the stern challenge simplification of the reduction of device size, the lifting of performance and system design all proposed.
Summary of the invention
It is an object of the invention to solve the problems of the prior art, it is provided that the ultra-thin MEMS chip of a kind of Vacuum Package and working method thereof.
The technical scheme of the present invention is: the ultra-thin MEMS chip of a kind of Vacuum Package, comprising:
Substrate layer, is provided with away line on the surface of described substrate layer, is provided with multiple substrate anchor point, the metal frame for increasing Vacuum Package stability, the electrical connection through hole making substrate layer ground connection and external pin on the surface walking line;
Structural sheet, the surface etch at structural sheet has groove, and arranges multiple structure anchor point for being electrically connected and the support anchor point for decomposing external force, scribing alignment mark with substrate anchor point;
And capping layer, it is etched with envelope lid groove, in described envelope lid groove, grows silica material layer, the two ends of capping layer are provided with patterned glass paste;
Structural sheet is electrically connected with the substrate anchor point of substrate layer by structure anchor point, and described capping layer is by glass paste and described substrate layer Vacuum Package one.
Described walk line be that individual layer or multilayer walk line.
The groove that the surface etch of described structural sheet has 0��30um dark.
Described metal frame graphically goes out 2*10 ��m of multiple rectangular arranged2Aperture.
A ultra-thin MEMS chip working method for Vacuum Package, the method comprises the steps:
1) choosing thickness is that the standard wafer material of 170 ��m��400 ��m is as the substrate layer of MEMS chip;
2) on substrate layer, one layer of silica material layer is grown by thermal oxidation technology and graphical, depositing metal layers makes line, and deposit passivation layer protection as required, multiple substrate anchor point, the metal frame for increasing Vacuum Package stability, the electrical connection through hole making substrate layer ground connection and external pin are set on the surface walking line;
3) choosing thickness is that the standard wafer material of 170 ��m��400 ��m is as the structural sheet of MEMS chip, depositing metal layers on structural sheet is also graphical, then directly etch the dark groove of 0��30um, and multiple structure anchor point for being electrically connected with substrate anchor point is set, for decomposing the support anchor point of external force and scribing alignment mark;
4) utilize Jin-Jin eutectic bonding method above-mentioned substrate layer and structural sheet to be bonded, during bonding, the substrate anchor point on substrate layer is electrically connected with the structure anchor point on structural sheet;
5) by the another side of structural sheet by grinding and CMP(chemically machinery polished) it is thinned to required thickness;
6) utilize DRIE(deep reaction ion) etching structural sheet is etched sensor construction;
7) choosing thickness is that the standard wafer material of 170 ��m��400 ��m is as the capping layer of MEMS chip, wet method or DRIE etching is utilized to prepare capping layer 0��30 ��m of dark groove, and by sputtering or thermal oxidation technology growing silicon oxide material layer in 0��30 ��m of dark groove, the correlation technique of recycling silk screen printing, graphically arrives capping layer by glass paste;
8) stable glass paste vacuum encapsulation process is utilized to complete chip size package;
9) in reserved scribe line, scribing obtains single chip.
Described step 2) and 3) in depositing metal layers be aluminium layer or layers of copper or layer gold or germanium layer.
Described step 2) in line of walking be that individual layer or multilayer walk line.
Described metal frame graphically goes out 2*10 ��m of multiple rectangular arranged2Aperture.
The present invention has following useful effect:
1) reduce the stress produced when high vacuum encapsulates to be affected by device performance. Make electrical connection and sensor construction by doing two-sided processing at structural sheet, owing to being all do Physical Processing at one layer of silicon materials, therefore, too much stress influence can not be produced.
Walk line what substrate layer only needed a layer pattern, even if layout multilayer walks line as required, also because of without the need to etched recesses, and can avoid increasing device at the too much stress produced after several roads technique, the product rate of sensor itself can be produced positive effect.
Utilize cheap wet etching technique to make capping layer, and utilize stable glass paste vacuum encapsulation process, direct for capping layer and substrate layer are packaged together, substantially increase the success ratio of encapsulation.
2) constraint walked line and designed by micro electromechanical structure is reduced. In the present invention, the electric connection structure of structural sheet directly utilizes Jin-Jin eutectic bonding to be directly connected to position corresponding to substrate by anchor point, it is to increase the handiness of micro electromechanical structure design.
