CN101867080A - Bulk silicon micro mechanic resonator and manufacturing method thereof - Google Patents
Bulk silicon micro mechanic resonator and manufacturing method thereof Download PDFInfo
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- CN101867080A CN101867080A CN201010181105A CN201010181105A CN101867080A CN 101867080 A CN101867080 A CN 101867080A CN 201010181105 A CN201010181105 A CN 201010181105A CN 201010181105 A CN201010181105 A CN 201010181105A CN 101867080 A CN101867080 A CN 101867080A
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Abstract
The invention relates to a bulk silicon micro mechanic resonator and a manufacturing method thereof. The invention is characterized in that: the resonator is formed by bonding a substrate silicon chip, a structural silicon chip and a cover plate silicon chip, the front side of the substrate silicon chip bonded together with the back side of the structural silicon chip, and the front side of the structural silicon chip is bonded with the back side of the cover plate silicon chip; when the resonator is manufactured, a suspended structure, namely a cavity under a resonant vibration generator, is manufactured first, then an element structural layer is formed above the cavity by bonding, next the element structure of the resonator is released during the manufacturing of the element structure of the resonator by a dry-method erosion, and finally the cover plate silicon chip is fixed above the structural silicon chip by using a vacuum wafer for alignment and bonding. Before the element structure is manufactured, the cavity under the resonator is corroded by a wet method and the wafer package is used for the vacuum sealing of the element.
Description
Technical field
The invention provides a kind of bulk silicon micro mechanic resonator and manufacture method, relate to the body resonistor that technology such as a kind of MEMS of utilization is made or rather, belong to bulk silicon micro mechanic resonator processing and Micrometer-Nanometer Processing Technology field.
Background technology
Clock chip has important effect as the time reference source in the Circuits System in Circuits System.Traditional clock chip generally adopts quartz crystal oscillator to produce signal waveform as resonator.But quartz crystal oscillator generally is to adopt cutting technique to make, and makes its volume be difficult to reduce, thereby has hindered the microminiaturization of Circuits System, in addition quartz crystal oscillator also can't with the integrated making of Circuits System, improved cost of manufacture.In recent years, because the development of micro-processing technology, the MEMS micromechanical resonator obtains very big development.The MEMS resonator has that size is little, power consumption is little, cost is low, with CMOS IC (Complementary Metal OxideSemiconductor Integrated Circuit, complementary mos integrated circuit) technology advantage such as compatibility mutually, demand in fields such as wireless telecommunications grows with each passing day, and will become the substitute of crystal resonator.And in micromechanical resonator, body silicon is learned wave resonator at the top of one's voice and is had very high Q value, and higher resonance frequency can be provided.
The vertical acoustic wave micromechanical resonator of body silicon is the resonance that utilizes the compressional wave resonance mode characteristic realization device of body silicon resonance oscillator structure.Three kinds of basic mode of resonator oscillator work are: mode of flexural vibration, distortion mode and phantom attitude.Phantom attitude resonator oscillator can be square plate, Circular Plate or circular slab structure.Fig. 1-1 (a) is the basic mode schematic diagrames of three kinds of resonator works, Fig. 1-1 (b) is phantom attitude resonator resonance oscillator different mode of resonance schematic diagram (Chandorkar when being respectively square plate, Circular Plate and circular slab, S.A., M.Agarwal, et al. (2008). " Limits of quality factor in bulk-modemicromechanical resonators. "
Mems 2008:21st Ieee International Conference on Micro Electro Mechanical Systems, Technical Digest: 74-77).Fig. 1-2 is the fundamental diagram of square plate bulk silicon micro mechanic resonator.Its oscillator is a square thin plate, is respectively drive electrode and detecting electrode around the oscillator, and when adding the alternating voltage of out of phase like this between drive electrode and oscillator, the electrostatic force that is produced by voltage will encourage oscillator to enter the mode of resonance of appointment.By detecting the variation of output electrode end output current, just resonator signal can be exported then.
Traditional bulk silicon micro mechanic resonator is to use SOI (Silicon-On-Insulator, the silicon on the dielectric substrate) silicon wafer to manufacture, and resonator is made up of structure sheaf, buried regions silica and substrate silicon.Structure sheaf includes resonator oscillator, electrode, oblique straining beam, metal pad four parts.Silicon substrate under resonator oscillator part can get rid of fully (Khine, L.and M.Palaniapan (2009). " High-Qbulk-mode SOI square resonators with straight-beam anchors. "
Journal of Micromechanics and Microengineering), also can not get rid of (Mattila, T., J.Kiihamaki, et al. (2002). " A 12 MHz micromechanical bulk acoustic modeoscillator. "
Sensors and Actuators a-Physical101 (1-2): 1-9).
