CN103213939B - A kind of processing method of four mass silicon microelectromechanicgyroscope gyroscope structures - Google Patents
A kind of processing method of four mass silicon microelectromechanicgyroscope gyroscope structures Download PDFInfo
- Publication number
- CN103213939B CN103213939B CN201210017609.0A CN201210017609A CN103213939B CN 103213939 B CN103213939 B CN 103213939B CN 201210017609 A CN201210017609 A CN 201210017609A CN 103213939 B CN103213939 B CN 103213939B
- Authority
- CN
- China
- Prior art keywords
- sealing cap
- sensitive structure
- mask
- processing
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The present invention relates to processing method, particularly there is not contour comb structure and need the processing method of silicon microelectromechanicgyroscope gyroscope structure of wafer level packaging.It comprises step one: the lower sealing cap of processing; Step 2: lower sealing cap and sensitive structure bonding, sensitive structure surface structure is processed; Lower sealing cap and sensitive structure bonding; Step 3: processing sensitive structure, the removal of sensitive structure supporting layer and insulating barrier; Silicon nitride mask is graphical; Growth silica; Sensitive structure mask pattern; Etching determines toothing; The dynamic toothing of etching; Step 4: sealing cap in processing, upper sealing cap fairlead processing; Upper sealing cap mass processing; Step 5: sensitive structure and upper sealing cap bonding; Step 6: metallization.Effect of the present invention is: be conducive to ensureing line quality, improve the verticality of side wall of comb structure; Solve the problems such as the residual stress caused by thermal coefficient of expansion difference of different materials, improve processing compatibility; Decrease manufacturing procedure, reduce process costs.
Description
Technical field
The present invention relates to a kind of four quality silicon microelectromechanicgyroscope gyroscope structure processing methods, particularly there is not contour comb structure and need the processing method of silicon microelectromechanicgyroscope gyroscope structure of wafer level packaging.
Background technology
The research of microelectromechanicgyroscope gyroscope starts from the eighties in 20th century.1985, first Drape laboratory started to develop microelectromechanicgyroscope gyroscope, and to be 4000 °/h by the drift of 1994 be better than 10 °/h to the drift of 2000 to its performance.2002, a kind of silicon micro-gyroscope for aircraft of the jet development in laboratory of the U.S., performance indications 1 °/h.At present, to the precision future development that 0.1 °/h is even higher.Owing to having, volume is little, quality is light, reliability is high, low in energy consumption, can be mass and the advantage such as measurement category is large, microthrust test is widely used in the military and civilians such as guided cartridge, grapefruit satellite and spacecraft, vehicle skidproof brake system, air-bag deployment and automatic adjustment system.
At present, MEMS many employings silicon materials, it has excellent machinery and electrical characteristic.For improving the performance indications of silicon microelectromechanicgyroscope gyro, the microelectromechanicgyroscope gyroscope structure related in this patent is four mass microelectromechanicgyroscope gyroscopes.Illustrate the architectural feature of four quality microelectromechanicgyroscope gyroscopes below.
Fig. 1 represents four quality silicon microelectromechanicgyroscope gyro 100 three-dimensional structure schematic diagrames.Microelectromechanicgyroscope gyroscope 100 in the present invention comprises sealing cap 20, sensitive structure 10 and lower sealing cap 30 3 part and forms, and in typical " sandwich " structure, upper sealing cap 20 and lower sealing cap 30 are about sensitive structure 10 symmetry.
Above-mentioned sensitive structure 10 mainly comprises the structures such as sensitive structure mass 11, brace summer 12, comb structure 13, anchor point 14, central supported point 17 and syndeton 16.The thickness of sensitive structure 10 is 60 ~ 80 μm.
Above-mentioned sensitive structure mass 11 has 4, and 4 sensitive structure masses 11 are circumferentially evenly arranged centered by central supported point 17.Sensitive structure mass 11 is curved, and radian is 60 °, and the area of each mass, thickness are all identical.Arrange between adjacent sensitive architecture quality block 11 and drive fixed wheel contiguous block 15.
Above-mentioned 4 sensitive structure masses 11 are connected with central supported point 17 respectively by 4 brace summers 12, and wherein brace summer 12 width is about 20 ~ 30 μm.
Above-mentioned comb structure 13 comprises determines tooth 13a and dynamic tooth 13b, wherein dynamic tooth 13b is positioned on sensitive structure mass 11, determining tooth 13a is positioned on driving fixed wheel contiguous block 15, dynamic tooth 13b is 3 ~ 5 μm with the width determining tooth 13a, planar dimension precision controlling is within ± 0.5 μm, verticality of side wall controls 90 ° ± 1 °, and both are interspersed, and gap is about 3 ~ 5 μm.
Above-mentioned upper sealing cap 20 has 13 fairleads 22, and wherein fairlead 22a, fairlead 22b, fairlead 22c and fairlead 22d are mainly used in applying the signal of telecommunication to upper sealing cap mass 21, bottom crown mass 31; Fairlead 22e is used for applying the signal of telecommunication to sensitive structure 10; Fairlead 22f, fairlead 22g, fairlead 22h and fairlead 22i are used for applying the signal of telecommunication to determining tooth 13a.
There is certain capacitance gap with upper sealing cap mass 21, bottom crown mass 31 in above-mentioned sensitive structure mass 11, is generally 2 ~ 3 μm.
Fig. 2 a ~ Fig. 2 b is not contour comb structure schematic diagram.Fig. 2 a is the two-dimensional section figure determining tooth 13a and dynamic tooth 13b, wherein determines to there is certain clearance G between tooth 13a and dynamic tooth 13b, is generally 2 ~ 3 μm.Determining tooth 13a is highly T, and the height of dynamic tooth is T1, and wherein the height of the top and bottom of dynamic tooth 13b is respectively Δ T2 with the difference in height of the relevant position of determining tooth.Fig. 2 b is the side schematic view determining tooth 13a and dynamic tooth 13b, can find out adjacent to determine tooth 13a and dynamic tooth 13b exists certain overlapping region 18.
