CN102122935A - Micro-mechanical resonator having submicron clearances and manufacturing method thereof - Google Patents
Micro-mechanical resonator having submicron clearances and manufacturing method thereof Download PDFInfo
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Abstract
The invention relates to a micro-mechanical resonator having submicron clearances and a manufacturing method thereof. The micro-mechanical resonator having submicron clearances has a 'sandwich' structure which is formed by bonding following three layers of silicon wafers: a cover plate silicon wafer, a structural silicon wafer and a substrate silicon wafer, wherein the structural silicon wafer is used for manufacturing an oscillator of the resonator; the cover plate silicon wafer and the substrate silicon wafer are used for manufacturing fixed electrodes used for driving and defecting; the submicron clearances among the oscillator of the resonator and the fixed electrodes are formed by using a wafer level aligning bonding technique; and the sizes of the clearances are not limited by the photo-etching process but determined by the thickness of an insulating medium layer on the cover plate silicon wafer or the substrate silicon wafer. By using the manufacturing method of the micro-mechanical resonator, provided by the invention, the submicron clearances are formed by using the wafer level aligning bonding technique and the vacuum sealing for resonator is realized while the resonator structure is formed, thereby reducing the difficulty in designing and manufacturing the resonator, increasing the resonator performance and yield, reducing the size and the cost of the resonator.
Description
Technical field
The present invention relates to a kind of micromechanical resonator and manufacture method, belong to micromechanical resonator processing and Micrometer-Nanometer Processing Technology field with sub-micron gap.
Background technology
Clock chip has important effect as the time reference source in the Circuits System in Circuits System.Traditional clock chip generally adopts quartz crystal oscillator to produce signal waveform as resonator.But quartz crystal oscillator generally is to adopt cutting technique to make, so its volume is difficult to reduce, thereby has hindered the microminiaturization of Circuits System.In addition, quartz crystal oscillator also can't with the integrated making of Circuits System, improved cost of manufacture.In recent years, because the development of micro-processing technology, the MEMS micromechanical resonator obtains very big development.The MEMS resonator has that size is little, power consumption is little, cost is low, with CMOS IC (Complementary Metal Oxide Semiconductor Integrated Circuit, complementary mos integrated circuit) technology advantage such as compatibility mutually, demand in fields such as wireless telecommunications grows with each passing day, and will become the substitute of crystal resonator.
The key property parameter of micromechanical resonator has: resonance frequency, quality factor (Q), frequency temperature are floated etc.Wherein, the Q value of resonator is one of most important parameter of reaction resonator characteristics, and it can be expressed as:
Wherein Q is the total quality factor size of resonator, Q
AirBe the energy loss mechanism that causes by air damping, Q
AnchorBe the energy loss mechanism that causes by anchor point, Q
TEDBe the thermoelasticity energy loss mechanism of material, Q
OthersThe energy loss mechanism of representing other.In these four kinds of energy loss mechanism, back three kinds is to be caused by factors such as the material of making resonator and structural designs thereof, and first kind to be vacuum degree by the resonator works environment cause.Resonator is carried out vacuum seal, just can reduce consumption greatly because the energy that air damping causes looses, thereby improve the Q value (Khine of resonator greatly, L and M Palaniapan, High-Q bulk-mode SOI square resonators with straight-beam anchors.Journal ofMicromechanics and Microengineering, 2009.19 (1): p.015017).
The driving of micromechanical resonator and detection principle mainly contain: electrostatic force conversion, piezoelectric effect, piezoresistive effect, thermoelectric effect etc.Condenser type drive and detection method be by electrostatic force to external world signal handle since have low in energy consumption, advantage such as structure fabrication is simple, and technology is simple, condenser type drives and detects sensing and the braking that is widely used in micro-structural.Electrostatic force in condenser type driving and the detection method can be represented by (2) formula:
Wherein F is the electrostatic force size, and ε is an electric medium constant, and A is a pole plate area size, and d is spacing (C G Mattsson, K.B., the G between the two-plate
H-E Nilsson and H Martin, Thermal simulation and design optimization of a thermopile infrared detector with an SU-8membrane.Journal of Micromechanics and Microengineering, 2009.19 (5): p.055016.).As can be seen, improve electrostatic force if desired improving the sensitivity of device from (2) formula, effective method is exactly the gap that reduces between the pole plate, because electrostatic force and pole plate gap are the relations of being inversely proportional to.