Accompanying drawing explanation
Fig. 1 is the sectional view of standard wafer material in the present invention;
Fig. 2 is the sectional view of substrate layer in the present invention;
Fig. 2 a is the vertical view of metal frame in the present invention;
Fig. 2 b is the sectional view of substrate layer in the present invention;
Fig. 3 be in the present invention substrate layer and structural sheet be bonded after sectional view;
Fig. 4 be Fig. 3 be bonded rear structural sheet subtract thin after sectional view;
Fig. 5 is that in the present invention, structural sheet etches the sectional view after sensor construction;
Fig. 6 is the structural representation of capping layer in the present invention;
Fig. 7 is the two chip sectional views after encapsulating in the present invention.
Embodiment
Technique means, technology feature, goal of the invention and technique effect in order to make the present invention realize are easy to understand, and below in conjunction with concrete diagram, set forth the present invention further.
Such as Fig. 6: the ultra-thin MEMS chip of a kind of Vacuum Package, comprising:
Substrate layer 100, individual layer it is provided with or multilayer walks line 101 on the surface of substrate layer 100, it is provided with multiple substrate anchor point 102, the metal frame for increasing Vacuum Package stability, the electrical connection through hole making substrate layer 100 ground connection and external pin 104 on the surface walking line 101, described metal frame graphically goes out 2*10 ��m of multiple rectangular arranged2Aperture 103, as shown in Fig. 2,2a;
Structural sheet 200, the groove 201 that the surface etch at structural sheet 200 has 0��30um dark, and multiple structure anchor point 202 for being electrically connected with substrate anchor point 102 and the support anchor point 203 for decomposing external force, scribing alignment mark are set;
And capping layer 300, it is etched with envelope lid groove 301, in described envelope lid groove 301, grows silica material layer 302, the two ends of capping layer 300 are provided with patterned glass paste;
Structural sheet 200 is electrically connected with the substrate anchor point 102 of substrate layer 100 by structure anchor point 202, and capping layer 300 is by glass paste and substrate layer 200 Vacuum Package one.
The ultra-thin MEMS chip working method of a kind of Vacuum Package in the present invention, the method comprises the steps:
1) choose thickness be the standard wafer material of 400 ��m as the substrate layer 100 of MEMS chip, as shown in Figure 1;
2) on substrate layer 100, grow one layer of silica material layer by thermal oxidation technology and graphical, deposition of aluminum or copper or gold or germanium layer makes individual layer or multilayer walks line 101; and deposit passivation layer protection as required; the surface walking line 101 at individual layer or multilayer arranges multiple substrate anchor point 102, the metal frame for increasing Vacuum Package stability, the electrical connection through hole making substrate layer 100 ground connection and external pin 104, and described metal frame graphically goes out 2*10 ��m of multiple rectangular arranged2Aperture 103, as shown in Fig. 2,2a;
3) choosing thickness is that the standard wafer material of 400 ��m is as the structural sheet 200 of MEMS chip, deposition of aluminum or copper or gold or germanium layer on structural sheet 200 are also graphical, then the dark groove of 0��30um 201 is directly etched, and multiple structure anchor point 202 for being electrically connected with substrate anchor point 102 is set, for decomposing the support anchor point 203 of external force and scribing alignment mark, as shown in Figure 2 b;
4) utilize Jin-Jin eutectic bonding method above-mentioned substrate layer 100 and structural sheet 200 to be bonded, during bonding, the substrate anchor point 102 on substrate layer 100 is electrically connected with the structure anchor point 202 on structural sheet 200, as shown in Figure 3;
5) by structural sheet 200 by grinding and CMP(chemically machinery polished) it is thinned to required thickness, as shown in Figure 4;
6) utilize DRIE(deep reaction ion) etching structural sheet 200 is etched sensor construction 204, as shown in Figure 5;
7) choosing thickness is that the standard wafer material of 400 ��m is as the capping layer 300 of MEMS chip, wet method or DRIE etching is utilized to prepare the dark groove of capping layer 0��30um 301, and by thermal oxidation technology growing silicon oxide material layer 302 in groove 301, the correlation technique of recycling silk screen printing, glass paste is graphically arrived capping layer 300, such as Fig. 6;
8) utilize stable glass paste vacuum encapsulation process that the structure device structure 204 that capping layer 300 and step 6) are handled well is completed chip size package, such as Fig. 7;
9) in reserved scribe line 400, scribing obtains single chip.
