CN116632507A - MEMS magneto-electric coupling antenna and low-temperature packaging method thereof - Google Patents
MEMS magneto-electric coupling antenna and low-temperature packaging method thereof Download PDFInfo
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- CN116632507A CN116632507A CN202310902946.6A CN202310902946A CN116632507A CN 116632507 A CN116632507 A CN 116632507A CN 202310902946 A CN202310902946 A CN 202310902946A CN 116632507 A CN116632507 A CN 116632507A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 33
- 239000011521 glass Substances 0.000 claims abstract description 120
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 60
- 239000010703 silicon Substances 0.000 claims abstract description 60
- 229910052751 metal Inorganic materials 0.000 claims description 79
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
- B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0065—Mechanical properties
- B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention relates to an MEMS magneto-electric coupling antenna and a low-temperature packaging method thereof. The MEMS magneto-electric coupling antenna comprises a first glass sheet and a second glass sheet, wherein a high-resistance silicon wafer is bonded between the second glass sheet and the first glass sheet, a cavity is formed in the upper surface of the first glass sheet, a channel is arranged on the high-resistance silicon wafer in a penetrating mode, an MEMS resonance structure is arranged at the lower end of the channel, and the MEMS resonance structure is suspended in the cavity. The MEMS magneto-electric coupling antenna and the low-temperature packaging method thereof adopt glass-silicon-glass for bonding from top to bottom, have low bonding temperature, and solve the problem that magnetic materials are easily affected by packaging temperature.
Description
Technical Field
The invention belongs to the technical field of MEMS chip packaging, and particularly relates to an MEMS magneto-electric coupling antenna and a low-temperature packaging method thereof.
Background
The magneto-electric coupling antenna is a novel micro communication device, can realize long-distance cross-interface communication, has good penetrability for special low-frequency electromagnetic waves, and solves the problems of underwater communication concealment, cross-medium communication and the like. However, the process cost of Through Silicon Via (TSV) and glass via (TGV) adopted in the packaging of the existing MEMS magneto-electric coupling antenna is high, and the adopted metal structure can affect the electromagnetic wave propagation at the same time.
The MEMS magneto-electric coupling antenna works through mechanical resonance, and the Q value of the resonance structure can be obviously increased by vacuum packaging, so that the MEMS magneto-electric coupling antenna has stronger output signals and lower detection limit, and the sensitive resonance structure works in vacuum, so that more excellent performance can be achieved, and therefore, the vacuum packaging is adopted for ensuring the performance of the MEMS magneto-electric coupling antenna.
In addition, in the existing MEMS magneto-electric coupling antenna, the sensitive materials are piezoelectric materials and magnetostriction materials. Magnetostrictive materials have temperature and magnetic field sensitivity, and when the environmental temperature of the materials exceeds the Curie point (generally 300 ℃), the magnetostriction performance is reduced, so that the environmental temperature needs to be strictly controlled during wafer-level vacuum bonding of MEMS magneto-electric coupling antennas, and in order to reduce the interference of the environment on electromagnetic wave propagation, metal materials are avoided in the design of packaging structures.
The large-size MEMS micro-mirror chip driven based on the electromagnetic principle and the packaging structure thereof are disclosed in the publication No. CN207752230U, the large-size MEMS micro-mirror chip driven based on the electromagnetic principle is provided with more than one rotating shaft and a frame connected with the rotating shaft, the chip is provided with a first surface and a second surface which are arranged back to each other, the first surface is provided with a reflecting mirror surface, the reflecting mirror surface can deflect by taking the rotating shaft as an axis, and the second surface is provided with a soft magnetic film layer which can at least provide magnetic force for the deflection of the mirror surface in a matching way with an inductance coil; the driving mode of MEMS micro mirror deflection is realized by electroplating soft magnetic materials and combining an external power-on coil method, so that the temperature of the MEMS micro mirror is accurately controlled. However, this package structure still has the following disadvantages:
firstly, packaging is carried out in a PCB welding mode, and as the lead wire of the inductance coil is connected to the bonding pad during welding, external exciting current is input, the welding mode can increase unstable factors in a circuit, and the problems of poor welding, cold joint, oxidization and the like are easy to occur, so that the performance and reliability of the circuit are affected;
second, during packaging, gas is present between the devices and air damping reduces the output signal strength when the devices are in operation.