Fig. 3 a ~ Fig. 3 c represents sensitive structure 10, upper sealing cap 20 and lower sealing cap 30 structural representation.Fig. 3 a represents sealing cap device layer 20a structure, have 4 masses, upper sealing cap mass 21a, upper sealing cap mass 21b, upper sealing cap mass 21c and upper sealing cap mass 21d, 4 syndetons, upper sealing cap syndeton 26a, upper sealing cap syndeton 26b, upper sealing cap syndeton 26c and upper sealing cap syndeton 26d, wherein go up sealing cap syndeton 26a, upper sealing cap syndeton 26b, upper sealing cap syndeton 26c and upper sealing cap syndeton 26d respectively with upper sealing cap mass 21a, upper sealing cap mass 21b, upper sealing cap mass 21c is connected with upper sealing cap mass 21d, and relative to upper sealing cap mass 21, upper sealing cap syndeton 26 is in being rotated counterclockwise.Fig. 3 b represents sensitive structure 10, have 4 masses, sensitive structure mass 11a, sensitive structure mass 11b, sensitive structure mass 11c and sensitive structure mass 11d, 4 syndetons, sense anatomical connectivity structure 16a, sense anatomical connectivity structure 16b, sense anatomical connectivity structure 16c and sense anatomical connectivity structure 16d, wherein feel anatomical connectivity structure 16a, sense anatomical connectivity structure 16b, sense anatomical connectivity structure 16c and sense anatomical connectivity structure 16d and sensitive structure mass 11a, sensitive structure mass 11b, sensitive structure mass 11c is not connected with sensitive structure mass 11d.Fig. 3 c represents lower sealing cap device layer 30a, have 4 masses, bottom crown mass 31a, bottom crown mass 31b, bottom crown mass 31c and bottom crown mass 31d, 4 syndetons, bottom crown syndeton 36a, bottom crown syndeton 36b, bottom crown syndeton 36c and bottom crown syndeton 36d, wherein bottom crown syndeton 36a, bottom crown syndeton 36b, bottom crown syndeton 36c and bottom crown syndeton 36d respectively with bottom crown mass 31a, bottom crown mass 31b, bottom crown mass 31c is connected with bottom crown mass 31d, and relative to bottom crown mass 31, bottom crown syndeton 36 is in turning clockwise.In wafer level packaging process, by Si direct bonding, upper sealing cap syndeton 26a, sensitive structure syndeton 16a and bottom crown syndeton 36b are bonded together, and go up sealing cap mass 21a like this and bottom crown mass 31b realizes electricity interlinkage.In like manner, upper sealing cap mass 21b, upper sealing cap mass 21c and upper sealing cap mass 21d realize electricity interlinkage with bottom crown mass 31c, bottom crown mass 31d and bottom crown mass 31a respectively.If upwards sealing cap mass 21a, upper sealing cap mass 21b, upper sealing cap mass 21c and upper sealing cap mass 21d apply "+", "-", "+", "-" signal respectively, then bottom crown mass 31a, bottom crown mass 31b, bottom crown mass 31c and bottom crown mass 31d are "-", "+", "-", "+" signal.
At present, the processes said structures such as normal employing photoetching, etching, bonding, need to ensure: in the middle of (1) sensitive structure determine tooth 13a and dynamic tooth 13b difference in height requires to control within 2 ~ 3 μm, planar dimension precision controlling is within ± 0.5 μm simultaneously, and verticality of side wall controls 90 ° ± 1 °; (2) sensitive structure 10 requires to realize low stress wafer level packaging; (3) require to metallize in fairlead 22, make the structures such as metal electrode and upper bottom crown, anchor point realize good ohmic and contact, but due to fairlead 22 degree of depth comparatively deeply, therefore difficulty is very large.
Therefore, in the present invention, the processing difficulties of four mass silicon microelectromechanicgyroscope gyroscope structures has: the processing of the not contour comb of (1) high accuracy.Normal employing individual layer mask (SiO at present
2) process program and metal (Al) and medium mask (Si
3n
4) two masking process scheme, but individual layer masking process scheme processing not contour structure time, be difficult to the thickness of the accurately each mask etching of control and easily cause larger scale error through multiple etching, and metal and medium mask bilayer mask process program processing not contour structure time, due to metal mask graphical time, need wet etching be adopted, be difficult to the dimensional accuracy and the line quality that ensure mask pattern, and then affect dimensional accuracy and the verticality of side wall of micro-structural; (2) low stress wafer level packaging.At present, silicon microelectromechanicgyroscope gyro often adopts glass (Corning7740)-silicon anode linkage mode to carry out wafer level packaging, but in bonding process, the thermal coefficient of expansion of Corning7740 is almost constant 3.3 × 10 from room temperature to when 450 DEG C
-6/ DEG C, and silicon at the thermal coefficient of expansion of this temperature range by 2.5 × 10
-6/ DEG C increase to 4 × 10
-6/ DEG C, cause glass-silicon bonded interface can there is larger residual stress like this, have a strong impact on the performance indications of microelectromechanicgyroscope gyroscope; (3) dark fairlead metallization process.In traditional handicraft, often adopt stripping (lift-off) technique to metallize to micro-structural, but due to the fairlead degree of depth in said structure darker, in even glue process, photoresist is piled up in dark fairlead, is difficult to development clean, stripping technology therefore cannot be adopted to metallize.