Usually the capacitance type micro mechanical resonator comprises resonance oscillator, fixedly elastic construction, drive electrode and detecting electrode four part-structures of oscillator.Traditional MEMS resonator generally all is to make the resonator structure earlier, makes the cover plate silicon chip then, at last resonator is encapsulated through row, and its complex process, difficulty of processing is big.Gap between traditional resonator structure generally is by lithographic definition, if reduce the gap, just needs to improve the precision of photoetching, is difficult to produce the sub-micron interstitial structure.In addition, also have and utilize oxidation polysilicon or the big gap of monocrystalline silicon thin film to make the method in sub-micron gap, but it still needs photoetching process to define a big interstitial structure, utilize thermal oxidation technology in film interstital growth oxide layer then, big gap is converted into the sub-micron interstitial structure, this method complex manufacturing technology, the cost of manufacture height.
Summary of the invention
Problem at existing in traditional micromechanical resonator processing the objective of the invention is to propose a kind of have sub-micron gap micromechanical resonator and manufacture method.The present invention is intended to utilize simple technology and cheap cost, realizes the making in micromechanical resonator sub-micron gap and the vacuum seal of device.So the obvious characteristics of the present invention forms resonator sub-micron gap utilizing the wafer level vacuum to aim at bonding, when having made resonator structure, realization is to the vacuum seal of resonator.The size in sub-micron gap is by the thickness decision of the electric insulating medium layer on cover plate silicon chip or the silicon substrate.
Micromechanical resonator of the present invention comprises silicon substrate, structure silicon chip, cover plate silicon chip, the resonance oscillator, the fixing elastic construction of oscillator, the electric insulating medium layer between structure silicon chip and silicon substrate and the cover plate silicon chip, metal pad, electrode is drawn through hole, and basic functional principle is as shown in Figure 1.Its resonance oscillator can be circular columns or square column, also can be circular slab or square plate.The both sides, top and bottom of resonance oscillator are respectively fixed drive electrode and fixed test electrode, when between fixed drive electrode and resonance oscillator, applying alternating voltage like this, the alternation electrostatic force that is produced by alternating voltage can encourage oscillator to enter the mode of resonance of appointment, by detecting the variation of output electrode end output current, just resonator signal can be exported then.The elastic construction that is used for fixing the resonance oscillator is elastic plate or spring beam; The elastic construction that is used for fixing the resonance oscillator is positioned in the middle of the resonance oscillator, is positioned at resonance oscillator one end or is positioned at resonance oscillator two ends.
The resonator that the present invention proposes is the sandwich structure that is together formed by silicon substrate, structure silicon chip and three layers of wafer bonding of cover plate silicon chip, the front of silicon substrate and structure silicon chip back, the front of structure silicon chip and cover plate silicon chip back lump together by the wafer level alignment keys respectively.The sub-micron gap of resonator is to aim at bonding formation by structure silicon chip and silicon substrate with submicron order degree of depth curved cavity or cover plate silicon chip being carried out wafer level.The structure silicon chip is between silicon substrate and cover plate silicon chip, respectively there is curved cavity at the silicon substrate front and the cover plate silicon chip back side, these two cavitys are formed a vacuum tightness chamber, fixedly in the vacuum tightness chamber of the elastic construction of resonance oscillator with the unsettled cavity composition on silicon substrate and cover plate silicon chip of resonance oscillator.
Compare with the structure of general micromechanical resonator:
The micromechanical resonator that the present invention proposes is made by wafer level vacuum aligning bonding by silicon substrate, structure silicon chip and three layers of silicon chip of cover plate silicon chip;
The silicon substrate of the micromechanical resonator that the present invention proposes and cover plate silicon chip also are used as the fixed electrode of the driving and the detection that are device simultaneously not only for resonator provides the vacuum tightness chamber;
Has curved cavity on the silicon substrate of the micromechanical resonator that the present invention proposes and the cover plate silicon chip;
Have electrode on the cover plate silicon chip of the micromechanical resonator that the present invention proposes and draw through hole.
