JP2006279872A - Piezoelectric vibrator, manufacturing method therefor, and manufacturing method of piezoelectric oscillator using the piezoelectric vibrator - Google Patents

Piezoelectric vibrator, manufacturing method therefor, and manufacturing method of piezoelectric oscillator using the piezoelectric vibrator Download PDF

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JP2006279872A
JP2006279872A JP2005099796A JP2005099796A JP2006279872A JP 2006279872 A JP2006279872 A JP 2006279872A JP 2005099796 A JP2005099796 A JP 2005099796A JP 2005099796 A JP2005099796 A JP 2005099796A JP 2006279872 A JP2006279872 A JP 2006279872A
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substrate
piezoelectric
silicon
piezoelectric vibrator
sealing member
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Toshio Nakazawa
利夫 中澤
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Kyocera Crystal Device Corp
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Kyocera Crystal Device Corp
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<P>PROBLEM TO BE SOLVED: To provide a piezoelectric vibrator which can simplify the assembling process and can make improve the productivity. <P>SOLUTION: In this piezoelectric vibrator, the upper surface of a support substrate and a cover member are bonded so that a sealing space is formed between both by sealing components, and a piezoelectric vibrating element is accommodated in the sealing space. The support substrate is formed of a silicon substrate. In the silicon substrate, penetration wirings are formed. On a periphery region of the silicon substrate, a conductor pattern for sealing is formed. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、携帯用通信機器等の電子機器に用いられる圧電振動子に関するものである。   The present invention relates to a piezoelectric vibrator used in an electronic device such as a portable communication device.

従来より圧電素板の両主面に電極を形成した圧電振動素子をパッケージ内部に搭載した、例えば、圧電振動子や、圧電振動子と発振回路とを同一のパッケージ内に搭載した圧電発振器、あるいは、特定の周波数帯を分離する圧電フィルタ等の圧電デバイスが、携帯用通信機器や電子計算機等の電子機器に多用されている。そして近年、上面実装に対応した形状の圧電デバイスが開発され、電子機器の小型化に伴って、これらの圧電デバイスも小型化が進められている。   Conventionally, a piezoelectric vibration element in which electrodes are formed on both main surfaces of a piezoelectric element plate is mounted inside a package, for example, a piezoelectric vibrator, a piezoelectric oscillator in which a piezoelectric vibrator and an oscillation circuit are mounted in the same package, or Piezoelectric devices such as piezoelectric filters that separate specific frequency bands are often used in electronic devices such as portable communication devices and electronic computers. In recent years, piezoelectric devices having a shape corresponding to the top mounting have been developed, and these piezoelectric devices are also being miniaturized as electronic devices are miniaturized.

かかる従来の圧電デバイスの一例としては、圧電材として水晶を使用した水晶振動子を示す。容器体21の凹部空間内底面には、一対の素子接続用電極パッドが設けられている。この素子接続用電極パッド上には、導電性接着材を介して電気的に接続される一対の励振電極を表裏主面に有した水晶振動素子22が搭載されており、この水晶振動素子22を囲繞する容器体21の側壁頂部にはシールリング23が取着されている。
このシールリング23の上に金属製の蓋体24を被せ、シーム溶接等でシールリング23と蓋体24とを接合することにより、水晶振動素子22の搭載空間(凹部空間)を気密封止した水晶振動子である。(例えば、下記特許文献1を参照。)
As an example of such a conventional piezoelectric device, a crystal resonator using quartz as a piezoelectric material is shown. A pair of element connection electrode pads are provided on the bottom surface of the container body 21 in the recessed space. On this element connection electrode pad, there is mounted a crystal resonator element 22 having a pair of excitation electrodes electrically connected via a conductive adhesive on the front and back main surfaces. A seal ring 23 is attached to the top of the side wall of the surrounding container body 21.
A metal lid 24 is placed on the seal ring 23, and the seal ring 23 and the lid 24 are joined by seam welding or the like, thereby hermetically sealing the mounting space (recessed space) of the crystal resonator element 22. It is a crystal resonator. (For example, see Patent Document 1 below.)

かかる水晶振動子は、容器体21の下面に設けられる入出力端子並びにグランド端子等の外部端子25を介して水晶振動素子22の励振電極間に外部からの変動電圧が印加されると、水晶振動素子22の特性に応じた所定の周波数で厚みすべり振動を起こすようになっており、その共振周波数に基づいて外部の発振回路で所定周波数の基準信号が発振・出力される。このような基準信号は携帯用通信機器等の電子機器におけるクロック信号として利用されることとなる。 When such a crystal resonator is applied with a variable voltage from the outside between the excitation electrodes of the crystal resonator element 22 via an input / output terminal provided on the lower surface of the container body 21 and an external terminal 25 such as a ground terminal, the crystal oscillator Thickness shear vibration is caused at a predetermined frequency corresponding to the characteristics of the element 22, and a reference signal having a predetermined frequency is oscillated and output by an external oscillation circuit based on the resonance frequency. Such a reference signal is used as a clock signal in an electronic device such as a portable communication device.

前述のような水晶振動子等を含む圧電デバイスについては、以下のような文献が開示されている。
特開2001−274649号公報 特開2004−236183号公報
The following documents are disclosed about the piezoelectric device including the above-described crystal resonator and the like.
JP 2001-274649 A JP 2004-236183 A

尚、出願人は、前記した先行技術文献情報で特定される先行技術文献以外には、本発明に関連する先行技術文献を本件出願時までに発見するに到らなかった。 In addition, the applicant did not come to discover prior art documents related to the present invention by the time of filing of the present application other than the prior art documents specified by the above prior art document information.

