201131726 六、發明說明： 【發明所屬之技術領域】 本發明係有關-種振子m置’應用於譬如為手機、筆記型電腦、汽車 電子等各種電子產品’特別是指-種貫孔式振子裝置晶圓級封裝結構。 【先前技術】 ' 石英元件具有的壓電特性’能夠提供精準且寬廣的參考頻率、時 ‘ 脈控制、料功能與過滤雜訊等功能，此外，石英元件也能做為運動及壓 籲力等感測器’以及重要的光學元件；因此，對於電子產品而言，石英元件 扮演著舉足輕重的地位。 而針對石英振子晶體的封裝，前案提出了許多種方案，#如美國專利 公告第5030875號專利「犧牲式石英晶體支樓架」（露ificial quartz_c^tai mount)’屬於早期金屬蓋體（MetalCap)的封裝方式，整體封褒結構複雜、 體積無法縮小。美國專利公告第6545392號專利「壓電共振器之封裝結構」 (Package stmctoe for a piez〇electdc res〇nat〇〇，主要採用陶竞封裝體來封 •裝石英音又振子’並改良随基座(Package)與上蓋(Lid)結構，使得石英音 又振子具妹麵抗震性，細，韻裝體成本高且尺寸無法進—步降低。 6531807 (Piezoelectric Device) > 主要針對在不_域之_基座進行石英振子與振魏路晶片之封裝，並 利用陶£基座上之導線做電氣連接，同時振盪電路晶旨封裝，石英 振子則以上蓋做焊接封裝(seam wdding);然而，由於兩；各放在不同區 塊’且以陶究基座為封裝體，因此使得面積加大且製作成本居高不下。 又如美國專利公告第7〇9858〇號專利「壓電振盪器」（—c 201131726201131726 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a variety of electronic products such as mobile phones, notebook computers, automobile electronics, and the like, in particular, a type of through-hole vibrator device. Wafer level package structure. [Prior Art] 'The piezoelectric characteristics of quartz components' can provide accurate and wide reference frequency, time pulse control, material function and filter noise. In addition, quartz components can also be used for motion and pressure. The sensor's as well as important optical components; therefore, for electronic products, quartz components play a pivotal role. For the encapsulation of quartz crystal oscillator crystals, many proposals have been made in the previous case. #, for example, U.S. Patent No. 5030875 "Sacrificial Quartz Crystal Branch" (early quartz_c^tai mount) belongs to the early metal cover (MetalCap) The packaging method, the overall sealing structure is complex, and the volume cannot be reduced. U.S. Patent No. 6,543,392, "Packaging Structure of Piezoelectric Resonator" (Package stmctoe for a piez〇electdc res〇nat〇〇, mainly using Tao Jing package to seal quartz sound and vibrator) and improved with the base (Package) and the lid structure (Lid), so that the quartz sound and the vibrator have the shock resistance of the sister face, the fine, the rhyme body cost is high and the size can not be advanced step by step. 6531807 (Piezoelectric Device) > Mainly for the domain The _ pedestal performs the encapsulation of the quartz vibrator and the vibrating weilu chip, and uses the wires on the pedestal to make electrical connection, while the oscillating circuit is packaged, and the quartz vibrator is used for the solder wrap; however, Two; each placed in a different block' and the ceramic base is used as a package, thus making the area larger and the production cost is high. Another example is the patent "Piezoelectric Oscillator" of the US Patent No. 7,9858 ( —c 201131726
Oscillator)，主要將石英晶片與㈣電路分取随封裝體封裝後再進行 電现連接鴨作，雖可有效縮小面關題，但整體體積仍無法有效降低， 同時該封裝方式之製作成本也相對較高。 而美國專觀告帛760娜财利「辟晶雜魅」（Quartz crystal resonator) ’主要為晶圓級封裝形式，其主要將玻璃材質㈣^麵g㈣之 上蓋與下基座’與石英晶#藉崎極接合完成—三明治結構。然而，此一 三明治結構由於基材與石英之__數獨，因此當溫度變化時會造成 内部石英晶片產生誠力’使得鮮隨溫度而產生偏移現象。因此，需要 特別選擇石英“之切角與上蓋和τ基鋪料之鋪脹係數，才有辦法克 服此困難點，然而在製作上和成本上都比較費工。 上述專利之先則技術’皆無法跳脫目前採用陶竟基座封裝的齋境，不 僅產品成本高且貨鮮穩定，且三明治狀的封裝結構科致之熱應力問 題，仍舊無法有效予以解決。 【發明内容】 馨於以上關題’本發_主要目的在於提供―種貫孔式振子裝置, 圓級封裝結構’舰目前採_絲鋪裝的錄，產品成本降低且貨$ 穩定’並改善三_封鶴構_致之誠力醜，貫孔連接方式 使得製程可批次生產並在晶紅完成整體封裝；同時，減少貴金屬材料j 料與進-步微縮尺寸，減少連接線之長度，從而降低因高頻化而衍生之」 生電容/電感效應。 因此’為達上述目的’本發明簡露之—前孔式振子裝置晶圓級封 裝結構’乃包含有振子單元、上蓋、基座、封祕錢金科通孔，振子 201131726 單u於基座上，且封裝環設置於基座外緣，供上蓋設置而罩設振子單 一並將其予以氣抢封裝，而金屬導通孔垂直貫穿基座並與振子單元電性 ' 提供振子單元之訊號輸出/輸入。