Compare with general micromechanical resonator manufacture method:
The manufacture method of the micromechanical resonator that the present invention proposes when having made device architecture, has been finished the wafer level Vacuum Package of device, need not the vacuum encapsulation process of follow-up complexity, has reduced the complexity of design and processing, has improved device performance.
The micromechanical resonator that the present invention proposes utilizes bonding technology to make the device gap, does not have problems such as the easily glutinous company of the structure that exists in the structure dispose procedure, the movable structure that needs protection, and has simplified processing technology, has improved rate of finished products.
The present invention utilizes wafer level to aim at bonding technology and forms the sub-micron gap, and not limited by photoetching technique, reduces difficulty, complexity and the cost of making the sub-micron gap;
Because the manufacture method that the present invention proposes has just been carried out wafer level vacuum seal with device when having made the resonator structure, reduced the complexity of design and processing; Adopt wafer level to aim at bonding technology and form the sub-micron gap, reduced the difficulty and the complexity of making the sub-micron gap; Device is carried out the wafer level Vacuum Package, not only improved device performance, reduced cost, and be applicable to batch process.
Realize that technical scheme of the present invention is:
(1) to the structure silicon chip carry out oxidation, photoetching and graphical after, utilize deep reaction ion etching technology to make resonator oscillator the latter half structure;
(2) carry out etching at the positive electric insulating medium layer that deposits one deck submicron thickness of silicon substrate, and to the electric insulating medium layer, form curved cavity;
(3) the structure silicon chip that step (1) is obtained carries out the wafer level vacuum with silicon substrate that step (2) obtains and aims at bonding, forms the sub-micron gap between resonance oscillator the latter half structure and fixed electrode;
(4) the structure silicon chip that obtains of oxidation step (3), and oxide layer carried out photoetching and etching, utilize deep reaction ion etching technology to produce the first half structure of resonator oscillator;
(5) carry out etching at the electric insulating medium layer of cover plate silicon chip backside deposition one deck submicron thickness, and to the electric insulating medium layer, form curved cavity;
(6) the structure silicon chip that step (4) is obtained carries out the wafer level vacuum with cover plate silicon chip that step (5) obtains and aims at bonding, forms the sub-micron gap between resonance oscillator the first half structure and fixed electrode; The structure silicon chip is between silicon substrate and cover plate silicon chip;
(7) etch electrode in cover plate silicon chip front and draw through hole, erode the electric insulating medium layer that electrode is drawn the lead to the hole site place;
(8) the positive and silicon substrate backside deposition metal level at the cover plate silicon chip, and, make metal pad with metallic layer graphic.
In a word, the present invention relates to a kind of micromechanical resonator and manufacture method, it is characterized in that resonator forms " sandwich " structure by cover plate silicon chip, structure silicon chip and three layers of wafer bonding of silicon substrate with sub-micron gap.The structure silicon chip is used for making the oscillator of resonator, and cover plate silicon chip and silicon substrate are used for making the fixed electrode that drives and detect respectively.Sub-micron gap between resonator oscillator and fixed electrode is aimed at bonding technology by wafer level and is formed, and gap length is not limited by photoetching process, but by the thickness decision of the electric insulating medium layer on cover plate silicon chip or the silicon substrate.Described electric insulating medium layer is silicon nitride or silica, but is not only limited to this; The scolder of the bonding between described structure silicon chip and silicon substrate, structure silicon chip and the cover plate silicon chip is metal, polymer or glass paste, also is not only limited to this.The manufacture method of the micromechanical resonator that the present invention proposes, utilize wafer level to aim at bonding and form the sub-micron gap, when having made device architecture, realized wafer level vacuum seal to device, not only reduced the difficulty of designs and making, device performance and rate of finished products have been promoted, and reduced device size, reduced cost.And can on the cover plate silicon chip, make the cmos circuit part, and then carry out the solder bonding, realize the integrated of resonator and cmos circuit with the structure silicon chip.
Description of drawings
Fig. 1-the 1st, circular columns micromechanical resonator operation principle schematic diagram, (a) be resonator overall structure cutaway view, wherein (i) unsettled oscillator elastic construction is positioned at the oscillator middle part, (ii) unsettled oscillator elastic construction is positioned at position, oscillator top, and (iii) unsettled oscillator elastic construction is positioned at the oscillator two ends; (b) be oscillator structure vertical view.