しかしながら、上述した従来の水晶振動子においては、その組み立てに先立って、大型の母基板を分割することにより容器体21を得ておく必要があり、前記容器体21をそれぞれ別個の分割工程で得るようにしていたことから、水晶振動子の組み立て工程が煩雑なものとなり、生産性の向上に供しないという欠点を有していた。   However, in the above-described conventional crystal resonator, it is necessary to obtain a container body 21 by dividing a large mother substrate prior to its assembly, and the container bodies 21 are obtained in separate dividing steps. As a result, the assembling process of the crystal unit becomes complicated, and there is a disadvantage that the productivity is not improved.

また上述したように、容器体21と蓋体24とを事前に準備してから水晶振動子を組み立てる場合、複数個の容器体21を個々にキャリアに保持させるための作業が必要となり、これによっても水晶振動子の組み立て工程が煩雑なものとなる欠点を有していた。   As described above, when the crystal unit is assembled after the container body 21 and the lid body 24 are prepared in advance, an operation for holding the plurality of container bodies 21 individually on the carrier is required. However, there is a drawback that the assembly process of the crystal resonator becomes complicated.

また更に、上述したように前記母基板にそれぞれに基板領域を設けるとともに、前記基板領域に前記水晶振動素子を搭載するが、搭載パッドの位置精度が低い為、前記圧電振動素子を搭載する際には、それぞれの基板領域の搭載パッドを認識する必要があるので、生産性が低下してしまうという欠点があった。   Furthermore, as described above, each of the mother substrates is provided with a substrate region, and the crystal resonator element is mounted on the substrate region. However, when mounting the piezoelectric resonator element because the mounting pad has low positional accuracy. However, since it is necessary to recognize the mounting pads of each substrate area, there is a disadvantage that productivity is lowered.

更にまた、上述したように前記母基板は、ダイシング法を用いて分割するがセラミック基板にて構成されているので、切断するのが非常に困難であるという欠点があった。   Furthermore, as described above, the mother substrate is divided using a dicing method, but is formed of a ceramic substrate, so that there is a drawback that it is very difficult to cut.

本発明は上述の欠点に鑑み案出されたもので、その目的は、組み立て工程を簡略化して生産性を向上させることができる圧電振動子を提供することにある。   The present invention has been devised in view of the above-described drawbacks, and an object of the present invention is to provide a piezoelectric vibrator capable of simplifying an assembly process and improving productivity.

本発明の圧電振動子は、支持基板の上面とカバー部材とを、封止部材で両者間に封止空間を形成するように接合し、前記封止空間内に圧電振動素子を収容してなる圧電振動子において、前記支持基板をシリコン基板によって形成するとともに、前記シリコン基板には、貫通配線が設けられ、シリコン基板の外周領域には、封止する為の導体パターンが形成されていることを特徴とするものである。   The piezoelectric vibrator of the present invention is formed by joining an upper surface of a support substrate and a cover member with a sealing member so as to form a sealing space therebetween, and housing the piezoelectric vibration element in the sealing space. In the piezoelectric vibrator, the support substrate is formed of a silicon substrate, a through wiring is provided in the silicon substrate, and a conductive pattern for sealing is formed in an outer peripheral region of the silicon substrate. It is a feature.

また本発明の圧電振動子は、前記カバー部材に凹部が形成されていることを特徴とするものである。   The piezoelectric vibrator of the present invention is characterized in that a recess is formed in the cover member.

更に本発明の圧電振動子は、前記封止部材がロウ材から成ることを特徴とするものである。   Furthermore, the piezoelectric vibrator of the present invention is characterized in that the sealing member is made of a brazing material.

また更に本発明の圧電振動子は、前記封止部材と前記圧電振動素子を接続する為の導電性接着材及び貫通配線の充填導体とが同一の金属材料から成ることを特徴とするものである。   Furthermore, the piezoelectric vibrator of the present invention is characterized in that the conductive adhesive for connecting the sealing member and the piezoelectric vibration element and the filling conductor of the through wiring are made of the same metal material. .

更にまた本発明の圧電振動子は、前記封止部材が金属材料により形成されるとともに、該封止部材を支持基板下面のグランド端子に電気的に接続したことを特徴とするものである。   Furthermore, the piezoelectric vibrator of the present invention is characterized in that the sealing member is formed of a metal material, and the sealing member is electrically connected to a ground terminal on the lower surface of the support substrate.

また更に本発明の圧電振動子の製造方法は、複数の基板領域を縦横に有してなるシリコン母基板のウエハ上で、各基板領域に圧電振動素子を搭載する工程と、複数の基板領域を有するシリコン母基板のウエハ上に、カバー部材を前記圧電振動素子を気密封止する封止部材を介して接合することで集合圧電振動子を形成する工程と、前記集合圧電振動子を切断して複数の圧電振動子を得る工程と、を含むものである。   Furthermore, the method for manufacturing a piezoelectric vibrator according to the present invention includes a step of mounting a piezoelectric vibration element on each substrate region on a silicon mother substrate having a plurality of substrate regions vertically and horizontally, and a plurality of substrate regions. Forming a collective piezoelectric vibrator by bonding a cover member onto a wafer of a silicon mother substrate having a sealing member that hermetically seals the piezoelectric vibrator, and cutting the collective piezoelectric vibrator. Obtaining a plurality of piezoelectric vibrators.