故，藉由金屬導通孔垂直貫穿設 置減少連接線之長度，從而降低因高頻化而衍生的寄生電容/電感效應； •肖時’藉由晶31接合技術可批次生產石英晶體振子之晶圓級封裝，減少人 _ 力與生產時間，降低生產成本。 為使對本發明之目的、特徵及其功能有進一步的了解兹配合圖式詳 •細說明如下： 【實施方式】 根據本發明所揭露之貫孔式振子I置晶圓級封裝結構，首先請參閱第！ 圖’為本發明貫孔式振子裝置·級封裝結構第-實關之示意圖。 根據本發騎縣之貫孔式振子裝置顯級封裝結構包含有振子單元 2〇、上蓋1〇、_ 40、封裝環30以及金屬導通孔50，振子單元20可為溫 度穩定切角(ΑΤ-cut)石英晶體振子、音又型石英晶體振子等石英晶體振子或 鲁其它機械共振型式振子’域谁2G之上、下表面分別具有上表面電極 21與下表面電極22 (見第2圖），藉以激振振子單it 20，並透過導電凸塊 23 m連接至底部基座4G之基座金屬焊墊4卜其中，上表面電㈣與下 表面電極22分別位於振子單心之相對侧，且導電凸塊B可為銀粉顆粒 與樹脂等組成之導電膠材或金屬凸塊，其中金屬凸塊可由金、銅、锡、銀、 銦或其合金之一構成。 因此’振子單元20配置於基座4〇之上，而基座4〇外緣設置有封裝環 3〇，此封裝環30可藉由鋼、錫、金、銀、銦及上述金屬之合金、有機聚合 5 201131726 物、氧化物等材質所構成。藉由封裝㈣用以提供上蓋料以封裝設置， 且上蓋K)具有_ u來容設振子單元2Q。故，上蓋⑴ '基座仙透過封 裝環3〇 ’而可祕子單元2G域密封裝，其内部環境可«空或是充填氣 亂，上蓋U)的材質可為妙、麵、石英、喊、金屬材料等，基座4〇的 材質亦可祕、捕、碎、_鱗刪，再者，繼兩者（上 蓋H)與基座40)選用相同材f，可進—步防止熱應力之問題。 金屬導通孔5〇垂直貫穿基座4Q設置，其材質可為金科電材質，链 如銅、鶴、紹、銀、金及上述金屬之合金等，並且利用料通孔（他喊 油co請a ; TSV)技術予以成型。金屬導通孔5〇上面電性連接於振子單元 20之上表面電極u與下表面電極a,並將其電性連接至基座金屬俘塾. 使其可與外舰雜連接，提供魏與峨輸人與輸出。 而其中，當封裝環30為鋼 '錫、金、銀、銦及上述金厲之合金時，可 藉由金屬融接結合的方式付縣；當雌環Μ為錢聚合物時，則可利 用膠合技術達成封裝；而當封裝❹譬如為：氧切等氧化性材料，則 可利用陽極氧化接合技術（anGdiebGnding)達成封裝。 另方面’除了上述上表面電極21與下表面電極⑴立於振子單元如 之相對側外’亦可將其設計為位於相同侧。請參閱第3冑，為本發明貫孔 式振子裝置晶_封裝結構第二實補之示意亦其情示有上表面電極 21與下表面電極22位於振子單元2〇之相同側（見第4圖）。 相同地’上蓋10之凹槽u的設計，乃是為了容設振子單元2〇，故亦 可將基座4〇設計具有凹槽42，而上蓋1〇設計為平坦，也可達到相同之效 果，如第5A、5B圖所示， 201131726 凊參閱第6、7圖，為本發明貫孔式振子裝置晶圓級封裝結構第三實施 例之示意圖。上述實施例中，金屬導通孔5〇設計位於貫穿於概略在振子單 兀20之導電凸塊23的下方；而本實施例中，將金屬導通孔％設計垂直貫 穿於封裝環3G下方，IS]金料通孔％乃是藉由料通孔技術來形成，而 夕導通孔為影響内部氣密性的因素之…因此，本實施例巾，藉由走線的 方式將金>1導通孔50開設於封裝環3G之下方，則當進行封裝製程時，影 響封蓑氣密性之因素，僅剩下封裝環3G接合的好壞，内部封裝氣體不會經 由石夕導通孔走線而與外界產生交換。因此，整體封裝結構的氣密性將更容 易獲得控制。當然，凹槽U _化、上表面_21與下表面電極22的相 對位置亦可如上述實施例、態樣般予以變化（圖中未示）。 本發明所揭露之-種貫孔式振子裝置晶圓級封裝結構，藉由垂直貫穿 開設於基朗金料通孔’來舰子單元與底部座金屬形成電性 連接’因此，跳脫目前制_基座封裝的糾（包括產品成本高且貨源 不穩疋等），並改善三明治封裝結構所導致之熱應力問題；同時，減少貴金 屬材料祕與進-步微縮尺寸，減少連接線之長度，從而降低因高頻化而 何生的寄生電容/電感效應且藉由晶圓接合技術可批次生產石英晶體振 子，減少人力與生產時間’降低生產成本。 雖然本發明以前述之實施例揭露如上，然其並非用以限定本發明。在 不脫離本發明之精神和範關，所為之更動與潤飾，均麻發明之專利保 護範圍。關於本發明所界定之保護範圍請參考所附之申請專利範圍。、 【圖式簡單說明】 201131726 第1圖為本發明貫孔式振子裝置晶圓級封裝結構第-實施例之示意圖。 第2圖為本發明貫孔式振子裝！【晶圓級織結構之第-實施例巾振子單元 上、下電極之示意圖。 第3圖為本發明貫孔式振子裝置晶圓級封裝結構第二實施例之示意圖。 第4圖為本發明貫孔式振子裝置晶圓㈣裝結構之第二實施例中振子單元 上、下電極之示意圖。 第5A圖為本發明貫孔式振子裝置晶圓級封裝結構之第—實施例中凹槽之 變化實施態樣示意圖。 第5B圖為本發日月貫孔式振子裝置晶圓級封裝結構之第二實施例中凹槽之 變化實施態樣示意圖。 第6圆為本發明貫孔式振子裝置晶01級封裝結構第三實施例之示意圖。 第7圖為本發明貫孔式振子餘晶親封裝結構之第三實施例巾振子單元 上、下電極與域環走線之示意圖。 【主要元件符號說明】 10上蓋 11 凹槽 20 振子單元 21 上表面電極 22 下表面電極 23 導電凸塊 30 封裝環 40 基座 8 201131726 41 基座金屬焊墊 42 凹槽 50 金屬導通孔Oscillator), mainly to separate the quartz wafer and (4) circuit with the package and then connect it to the duck. Although it can effectively reduce the surface problem, the overall volume can not be effectively reduced, and the manufacturing cost of the package is relatively low. Higher. The US spectator has warned that 760 Navy's "Quartz crystal resonator" is mainly in wafer-level package form, which mainly uses glass material (four) ^ surface g (four) over the top and bottom pedestal 'with quartz crystal # Completed by the Kakisaki joint - sandwich structure. However, this sandwich structure, due to the __multiplicity of the substrate and the quartz, causes the internal quartz wafer to generate a force when the temperature changes, causing the freshness to shift with temperature. Therefore, it is necessary to specially select the "cavity angle of quartz" and the spreading coefficient of the upper cover and the τ-based paving material, so that there is a way to overcome this difficulty point, but it is relatively labor-intensive in terms of production and cost. It is