Fig. 1-2 is a square plate micromechanical resonator operation principle schematic diagram, (a) is cutaway view, (b) is vertical view.
Fig. 2 is the concrete technological process of embodiment 1.
Fig. 2-1: the structure silicon chip after the oxidation is carried out photoetching and etching.
Fig. 2-2: utilize deep reaction ion etching technology to etch the latter half structure of resonator oscillator.
Fig. 2-3: at the electric insulating medium layer of the positive deposition of silicon substrate one deck submicron thickness, and it is graphical.
Fig. 2-4: structure silicon chip and silicon substrate are carried out the wafer level vacuum aim at bonding.
Fig. 2-5: thermal oxidation structure silicon chip, and its frontside oxide layer carried out photoetching and graphical.
Fig. 2-6: utilize deep reaction ion etching technology to etch the first half structure of resonator oscillator.
Fig. 2-7: at the electric insulating medium layer of cover plate silicon chip backside deposition one deck submicron thickness, and it is graphical.
Fig. 2-8: structure silicon chip and cover plate silicon chip are carried out wafer level vacuum aligning bonding.
Fig. 2-9: on the cover plate silicon chip, make electrode and draw through hole.
Fig. 2-10: depositing metal layers, make metal pad.
Fig. 3 is the resulting devices structure of embodiment 2.
Fig. 4 is the concrete technological process of embodiment 3.
Fig. 4-1: at the electric insulating medium layer of the positive deposition of silicon substrate one deck submicron thickness, and it is graphical.
Fig. 4-2: structure silicon chip and silicon substrate are carried out wafer level aligning bonding, and the structure wafer thinning is arrived the thickness that needs.
Fig. 4-3: utilize deep reaction ion etching technology to etch resonator oscillator structure.
Fig. 4-4: at the electric insulating medium layer of the positive deposition of cover plate silicon chip one deck submicron thickness, and it is graphical.
Fig. 4-5: structure silicon chip and cover plate silicon chip are carried out wafer level vacuum aligning bonding.
Fig. 4-6: on the cover plate silicon chip, make electrode and draw through hole.
Fig. 4-7: depositing metal layers, make metal pad.
Fig. 5 is embodiment 4 resulting devices structures.
Fig. 6 is embodiment 5 concrete technological processes.
Fig. 6-1: silicon substrate front etch or the solder that etches;
Fig. 6-2: form curved cavity;
Fig. 6-3: the sub-micron gap that forms between resonance oscillator Lower Half structure and fixed electrode;
Fig. 6-4: depositing metal layers, produce metal pad.
Fig. 7 is embodiment 6 resulting devices structures.
The implication of each digitized representation is among the figure:
1 silicon substrate; 2 structure silicon chips; 3 cover plate silicon chips; 4 electrodes are drawn through hole; 5 silica; 6 resonance oscillators; 7 unsettled oscillator structures; 11 electric insulating medium layers; 12 sub-micron gaps; 13 metal pads; 14 bonding solder layers; 15 bonding solder; The 16CMOS circuit; 21 silicon chip fronts; The 22 silicon chip back sides.
With the resulting devices structure is reference, and structure silicon chip, silicon substrate and cover plate silicon chip one side up are the silicon chip front, and one side down is the silicon chip back side.Show as Fig. 2-10.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail.
Structure silicon chip, silicon substrate and cover plate silicon chip are all selected low resistance silicon chip for use, and resistivity is 0.01-1 Ω cm.The structure silicon chip is used for making resonance oscillator structure, and the resonance oscillator is the movable electrode of resonator capacitor driving and capacitance detecting.The resonance oscillator can be a circular columns, also can be square column.Fixedly the elastic construction of oscillator can be an elastic plate, also can be spring beam.Silicon substrate and cover plate silicon chip are used for forming the fixed electrode of resonator capacitor driving and capacitance detecting respectively.Present embodiment adopts wafer level silicon silicon vacuum to aim at bonding, and being deposited on silicon substrate electric insulating medium layer positive and the cover plate silicon chip back side can be silica, also can be silicon nitride.Sub-micron gap length scope between fixed electrode and the resonance oscillator is 0.05-2 μ m.The main technique step comprises:
(1) oxidation structure silicon chip carries out photoetching and etching to structure silicon chip back side silica.See Fig. 2-1.