更にまた本発明の圧電発振器の製造方法は、複数の基板領域を縦横に有してなる第1のシリコン母基板のウエハ上で、各基板領域に圧電振動素子を搭載する工程と、複数の基板領域を有する第1のシリコン母基板のウエハ上に、カバー部材を前記圧電振動素子を気密封止する封止部材を介して接合することで集合圧電振動子を形成する工程と、複数の基板領域を縦横に有してなる第2のシリコン母基板のウエハ上では、発振用IC及び、前記第1のシリコン母基板と接続する為のスペーサ部材を搭載する工程と、前記第1のシリコン母基板と前記第2のシリコン母基板とを導電性接合材にて接合し、集合圧電発振器を形成し、前記集合圧電発振器を切断して複数の圧電発振器を得る工程と、を含むものである。   Furthermore, the method for manufacturing a piezoelectric oscillator according to the present invention includes a step of mounting a piezoelectric vibration element on each substrate region on a first silicon mother substrate having a plurality of substrate regions vertically and horizontally, and a plurality of substrates. Forming a collective piezoelectric vibrator by bonding a cover member onto a wafer of a first silicon mother substrate having a region through a sealing member that hermetically seals the piezoelectric vibration element; and a plurality of substrate regions A step of mounting an oscillation IC and a spacer member for connecting to the first silicon mother substrate on the wafer of the second silicon mother substrate having vertical and horizontal dimensions; and the first silicon mother substrate And a second silicon mother substrate are joined with a conductive bonding material to form a collective piezoelectric oscillator, and the collective piezoelectric oscillator is cut to obtain a plurality of piezoelectric oscillators.

本発明の圧電振動子によれば、前記支持基板をシリコン基板によって形成するとともに、前記シリコン基板には、貫通配線が設けられ、シリコン基板の外周領域には、封止する為の導体パターンが形成されていることによって、気密封止がよく、低背化することが可能となる。   According to the piezoelectric vibrator of the present invention, the support substrate is formed of a silicon substrate, the silicon substrate is provided with a through wiring, and a conductive pattern for sealing is formed in the outer peripheral region of the silicon substrate. As a result, hermetic sealing is good and the height can be reduced.

更に本発明の圧電振動子によれば、前記封止部材がロウ材から成ることによって、支持基板とカバー部材との接合強度を高くすることができ、支持基板及びカバー部材間の熱応力に起因した封止部や接続部の破損等が有効に防止されるようになり、圧電発振器の生産性、信頼性を向上させることが可能となる。   Furthermore, according to the piezoelectric vibrator of the present invention, since the sealing member is made of a brazing material, it is possible to increase the bonding strength between the support substrate and the cover member, resulting from thermal stress between the support substrate and the cover member. As a result, breakage of the sealed portion and the connecting portion can be effectively prevented, and the productivity and reliability of the piezoelectric oscillator can be improved.

また更に本発明の圧電振動子によれば、前記封止部材と前記圧電振動素子を接続する為の導電性接着材及び貫通配線の充填導体とが同一の金属材料から成ることによって、充填導体が析出した場合でも、封止部材と同一の金属の為に、封止接合する際に影響が少なく、接続強度を維持することが可能となる。   Still further, according to the piezoelectric vibrator of the present invention, the conductive conductor for connecting the sealing member and the piezoelectric vibration element and the filling conductor of the through wiring are made of the same metal material, so that the filling conductor is Even when deposited, because of the same metal as the sealing member, there is little influence when sealing and joining, and the connection strength can be maintained.

更にまた本発明の圧電振動子の製造方法によれば、前記封止部材が金属材料により形成されるとともに、該封止部材を支持基板下面のグランド端子に電気的に接続することによって、圧電デバイスの使用時、圧電振動素子が収容されている封止空間がグランド電位に保持された封止部材で取り囲まれた形となることから、封止空間内に侵入しようとする外部からのノイズの一部を前記封止部材でもって遮蔽し、封止空間内の圧電振動素子をより安定して動作させることができるようになる。なお、封止部材は、支持基板を構成する複数の絶縁層の層間に形成された配線パターンやシリコン基板を貫くように形成された貫通配線などを介して、グランド端子に電気的に接続されておけば良い。   Furthermore, according to the method for manufacturing a piezoelectric vibrator of the present invention, the sealing member is formed of a metal material, and the sealing member is electrically connected to the ground terminal on the lower surface of the support substrate, whereby a piezoelectric device is obtained. Since the sealing space in which the piezoelectric vibration element is accommodated is surrounded by a sealing member that is held at the ground potential, one of the external noises that try to enter the sealing space. The portion is shielded by the sealing member, and the piezoelectric vibration element in the sealed space can be operated more stably. The sealing member is electrically connected to the ground terminal via a wiring pattern formed between a plurality of insulating layers constituting the support substrate, a through wiring formed so as to penetrate the silicon substrate, or the like. It ’s fine.

また更に本発明の圧電振動子の製造方法によれば、複数の基板領域を縦横に有してなるシリコン母基板を上で、各基板領域に圧電振動素子を搭載することによって、気密封止することができるとともに、従来のセラミックパッケージと比較すると、搭載パッドの位置精度が向上することによって、前記圧電振動素子を搭載する際に、前記圧電振動素子を搭載する際には、それぞれの基板領域の搭載パッドを認識する必要がなく、前記圧電振動素子を複数個同時に、搭載することができるので、生産性を向上することが可能となる。   Furthermore, according to the method for manufacturing a piezoelectric vibrator of the present invention, hermetic sealing is performed by mounting a piezoelectric vibration element on each substrate region on a silicon mother substrate having a plurality of substrate regions vertically and horizontally. In addition, since the positional accuracy of the mounting pad is improved as compared with the conventional ceramic package, when mounting the piezoelectric vibrating element, when mounting the piezoelectric vibrating element, Since it is not necessary to recognize mounting pads and a plurality of the piezoelectric vibration elements can be mounted simultaneously, productivity can be improved.

また、母基板がシリコンにより形成されているので、非常にダイシングしやすいので、生産性を向上させることが可能となる。   Further, since the mother substrate is made of silicon, it is very easy to dice, so that productivity can be improved.

前記第1のシリコン母基板と前記第2のシリコン母基板とを導電性接合材にて接合し、集合圧電発振器を形成し、前記集合圧電発振器を切断することによって、一括的に圧電発振器を形成することができる為、生産性を向上させることが可能となる。   Bonding the first silicon mother substrate and the second silicon mother substrate with a conductive bonding material to form a collective piezoelectric oscillator, and cutting the collective piezoelectric oscillator to form a piezoelectric oscillator collectively Therefore, productivity can be improved.