Summary of the invention
The object of the invention is for prior art defect, a kind of method of processing four mass microelectromechanicgyroscope gyroscopes based on SOI technology is provided.The technical scheme that the present invention takes is as follows:
A processing method for four mass silicon microelectromechanicgyroscope gyroscope structures, comprises the steps:
Step one: the lower sealing cap of processing
Step 1.2: lower sealing cap substrate processing
Photoetching process is carried out to the substrate cleaned, form mask pattern, carry out the dark silicon etching of deep reaction ion etching again, the thickness of sealing cap device layer 30a under etching depth SOI substrate, form the border structure 53 of lower sealing cap, bottom crown mass 31, bottom crown syndeton 36 and bottom crown central supported point 37, the NaOH solution of 5% is finally utilized to remove photoresist
Step 2: lower sealing cap and sensitive structure bonding
Step 2.2: sensitive structure surface structure is processed
Photoetching is carried out to cleaned sensitive structure substrate and forms mask pattern, finally carry out deep reaction ion etching, the silicon materials covered without mask are etched, form shallow slot structure 61, etching depth is tooth and the difference in height Δ T2 determining tooth, be generally 2 ~ 3 μm, and remove photoresist mask by the NaOH solution of 5%
Step 2.3: lower sealing cap and sensitive structure bonding
Sensitive structure 10 and lower sealing cap 30 are aimed at, then Si direct bonding is carried out at bonder, anneal in high-temperature annealing furnace after bonding completes, annealing temperature is 1000 DEG C, annealing time 4 hours, bond area is sensitive structure border structure 51 and lower sealing cap border structure 53, central supported point 17 and bottom crown central supported point 37, sensitive structure syndeton 16 and bottom crown syndeton 36
Step 3: processing sensitive structure
Step 3.1: the removal of sensitive structure supporting layer and insulating barrier
Sensitive structure supporting layer 10c is removed by the method for mechanical lapping or wet etching, wet etching can adopt KOH solution to corrode, KOH concentration is 40% (mass concentration), corrosion temperature is 80 DEG C, etching time about 10 hours, sensitive structure insulating barrier 10b can adopt buffered HF (HF: NH
4f=1: 5, volume ratio) carry out erosion removal, the sensitive structure supporting layer 10c of removal sensitive structure substrate and the structure of sensitive structure insulating barrier 10b are as shown in Figure 9, the KOH concentration that those skilled in the art utilizes this step to provide, corrosion temperature and etching time can complete the corrosion process of sensitive structure supporting layer 10c, the buffered HF simultaneously utilizing this step to provide can complete sensitive structure insulating barrier 10b erosion removal
Step 3.2: silicon nitride mask is graphical
First the surface deposition Si after upper step removes sensitive structure supporting layer 10c and sensitive structure insulating barrier 10b
3n
4mask, depositional mode is enhancement mode plasma PECVD, and film thickness is 400 ~ 500nm, then etches Si by photoetching and RIE
3n
4mask pattern 101,
Step 3.3: growth silica
Thermal oxidation process is adopted to prepare SiO
2mask, upper step removes Si
3n
4si sheet superficial growth SiO after mask
2, form mask pattern 102, SiO
2mask thicknesses is 400 ~ 500nm,
Step 3.4: sensitive structure mask pattern
Photoetching sensitive structure figure, then RIE etching is carried out to the silicon nitride mask 101 covered without photoresist 103 and silicon oxide masking film 102, form dynamic tooth mask pattern 104 and determine tooth mask pattern 105,
Step 3.5: etching determines toothing
Carry out deep reaction ion etching to the sensitive structure device layer 10a covered without mask, form sensitive structure syndeton 16, central supported point 17 and sensitive structure border structure 51, etching depth is the thickness of sensitive structure device layer 10a, is 60 ~ 80 μm,
Step 3.6: the dynamic toothing of etching
First photoresist is removed, then wet etching Si
3n
4mask, Si
3n
4mask corrosion liquid is the phosphoric acid (H of 80%
3pO
4), corrosion temperature is 160 DEG C ~ 180 DEG C, and etching time is 30 ~ 40min, finally to not having Si
3n
4the sensitive structure device layer 10a that mask covers carries out deep reaction ion etching, forms mass block structure 11, and etching depth is tooth and the difference in height Δ T2 determining tooth, is generally 2 ~ 3 μm,
Step 4: sealing cap in processing
Step 4.2: upper sealing cap fairlead processing
Mask is prepared in upper and lower for SOI substrate surface simultaneously, first prepares SiO
2mask, then at SiO
2mask prepares Si
3n
4mask, wherein SiO
2mask adopts thermal oxide mode to prepare, and thickness is 100nm ~ 150nm, Si
3n
4mask adopts low-pressure chemical vapor deposition (LPCVD) mode to prepare, thickness is 400 ~ 500nm, then lithography fair lead 22 figure on upper sealing cap supporting layer 20c, recycling RIE etch mask figure, next step wet etching fairlead 22, corrosive liquid is the KOH solution of 40% (mass percent), corrosion temperature is 60 DEG C, and etching time is 8 ~ 10h, and corrosion depth is supporting layer 20c thickness, mask is removed in final etching, Si
3n
4mask corrosion liquid is the phosphoric acid (H of 80% (mass percent)
3pO
4), corrosion temperature is 160 DEG C ~ 180 DEG C, and etching time is 30 ~ 40min, SiO
2mask corrosion liquid is buffered HF (HF: NH
4f=1: 5, volume ratio), corrosion temperature is 50 ~ 60 DEG C,
Step 4.3: upper sealing cap mass processing
Processing method is identical with the processing method of the lower sealing cap device layer 30a in step 1.2, forms mask pattern by photoetching, finally utilizes deep reaction ion etching to carry out dark silicon etching and forms sealing cap device layer 20a structure, and removes residue photoresist mask,
Step 5: sensitive structure and upper sealing cap bonding
Bonding process is identical with step 2.3 bonding technology, and bond area is sensitive structure border structure 51 and upper sealing cap border structure 52, central supported point 17 and top crown central supported point 27, sensitive structure syndeton 16 and upper sealing cap syndeton 26,
So far the product processed can be called microelectromechanicgyroscope gyroscope 100,
Step 6: metallization
After bonding completes, microelectromechanicgyroscope gyroscope 100 is aimed at metal shutter 50 and effectively fixes, thermal evaporation methods is adopted to be coated with metallic film 41 again in fairlead 22, metallic film 41 and upper sealing cap device layer 20a is made to form good ohmic structure, wherein the material of metallic film 41 is Al or Ti/Pt/Au, Al film thickness is 800 ~ 1000nm, the thickness of Ti/Pt/Au film is respectively 20nm/50nm/200nm, after plated film terminates, metal shutter 50 is separated with microelectromechanicgyroscope gyroscope 100, finally, lead-in wire 40 and metallic film 41 are carried out wire bonding, to realize the input and output of signal.
A kind of processing method of four mass silicon microelectromechanicgyroscope gyroscope structures as above, wherein, manufacturing process according to processing lower sealing cap, lower sealing cap and sensitive structure bonding, process sealing cap in sensitive structure, processing, sensitive structure and upper sealing cap bonding, metallized processing sequence and carry out; Or according to processing upper sealing cap, sensitive structure and upper sealing cap bonding, process sensitive structure, process sealing cap, lower sealing cap and sensitive structure bonding, metallized order down and process.
