CN114050395A - Very-low-frequency MEMS antenna chip and preparation method thereof - Google Patents
Very-low-frequency MEMS antenna chip and preparation method thereof Download PDFInfo
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- CN114050395A CN114050395A CN202111206448.5A CN202111206448A CN114050395A CN 114050395 A CN114050395 A CN 114050395A CN 202111206448 A CN202111206448 A CN 202111206448A CN 114050395 A CN114050395 A CN 114050395A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/04—Adaptation for subterranean or subaqueous use
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/002—Protection against seismic waves, thermal radiation or other disturbances, e.g. nuclear explosion; Arrangements for improving the power handling capability of an antenna
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
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Abstract
The invention discloses a very low frequency antenna applied to underwater communication, which mainly comprises a silicon substrate 1, a silicon dioxide film 2, a lower electrode 3, a c-axis oriented piezoelectric film 4, an upper electrode 5, an a-axis oriented piezoelectric film 6 and a magnetostrictive film 7, wherein except the silicon substrate 1 and the silicon dioxide film 2, the rest parts jointly form an MEMS (micro-electromechanical system) resonance structure. The antenna provided by the invention is suitable for a very low frequency band of underwater communication, the size is 6mm 0.5mm, the frequency is (3-30kHz), and the matching relation between the size and the wavelength of the conventional antenna is broken through by taking the magnetic component in an electromagnetic field as a medium. The MEMS antenna has the advantages of compatibility with MEMS technology, easiness in integration, good transmitting capability and the like, and can remarkably reduce the size and the weight of the conventional communication system.
Description
(I) technical field
The invention belongs to the field of Micro Electro Mechanical Systems (MEMS), and particularly relates to a very low frequency antenna chip for underwater communication.
(II) background of the invention
In the future, submarine and UUV are required to cooperate with underwater, water surface and aerial multiple systems for operation, and the operation tasks such as reconnaissance, anti-diving and the like are completed under the conditions of large diving depth and long distance. Therefore, higher requirements are put on the concealment of underwater communication and cross-medium communication.
The underwater acoustic communication is a main technical means of underwater communication, and because the air-water interface conversion cannot be directly realized by sound waves, a communication target is easily exposed by adopting a relay means, and the safety is reduced, the underwater acoustic communication is difficult to carry out cross-medium communication. Research shows that the very low frequency electromagnetic wave communication has the advantages of good penetrability, capability of realizing long-distance cross-interface communication and the like, and is one of the important technical means for realizing uninterrupted communication under the conditions of large depth and long distance of the current underwater vehicle. Because the size of the antenna needs to be matched with the wavelength of electromagnetic waves, the size of the antenna is large, and the anti-destruction capability of a land-based fixed station and the concealment of underwater military units are reduced. How to effectively reduce the size and quality of the antenna becomes a hot issue for research on very low frequency wireless communication systems.
At present, a great number of scholars have made intensive research on the antenna miniaturization technology, and mainly focus on the aspects of topological structure design and novel materials. The antenna is widely applied to a zigzag linear antenna at present, and the whole space utilization rate of the antenna is improved by bending a middle-long straight line of the antenna and filling a space gap. However, since the currents on the adjacent arms are 180 ° out of phase and cancel the respective radiations in the far field, a partial area of the antenna is not an effective radiator, and thus a high gain cannot be provided based on the meander line type antenna. The invention discloses a growing tree-cross composite fractal antenna with the publication number of CN106876880A, and the invention is named as a growing tree-cross composite fractal antenna.
The left-handed material is a novel method for miniaturizing the antenna at present. These materials are artificially implemented by using metal arrays in dielectric or magnetic substrates, which also exhibit unusual scattering and propagation properties over a limited frequency range, also known as metamaterials. They have positive permittivity and permeability, which properties can be used to add negative time delays to waves traveling in the medium, however such a miniaturized antenna approach can have adverse effects on bandwidth, gain degradation, and the like.
At present, common antenna miniaturization modes are concentrated on a GHz frequency band, and the common antenna miniaturization modes can be less applied to a very low frequency band. The invention relates to a magnetoelectric antenna based on a magnetostrictive piezoelectric material and a preparation method thereof, which have the application number of 201810718545.4, and excite bulk acoustic waves by magnetoelectric coupling effect, however, the invention has several obvious differences with the invention.
First, the patent uses bulk acoustic wave resonance to realize the mutual conversion of oscillation current and electromagnetic wave, and the bulk acoustic wave frequency is in GHz band, which is difficult to be applied to very low frequency band (3-30 kHz). This patent adopts MEMS resonant structure mechanical resonance's mode to realize oscillating current and electromagnetic wave's interconversion.
