KR100705007B1 - Micro sensor and method of manufacturing the same - Google Patents

Abstract

The present invention relates to a micro-sensor and a method for manufacturing the same, by enabling the manufacturing in the semiconductor fab batch line, there is an effect that can improve the process yield and reduce the cost.

Micro sensor according to the present invention for this purpose, the first silicon substrate formed with a sensor moving part in the center; First pad metal interconnections formed on the first silicon substrate on both sides of the moving part; A first sealing metal wire formed on the first silicon substrate spaced apart from the first pad metal wire by a predetermined distance to the outside; A second silicon substrate having a cavity formed on a surface opposing the moving part; A second pad metal wire formed through the second silicon substrate such that an upper surface thereof is bonded to the first pad metal wire; A second sealing metal wire formed in the second silicon substrate such that an upper surface thereof is bonded to the first sealing metal wire; A solder ball formed on a bottom surface of the second pad metal wiring; And a PCB substrate connected with the solder balls.

Sensor, wafer level, bonding, metal

Description

Micro sensor and method of manufacturing the same

1 to 8 is a cross-sectional view for each process for explaining a method of manufacturing a micro sensor according to the prior art.

9 is a cross-sectional view showing the structure of a micro sensor according to an embodiment of the present invention.

10 to 26 is a cross-sectional view for each process for explaining a method of manufacturing a micro sensor according to an embodiment of the present invention.

<Description of Symbols for Main Parts of Drawings>

201: first silicon substrate 201a: sensor moving part

202: first insulating film

203: Via for forming first sealing metal wiring

204: first pad metal wiring forming via

205: diffusion barrier film 206: first seed film

207: copper film 207a: first sealing metal wiring

207b: first pad metal wiring 208: second insulating film

301: a second silicon substrate

302: second pad metal wiring forming via

303: Via for forming second sealing metal wiring

304: nitride film 305: second seed film

306: Photosensitive film 306a: Photosensitive film pattern

307a: second sealing metal wiring 307b: second pad metal wiring

308: cavity 309: solder ball

400: PCB board

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a micro sensor and a method of manufacturing the same. In particular, an inertial sensor such as an acceleration sensor and an angular velocity sensor, and a sensor including a moving part such as an actuator are manufactured in a semiconductor fab batch line By making it possible, the present invention relates to a micro sensor and a method for manufacturing the same, which can improve process yield and reduce cost.

One of the most interesting technologies in recent years, the MEMS (Micro Electro Mechanical System) technology, besides implementing a simple sensor function, is showing more functions than expected in various markets.

In general, when fabricating a micro sensor using the MEMS technology, conventionally, a silicon microstructure fabricated on a silicon or glass wafer is anodically bonded with a glass wafer. The bonding at the wafer level was used.

1 to 8 are cross-sectional views for each process for explaining a method of manufacturing a microsensor according to the prior art using the anodic bonding method, and FIG.

First, as shown in FIG. 1, the silicon oxide film 101 is grown on the first glass wafer 100 for forming a sensor wafer, and then the silicon film 102 having a predetermined thickness on the silicon oxide film 101 is formed. To form.

Then, as shown in FIG. 2, a portion of the silicon film 102 is removed through a mask process and an etching process to form the fixed point 102a, the moving part 102b, and the sealing bonding portion 102c. do.

Next, as shown in FIG. 3, using the fixing point 102a, the moving part 102b and the sealing bonding portion 102c as a mask, the silicon oxide film 101 is etched with HF solution, and Through this, the moving part 102b is made into a release state floating in the air, thereby completing a sensor wafer. As the etching process of the silicon oxide film 101 by the HF solution is completed, the fixing point 102a, the moving part 102b, and the sealing bonding part 102c are separated from each other.

Thereafter, a process of forming a cap wafer is performed separately from the process of forming the sensor wafer. In the cap wafer forming process, first, as shown in FIG. 4, the second glass wafer 103 for cap wafer formation is provided, and then the moving part 102b of the sensor wafer shown in FIG. 3 is removed. After bonding with the second glass wafer 103, in order not to contact the second glass wafer 103, a portion of the bonding surface of the second glass wafer 103, that is, the portion of the moving part 102a, corresponds to the moving portion 102a. A cavity 104 is formed by etching the region of the second glass wafer 103.