(2) go out the latter half structure of resonator oscillator at structure silicon chip back-etching.See Fig. 2-2.
(3), and this electric insulating medium layer carried out photoetching and etching forms curved cavity at the electric insulating medium layer of the positive deposition of silicon substrate one deck submicron thickness.See Fig. 2-3.
(4) erode silica on the structure silicon chip that step (2) obtains, the silicon substrate front that its back side and step (3) are obtained is carried out the wafer level vacuum and is aimed at bonding then, forms the sub-micron gap between resonance oscillator the latter half structure and fixed electrode.See Fig. 2-4.
(5) the structure silicon chip that obtains of oxidation step (4), and its frontside oxide layer carried out photoetching and etching.See Fig. 2-5.
(6) etch the first half structure of resonator oscillator in structure silicon chip front.See Fig. 2-6.
(7), and this electric insulating medium layer carried out photoetching and etching forms curved cavity at the electric insulating medium layer of cover plate silicon chip backside deposition one deck submicron thickness.See Fig. 2-7.
(8) erode oxide layer on the structure silicon chip that step (6) obtains, it is positively carried out the wafer level vacuum with the cover plate silicon chip back side that step (7) obtains and aim at bonding, the sub-micron gap between formation resonator oscillator the first half structure and fixed electrode.See Fig. 2-8.
(9) draw through hole at the positive electrode of making of cover plate silicon chip, and erode the electric insulating medium layer that electrode is drawn the lead to the hole site place.See Fig. 2-9.
(10) carry out graphically at cover plate silicon chip front and silicon substrate backside deposition metal level, and with metal level, make metal pad.See Fig. 2-10.
Present embodiment adopts wafer level scolder vacuum to aim at bonding, and the bonding scolder can be metal, polymer, also can be glass paste.
Its concrete implementation step part is identical with embodiment 1, the main distinction is: first, in embodiment 1 step (3) and step (7), at first on silicon substrate and cover plate silicon chip, deposit one deck electric insulating medium layer, on the electric insulating medium layer, deposit or spin coating one deck solder layer again, and it is carried out photoetching, respectively solder layer and electric insulating medium layer are carried out etching or corrosion then; Second, in embodiment 1 step (4) and step (8), oxide layer on the corrosion structure silicon chip, deposition or spin coating one deck solder layer on the structure silicon chip, and it is carried out photoetching and etching, at last respectively with embodiment 1 in the silicon chip that obtains of step (3) and step (7) carry out wafer level scolder vacuum and aim at bonding.All the other processing steps are constant.The resulting devices geometric configuration as shown in Figure 3.
The resonance oscillator can be a circular slab, also can be square plate.Fixedly the structure of oscillator is a spring beam.Silicon substrate and cover plate silicon chip are used for forming the fixed electrode of resonator capacitor driving and capacitance detecting respectively.Sub-micron gap length scope between fixed electrode and the resonance oscillator is 0.05 μ m-2 μ m.The main technique step comprises:
(1) carries out photoetching and the graphical curved cavity that forms at the electric insulating medium layer of the positive deposition of silicon substrate one deck submicron thickness, and to this electric insulating medium layer.See Fig. 4-1.
(2) utilize the wafer level vacuum to aim at bonding technology, the front of the silicon substrate that the structure silicon chip back side and step (1) are obtained is bonded together, and the method attenuate structure silicon chip front by physics attenuate or chemical reduction, with the structure wafer thinning to needed thickness.See Fig. 4-2.
(3) carry out photoetching and graphical in structure silicon chip front, etch resonator structure.See Fig. 4-3.
(4), and this electric insulating medium layer carried out photoetching and the graphical curved cavity that forms at the electric insulating medium layer of cover plate silicon chip backside deposition one deck submicron thickness.See Fig. 4-4.
(5) utilize the wafer level vacuum to aim at bonding technology, the front of the structure silicon chip that step (3) is obtained and the cover plate silicon chip back that step (4) obtains are bonded together.See Fig. 4-5.
(6) draw through hole at the positive electrode of making of cover plate silicon chip, and erode the electric insulating medium layer that electrode is drawn the lead to the hole site place.See Fig. 4-6.