The packaging structure and the packaging method of the MEMS optical chip based on silicon-glass bonding disclosed in the publication No. CN1663907A adopt glass powder as a medium between silicon wafers to be bonded, the glass powder is stored for a certain time at a certain temperature after being dissolved in a chemical solvent, then a layer of glass paste is coated on the surface of the lower silicon wafer to be bonded through a screen printing or rotary coating process, and after manual or machine alignment, the bonding of the silicon wafer and the silicon wafer is completed through controlling the pressure, the temperature gradient, the bonding temperature and the time during the bonding of the silicon wafers. The package structure adopts a TGV technology when being bonded, and the electrode pad of the MEMS optical chip is directly led to the upper surface of the optical glass by utilizing the TGV technology. However, this package structure still has the following disadvantages:
the TGV technology is adopted, so that the cost is high;
the bonding temperature of silicon-glass reaches 420-430 ℃, and the bonding temperature is higher, so that the magnetostrictive material is affected.
Disclosure of Invention
In view of the above problems, the present invention aims to provide a MEMS magneto-electric coupling antenna and a low-temperature packaging method thereof, which adopt glass-silicon-glass bonding from top to bottom, have low bonding temperature, and solve the problem that magnetic materials are easily affected by packaging temperature.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
an MEMS magneto-electric coupling antenna, characterized in that: the high-resistance silicon wafer is bonded between the second glass sheet and the first glass sheet, a cavity is formed in the upper surface of the first glass sheet, a channel is arranged on the high-resistance silicon wafer in a penetrating mode, an MEMS resonance structure is arranged at the lower end of the channel, and the MEMS resonance structure is suspended in the cavity.
Further, the high-resistance silicon wafer is bonded on the upper surface of the first glass sheet at the periphery of the cavity, two ends of the channel respectively penetrate through the second glass sheet and the cavity, two sides of the channel are connected and support the MEMS resonance structure, and a titanium-based getter is sputtered on the surface of the cavity to enable the cavity to form a vacuum environment; the lower end surfaces of the high-resistance silicon wafers at the two sides of the channel and the upper surfaces of the two sides of the first glass sheet are sputtered with metal electrodes which are connected in a contact mode, and the metal electrodes are electrically connected with the MEMS resonance structure.
Further, the MEMS magneto-electricity coupling antenna further comprises a ceramic shell, shell electrodes are respectively arranged on two sides of the shell of the ceramic shell, the first glass sheet, the second glass sheet and the high-resistance silicon wafer after bonding are arranged in the ceramic shell, the first glass sheet is stuck and fixed on the inner side of the bottom of the ceramic shell, and the metal electrodes on the first glass sheet are respectively connected with the shell electrodes of the corresponding ceramic shell through lead bonding.
Further, the ceramic shell comprises a ceramic base and a ceramic end cap, the first glass sheet is adhered and fixed on the inner side of the bottom of the ceramic base through epoxy resin, the ceramic base and the ceramic end cap are sealed into a cavity structure through welding flux, and the second glass sheet and the high-resistance silicon sheet are spaced from the inner wall of the ceramic shell.
The invention also provides a low-temperature packaging method of the MEMS magneto-electric coupling antenna, which is characterized by comprising the following steps of:
step S1, photoetching and etching are carried out on the upper surface of a first glass sheet, a cavity is etched in the middle, and metal electrode grooves are etched on two sides;
step S2, photoetching the upper surface of the first glass sheet again, and preparing a third metal electrode in the metal electrode groove after sputtering gold stripping;
step S3, photoetching the cavity, and sputtering a titanium-based getter in the cavity after development;
step S4, photoetching the upper surface and the lower surface of the second glass sheet, and etching a first positioning groove on both sides of the upper surface and the lower surface of the second glass sheet;
s5, performing ICP etching on the prepared MEMS magneto-electric coupling antenna wafer, wherein second positioning grooves are etched on two sides of the lower surface of the MEMS magneto-electric coupling antenna wafer;
step S6, sequentially bonding the first glass sheet and the second glass sheet with the MEMS magneto-electric coupling antenna wafer;
s7, scribing along a first positioning groove of the second glass sheet, exposing a third metal electrode on the first glass sheet, and forming an MEMS magneto-electric coupling antenna chip;
and S8, adhering and fixing the MEMS magneto-electric coupling antenna chip in the ceramic shell, bonding a third metal electrode with a shell electrode on the ceramic shell by adopting a lead, and finally welding and sealing the ceramic shell.