The manufacture method of conventional bulk silicon micro mechanic resonator mainly contains following two kinds:
Method 1): at first on soi wafer, make metal pad.Use DRIE (Deep-Reactive-Ion-Etch, deep reaction ion etching) technology to etch the device architecture of resonator then.Do protective layer by spin coating PI (Polyimide, polyimides) again, resonator structure is protected, and by the silicon etching process silicon of resonator structure layer below is removed from the soi wafer substrate back.At last the buried silicon oxide layer of SOI substrate is removed, thereby resonator structure is discharged (Lee, J.E.Y., J.Yan, etal. (2009). " Low loss HF band SOI wine glass bulk mode capacitive square-plateresonator. "
Journal of Micromechanics and Microengineering19 (7)).
Method 2): at first on soi wafer, do metal pad.Use the DRIE processes to go out the device architecture of resonator then.Utilize wet etching that the buried silicon oxide layer of soi wafer is removed at last, thereby resonator structure is discharged (Shao, L.and M.Palaniapan (2008). " Effect of etch holes onquality factor of bulk-mode micromechanical resonators. "
Electronics Letters44 (15): 938-940).
There is following problem in these methods of utilizing SOI MEMS technology to make resonator:
The first, more than the manufacture method of two kinds of traditional micromechanical resonators all be at the structure sheaf back releasing structure layer that completes, complex process, cost height;
The second, method 1) to do protective layer with polyimides, increased the difficulty and the complexity of technology;
The 3rd, method 1) device of making is worn because silicon substrate carves fully, therefore is difficult for carrying out the wafer level Vacuum Package.
The 4th, method 2) when using the buried silicon oxide layer releasing structure of wet etching soi wafer substrate, there is the easy and glutinous problem of release fully that even is difficult for of substrate of structure sheaf.
Summary of the invention
The big and complicated high shortcoming of problem, particularly processing technology difficulty at existing in the general body resonistor processing the present invention proposes a kind of bulk silicon micro mechanic resonator manufacture method.
The structural representation of the body resonistor that the present invention proposes as Figure 1-3, the structure of entire device is made up of seven parts, wherein: 1) have the low resistivity substrate silicon chip of cavity, cavity be in unsettled resonance oscillator under; 2) has the low-resistance structure silicon chip of body resonistor oscillator, drive electrode and detector electrode structure; 3) be in electricity isolated layer between silicon substrate and the structure silicon chip; 4) with the cover plate silicon chip on the contacted metal pad of soldered ball; What 5) be used for fixing unsettled resonator oscillator tiltedly draws brace summer, and brace summer can be the oblique straining beam of T type, can be the vertical pulling beam also, sees Fig. 1-4; 6) contain the cover plate silicon chip of curved cavity, it is in directly over the structure silicon chip; 7) be positioned at the patterned solder layer of one deck at the cover plate silicon chip back side.
The body resonistor that the present invention proposes is bonded together for three layers by silicon substrate, structure silicon chip and cover plate silicon chip and forms, the front of silicon substrate and structure silicon chip back, the front of structure silicon chip and cover plate silicon chip back stick together by bonding respectively.The structure silicon chip is between silicon substrate and cover plate silicon chip, and silicon substrate front cavity and cover plate silicon chip back side cavity are formed a vacuum chamber, and the resonator oscillator is arranged in this vacuum chamber.The cover plate silicon chip back side has curved cavity and the coating binder groove that is used to form vacuum chamber, and cavity is in directly over the resonator, and the binder groove is distributed in one week of the outside of cover plate silicon chip cavity.
In addition, in order to strengthen the intensity of drive signal and detection signal, improve resonator behavior, also two square plate resonance oscillators that are operated in identical mode can be of coupled connections by a beam, its structural representation and fundamental diagram are seen Fig. 1-5.