(7) carry out graphically at cover plate silicon chip front and silicon substrate backside deposition metal level, and with metal level, make metal pad.See Fig. 4-7.
Its concrete implementation step part is identical with embodiment 1; the main distinction is: in embodiment 1 step (1) and step (5); before etching is made device architecture; device architecture is partly protected; then that device architecture on the structure silicon chip is outer other parts are carried out whole attenuate, make device architecture part projective structure silicon chip surface.Other processing step is constant.The resulting devices geometric configuration as shown in Figure 5.
Present embodiment adopts wafer level scolder vacuum to aim at bonding, and the bonding scolder can be metal, polymer, also can be glass paste.Can make scolder complete filling full weld material groove and nothing overflow by the degree of depth of control solder in the present embodiment, thereby guarantee that the structure silicon chip surface contacts fully with silicon substrate and cover plate silicon chip surface.Silicon substrate and cover plate silicon chip are used for forming the fixed electrode of resonator capacitor driving and capacitance detecting respectively.Sub-micron gap length scope between fixed electrode and the resonance oscillator is 0.05 μ m-2 μ m.The main technique step comprises:
The main technique step comprises:
(1) goes out the latter half structure of resonator oscillator at structure silicon chip back-etching.
(2) at the silicon substrate front etch or etch the bonding solder.See Fig. 6-1.
(3), and this electric insulating medium layer carried out photoetching and etching forms curved cavity at the electric insulating medium layer of the positive deposition of silicon substrate one deck submicron thickness.See Fig. 6-2.
(4) the structure silicon chip back side that step (1) is obtained is carried out wafer level scolder vacuum with the silicon substrate front that step (3) obtains and is aimed at bonding, forms the sub-micron gap between resonance oscillator the latter half structure and fixed electrode.See Fig. 6-3.
(5) etch the first half structure of resonator oscillator in the structure silicon chip front that step (4) obtains.
(6) corrosion or etch the bonding solder on the cover plate silicon chip back side.
(7), and this electric insulating medium layer carried out photoetching and etching forms curved cavity at the electric insulating medium layer of cover plate silicon chip backside deposition one deck submicron thickness.
(8) the structure silicon chip front that step (5) is obtained is carried out wafer level scolder vacuum with the cover plate silicon chip back side that step (7) obtains and is aimed at bonding, forms the sub-micron gap between resonator oscillator the first half structure and fixed electrode.
(9) draw through hole at the positive electrode of making of cover plate silicon chip, and erode the electric insulating medium layer that electrode is drawn the lead to the hole site place.
(10) carry out graphically at cover plate silicon chip front and silicon substrate backside deposition metal level, and with metal level, make metal pad.See Fig. 6-4.
Present embodiment adopts wafer level solder bonding, and the bonding scolder can be metal, polymer, also can be glass paste.
Its concrete implementation step part is identical with embodiment 5, the main distinction is: first, in embodiment 5 steps (8), before vacuum is aimed at bonding, earlier on the cover plate silicon chip, produce cmos circuit, and then utilize the solder bonding technology that itself and structure silicon chip are carried out wafer level solder bonding by CMOS technology.The second, in embodiment 5 steps (10), make after the metal pad, utilize routing technology to realize the pin interconnection of resonator and cmos circuit.Other processing step is constant.The resulting devices geometric configuration as shown in Figure 7.
By the introduction of the foregoing description as can be seen the method in the sub-micron gap mentioned of the present invention have following several:
1) deposits the electric insulating medium layer of one deck submicron thickness on the positive and cover plate silicon chip back side respectively at silicon substrate, the electric insulating medium layer that etches away resonance oscillator corresponding position respectively forms curved cavity, then silicon substrate, cover plate silicon chip is carried out wafer level with the structure silicon chip respectively and aims at sub-micron gap between bonding formation resonance oscillator and fixed electrode.The sub-micron gap length is exactly the power on thickness of insulating medium layer of silicon substrate or cover plate silicon chip;
2) deposit the electric insulating medium layer and the solder layer of one deck submicron thickness on the positive and cover plate silicon chip back side respectively at silicon substrate, the insulating medium layer and the solder layer that erode resonance oscillator corresponding position respectively form curved cavity, then, silicon substrate, cover plate silicon chip being carried out the wafer level scolder with the structure silicon chip respectively aims at bonding and forms sub-micron gap between resonance oscillator and fixed electrode; Total the thickness of insulating medium layer and solder layer be exactly the size silicon substrate in sub-micron gap or cover plate silicon chip power on.
