CN101997510A - Manufacturing method of wafer level encapsulating structure for through-hole vibrator device - Google Patents
Manufacturing method of wafer level encapsulating structure for through-hole vibrator device Download PDFInfo
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- CN101997510A CN101997510A CN201010510173XA CN201010510173A CN101997510A CN 101997510 A CN101997510 A CN 101997510A CN 201010510173X A CN201010510173X A CN 201010510173XA CN 201010510173 A CN201010510173 A CN 201010510173A CN 101997510 A CN101997510 A CN 101997510A
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Abstract
The invention relates to a manufacturing method of a wafer level encapsulating structure for a through-hole vibrator device. The method comprises the following steps of: forming an encapsulating ring layer on a provided upper cover and patterning the encapsulating ring layer so as to form an encapsulating ring; etching a groove on the upper cover by using the encapsulating ring as a shield; forming a vertical current-conducting through hole on a provided base and manufacturing a layer of encapsulating ring opposite to the encapsulating ring of the upper cover on the base; putting a vibrator unit into the base and electrically connecting the vibrator unit with the current-conducting through hole; and encapsulating in combination with the upper cover and the base, thinning the upper cover and the base to expose the current-conducting through hole and manufacturing a base metal weld pad on the current-conducting through hole. The defects of the conventional encapsulation which uses a ceramic base are overcome, the thermal stress problem caused by a sandwich encapsulating structure is improved, the manufacture procedure is simplified in a large scale, manufacturing cost is lowered, and the deposition of pollutants is reduced because the outer edge of the encapsulating ring is flush with the upper cover and the base.
Description
Technical field
The present invention relates to oscillator device and make the field, particularly relate to a kind of manufacture method of through-hole type wafer-level package structure for vibrator device.
Background technology
Quartz component has stable piezoelectric property, and accurate and broad functions such as reference frequency, FREQUENCY CONTROL, timing function and filtered noise can be provided, and in addition, quartz component also can be as motion and transducer such as pressure, and important optical module; Therefore, for electronic product, quartz component is being played the part of critical role.
And at the encapsulation of quartz vibrator crystal, many kinds of schemes have been proposed before, for example United States Patent (USP) is announced No. 5030875 patent " sacrificial quartz crystal bracing frame " (Sacrificial Quartz-crystal Mount), the packaged type that belongs to early stage metal cap body (Metal Cap), its overall package complex structure, volume can't dwindle.United States Patent (USP) is announced No. 6545392 patent " encapsulating structure of piezoelectric resonator " (PackageStructure for a Piezoelectric Resonator), the main ceramic packaging body that adopts encapsulates the quartz tuning-fork oscillator, and the structure of improvement base of ceramic (Package) and loam cake (Lid), make the quartz tuning-fork oscillator have preferable shock resistance, yet this packaging body cost height and size can't further reduce.
United States Patent (USP) is announced No. 6531807 patent " piezo-electric device " (Piezoelectric Device), be primarily aimed at the encapsulation of carrying out quartz vibrator and oscillating circuit chip at the base of ceramic of zones of different, and utilize lead on the base of ceramic to do to be electrically connected, the oscillating circuit chip is with resin-encapsulated simultaneously, and quartz vibrator is then done welding encapsulation (Seam Welding) with loam cake; Yet,, make that therefore area increasing and cost of manufacture are high because two chips respectively are placed on different blocks, and are packaging body with the base of ceramic.
And for example United States Patent (USP) is announced No. 7098580 patent " piezoelectric oscillator " (Piezoelectric Oscillator), mainly with quartz chip and integrated circuit respectively with after the encapsulation of ceramic packaging body, the action that is electrically connected again, though can effectively dwindle area for cutting, but overall volume still can't effectively reduce, and the cost of manufacture of this packaged type is also higher relatively simultaneously.