Then, as shown in FIG. 5, the via hole 105 is formed by etching the portion of the second glass wafer 103 corresponding to the sealing bonding portion 102c of the sensor wafer to complete the cap wafer.

Next, as shown in FIG. 6, the cap wafer composed of the second glass wafer 103 having the cavity 104 and the via hole 105 formed thereon is anodized to the sensor wafer as shown in FIG. 3. Joining by bonding. The anodic bonding method is a method of bonding silicon and glass. When a voltage is applied to both ends of the glass at an elevated temperature, Na ₂ O components present in the glass are ionized, and Na + cations are concentrated on the cathode side. On the contrary, O ₂ − anions form the charge layer on the anode side. As described above, strong electrostatic force is generated between the charge layer of the anion and the positive electrode where the cation is formed, and a strong junction is formed at the interface by a chemical reaction.

As shown in FIG. 7, after the anodic bonding process is completed, a metal film 106 is deposited on the second glass wafer 103 including the via hole 105. Aluminum (Al) may be used as the metal film 106.

Next, as shown in FIG. 8, the metal film 106 is selectively etched to form the metal electrode 106a, thereby completing the microsensor.

The anodic bonding method is capable of bonding metal and glass, glass and glass, and silicon and glass, and by using a packaging material as glass, it is possible to visually observe the inside and the operation of an externally manufactured device. Although there is an advantage, the glass applied to the method is composed of Na components that are contraindicated in the semiconductor fab process, there is a disadvantage that can not be applied in the semiconductor fab batch line. Therefore, there is a problem in the manufacturing method of the micro sensor according to the prior art using the anodic bonding method, there is a limit in improving the process yield of the micro sensor, reducing the cost.

On the other hand, as a wafer-level bonding method, in addition to the anodical bonding method, there are fusion bonding, eutectic bonding, and frit glass bonding. Application to the process is not possible.

Accordingly, the present invention has been made to solve the above problems, and an object of the present invention is to enable the manufacturing in the semiconductor fab batch line, thereby improving the process yield and reduce the cost, and a manufacturing method thereof To provide.

Micro sensor according to the present invention for achieving the above object,

A first silicon substrate having a sensor moving part formed at a center portion thereof;

First pad metal interconnections formed on the first silicon substrate on both sides of the moving part;

A first sealing metal wire formed on the first silicon substrate spaced apart from the first pad metal wire by a predetermined distance to the outside;

A second silicon substrate having a cavity formed on a surface opposing the moving part;

A second pad metal wire formed through the second silicon substrate such that an upper surface thereof is bonded to the first pad metal wire;

A second sealing metal wire formed in the second silicon substrate such that an upper surface thereof is bonded to the first sealing metal wire;

A solder ball formed on a bottom surface of the second pad metal wiring; And

And a PCB substrate connected with the solder balls.

Here, the first pad metal wiring and the first sealing metal wiring are extended to a predetermined depth in the first silicon substrate.

And, the manufacturing method of the micro sensor according to the present invention for achieving the above object,

On the first silicon substrate for forming a sensor wafer, a first sealing metal wiring forming via exposing portions of both edges of the first silicon substrate and a first spaced inward from the first sealing metal wiring forming via. Forming a first insulating film having respective pad metal wiring forming vias formed thereon;

Forming a first sealing metal wiring and a first pad metal wiring to respectively fill the first sealing metal wiring forming via and the first pad metal wiring forming via;

Etching the predetermined thicknesses of the first insulating film and the first silicon substrate in the inner portion of the first pad metal wiring to form a sensor moving part spaced apart from each other by a predetermined distance;

Etching the silicon substrate around the moving part to release the moving part;

Completing the sensor wafer by removing the first insulating film remaining after the etching;

Separately providing a second silicon substrate for cap wafer formation;

Selectively etching the second silicon substrate so as to correspond to the first sealing metal interconnection and the second sealing metal interconnection via and the first pad metal interconnection, and to be deeper than the second sealing metal interconnection via; Forming vias for forming second pad metal wires, respectively;

Forming a second sealing metal wiring and a second pad metal wiring respectively filling the second sealing metal wiring forming via and the second pad metal wiring forming via;

Selectively etching the portion of the second silicon substrate corresponding to the moving part to form a cavity to complete a cap wafer;

Bonding the first sealing metal wire and the second sealing metal wire and the first pad metal wire and the second pad metal wire to each other;

Performing a back grinding process on the second silicon substrate to expose a bottom surface of the second pad metal wiring;

Forming solder balls on a lower surface of the exposed second pad metal interconnection; And

Connecting the solder balls to a PCB substrate.