(1) on silicon substrate, produce cavity by the anisotropic wet corrosion or the dry etch process of oxidation, photoetching and silicon, then by oxidation technology, growth layer of silicon dioxide layer on silicon substrate;
(2) by bonding technology, silicon substrate that step (1) is obtained and structure wafer bonding are together;
(3) utilize reduction process, the reduced thickness that step (2) is obtained the structure silicon chip on the bonding silicon chip is to the required thickness of resonator structure;
(4) the backside deposition metal level of the silicon substrate that obtains in step (3);
(5) at the front depositing metal layers of the structure silicon chip of step (4), and by the metallic layer graphic of technologies such as photoetching, corrosion with structure silicon chip front, form with the cover plate silicon chip on the contacted metal pad of soldered ball;
(6) by photoetching and deep reaction ion etching technology, the structure silicon chip front that step (5) is made processes needed resonator structure;
(7) on the cover plate silicon chip, produce curved cavity by methods such as oxidation, gluing photoetching, silica erosion, silicon corrosion, after its thermal oxidation, deposit pad, lead, soldered ball that is used to electrically contact and the binder that is used for Vacuum Package thereon;
(8) the cover plate silicon chip is aimed at bonding by the vacuum disk and be fixed on the structure silicon chip that step (6) obtains, resonator is carried out the wafer level Vacuum Package;
(9) adopt scribing machine that the described bonding disk of step (8) is carried out a scribing on the direction, the scribe line on the body resonistor chip cover plate pad is scratched by the method for scribing;
(10) adopt scribing machine that bonding disk described in the step (9) is carried out scribing on transverse axis and the y direction, the body resonistor unit on the disk is separated;
(11) the single body resonistor chip that obtains after the scribing is fixed on the substrate, and is electrically connected with substrate by the method for routing.
Bulk silicon micro mechanic resonator provided by the present invention comprises silicon substrate, the structure silicon chip, and the cover plate silicon chip, the electric insulation layer between silicon substrate and the structure silicon chip, the resonance oscillator, pad, seven part-structures such as binder is characterized in that:
1) resonator is bonded together for three layers by silicon substrate, structure silicon chip and cover plate silicon chip and forms, the front of silicon substrate and structure silicon chip back, and the front of structure silicon chip and cover plate silicon chip back stick together by bonding respectively;
2) silicon substrate has the curved cavity from front etch;
3) resonator oscillator, drive electrode and detector electrode structure are positioned on the structure silicon chip;
4) silicon substrate front cavity and cover plate silicon chip back side cavity are formed a vacuum chamber, and the resonator oscillator is arranged in this vacuum chamber;
5) the structure silicon chip is positioned at the top of silicon substrate, and the resonance oscillator is unsettled directly over the substrate cavity;
Described resonator cover plate comprises:
1) the cover plate silicon chip back side has curved cavity and the coating binder groove that is used to form vacuum chamber, and cavity is in directly over the resonator, applies one week of the outside that the binder groove is distributed in cover plate silicon chip cavity;
2) two sides of cover plate silicon chip all has the electric insulating medium layer;
3) back side of cover plate has the patterned metal level that one deck is realized and the external world is electrically connected, and layer metal deposition is on electric insulation layer;
4) on the metal level of cover plate silicon chip the metal soldered ball is arranged, soldered ball be positioned at structure silicon chip pad directly over the position, when cover plate silicon chip and structure wafer bonding, the soldered ball on the cover plate closely contacts with pad on the structure silicon chip, thereby realizes electrically contacting;
5) back side of cover plate has the patterned binder of a circle, and binder is in the cover plate silicon chip binder groove, and it is positioned on the metal level, and width is less than recess width;
Described resonator oscillator structure is square plate, circular slab, Circular Plate, can be cantilever beam structure also, and be not limited thereto;
The beam of described resonator oscillator structure is the oblique straining beam of T type, can be the vertical pulling beam also, and be not limited thereto; Two and two above resonator oscillators are coupled together by beam, and these two or more resonator oscillators and beam integral body are as a resonator oscillator;
Body resonistor manufacture method of the present invention is characterised in that:
1. the cavity on the silicon substrate just completed before the resonator structure layer completes;
2. the release of the making resonator device architecture of resonator structure is finished simultaneously;
3. can adopt the method for wet etching or dry etching to make substrate cavity and cover plate curved cavity, and be not limited thereto;
4. with the structure wafer thinning to the required thickness of resonator structure, can adopt the method for chemical machinery, perhaps use wet etching to carry out attenuate, and be not limited thereto;
5. at structure silicon chip front depositing metal layers, by the contacted metal pad of soldered ball on making of technologies such as photoetching, corrosion and the cover plate silicon chip;
6. at silicon substrate backside deposition metal level, realize that the electricity of device substrate ground connection connects;
7. the cover plate silicon chip can utilize plain conductor implementation structure silicon chip and extraneous being electrically connected, and also can utilize the low-resistance on state characteristic implementation structure silicon chip of heavily doped region and extraneous being electrically connected, and be not limited thereto;
8. comprise the disk of resonator structure and cover plate disk and carry out the enclosed package of wafer level by binder, being used for the structure disk, aim at the binder of bonding with cover plate disk cryogenic vacuum can be glass paste, can be polymer or metal also, and be not limited thereto;
9. after by the method for scribing the scribe line on the cover plate pad being scratched, by the method for scribing the resonator element on the disk is separated, scribing this moment should be carried out on X direction and y direction respectively again, and scribing thickness is the thickness of bonding pad;
10. the single resonator chip that obtains after the scribing directly is fixed on the substrate, and the method by routing is electrically connected with substrate, and wherein this substrate can be printed circuit board (PCB), ceramic substrate or encapsulation shell.
