CN101844739A - Manufacturing method of subminiature MEMS gyroscope sensor - Google Patents
Manufacturing method of subminiature MEMS gyroscope sensor Download PDFInfo
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- CN101844739A CN101844739A CN200910056996A CN200910056996A CN101844739A CN 101844739 A CN101844739 A CN 101844739A CN 200910056996 A CN200910056996 A CN 200910056996A CN 200910056996 A CN200910056996 A CN 200910056996A CN 101844739 A CN101844739 A CN 101844739A
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Abstract
The invention discloses a manufacturing method of a subminiature MEMS gyroscope sensor, which comprises the following steps: providing MEMS wafer, depositing silicon dioxide through a CVD process, and then depositing silicon nitride through the CVD process; etching the patterns of silicon dioxide and silicon nitride on the front surface of the wafer, etching the wafer through using a RIE process, and forming a spring area and a metal landfill area in an MEMS structure; sputtering a metal layer on the front surface of the wafer to be as a seed layer, exposing the landfill area after photoetching, filling metal the density of which is more than that of silicon at the metal landfill area; removing photosensitive resist on the front surface of the MEMS wafer, removing the seed layer of the rest positions of the surface of the wafer; preparing sheet glass two sides of which are polished, corroding a groove on the glass by using a dry method to form a gap between a mass block and a glass cavity on the wafer; and sputtering metal on the back of the wafer, forming electrode after photoetching, and finally removing the photosensitive resist. The invention reduces the dimension of the mass block or increases the mass of the mass block.
Description
Technical field
The present invention relates to a kind of MEMS process technology of (Micro-Electro-Mechanical System is called for short MEMS), particularly relate to a kind of manufacture method of subminiature MEMS gyroscope sensor.
Background technology
MEMS (MEMS) is the technology that the micrometer/nanometer material is designed, processes, makes, measures and controls, and it can be integrated into mechanical component, optical system, driver part, electric-control system the microsystem of an integral unit.It is the manufacturing process that combines with microelectric technique and micro-processing technology, produce various excellent performances, cheap, microminiaturized sensor, actuator, driver and micro-system, wherein micro-processing technology comprises that (LIGA is German Lithographie for the little processing of silicon body, the little processing of silicon face, LIGA, three speech of Galanoformung and Abformung, the i.e. abbreviation of photoetching, electroforming and injection moulding) and technology such as wafer bonding.
The MEMS inertial sensor is to use the typical microsensor that MEMS (MEMS) technical research comes out.Growing along with the MEMS technology, the performance indications of MEMS inertial sensor (comprising accelerometer and gyroscope) are more and more higher, all bringing into play enormous function with little, the low-cost advantage of its size in each aspect of industry, medical treatment and other consumption electronic products.
Common mems accelerometer can be divided into by the difference of responsive principle: pressure resistance type, piezoelectric type, tunnel effect type, condenser type etc., the inertia device but the vibration that all is based on " brace summer-mass " principle declines.Experience the inertia force that produces owing to acceleration in the acceleration field by mass, by the whole bag of tricks inertia force is detected again.The mass of this accelerometer has significant impact to sensory characteristic, and mass is big more, and the inertia force of being experienced is big more, and the signal amplitude of checking out is also just big more.
In the MEMS gyroscope, the oscillatory type silicon micro-mechanical gyroscope is modal a kind of gyroscope, and this gyroscope utilizes the size of brother's formula effect detection angular speed.Its basic functional principle is: at first make the detection mass do line vibration or angular oscillation along driving direction, enter driving mode; When in angular speed when input, arranged along the sensitive axes direction, Ge Shili will appear detecting direction of principal axis, force detect mass along the detection side to there being displacement to produce.Input angular velocity and Ge Shili's is big or small proportional, and therefore the displacement variable that causes by inspection Ge Shili just can directly obtain the information of input angular velocity.Mass is very important parts in the MEMS gyroscope, generally all can take than large tracts of land in device architecture.
From the principle of above MEMS inertial sensor as can be seen, mass plays crucial effects in the work of device, and has taken bigger area in the overall structure of device.Therefore, in order to reduce device size as far as possible reducing cost, or can improve device performance under the mass size same case, people have carried out the trial of the whole bag of tricks, but all do not have disruptive technology.