A kind of processing method of four mass silicon microelectromechanicgyroscope gyroscope structures as above, wherein, according to processing lower sealing cap, lower sealing cap and sensitive structure bonding, process sealing cap in sensitive structure, processing, sensitive structure and upper sealing cap bonding, metallized processing sequence and carry out adding man-hour, in processing, the step of sealing cap is arranged on the lower sealing cap of processing and between lower sealing cap and sensitive structure bonding, or is arranged on lower sealing cap and between sensitive structure bonding and processing sensitive structure.
A kind of processing method of four mass silicon microelectromechanicgyroscope gyroscope structures as above, wherein, when according to processing upper sealing cap, sensitive structure and upper sealing cap bonding, process sensitive structure, process that sealing cap, lower sealing cap and sensitive structure bonding, metallized order are processed down time, the step of the lower sealing cap of processing is arranged on the upper sealing cap of processing and between sensitive structure and upper sealing cap bonding, or is arranged on sensitive structure and between upper sealing cap bonding and processing sensitive structure.
A processing method for four mass silicon microelectromechanicgyroscope gyroscope structures, wherein, increases following step in step one as above
Step 1.1 cleans lower sealing cap substrate
Under processing, first clean SOI substrate before sealing cap, this substrate comprises lower sealing cap device layer 30a, lower sealing cap insulating barrier 30b and lower sealing cap supporting layer 30c, wherein descends sealing cap device layer 30a to be Si, p-type is adulterated, (111) crystal orientation, thickness is 60 ~ 80 μm, and lower sealing cap insulating barrier 30b is SiO
2, thickness is 1 ~ 2 μm, lower sealing cap supporting layer 30c, and p-type is adulterated, (111) crystal orientation, and thickness is 400 ~ 500 μm, and cleaning is as follows: the first step is at the SC-1 (NH of 70 DEG C ~ 75 DEG C
4oH: H
2o
2: H
2o=1: 1: 5, volume ratio) in cleaning 5 ~ 10min, second step is at the SC-2 (HCl: H of 70 DEG C ~ 75 DEG C
2o
2: H
2o=1: 1: 6, volume ratio) middle cleaning 5 ~ 10min, finally use deionized water rinsing,
Following step is increased in step 2:
Step 2.1: sensitive structure substrate cleans
First clean SOI substrate, the technical requirement of SOI substrate is identical with the SOI substrate of upper sealing cap, lower sealing cap, and cleaning is identical with cleaning in step 1.1,
Following step is increased in step 4:
Step 4.1: upper sealing cap substrate cleaning
First clean SOI substrate, cleaning method is identical with step 1.1 cleaning.。
Adopt technique scheme, the present invention obtains following effect:
1. the present invention is by two mask (SiO
2and Si
3n
4) technical scheme achieves the processing of not contour comb structure, adopt dry etching to carry out mask pattern simultaneously, be conducive to ensureing line quality, improve the verticality of side wall of comb structure;
2. the present invention is based on three layers of SOI substrate, and utilize Si direct bonding technology to carry out wafer level packaging to sensitive structure, efficiently solve the problems such as the residual stress caused by thermal coefficient of expansion difference of different materials on the one hand, on the other hand SiO in SOI substrate
2insulating barrier electrifiable buffer action and etch stop layer effect, improve processing compatibility;
3. the present invention adopts the directed sputtering method of shutter to carry out dark fairlead metallization, avoids the problems such as the even glue of dark fairlead in stripping technology, development and follow-up photoresist lift off, decreases manufacturing procedure, reduce process costs.
Accompanying drawing explanation
Fig. 1 is four quality silicon microelectromechanicgyroscope gyroscope structure schematic diagrames;
Fig. 2 a is not contour comb two-dimensional section schematic diagram;
Fig. 2 a is not contour comb two-dimensional side schematic diagram;
Fig. 3 a represents the schematic diagram of sensitive structure;
Fig. 3 b represents the schematic diagram of sealing cap;
Fig. 3 c represents the schematic diagram of lower sealing cap;
Fig. 4 is lower sealing cap machining sketch chart;
Fig. 5 is upper sealing cap fairlead machining sketch chart;
Fig. 6 is upper sealing cap mass machining sketch chart;
Fig. 7 is sensitive structure upper surface machining sketch chart;
Fig. 8 is sensitive structure and lower sealing cap bonding schematic diagram;
Fig. 9 is that sensitive structure supporting layer and insulating barrier remove schematic diagram;
Figure 10 is the graphical schematic diagram of silicon nitride mask;
Figure 11 is growing silicon oxide schematic diagram;
Figure 12 determines the graphical schematic diagram of tooth;
Figure 13 is that etching determines tooth schematic diagram;
Figure 14 is the dynamic tooth schematic diagram of etching;
Figure 15 is sensitive structure and upper sealing cap bonding schematic diagram;
Figure 16 is dark fairlead metallization schematic diagram.
In figure: 10. sensitive structure, 10a. sensitive structure device layer, 10b. sensitive structure insulating barrier, 10c. sensitive structure supporting layer, 11.11a.11b.11c.11d. sensitive structure mass, 12. brace summers, 13. comb structures, 13a. determines tooth, 13b. moves tooth, 14. anchor points, 15. drive fixed wheel contiguous block, 16.16a.16b.16c.16d. sensitive structure syndeton, 17. central supported points, 18. overlapping regions, sealing cap on 20., the upper sealing cap device layer of 20a., the upper sealing cap insulating barrier of 20b., the upper sealing cap supporting layer of 20c., 21.21a.21b.21c.21d. upper sealing cap mass, 22.22a.22b.22c.22d.22e.22f.22g.22h.22i. fairlead, 26.26a.26b.26c.26d. upper sealing cap syndeton, 27. top crown central supported point, 30. times sealing caps, sealing cap device layer under 30a., sealing cap insulating barrier under 30b., sealing cap supporting layer under 30c., 31.31a.31b.31c.31d. bottom crown mass, 36.36a.36b.36c.36d. bottom crown syndeton, 37. bottom crown central supported point, 40. lead-in wires, 41. metallic films, 50. metal shutters, 51. sensitive structure border structures, 52. upper sealing cap border structure, 53. lower sealing cap border structure, 61. shallow slot structures, 100. microelectromechanicgyroscope gyroscope, 101. silicon nitride mask, 102. silicon oxide masking film, 103. photoresist, 104. dynamic tooth mask patterns, 105. determine tooth mask pattern.
Detailed description of the invention
With reference to the accompanying drawings the specific embodiment of the present invention is described below.