And United States Patent (USP) is announced No. 7608986 patent " quartz oscillator " (Quartz Crystal Resonator), be mainly the wafer-level packaging form, it mainly with lid and bottom base on the glass material (Blue Plate Glass), finishes a sandwich structure with quartz chip by anodic bonding.Yet therefore this sandwich structure can cause inner quartz chip to produce thermal stress when variations in temperature because base material is different with the thermal coefficient of expansion of quartz, makes frequency produce shift phenomenon with temperature.Therefore, need the special corner cut of quartz chip and the thermal coefficient of expansion of loam cake and bottom base material selected, just have way to overcome this difficulty, yet on making and on the cost, all relatively take a lot of work.
Prior art all can't escape adopts the awkward situation of base of ceramic encapsulation at present, and not only product cost height and source of goods instability, and the thermal stress issues that encapsulating structure caused of sandwich-like still can't effectively be solved.
Summary of the invention
Technical problem to be solved by this invention provides a kind of manufacture method of through-hole type wafer-level package structure for vibrator device, escape adopts the awkward situation of base of ceramic encapsulation at present, product cost reduces and the source of goods is stablized, and improves the thermal stress issues that the sandwich encapsulating structure is caused.
The technical solution adopted for the present invention to solve the technical problems is: a kind of manufacture method of through-hole type wafer-level package structure for vibrator device is provided, may further comprise the steps:
(1) provides a loam cake;
(2) form an encapsulation circular layer last covering, and the encapsulation circular layer is carried out graphically to form the encapsulation ring;
(3) utilize the encapsulation ring for shielding, etch groove last covering;
(4) provide a pedestal, and on this pedestal, offer and the orthogonal conductive through hole of pedestal;
(5) on pedestal, make one deck encapsulation ring, the position of this encapsulation ring with on cover that to encapsulate the position of encircling corresponding mutually;
(6) the oscillator unit is binded in pedestal, and be electrically connected with the conductive through hole formation;
(7) aim at the encapsulation ring of loam cake and the encapsulation ring of pedestal,, encapsulate in conjunction with loam cake and pedestal;
(8) tops and base bottom in the thinning are exposed conductive through hole, and make the pedestal metal pad at the conductive through hole place;
(9) be made into single assembly with laser cutting or saw blade cutting.
In described step (4), comprise following substep:
1) on pedestal, utilize sputtering way or evaporation mode to make the layer of metal layer;
2) adopt the gold-tinted visualization way with metallic layer graphic, the zone of exposed portions serve pedestal;
3) adopt the dry-etching mode on the zone of exposed portions serve pedestal, to etch pothole, and use the mode of Wet-type etching that metal level is removed;
4) adopt plating mode to fill up electrodeposited coating in the pothole, and form one deck electrodeposited coating, grind the electrodeposited coating of pedestal upper surface,, form conductive through hole until exposing pedestal at pedestal upper surface.
When the encapsulation ring in described step (2) and the step (5) is metal material, adopt sputtering way or evaporation mode to make; When the encapsulation ring is the organic polymer material, adopt the mode of spin coating to make; When the encapsulation ring is the oxide material, adopt chemical vapour deposition (CVD) or thermal oxidation processing procedure to make.
The oscillator unit is positioned on the pedestal by a glue and automatic clamp device in the described step (6), and being electrically connected by conductive projection realization and conductive through hole.
Oscillator unit in the described step (6) is quartz-crystal unit or mechanical resonance pattern oscillator; Wherein, described quartz-crystal unit is temperature stabilization corner cut quartz-crystal unit or tuning-fork-type quartz-crystal unit.
Tops can carry out after step (3) in the thinning in the described step (8); The thinning base bottom is exposed conductive through hole and can be carried out after step (5).
The technical solution adopted for the present invention to solve the technical problems is: a kind of manufacture method of through-hole type wafer-level package structure for vibrator device also is provided, may further comprise the steps:
(1) provides a loam cake;
(2) form an encapsulation circular layer last covering, and the encapsulation circular layer is carried out graphically to form the encapsulation ring;
(3) provide a pedestal, and on this pedestal, offer and the orthogonal conductive through hole of pedestal;
(4) on pedestal, make one deck encapsulation ring, the position of this encapsulation ring with on cover that to encapsulate the position of encircling corresponding mutually;
(5) utilize the encapsulation ring for shielding, on pedestal, etch groove;
(6) the oscillator unit is binded in pedestal, and be electrically connected with the conductive through hole formation;
(7) aim at the encapsulation ring of loam cake and the encapsulation ring of pedestal,, encapsulate in conjunction with loam cake and pedestal;
(8) tops and base bottom in the thinning are exposed conductive through hole, and make the pedestal metal pad at the conductive through hole place;
(9) be made into single assembly with laser cutting or saw blade cutting.