The thickness of above selection standard wafer material is 170 ��m also can manufacture corresponding chip. In the present invention, selection standard wafer material can also be able to be different thickness for same thickness as the substrate layer of chip, structural sheet and capping layer, selects according to the needs of chip.
It is only preferred embodiment of the present invention in sum, not it is used for limiting the practical range of the present invention. Namely all equivalences done according to the content of the present patent application patent scope change and modify, and all should belong to the technology category of the present invention.
Claims (8)
1. the ultra-thin MEMS chip of a Vacuum Package, it is characterised in that, comprising:
Substrate layer, is provided with away line on the surface of described substrate layer, is provided with multiple substrate anchor point, the metal frame for increasing Vacuum Package stability, the electrical connection through hole making substrate layer ground connection and external pin on the surface walking line;
Structural sheet, the surface etch at structural sheet has groove, and arranges multiple structure anchor point for being electrically connected and the support anchor point for decomposing external force, scribing alignment mark with substrate anchor point;
And capping layer, it being etched with envelope lid groove, in described envelope lid groove, grows silica material layer, the surrounding at capping layer is provided with patterned glass paste;
Described structural sheet is electrically connected with described substrate layer by structure anchor point, and described capping layer is by glass paste and described substrate layer Vacuum Package one.
2. the ultra-thin MEMS chip of Vacuum Package according to claim 1, it is characterised in that: described in walk line be that individual layer or multilayer walk line.
3. the ultra-thin MEMS chip of Vacuum Package according to claim 1, it is characterised in that: the surface etch of described structural sheet has 0��30 ��m of dark groove.
4. the ultra-thin MEMS chip of Vacuum Package according to claim 1, it is characterised in that: described metal frame graphically goes out multiple evenly distributed 2*10 ��m2Aperture.
5. a ultra-thin MEMS chip working method for Vacuum Package, the method comprises the steps:
1) choosing thickness is that the standard wafer material of 170 ��m��400 ��m is as the substrate layer of MEMS chip;
2) on substrate layer, one layer of silica material layer is grown and graphical, depositing metal layers makes line, and deposit passivation layer protection as required, multiple substrate anchor point, the metal frame for increasing Vacuum Package stability, the electrical connection through hole making substrate layer ground connection and external pin are set on the surface walking line;
3) choosing thickness is that the standard wafer material of 170 ��m��400 ��m is as the structural sheet of MEMS chip, depositing metal layers on structural sheet is also graphical, then directly etch 0��30 ��m of dark groove, and multiple structure anchor point for being electrically connected with substrate anchor point is set, for decomposing the support anchor point of external force and scribing alignment mark;
4) utilize Jin-Jin eutectic bonding method above-mentioned substrate layer and structural sheet to be bonded, during bonding, the substrate anchor point on substrate layer is electrically connected with the structure anchor point on structural sheet;
5) another side of structural sheet is thinned to required thickness;
6) structural sheet is etched sensor construction;
7) choosing thickness is that the standard wafer material of 170 ��m��400 ��m is as the capping layer of MEMS chip, etching prepares capping layer 0��30 ��m of dark groove, and in groove growing silicon oxide material layer, recycling silk screen printing correlation technique, glass paste is graphically arrived capping layer;
8) stable glass paste vacuum encapsulation process is utilized to complete chip size package;
9) in reserved scribe line, scribing obtains single chip.
6. the ultra-thin MEMS chip working method of Vacuum Package according to claim 5, it is characterised in that: described step 2) and 3) in depositing metal layers be aluminium layer or layers of copper or layer gold or germanium layer.
7. the ultra-thin MEMS chip working method of Vacuum Package according to claim 5, it is characterised in that: described step 2) in line of walking be that individual layer or multilayer walk line.
8. the ultra-thin MEMS chip working method of Vacuum Package according to claim 5, it is characterised in that: described metal frame graphically goes out 2*10 ��m of multiple rectangular arranged2Aperture.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103910325B (en) * | 2014-02-27 | 2015-06-17 | 厦门大学 | High-reliability micro-electromechanical system (MEMS) packaging structure and method capable of achieving accurate control of bonding gap |
| CN104649220B (en) * | 2015-03-11 | 2016-04-13 | 华进半导体封装先导技术研发中心有限公司 | The ultra-thin MEMS structure of low cost and manufacture craft |
| CN107607098B (en) * | 2017-10-17 | 2020-09-22 | 西北工业大学 | Preparation method of chip-level MEMS (micro-electromechanical systems) rotation modulation gyroscope |
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