A processing method for four mass silicon microelectromechanicgyroscope gyroscope structures, comprises the steps:
Step one: the lower sealing cap of processing
Step 1.1 cleans lower sealing cap substrate
As shown in Figure 4, first SOI substrate is cleaned before sealing cap under processing, this substrate comprises lower sealing cap device layer 30a, lower sealing cap insulating barrier 30b and lower sealing cap supporting layer 30c, sealing cap device layer 30a is wherein descended to be Si, p-type is adulterated, (111) crystal orientation, thickness is 60 ~ 80 μm, and lower sealing cap insulating barrier 30b is SiO
2, thickness is 1 ~ 2 μm, lower sealing cap supporting layer 30c, and p-type is adulterated, and (111) crystal orientation, thickness is 400 ~ 500 μm.Cleaning is as follows: the first step is at the SC-1 (NH of 70 DEG C ~ 75 DEG C
4oH: H
2o
2: H
2o=1: 1: 5, volume ratio) in cleaning 5 ~ 10min, second step is at the SC-2 (HCl: H of 70 DEG C ~ 75 DEG C
2o
2: H
2o=1: 1: 6, volume ratio) middle cleaning 5 ~ 10min, finally uses deionized water rinsing.
Step 1.2: lower sealing cap substrate processing
Photoetching process is carried out to the substrate cleaned, form mask pattern, carry out the dark silicon etching of deep reaction ion etching again, the thickness of sealing cap device layer 30a under etching depth SOI substrate, form the border structure 53 of lower sealing cap, bottom crown mass 31, bottom crown syndeton 36 and bottom crown central supported point 37, finally utilize the NaOH solution of 5% to remove photoresist.The photoetching of this step, dark silicon etching, employing existing techniques in realizing of removing photoresist.
Step 2: lower sealing cap and sensitive structure bonding
Step 2.1: sensitive structure substrate cleans
First clean SOI substrate, the technical requirement of SOI substrate is identical with the SOI substrate of upper sealing cap, lower sealing cap, and cleaning is identical with cleaning in step 1.1.
Step 2.2: sensitive structure surface structure is processed
Photoetching is carried out to cleaned sensitive structure substrate and forms mask pattern, finally carry out deep reaction ion etching, the silicon materials covered without mask are etched, form shallow slot structure 61, etching depth is tooth and the difference in height Δ T2 determining tooth, be generally 2 ~ 3 μm, and remove photoresist mask by the NaOH solution of 5%.The surface structure of the sensitive structure 10 processed as shown in Figure 7.Photoetching, the deep reaction ion etching of this step, employing existing techniques in realizing of removing photoresist.
Step 2.3: lower sealing cap and sensitive structure bonding
First utilize cleaning cleaning sensitive structure 10 and lower sealing cap 30 in step 1.1, and both aimed at, then carry out Si direct bonding at bonder, anneal after bonding completes in high-temperature annealing furnace, annealing temperature is 1000 DEG C, annealing time 4 hours.Bond area is sensitive structure border structure 51 and lower sealing cap border structure 53, central supported point 17 and bottom crown central supported point 37, sensitive structure syndeton 16 and bottom crown syndeton 36.The upper surface of sensitive structure 10 and lower sealing cap 30 bonding good after structure as shown in Figure 8.
Step 3: processing sensitive structure
Step 3.1: the removal of sensitive structure supporting layer and insulating barrier
Sensitive structure supporting layer 10c removes by the method for mechanical lapping or wet etching, wet etching can adopt KOH solution to corrode, KOH concentration is 40% (mass concentration), corrosion temperature is 80 DEG C, etching time about 10 hours, sensitive structure insulating barrier 10b can adopt buffered HF (HF: NH
4f=1: 5, volume ratio) carry out erosion removal.The sensitive structure supporting layer 10c of removal sensitive structure substrate and the structure of sensitive structure insulating barrier 10b are as shown in Figure 9.The KOH concentration that those skilled in the art utilizes this step to provide, corrosion temperature and etching time can complete the corrosion process of sensitive structure supporting layer 10c, and the buffered HF simultaneously utilizing this step to provide can complete sensitive structure insulating barrier 10b erosion removal.
Step 3.2: silicon nitride mask is graphical
First the surface deposition Si after upper step removes sensitive structure supporting layer 10c and sensitive structure insulating barrier 10b
3n
4mask, depositional mode is enhancement mode plasma PECVD, and film thickness is 400 ~ 500nm, then etches Si by photoetching and RIE
3n
4mask pattern 101.Si
3n
4structure after mask pattern completes as shown in Figure 10.
Step 3.3: growth silica
Thermal oxidation process is adopted to prepare SiO
2mask, upper step removes Si
3n
4si sheet superficial growth SiO after mask
2, form mask pattern 102, SiO
2mask thicknesses is 400 ~ 500nm.Growth SiO
2structure after completing as shown in figure 11.
Step 3.4: sensitive structure mask pattern
Photoetching sensitive structure figure, then RIE etching is carried out to the silicon nitride mask 101 covered without photoresist 103 and silicon oxide masking film 102, form dynamic tooth mask pattern 104 and determine tooth mask pattern 105.Structure after etching sensitive structure mask pattern completes as shown in figure 12.
Step 3.5: etching determines toothing
Deep reaction ion etching is carried out to the sensitive structure device layer 10a covered without mask, forms sensitive structure syndeton 16, central supported point 17 and sensitive structure border structure 51.Etching depth is the thickness of sensitive structure device layer 10a, is 60 ~ 80 μm.Determine toothing etched after structure as shown in figure 13.
Step 3.6: the dynamic toothing of etching
First photoresist is removed, then wet etching Si
3n
4mask, Si
3n
4mask corrosion liquid is the phosphoric acid (H of 80%
3pO
4), corrosion temperature is 160 DEG C ~ 180 DEG C, and etching time is 30 ~ 40min, finally to not having Si
3n
4the sensitive structure device layer 10a that mask covers carries out deep reaction ion etching, forms mass block structure 11, and etching depth is tooth and the difference in height Δ T2 determining tooth, is generally 2 ~ 3 μm.Structure after dynamic toothing has etched as shown in figure 14.
Step 4: sealing cap in processing
Step 4.1: upper sealing cap substrate cleaning
First clean SOI substrate, cleaning method is identical with step 1.1 cleaning.