This shows, compare with the structure of general bulk silicon micro mechanic resonator:
The bulk silicon micro mechanic resonator structure that the present invention proposes can the control structure silicon chip and silicon substrate between thickness of oxide layer; The bulk silicon micro mechanic resonator structure that the present invention proposes can be controlled the degree of depth of the cavity on the silicon substrate; Electric insulation layer is between silicon substrate and the structure silicon chip.
Compare with general bulk silicon micro mechanic resonator manufacture method:
The present invention at first makes on silicon substrate and is used for the curved cavity that structure discharges, and just device architecture has been discharged when device architecture completes, need not follow-up release process, has reduced process complexity;
The present invention has adopted the technologies such as anisotropic wet corrosion of the common silicon chip of low-resistance and Si-Si direct bonding, silicon, reduces the cost of manufacture of device;
The present invention is bonded in structure sheaf on the silicon substrate that erodes away cavity in advance, utilizes the dry etching releasing structure then, does not use PI to do protective layer, has therefore reduced the complexity of technology;
The present invention uses the curved cavity on the wet etching making silicon substrate, can control the cavity degree of depth, and cost is low;
The present invention is unsettled on the cavity of silicon substrate with structure sheaf, utilizes the dry etching releasing structure, does not have the glutinous problem that connects between structure sheaf and the substrate;
The present invention aims at bonding with cover plate by the vacuum disk and is fixed on structure silicon chip chip top, the cavity of silicon substrate and the cavity on the cover plate are formed a vacuum chamber, the resonance oscillator then just in time is positioned among this vacuum chamber, thereby realize the wafer level Vacuum Package of bulk silicon micro mechanic resonator, so not only improve device performance, and be applicable to batch process.
Because the processing method that the present invention proposes has just discharged device architecture when the resonator structure fabrication is finished, need not follow-up release process, has reduced process complexity; Bonding by common silicon chip is made device, has reduced cost; Use the curved cavity on the wet etching making silicon substrate, reduced cost, and, can improve the performance of device by controlling the degree of depth of cavity; Do not use PI to do protective layer, reduced the complexity of processing; Adopt the dry etching releasing structure, do not have the glutinous problem that connects of structure sheaf and substrate; Carry out the wafer level Vacuum Package easily, improved device performance, be applicable in batches to become to produce.
In sum, the present invention relates to a kind of bulk silicon micro mechanic resonator and manufacture method, it is characterized in that earlier with suspension structure--the cavity under the resonator oscillator is made, method by bonding is produced on the cavity top with the device architecture layer again, then by being dry-etched in when making the resonator structure, the resonator structure is discharged, and the method for utilizing the vacuum disk to aim at bonding at last is fixed on structure silicon chip top with the cover plate silicon chip.Because the cavity of resonator below was made with wet etching before device architecture is made, and adopted wafer level packaging that device is carried out vacuum seal, thereby the cost of the resonator of making can be reduced greatly.Specifically, the making of bulk silicon micro mechanic resonator provided by the invention may further comprise the steps: 1) adopt silicon anisotropic etching to go out curved cavity at heavily doped silicon substrate front etch; 2) utilize Si-Si direct bonding technology that silicon substrate and heavily doped structure wafer bonding are in the same place.3) method by attenuate, with the reduced thickness of structure silicon chip to the required thickness of resonator structure; 4) on the structure silicon chip front and the silicon substrate back side, produce metal pad by the method for metal coating; 5) utilize deep etching technology,, discharge resonator structure from front etching structure layer; 6) by the vacuum disk aim at bonding with the structure sheaf vacuum seal of resonator among cover plate silicon chip and silicon substrate, realize the Vacuum Package of the wafer level of resonator.7) the single body resonistor chip that obtains after the scribing is fixed on the substrate, and is electrically connected with substrate by routing method.The present invention, not only can reduce production costs owing to simplified processing technology and adopted wafer-grade vacuum encapsulation process applicable to batch process, can also improve rate of finished products, can realize the making of a kind of low cost, high performance body resonistor
Description of drawings
Fig. 1-1 (a) is the basic mode schematic diagrames of three kinds of resonator works: i) mode of flexural vibration, ii) twist mode and iii) phantom attitude; Fig. 1-1 (b) is phantom attitude resonator resonance oscillator branch different mode of resonance deformation schematic diagrames when being square plate, Circular Plate and circular slab: A) original structure figure, B) Wine-Glass mode, C) Extensional mode and D) Lame mode.