Here, after the step of forming the first insulating film,

And etching the portion of the first silicon substrate exposed by the first sealing metallization forming via and the first pad metallization forming via to a predetermined thickness.

The first insulating film is formed using a TEOS film.

In addition, the step of forming the first sealing metal wiring and the first pad metal wiring, respectively,

Sequentially depositing a diffusion barrier film and a seed film on the first insulating film including the first sealing metal wiring forming via and the first pad metal wiring forming via;

Forming a copper film on the seed film so as to fill the first sealing metal wiring forming via and the first pad metal wiring forming via; And

And CMP the resultant until the first insulating film is exposed.

In addition, the diffusion barrier film is characterized in that the deposition using any one single film selected from the group consisting of TiSiNx, TaSiNx, Ta and TaN, or any two or more multiple films.

In addition, the diffusion barrier film is characterized in that the deposition using a nitride film.

The seed film may be deposited using any one selected from the group consisting of Cu, Ru, and Ni.

In addition, the step of forming the sensor moving part,

Forming a second insulating film on the first insulating film including the first sealing metal wire and the first pad metal wire;

Selectively etching the second insulating layer on an inner portion of the first pad metal wiring; And

And etching the predetermined thicknesses of the first insulating film and the first silicon substrate by using the second insulating film remaining after the etching as an etching mask.

The second insulating film may be formed using a TEOS film.

In addition, the second sealing metal wiring and the second pad metal wiring may be formed higher than the upper surface of the second silicon substrate.

The forming of the second sealing metal wire and the second pad metal wire may include:

Depositing a nitride film and a seed film on a surface of the second silicon substrate including the second sealing metal wiring forming via and the second pad metal wiring forming via;

Applying a photoresist film on the seed film;

Selectively patterning the photoresist to form a photoresist pattern that exposes the second sealing metal wiring forming via and the second pad metal wiring forming via;

Performing a copper plating process to form a second sealing metal wiring and a second pad metal wiring respectively filling the second sealing metal wiring forming via and the second pad metal wiring forming via exposed by the photosensitive film pattern; Doing;

Removing the photoresist pattern; And

And etching the seed film exposed by the second sealing metal wiring and the second pad metal wiring.

In addition, the nitride film is characterized in that the deposition by using a CVD or thermal deposition method.

The seed film may be deposited using any one selected from the group consisting of Cu, Ru, and Ni.

In addition, the copper plating process, characterized in that performed by electroplating or electroless plating method.

In addition, after the seed film is etched,

Performing a cleaning process; And

It further comprises the step of performing an annealing process.

The bonding of the first sealing metal wire and the second sealing metal wire and the first pad metal wire and the second pad metal wire to each other may include:

It is characterized by performing in any one atmosphere selected from the group consisting of a vacuum atmosphere, an Ar atmosphere and a forming gas atmosphere.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention.

Micro Sensor Structure

9 is a cross-sectional view showing the structure of a micro sensor according to an embodiment of the present invention.

As illustrated in FIG. 9, a micro sensor according to an embodiment of the present invention includes a first silicon substrate 201 for forming a sensor wafer including a sensor moving part 201 a, a first silicon substrate 201, and a first silicon substrate 201. A second silicon substrate 301 for forming a metal bonded cap wafer, and a PCB substrate 400 electrically connected to the second silicon substrate 301.

In detail, a sensor moving part 201a is formed at a central portion of the first silicon substrate 201 of the micro sensor according to the embodiment of the present invention, and the first silicon substrates on both sides of the sensor moving part 201a are formed. The first pad metal wiring 207b is formed on 201. In addition, a first sealing metal wiring 207a is formed on the first silicon substrate 201 spaced apart from the first pad metal wiring 207b by a predetermined distance to the outside. Here, the first pad metal wiring 207b and the first sealing metal wiring 207a may be formed of a copper film, and as shown in the drawing, extend to a predetermined depth in the first silicon substrate 201. It may be.