Summary of the invention
The technical problem to be solved in the present invention is in order to overcome the defective of prior art, a kind of manufacture method of subminiature MEMS gyroscope sensor is provided, it has adopted density has been incorporated into method in the MEMS structure greater than the metal material of silicon density, under situation identical in quality, reduced the size of mass, perhaps when mass size is identical, increased the quality of inertia device mass, suitably optimized device performance.
The present invention solves above-mentioned technical problem by following technical proposals: a kind of manufacture method of subminiature MEMS gyroscope sensor is characterized in that it may further comprise the steps:
S1, provide a MEMS wafer, on the MEMS wafer, grow or deposit silica, then by CVD technology deposit silicon nitride, as the mask of silicon wet etching by thermal oxide or CVD technology;
S2, etch the figure of silica and silicon nitride in the front of MEMS wafer, with RIE or ICP technology etching MEMS wafer, or silica and silicon nitride as mask, with wet etching MEMS wafer, form metal landfill zone in the spring zone of MEMS structure and the MEMS structure;
S3, at MEMS wafer frontside splash-proofing sputtering metal layer as Seed Layer, then at the wafer frontside resist coating, expose metal landfill zone after the photoetching, go out the metal or alloy of density at metal landfill zone landfill then greater than silicon density;
The photoresist of S4, removal MEMS wafer frontside, utilize metallic pattern behind the landfill as mask again, remove the Seed Layer of all the other positions of crystal column surface, and utilize silicon nitride to do the barrier layer, remove the outer metal of wafer plane with the CMP method, make the MEMS wafer frontside smooth;
The sheet glass or the silicon chip of S5, the twin polishing of preparation a slice, on silicon chip or sheet glass, erode away groove with dry method or wet method, then the MEMS wafer frontside is turned and carry out anode linkage after silicon chip or sheet glass are aimed at, formed the mass on the MEMS wafer and the gap of glass cavity;
S6, utilize CMP technology that the thickness of MEMS wafer is reduced to 1um to 100um, at MEMS wafer rear splash-proofing sputtering metal, form electrode after the photoetching, carry out etching with ICP or RIE technology after the photoetching mass and the spring structure of MEMS device again, remove the manufacturing of finishing the MEMS gyro sensor behind the photoresist at last.
Preferably, described step S1 is a depositing step, and step S2 is for forming landfill district step, and step S3 is a landfill metal step, and step S4 is a planarization step, and step S5 is the bonding step, and step S6 is a release steps.
Preferably, the material of described MEMS wafer adopts the silicon chip that all polish on the two sides.
Preferably, described silicon nitride is as the mask material of silicon wet etching and the barrier layer of CMP technology, and silica is as the stress-buffer layer between silicon nitride and the silicon chip.
Preferably, described metal is a nickel, and copper, tungsten or gold, alloy are copper nickel tungsten, copper nickel or nickel gold.
Preferably, described landfill process comprises plating, coating or sputter.
Preferably, also comprise a step among the described step S4: remove MEMS wafer frontside and all silica and the silicon nitrides in the back side with RIE or ICP dry etch process.
Preferably, described mass is connected with on every side MEMS wafer by spring, and mass inside has the metal or alloy of density greater than silicon density.
Preferably, described subminiature MEMS gyroscope sensor is a kind of MEMS inertial sensor.
Positive progressive effect of the present invention is: the present invention reduces the area size of mass, keep the mass conservation of mass itself or bigger simultaneously, by landfill density after the grooving in the MEMS wafer greater than the metal of silicon in groove, finally form the mass of composite.It is few that the plating workmanship piece technology that the present invention introduced has an equipment investment, the advantage that cost is low.Simultaneously, the mass area size of this MEMS device is dwindled greatly, has also just saved the area of whole M EMS gyro sensor.
Description of drawings
Fig. 1 is the schematic diagram of the present invention's deposit silica and silicon nitride step on wafer.
Fig. 2 forms the schematic diagram of landfill district step for the present invention.
Fig. 3 is the schematic diagram of landfill metal step of the present invention.