Fig. 1-2 is that bulk silicon micro mechanic resonator its working principles figure: Fig. 1-2 (a) is the resonator basic functional principle schematic diagram of Wine-Glass mode; Fig. 1-2 (b) is the resonator basic functional principle schematic diagram of Extensional mode.
Fig. 1-3 (a) is the cross-sectional view of bulk silicon micro mechanic resonator; Fig. 1-3 (b) is the plan structure figure by A-B cross section, Fig. 1-3 (a) middle section.
It is T type beam (T-shape anchor) structure that Fig. 1-the 4th, oblique straining beam are respectively the basic structure schematic diagram (vertical view) of the bulk silicon micro mechanic resonator of T type beam and vertical pulling beam: Fig. 1-4 (a); Fig. 1-4 (b) is vertical pulling beam (Direct anchor) structure.
Fig. 1-the 5th, with the resonance oscillator of two bulk silicon micro mechanic resonators by be of coupled connections together basic structure schematic diagram of beam.The structural representation that two resonance oscillators of Fig. 1-5 (a) link together; Fig. 1-5 (b) is the basic functional principle schematic diagram of the device of this kind structure.
Fig. 2 is the concrete technological process of embodiment 1.
Fig. 2-1: silicon substrate with curved cavity.
Fig. 2-2: oxidation back substrate silicon chip and structure silicon chip are carried out bonding, and attenuate structure silicon chip.
Fig. 2-3: behind the plated metal, make metal pad.
Fig. 2-4: discharge resonator structure.
Fig. 2-5: have the cavity of forming vacuum chamber and the cover plate silicon chip that applies the groove structure of binder.
Fig. 2-6: depositing metal layers on the cover plate silicon chip after the oxidation, and make metal pad and soldered ball.
Fig. 2-7: on the cover plate silicon chip, apply binder.
Fig. 2-8: bonding disk and cover plate silicon chip are aimed at bonding.
Fig. 2-9: the resulting devices structure that specific embodiment 1 obtains.
Fig. 2-10: routing, be fixed on the resonator chip on the substrate.
Fig. 3 is the part technological process of the step 8-14 of embodiment 2.
Fig. 3-1: the cover plate silicon chip with cavity and groove structure is carried out ion inject.
Fig. 3-2: behind depositing metal layers on the cover plate silicon chip, make metal pad and soldered ball.
Fig. 3-3: on the cover plate silicon chip, apply binder.
Fig. 3-4: bonding disk and cover plate silicon chip are aimed at bonding.
Fig. 3-5: the resulting devices structure that specific embodiment 2 obtains.
Fig. 3-6: routing, be fixed on the resonator chip on the substrate.
The implication of each digitized representation is among the figure:
1 heavily doped silicon substrate; Cavity on 2 silicon substrates; Electricity isolated layer on 3 silicon substrates; 4 heavily doped structure silicon chips; 5 resonator oscillators; 6 with the cover plate silicon chip on the contacted metal pad of soldered ball; 7 cover plate silicon chips; Cavity on the 8 cover plate silicon chips; Electricity isolated layer on the 9 cover plate silicon chips; Pad on the 10 cover plate silicon chips; 11 binders; 12 soldered balls; 14 apply the binder groove; 15P type heavily doped region; Metal level on 16 silicon substrates; 17 electrodes; 21 pedestals or shell; 22 metal lead wires; Pin on 23 pedestals or the shell
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail.