Further, in the step S5, the method for manufacturing the MEMS magneto-electric coupling antenna wafer includes the following steps:
step S501, photoetching the lower surface of a high-resistance silicon wafer, and preparing a first metal electrode on the lower surface of the high-resistance silicon wafer after sputtered gold is stripped;
step S502, continuing sputtering a ZnO film on the lower surface of the high-resistance silicon wafer, then photoetching again, and performing ICP patterning to form a ZnO piezoelectric film;
step S503, carrying out photoetching on the ZnO piezoelectric film, evaporating a gold layer, and preparing a second metal electrode on the ZnO piezoelectric film through a stripping process;
step S504, sputtering a magnetostrictive film after continuing photoetching the ZnO piezoelectric film, and performing ICP patterning after a stripping process to obtain a magnetostrictive layer;
and step S505, performing ICP back cavity etching on the upper surface of the high-resistance silicon wafer to form a simply supported beam, and completing the preparation of the MEMS magneto-electric coupling antenna wafer.
Further, in the step S8, the ceramic housing includes a ceramic base and a ceramic end cap, and the housing electrode is disposed on an upper surface of the ceramic base; the lower surface of a first glass sheet of the MEMS magneto-electric coupling antenna chip is stuck and fixed on the inner side of the bottom of the ceramic base through epoxy resin, then a third metal electrode of the MEMS magneto-electric coupling antenna chip is connected with a shell electrode through wire bonding, and finally the ceramic end cap and the ceramic base are welded and sealed through solder.
Further, in the step S1, the depth of the cavity is 3 μm-5 μm, and the depth of the metal electrode groove is 100nm-200nm;
in the step S4, the thickness of the first positioning groove is 100nm-200nm, the length is 1000 μm-2000 μm, and the width is 500 μm-1000 μm;
in the step S5, the thickness of the second positioning groove is 100nm-200nm, the length is 1000 μm-2000 μm, and the width is 500 μm-1000 μm.
Further, in the step S502, the thickness of the ZnO piezoelectric film is 500nm-5 μm, the length is 100 μm-200 μm, and the width is 20 μm-100 μm;
in the step S503, the thickness of the second metal electrode is 50nm-200nm, the length is 100 μm-200 μm, and the width is 20 μm-100 μm.
In step S6, bonding the upper surface of the first glass sheet with the lower surface of the MEMS magneto-electric coupling antenna wafer, and then performing a high-temperature annealing treatment at 200 ℃ on the third metal electrode, the first metal electrode and the second metal electrode for 1 hour; and finally, bonding the lower surface of the second glass sheet with the upper surface of the MEMS magneto-electric coupling antenna wafer.
By adopting the technical scheme, the invention has the following advantages and effects:
(1) The invention provides a MEMS magneto-electric coupling antenna and a low-temperature packaging method thereof, wherein a low-temperature silicon glass bonding method is adopted, and compared with the traditional bonding technology, the low-temperature non-metal direct bonding technology has lower process temperature, and does not generate thermal stress and thermal expansion on magneto-electric materials, thereby reducing the influence on the performance of the magneto-electric materials.
(2) The MEMS magneto-electric coupling antenna and the low-temperature packaging method thereof construct the vacuum environment of the MEMS resonance mechanism by sputtering the getter, and optimize the working performance of the whole device.
(3) The low-temperature packaging method of the MEMS magneto-electric coupling antenna adopts a metal-free bonding mode, so that the interference of a metal material on electromagnetic wave propagation is reduced; the wafer level bonding technique employed is more consistent than conventional chip level bonding.
(4) The MEMS magneto-electric coupling antenna low-temperature packaging method adopts the femtosecond laser scribing technology to expose the metal electrode, and the metal electrode directly adopts ohmic contact, so that compared with the TGV technology and the TSV technology, the MEMS magneto-electric coupling antenna low-temperature packaging method adopts the femtosecond laser scribing technology to lower the cost.
Drawings
FIGS. 1 a-1 f are schematic structural views of steps of a first glass sheet manufacturing method of the present invention.
FIGS. 2 a-2 e are schematic diagrams illustrating steps of packaging a wafer for a MEMS magneto-electric coupling antenna according to the present invention.
FIGS. 3 a-3 d are schematic structural views showing steps of a second glass sheet manufacturing method according to the present invention.
Fig. 4 a-4 d are schematic structural diagrams of packaging steps of the MEMS magneto-electric coupling antenna of the present invention.
1-first glass sheet, 101-second glass sheet, 2-photoresist, 3-first metal electrode, 31-second metal electrode, 32-third metal electrode, 33-shell electrode, 4-first positioning groove, 41-second positioning groove, 5-high-resistance silicon chip, 6-MEMS resonance structure, 7-ceramic shell, 71-ceramic base, 72-ceramic end cap, 8-epoxy resin, 9-lead wire, 10-ZnO film and 11-solder.