3) deposit one deck electric insulating medium layer respectively on the silicon substrate front and the cover plate silicon chip back side, the electric insulating medium layer that etches away resonance oscillator corresponding position respectively forms curved cavity.After part outside the structure silicon chip resonance oscillator structure carried out the double-sided overall attenuate, silicon substrate, cover plate silicon chip are carried out wafer level with the structure silicon chip respectively aim at bonding and form the sub-micron gap.The size in sub-micron gap is exactly that the power on thickness of insulating medium layer of silicon substrate or cover plate silicon chip deducts the difference of resonance oscillator projective structure silicon chip level.
4) deposit the electric insulating medium layer of one deck submicron thickness on the positive and cover plate silicon chip back side respectively at silicon substrate, etch away the electric insulating medium layer formation curved cavity of resonance oscillator corresponding position respectively.Positive and cover plate silicon chip back-etching goes out to be used for to apply the groove of bonding scolder at silicon substrate then, then silicon substrate, cover plate silicon chip is carried out the wafer level scolder with the structure silicon chip respectively and aims at bonding formation sub-micron gap.The bonding scolder answers complete filling solder and nothing to overflow.The size in sub-micron gap is exactly the power on thickness of insulating medium layer of silicon substrate or cover plate silicon chip.
Claims (10)
1. micromechanical resonator with sub-micron gap, it is characterized in that described resonator comprises silicon substrate, the structure silicon chip, the cover plate silicon chip, resonance oscillator, the fixedly elastic construction of oscillator, electric insulating medium layer between structure silicon chip and silicon substrate and the cover plate silicon chip, metal pad, electrode is drawn through hole, wherein:
1) resonator is by silicon substrate, structure silicon chip and three layers of sandwich structure that is bonded together and forms of cover plate silicon chip, the front of silicon substrate and structure silicon chip back, the front of structure silicon chip and cover plate silicon chip back lump together by wafer level vacuum alignment keys respectively;
2) the silicon substrate front and the cover plate silicon chip back side have curved cavity; The cavity at the cavity in silicon substrate front and the cover plate silicon chip back side is formed a vacuum tightness chamber;
3) the structure silicon chip is used for making the oscillator of resonator, and lid silicon chip and silicon substrate are used for respectively making the fixed electrode that drives and detect, and the sub-micron gap between resonator oscillator and fixed electrode is to form by the wafer level bonding technology.
4) fixedly the elastic construction of resonance oscillator is fixing and unsettled in the vacuum tightness chamber of being made up of cover plate silicon chip and silicon substrate with the resonance oscillator;
5) electrode is drawn through hole and is positioned on the resonator cover plate silicon chip.
2. resonator according to claim 1 is characterized in that:
1) described resonance oscillator is circular columns, square column, circular slab, perhaps the square plate structure;
2) elastic construction that is used for fixing the resonance oscillator is elastic plate or spring beam;
3) elastic construction that is used for fixing the resonance oscillator is positioned in the middle of the resonance oscillator, is positioned at resonance oscillator one end or is positioned at resonance oscillator two ends.
3. resonator according to claim 1 and 2 is characterized in that the both sides up and down of resonance oscillator are respectively the driving fixed electrode and detect fixed electrode.
4. resonator according to claim 1, it is the low resistance silicon chip of 0.01～1 Ω CM that silicon substrate, structure silicon chip and the cover plate silicon chip that it is characterized in that described sandwich structure consisting selected resistivity for use.
5. resonator according to claim 1 is characterized in that the sub-micron gap between the described fixed electrode-5 resonance oscillator is 0.05～2 μ m.
6. resonator according to claim 1 or 5 is characterized in that described gap length is the electric insulating medium layer thickness decision on cover plate silicon chip or the silicon substrate.
7. resonator according to claim 1 is characterized in that the electric insulating medium layer between structure silicon chip and silicon substrate, structure silicon chip and the cover plate silicon chip is silica or silicon nitride.