加えてシリコン母基板を用いることにより、配線パターンの寸法精度が高いので、シート状のマスターカバー部材を使用しても各基板領域の封止用導体のずれ量が少ないので、マスターカバー部材の封止部材と前記封止用導体とがずれて接合することがないので、安定して封止することができる。
また、2枚の母基板を重ねあわせて発振器などを構成しても、母基板の搭載パッドや外部端子電極等の配線パターンのずれ量が少ない為、母基板間での接続が安定して行える。
更に母基板が発振用ICと同様の材質の為、ダイシングがしやすくなるので、ダイサーの磨耗度を抑えることができ、生産性を向上させることが可能となる。例えば母基板上にマトリックス状に複数個の容器を形成した場合のダイシング処理が容易になりやすい。
In addition, since the dimensional accuracy of the wiring pattern is high by using the silicon mother board, even if a sheet-like master cover member is used, the amount of shift of the sealing conductor in each substrate region is small. Since the stop member and the sealing conductor are not shifted and joined, the sealing can be stably performed.
Even if two oscillators are stacked together to form an oscillator, etc., the amount of displacement of the wiring pattern such as the mounting pads and external terminal electrodes on the motherboard is small, so the connection between the motherboards can be performed stably. .
Further, since the mother substrate is made of the same material as that of the oscillation IC, dicing is easy, so that the degree of wear of the dicer can be suppressed and the productivity can be improved. For example, when a plurality of containers are formed in a matrix on the mother substrate, the dicing process tends to be easy.

以下、本発明を添付図面に基づいて詳細に説明する。
図1は本発明の一実施形態に係る圧電振動子を上面実装型の水晶振動子に適用した例を示す分解斜視図、図2は図1の水晶発振器の断面図である。
これらの図に示す水晶振動子は、大略的に、支持基板1と、カバー部材2と、圧電振動素子としての水晶振動素子3とで構成されている。
Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is an exploded perspective view showing an example in which a piezoelectric vibrator according to an embodiment of the present invention is applied to a top-mounted crystal vibrator, and FIG. 2 is a cross-sectional view of the crystal oscillator of FIG.
The crystal resonators shown in these drawings are generally composed of a support substrate 1, a cover member 2, and a crystal resonator element 3 as a piezoelectric resonator element.

支持基板1は、例えば、シリコン4、絶縁層5、貫通配線6並びに配線パターンから形成されている。シリコン(Si)4の上面に絶縁層(SiO)5が形成されているシリコン基板に貫通配線6を設け、上面と下面を導通接続させている。前記貫通配線6は、貫通孔に金錫(Au−Sn)等の導体ペーストを充填することによって形成することができる。また、前記シリコン基板の上面及び下面には、配線パターンが設けられている。支持基板1の上面には、封止用導体7と前記水晶振動素子3を搭載する為の搭載パッド9が設けられている。また、支持基板1の下面には複数個の外部端子電極8が設けられている。本実施形態においては支持基板1の下面四隅に配される4個の外部端子電極8が設けられており、それぞれ電源電圧端子、グランド端子、発振出力端子、発振制御端子として機能する。これらの外部端子電極8は、水晶発振器をマザーボード(図示せず)等の外部電気回路に搭載する際、半田付け等によって外部電気回路の回路配線と電気的に接続されることとなる。 The support substrate 1 is formed of, for example, silicon 4, an insulating layer 5, a through wiring 6, and a wiring pattern. A through wiring 6 is provided on a silicon substrate on which an insulating layer (SiO 2 ) 5 is formed on the upper surface of silicon (Si) 4, and the upper surface and the lower surface are electrically connected. The through wiring 6 can be formed by filling a through hole with a conductive paste such as gold tin (Au—Sn). In addition, wiring patterns are provided on the upper and lower surfaces of the silicon substrate. On the upper surface of the support substrate 1, a mounting pad 9 for mounting the sealing conductor 7 and the crystal resonator element 3 is provided. A plurality of external terminal electrodes 8 are provided on the lower surface of the support substrate 1. In the present embodiment, four external terminal electrodes 8 are provided at the four corners of the lower surface of the support substrate 1 and function as a power supply voltage terminal, a ground terminal, an oscillation output terminal, and an oscillation control terminal, respectively. These external terminal electrodes 8 are electrically connected to circuit wiring of the external electric circuit by soldering or the like when the crystal oscillator is mounted on an external electric circuit such as a mother board (not shown).

また、水晶振動素子3は、支持基板1の上面側に設けられる搭載パッド9に水晶振動素子3の対応する励振電極が導電性接着剤10を介して電気的に接続されている。
前記水晶振動素子3は、所定の結晶軸でカットした水晶片の両主面に一対の励振電極を被着・形成してなり、外部からの変動電圧が一対の振動電極を介して水晶片に印加されると、所定の周波数で厚みすべり振動を起こすようになっている。
In the crystal resonator element 3, the excitation electrode corresponding to the crystal resonator element 3 is electrically connected to the mounting pad 9 provided on the upper surface side of the support substrate 1 through the conductive adhesive 10.
The crystal resonator element 3 is formed by attaching and forming a pair of excitation electrodes on both main surfaces of a crystal piece cut along a predetermined crystal axis, and a fluctuation voltage from the outside is applied to the crystal piece via the pair of vibration electrodes. When applied, thickness shear vibration is caused at a predetermined frequency.