Detailed Description
The following detailed description of the embodiments of the present invention will be provided with reference to the accompanying drawings in order to more clearly understand the objects, features and advantages of the present invention. It should be understood that the embodiments shown in the drawings are not intended to limit the scope of the invention, but rather are merely illustrative of the true spirit of the invention.
As shown in fig. 4 a-4 d. The invention provides an MEMS magneto-electric coupling antenna, which comprises a first glass sheet 1 and a second glass sheet 101, wherein a high-resistance silicon wafer 5 is bonded between the second glass sheet 101 and the first glass sheet 1, a cavity is formed in the upper surface of the first glass sheet 1, a channel is arranged on the high-resistance silicon wafer 5 in a penetrating manner, the channel penetrates through the upper surface and the lower surface of the high-resistance silicon wafer 5, an MEMS resonance structure 6 is arranged at the lower end of the channel, and the MEMS resonance structure 6 is suspended in the cavity. The cavity is a vacuum cavity.
Specifically, the first glass sheet 1 and the second glass sheet 101 are borosilicate glass, and the model is preferably BF33. The cavity on the upper surface of the first glass sheet 1 is formed by adopting a photoetching mode. The cavity is etched to a depth of 3 μm-5 μm and is used to accommodate the MEMS resonant structure 6.
Further, the high-resistance silicon wafer 5 is bonded on the upper surface of the first glass sheet 1 at the periphery of the cavity, two ends of the channel respectively penetrate through the second glass sheet 101 and the cavity, two sides of the channel are connected and support the MEMS resonance structure 6, and a titanium-based getter is sputtered on the surface of the cavity to enable the cavity to form a vacuum environment; the lower end surfaces of the high-resistance silicon wafers 5 on the two sides of the channel and the upper surfaces of the two sides of the first glass sheet 1 are sputtered with metal electrodes which are connected in a contact mode, and the metal electrodes are electrically connected with the MEMS resonance structure 6.
Specifically, the upper and lower surfaces of the high-resistance silicon wafer 5 are etched by photolithography to form a through channel, the lower end of the channel is etched by photolithography to form an MEMS resonance structure 6, two ends of the MEMS resonance structure 6 form a simply supported beam structure to be supported, and an electroplated metal electrode on the simply supported beam is electrically connected with the MEMS resonance structure 6. The channel is communicated with a cavity on the first glass sheet 1, and the inner diameter of the cavity is larger than that of the channel. The second glass sheet 101, the high-resistance silicon wafer 5 and the first glass sheet 1 are bonded by three layers of glass-silicon-glass to realize wafer-level bonding, and the bonded glass-silicon-glass is enclosed to form a vacuum cavity of the MEMS magneto-electric coupling antenna. And sputtering a titanium-based getter on the upper surface of the cavity, wherein the titanium-based getter enables the vacuum cavity to form a vacuum environment.
Further, the MEMS magneto-electric coupling antenna further comprises a ceramic housing 7, housing electrodes 33 are respectively arranged on two sides of the housing of the ceramic housing 7, and the housing electrodes 33 respectively penetrate through two sides inside and outside the housing of the ceramic housing 7. The first glass sheet 1, the second glass sheet 101 and the high-resistance silicon wafer 5 are all arranged in the ceramic shell 7 after bonding, the first glass sheet 1 is stuck and fixed on the inner side of the bottom of the ceramic shell 7, and metal electrodes on the first glass sheet 1 are respectively connected with shell electrodes 33 of the corresponding ceramic shell 7 through bonding wires 9.
Specifically, the metal electrodes include a first metal electrode 3, a second metal electrode 31, and a third metal electrode 32. The first metal electrode 3 is sputtered on one side of the lower surface of the high-resistance silicon wafer 5, and the first metal electrode 3 and the second metal electrode 31 form electrodes of the MEMS magneto-electric coupling antenna at the same time. The first metal electrode 3 is prepared by performing photoetching development on the surface of the high-resistance silicon wafer 5, sputtering a gold layer with the thickness of 50-200 nm on the high-resistance silicon wafer 5, and then patterning the gold layer by adopting a stripping process. The second metal electrode 31 is sputtered on the other side of the lower surface of the high-resistance silicon wafer 5, the second metal electrode 31 is prepared by photoetching a ZnO piezoelectric film on the lower surface of the high-resistance silicon wafer 5, performing photoetching development on the ZnO piezoelectric film, evaporating a gold layer with the thickness of 50nm-200nm, the length of 100-200 mu m and the width of 20-100 mu m on the ZnO piezoelectric film, and then performing stripping process. The second metal electrode 31 and the first metal electrode 3 are respectively located at two sides of the channel of the high-resistance silicon wafer 5. The third metal electrodes 32 are respectively arranged on two sides of the upper surface of the first glass sheet 1 in a sputtering way, and the third metal electrodes 32 are prepared by photoetching metal electrode grooves with the depth of 100nm-200nm on the edges of the two sides of the upper surface of the first glass sheet 1, and sputtering gold layers with the thickness of 100nm-200nm, the length of 1000 mu m-2000 mu m and the width of 1000 mu m-2000 mu m in the metal electrode grooves.