Beneficial effect
Owing to adopted above-mentioned technical scheme, the present invention compared with prior art, have following advantage and good effect: the present invention utilizes the vertical conductive through hole that is opened in pedestal that runs through, make the pedestal metal pad of oscillator unit and bottom form electric connection, therefore, escape adopts the awkward situation of base of ceramic encapsulation at present, and product cost reduces and the source of goods is stablized, and improves the thermal stress issues that the sandwich encapsulating structure is caused.Make processing procedure batch to produce and on wafer, to finish overall package by the wafer joining technique, reduce manpower and production time, reduce production costs.Simultaneously, the outer rim of encapsulation ring and loam cake and pedestal trim the plane that constitutes complete no groove, reduce the accumulation of pollutant; Encapsulate the inner edge of ring and the recess edge of loam cake and trim, increased the area of encapsulation ring, improve bond strength and sealing effectiveness, and encapsulate the shielding that ring can be used as subsequent, significantly simplified and manufactured flow process.
Description of drawings
Fig. 1 is a first embodiment of the invention through-hole type wafer-level package structure for vibrator device schematic diagram;
Fig. 2 is the crude loam cake schematic diagram of the present invention;
Fig. 3 is the loam cake schematic diagram that the present invention forms the encapsulation circular layer;
Fig. 4 is the loam cake schematic diagram that the present invention forms the encapsulation ring;
Fig. 5 is that the present invention utilizes the Wet-type etching mode to etch the loam cake schematic diagram of groove;
Fig. 6 is that the present invention utilizes the dry-etching mode to etch the loam cake schematic diagram of groove;
Fig. 7 is the crude pedestal schematic diagram of the present invention;
Fig. 8 is the pedestal schematic diagram that the present invention is coated with metal level;
Fig. 9 is the pedestal schematic diagram behind the metallic layer graphic of the present invention;
Figure 10 is that etching of the present invention has pothole and removes the pedestal schematic diagram of metal level;
Figure 11 is the pedestal schematic diagram that the present invention fills up electrodeposited coating;
Figure 12 is the pedestal schematic diagram that the present invention has conductive through hole;
Figure 13 is the pedestal schematic diagram that the present invention forms the encapsulation ring;
Figure 14 is the pedestal schematic diagram that the oscillator unit is equipped with in the present invention;
Figure 15 is that pedestal of the present invention and loam cake are in conjunction with schematic diagram;
Figure 16 is that pedestal after the thinning of the present invention and loam cake are in conjunction with schematic diagram;
Figure 17 is a first embodiment of the invention through-hole type wafer-level package structure for vibrator device electrode transition state schematic diagram;
Figure 18 is first embodiment of the invention through-hole type wafer-level package structure for vibrator device conductive through hole schematic diagram under the encapsulation ring;
Figure 19 is a second embodiment of the invention through-hole type wafer-level package structure for vibrator device schematic diagram;
Figure 20 is a second embodiment of the invention through-hole type wafer-level package structure for vibrator device electrode transition state schematic diagram.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used to the present invention is described and be not used in and limit the scope of the invention.Should be understood that in addition those skilled in the art can make various changes or modifications the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims institute restricted portion equally.
First execution mode of the present invention relates to a kind of manufacture method of through-hole type wafer-level package structure for vibrator device, and this through-hole type wafer-level package structure for vibrator device as shown in Figure 1.