カバー部材2には、凹部が形成されており、前記カバー部材2と支持基板1との間で封止空間11が形成されている。前記カバー部材2と支持基板1は、封止部材12によって、支持基板1の封止用導体7と前記カバー部材2が接合されることによって、気密封止されている。
前記カバー部材2の側壁が支持基板1の封止用導体7に沿って外側に折り曲げられており、該折り曲げ部にわたってカバー部材2と支持基板1とがロウ付けされているので、カバー部材2と支持基板1との接合部の面積が増加し、カバー部材2と支持基板1との接合強度が向上すると共に、気密性も向上する。
A concave portion is formed in the cover member 2, and a sealing space 11 is formed between the cover member 2 and the support substrate 1. The cover member 2 and the support substrate 1 are hermetically sealed by the sealing member 12 joining the sealing conductor 7 of the support substrate 1 and the cover member 2.
The side wall of the cover member 2 is bent outward along the sealing conductor 7 of the support substrate 1, and the cover member 2 and the support substrate 1 are brazed across the bent portion. The area of the joint portion with the support substrate 1 increases, the joint strength between the cover member 2 and the support substrate 1 is improved, and the airtightness is also improved.

また前記封止部材12としては、例えば、AuやAu−Sn合金、半田等の金属から成るロウ材が好適に用いられ、封止部材12は支持基板1の配線導体等を介して支持基板下面のグランド端子と電気的に接続されている。このように封止部材12をグランド端子と電気的に接続させておけば、圧電デバイスの使用時、水晶振動素子3が収容されている封止空間11がグランド電位GNDに保持された封止部材12で取り囲まれた形となることから、封止空間11内に侵入しようとする外部からのノイズの一部を封止部材12でもって遮蔽し、封止空間11内の水晶振動素子3をより安定して動作させることができる。   Further, as the sealing member 12, for example, a brazing material made of metal such as Au, Au—Sn alloy, or solder is preferably used, and the sealing member 12 is provided on the lower surface of the support substrate via the wiring conductor of the support substrate 1 or the like. Is electrically connected to the ground terminal. If the sealing member 12 is electrically connected to the ground terminal as described above, the sealing member 11 in which the crystal resonator element 3 is accommodated is held at the ground potential GND when the piezoelectric device is used. 12, a part of noise from the outside that tries to enter the sealed space 11 is shielded by the sealing member 12, and the crystal resonator element 3 in the sealed space 11 is more protected. It can be operated stably.

上述のような圧電振動子は、まず水晶振動素子3を支持基板1に搭載し、次にカバー部材2を水晶振動素子3が支持基板1の封止空間11に配置されるようにして支持基板1上に封止部材12を介して載置させ、しかる後、これをNガスやArガス等の不活性ガス雰囲気中または所定の真空度に保たれた真空中で熱処理し、封止部材12を支持基板1の上面に接合することにより組み立てられる。 In the piezoelectric vibrator as described above, the crystal resonator element 3 is first mounted on the support substrate 1, and then the cover member 2 is placed in the sealing space 11 of the support substrate 1 so that the crystal resonator element 3 is disposed in the support substrate 1. 1 is placed via a sealing member 12, and then heat-treated in an inert gas atmosphere such as N 2 gas or Ar gas or in a vacuum maintained at a predetermined degree of vacuum. It is assembled by bonding 12 to the upper surface of the support substrate 1.

ここで封止部材12をロウ材により形成しておけば、支持基板1ととの接合強度が高くなることから、支持基板1及びカバー部材2の熱応力に起因した封止部や接続部の破損等が有効に防止されるようになり、圧電デバイスの生産性、信頼性を向上させることができる。   Here, if the sealing member 12 is formed of a brazing material, the bonding strength with the support substrate 1 is increased. Therefore, the sealing portion and the connection portion due to the thermal stress of the support substrate 1 and the cover member 2 are increased. Damage and the like are effectively prevented, and the productivity and reliability of the piezoelectric device can be improved.

なお、上述した組み立て工程において支持基板1に対するカバー部材2の接合を不活性ガス雰囲気中で行うのは水晶振動素子3が収容される封止空間11内に不活性ガスを充填しておくことで水晶振動素子3等の電気的特性を安定させるためである。また、カバー部材2の接合を真空中で行う場合、水晶振動素子3の電気的特性を安定させることができるとともに、水晶振動素子3のクリスタルインピーダンスを低く抑えることができる。   In the assembly process described above, the cover member 2 is bonded to the support substrate 1 in an inert gas atmosphere by filling the sealing space 11 in which the crystal resonator element 3 is accommodated with an inert gas. This is to stabilize the electrical characteristics of the crystal resonator element 3 and the like. In addition, when the cover member 2 is joined in a vacuum, the electrical characteristics of the crystal resonator element 3 can be stabilized and the crystal impedance of the crystal resonator element 3 can be kept low.

また導電性接着剤10や封止部材12として半田を用いる場合には、フラックス等の汚染物質を用いることなく酸化膜を良好に除去するために、従来周知の水素還元方式を採用することが好ましい。   Further, when using solder as the conductive adhesive 10 or the sealing member 12, it is preferable to adopt a conventionally known hydrogen reduction method in order to remove the oxide film satisfactorily without using contaminants such as flux. .