When the high-resistance silicon wafer 5 is bonded with the first glass sheet 1, the first metal electrode 3 and the second metal electrode 31 on two sides of the high-resistance silicon wafer 5 are respectively in ohmic contact connection with the third metal electrode 32 on two sides of the first glass sheet 1. In order to enhance the effect of contact connection, the first metal electrode 3, the second metal electrode 31, and the third metal electrode 32 need to be subjected to a high temperature annealing treatment at 200 ℃ for 1 hour.
The MEMS resonant structure 6 specifically comprises: and a magnetostrictive layer is arranged on the lower surface of the high-resistance silicon wafer 5, after photoetching development is carried out on the ZnO piezoelectric film, a FeGaB magnetostrictive film with the thickness of 500nm-5 mu m is sputtered on the ZnO piezoelectric film, then the magnetostrictive layer is obtained through patterning by a stripping process, and finally ICP back cavity etching is carried out from the upper surface of the high-resistance silicon wafer 5 until a suspended simply supported beam is formed on the lower surface of the high-resistance silicon wafer 5, so that the MEMS resonant structure 6 is obtained.
The ceramic shell 7 comprises a ceramic base 71 and a ceramic end cap 72, the ceramic base 71 and the ceramic end cap 72 are of groove-shaped structures, and the upper end face and the lower end face of the ceramic base 71 and the upper end face and the lower end face of the ceramic end cap 72 are welded into a sealed cavity structure through tin-bismuth-silver solder 11 in a sealing mode. The lower surface of the first glass sheet 1 is stuck and fixed at the center of the bottom surface of the ceramic base 71 through epoxy resin 8, and the other surfaces of the first glass sheet 1, the second glass sheet 101 and the outer surface of the high-resistance silicon wafer 5 are spaced from the inner cavity surface of the ceramic shell 7. The shell electrode 33 is respectively arranged on the welding sealing surfaces of the upper end and the lower end of the two sides of the ceramic base 71 and the ceramic end cap 72, and the shell electrode 33 and the third metal electrode 32 positioned on the same side are connected by bonding through the lead 9. The lead 9 is preferably a gold wire.
The invention also provides a low-temperature packaging method of the MEMS magneto-electric coupling antenna, which comprises the following steps:
first, a MEMS magneto-electric coupling antenna wafer is prepared. Referring to fig. 2 a-2 e, the method specifically comprises the following steps:
(1) And 4 inch double-sided polished high-resistance silicon wafer 5 (resistivity > 10000 ohm/cm) is selected for preparation.
(2) As shown in fig. 2 a. And photoetching the lower surface of the high-resistance silicon wafer 5, after developing, sputtering a gold layer with the thickness of 50-200 nm on the lower surface of the high-resistance silicon wafer 5, and adopting a stripping process to pattern the gold layer to prepare a first metal electrode 3, wherein the first metal electrode 3 is used as a first electrode of the MEMS magneto-electric coupling antenna.
(3) As shown in fig. 2 b. Sputtering a layer of ZnO film 10 with c-axis orientation on the lower surface of the high-resistance silicon wafer 5 and the surface of the first metal electrode 3, photoetching the ZnO film 10, performing ICP (inductively coupled plasma) patterning to form a ZnO piezoelectric film, and performing annealing treatment on the ZnO piezoelectric film. The ZnO piezoelectric film has a thickness of 500nm-5 μm, a length of 100 μm-200 μm and a width of 20 μm-100 μm.
(4) As shown in fig. 2 c. And photoetching and developing the ZnO piezoelectric film, evaporating a gold layer with the thickness of 50nm-200nm, the length of 100-200 mu m and the width of 20-100 mu m on the ZnO piezoelectric film, and then preparing a second metal electrode 31 by a stripping process, wherein the second metal electrode 31 is used as a second electrode of the MEMS magneto-electric coupling antenna.
