TWI406382B - Welded - type vibrator device wafer - level package structure - Google Patents

Description

Through-hole vibrator device wafer level package structure

The invention relates to a vibrator device, which is applied to various electronic products such as mobile phones, notebook computers, automobile electronics, etc., in particular to a through-hole vibrator wafer level packaging structure.

Quartz components have stable piezoelectric characteristics, providing accurate and wide reference frequency, clock control, timing functions and filtering noise. In addition, quartz components can also be used as sensors for motion and pressure, as well as important Optical components; therefore, for electronic products, quartz components play a pivotal role.

For the encapsulation of quartz crystal oscillator crystals, many proposals have been made in the prior art, such as the "sacrificial quartz-crystal mount" of the US Patent Publication No. 5030875, which belongs to the early metal cap (Metal Cap). The package method has a complicated package structure and cannot be reduced in size. U.S. Patent No. 6,654,392, "Package structure for a piezoelectric resonator", which mainly uses a ceramic package to encapsulate a quartz tuning fork vibrator, and improves the ceramic package and the lid structure. Therefore, the quartz tuning fork vibrator has better shock resistance, however, the package is costly and the size cannot be further reduced.

U.S. Patent No. 6,531,807, "Piezoelectric Device", which is mainly used for encapsulating a quartz crystal oscillator and an oscillating circuit chip on ceramic pedestals in different regions, and electrically connecting the wires on the ceramic pedestal while oscillating The circuit chip is packaged in resin, and the quartz vibrator is covered by the above cover; however, since the two wafers are placed in different blocks and the ceramic base is used as the package, the area is increased and the manufacturing cost is high. No less.

In addition, the "Piezoelectric Oscillator" of the Japanese Patent Publication No. 7098580, which mainly encapsulates a quartz wafer and an integrated circuit in a ceramic package, and then performs an electrical connection operation, can effectively reduce the area problem. However, the overall volume cannot be effectively reduced, and the manufacturing cost of the packaging method is relatively high.

The US Patent Publication No. 7608986 "Quartz crystal resonator" is mainly a wafer-level package form, which mainly uses a blue plate glass upper cover and a lower base, and a quartz wafer. Anode bonding completes a sandwich structure. However, this sandwich structure differs in thermal expansion coefficient between the substrate and the quartz, so that when the temperature changes, the internal quartz wafer generates thermal stress, so that the frequency shifts with temperature. Therefore, it is necessary to specifically select the chamfer angle of the quartz wafer and the thermal expansion coefficient of the upper and lower base materials in order to overcome this difficulty, but it is laborious in terms of production and cost.

The prior art of the above patents cannot escape the current dilemma of using a ceramic pedestal package, which not only has high product cost and unstable supply, but also the thermal stress problem caused by the sandwich-like package structure cannot be effectively solved.

In view of the above problems, the main object of the present invention is to provide a wafer-level package structure of a through-hole vibrator device, which is suitable for the current use of a ceramic pedestal package, which has reduced product cost and stable supply, and improves the sandwich package structure. The thermal stress problem is solved by the through-hole connection method, so that the process can be batch-produced and the whole package can be completed on the wafer; at the same time, the precious metal material material is further reduced in size and the length of the connection line is reduced, thereby reducing the high frequency. Derived parasitic capacitance/inductance effect.

Therefore, in order to achieve the above object, a wafer-level package structure of a through-hole type oscillator device disclosed in the present invention includes a vibrator unit, an upper cover, a base, a package ring, and a metal via hole, and the vibrator unit is disposed on the base. The package ring is disposed on the outer edge of the base, and the upper cover is disposed to cover the vibrator unit and is hermetically sealed, and the metal through hole vertically penetrates the base and is electrically connected to the vibrator unit to provide signal output of the vibrator unit. /Input. Therefore, by vertically penetrating the metal vias, the length of the connection lines is reduced, thereby reducing parasitic capacitance/inductance effects due to high frequency. Meanwhile, wafers of quartz crystal oscillators can be batch-produced by wafer bonding technology. Level packaging, reducing labor and production time, and reducing production costs.

In order to further understand the purpose, features and functions of the present invention, the drawings are described in detail as follows:

According to the wafer-level package structure of the through-hole vibrator device disclosed in the present invention, first, referring to FIG. 1 , a schematic diagram of a first embodiment of a wafer-level package structure of a through-hole vibrator device according to the present invention is shown.