Fig. 4 is the schematic diagram of planarization step of the present invention.
Fig. 5 is the schematic diagram of bonding step of the present invention.
Fig. 6 is the schematic diagram of release steps of the present invention.
Fig. 7 is a MEMS gyro sensor structural representation.
The specific embodiment
Provide preferred embodiment of the present invention below in conjunction with accompanying drawing, to describe technical scheme of the present invention in detail.
The manufacture method of the subminiature MEMS gyroscope sensor that the present invention relates to, be on silicon chip/wafer, to embed in the silicon chip by etching and the electric plating method metal that density is higher than silicon, then with silicon or glass substrate bonding, discharge movable structure according to normal silicon micro mechanical processing method at last, wherein, subminiature MEMS gyroscope sensor is a kind of MEMS inertial sensor, and its manufacture method specifically may further comprise the steps:
A1, as shown in Figure 1, depositing step before this: a MEMS wafer 1 is provided, the silicon chip two sides is all polished or directly bought the polishing both surfaces wafer, as the material of MEMS wafer 1.Grow or deposit silica 2 on MEMS wafer 1 by thermal oxide or CVD (Chemical Vapor Deposition, chemical vapor deposition) technology, then by CVD (chemical vapor deposition) technology deposit silicon nitride 3, as the mask of silicon wet etching.Wherein silicon nitride is as the mask material and CMP (the Chemical Mechanical Polishing of main silicon wet etching, chemically mechanical polishing) barrier layer of technology, the effect of silica are as the stress-buffer layer between the silicon chip of silicon nitride and wafer 1.
A2, as shown in Figure 2, form landfill district step: etch silica 2 and silicon nitride 3 figures in the front of MEMS wafer 1 (promptly), with RIE (Reaction Ion Etch, the reactive ion etching method) technology or ICP (ICP-Inductive Coupled Plasma, electricity is led the coupled plasma etching method) technology etching MEMS wafer 1 (silicon chip), or silica 2 and silicon nitride 3 as mask, use the wet etching silicon chip, metal landfill zone 5 in the spring/induction region 4 of formation MEMS structure and the MEMS structure.
A3, as shown in Figure 3, landfill metal step: at MEMS wafer 1 front splash-proofing sputtering metal layer as plating seed layer, then at wafer 1 front resist coating 6, expose the landfill zone after the photoetching, go out metal 7 or the alloy of (such as electroplating) density at metal landfill zone 4 landfills then greater than silicon density, this metal is as Ni (nickel), Cu (copper), W (tungsten) or Au (gold) etc., alloy is a copper nickel tungsten, copper nickel or nickel gold etc., wherein landfill process comprises plating, coating or sputter etc., mainly by institute's embedding material operational characteristic decision.
A4, as shown in Figure 4, planarization step: remove the photoresist 6 in MEMS wafer 1 front, utilize metallic pattern after electroplating again, remove the plating seed layer of all the other positions, wafer 1 surface as mask.Utilize silicon nitride to do the barrier layer, remove the metal that exceeds wafer plane, make the MEMS wafer frontside smooth, remove MEMS wafer frontside and all silica and the silicon nitrides in the back side with RIE or ICP dry etch process again with the CMP method.
A5, as shown in Figure 5, bonding step: sheet glass 10 or the silicon chip of preparing a slice twin polishing, on silicon chip or sheet glass, erode away groove 8 with dry method (RIE or ICP) or wet method, spring zone 9 on groove 8 and the MEMS disk behind the CMP is relative, groove 8 must have enough degree of depth with the proper motion that holds the MEMS device or the deformation of the MEMS structure when being subjected to strong external impacts, and reduction parasitic capacitance, then MEMS wafer 1 front is turned and carry out anode linkage after silicon chip or sheet glass 10 are aimed at, formed the mass on the MEMS wafer and the gap 11 of glass cavity.
A6, as shown in Figure 6, release steps: utilize CMP that the thickness of MEMS wafer 1 is decreased to the thickness that design needs, as thickness is 1um to 100um, at MEMS wafer 1 back spatter metal, form electrode 13 after the photoetching, carry out etching with ICP or RIE technology after the photoetching structures such as mass, spring 12 and induction of MEMS device again, remove the manufacturing of finishing the MEMS gyro sensor behind the photoresist at last.
