CN104058367A - Manufacturing method of MEMS device - Google Patents
Manufacturing method of MEMS device Download PDFInfo
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- CN104058367A CN104058367A CN201310095737.1A CN201310095737A CN104058367A CN 104058367 A CN104058367 A CN 104058367A CN 201310095737 A CN201310095737 A CN 201310095737A CN 104058367 A CN104058367 A CN 104058367A
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Abstract
The invention relates to a manufacturing method of an MEMS device, which comprises the following steps: providing a first semiconductor substrate; forming a pattern layer and a sacrificial layer embedded in the pattern layer on the first semiconductor substrate; bonding a second semiconductor substrate on the pattern layer and the sacrificial layer; grinding the second semiconductor substrate to reach a certain thickness; forming a suspending micro-mechanical structure by the second semiconductor substrate; forming a packaging film layer above the second semiconductor substrate, and removing the sacrificial layer to seal the micro-mechanical structure in a cavity. The manufacturing method of the MEMS device of the invention enables the MEMS structure to be smaller in size and higher in accuracy.
Description
Technical field
The present invention relates to a kind of MEMS device, relate in particular to a kind of manufacture method of MEMS device.
Background technology
MEMS (Micro-Electro-Mechanical Systems, MEMS) is that a kind of integrability is produced, and integrates microdevice or the system of micro mechanism, microsensor, miniature actuator and signal processing and control circuit.It is along with the development of semiconductor integrated circuit Micrometer-Nanometer Processing Technology and ultraprecise Machining Technology gets up.The microelectronic component that adopts MEMS technology has very wide application prospect in Aeronautics and Astronautics, environmental monitoring, biomedicine and all spectra that almost people touch.
The manufacture method of existing MEMS device is generally and on semiconductor base, forms patterned layer and sacrifice layer, then form dielectric layer thereon, make the micro mechanical structure of the suspension of MEMS device of described dielectric layer, sacrifice layer is removed, then MEMS device sealing is got up.
The schematic flow sheet of a kind of existing MEMS device manufacture method as shown in Figure 1, basic step comprises: step S101, provide Semiconductor substrate, described Semiconductor substrate is the bottom semiconductor structure of MEMS device.Step S102, form the first sacrifice layer on the surface of described Semiconductor substrate, the material of described the first sacrifice layer is amorphous carbon, according to the required bulk of housing micromechanical structure in MEMS device, selects the thickness of described the first sacrifice layer.Described in step S103, etching, the first sacrifice layer forms the first groove.Step S104, cover and form first medium layer in described the first sacrificial layer surface.First medium layer described in step S105, employing chemical mechanical milling tech attenuate, until expose described the first sacrifice layer.Step S106, at the method deposit second medium layer of described first medium layer and the first sacrificial layer surface CVD, utilize second medium layer to form the micro mechanical structure suspending, and expose the first sacrifice layer.Step S107, removal the first sacrifice layer, and micro mechanical structure is sealed.
But the rete that existing MEMS device manufacture method often adopts the method for CVD to form the micro mechanical structure of making suspension is second medium layer, what therefore the thickness of this layer of dielectric layer was difficult to do is very thin, therefore the preparation method accuracy of existing MEMS device is lower, and the thickness of MEMS device is difficult to reduce, accuracy is difficult to improve.
Summary of the invention
The technical problem that the present invention solves is the lower problem of manufacture method accuracy of existing MEMS device.
In order to address the above problem, the invention provides a kind of manufacture method of MEMS device, comprise step: provide the first semiconductor base; On the first semiconductor base, form patterned layer and be embedded in the sacrifice layer in patterned layer; Bonding the second semiconductor base on patterned layer and sacrifice layer; Grind the second semiconductor base to certain thickness; Utilize the second semiconductor base to form the micro mechanical structure suspending; Above the second semiconductor base, form encapsulation rete, remove sacrifice layer, described micro mechanical structure is enclosed in cavity.
Optionally, described certain thickness is 10-50 μ.
Optionally, the material of described the second semiconductor base is monocrystalline silicon.
Optionally, described the second semiconductor base is monocrystalline silicon wafer crystal.
Optionally, described bonding is low-temperature bonding or high temperature bonding.
Optionally, the material of described sacrifice layer is agraphitic carbon.
Optionally, the material of described patterned layer is: silica.
Optionally, in described the first semiconductor base, be formed with MOS circuit.