(5) As shown in fig. 2 d. And continuing photoetching on the ZnO piezoelectric film, after developing, sputtering a magnetostrictive film with the thickness of 500nm-5 mu m on the ZnO piezoelectric film, then patterning by a stripping process to obtain a magnetostrictive layer, and then carrying out vacuum magnetic induction annealing on the magnetostrictive layer. The sputtering material of the magnetostrictive film is FeGaB.
(6) As shown in fig. 2 e. Photoetching the upper surface of the high-resistance silicon wafer 5, forming an etching window after developing, carrying out ICP back cavity etching until the lower surface of the high-resistance silicon wafer 5 forms a suspended simply supported beam, obtaining an MEMS resonance structure 6, and completing the MEMS magneto-electric coupling antenna wafer; and (5) standby.
And secondly, carrying out low-temperature vacuum nonmetallic packaging on the MEMS magneto-electric coupling antenna wafer. Referring to fig. 1 a-1 f, 3 a-3 d and 4 a-4 d, the method specifically comprises the following steps:
(1) Two BF33 high borosilicate glass sheets are prepared and divided into a second glass sheet 101 and a first glass sheet 1 for standby, and a MEMS magneto-electric coupling antenna wafer prepared by the steps is prepared.
(2) And respectively carrying out ultrasonic soaking cleaning on the second glass sheet 101 and the first glass sheet 1 by using acetone and isopropanol to remove dirt on the surfaces of the second glass sheet 101 and the first glass sheet 1.
(3) As shown in fig. 1a, 1 b. And carrying out photoetching on the photoresist 2 spin-coated on the upper surface of the first glass sheet 1, carrying out reactive ion etching after development, and etching a cavity with the depth of 3-5 mu m in the middle of the upper surface of the first glass sheet 1, wherein the cavity is used as a resonant cavity of the MEMS resonant structure 6.
(4) As shown in fig. 1c and 1 d. And carrying out photoetching on the spin-coated photoresist 2 on the upper surface of the first glass sheet 1, carrying out reactive ion etching after development, and etching metal electrode grooves with the depth of 100-200 nm on the edges of the upper surface of the first glass sheet 1 on the two sides of the cavity.
(5) As shown in fig. 1e and 1 f. And continuing to carry out photoetching on the photoresist 2 spin-coated on the upper surface of the first glass sheet 1, sputtering gold after development, and preparing a third metal electrode 32 in the metal electrode groove by adopting a stripping process pattern. The third metal electrode 32 has a thickness of 100nm to 200nm, a length of 1000 μm to 2000 μm, and a width of 1000 μm to 2000 μm.
(6) And photoetching the cavity on the upper surface of the first glass sheet 1, and sputtering a titanium-based getter on the inner surface of the cavity after development.
(7) As shown in fig. 3a, 3 b. Photoresist 2 is spin-coated on the upper surface of the second glass sheet 101 for photoetching, and after development, reactive ion etching is carried out, and first positioning grooves 4 are etched on the edge parts of the two sides of the upper surface of the second glass sheet 101;
as shown in fig. 3c, 3 d. The photoresist 2 is spin-coated on the lower surface of the second glass sheet 101, and after development, reactive ion etching is performed, and the edge portions on both sides of the lower surface of the second glass sheet 101 are also etched with the first positioning grooves 4, where the first positioning grooves 4 on the upper and lower surfaces of the second glass sheet 101 are arranged vertically opposite to each other. Each first positioning groove 4 has a thickness of 100nm-200nm, a length of 1000 μm-2000 μm, and a width of 500 μm-1000 μm.
(8) As shown in fig. 4 a. The second positioning grooves 41 are etched on the two side edge portions of the lower surface of the MEMS magneto-electric coupling antenna wafer by adopting an ICP etching technology. The second positioning groove 41 has a thickness of 100nm-200nm, a length of 1000 μm-2000 μm, and a width of 500 μm-1000 μm.
(9) As shown in fig. 4 b. Bonding the upper surface of the first glass sheet 1 with the lower surface of the MEMS magneto-electric coupling antenna wafer;
when in bonding, the first glass sheet 1 is connected to a cathode, the high-resistance silicon wafer 5 is connected to an anode, the first glass sheet 1 and the high-resistance silicon wafer 5 are heated to 280 ℃ in a contact way, and meanwhile, the pressure of 5kpa and the voltage of-800V are applied, and the bonding time is 1 hour.
(10) The first metal electrode 3, the second metal electrode 31 and the third metal electrode 32 were subjected to high-temperature annealing treatment at 200℃for 1 hour.