A cavity 308 for protecting the moving part 201a is formed on a surface of the second silicon substrate 301 that faces the sensor moving part 201a. In addition, a second pad metal wiring 307b penetrating the second silicon substrate 301 is formed on the second silicon substrate 301 while the upper surface thereof is metal bonded to the first pad metal wiring 207b. have. In addition, in the second silicon substrate 301 corresponding to the first sealing metal wiring 207a, the second sealing metal wiring 307a, the upper surface of which is metal-bonded with the first sealing metal wiring 207a, is formed. Formed. Here, the second pad metal wiring 307b and the second sealing metal wiring 307a are made of a copper film similarly to the first pad metal wiring 207b and the first sealing metal wiring 207a, and the second Solder balls 309 are formed on the bottom surface of the pad metal wiring 307b.

In addition, the solder balls 309 formed on the bottom surface of the second pad metal wiring 307b are connected to the PCB substrate 400.

In the micro sensor according to the embodiment of the present invention, the first and second pad metal wirings 207b and 307b are respectively formed on the first silicon substrate 201 for forming a sensor wafer and the second silicon substrate 301 for forming a cap wafer. And first and second sealing metal wires 207a and 307a were formed, and metal bonding them to each other to realize hermetic sealing. In addition, a solder ball 309 is formed on a lower surface of the second pad metal wiring 307b penetrating the second silicon substrate 301 and connected to the PCB substrate 400 to realize a BGA type flip chip. It was.

Here, in the micro sensor as described above, the first silicon substrate 201 for forming a sensor wafer and the second silicon substrate 301 for forming a cap wafer include a first and second pad metal wirings 207b and 307b made of copper. Packaging at the wafer level by metal bonding of the first and second sealing metallizations 207a and 307a can be made possible in the semiconductor fab batch line.

Manufacturing method of micro sensor

Hereinafter, a method of manufacturing a micro sensor according to an embodiment of the present invention as described above will be described.

10 to 26 are cross-sectional views illustrating processes for manufacturing a micro sensor according to an exemplary embodiment of the present invention, and FIGS. 10 to 16 are cross-sectional views illustrating processes for forming a sensor wafer, and FIGS. 17 to 17. FIG. 23 is a cross-sectional view for each process for describing a cap wafer forming method, and FIGS. 24 to 26 are cross-sectional views for a process for explaining bonding, back grinding, and COB processes of a sensor wafer and a cap wafer.

<How to Form Sensor Wafer>

First, as shown in FIG. 10, a first insulating film 202 is formed on the first silicon substrate 201 for forming a sensor wafer. The first insulating film 202 is preferably formed to a thickness of 2,000 to 3,000 kPa using a TEOS film.

Then, as shown in FIG. 11, a predetermined portion of the first insulating layer 202 is selectively etched to form a first sealing metal wiring forming via 203 and a first pad metal wiring forming via 204. Form each. The first sealing metal wiring forming vias 203 are formed at portions of both edges of the first insulating layer 202, and the first pad metal wiring forming vias 204 are formed in the first sealing metal wirings. It is formed spaced apart from the dragon via 203 by a predetermined interval.

Here, the first sealing metal wiring forming via 203 and the first pad metal wiring forming via 204 may be formed by etching only the first insulating film 202 as described above. As described above, the first silicon substrate 201 under the first insulating layer 202 may be additionally etched by a predetermined thickness.

Next, as shown in FIG. 12, on the first insulating film including the first sealing metal wiring forming via and the first pad metal wiring forming via 203 and 204, the diffusion barrier film 205 and The first seed film 206 is sequentially deposited. Here, the diffusion barrier film 205 may be deposited using any single film selected from the group consisting of TiSiNx, TaSiNx, Ta, and TaN, or any two or more multiple films, or may be deposited using an insulating film, such as a nitride film. The first seed film 206 may be deposited using any one selected from the group consisting of Cu, Ru, and Ni. In addition, the diffusion barrier layer 205 and the first seed layer 206 may be deposited by any one method selected from the group consisting of CVD, PVD, and ALD.

Then, copper plating is performed on the first seed film 206 to fill the first sealing metal wiring forming via 203 and the first pad metal wiring forming via 204. ).