Step 4.2: upper sealing cap fairlead processing
Mask is prepared in upper and lower for SOI substrate surface simultaneously, first prepares SiO
2mask, then at SiO
2mask prepares Si
3n
4mask.Wherein SiO
2mask adopts thermal oxide mode to prepare, and thickness is 100nm ~ 150nm, Si
3n
4mask adopts low-pressure chemical vapor deposition (LPCVD) mode to prepare, and thickness is 400 ~ 500nm.Then lithography fair lead 22 figure on upper sealing cap supporting layer 20c, recycling RIE etch mask figure, next step wet etching fairlead 22, corrosive liquid is the KOH solution of 40% (mass percent), corrosion temperature is 60 DEG C, and etching time is 8 ~ 10h, and corrosion depth is supporting layer 20c thickness, mask is removed in final etching, Si
3n
4mask corrosion liquid is the phosphoric acid (H of 80% (mass percent)
3pO
4), corrosion temperature is 160 DEG C ~ 180 DEG C, and etching time is 30 ~ 40min, SiO
2mask corrosion liquid is buffered HF (HF: NH
4f=1: 5, volume ratio), corrosion temperature is 50 ~ 60 DEG C.
Step 4.3: upper sealing cap mass processing
Processing method is identical with the processing method of the lower sealing cap device layer 30a in step 1.2, forms mask pattern by photoetching, finally utilizes deep reaction ion etching to carry out dark silicon etching and forms sealing cap device layer 20a structure, and removes residue photoresist mask.Structure after upper sealing cap device layer 20a machines as shown in Figure 6.
Step 5: sensitive structure and upper sealing cap bonding
Bonding process is identical with step 2.3 bonding technology.Bond area is sensitive structure border structure 51 and upper sealing cap border structure 52, central supported point 17 and top crown central supported point 27, sensitive structure syndeton 16 and upper sealing cap syndeton 26.Sensitive structure 10 and upper sealing cap 20 carry out Si direct bonding and form the structure after wafer level packaging as shown in figure 15.
So far the product processed can be called microelectromechanicgyroscope gyroscope 100.
Step 6: metallization
After bonding completes, microelectromechanicgyroscope gyroscope 100 aimed at metal shutter 50 and effectively fixes, then adopting thermal evaporation methods to be coated with metallic film 41 in fairlead 22, making metallic film 41 and upper sealing cap device layer 20a form good ohmic structure.Wherein the thickness of the material of metallic film 41 to be Al or Ti/Pt/Au, Al film thickness be 800 ~ 1000nm, Ti/Pt/Au film is respectively 20nm/50nm/200nm.After plated film terminates, metal shutter 50 is separated with microelectromechanicgyroscope gyroscope 100.Finally, lead-in wire 40 and metallic film 41 are carried out wire bonding, to realize the input and output of signal.Structure after having metallized as shown in Figure 16.
Above-mentioned manufacturing process can as described in the embodiment of the present application according to processing lower sealing cap, lower sealing cap and sensitive structure bonding, process sealing cap in sensitive structure, processing, sensitive structure and upper sealing cap bonding, metallized processing sequence and carry out; Also can according to processing upper sealing cap, sensitive structure and upper sealing cap bonding, process sensitive structure, process sealing cap, lower sealing cap and sensitive structure bonding, metallized order down and process.In addition according to processing lower sealing cap, lower sealing cap and sensitive structure bonding, process sealing cap in sensitive structure, processing, sensitive structure and upper sealing cap bonding, metallized processing sequence and carry out adding man-hour, in processing, the step of sealing cap can be arranged on the lower sealing cap of processing and between lower sealing cap and sensitive structure bonding, also can be arranged on lower sealing cap and sensitive structure bonding and process between sensitive structure; Similar when according to processing upper sealing cap, sensitive structure and upper sealing cap bonding, process sensitive structure, process lower sealing cap, lower sealing cap and sensitive structure bonding, metallized order process time, under processing, the step of sealing cap can be arranged on and process above sealing cap and also can be arranged on sensitive structure and upper sealing cap bonding between sensitive structure and upper sealing cap bonding and process between sensitive structure.
Claims (7)
1. a processing method for four mass silicon microelectromechanicgyroscope gyroscope structures, is characterized in that, comprise the steps:
Step one: the lower sealing cap of processing
Step 1.2: lower sealing cap substrate processing
Photoetching process is carried out to the substrate cleaned, form mask pattern, carry out the dark silicon etching of deep reaction ion etching again, etching depth is the thickness of sealing cap device layer under SOI substrate, form the border structure of lower sealing cap, bottom crown mass, bottom crown syndeton and bottom crown central supported point, the NaOH solution of 5% is finally utilized to remove photoresist
Step 2: lower sealing cap and sensitive structure bonding
Step 2.2: sensitive structure surface structure is processed
Photoetching is carried out to cleaned sensitive structure substrate and forms mask pattern, finally carry out deep reaction ion etching, the silicon materials covered without mask are etched, form shallow slot structure, etching depth is tooth and the difference in height △ T2 determining tooth, be 2 ~ 3 μm, and remove photoresist mask by the NaOH solution of 5%
Step 2.3: lower sealing cap and sensitive structure bonding
Sensitive structure and lower sealing cap are aimed at, then Si direct bonding is carried out at bonder, anneal in high-temperature annealing furnace after bonding completes, annealing temperature is 1000 DEG C, annealing time 4 hours, bond area is sensitive structure border structure and lower sealing cap border structure, central supported point and bottom crown central supported point, sensitive structure syndeton and bottom crown syndeton
Step 3: processing sensitive structure
Step 3.1: the removal of sensitive structure supporting layer and insulating barrier
Sensitive structure supporting layer is removed by the method for mechanical lapping or wet etching, and wet etching adopts KOH solution to corrode, and KOH concentration is 40%, mass concentration, corrosion temperature is 80 DEG C, etching time about 10 hours, sensitive structure insulating barrier adopts buffered HF, HF:NH