(11) Bonding the lower surface of the second glass sheet 101 and the upper surface of the MEMS magneto-electric coupling antenna wafer, wherein the second positioning groove 41 and the first positioning groove 4 are ensured to be arranged oppositely up and down during bonding;
when the MEMS magneto-electric coupling antenna wafer is bonded with the second glass sheet 101, the second glass sheet 101 is connected to the cathode, the high-resistance silicon wafer 5 is connected to the anode, the second glass sheet 101 and the high-resistance silicon wafer 5 are heated to 280 ℃ in contact, and meanwhile, the bonding time is 1 hour under the pressure of about 5kpa and the voltage of-800V.
(12) As shown in fig. 4 c. Femtosecond laser scribing is carried out along the first positioning groove 4 of the second glass sheet 101, and the third metal electrode 32 of the first glass sheet 1 is exposed to form the MEMS magneto-electric coupling antenna chip.
(13) As shown in fig. 4 d. Coating epoxy resin 8 on the bottom of a first glass sheet 1 of the MEMS magneto-electric coupling antenna chip to fix the MEMS magneto-electric coupling antenna chip on a ceramic base 71 of a ceramic shell 7, separating the rest outer peripheral surface of the MEMS magneto-electric coupling antenna chip from the inner surface of the ceramic base 71, respectively bonding and connecting a third metal electrode 32 with a shell electrode 33 of the ceramic shell 7 by using a lead 9, wherein the lead 9 adopts a welding gold wire;
the ceramic end cap 72 of the ceramic case 7 is sealed to the ceramic base 71 by solder 11, and the inner peripheral surface of the ceramic end cap 72 is spaced apart from the MEMS magneto-electric coupling antenna chip. The solder 11 is preferably tin-bismuth-silver solder, the tin-bismuth-silver solder is heated to 220 ℃ during welding, the solder 11 is melted and then coated on the welding surface of the ceramic end cap 72 and the ceramic base 71, and the low-temperature vacuum nonmetallic packaging of the MEMS magneto-electric coupling antenna is completed after the solder 11 is solidified.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. An MEMS magneto-electric coupling antenna, characterized in that: including first glass piece (1) and second glass piece (101), it has high-resistance silicon chip (5) to bond between second glass piece (101) and the first glass piece (1), the upper surface of first glass piece (1) has the cavity, link up on high-resistance silicon chip (5) and be provided with the passageway, the lower extreme of passageway is provided with MEMS resonant structure (6), MEMS resonant structure (6) unsettled in the cavity.
2. A MEMS magneto-electric coupling antenna according to claim 1, wherein: the high-resistance silicon wafer (5) is bonded on the upper surface of the first glass sheet (1) at the periphery of the cavity, two ends of the channel respectively penetrate through the second glass sheet (101) and the cavity, two sides of the channel are connected and support the MEMS resonance structure (6), and titanium-based getter is sputtered on the surface of the cavity to enable the cavity to form a vacuum environment; the lower end surfaces of the high-resistance silicon wafers (5) on the two sides of the channel and the upper surfaces of the two sides of the first glass sheet (1) are sputtered with metal electrodes which are connected in a contact mode, and the metal electrodes are electrically connected with the MEMS resonance structure (6).
3. A MEMS magneto-electric coupling antenna according to claim 1 or 2, wherein: still include ceramic shell (7), the casing both sides of ceramic shell (7) are provided with casing electrode (33) respectively, after the bonding first glass piece (1), second glass piece (101) and high resistance silicon chip (5) all set up ceramic shell (7) in, first glass piece (1) paste and fix the bottom inboard of ceramic shell (7), metal electrode on first glass piece (1) is connected through lead wire (9) bonding with casing electrode (33) of corresponding ceramic shell (7) respectively.
4. A MEMS magneto-electric coupling antenna according to claim 3, wherein: the ceramic shell (7) comprises a ceramic base (71) and a ceramic end cap (72), the first glass sheet (1) is stuck and fixed on the inner side of the bottom of the ceramic base (71) through epoxy resin (8), the ceramic base (71) and the ceramic end cap (72) are welded and sealed into a cavity structure through welding flux (11), and the second glass sheet (101) and the high-resistance silicon sheet (5) are spaced from the inner wall of the ceramic shell (7).