Next, as shown in FIG. 13, the resultant is subjected to chemical mechanical polishing (CMP) until the first insulating layer 202 is exposed, thereby forming the first sealing metal wiring forming via 203 and The first sealing metal wiring 207a and the first pad metal wiring 207b for filling the first pad metal wiring forming via 204 are formed, respectively. Therefore, the first sealing metal wiring 207a and the first pad metal wiring 207b are made of copper.

Then, a second insulating film 208 is formed on the first insulating film 202 including the first sealing metal wiring 207a and the first pad metal wiring 207b. The second insulating film 208 may be formed using a TEOS film or the like as the first insulating film 202.

Next, as shown in FIG. 14, after selectively etching the second insulating film 208 of the inner portion of the first pad metal wiring 207b, the second insulating film 208 remaining after the etching is removed. A predetermined thickness of the first insulating layer and the first silicon substrate 201 is etched using the etching mask to form the sensor moving parts 201a spaced apart from each other by a predetermined distance.

Then, as shown in FIG. 15, the silicon substrate 101 around the moving part 201a is isotropically etched by using the second insulating film 208 remaining after the etching as an etching mask. The moving part 201a is brought into a release state in the air.

Thereafter, as shown in FIG. 16, both the first insulating film and the second insulating film 202 and 208 remaining after the etching are removed to remove the first sealing metal wiring 207a and the first pad metal wiring 207b. ) Surface. Thus, the sensor wafer according to the embodiment of the present invention is completed.

<Cap Wafer Forming Method>

Then, a process of forming a cap wafer is performed separately from the sensor wafer forming process. 17, the cap wafer forming process first provides a second silicon substrate 301 for cap wafer formation, as shown in FIG. 17, and then the first pad metal wiring 207b of the sensor wafer shown in FIG. A portion of the second silicon substrate 301 is selectively etched to form a second pad metal wiring forming via 302.

Next, as shown in FIG. 18, the second pad metal wiring forming via 302 and a portion of the second silicon substrate 301 spaced apart from the outside by a predetermined distance are selectively etched to form the second pad metal. In addition to increasing the depth of the wiring forming via 302, a second sealing metal wiring forming via 303 corresponding to the first sealing metal wiring 207a of the sensor wafer shown in FIG. 16 is formed. Therefore, the second pad metal wiring forming via 302 is formed deeper than the second sealing metal wiring forming via 303.

Next, as shown in FIG. 19, on the surface of the second silicon substrate 301 including the second sealing metal wiring forming via 303 and the second pad metal wiring forming via 302, The nitride film 304 and the second seed film 305 are sequentially deposited. Thereafter, a photosensitive film 306 is coated on the second seed film 305. Here, the nitride film 304 is preferably deposited to a thickness of 10 to 3,000 kPa by CVD or thermal deposition. The second seed film 305 may be deposited by any one of CVD, PVD, and ALD using any one selected from the group consisting of Cu, Ru, and Ni.

Next, as shown in FIG. 20, the photosensitive film 306 is selectively patterned to expose the second sealing metal wiring forming via 303 and the second pad metal wiring forming via 302. The pattern 306a is formed.

Next, as illustrated in FIG. 21, a copper plating process is performed to expose the second sealing metal wiring forming via 303 and the second pad metal wiring forming via exposed by the photosensitive film pattern 306a. The second sealing metal wiring 307a and the second pad metal wiring 307b filling the 302 are respectively formed. The copper plating process may be performed by an electroplating or electroless plating method, and the second sealing metal wiring 307a and the second pad metal wiring 307b may be formed on the second silicon substrate 301. It is preferable to carry out until it is formed to a thickness of 10 to 5,000 mm higher than the upper surface. Accordingly, the second sealing metal wiring 307a and the second pad metal wiring 307b are made of copper.

Thereafter, as shown in FIG. 22, the second seed layer 305 exposed by the second sealing metal interconnection 307a and the second pad metal interconnection 307b is removed after the photoresist pattern 306a is removed. Etch the part. The resulting product is then subjected to a cleaning process and an annealing process in turn.

Next, as shown in FIG. 23, a portion of the second silicon substrate 301 corresponding to the moving part 201a of the sensor wafer is selectively etched to form a cavity 308, and then a cleaning process is performed. To complete the cap wafer. The cavity 308 may be configured such that, after a subsequent bonding process between the sensor wafer and the cap wafer, the moving part 201a portion of the sensor wafer does not come into contact with the second silicon substrate 301 for forming the cap wafer. To form.