On resonator structure disk and cover plate disk, all deposited one deck TiW/Au metal level, the metal level on structure disk and the cover plate disk has been carried out graphically by photoetching and corroding method.At the method coating last layer binder (binder can be glass paste, polymer or metal) of cover plate silicon chip back by silk screen printing, and binder is graphical, and binder is as solder layer.Resonator is realized being electrically connected by metal level and external circuitry.The electrical resistivity range of silicon substrate and structure silicon chip is 0.01-0.3 Ω cm, and the resistivity of cover plate silicon chip does not require, and is common silicon chip.The main technique step comprises:
(1) on the heavily doped monocrystalline silicon piece of polishing, make the bottom cavity that discharges in order to resonator structure by the anisotropic wet etching process of oxidation, photoetching, silicon, this moment, silicon substrate was not worn (Fig. 2-1) by corruption;
(2) make electricity isolated layer by growth layer of silicon dioxide on the silicon chip of thermal oxidation in step (1);
(3) use bonding technology, with the silicon chip of step (2) and a slice heavy doping monocrystalline silicon piece Direct Bonding in addition together, and by reduction process with the wafer thinning of cavity top to the required thickness of resonator structure (Fig. 2-2);
(4) at the backside deposition metal level of the bonding disk of step (3);
(5) at the front depositing metal layers of the bonding disk of step (4), and it is graphical by technologies such as photoetching, corrosion of metals, the structure silicon chip positive make with the cover plate silicon chip on the contacted metal pad of soldered ball (Fig. 2-3);
(6) the upper strata silicon chip of the bonding disk of step (5) being made by technologies such as photoetching, DRIE carries out structure and discharges, and forms the structure (Fig. 2-4) of resonator;
(7) on the 3rd low-doped cover plate silicon chip, produce the curved cavity of forming vacuum chamber and the groove structure (Fig. 2-5) that applies binder by methods such as oxidation, gluing photoetching, silica erosion, silicon corrosion;
(8) silicon chip in the step (7) is carried out thermal oxidation after, as the metal level on the cover plate silicon chip disk, and the TiW/Au metal level is carried out graphical treatment at its backside deposition one deck TiW/Au by the method for gluing photoetching and chemical corrosion.Metal level after graphically good is as lead that is electrically connected with the external world on the cover plate disk and pad.Then by methods such as gluing photoetching, the plating soldered ball (Fig. 2-6) that the pad realization electrically contacts on making and structure silicon chip on the metal level;
(9) silicon chip back in step (8) applies the patterned binder of last layer by the method for silk screen printing, as the solder layer on the cover plate, then binder is carried out sintering processes (Fig. 2-7);
(10) bonding disk that comprises the resonator structure unit in the step (6) and cover plate silicon chip in the step (8) are carried out low-temperature round slice under vacuum and aim at bonding, the bonding temperature scope is 300～500 ℃ (Fig. 2-8);
(11) the bonding disk in the step (10) is carried out scribing by scribing machine at resonator chip cover plate scribe line place, the cover plate scribe line is scratched, the scribing THICKNESS CONTROL is the thickness of cover plate silicon chip;
(12) the bonding disk in the step (11) is carried out scribing by scribing machine on transverse axis and y direction, the scribing THICKNESS CONTROL is the thickness of bonding disk.Method by scribing is separated the resonator element on the disk, obtains bulk silicon micro mechanic resonator chip (Fig. 2-9);
(13) resonator chip is fixed on a substrate or the base, and detector is electrically connected (Fig. 2-10) with substrate or base by the method for routing
The cover plate silicon chip adopts lightly doped N type silicon chip, by methods such as oxidation, gluing photoetching, silica erosion, ion injections, forms the P+ district at the cover plate silicon chip.On resonator structure disk and cover plate disk, all deposited one deck TiW/Au metal level, the metal level on structure disk and the cover plate disk has been carried out graphically by photoetching and corroding method.At the method coating last layer binder (binder can be glass paste, polymer or metal) of cover plate silicon chip back by silk screen printing, and binder is graphical, and binder is as solder layer.Resonator is realized being electrically connected with external circuitry by the P+ district.The electrical resistivity range of silicon substrate and structure silicon chip is 0.01-0.3 Ω cm, and the electrical resistivity range of cover plate silicon chip is 0.01-1 Ω cm.The main technique step comprises:
(1) on the monocrystalline silicon piece of polishing, make the bottom cavity that discharges in order to resonator structure by the anisotropic wet etching process of oxidation, photoetching, silicon, this moment, silicon substrate was not worn by corruption.
(2) by on the silicon chip of thermal oxidation in step (1) growth layer of silicon dioxide as electric insulation layer.
(3) use bonding technology, with the silicon chip of step (2) and a slice monocrystalline silicon piece Direct Bonding in addition together, and by reduction process with the wafer thinning of cavity top to the required thickness of resonator structure.