5. A method of low temperature packaging of a MEMS magneto-electric coupling antenna according to any one of claims 1-4, comprising the steps of:
step S1, photoetching and etching are carried out on the upper surface of a first glass sheet (1), a cavity is etched in the middle, and metal electrode grooves are etched on two sides;
step S2, photoetching the upper surface of the first glass sheet (1) again, and preparing a third metal electrode (32) in the metal electrode groove after sputtered gold is stripped;
step S3, photoetching the cavity, and sputtering a titanium-based getter in the cavity after development;
step S4, photoetching the upper surface and the lower surface of the second glass sheet (101), and etching a first positioning groove (4) on both sides of the upper surface and the lower surface of the second glass sheet (101);
s5, performing ICP etching on the prepared MEMS magneto-electric coupling antenna wafer, wherein second positioning grooves (41) are etched on two sides of the lower surface of the MEMS magneto-electric coupling antenna wafer;
step S6, sequentially bonding the first glass sheet (1) and the second glass sheet (101) with the MEMS magneto-electric coupling antenna wafer;
s7, scribing along a first positioning groove (4) of the second glass sheet (101) to expose a third metal electrode (32) on the first glass sheet (1) so as to form an MEMS magneto-electric coupling antenna chip;
and S8, adhering and fixing the MEMS magneto-electric coupling antenna chip in the ceramic shell (7), bonding a third metal electrode (32) with a shell electrode (33) on the ceramic shell (7) by adopting a lead (9), and finally welding and sealing the ceramic shell (7).
6. The method for packaging the MEMS magneto-electric coupling antenna at a low temperature according to claim 5, wherein: in the step S5, the method for manufacturing the MEMS magneto-electric coupling antenna wafer includes the following steps:
step S501, photoetching the lower surface of a high-resistance silicon wafer (5), and preparing a first metal electrode (3) on the lower surface of the high-resistance silicon wafer (5) after sputtering gold to be stripped;
step S502, continuing sputtering a ZnO film (10) on the lower surface of the high-resistance silicon wafer (5), then carrying out photoetching again, and then carrying out ICP patterning to form a ZnO piezoelectric film;
step S503, carrying out photoetching on the ZnO piezoelectric film, evaporating a gold layer, and preparing a second metal electrode (31) on the ZnO piezoelectric film through a stripping process;
step S504, sputtering a magnetostrictive film after continuing photoetching the ZnO piezoelectric film, and performing ICP patterning after a stripping process to obtain a magnetostrictive layer;
and step S505, performing ICP back cavity etching on the upper surface of the high-resistance silicon wafer (5) to form a simply supported beam, and completing the preparation of the MEMS magneto-electric coupling antenna wafer.
7. The method for packaging the MEMS magneto-electric coupling antenna at a low temperature according to claim 5, wherein: in the step S8, the ceramic housing (7) includes a ceramic base (71) and a ceramic end cap (72), and the housing electrode (33) is disposed on the upper surface of the ceramic base (71); the lower surface of a first glass sheet (1) of the MEMS magneto-electric coupling antenna chip is stuck and fixed on the inner side of the bottom of the ceramic base (71) through epoxy resin (8), then a third metal electrode (32) of the MEMS magneto-electric coupling antenna chip is connected with a shell electrode (33) through bonding of a lead wire (9), and finally the ceramic end cap (72) and the ceramic base (71) are welded and sealed through solder (11).
8. The method for packaging the MEMS magneto-electric coupling antenna at a low temperature according to claim 5, wherein:
in the step S1, the depth of the cavity is 3-5 mu m, and the depth of the metal electrode groove is 100-200 nm;
in the step S4, the thickness of the first positioning groove (4) is 100nm-200nm, the length is 1000 μm-2000 μm, and the width is 500 μm-1000 μm;
in the step S5, the thickness of the second positioning groove (41) is 100nm-200nm, the length is 1000 μm-2000 μm, and the width is 500 μm-1000 μm.
9. The method for packaging the MEMS magneto-electric coupling antenna at a low temperature according to claim 6, wherein:
in the step S502, the thickness of the ZnO piezoelectric film is 500nm-5 μm, the length is 100 μm-200 μm, and the width is 20 μm-100 μm;
in the step S503, the thickness of the second metal electrode (31) is 50nm-200nm, the length is 100 μm-200 μm, and the width is 20 μm-100 μm.
10. The method for packaging the MEMS magneto-electric coupling antenna at a low temperature according to claim 5, wherein: in the step S6, the upper surface of the first glass sheet (1) is bonded with the lower surface of the MEMS magneto-electric coupling antenna wafer, and then the third metal electrode (32), the first metal electrode (3) and the second metal electrode (31) are subjected to high-temperature annealing treatment at 200 ℃ for 1 hour; and finally, bonding the lower surface of the second glass sheet (101) with the upper surface of the MEMS magneto-electric coupling antenna wafer.
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