Fig. 7 is a MEMS gyro sensor structural representation.As shown in Figure 7, form a mass 14 in the middle of the MEMS wafer 1, mass 14 is connected with on every side MEMS wafer 1 by spring 12, mass 14 inside have metal 7 or the alloy of density greater than silicon density, thereby reduce the area size of mass, keep the mass conservation of mass itself or bigger simultaneously.
Though more than described the specific embodiment of the present invention, it will be understood by those of skill in the art that these only illustrate, under the prerequisite that does not deviate from principle of the present invention and essence, can make numerous variations or modification to these embodiments.Therefore, protection scope of the present invention is limited by appended claims.
Claims (9)
1. the manufacture method of a subminiature MEMS gyroscope sensor is characterized in that, it may further comprise the steps:
S1, provide a MEMS wafer, on the MEMS wafer, grow or deposit silica, then by CVD technology deposit silicon nitride, as the mask of silicon wet etching by thermal oxide or CVD technology;
S2, etch the figure of silica and silicon nitride in the front of MEMS wafer, with RIE or ICP technology etching MEMS wafer, or silica and silicon nitride as mask, with wet etching MEMS wafer, form metal landfill zone in the spring zone of MEMS structure and the MEMS structure;
S3, at MEMS wafer frontside splash-proofing sputtering metal layer as Seed Layer, then at the wafer frontside resist coating, expose metal landfill zone after the photoetching, go out the metal or alloy of density at metal landfill zone landfill then greater than silicon density;
The photoresist of S4, removal MEMS wafer frontside, utilize metallic pattern behind the landfill as mask again, remove the Seed Layer of all the other positions of crystal column surface, and utilize silicon nitride to do the barrier layer, remove the outer metal of wafer plane with the CMP method, make the MEMS wafer frontside smooth;
The sheet glass or the silicon chip of S5, the twin polishing of preparation a slice, on silicon chip or sheet glass, erode away groove with dry method or wet method, then the MEMS wafer frontside is turned and carry out anode linkage after silicon chip or sheet glass are aimed at, formed the mass on the MEMS wafer and the gap of glass cavity;
S6, utilize CMP technology that the thickness of MEMS wafer is reduced to 1um to 100um, at MEMS wafer rear splash-proofing sputtering metal, form electrode after the photoetching, carry out etching with ICP or RIE technology after the photoetching mass and the spring structure of MEMS device again, remove the manufacturing of finishing the MEMS gyro sensor behind the photoresist at last.
2. the manufacture method of subminiature MEMS gyroscope sensor as claimed in claim 1, it is characterized in that, described step S1 is a depositing step, step S2 is for forming landfill district step, step S3 is a landfill metal step, step S4 is a planarization step, and step S5 is the bonding step, and step S6 is a release steps.
3. the manufacture method of subminiature MEMS gyroscope sensor as claimed in claim 1 is characterized in that, the silicon chip that the material of described MEMS wafer adopts the two sides all to polish.
4. the manufacture method of subminiature MEMS gyroscope sensor as claimed in claim 3, it is characterized in that, described silicon nitride is as the mask material of silicon wet etching and the barrier layer of CMP technology, and silica is as the stress-buffer layer between silicon nitride and the silicon chip.
5. the manufacture method of subminiature MEMS gyroscope sensor as claimed in claim 1 is characterized in that, described metal is a nickel, and copper, tungsten or gold, alloy are copper nickel tungsten, copper nickel or nickel gold.
6. the manufacture method of subminiature MEMS gyroscope sensor as claimed in claim 1 is characterized in that, described landfill process comprises plating, coating or sputter.
7. the manufacture method of subminiature MEMS gyroscope sensor as claimed in claim 1 is characterized in that, also comprises a step among the described step S4: remove MEMS wafer frontside and all silica and the silicon nitrides in the back side with RIE or ICP dry etch process.
8. the manufacture method of subminiature MEMS gyroscope sensor as claimed in claim 1 is characterized in that, described mass is connected with on every side MEMS wafer by spring, and mass inside has the metal or alloy of density greater than silicon density.