impossible to get rid of the current fasting of Tao Tao base package, which not only has high product cost and stable storage, but also the thermal stress problem of the sandwich-like package structure can not be effectively solved. [Summary] The problem of 'this hair' is mainly to provide a kind of perforated vibrator device, the round-level package structure 'ship is currently recorded in the silk paving, the product cost is reduced and the goods are stable' and improve the three_封鹤建_致Sincerely ugly, the through-hole connection method enables the process to be batch-produced and complete the whole package in crystal red. At the same time, the precious metal material j material and the step-by-step miniaturization size are reduced, and the length of the connection line is reduced, thereby reducing the derivation due to high frequency. The capacitance/inductance effect. Therefore, in order to achieve the above object, the present invention is a wafer-level package structure of a front-end vibrator device, which comprises a vibrator unit, an upper cover, a pedestal, and a seal hole, and a vibrator 201131726. The package ring is disposed on the outer edge of the base, and the upper cover is disposed to cover the vibrator and is squirted, and the metal through hole vertically penetrates the base and electrically connects with the vibrator unit to provide signal output of the vibrator unit/ Input. Therefore, the length of the connection line is reduced by the vertical through-hole of the metal via hole, thereby reducing the parasitic capacitance/inductance effect caused by the high frequency; • Xiao Shi's crystal production of the quartz crystal oscillator by the crystal 31 bonding technique Round packaging reduces manpower and production time and reduces production costs. In order to further understand the object, features and functions of the present invention, the following detailed description is given as follows: [Embodiment] According to the present invention, the through-hole type oscillator I is provided with a wafer level package structure, first of all, please refer to The first! Figure' is a schematic view of the through-hole vibrator device and the stage package structure of the present invention. According to the present invention, the display module of the through-hole type vibrator device of the present invention includes a vibrator unit 2A, an upper cover 1〇, a 40, a package ring 30, and a metal via 50, and the vibrator unit 20 can be a temperature stable chamfer (ΑΤ- Cut) quartz crystal vibrator, quartz crystal oscillator such as quartz crystal oscillator or other mechanical resonance type vibrator 'domain 2G upper and lower surfaces respectively have upper surface electrode 21 and lower surface electrode 22 (see Fig. 2), By exciting the vibrator unit unit 20 and connecting to the pedestal metal pad 4 of the bottom pedestal 4G through the conductive bumps 23 m, wherein the upper surface (4) and the lower surface electrode 22 are respectively located on opposite sides of the single core of the vibrator, and The conductive bump B may be a conductive paste or a metal bump composed of silver powder particles and a resin, wherein the metal bump may be composed of one of gold, copper, tin, silver, indium or an alloy thereof. Therefore, the vibrator unit 20 is disposed on the base 4〇, and the outer edge of the base 4 is provided