次に、上述した水晶振動子(圧電デバイス)の製造方法について図3を用いて説明する。
(工程)
複数の基板領域を縦横に有してなるシリコン母基板13のウエハ上で、各基板領域に圧電振動素子を搭載する。
シリコン母基板13は、単結晶シリコンのインゴットを所定厚みにスライスしてシリコンウエハを形成し、前記シリコンウエハの上面及び下面に絶縁層(SiO)を被覆することで形成する。前記シリコン母基板13の各基板領域には、貫通配線6が設けられ、前記基板領域の上面及び下面とを導通接続する。前記貫通配線6は、貫通孔に金錫(Au−Sn)等の導体ペーストを充填することによって形成することができる。また、前記基板領域の上面及び下面には、配線パターンが設けられている。基板領域の上面には、封止用導体7と前記水晶振動素子3を搭載する為の搭載パッド9が設けられている。また、基板領域の下面には複数個の外部端子電極8が設けられている。
そして、図3(a)に示すように、複数の基板領域を有するシリコン母基板13上に、水晶振動素子3が搭載される。
ここで、水晶振動素子3は、一対の励振電極を各基板領域の上面に設けた対応する搭載パッド9に導電性接着材10を介して電気的に接続させることにより実装される。
Next, a manufacturing method of the above-described crystal resonator (piezoelectric device) will be described with reference to FIG.
(Process)
A piezoelectric vibration element is mounted on each substrate region on the wafer of the silicon mother substrate 13 having a plurality of substrate regions vertically and horizontally.
The silicon mother substrate 13 is formed by slicing a single crystal silicon ingot to a predetermined thickness to form a silicon wafer, and covering the upper and lower surfaces of the silicon wafer with an insulating layer (SiO 2 ). A through wiring 6 is provided in each substrate region of the silicon mother substrate 13 to electrically connect the upper surface and the lower surface of the substrate region. The through wiring 6 can be formed by filling a through hole with a conductive paste such as gold tin (Au—Sn). A wiring pattern is provided on the upper and lower surfaces of the substrate region. A mounting pad 9 for mounting the sealing conductor 7 and the crystal resonator element 3 is provided on the upper surface of the substrate region. A plurality of external terminal electrodes 8 are provided on the lower surface of the substrate region.
Then, as shown in FIG. 3A, the crystal resonator element 3 is mounted on a silicon mother substrate 13 having a plurality of substrate regions.
Here, the crystal resonator element 3 is mounted by electrically connecting a pair of excitation electrodes to a corresponding mounting pad 9 provided on the upper surface of each substrate region via a conductive adhesive material 10.

(工程)
次に、図3(b)に示す如く、前記シリコン母基板13の基板領域と1対1に対応するカバー部材2を、前記基板領域に搭載されている水晶振動素子3が封止されるようにして前記シリコン母基板上に載置する。
前記基板領域には、封止用導体7に前記カバー部材2を載置し、半導体レーザや超音波等を使用し、仮止を行う。
前記カバー部材2は、例えば、42アロイやコバール,リン青銅等の金属から成る、厚み60μm〜100μmの金属板を従来周知の板金加工にて所定形状に加工することによって製作される。
かかるカバー部材2の下面には、ニッケル(Ni)層、金錫(Au−Sn)層とからなる封止部材12が形成されている。かかる封止部材12は前記カバー部材2を支持基板1に対して接合するためのろう材層として機能するものであり、金錫の組成比率は、例えば、金80%、錫20%に設定され、その厚みは、例えば、10μm〜30μmに設定される。
また、前記カバー部材2の側壁が支持基板1の封止用導体7に沿って外側に折り曲げられており、該折り曲げ部にわたってカバー部材2と支持基板1とがロウ付けされているので、カバー部材2と支持基板1との接合部の面積が増加し、カバー部材2と支持基板1との接合強度が向上すると共に、気密性も向上する。
(Process)
Next, as shown in FIG. 3B, the cover member 2 having a one-to-one correspondence with the substrate region of the silicon mother substrate 13 is sealed with the crystal resonator element 3 mounted on the substrate region. And placing on the silicon mother substrate.
In the substrate region, the cover member 2 is placed on the sealing conductor 7 and temporarily fixed using a semiconductor laser, ultrasonic waves, or the like.
The cover member 2 is manufactured, for example, by processing a metal plate having a thickness of 60 μm to 100 μm made of metal such as 42 alloy, Kovar, phosphor bronze or the like into a predetermined shape by a conventionally known sheet metal processing.
A sealing member 12 composed of a nickel (Ni) layer and a gold tin (Au—Sn) layer is formed on the lower surface of the cover member 2. The sealing member 12 functions as a brazing material layer for bonding the cover member 2 to the support substrate 1, and the composition ratio of gold tin is set to, for example, 80% gold and 20% tin. The thickness is set to, for example, 10 μm to 30 μm.
Further, since the side wall of the cover member 2 is bent outward along the sealing conductor 7 of the support substrate 1 and the cover member 2 and the support substrate 1 are brazed across the bent portion, the cover member The area of the joint portion between the support member 1 and the support substrate 1 increases, the joint strength between the cover member 2 and the support substrate 1 is improved, and the airtightness is also improved.

このようなカバー部材2を、前記カバー部材2の内側に対応する基板領域の水晶振動素子3が配されるようにしてシリコン母基板上に載置させ、しかる後、これを例えば、ハロゲンランプの照射や300℃〜350℃の温度に保たれた加熱炉の中に入れ、前記封止部材12を高温で加熱・溶融させることによってカバー部材2が第1のシリコン母基板13に接合される。その後、一体化された第1のシリコン母基板13とカバー部材2は徐々に室温まで冷却される。
尚、上述した一連の接合工程は、窒素ガスやアルゴンガス等の不活性ガス雰囲気中若しくは、真空雰囲気中で行うのが好ましく、これによって水晶振動素子3が収納される空間には不活性ガスが充満されるため、水晶振動素子3が酸素や大気中の水分等によって腐食・劣化するのを有効に防止することができる。
(工程)
Such a cover member 2 is placed on the silicon mother substrate in such a manner that the quartz crystal resonator element 3 in the substrate region corresponding to the inside of the cover member 2 is disposed. The cover member 2 is joined to the first silicon mother substrate 13 by being placed in a heating furnace maintained at a temperature of 300 ° C. to 350 ° C. by heating and melting the sealing member 12 at a high temperature. Thereafter, the integrated first silicon mother substrate 13 and cover member 2 are gradually cooled to room temperature.
The series of bonding steps described above is preferably performed in an inert gas atmosphere such as nitrogen gas or argon gas, or in a vacuum atmosphere, so that an inert gas is contained in the space in which the crystal resonator element 3 is accommodated. Since it is filled, it is possible to effectively prevent the crystal resonator element 3 from being corroded and deteriorated by oxygen, moisture in the atmosphere, or the like.
(Process)