9. the manufacture method of subminiature MEMS gyroscope sensor as claimed in claim 1 is characterized in that, described subminiature MEMS gyroscope sensor is a kind of MEMS inertial sensor.
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| CN103035495A (en) * | 2012-11-28 | 2013-04-10 | 上海华力微电子有限公司 | Separation blade used for polycrystalline silicon furnace tube technology and preparation method for same |
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| CN103359680A (en) * | 2013-07-08 | 2013-10-23 | 深迪半导体(上海)有限公司 | Vacuum-packaged ultrathin MEMS chip and processing method thereof |
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| CN104291266A (en) * | 2013-07-19 | 2015-01-21 | 飞思卡尔半导体公司 | Reducing microelectromechanical systems stiction by forming silicon carbide layer |
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| CN103183306B (en) * | 2011-12-29 | 2015-10-21 | 财团法人工业技术研究院 | Micro-electromechanical device with multiple electrical channels and manufacturing method thereof |
| CN103213939B (en) * | 2012-01-19 | 2016-01-20 | 北京自动化控制设备研究所 | A kind of processing method of four mass silicon microelectromechanicgyroscope gyroscope structures |
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| CN103864006A (en) * | 2012-12-18 | 2014-06-18 | 飞思卡尔半导体公司 | Reducing MEMS stiction by introduction of a carbon barrier |
| CN103864006B (en) * | 2012-12-18 | 2017-04-12 | 飞思卡尔半导体公司 | Reducing MEMS stiction by introduction of a carbon barrier |
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| CN104291266A (en) * | 2013-07-19 | 2015-01-21 | 飞思卡尔半导体公司 | Reducing microelectromechanical systems stiction by forming silicon carbide layer |
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| CN105705950B (en) * | 2013-11-12 | 2020-02-07 | 罗伯特·博世有限公司 | Inertial sensor |
| CN105705950A (en) * | 2013-11-12 | 2016-06-22 | 罗伯特·博世有限公司 | Inertial sensor |
| CN105366627A (en) * | 2015-11-24 | 2016-03-02 | 中北大学 | Micro-electromechanical system (MEMS) device protection mechanism adapting to high overload environment |
| CN107032286A (en) * | 2016-01-29 | 2017-08-11 | 英飞凌科技股份有限公司 | Sensor device and its manufacture method |
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| CN107867670A (en) * | 2016-09-27 | 2018-04-03 | 美国亚德诺半导体公司 | Folded spring is coupled in MEMS (MEMS) device |
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| WO2018232779A1 (en) * | 2017-06-19 | 2018-12-27 | 华中科技大学 | Mems gravimeter |
| US11262474B2 (en) | 2017-06-19 | 2022-03-01 | Huazhong University Of Science And Technology | MEMS gravimeter |
| WO2019109639A1 (en) * | 2017-12-08 | 2019-06-13 | 华中科技大学 | Method for fabricating high precision mems inertial sensor using soi wafer and accelerometer |
| CN109188021A (en) * | 2018-08-30 | 2019-01-11 | 太原理工大学 | The porous spring cantilever sensitive structure of low frequency micro-acceleration sensor |
| CN110043248A (en) * | 2019-05-31 | 2019-07-23 | 西南石油大学 | A kind of measurement pipe nipple of full posture MWD inclination measurement device |
| CN111115556A (en) * | 2019-12-30 | 2020-05-08 | 青岛歌尔智能传感器有限公司 | Packaging method and packaging structure of micro-electro-mechanical system sensor |
| CN112624031A (en) * | 2020-12-18 | 2021-04-09 | 北京航天控制仪器研究所 | MEMS structure with over-etching barrier layer and preparation method thereof |
| CN113551672A (en) * | 2021-07-09 | 2021-10-26 | 赛莱克斯微系统科技（北京）有限公司 | Micro-electro-mechanical system, micro-electro-mechanical system (MEMS) inertial sensor and manufacturing method thereof |
| CN113547223A (en) * | 2021-07-21 | 2021-10-26 | 中国人民解放军国防科技大学 | Method for manufacturing planar wafer-level fused quartz MEMS gyroscope |
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Application publication date: 20100929 |