with a package ring 3〇. The package ring 30 can be made of steel, tin, gold, silver, indium, and an alloy of the above metals. Organic Polymerization 5 201131726 Composition of materials, oxides, etc. The vibrator unit 2Q is accommodated by the package (4) for providing the upper cover material to be packaged, and the upper cover K) has _u. Therefore, the upper cover (1) 'base sen through the packing ring 3 〇 ' and the secret sub-unit 2G domain sealed, its internal environment can be « empty or filled with gas, the upper cover U) material can be wonderful, face, quartz, shout Metal materials, etc., the material of the base 4〇 can also be secret, trapped, broken, _ scale deleted, in addition, the two (the upper cover H) and the base 40) use the same material f, can further prevent thermal stress The problem. The metal through hole 5〇 is vertically disposed through the base 4Q, and the material thereof may be a metal material, such as copper, crane, sho, silver, gold, and the alloy of the above metal, and the material through hole (he shouts oil please a ; TSV) technology is shaped. The metal via 5 is electrically connected to the upper surface electrode u and the lower surface electrode a of the vibrator unit 20, and is electrically connected to the pedestal metal cap. It can be connected with the outer ship to provide Wei and Wei. Input and output. Wherein, when the encapsulation ring 30 is made of steel 'tin, gold, silver, indium and the above-mentioned alloy of gold, the metal can be combined by means of metal fusion; when the female ring is a money polymer, it can be utilized. Gluing technology achieves packaging; and when the package is, for example, an oxidizing material such as oxygen cutting, the package can be achieved by anodizing bonding technology (anGdiebGnding). On the other hand, in addition to the above-mentioned upper surface electrode 21 and lower surface electrode (1) standing on the opposite side of the vibrator unit, they may be designed to be located on the same side. Referring to FIG. 3, the second embodiment of the transistor structure of the through-hole type vibrator device of the present invention is also illustrated. The upper surface electrode 21 and the lower surface electrode 22 are located on the same side of the vibrator unit 2 (see section 4). Figure). Similarly, the design of the groove u of the upper cover 10 is for accommodating the vibrator unit 2, so that the base 4 can also be designed with a recess 42 and the upper cover 1 〇 is designed to be flat, and the same effect can be achieved. As shown in FIGS. 5A and 5B, 201131726 refers to FIGS. 6 and 7 and is a schematic view showing a third embodiment of the wafer level package structure of the through-hole vibrator device of the present invention. In the above embodiment, the metal via hole 5 is designed to penetrate under the conductive bump 23 schematically in the vibrator unit 20; in this embodiment, the metal via hole % is designed to penetrate vertically under the package ring 3G, IS] The gold material through hole % is formed by the material through hole technology, and the night conduction hole is a factor that affects the internal airtightness. Therefore, in the present embodiment, the gold > 1 through hole is formed by way of routing 50 is opened under the 3G of the package ring, when the packaging process is carried out, the factors