This through-hole type wafer-level package structure for vibrator device includes oscillator unit 20, loam cake 10, pedestal 40, encapsulation ring 30 and conductive through hole 50, oscillator unit 20 can be for temperature stabilization corner cut quartz-crystal unit, also can be the tuning-fork-type quartz-crystal unit, it can also be other mechanical resonance pattern oscillator, and 20 upper and lower surfaces have upper surface electrode 21 and lower surface electrode 22 respectively in the oscillator unit, use exciting oscillator unit 20, and be electrically connected to the pedestal metal pad 41 of bottom base 40 by conductive projection 23.Wherein, upper surface electrode 21 and lower surface electrode 22 lay respectively at the opposite side of oscillator unit 20, and conductive projection 23 can be conducting resinl material or metal coupling that silver powder particles and resin etc. are formed, and wherein metal coupling can be made of one of gold, copper, tin, silver, indium or its alloy.
Therefore, oscillator unit 20 is configured on the pedestal 40, and the outer rim of pedestal 40 upper surfaces is provided with encapsulation ring 30, and this encapsulation ring 30 can constitute by the alloy of copper, tin, gold, silver, indium and above-mentioned metal or organic polymer or oxide.If when encapsulation ring 30 was metal material, loam cake 10 and pedestal 40 may conduct electricity, and then must be provided with one deck insulant between loam cake 10 and pedestal 40, to avoid loam cake 10 and pedestal 40 situation of conducting takes place.Encapsulate loam cake 10 by encapsulation ring 30, the lower surface of loam cake 10 has groove 11 and is installed with oscillator unit 20.So loam cake 10, pedestal 40 see through encapsulation ring 30, and oscillator unit 20 can be made level Hermetic Package, its internal environment can be vacuum or filling nitrogen; The material of loam cake 10 can be silicon, glass, quartz, pottery, metal material etc., the material of pedestal 40 can be non-conducting materials such as silicon, glass, quartz, pottery equally, moreover, if both (loam cakes 10 and pedestal 40) are selected for use identical material, can further prevent the problem of thermal stress.
Conductive through hole 50 vertically runs through pedestal 40 and is provided with, its material can be metal conductive materials, alloy of copper, tungsten, aluminium, Yin Jin and above-mentioned metal etc. for example, and conductive through hole 50 also can be polysilicon or conducting polymer, as long as all can conduct electricity, and utilize the silicon through hole technology to give moulding.Be electrically connected at surface electrode 21 and lower surface electrode 22 on the oscillator unit 20 above the conductive through hole 50, and it is electrically connected to pedestal metal pad 41, make it do electric connection, input of electric energy and signal and output are provided with the outside.
Fig. 2-shown in Figure 6 is the loam cake making flow process of through-hole type wafer-level package structure for vibrator device.At first, provide loam cake 10 (as Fig. 2), and make one deck encapsulation circular layer 301 (as Fig. 3) on loam cake 10, its manufacture method is different according to material character.When encapsulation circular layer 301 when being metal material, as when being the alloy of copper, tin, gold, silver, indium and above-mentioned metal, can make by sputtering way (Sputter) or evaporation mode (Evaporator); When encapsulation circular layer 301 is the organic polymer material, then can make by the mode of spin coating (spin coating); When encapsulation circular layer 301 is the oxide material, then can make by chemical vapor deposition (CVD) or thermal oxidation processing procedure (thermal Oxidation).
Then,, will encapsulate circular layer 301 and graphically form encapsulation ring 30, and give perforate exposed portions serve loam cake 10 zones (as Fig. 4) by the gold-tinted developing manufacture process.Then, utilize wet etch process to come to make groove 11 (as Fig. 5) on loam cake 10, Wet-type etching can be the etching of KOH solution, also can be the etching of TMAH solution; At this moment, graphical encapsulation ring 30 can be used as the shielding of etching solution, further simplifies and makes flow process, and reduce cost of manufacture.On the other hand, also can make groove 11 by the dry-etching processing procedure, shown in Figure 6 is the loam cake that adopts induction coupled plasma ion(ic) etching (Inductively CoupledPlasma Reactive Ion Etching) processing procedure to make.
Fig. 7-shown in Figure 13 is the pedestal making flow process of through-hole type wafer-level package structure for vibrator device.At first, provide pedestal 40 (as Fig. 7), then make layer of metal layer 60 (as Fig. 8) on pedestal 40, its manufacture method can be made by sputtering way or evaporation mode, and metal level 60 can be metal materials such as aluminium, silver, gold.By the gold-tinted developing manufacture process, metal level 60 is given graphically then, and the zone (as Fig. 9) of perforate exposed portions serve pedestal 40.Then, as shown in figure 10, etch pothole 401 by the dry-etching processing procedure, the dry-etching processing procedure can be induction coupled plasma ion(ic) etching processing procedure, then and utilize wet etch process that metal level 60 is removed.
As shown in figure 11, utilize electroplating process, pothole 401 is filled up and forms thereon electrodeposited coating 70, utilize the precise finiss processing procedure thereupon, grind the upper surface of electrodeposited coating 70, until exposing pedestal 40, to form conductive through hole 50 (as Figure 12).
Then, as shown in figure 13, make one deck encapsulation ring 30 on pedestal 40, its manufacture method is different when encapsulation ring 30 is metal material according to material character, be the alloy of copper, tin, gold, silver, indium and above-mentioned metal for example, can make by sputtering way or evaporation mode; When encapsulation ring 30 is the organic polymer material, then can make by the mode of spin coating; When encapsulation ring 30 is the oxide material, then can make, and it is graphical to encapsulate ring 30 by gold-tinted development and etch process by chemical vapour deposition (CVD) or thermal oxidation processing procedure.
Carry out the encapsulation of oscillator unit 20 at last, shown in Figure 14-16, at first oscillator unit 20 is positioned on the conductive through hole 50 by a glue and automatic clamp device, and conductive projection 23 is solidified by the high-temperature baking processing procedure, by the electric binding between conductive projection 23 realization oscillator unit and the conductive through hole, as shown in figure 14.
As shown in figure 15, carry out aiming at and connection process of pedestal 40 and loam cake 10, same, look encapsulation ring 30 material characteristics and adopt different joint methods.When encircling to metal material, encapsulation adopt metal to fuse or eutectic bond; When being the organic polymer material, adopts on the encapsulation ring bonding technique; When being the oxide material, the encapsulation ring adopt the anodic oxidation joining technique to finish this encapsulation procedure.Then utilize the precise finiss technology, with wafer thinning and expose conductive through hole 50,10 of loam cakes are looked to use with dimensions and are determined whether carrying out the thinning processing procedure, through the pedestal after the thinning and loam cake as shown in figure 16.At last, utilize metal deposition processing procedure, gold-tinted developing manufacture process and electroplating process etc., make pedestal metal pad 41, illustrate is the wafer-level packaging processing procedure of two assemblies among the figure, therefore need be cut the back and use, and the structure after cutting is finished as shown in Figure 1.And above-mentioned thinning processing procedure also can carry out when loam cake 10 and pedestal 40 are finished, and need not wait until in conjunction with after just carry out thinning.
Need to prove,, also it can be designed to be positioned at same side, as shown in figure 17 except above-mentioned upper surface electrode 21 is positioned at the opposite side of oscillator unit 20 with lower surface electrode 22.Equally, conductive through hole 50 can also vertically be applied in encapsulation ring 30 belows, as shown in figure 18, because of conductive through hole 50 is to form by the silicon through hole technology, and silicon through hole is one of inner bubble-tight factor of influence, therefore, when the mode by cabling is opened in the below of encapsulation ring 30 with conductive through hole 50, influence the factor of packaging air tightness, the quality that only remaining encapsulation ring 30 engages, inner encapsulation gas can not produce exchange with the external world via the silicon through hole cabling.Therefore, the air-tightness of overall package structure will easier acquisition control.
Second execution mode of the present invention relates to a kind of manufacture method of through-hole type wafer-level package structure for vibrator device equally, this method and first execution mode are roughly the same, its difference is, this method only needs to make encapsulation ring 30 and gets final product in the manufacturing process of loam cake 10, and the manufacturing process of pedestal 40 is after finishing the encapsulation ring 30 of pedestal 40 in the first embodiment, offer groove again on pedestal 40, the method for offering groove 11 in the method for offering groove and first execution mode on loam cake 10 is identical.As shown in figure 19, utilize the through-hole type wafer-level package structure for vibrator device of this method manufacturing not offer groove 11 at the lower surface of loam cake 10, and offer the groove of placing oscillator unit 20 at the upper surface of pedestal 40, can reach the effect identical equally with first execution mode.The upper surface electrode 21 of present embodiment also can be positioned at same side with lower surface electrode 22 equally as shown in figure 20.Conductive through hole 50 can be positioned at by the mode of cabling too encapsulation ring 30 under.
Be not difficult to find, the present invention is by vertically running through the conductive through hole that is opened in pedestal, make the pedestal metal pad of oscillator unit and bottom form electric connection, therefore, escape adopts the awkward situation (comprising product cost height and source of goods instability etc.) of base of ceramic encapsulation at present, and improves the thermal stress issues that the sandwich encapsulating structure is caused.Utilize the wafer joining technique batch to produce quartz-crystal unit, reduce manpower and production time, reduce production costs.The outer rim of encapsulation ring trims with loam cake and pedestal, and constitutes the plane of complete no groove, reduces the accumulation of pollutant, and the edge of the inner edge of encapsulation ring and the groove of loam cake or pedestal trims, and can increase the area that encapsulation encircles, raising bond strength and sealing effectiveness.The encapsulation ring also can be used as the shielding of etching solution in the subsequent etch processing procedure, can significantly simplify processing procedure.
Claims (7)
1. the manufacture method of a through-hole type wafer-level package structure for vibrator device is characterized in that, may further comprise the steps:
(1) provides a loam cake;
(2) form an encapsulation circular layer last covering, and the encapsulation circular layer is carried out graphically to form the encapsulation ring;
(3) utilize the encapsulation ring for shielding, etch groove last covering;
(4) provide a pedestal, and on this pedestal, offer and the orthogonal conductive through hole of pedestal;
(5) on pedestal, make one deck encapsulation ring, the position of this encapsulation ring with on cover that to encapsulate the position of encircling corresponding mutually;
(6) the oscillator unit is binded in pedestal, and be electrically connected with the conductive through hole formation;
(7) aim at the encapsulation ring of loam cake and the encapsulation ring of pedestal,, encapsulate in conjunction with loam cake and pedestal;
(8) tops and base bottom in the thinning are exposed conductive through hole, and make the pedestal metal pad at the conductive through hole place;
(9) be made into single assembly with laser cutting or saw blade cutting.
2. the manufacture method of through-hole type wafer-level package structure for vibrator device according to claim 1 is characterized in that, comprises following substep in described step (4):
1) on pedestal, utilize sputtering way or evaporation mode to make the layer of metal layer;
2) adopt the gold-tinted visualization way with metallic layer graphic, the zone of exposed portions serve pedestal;
3) adopt the dry-etching mode on the zone of exposed portions serve pedestal, to etch pothole, and use the mode of Wet-type etching that metal level is removed;
4) adopt plating mode to fill up electrodeposited coating in the pothole, form one deck electrodeposited coating at pedestal upper surface simultaneously, grind the electrodeposited coating of pedestal upper surface,, promptly form conductive through hole until exposing pedestal.
3. the manufacture method of through-hole type wafer-level package structure for vibrator device according to claim 1 is characterized in that, when the encapsulation ring in described step (2) and the step (5) is metal material, adopts sputtering way or evaporation mode to make; When the encapsulation ring is the organic polymer material, adopt the mode of spin coating to make; When the encapsulation ring is the oxide material, adopt chemical vapour deposition (CVD) or thermal oxidation processing procedure to make.
4. the manufacture method of through-hole type wafer-level package structure for vibrator device according to claim 1, it is characterized in that, the oscillator unit is positioned on the pedestal by a glue and automatic clamp device in the described step (6), and being electrically connected by conductive projection realization and conductive through hole.
5. the manufacture method of through-hole type wafer-level package structure for vibrator device according to claim 1 is characterized in that, the oscillator unit in the described step (6) is quartz-crystal unit or mechanical resonance pattern oscillator; Wherein, described quartz-crystal unit is temperature stabilization corner cut quartz-crystal unit or tuning-fork-type quartz-crystal unit.
6. the manufacture method of through-hole type wafer-level package structure for vibrator device according to claim 1 is characterized in that, tops can carry out after step (3) in the thinning in the described step (8); The thinning base bottom is exposed conductive through hole and can be carried out after step (5).
7. the manufacture method of a through-hole type wafer-level package structure for vibrator device is characterized in that, may further comprise the steps:
(1) provides a loam cake;
(2) form an encapsulation circular layer last covering, and the encapsulation circular layer is carried out graphically to form the encapsulation ring;
(3) provide a pedestal, and on this pedestal, offer and the orthogonal conductive through hole of pedestal;
(4) on pedestal, make one deck encapsulation ring, the position of this encapsulation ring with on cover that to encapsulate the position of encircling corresponding mutually;
(5) utilize the encapsulation ring for shielding, on pedestal, etch groove;
(6) the oscillator unit is binded in pedestal, and be electrically connected with the conductive through hole formation;
(7) aim at the encapsulation ring of loam cake and the encapsulation ring of pedestal,, encapsulate in conjunction with loam cake and pedestal;
(8) tops and base bottom in the thinning are exposed conductive through hole, and make the pedestal metal pad at the conductive through hole place;
(9) be made into single assembly with laser cutting or saw blade cutting.
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| CN201010510173XA CN101997510A (en) | 2010-10-18 | 2010-10-18 | Manufacturing method of wafer level encapsulating structure for through-hole vibrator device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102281042A (en) * | 2011-05-13 | 2011-12-14 | 李东 | Frequency device and packaging method thereof |
| CN103030101A (en) * | 2011-09-29 | 2013-04-10 | 罗伯特·博世有限公司 | Method for producing a two-chip assembly and corresponding two-chip assembly |
| CN103708407A (en) * | 2012-09-29 | 2014-04-09 | 上海丽恒光微电子科技有限公司 | Wafer-level packaging structure and method of integrated MEMS sensor |
| CN105958959A (en) * | 2016-06-29 | 2016-09-21 | 维沃移动通信有限公司 | Crystal oscillator and production method thereof |
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| CN1349304A (en) * | 2000-08-07 | 2002-05-15 | 日本板硝子株式会社 | Transistor vibrator assembly and its mfg. method, and method for mfg. various connected glass plate used for electronic element assembly |
| CN101556939A (en) * | 2009-05-19 | 2009-10-14 | 珠海粤科京华电子陶瓷有限公司 | Ceramic encapsulated base and manufacture method thereof |
| CN101820264A (en) * | 2010-04-06 | 2010-09-01 | 台晶(宁波)电子有限公司 | Through-hole type wafer-level package structure for vibrator device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1349304A (en) * | 2000-08-07 | 2002-05-15 | 日本板硝子株式会社 | Transistor vibrator assembly and its mfg. method, and method for mfg. various connected glass plate used for electronic element assembly |
| CN101556939A (en) * | 2009-05-19 | 2009-10-14 | 珠海粤科京华电子陶瓷有限公司 | Ceramic encapsulated base and manufacture method thereof |
| CN101820264A (en) * | 2010-04-06 | 2010-09-01 | 台晶(宁波)电子有限公司 | Through-hole type wafer-level package structure for vibrator device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102281042A (en) * | 2011-05-13 | 2011-12-14 | 李东 | Frequency device and packaging method thereof |
| CN103030101A (en) * | 2011-09-29 | 2013-04-10 | 罗伯特·博世有限公司 | Method for producing a two-chip assembly and corresponding two-chip assembly |
| CN103708407A (en) * | 2012-09-29 | 2014-04-09 | 上海丽恒光微电子科技有限公司 | Wafer-level packaging structure and method of integrated MEMS sensor |
| CN105958959A (en) * | 2016-06-29 | 2016-09-21 | 维沃移动通信有限公司 | Crystal oscillator and production method thereof |
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Application publication date: 20110330 |