そして、図3(c)に示すように、得られた集合圧電振動子の第1のシリコン母基板13を、各基板領域の外周に沿ってダイサーなどで切断することで、複数の圧電振動子を得ることができる。
以上のような製造方法によれば、製造過程において第1のシリコン母基板13がキャリア部材として機能するため、別途キャリア部材を用意し、該キャリア部材に第1のシリコン母基板13を分割して得た個々の支持基板を搭載するといった煩雑な作業が一切不要となり、圧電デバイスの生産性を飛躍的に向上させることができる。
Then, as shown in FIG. 3C, a plurality of piezoelectric vibrators are obtained by cutting the first silicon mother substrate 13 of the obtained collective piezoelectric vibrator with a dicer or the like along the outer periphery of each substrate region. Can be obtained.
According to the manufacturing method as described above, since the first silicon mother substrate 13 functions as a carrier member in the manufacturing process, a separate carrier member is prepared, and the first silicon mother substrate 13 is divided into the carrier member. The troublesome work of mounting the obtained individual support substrates becomes unnecessary, and the productivity of the piezoelectric device can be dramatically improved.

次に、上述した水晶発振器(圧電発振器)の製造方法について図5を用いて説明する。
(工程)
図5(a)及び(b)に示されているように、上述した水晶振動子(圧電振動子)を作製した後、第2のシリコン母基板14のウエハ上に、発振用IC16及び、前記第1のシリコン母基板13と接続する為のスペーサ部材17を搭載する。
前記発振用IC16は、単結晶シリコン等から成る基体の下面に、周囲の温度状態を検知する感温素子(サーミスタ)、水晶振動素子3の温度特性を補償する温度補償データを格納するとともに該温度補償データに基づいて水晶振動素子の振動特性を温度変化に応じて補正する温度補償回路、該温度補償回路に接続されて所定の発振出力を生成する発振回路等の電子回路が設けられている。
前記スペーサ部材17は、その各々が銅等の金属材料を四角柱状に成形した金属ポストによって形成されており、第1のシリコン基板13に設けられた接続電極と半田付け等によって電気的及び機械的に接続されることとなる。また、スペーサ部材17は、半田等のバンプでも構わない。
Next, a manufacturing method of the above-described crystal oscillator (piezoelectric oscillator) will be described with reference to FIG.
(Process)
As shown in FIGS. 5A and 5B, after the above-described crystal resonator (piezoelectric resonator) is manufactured, the oscillation IC 16 and the above-described crystal are formed on the second silicon mother substrate 14 wafer. A spacer member 17 for connecting to the first silicon mother substrate 13 is mounted.
The oscillation IC 16 stores temperature compensation data for compensating the temperature characteristics of the temperature sensing element (thermistor) for detecting the ambient temperature state and the crystal oscillation element 3 on the lower surface of the substrate made of single crystal silicon or the like, and the temperature. There are provided electronic circuits such as a temperature compensation circuit for correcting the vibration characteristics of the crystal resonator element according to the temperature change based on the compensation data, and an oscillation circuit connected to the temperature compensation circuit to generate a predetermined oscillation output.
Each of the spacer members 17 is formed by a metal post obtained by forming a metal material such as copper into a quadrangular prism shape, and is electrically and mechanically connected to a connection electrode provided on the first silicon substrate 13 by soldering or the like. Will be connected. The spacer member 17 may be a bump such as solder.

(工程)そして、図5(c)に示すように、得られた集合圧電発振器を、各基板領域の外周に沿ってダイサーなどで切断することで、複数の圧電発振器を得ることができる。
以上のような製造方法によれば、第1のシリコン母基板13並びに第2のシリコン母基板14を一括的に接続することができるので、圧電発振器の生産性を飛躍的に向上させることができる。
(Process) Then, as shown in FIG. 5C, a plurality of piezoelectric oscillators can be obtained by cutting the obtained collective piezoelectric oscillator along the outer periphery of each substrate region with a dicer or the like.
According to the manufacturing method as described above, since the first silicon mother substrate 13 and the second silicon mother substrate 14 can be connected together, the productivity of the piezoelectric oscillator can be dramatically improved. .

なお、本発明は上述の実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更、改良等が可能である。   The present invention is not limited to the above-described embodiment, and various changes and improvements can be made without departing from the gist of the present invention.

上述した実施形態においては、個片のカバー部材を使用したが、図4に示すように分割する前のマスターカバー部材15を使用し、一括的にマスターカバー部材15と第1のシリコン母基板13を一括的に分割することによって、さらに生産性を向上することが可能となる。   In the above-described embodiment, the individual cover member is used. However, as shown in FIG. 4, the master cover member 15 before being divided is used, and the master cover member 15 and the first silicon mother substrate 13 are collectively used. It is possible to further improve productivity by dividing the batch.

また、上述した実施形態においては、圧電振動子として、水晶振動子が説明されているが、支持基板1にその他の電子素子を搭載しても、本発明には適用可能である。   In the above-described embodiment, a crystal resonator is described as a piezoelectric resonator. However, even if other electronic elements are mounted on the support substrate 1, the present invention can be applied to the present invention.

また更に上述した実施形態においては、圧電振動素子3として水晶振動素子を用いた水晶振動子を例にとって説明したが、これに代えて、圧電振動素子として弾性上面波(SAW)フィルタ等の他の圧電振動素子を用いる場合にも本発明は適用可能である。   Furthermore, in the above-described embodiment, a quartz resonator using a quartz resonator as the piezoelectric resonator 3 has been described as an example. However, instead of this, another piezoelectric surface acoustic wave (SAW) filter or the like is used as the piezoelectric resonator. The present invention can also be applied when using a piezoelectric vibration element.