8. resonator according to claim 1, the scolder that it is characterized in that the bonding between structure silicon chip and silicon substrate, structure silicon chip and the cover plate silicon chip is metal, polymer or glass paste.
9. make as each described method among the claim 1-5, it is characterized in that utilizing wafer level to aim at bonding and form the sub-micron gap, when having made the resonator structure, realized the wafer level Vacuum Package to device, concrete processing step is:
1) to the structure silicon chip carry out oxidation, photoetching and graphical after, utilize deep reaction ion etching technology to make resonator oscillator the latter half structure;
2) carry out etching at the positive electric insulating medium layer that deposits one deck submicron thickness of silicon substrate, and to the electric insulating medium layer, form curved cavity;
3) the structure silicon chip that step (1) is obtained carries out the wafer level vacuum with silicon substrate that step (2) obtains and aims at bonding, forms the sub-micron gap between resonance oscillator the latter half structure and fixed electrode;
4) the structure silicon chip that obtains of oxidation step (3), and oxide layer carried out photoetching and etching, utilize deep reaction ion etching technology to produce the first half structure of resonator oscillator;
5) carry out etching at the electric insulating medium layer of cover plate silicon chip backside deposition one deck submicron thickness, and to the electric insulating medium layer, form curved cavity;
6) the structure silicon chip that step (4) is obtained carries out the wafer level vacuum with cover plate silicon chip that step (5) obtains and aims at bonding, forms the sub-micron gap between resonance oscillator the first half structure and fixed electrode; The structure silicon chip is between silicon substrate and cover plate silicon chip;
7) etch electrode in cover plate silicon chip front and draw through hole, erode the electric insulating medium layer that electrode is drawn the lead to the hole site place;
8) the positive and silicon substrate backside deposition metal level at the cover plate silicon chip, and, make metal pad with metallic layer graphic.
When having made the resonator structure, realized wafer level Vacuum Package to device.
10. method according to claim 9 is characterized in that the method for making the sub-micron gap has following four kinds:
1) deposits the electric insulating medium layer of one deck submicron thickness on the positive and cover plate silicon chip back side respectively at silicon substrate, the electric insulating medium layer that etches away resonance oscillator corresponding position respectively forms curved cavity, then silicon substrate, cover plate silicon chip is carried out wafer level with the structure silicon chip respectively and aims at sub-micron gap between bonding formation resonance oscillator and fixed electrode.The sub-micron gap length is exactly the power on thickness of insulating medium layer of silicon substrate or cover plate silicon chip;
2) deposit the electric insulating medium layer and the solder layer of one deck submicron thickness on the positive and cover plate silicon chip back side respectively at silicon substrate, the insulating medium layer and the solder layer that erode resonance oscillator corresponding position respectively form curved cavity, then, silicon substrate, cover plate silicon chip being carried out the wafer level scolder with the structure silicon chip respectively aims at bonding and forms sub-micron gap between resonance oscillator and fixed electrode; Total the thickness of insulating medium layer and solder layer be exactly the size silicon substrate in sub-micron gap or cover plate silicon chip power on.
3) deposit one deck electric insulating medium layer respectively on the silicon substrate front and the cover plate silicon chip back side, the electric insulating medium layer that etches away resonance oscillator corresponding position respectively forms curved cavity.After part outside the structure silicon chip resonance oscillator structure carried out the double-sided overall attenuate, silicon substrate, cover plate silicon chip are carried out wafer level with the structure silicon chip respectively aim at bonding and form the sub-micron gap.The size in sub-micron gap is exactly that the power on thickness of insulating medium layer of silicon substrate or cover plate silicon chip deducts the difference of resonance oscillator projective structure silicon chip level.
4) deposit the electric insulating medium layer of one deck submicron thickness on the positive and cover plate silicon chip back side respectively at silicon substrate, etch away the electric insulating medium layer formation curved cavity of resonance oscillator corresponding position respectively.Positive and cover plate silicon chip back-etching goes out to be used for to apply the groove of bonding scolder at silicon substrate then, then silicon substrate, cover plate silicon chip is carried out the wafer level scolder with the structure silicon chip respectively and aims at bonding formation sub-micron gap.The bonding scolder answers complete filling solder and nothing to overflow.The size in sub-micron gap is exactly the power on thickness of insulating medium layer of silicon substrate or cover plate silicon chip.
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