Optionally, before described removal sacrifice layer, also comprise: etching the second semiconductor base forms the opening that exposes sacrifice layer; Described removal sacrifice layer is for utilizing described opening to remove sacrifice layer; After removing sacrifice layer, also comprise the step of described closure of openings.
Optionally, form sacrifice layer forming above being also included in the second semiconductor base after micro mechanical structure, the step of described removal sacrifice layer comprises to be removed below the second semiconductor base and the sacrifice layer of top together.
Compared with prior art, the present invention has the following advantages:
The manufacture method of MEMS device of the present invention has adopted the method for bonding on the first semiconductor base, to form the second semiconductor base of making the micro mechanical structure suspending, having abandoned conventional art adopts the method for CVD to form, thereby improve the problem of the bad control of thicknesses of layers of the micro mechanical structure of traditional formation making suspension, make the volume of MEMS structure less, accuracy is higher.
Brief description of the drawings
By describing in more detail example embodiment with reference to accompanying drawing, it is more obvious that above and other feature and advantage will become for those skilled in the art, in accompanying drawing:
Fig. 1 is the manufacture method flow chart of existing MEMS device;
Fig. 2 is the manufacture method flow chart of MEMS device of the present invention;
Fig. 3 to Fig. 6 is the structural representation of the manufacture method of the MEMS device of one embodiment of the invention.
Detailed description of the invention
For above-mentioned purpose of the present invention, feature and advantage can more be become apparent, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Set forth detail in the following description so that fully understand the present invention.But the present invention can be different from alternate manner described here and implements with multiple, and those skilled in the art can do similar popularization without prejudice to intension of the present invention in the situation that.Therefore the present invention is not subject to the restriction of following public detailed description of the invention.
Fig. 2 is the manufacture method flow chart of MEMS device of the present invention; Fig. 3 to Fig. 9 is the structural representation of the manufacture method of the MEMS device of one embodiment of the invention.Below in conjunction with Fig. 2 to Fig. 9, the manufacture method of MEMS device of the present invention is elaborated.
As shown in Figure 2, the manufacture method of MEMS device of the present invention comprises step:
S210: the first semiconductor base is provided.
As shown in Figure 3, described the first semiconductor base 30 comprises monocrystalline silicon wafer crystal 31 in the present embodiment, and the silica epitaxial layer 32 forming on wafer 31 is formed with MOS circuit 33, for example drive circuit or control circuit in silica epitaxial layer 32.In silica epitaxial layer 32, be also formed with metal interconnecting layer 34 and lower electrode plate 35.Described metal interconnecting layer 34 is for being electrically connected with the micro mechanical structure (cantilever) of MEMS device described in the present embodiment; Described lower electrode plate 35, as driving layer, is positioned at the surf zone of the first semiconductor base 30.
S220: form patterned layer and be embedded in the sacrifice layer in patterned layer on the first semiconductor base.
Concrete, as shown in Figure 3, forming sacrifice layer 36 on the first semiconductor base 30 surfaces, described sacrifice layer 36 is used to form the lower space of the micro mechanical structure of suspension, and its thickness is not less than the reclinate stroke of cantilever of the micro mechanical structure of suspension.In the present embodiment, the material of described sacrifice layer 36 is amorphous carbon, adopts chemical vapour deposition (CVD) to form.
Then, sacrifice layer 36 described in etching, forms groove.Described etching can be plasma etching, although amorphous carbon is difficult to and other materials produce chemical reactions, because character is loosened, the dry etch process that is therefore easier to be had by plasma etching etc. physical bombardment effect is removed.Concrete, adopt photoetching process to form photoresist mask on sacrifice layer 36 surfaces, and taking the first semiconductor base 30 as sacrifice layer 36 described in etching stop layer etching, form required groove.Described bottom portion of groove exposes the first semiconductor base 30, and aims at metal interconnecting layer 34, so that make the contact hole being connected with metal interconnecting layer 34 in groove.