(4) at the backside deposition metal level of the bonding disk of step (3);
(5) at the front depositing metal layers of the bonding disk of step (4), and it is graphical by technologies such as photoetching, corrosion of metals, the structure silicon chip positive make with the cover plate silicon chip on the contacted metal pad of soldered ball.See Fig. 2-3.
(6) by technologies such as photoetching, DRIE the upper strata silicon chip of step (5) is carried out structure and discharge, form the structure of resonator.
(7) on the 3rd low-doped silicon chip, produce the curved cavity of forming vacuum chamber and the groove structure that applies binder by methods such as oxidation, gluing photoetching, silica erosion, silicon corrosion.
(8) silica on the silicon chip that obtains of graphical step (7), and it is carried out ion inject, the P+ district formed at injection zone.See Fig. 3-1.
(9) silicon chip in the step (8) is carried out thermal oxidation after, as the metal level on the cover plate silicon chip disk, and the TiW/Au metal level is carried out graphical treatment at its backside deposition one deck TiW/Au by the method for gluing photoetching and chemical corrosion.Metal level after graphically good is as lead that is electrically connected with the external world on the cover plate disk and pad.Then by methods such as photoetching, plating make on the metal level be used for the structure silicon chip on pad realize the soldered ball that electrically contacts.See Fig. 3-2.
(10) silicon chip back in step (9) applies the patterned binder of last layer by the method for silk screen printing, as the solder layer on the cover plate, then binder is carried out sintering processes.See Fig. 3-3.
(11) bonding disk that comprises the resonator structure unit in the step (6) and cover plate silicon chip in the step (10) are carried out low-temperature round slice under vacuum and aim at bonding, the bonding temperature scope is 300～500 ℃.See Fig. 3-4.
(12) the bonding disk in the step (11) is carried out scribing by scribing machine at resonator chip cover plate scribe line place, the cover plate scribe line is scratched, the scribing THICKNESS CONTROL is the thickness of cover plate silicon chip.
(13) the bonding disk in the step (12) is carried out scribing by scribing machine on transverse axis and y direction, the scribing THICKNESS CONTROL is the thickness of bonding disk.Method by scribing is separated the resonator element on the disk, obtains the bulk silicon micro mechanic resonator chip, and the structure that obtains is seen Fig. 3-5.
(14) resonator chip is fixed on a substrate or the base, and detector is electrically connected with substrate or base by the method for routing.See Fig. 3-6.
The silicon substrate of body resonistor and structure silicon chip adopt low resistance silicon chip, and the electrical resistivity range of silicon substrate and structure silicon chip is 0.01-0.3 Ω cm, and the cover plate silicon chip is common silicon chip.In order to strengthen the intensity of drive signal and detection signal, further improve the performance of resonator, the resonance oscillator of two bulk silicon micro mechanic resonators can be of coupled connections together by a beam.Its specific embodiments is identical with embodiment 1.The main distinction is: (1) resonance oscillator difference: the oscillator of the resonator of embodiment 1 is a square plate, the oscillator of the resonator of present embodiment be two square plates by the figure that a beam is connected, see Fig. 1-5 (a); (2) resonator of drive electrode difference: embodiment 1 has four electrodes that are symmetrically distributed in around the resonator oscillator square plate, and the electrode of present embodiment has six, sees Fig. 1-5 (b).Other processing step is identical with embodiment 1 corresponding steps.
Claims (10)
1. bulk silicon micro mechanic resonator is characterized in that comprising silicon substrate, structure silicon chip, cover plate silicon chip, electric insulation layer, resonator oscillator, pad and binder:
Wherein, 1) described resonator is bonded together for three layers by silicon substrate, structure silicon chip and cover plate silicon chip and forms, the front of silicon substrate and structure silicon chip back, and the front of structure silicon chip and cover plate silicon chip back stick together by bonding respectively;
2) silicon substrate has the curved cavity from front etch;
3) resonator oscillator, drive electrode and detector electrode structure are positioned on the structure silicon chip;
4) silicon substrate front cavity and cover plate silicon chip back side cavity are formed a vacuum chamber, and the resonator oscillator is arranged in this vacuum chamber;
5) the structure silicon chip is positioned at the top of silicon substrate, and the resonance oscillator is unsettled directly over the substrate cavity;
6) electric insulation layer is between silicon substrate and the structure silicon chip.