affecting the airtightness of the sealing ring, only the bonding of the 3G of the package ring is left, and the internal package gas is not routed through the through-hole via hole. The outside world produces exchanges. Therefore, the airtightness of the overall package structure will be more easily controlled. Of course, the relative positions of the groove U _ , the upper surface _21 and the lower surface electrode 22 can also be changed as shown in the above embodiment (not shown). The wafer-level package structure of the perforated vibrator device disclosed in the present invention is electrically connected to the bottom metal by the vertical through-opening in the base material of the base material. Therefore, the current system is jumped off. _ pedestal package correction (including high product cost and unstable supply), and improve the thermal stress caused by the sandwich package structure; at the same time, reduce the precious metal material and the step-by-step miniaturization, reduce the length of the connection line, This reduces the parasitic capacitance/inductance effect due to high frequency and can be used to batch-produce quartz crystal oscillators by wafer bonding technology, reducing labor and production time and reducing production costs. Although the present invention has been disclosed above in the foregoing embodiments, it is not intended to limit the invention. Without departing from the spirit and scope of the present invention, the invention is modified and retouched, and the scope of patent protection is invented. Please refer to the attached patent application for the scope of protection defined by the present invention. Brief Description of the Drawings 201131726 Fig. 1 is a schematic view showing a first embodiment of a wafer level package structure of a through-hole type vibrator device of the present invention. Figure 2 is a through-hole vibrator of the present invention! [Grade of the wafer-level weave structure - a schematic diagram of the upper and lower electrodes of the towel vibrator unit. FIG. 3 is a schematic view showing a second embodiment of a wafer level package structure of a through-hole vibrator device according to the present invention. Fig. 4 is a schematic view showing the upper and lower electrodes of the vibrator unit in the second embodiment of the wafer (four) mounting structure of the through-hole type vibrator device of the present invention. Fig. 5A is a schematic view showing the variation of the groove in the first embodiment of the wafer level package structure of the through-hole type vibrator device of the present invention. FIG. 5B is a schematic view showing a variation of the groove in the second embodiment of the wafer-level package structure of the Japanese-Japanese through-hole vibrator device. The sixth circle is a schematic view of the third embodiment of the 01-stage package structure of the through-hole type vibrator device of the present invention. Fig. 7 is a schematic view showing the upper and lower electrodes and the domain loop of the towel vibrator unit of the third embodiment of the through-hole vibrator of the present invention. [Main component symbol description] 10 Top cover 11 Groove 20 Vibrator unit 21 Upper surface electrode 22 Lower surface electrode 23 Conductive bump 30 Package ring 40 Base 8 201131726 41 Base metal pad 42 Groove 50 Metal via hole