The wafer-level package structure of the via-type vibrator device according to the present invention comprises a vibrator unit 20, an upper cover 10, a susceptor 40, a package ring 30 and a metal via 50. The vibrator unit 20 can be a temperature stable chamfer (AT- Cut) a quartz crystal vibrator such as a quartz crystal vibrator or a tuning fork quartz crystal vibrator or other mechanical resonance type vibrator, and the upper surface and the lower surface of the vibrator unit 20 have an upper surface electrode 21 and a lower surface electrode 22, respectively (see FIG. 2). The vibrator unit 20 is excited and electrically connected to the base metal pad 41 of the bottom base 40 through the conductive bumps 23. The upper surface electrode 21 and the lower surface electrode 22 are respectively located on opposite sides of the vibrator unit 20, and the conductive bumps 23 may be conductive rubber materials or metal bumps composed of silver powder particles and resin, wherein the metal bumps may be gold or copper. One of tin, silver, indium or one of its alloys.

Therefore, the vibrator unit 20 is disposed on the base 40, and the outer edge of the base 40 is provided with a package ring 30. The package ring 30 can be made of copper, tin, gold, silver, indium, and an alloy of the above metals, an organic polymer. It is made of materials such as oxides. The package ring 30 is provided for providing the upper cover 10, and the upper cover 10 has a recess 11 for accommodating the vibrator unit 20. Therefore, the upper cover 10 and the base 40 are transmitted through the sealing ring 30, and the vibrator unit 20 can be hermetically sealed, and the internal environment can be vacuum or filled with nitrogen; the upper cover 10 can be made of bismuth, glass, quartz, ceramic, or metal. Materials, etc., the material of the susceptor 40 may also be non-conductive materials such as enamel, glass, quartz, ceramics, etc. Further, if the two materials (the upper cover 10 and the susceptor 40) are selected from the same material, the problem of thermal stress can be further prevented. .

The metal via hole 50 is vertically disposed through the susceptor 40 and is made of a metal conductive material such as copper, tungsten, aluminum, silver, gold, or an alloy of the above metals, and is subjected to a through silicon via (TSV) technique. forming. The metal via 50 is electrically connected to the upper surface electrode 21 and the lower surface electrode 22 of the vibrator unit 20, and is electrically connected to the pedestal metal pad 41 so as to be electrically connected to the outside to provide electrical energy. Signal input and output.

Wherein, when the encapsulation ring 30 is an alloy of copper, tin, gold, silver, indium and the above metal, it can be encapsulated by metal fusion bonding; when the encapsulation ring 30 is an organic polymer, it can be glued. The technology achieves the package; and when the package ring 30 is made of an oxidizing material such as ruthenium dioxide, the package can be achieved by anodic bonding.

On the other hand, in addition to the above-described upper surface electrode 21 and lower surface electrode 22 being located on opposite sides of the vibrator unit 20, they may be designed to be located on the same side. Please refer to FIG. 3 , which is a schematic diagram of a second embodiment of a wafer level package structure of a through-hole vibrator device according to the present invention; wherein the upper surface electrode 21 and the lower surface electrode 22 are located on the same side of the vibrator unit 20 (see section 4). Figure).

Similarly, the recess 11 of the upper cover 10 is designed to accommodate the vibrator unit 20, so that the base 40 can also be designed with a recess 42 and the upper cover 10 is designed to be flat, and the same effect can be achieved. 5A and 5B are diagrams corresponding to the first embodiment and the second embodiment, respectively.

Please refer to FIGS. 6 and 7 for a schematic view of a third embodiment of a wafer level package structure of a through-hole vibrator device according to the present invention. In the above embodiment, the metal via 50 is designed to extend under the conductive bump 23 of the vibrator unit 20; in this embodiment, the metal via 50 is designed to penetrate vertically below the package ring 30 due to the metal via. 50 is formed by the via via technology, and the via is one of the factors affecting the internal airtightness. Therefore, in the embodiment, the metal via 50 is opened in the package ring 30 by way of routing. Below, when the packaging process is performed, the factors affecting the hermeticity of the package are left, and only the bonding of the package ring 30 is left, and the internal package gas is not exchanged with the outside through the via hole. Therefore, the airtightness of the overall package structure will be more easily controlled. Of course, the change of the groove 11 and the relative position of the upper surface electrode 21 and the lower surface electrode 22 can also be changed as shown in the above embodiment (not shown).

The wafer-level package structure of the through-hole type oscillator device disclosed in the present invention electrically connects the vibrator unit to the bottom base metal pad by vertically penetrating through the metal via hole opened in the base, and therefore jumps The current use of ceramic pedestal packaging (including high product cost and unstable supply), and improve the thermal stress caused by the sandwich packaging structure; at the same time, reduce the use of precious metal materials and further miniaturization, reduce the length of the connection line To reduce the parasitic capacitance/inductance effect due to high frequency. And through the wafer bonding technology, quartz crystal oscillators can be batch-produced, reducing labor and production time and reducing production costs.

Although the present invention has been disclosed above in the foregoing embodiments, it is not intended to limit the invention. It is within the scope of the invention to be modified and modified without departing from the spirit and scope of the invention. Please refer to the attached patent application for the scope of protection defined by the present invention.