4f=1:5, volume ratio, carry out erosion removal, remove the sensitive structure supporting layer of sensitive structure substrate and the structure of sensitive structure insulating barrier, the KOH concentration utilizing this step to provide, corrosion temperature and etching time can complete the corrosion process of sensitive structure supporting layer, and the buffered HF simultaneously utilizing this step to provide completes sensitive structure insulating barrier erosion removal
Step 3.2: silicon nitride mask is graphical
First the surface deposition Si after upper step removes sensitive structure supporting layer and sensitive structure insulating barrier
3n
4mask, depositional mode is enhancement mode plasma PECVD, and film thickness is 400 ~ 500nm, then etches Si by photoetching and RIE
3n
4mask pattern,
Step 3.3: growth silica
Thermal oxidation process is adopted to prepare SiO
2mask, upper step removes Si
3n
4si sheet superficial growth SiO after mask
2, form mask pattern, SiO
2mask thicknesses is 400 ~ 500nm,
Step 3.4: sensitive structure mask pattern
Photoetching sensitive structure figure, then RIE etching is carried out to the silicon nitride mask covered without photoresist and silicon oxide masking film, form dynamic tooth mask pattern and determine tooth mask pattern,
Step 3.5: etching determines toothing
Carry out deep reaction ion etching to the sensitive structure device layer covered without mask, form sensitive structure syndeton, central supported point and sensitive structure border structure, etching depth is the thickness of sensitive structure device layer, is 60 ~ 80 μm,
Step 3.6: the dynamic toothing of etching
First photoresist is removed, then wet etching Si
3n
4mask, Si
3n
4mask corrosion liquid is the phosphoric acid of 80%, H
3pO
4, corrosion temperature is 160 DEG C ~ 180 DEG C, and etching time is 30 ~ 40min, finally to not having Si
3n
4the sensitive structure device layer that mask covers carries out deep reaction ion etching, forms mass block structure, and etching depth is tooth and the difference in height △ T2 determining tooth, is 2 ~ 3 μm,
Step 4: sealing cap in processing
Step 4.2: upper sealing cap fairlead processing
Mask is prepared in upper and lower for SOI substrate surface simultaneously, first prepares SiO
2mask, then at SiO
2mask prepares Si
3n
4mask, wherein SiO
2mask adopts thermal oxide mode to prepare, and thickness is 100nm ~ 150nm, Si
3n
4mask adopts low-pressure chemical vapor deposition, LPCVD, prepared by mode, thickness is 400 ~ 500nm, then lithography fair lead figure on upper sealing cap supporting layer, recycling RIE etch mask figure, next step wet etching fairlead, corrosive liquid is 40%, mass percent, KOH solution, corrosion temperature is 60 DEG C, and etching time is 8 ~ 10h, and corrosion depth is supporting layer thickness, mask is removed in final etching, Si
3n
4mask corrosion liquid is 80%, mass percent, phosphoric acid, H
3pO
4, corrosion temperature is 160 DEG C ~ 180 DEG C, and etching time is 30 ~ 40min, SiO
2mask corrosion liquid is buffered HF, HF:NH
4f=1:5, volume ratio, corrosion temperature is 50 ~ 60 DEG C,
Step 4.3: upper sealing cap mass processing
Processing method is identical with the processing method of the lower sealing cap device layer in step 1.2, forms mask pattern by photoetching, finally utilizes deep reaction ion etching to carry out dark silicon etching and forms sealing cap device layer structure, and removes residue photoresist mask,
Step 5: sensitive structure and upper sealing cap bonding
Bonding process is identical with step 2.3 bonding technology, and bond area is sensitive structure border structure and upper sealing cap border structure, central supported point and top crown central supported point, sensitive structure syndeton and upper sealing cap syndeton,
So far the product processed can be called microelectromechanicgyroscope gyroscope,
Step 6: metallization
After bonding completes, microelectromechanicgyroscope gyroscope is aimed at metal shutter and effectively fixes, thermal evaporation methods is adopted to be coated with metallic film again in fairlead, metallic film and upper sealing cap device layer is made to form good ohmic structure, wherein the material of metallic film is Al or Ti/Pt/Au, Al film thickness is 800 ~ 1000nm, the thickness of Ti/Pt/Au film is respectively 20nm/50nm/200nm, after plated film terminates, metal shutter is separated with microelectromechanicgyroscope gyroscope, finally, lead-in wire and metallic film are carried out wire bonding, to realize the input and output of signal.
2. the processing method of four mass silicon microelectromechanicgyroscope gyroscope structures as claimed in claim 1, is characterized in that: manufacturing process according to processing lower sealing cap, lower sealing cap and sensitive structure bonding, process sealing cap in sensitive structure, processing, sensitive structure and upper sealing cap bonding, metallized processing sequence and carry out; Or according to processing upper sealing cap, sensitive structure and upper sealing cap bonding, process sensitive structure, process sealing cap, lower sealing cap and sensitive structure bonding, metallized order down and process.
3. the processing method of four mass silicon microelectromechanicgyroscope gyroscope structures as claimed in claim 1, is characterized in that: according to sealing cap, lower sealing cap and sensitive structure bonding in the lower sealing cap of processing, processing, process sensitive structure, sensitive structure and upper sealing cap bonding, metallized processing sequence and process.
4. the processing method of four mass silicon microelectromechanicgyroscope gyroscope structures as claimed in claim 1, is characterized in that: according to sealing cap in processing lower sealing cap, lower sealing cap and sensitive structure bonding, processing, process sensitive structure, sensitive structure and upper sealing cap bonding, metallized processing sequence and process.
5. the processing method of four mass silicon microelectromechanicgyroscope gyroscope structures as claimed in claim 1, is characterized in that: according to the upper sealing cap of processing, processing lower sealing cap, sensitive structure and upper sealing cap bonding, process sensitive structure, lower sealing cap and sensitive structure bonding, metallized order processes.
6. the processing method of four mass silicon microelectromechanicgyroscope gyroscope structures as claimed in claim 1, is characterized in that: according to processing upper sealing cap, sensitive structure and upper sealing cap bonding, process down sealing cap, process sensitive structure, lower sealing cap and sensitive structure bonding, metallized order processes.