<Bonding of sensor wafer and cap wafer>

Then, as shown in FIG. 24, the first sealing metal wiring 207a of the sensor wafer and the second sealing metal wiring 307a of the cap wafer are metal bonded to each other, and the first sealing of the sensor wafer is performed. The pad metal interconnection 207b and the second pad metal interconnection 307b of the cap wafer are metal bonded to each other to implement hermetic sealing, thereby completing wafer level packaging of the sensor wafer and the cap wafer.

The metal bonding process between the first and second sealing metal wires 207a and 307a and the first and second pad metal wires 207b and 307b may be performed in a vacuum atmosphere at a temperature of about 300 to 400 ° C. Do. In this case, an Ar atmosphere or a forming gas atmosphere may be used instead of the vacuum atmosphere. Here, the forming gas is a mixed gas consisting of nitrogen and hydrogen gas.

<Back Grinding of Cap Wafer>

Next, as shown in FIG. 25, a back grinding process of grinding the back surface of the second silicon substrate 301 to expose the bottom surface of the second pad metal wiring 307b of the cap wafer is performed. To complete the microsensor.

<COB process>

Then, as shown in FIG. 26, after forming a solder ball (309) on the lower surface of the exposed second pad metal wiring (307b), the micro-sensor on which the solder ball 309 is formed is PCB A chip on board (COB) process for connecting to the substrate 400 is performed. The COB process may be performed through solder reflow between the solder ball 309 formed on the bottom surface of the second pad metal wiring 307b of the micro sensor and the electrode (not shown) formed on the PCB substrate 400. As described above, in the micro-sensor according to the embodiment of the present invention, the solder ball 309 is formed on the lower surface of the second pad metal wiring 307b penetrating the second silicon substrate 301, and the PCB substrate ( 400) to implement a BGA type flip chip.

Here, in the micro sensor as described above, the first silicon substrate 201 for forming a sensor wafer and the second silicon substrate 301 for forming a cap wafer include a first and second pad metal wirings 207b and 307b made of copper. Packaging at the wafer level by metal bonding of the first and second sealing metallizations 207a and 307a can be made possible in the semiconductor fab batch line. Therefore, the present invention can contribute to improved yield and cost reduction of the micro sensor manufacturing process. In addition, the metal bonding method of the present invention as described above has the advantage that it can be applied to not only the sensor element but also a three-dimensional (3D) integration process and a SiP (System in Package) process.

Although the preferred embodiments of the present invention have been described in detail above, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Accordingly, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concept of the present invention as defined in the following claims also fall within the scope of the present invention.

As described above, according to the micro-sensor according to the present invention and a method of manufacturing the same, the first and second pad metal wirings and the first and second pads of copper material are formed on the first silicon substrate for forming the sensor wafer and the second silicon substrate for forming the cap wafer. Hermetic sealing can be implemented by forming the first and second sealing metal wirings and metal bonding them together. In addition, a solder ball may be formed on a lower surface of the second pad metal wiring penetrating the second silicon substrate, and the solder ball may be connected to the PCB substrate to implement a BGA type flip chip.

Therefore, according to the present invention, since the first silicon substrate and the second silicon substrate can be packaged at the wafer level by metal bonding of metal wires made of copper, it is possible to manufacture a micro sensor in a semiconductor fab batch line. . Therefore, it is possible to contribute to the mass production of the sensor element through the improvement of the process yield and the reduction of the process cost. In addition, the method of the present invention has the advantage that it can be applied to not only the sensor device but also a three-dimensional (3D) integration process and a SiP (System in Package) process.