10. . . Upper cover

11. . . Groove

20. . . Vibrator unit

twenty one. . . Upper surface electrode

twenty two. . . Lower surface electrode

twenty three. . . Conductive bump

30. . . Package ring

40. . . Pedestal

41. . . Base metal pad

42. . . Groove

50. . . Metal via

1 is a schematic view showing a first embodiment of a wafer level package structure of a through-hole type vibrator device of the present invention.

2 is a schematic view showing the upper and lower electrodes of the vibrator unit in the first embodiment of the wafer level package structure of the through-hole type vibrator device of the present invention.

FIG. 3 is a schematic view showing a second embodiment of a wafer level package structure of a through-hole vibrator device according to the present invention.

4 is a schematic view showing the upper and lower electrodes of the vibrator unit in the second embodiment of the wafer level package structure of the through-hole type vibrator device of the present invention.

FIG. 5A is a schematic view showing a variation of the groove in the first embodiment of the wafer level package structure of the through-hole type vibrator device of the present invention.

FIG. 5B is a schematic view showing a variation of the groove in the second embodiment of the wafer level package structure of the through-hole type vibrator device of the present invention.

FIG. 6 is a schematic view showing a third embodiment of the wafer level package structure of the through-hole vibrator device of the present invention.

FIG. 7 is a schematic view showing the upper and lower electrodes of the vibrator unit and the package ring in the third embodiment of the wafer level package structure of the through-hole type vibrator device of the present invention.

10. . . Upper cover

11. . . Groove

20. . . Vibrator unit

twenty one. . . Upper surface electrode

twenty two. . . Lower surface electrode

twenty three. . . Conductive bump

30. . . Package ring

40. . . Pedestal

41. . . Base metal pad

50. . . Metal via

Claims (19)

A through-hole vibrator device wafer-level package structure, comprising: a vibrator unit; a base for the vibrator unit; a package ring disposed on the base; an upper cover disposed on the package ring The vibrator unit is disposed, and the vibrator unit is packaged; and at least one metal via hole is vertically disposed on the base and electrically connected to the vibrator unit to provide signal input/output. The wafer-level package structure of the through-hole vibrator device according to claim 1, wherein the vibrator unit is a quartz crystal vibrator or a mechanical resonance type vibrator. The wafer-level package structure of the through-hole vibrator device according to claim 2, wherein the quartz crystal oscillator is a temperature-stabilized angle-cutting (AT-cut) quartz crystal vibrator or a tuning-fork quartz crystal vibrator. The wafer-level package structure of the through-hole vibrator according to claim 1, wherein the upper cover is made of one of bismuth, glass, quartz, ceramic or metal material. The wafer-level package structure of the through-hole vibrator device according to claim 1, wherein the package ring is made of copper, tin, gold, silver, indium or one of the above alloys, organic polymers or oxide materials. Composition. The wafer-level package structure of the through-hole vibrator device of claim 1, wherein the vibrator unit comprises an upper surface electrode and a lower surface electrode. The wafer-level package structure of the through-hole vibrator device of claim 6, wherein the upper surface electrode and the lower surface electrode are electrically connected to the metal via hole by a conductive bump. The wafer-level package structure of the through-hole vibrator device according to claim 7, wherein the conductive bump is composed of one of a mixed conductive rubber material or a metal bump of silver powder particles and a resin. The wafer-level package structure of the through-hole vibrator device of claim 8, wherein the metal bump may be composed of one of gold, copper, tin, silver, indium or an alloy thereof. The wafer-level package structure of the through-hole vibrator device of claim 6, wherein the upper surface electrode and the lower surface electrode are disposed on the same side of the vibrator unit. The wafer-level package structure of the through-hole vibrator device of claim 6, wherein the upper surface electrode and the lower surface electrode are disposed on opposite sides of the vibrator unit. The wafer-level package structure of the through-hole vibrator device of claim 1, wherein the upper cover has a recess for receiving the vibrator unit. The wafer-level package structure of the through-hole vibrator device of claim 1, wherein the base has a recess for receiving the vibrator unit. The through-hole vibrator wafer level package structure according to claim 1, wherein the metal via hole is disposed under the package ring. The through-hole vibrator wafer level package structure according to claim 1, wherein the metal via hole is selected from the group consisting of copper, silver, gold, tungsten, or alloys thereof. The through-hole vibrator wafer level package structure according to claim 1, wherein the metal via hole is formed by a via via technology. The wafer-level package structure of the through-hole vibrator device of claim 1, wherein the pedestal is composed of one of bismuth, glass, quartz or ceramic materials. The wafer-level package structure of the through-hole vibrator device according to claim 1, wherein the upper cover and the base are made of the same material. The wafer-level package structure of the through-hole vibrator according to claim 1, wherein the bottom of the base further comprises a base metal pad for electrically connecting to the metal via.