Sacrifice layer 36 is divided into independently square region by described groove, and in described square region, described in the bottom alignment of sacrifice layer 36 lower electrode plate 35.As shown in Figure 3, form first medium layer 37 on the surface of above-mentioned the first semiconductor base 30 and sacrifice layer 36, described first medium layer 37 is filled in groove, is also covered in the first sacrifice layer 36 surfaces.The material of described first medium layer 37 can be the conventional semiconductor medium material such as silica or silicon nitride, adopts chemical vapor deposition method to form.Then, adopt cmp, first medium layer 37 is until expose the surface of sacrifice layer described in attenuate.Because amorphous carbon is difficult to react with polishing fluid, therefore polishing velocity is extremely slow, and above-mentioned chemical mechanical milling tech is easy to stagnate in sacrifice layer 36 surfaces.After the first medium layer 37 on sacrifice layer 36 surfaces has been polished, described first medium layer 37 only retains the part in former groove, and the top surface of first medium layer is mutually concordant with sacrifice layer.Described first medium layer 37 is patterned layer, and material can be the silicon compounds such as silica.
As shown in Figure 3, at the interior making contact hole 38 of described first medium layer 37, described contact hole 38 is connected with the metal interconnecting layer 34 in the first semiconductor base 30.
S230: bonding the second semiconductor base on patterned layer and sacrifice layer; Grind the second semiconductor base to certain thickness; The material of described the second semiconductor base is monocrystalline silicon.
As shown in Figure 4, be monocrystalline silicon wafer crystal in the present embodiment, described bonding is low-temperature bonding or high temperature bonding.For example, in the step of the first semiconductor base 30 and the second semiconductor base 40 described in bonding, under pressure the first semiconductor base 30 and the second semiconductor base 40 are close to, and described the first semiconductor base 30 and described the second semiconductor base 40 are heated to 100 DEG C-450 DEG C, the pressure that the chemical bond of wafer bonding produces can make the patterned layer 37 and the second semiconductor base 40 that do not need external pressure to get final product in the first semiconductor base 30 contact with each other.Between the patterned layer 37 of the first semiconductor base 30 of bonding and the wafer of the second semiconductor base 40, form strong chemical bond and bonding.In order to shorten the bonding time that forms chemical bond, after room-temperature bonding, carry out process annealing processing.Along with the rising of temperature, annealing time shortens.For example we can anneal 5 hours at 100 DEG C, can at 150 DEG C, anneal 1 hour, can at 250 DEG C, anneal 20 minutes, can also at 450 DEG C, anneal 1 minute.
By bonding, the first semiconductor base 30 and the second semiconductor base 40 bonded interface places have formed seamless bonding, thereby have improved greatly bond strength.
At key and afterwards, grind the second semiconductor base 40 to certain thickness; Described certain thickness is the thickness that is applicable to making the micro mechanical structure suspending, and because the less sensitivity of weight of the micro mechanical structure suspending is higher, therefore the sensitivity of the less MEMS forming of described certain thickness is higher.The described cmp that is ground to, for example, can adopt the method for traditional polishing semiconductor wafers to grind.
In conventional method, normally on the first semiconductor base 30, form the rete of making the micro mechanical structure suspending, for example, adopt the method for chemical vapor deposition (CVD).But the reliability of the rete forming like this one side and the first semiconductor base 30 surface conjunctions is poor; On the other hand, what be difficult to form is very thin, and the dielectric layer of formation is by grinding conventionally also more than 50 microns, and the thickness of the micro mechanical structure of the suspension of formation is also thicker like this, and weight is also larger, is unfavorable for improving the sensitiveness of MEMS structure; And because CVD can not form mono-crystalline structures, so the stability of the micro mechanical structure of the suspension that this rete forms is not high, in the step of grinding attenuate, be also easy to depart from the first semiconductor base.
The second semiconductor base 40 that has adopted in the present invention the method for bonding to form, the better reliability of therefore with the first semiconductor base 30 combinations, because being adopts the ready-made structure of bonding, and wafer can be ground to very thin thickness, therefore the thickness of the second semiconductor base 40 can be at 10-50 μ m; And can adopt the wafer of monocrystalline, the stability of the micro mechanical structure of the suspension of making is like this higher.
S240: utilize the second semiconductor base to form the micro mechanical structure suspending.
As shown in Figure 5, the step that this step is well known to those skilled in the art, for example, adopt the method for photoetching to form desired structure, and for example cantilever 50, therefore repeats no more.
S250: form encapsulation rete above the second semiconductor base, remove sacrifice layer, described micro mechanical structure is enclosed in cavity.