Claims (18)

delete delete Forming a first insulating film on the first silicon substrate for forming the sensor wafer; Forming first sealing metal wiring forming vias exposing portions of both edges of the first silicon substrate and first pad metal wiring forming vias spaced inwardly from the first sealing metal wiring forming vias, respectively; ; Forming a first sealing metal wiring and a first pad metal wiring to respectively fill the first sealing metal wiring forming via and the first pad metal wiring forming via; Etching the predetermined thicknesses of the first insulating film and the first silicon substrate in the inner portion of the first pad metal wiring to form a sensor moving part spaced apart from each other by a predetermined distance; Etching the silicon substrate around the moving part to release the moving part; Completing the sensor wafer by removing the first insulating film remaining after the etching; Separately providing a second silicon substrate for cap wafer formation; Selectively etching the second silicon substrate so as to correspond to the first sealing metal interconnection and the second sealing metal interconnection via and the first pad metal interconnection, and to be deeper than the second sealing metal interconnection via; Forming vias for forming second pad metal wires, respectively; Forming a second sealing metal wiring and a second pad metal wiring respectively filling the second sealing metal wiring forming via and the second pad metal wiring forming via; Selectively etching the portion of the second silicon substrate corresponding to the moving part to form a cavity to complete a cap wafer; Bonding the first sealing metal wire and the second sealing metal wire and the first pad metal wire and the second pad metal wire to each other; Performing a back grinding process on the second silicon substrate to expose a bottom surface of the second pad metal wiring; Forming solder balls on a lower surface of the exposed second pad metal interconnection; And Connecting the solder ball to a PCB substrate. The method of claim 3, wherein After forming the first insulating film, And etching the portion of the first silicon substrate exposed by the first sealing metal wiring forming via and the first pad metal wiring forming via to a predetermined thickness. The method of claim 3, wherein And the first insulating film is formed using a TEOS film. The method of claim 3, wherein Forming the first sealing metal wiring and the first pad metal wiring, respectively, Sequentially depositing a diffusion barrier film and a seed film on the first insulating film including the first sealing metal wiring forming via and the first pad metal wiring forming via; Forming a copper film on the seed film so as to fill the first sealing metal wiring forming via and the first pad metal wiring forming via; And CMP the resultant until the first insulating film is exposed. The method of claim 6, The diffusion barrier film is a method of manufacturing a micro sensor, characterized in that the deposition using any one single film selected from the group consisting of TiSiNx, TaSiNx, Ta and TaN, or any two or more multiple films. The method of claim 6, The diffusion barrier film is a manufacturing method of a micro sensor, characterized in that for depositing using a nitride film. The method of claim 6, The seed film is a method of manufacturing a micro-sensor characterized in that the deposition using any one selected from the group consisting of Cu, Ru and Ni. The method of claim 3, wherein Forming the sensor moving part, Forming a second insulating film on the first insulating film including the first sealing metal wire and the first pad metal wire; Selectively etching the second insulating layer on an inner portion of the first pad metal wiring; And And etching the predetermined thicknesses of the first insulating film and the first silicon substrate by using the second insulating film remaining after the etching as an etching mask. The method of claim 10, And the second insulating film is formed by using a TEOS film. The method of claim 3, wherein And the second sealing metal wire and the second pad metal wire are formed higher than the upper surface of the second silicon substrate. The method of claim 3, wherein Forming the second sealing metal wiring and the second pad metal wiring, Depositing a nitride film and a seed film on a surface of the second silicon substrate including the second sealing metal wiring forming via and the second pad metal wiring forming via; Applying a photoresist film on the seed film; Selectively patterning the photoresist to form a photoresist pattern that exposes the second sealing metal wiring forming via and the second pad metal wiring forming via; Performing a copper plating process to form a second sealing metal wiring and a second pad metal wiring respectively filling the second sealing metal wiring forming via and the second pad metal wiring forming via exposed by the photosensitive film pattern; Doing; Removing the photoresist pattern; And And etching the seed film exposed by the second sealing metal wiring and the second pad metal wiring. The method of claim 13, The nitride film is a manufacturing method of a micro sensor, characterized in that the deposition by using a CVD or thermal deposition method. The method of claim 13, The seed film is a method of manufacturing a micro-sensor characterized in that the deposition using any one selected from the group consisting of Cu, Ru and Ni. The method of claim 13, The copper plating process, the method of manufacturing a micro-sensor, characterized in that performed by electroplating or electroless plating method. The method of claim 13, After etching the seed film, Performing a cleaning process; And A method of manufacturing a microsensor, further comprising the step of performing an annealing process. The method of claim 3, wherein Bonding the first sealing metal wiring and the second sealing metal wiring, and the first pad metal wiring and the second pad metal wiring to each other, A method of manufacturing a microsensor, which is carried out in any one atmosphere selected from the group consisting of a vacuum atmosphere, an Ar atmosphere and a forming gas atmosphere.

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