本発明の一実施形態に係る圧電振動子(水晶振動子)を示す分解斜視図である。1 is an exploded perspective view showing a piezoelectric vibrator (quartz crystal vibrator) according to an embodiment of the present invention. 図1の圧電振動子(水晶振動子)の断面図である。FIG. 2 is a cross-sectional view of the piezoelectric vibrator (quartz crystal vibrator) of FIG. 1. 本発明に係る圧電振動子(水晶振動子)の製造方法を説明するための斜視図である。It is a perspective view for demonstrating the manufacturing method of the piezoelectric vibrator (crystal oscillator) which concerns on this invention. 本発明の他の実施形態を示す圧電振動子(水晶振動子)の製造方法を説明するための斜視図である。It is a perspective view for demonstrating the manufacturing method of the piezoelectric vibrator (crystal oscillator) which shows other embodiment of this invention. 本発明に係る圧電発振器(水晶発振器)の製造方法を説明するための斜視図である。It is a perspective view for demonstrating the manufacturing method of the piezoelectric oscillator (crystal oscillator) which concerns on this invention.

符号の説明Explanation of symbols

1・・・・支持基板
2・・・・カバー部材
3・・・・圧電振動素子(水晶振動素子)
4・・・・シリコン
5・・・・絶縁層
6・・・・貫通配線
7・・・・封止用導体
8・・・・外部端子電極
9・・・・搭載パッド
10・・・導電性接着剤
11・・・封止空間
12・・・封止部材
13・・・第1のシリコン母基板
14・・・第2のシリコン母基板
15・・・マスターカバー部材
16・・・発振用IC
17・・・スペーサ部材
DESCRIPTION OF SYMBOLS 1 ... Support substrate 2 ... Cover member 3 ... Piezoelectric vibration element (crystal vibration element)
4... Silicon 5... Insulating layer 6... Through wiring 7... Sealing conductor 8 ... External terminal electrode 9 ... Mounting pad 10 ... Conductivity Adhesive 11 ... Sealing space 12 ... Sealing member 13 ... First silicon mother substrate 14 ... Second silicon mother substrate 15 ... Master cover member 16 ... IC for oscillation
17 ... Spacer member

Claims (6)

支持基板の上面とカバー部材とを、封止部材で両者間に封止空間を形成するように接合し、前記封止空間内に圧電振動素子を収容してなる圧電振動子において、前記支持基板をシリコン基板によって形成するとともに、前記シリコン基板には、貫通配線が設けられ、前記シリコン基板の外周領域には、封止する為の導体パターンが形成されていることを特徴とする圧電振動子。 In the piezoelectric vibrator in which the upper surface of the support substrate and the cover member are joined with a sealing member so as to form a sealed space therebetween, and the piezoelectric vibration element is accommodated in the sealed space, the support substrate Is formed of a silicon substrate, and the silicon substrate is provided with through wiring, and a conductor pattern for sealing is formed in an outer peripheral region of the silicon substrate. 前記封止部材がロウ材から成ることを特徴とする請求項1に記載の圧電振動子。 The piezoelectric vibrator according to claim 1, wherein the sealing member is made of a brazing material. 前記封止部材と前記圧電振動素子を接続する為の導電性接着材及び貫通配線の充填導体とが同一の金属材料から成ることを特徴とする請求項1に記載の圧電振動子。 The piezoelectric vibrator according to claim 1, wherein the conductive adhesive for connecting the sealing member and the piezoelectric vibration element and the filling conductor of the through wiring are made of the same metal material. 前記封止部材が金属材料により形成されるとともに、該封止部材を支持基板下面のグランド端子に電気的に接続したことを特徴とする請求項1に記載の圧電振動子。 The piezoelectric vibrator according to claim 1, wherein the sealing member is formed of a metal material, and the sealing member is electrically connected to a ground terminal on a lower surface of the support substrate. 複数の基板領域を縦横に有してなるシリコン母基板のウエハ上で、各基板領域に圧電振動素子を搭載する工程と、
複数の基板領域を有するシリコン母基板のウエハ上に、カバー部材を前記圧電振動素子を気密封止する封止部材を介して接合することで集合圧電振動子を形成する工程と、
前記集合圧電振動子を切断して複数の圧電振動子を得る工程と、を含む圧電振動子の製造方法。
Mounting a piezoelectric vibration element on each substrate region on a wafer of a silicon mother substrate having a plurality of substrate regions vertically and horizontally;
Forming a collective piezoelectric vibrator by bonding a cover member on a silicon mother substrate wafer having a plurality of substrate regions via a sealing member that hermetically seals the piezoelectric vibration element;
Cutting the collective piezoelectric vibrator to obtain a plurality of piezoelectric vibrators.
複数の基板領域を縦横に有してなる第1のシリコン母基板のウエハ上で、各基板領域に圧電振動素子を搭載する工程と、
複数の基板領域を有する第1のシリコン母基板のウエハ上に、カバー部材を前記圧電振動素子を気密封止する封止部材を介して接合することで集合圧電振動子を形成する工程と、
複数の基板領域を縦横に有してなる第2のシリコン母基板のウエハ上では、発振用IC及び、前記第1のシリコン母基板と接続する為のスペーサ部材を搭載する工程と、
前記第1のシリコン母基板と前記第2のシリコン母基板とを導電性接合材にて接合し、集合圧電発振器を形成し、前記集合圧電発振器を切断して複数の圧電発振器を得る工程と、を含む圧電発振器の製造方法。
Mounting a piezoelectric vibration element on each substrate region on a wafer of a first silicon mother substrate having a plurality of substrate regions vertically and horizontally;
Forming a collective piezoelectric vibrator by bonding a cover member onto a wafer of a first silicon mother substrate having a plurality of substrate regions via a sealing member that hermetically seals the piezoelectric vibration element;
On the wafer of the second silicon mother substrate having a plurality of substrate regions vertically and horizontally, a step of mounting an oscillation IC and a spacer member for connecting to the first silicon mother substrate;
Bonding the first silicon mother substrate and the second silicon mother substrate with a conductive bonding material, forming a collective piezoelectric oscillator, and cutting the collective piezoelectric oscillator to obtain a plurality of piezoelectric oscillators; A method for manufacturing a piezoelectric oscillator comprising:
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