Specifically in the present embodiment can form the opening that exposes sacrifice layer by first etching the second semiconductor base, as shown in Figure 5, can adopt the method for photoetching in the second semiconductor base 40, to form opening or through hole 51, thereby expose the sacrifice layer 36 of its bottom.Then, form another sacrifice layer 52 above the second semiconductor base, this sacrifice layer can form with identical method and material with the sacrifice layer of the second semiconductor base below, repeats no more.On another sacrifice layer 52, form encapsulation rete 53, for example can adopt the method for CVD to form silicon dioxide layer or other silicon compound layers, in encapsulation rete, form opening, then utilize the opening in opening and the second semiconductor base that encapsulates rete to remove sacrifice layer, concrete, with reference to figure 6, in the present embodiment, can in through hole, pass into oxygen, and carry out cineration technics and remove sacrifice layer, the temperature range of described cineration technics is 350 ° of C～450 ° C.Amorphous carbon can be oxidized to carbon dioxide or CO gas under said temperature, and discharge by through hole, above-mentioned sacrifice layer will be removed up hill and dale, and the remainder of device can't be affected, and has just formed the He Shang space, lower space of micro mechanical structure layer (being cantilever).Now described cantilever only has one end to be fixed, and the other end is suspended in above-mentioned space, can carry out flexure operation up or down.
Then, by described closure of openings, can adopt chemical vapor deposition method, form on the surface of encapsulation rete the cover layer that covers described opening.After above-mentioned opening is blocked, just described micro mechanical structure is enclosed in a closed cavity.
Also can adopt in addition the method for bonding above the second semiconductor base, to form encapsulation rete.
Although the present invention discloses as above with preferred embodiment, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (10)
1. a manufacture method for MEMS device, is characterized in that,
Comprise step:
The first semiconductor base is provided;
On the first semiconductor base, form patterned layer and be embedded in the sacrifice layer in patterned layer;
Bonding the second semiconductor base on patterned layer and sacrifice layer;
Grind the second semiconductor base to certain thickness;
Utilize the second semiconductor base to form the micro mechanical structure suspending;
Above the second semiconductor base, form encapsulation rete, remove sacrifice layer, described micro mechanical structure is enclosed in cavity.
2. the manufacture method of MEMS device as claimed in claim 1, is characterized in that, described certain thickness is 10-50 μ m.
3. the manufacture method of MEMS device as claimed in claim 1, is characterized in that, the material of described sacrifice layer is agraphitic carbon.
4. the manufacture method of MEMS device as claimed in claim 1, is characterized in that, the material of described the second semiconductor base is monocrystalline silicon.
5. the manufacture method of MEMS device as claimed in claim 1, is characterized in that, described the second semiconductor base is monocrystalline silicon wafer crystal.
6. the manufacture method of MEMS device as claimed in claim 1, is characterized in that, described bonding is low-temperature bonding or high temperature bonding.
7. the manufacture method of MEMS device as claimed in claim 1, is characterized in that, the material of described patterned layer is: silica.
8. the manufacture method of MEMS device as claimed in claim 1, is characterized in that, in described the first semiconductor base, is formed with MOS circuit.
9. the manufacture method of MEMS device as claimed in claim 1, is characterized in that, before described removal sacrifice layer, also comprises: etching the second semiconductor base forms the opening that exposes sacrifice layer; Described removal sacrifice layer is for utilizing described opening to remove sacrifice layer; After removing sacrifice layer, also comprise the step of described closure of openings.
10. the manufacture method of MEMS device as claimed in claim 1, it is characterized in that, also be included in the second semiconductor base after forming micro mechanical structure above, form sacrifice layer, the step of described removal sacrifice layer comprises the sacrifice layer of removing together the second semiconductor base below and top.
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| CN201310095737.1A CN104058367A (en) | 2013-03-22 | 2013-03-22 | Manufacturing method of MEMS device |
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Cited By (4)
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| CN106865489A (en) * | 2017-02-14 | 2017-06-20 | 上海华虹宏力半导体制造有限公司 | The manufacture method of MEMS |
| CN107525611A (en) * | 2016-06-20 | 2017-12-29 | 上海丽恒光微电子科技有限公司 | pressure sensor and preparation method thereof |
| CN109734047A (en) * | 2019-02-27 | 2019-05-10 | 京东方科技集团股份有限公司 | A kind of MEMS device and preparation method thereof, display base plate |
| CN115448249A (en) * | 2022-09-28 | 2022-12-09 | 上海积塔半导体有限公司 | Device manufacturing method, electronic device and micro-electro-mechanical system |
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Application publication date: 20140924 |