2. bulk silicon micro mechanic resonator according to claim 1 is characterized in that:
1) the cover plate silicon chip back side has curved cavity and the coating binder groove that is used to form vacuum chamber, and cavity is in directly over the resonator, applies one week of the outside that the binder groove is distributed in cover plate silicon chip cavity;
2) two sides of cover plate silicon chip all has the electric insulating medium layer;
3) the cover plate silicon chip back has the patterned metal level that one deck is realized and the external world is electrically connected, and layer metal deposition is on electric insulation layer;
4) on the metal level of cover plate silicon chip the metal soldered ball is arranged, soldered ball be positioned at structure silicon chip pad directly over the position, when cover plate silicon chip and structure wafer bonding, the soldered ball on the cover plate closely contacts with pad on the structure silicon chip, thereby realizes electrically contacting;
5) back side of cover plate has the patterned binder of a circle, and binder is in the cover plate silicon chip binder groove, and it is positioned on the metal level, and width is less than recess width.
3. body resonistor according to claim 1 is characterized in that described resonator oscillator structure is square plate, circular slab, Circular Plate or cantilever beam structure.
4. body resonistor according to claim 1 is characterized in that:
1) beam of support resonator oscillator structure is oblique straining beam of T type or vertical pulling beam;
2) two and two above resonator oscillators are coupled together by beam, these two or more resonator oscillators and beam integral body are as a resonance oscillator.
5. body resonistor according to claim 1 is characterized in that described body resonistor is connected with external circuitry by metal level or is connected with external circuitry by the P+ district.
6. make method as each described bulk silicon micro mechanic resonator among the claim 1-5, it is characterized in that earlier with suspension structure---the cavity under the resonance oscillator is made, again the method for device architecture layer by bonding is produced on the cavity top, then by being dry-etched in when making the resonator structure, also the resonator structure is discharged, utilize the vacuum disk to aim at bonding at last the cover plate silicon chip is fixed on structure silicon chip top, concrete making step is:
(1) on silicon substrate, produce cavity by the anisotropic wet corrosion or the dry etch process of oxidation, photoetching and silicon, then by oxidation technology, growth layer of silicon dioxide layer on silicon substrate;
(2) by bonding technology, silicon substrate that step (1) is obtained and structure wafer bonding are together;
(3) utilize reduction process, the reduced thickness that step (2) is obtained the structure silicon chip on the bonding silicon chip is to the required thickness of resonator structure;
(4) the backside deposition metal level of the silicon substrate that obtains in step (3);
(5) at the front depositing metal layers of the structure silicon chip of step (4), and by the metallic layer graphic of technologies such as photoetching, corrosion with structure silicon chip front, form with the cover plate silicon chip on the contacted metal pad of soldered ball;
(6) by photoetching and deep reaction ion etching technology, the structure silicon chip front that step (5) is made processes needed resonator structure;
(7) on the cover plate silicon chip, produce curved cavity by methods such as oxidation, gluing photoetching, silica erosion, silicon corrosion, after its thermal oxidation, deposit pad, lead, soldered ball that is used to electrically contact and the binder that is used for Vacuum Package thereon;
(8) the cover plate silicon chip is aimed at bonding by the vacuum disk and be fixed on the structure silicon chip that step (6) obtains, resonator is carried out the wafer level Vacuum Package;
(9) adopt scribing machine that the described bonding disk of step (8) is carried out a scribing on the direction, the scribe line on the body resonistor chip cover plate pad is scratched by the method for scribing;
(10) adopt scribing machine that bonding disk described in the step (9) is carried out scribing on transverse axis and the y direction, the body resonistor unit on the disk is separated;
(11) the single body resonistor chip that obtains after the scribing is fixed on the substrate, and is electrically connected with substrate by the method for routing.
7. manufacture method as claimed in claim 6 is characterized in that the structure silicon chip is to use chemical mechanical method or wet etching method attenuate in the step 3.
8. manufacture method as claimed in claim 6 is characterized in that the release of the making resonator device architecture of resonator structure is finished simultaneously.
9. manufacture method as claimed in claim 6, the resistivity that it is characterized in that described structure silicon chip or silicon substrate are 0.01-0.3 Ω cm, the no requirement (NR) of cover plate silicon chip resistivity.
10. manufacture method as claimed in claim 6, it is characterized in that the cover plate silicon chip adopts lightly doped N type silicon chip, after oxidation, gluing photoetching, silica erosion and ion injection, form the P+ district at the cover plate silicon chip, the resistivity of the cover plate silicon chip that uses is 0.01-1 Ω cm.
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