7. the processing method of four mass silicon microelectromechanicgyroscope gyroscope structures as claimed in claim 1, is characterized in that: in step one, increase following step
Step 1.1 cleans lower sealing cap substrate
Under processing, first clean SOI substrate before sealing cap, this substrate comprises lower sealing cap device layer, lower sealing cap insulating barrier and lower sealing cap supporting layer, wherein descends sealing cap device layer to be Si, p-type is adulterated, (111) crystal orientation, thickness is 60 ~ 80 μm, and lower sealing cap insulating barrier is SiO
2, thickness is 1 ~ 2 μm, lower sealing cap supporting layer, and p-type is adulterated, (111) crystal orientation, and thickness is 400 ~ 500 μm, and cleaning is as follows: the first step is at the SC-1 of 70 DEG C ~ 75 DEG C, NH
4oH:H
2o
2: H
2o=1:1:5, cleans 5 ~ 10min in volume ratio, and second step is at the SC-2 of 70 DEG C ~ 75 DEG C, HCl:H
2o
2: H
2o=1:1:6, cleans 5 ~ 10min in volume ratio, finally uses deionized water rinsing,
Following step is increased in step 2:
Step 2.1: sensitive structure substrate cleans
First clean SOI substrate, the technical requirement of SOI substrate is identical with the SOI substrate of upper sealing cap, lower sealing cap, and cleaning is identical with cleaning in step 1.1,
Following step is increased in step 4:
Step 4.1: upper sealing cap substrate cleaning
First clean SOI substrate, cleaning method is identical with step 1.1 cleaning.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210017609.0A CN103213939B (en) | 2012-01-19 | 2012-01-19 | A kind of processing method of four mass silicon microelectromechanicgyroscope gyroscope structures |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210017609.0A CN103213939B (en) | 2012-01-19 | 2012-01-19 | A kind of processing method of four mass silicon microelectromechanicgyroscope gyroscope structures |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103213939A CN103213939A (en) | 2013-07-24 |
| CN103213939B true CN103213939B (en) | 2016-01-20 |
Family
ID=48812172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210017609.0A Active CN103213939B (en) | 2012-01-19 | 2012-01-19 | A kind of processing method of four mass silicon microelectromechanicgyroscope gyroscope structures |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103213939B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104976996B (en) * | 2015-08-07 | 2017-11-21 | 中国人民解放军国防科学技术大学 | Nested ring type MEMS oscillation gyros with period profile lumped mass block |
| CN105424017B (en) * | 2016-01-12 | 2017-01-18 | 中国人民解放军国防科学技术大学 | Three-layer-structure silicon micro gyroscope based on tangential electrostatic force driving |
| US10696541B2 (en) | 2016-05-26 | 2020-06-30 | Honeywell International Inc. | Systems and methods for bias suppression in a non-degenerate MEMS sensor |
| US10371521B2 (en) | 2016-05-26 | 2019-08-06 | Honeywell International Inc. | Systems and methods for a four-mass vibrating MEMS structure |
| CN114623955A (en) * | 2021-10-18 | 2022-06-14 | 胡耿 | Micro-polar distance capacitance type force-sensitive sensor and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101844739A (en) * | 2009-03-27 | 2010-09-29 | 深迪半导体(上海)有限公司 | Manufacturing method of subminiature MEMS gyroscope sensor |
| CN102052920A (en) * | 2010-11-23 | 2011-05-11 | 孙博华 | Wheeled single-structure three-axis micromechanical gyroscope |
| CN102134053A (en) * | 2010-01-21 | 2011-07-27 | 深迪半导体(上海)有限公司 | Manufacturing method of biaxial MEMS (micro-electro-mechanical system) gyroscope |
-
2012
- 2012-01-19 CN CN201210017609.0A patent/CN103213939B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101844739A (en) * | 2009-03-27 | 2010-09-29 | 深迪半导体(上海)有限公司 | Manufacturing method of subminiature MEMS gyroscope sensor |
| CN102134053A (en) * | 2010-01-21 | 2011-07-27 | 深迪半导体(上海)有限公司 | Manufacturing method of biaxial MEMS (micro-electro-mechanical system) gyroscope |
| CN102052920A (en) * | 2010-11-23 | 2011-05-11 | 孙博华 | Wheeled single-structure three-axis micromechanical gyroscope |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103213939A (en) | 2013-07-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103213939B (en) | A kind of processing method of four mass silicon microelectromechanicgyroscope gyroscope structures | |
| CN105353506B (en) | Vertical comb teeth drives MOEMS micro mirror and preparation method thereof | |
| US20060281212A1 (en) | Stacked structure and production method thereof | |
| CN102721829B (en) | Capacitive micro acceleration sensor and uni-wafer manufacturing method thereof | |
| JP2007033355A (en) | Method of manufacturing semiconductor sensor, and semiconductor sensor | |
| EP1433199B1 (en) | Method for forming a cavity structure in an soi substrate and cavity structure formed in an soi substrate | |
| CN102122935A (en) | Micro-mechanical resonator having submicron clearances and manufacturing method thereof | |
| CN103241704B (en) | Three-dimensional integrated sensor and preparation method thereof | |
| US20150291414A1 (en) | Mems device having conductive microstructures laterally surrounded by oxide material | |
| CN101446682A (en) | Continuous diaphragm type micro deformable mirror based on SOI and preparation method thereof | |
| JP4081868B2 (en) | Manufacturing method of micro device | |
| CN102375332B (en) | Suspension photoresist planarization technology for MEMS structure | |
| CN109387893A (en) | The manufacturing method of micro-reflector | |
| CN104003350B (en) | A kind of wafer-grade vacuum encapsulation method of body silicon resonance type pressure transducer | |
| CN106379858A (en) | Manufacturing method of micro-electromechanical device, micro-electromechanical device and micro-electromechanical device base structure | |
| CN104555893B (en) | The method that inductive material film is formed in deep trench | |
| CN112661105B (en) | Manufacturing method of MEMS (micro-electromechanical systems) high-low comb tooth structure based on comb tooth local oxidation | |
| CN105399047A (en) | Method for machining multi-capacitor comb micro-accelerometer | |
| CN108557753A (en) | A kind of islands MEMS-beam-film device and preparation method thereof | |
| CN208753320U (en) | A kind of micro-bridge structure and microelectronic component | |
| CN105293423B (en) | MEMS single-wafer integration method based on five layers of SOI silicon wafers | |
| US8685777B2 (en) | Method for fabricating a fixed structure defining a volume receiving a movable element in particular of a MEMS | |
| CN102674240B (en) | Micromechanical sensor and manufacturing method thereof | |
| JPH10178183A (en) | Semiconductor inertial sensor and manufacture thereof | |
| US10775253B2 (en) | Method for producing a micromechanical component with an exposed pressure sensor device and micromechanical component |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |