CN201846319U - Improved vibrator wafer level encapsulation structure - Google Patents
Improved vibrator wafer level encapsulation structure Download PDFInfo
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- CN201846319U CN201846319U CN2010205654786U CN201020565478U CN201846319U CN 201846319 U CN201846319 U CN 201846319U CN 2010205654786 U CN2010205654786 U CN 2010205654786U CN 201020565478 U CN201020565478 U CN 201020565478U CN 201846319 U CN201846319 U CN 201846319U
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- pedestal
- wafer level
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- oscillator
- packaging structure
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Abstract
The utility model relates to an improved vibrator wafer level encapsulation structure which comprises a vibrator unit, an upper cover, a pedestal, an encapsulation ring and at least one conductive through hole, wherein the vibrator unit is arranged on the pedestal; the encapsulation ring is arranged at and mutually flush with the outer edge of the pedestal; the upper cover is arranged on the encapsulation ring, is located outside the vibrator unit in a covering manner and encapsulates the vibrator unit; the outer edge of the upper cover is mutually flush with the encapsulation ring; the conductive through hole vertically passes through the pedestal; the upper surface of the vibrator unit is provided with an upper surface electrode, and the lower surface of the vibrator unit is provided with a lower surface electrode; the upper surface electrode and the lower surface electrode are electrically and respectively connected with the upper end of the conductive through hole by a conductive bump; the bottom part of the pedestal is provided with a pedestal metal welding pad; and the pedestal metal welding pad is electrically connected with the lower end of the conductive through hole. The encapsulation structure avoids the present awkward situation of adopting a ceramic pedestal for encapsulation and improves the problem of thermal stress caused by a sandwich encapsulation structure.
Description
Technical field
The utility model relates to the oscillator device field, particularly relates to a kind of Improvement type oscillator wafer level packaging structure that is applied in various electronic products such as mobile phone, notebook computer, automotive electronics.
Background technology
Quartz component has stable piezoelectric property, and accurate and broad functions such as reference frequency, FREQUENCY CONTROL, timing function and filtered noise can be provided, and in addition, quartz component also can be as motion and transducer such as pressure, and important optical module; Therefore, for electronic product, quartz component is being played the part of critical role.
And at the encapsulation of quartz vibrator crystal, many kinds of schemes have been proposed before, for example United States Patent (USP) is announced No. 5030875 patent " sacrificial quartz crystal bracing frame " (Sacrificial Quartz-crystal Mount), the packaged type that belongs to early stage metal cap body (Metal Cap), its overall package complex structure, volume can't dwindle.United States Patent (USP) is announced No. 6545392 patent " encapsulating structure of piezoelectric resonator " (PackageStructure for a Piezoelectric Resonator), the main ceramic packaging body that adopts encapsulates the quartz tuning-fork oscillator, and the structure of improvement base of ceramic (Package) and loam cake (Lid), make the quartz tuning-fork oscillator have preferable shock resistance, yet this packaging body cost height and size can't further reduce.
United States Patent (USP) is announced No. 6531807 patent " piezo-electric device " (Piezoelectric Device), be primarily aimed at the encapsulation of carrying out quartz vibrator and oscillating circuit chip at the base of ceramic of zones of different, and utilize lead on the base of ceramic to do to be electrically connected, the oscillating circuit chip is with resin-encapsulated simultaneously, and quartz vibrator is then done welding encapsulation (Seam Welding) with loam cake; Yet,, make that therefore area increasing and cost of manufacture are high because two chips respectively are placed on different blocks, and are packaging body with the base of ceramic.
And for example United States Patent (USP) is announced No. 7098580 patent " piezoelectric oscillator " (Piezoelectric Oscillator), mainly with quartz chip and integrated circuit respectively with after the encapsulation of ceramic packaging body, the action that is electrically connected again, though can effectively dwindle area for cutting, but overall volume still can't effectively reduce, and the cost of manufacture of this packaged type is also higher relatively simultaneously.
And United States Patent (USP) is announced No. 7608986 patent " quartz oscillator " (Quartz Crystal Resonator), be mainly the wafer-level packaging form, it mainly with lid and bottom base on the glass material (Blue Plate Glass), finishes a sandwich structure with quartz chip by anodic bonding.Yet therefore this sandwich structure can cause inner quartz chip to produce thermal stress when variations in temperature because base material is different with the thermal coefficient of expansion of quartz, makes frequency produce shift phenomenon with temperature.Therefore, need special corner cut and loam cake and the bottom base material coefficient of thermal expansion coefficient of selecting quartz chip, just have way to overcome this difficulty, yet on making and on the cost, all relatively take a lot of work.
Above-mentioned prior art all can't escape adopts the awkward situation of base of ceramic encapsulation at present, and not only product cost height and source of goods instability, and the thermal stress issues that encapsulating structure caused of sandwich-like still can't effectively be solved.
Summary of the invention
Technical problem to be solved in the utility model provides a kind of Improvement type oscillator wafer level packaging structure, and escape adopts the awkward situation of base of ceramic encapsulation at present, and product cost reduces and the source of goods is stablized, and improves the thermal stress issues that the sandwich encapsulating structure is caused.
The technical scheme that its technical problem that solves the utility model adopts is: a kind of Improvement type oscillator wafer level packaging structure is provided, comprise oscillator unit, loam cake, pedestal, encapsulation ring and at least one conductive through hole, described oscillator unit is arranged on the described pedestal; Described encapsulation ring is arranged on the outer rim of described pedestal, and concordant mutually with the pedestal outer rim; Described loam cake is arranged on the described encapsulation ring, covers at outside the described oscillator unit, and described oscillator unit is encapsulated; Described loam cake outer rim is concordant mutually with the encapsulation ring; Described conductive through hole vertically runs through described pedestal; Described oscillator unit upper surface has upper surface electrode, and lower surface has lower surface electrode; Described upper surface electrode and lower surface electrode electrically connect by conductive projection and described conductive through hole upper end respectively; Described base bottom is provided with the pedestal metal pad; Described pedestal metal pad and described conductive through hole lower end electrically connect.
Described oscillator unit is quartz-crystal unit or mechanical resonance pattern oscillator.
Described quartz-crystal unit is temperature stabilization corner cut quartz-crystal unit or tuning-fork-type quartz-crystal unit.
Described loam cake is made by silicon or glass or quartzy or pottery or metal material; Described pedestal is made by silicon or glass or quartzy or ceramic material; Described encapsulation ring is made by metal or organic polymer or oxide material.
Described loam cake adopts identical material to make with pedestal.
Described conductive projection is conducting resinl material or metal coupling.
Described upper surface electrode and lower surface electrode are arranged on the same side or the opposite side of described oscillator unit.
Described conductive through hole is positioned at encapsulation ring below or conductive projection below, and gives moulding by silicon conducting technology.
Described loam cake lower surface has a groove; The inner edge of described recess edge and described encapsulation ring trims.
Described pedestal upper surface has a groove; The inner edge of described recess edge and described encapsulation ring trims.
Beneficial effect
Owing to adopted above-mentioned technical scheme, the utility model compared with prior art, have following advantage and good effect: the utility model is by the vertical conductive through hole that runs through pedestal, make the pedestal metal pad of oscillator unit and base bottom form electric connection, therefore, escape adopts the awkward situation (comprising product cost height and source of goods instability etc.) of base of ceramic encapsulation at present, and improves the thermal stress issues that the sandwich encapsulating structure is caused.Can batch produce quartz-crystal unit by the wafer joining technique, reduce manpower and production time, reduce production costs.Simultaneously, the outer rim of encapsulation ring and the outer rim of loam cake and pedestal trim, and constitute the plane of complete no groove, to reduce the accumulation of pollutant, the edge of the inner edge of encapsulation ring and the groove of loam cake trims, and can increase the area of encapsulation ring, improves bond strength and sealing effectiveness.
Description of drawings
Fig. 1 is the Improvement type oscillator wafer level packaging structure schematic diagram of the utility model first embodiment;
Fig. 2 is an oscillator unit upper/lower electrode schematic diagram among the utility model first embodiment;
Fig. 3 is the Improvement type oscillator wafer level packaging structure schematic diagram of the utility model second embodiment;
Fig. 4 is an oscillator unit upper/lower electrode schematic diagram among the utility model second embodiment;
Fig. 5 is that the utility model first embodiment further groove changes the schematic diagram of implementing aspect;
Fig. 6 is that the utility model second embodiment further groove changes the schematic diagram of implementing aspect;
Fig. 7 is the Improvement type oscillator wafer level packaging structure schematic diagram of the utility model the 3rd embodiment;
Fig. 8 is a upper and lower electrode in oscillator unit and the schematic diagram that encapsulates the ring cabling among the utility model the 3rd embodiment.
Embodiment
Below in conjunction with specific embodiment, further set forth the utility model.Should be understood that these embodiment only to be used to the utility model is described and be not used in the restriction scope of the present utility model.Should be understood that in addition those skilled in the art can make various changes or modifications the utility model after the content of having read the utility model instruction, these equivalent form of values fall within the application's appended claims institute restricted portion equally.
Shown in Figure 1 is the Improvement type oscillator wafer level packaging structure of the utility model first embodiment.This Improvement type oscillator wafer level packaging structure includes oscillator unit 20, loam cake 10, pedestal 40, encapsulation ring 30 and conductive through hole 50.Oscillator unit 20 is quartz-crystal unit or mechanical resonance pattern oscillator, and wherein, quartz-crystal unit can be temperature stabilization corner cut quartz-crystal unit or tuning-fork-type quartz-crystal unit.The upper and lower surface of oscillator unit 20 has upper surface electrode 21 and lower surface electrode 22 (as Fig. 2) respectively, and exciting oscillator unit 20 thus is electrically connected to the pedestal metal pad 41 of pedestal 40 bottoms by conductive projection 23.Upper surface electrode 21 and lower surface electrode 22 lay respectively at the opposite side of oscillator unit 20, and conductive projection 23 can be conducting resinl material or metal coupling, and wherein the conducting resinl material can obtain by silver powder particles and resin composition; Metal coupling can be made by one of gold, copper, tin, silver, indium or its alloy.
The outer rim of encapsulation ring 30 and loam cake 10 and pedestal 40 trim, thereby constitute the plane of complete no groove, to reduce the accumulation of pollutant.The edge of the inner edge of encapsulation ring 30 and the groove 11 of loam cake 10 trims, and can increase the area of encapsulation ring 30, improves bond strength and sealing effectiveness.
Conductive through hole 50 vertically runs through pedestal 40, its material can be a metal conductive materials, such as the alloy of copper, tungsten, aluminium, silver, gold and above-mentioned metal etc., also can be polysilicon or conducting polymer, as long as all can conduct electricity, and utilize the silicon through hole technology to give moulding.Conductive through hole 50 upper ends are electrically connected at the upper surface electrode 21 and lower surface electrode 22 of oscillator unit 20, lower end and pedestal metal pad 41 electrically connect, make upper surface electrode 21 and lower surface electrode 22 to electrically connect with pedestal metal pad 41, make oscillator unit 20 do electric connection, input of electric energy and signal and output are provided with the outside.
Wherein encapsulation ring 30 is to be formed on the loam cake 10 via graphical back, when using etching solution to form groove 11, encapsulation ring 30 can be used to be used as the shielding of etching solution, and further utilizes encapsulation ring 30 to encapsulate, make flow process further to simplify, and reduce cost of manufacture.When encapsulation ring 30 is the alloy of copper, tin, gold, silver, indium and above-mentioned metal, can be encapsulated by the mode that metal fuses combination; When encapsulation ring 30 is organic polymer, then can utilize bonding technique to reach encapsulation; When encapsulation ring 30 is oxidizability material such as silicon dioxide, then can utilize the anodic oxidation joining technique to reach encapsulation.
On the other hand, except above-mentioned upper surface electrode 21 is positioned at the opposite side of oscillator unit 20 with lower surface electrode 22, also it can be designed to be positioned at same side.Shown in Figure 3 is the schematic diagram of the utility model Improvement type oscillator wafer level packaging structure second embodiment; Upper surface electrode 21 and lower surface electrode 22 are positioned at the same side of oscillator unit 20 as we know from the figure, and shown in Figure 4 is the upper and lower surface electrode schematic diagram in the second embodiment oscillator unit.
In the same manner, the design of the groove 11 of loam cake 10, be in order to be installed with oscillator unit 20, so also pedestal 40 can be designed to have the shape of groove 42, and that loam cake 10 is designed to is smooth, also can reach identical effect, as shown in Figure 5 and Figure 6, the groove that corresponds respectively to first embodiment and second embodiment changes aspect; At this moment, the inner edge of encapsulation ring 30 then trims with the edge of the groove 42 of pedestal 40, and is same, and during etched recesses, encapsulation ring 30 also can be used as the shielding of etching solution on pedestal 40.
Shown in Figure 7 is the Improvement type oscillator wafer level packaging structure schematic diagram of the utility model the 3rd embodiment.In the foregoing description, conductive through hole 50 designs vertically through pedestal 40, and is positioned at conductive projection 23 belows of oscillator unit 20; And in the present embodiment, conductive through hole 50 is designed to be positioned at encapsulation ring 30 belows, because of conductive through hole 50 is to be formed by the silicon through hole technology, and silicon through hole is one of inner bubble-tight factor of influence, therefore, in the present embodiment, the mode by cabling is opened in side under the encapsulation ring 30 with conductive through hole 50, as shown in Figure 8.When carrying out encapsulation procedure, influence the factor of packaging air tightness, the quality that only remaining encapsulation ring 30 engages, inner encapsulation gas can not produce exchange with the external world via the silicon through hole cabling.Therefore, the air-tightness of overall package structure will easier acquisition control.Certainly, groove 11, upper surface electrode 21 also can change as first embodiment and second embodiment with the relative position of lower surface electrode 22.
Be not difficult to find, the utility model is by vertically running through the conductive through hole of pedestal, make the pedestal metal pad of oscillator unit and base bottom form electric connection, therefore, escape adopts the awkward situation (comprising product cost height and source of goods instability etc.) of base of ceramic encapsulation at present, and improves the thermal stress issues that the sandwich encapsulating structure is caused.Can batch produce quartz-crystal unit by the wafer joining technique, reduce manpower and production time, reduce production costs.Simultaneously, outer rim and loam cake, the pedestal of encapsulation ring trim, thereby constitute the plane of complete no groove, to reduce the accumulation of pollutant, the inner edge of encapsulation ring and the recess edge of loam cake or pedestal trim, and can increase the area of encapsulation ring, improve bond strength and sealing effectiveness.
Claims (10)
1. Improvement type oscillator wafer level packaging structure, comprise oscillator unit (20), loam cake (10), pedestal (40), encapsulation ring (30) and at least one conductive through hole (50), it is characterized in that described oscillator unit (20) is arranged on the described pedestal (40); Described encapsulation ring (30) is arranged on the outer rim of described pedestal (40), and concordant mutually with pedestal (40) outer rim; Described loam cake (10) is arranged on the described encapsulation ring (30), covers at outside the described oscillator unit (20), and described oscillator unit (20) is encapsulated; Described loam cake (10) outer rim is concordant mutually with encapsulation ring (30); Described conductive through hole (50) vertically runs through described pedestal (40); Described oscillator unit (20) upper surface has upper surface electrode (21), and lower surface has lower surface electrode (22); Described upper surface electrode (21) and lower surface electrode (22) electrically connect by conductive projection (23) and described conductive through hole (50) upper end respectively; Described pedestal (40) bottom is provided with pedestal metal pad (41); Described pedestal metal pad (41) electrically connects with described conductive through hole (50) lower end.
2. Improvement type oscillator wafer level packaging structure according to claim 1 is characterized in that, described oscillator unit (20) is quartz-crystal unit or mechanical resonance pattern oscillator.
3. Improvement type oscillator wafer level packaging structure according to claim 2 is characterized in that, described quartz-crystal unit is temperature stabilization corner cut quartz-crystal unit or tuning-fork-type quartz-crystal unit.
4. Improvement type oscillator wafer level packaging structure according to claim 1 is characterized in that, described loam cake (10) is made by silicon or glass or quartzy or pottery or metal material; Described pedestal (40) is made by silicon or glass or quartzy or ceramic material; Described encapsulation ring (30) is made by metal or organic polymer or oxide material.
5. Improvement type oscillator wafer level packaging structure according to claim 4 is characterized in that, described loam cake (10) adopts identical material to make with pedestal (40).
6. Improvement type oscillator wafer level packaging structure according to claim 1 is characterized in that described conductive projection (23) is conducting resinl material or metal coupling.
7. Improvement type oscillator wafer level packaging structure according to claim 1 is characterized in that, described upper surface electrode (21) and lower surface electrode (22) are arranged on the same side or the opposite side of described oscillator unit (20).
8. Improvement type oscillator wafer level packaging structure according to claim 1 is characterized in that, described conductive through hole (50) is positioned at encapsulation ring (30) below or conductive projection (23) below, and gives moulding by silicon conducting technology.
9. Improvement type oscillator wafer level packaging structure according to claim 1 is characterized in that, described loam cake (10) lower surface has a groove; The inner edge of described recess edge and described encapsulation ring (30) trims.
10. Improvement type oscillator wafer level packaging structure according to claim 1 is characterized in that, described pedestal (40) upper surface has a groove; The inner edge of described recess edge and described encapsulation ring (30) trims.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205654786U CN201846319U (en) | 2010-10-18 | 2010-10-18 | Improved vibrator wafer level encapsulation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205654786U CN201846319U (en) | 2010-10-18 | 2010-10-18 | Improved vibrator wafer level encapsulation structure |
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| CN201846319U true CN201846319U (en) | 2011-05-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010205654786U Expired - Lifetime CN201846319U (en) | 2010-10-18 | 2010-10-18 | Improved vibrator wafer level encapsulation structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102013880A (en) * | 2010-10-18 | 2011-04-13 | 台晶(宁波)电子有限公司 | Improved oscillator wafer level packaging structure |
| CN111130484A (en) * | 2019-07-25 | 2020-05-08 | 珠海晶讯聚震科技有限公司 | Encapsulated electronic assembly |
-
2010
- 2010-10-18 CN CN2010205654786U patent/CN201846319U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102013880A (en) * | 2010-10-18 | 2011-04-13 | 台晶(宁波)电子有限公司 | Improved oscillator wafer level packaging structure |
| CN111130484A (en) * | 2019-07-25 | 2020-05-08 | 珠海晶讯聚震科技有限公司 | Encapsulated electronic assembly |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110525 |