Secondly, the length of a single antenna in the patent is 5cm, the width is 5cm, the thickness is 50nm-5 μm, and an overlarge surface area can cause stress imbalance of the magnetoelectric coupling film, and meanwhile, the single antenna can also start to vibrate difficultly when exciting electromagnetic waves, so that the problems of weak signals and the like are caused. This patent chip overall dimension is 6mm 0.5mm, and the size is littleer, has higher magnetoelectricity conversion efficiency moreover. Structurally, a mode of series output of 3 identical magnetoelectric coupling films (a magnetostrictive film and a piezoelectric film) is adopted, output gain is improved at a receiving signal end through nonlinear coupling output of a magnetoelectric coupling film array, electromagnetic waves generated by a piezomagnetic effect are coupled at an emitting end through a surface acoustic wave common waveguide, and radiation efficiency is improved.
Disclosure of Invention
Aiming at the problem of complaint, the invention provides a very low frequency MEMS antenna chip and a manufacturing method thereof, which solve the problems of huge size, higher signal attenuation strength, weak performance and the like of the conventional very low frequency band antenna.
In order to realize the functions, the invention adopts the following technical scheme:
the very low frequency MEMS antenna is prepared by adopting a surface micromachining process and a bulk silicon process and sequentially comprises a silicon substrate 1, a silicon dioxide film 2, a lower electrode 3, a c-axis oriented piezoelectric film 4, an upper electrode 5, an a-axis oriented piezoelectric film 6 and a magnetostrictive film 7 from bottom to top. The lower electrode 3, the c-axis oriented piezoelectric film 4, the upper electrode 5, the a-axis oriented piezoelectric film 6 and the magnetostrictive film 7 jointly form an MEMS resonance structure 8, wherein the c-axis oriented piezoelectric film 4, the a-axis oriented piezoelectric film 6 and the magnetostrictive film 7 form a magnetoelectric coupling film array.
The silicon substrate 1 forms a suspension substrate of a silicon dioxide film 2MEMS resonance structure; the a-axis orientation piezoelectric film 6 and the magnetostrictive film 7 are in a strip array structure, and the shape of the strip array corresponds to the shape of the interdigital electrodes of the lower electrode 3 and the upper electrode 5; the c-axis oriented piezoelectric film 4 is of a complete film structure and is arranged between the lower electrode 3 and the upper electrode 5.
The working principle of the invention is as follows:
when receiving very low frequency signals, external electromagnetic waves enable the MEMS resonant structure to generate mechanical resonance, the external electromagnetic waves are converted into low-frequency stress strain, the piezoelectric film is caused to vibrate, and current with the same frequency as the external electromagnetic waves is output. In addition, in order to solve the problem that the antenna receiving signal is weak, a plurality of (more than or equal to 3) identical magnetoelectric coupling films (magnetostrictive films and piezoelectric films) are adopted to be output in series, and the overall output performance of the antenna is improved through nonlinear coupling of the magnetoelectric coupling film array.
When a very low frequency signal is emitted, alternating current passes through the interdigital electrode of the upper electrode, surface wave planar common waveguide is excited on the interface of the a-axis piezoelectric film and the c-axis, stress strain is transferred to the magnetostrictive film, and electromagnetic waves are radiated due to piezomagnetic effect. The problem that the radiation performance of the existing antenna is weak is solved through the mode.
The bottom layer of the chip is a silicon substrate 1, the crystal direction of the silicon substrate 1 is 001, the two sides of the chip are polished, and a silicon dioxide layer 2 prepared by a thermal oxidation process is arranged on the chip to prevent electric leakage. On the silicon dioxide film 2 is a lower electrode 3. The lower electrode 3 is an interdigital electrode manufactured by a lift-off process. The lower electrode 3 is provided with a c-axis oriented piezoelectric film 4, and the piezoelectric film is prepared on the electrode through a sputtering process. The upper layer of the piezoelectric film is an upper electrode 5, and the upper electrode 5 is an interdigital electrode manufactured by adopting a stripping process. The upper layer of the upper electrode 5 is an a-axis oriented piezoelectric film 6, and a magnetostrictive film 7 is arranged on the a-axis oriented piezoelectric film. Wherein, the size of the silicon substrate 1 is (1-10) mm (0.3-0.5) mm, the MEMS resonance structure is positioned at the center of the silicon substrate 1 and is released by a back cavity etching process.
The thickness of the silicon dioxide film 2 is 50nm-5 μm, the lower electrode 3 is an interdigital electrode, wherein the length is 100-500 μm, the width is 10-30 μm, the thickness is 50nm-200nm, the number of the interdigital electrodes is more than or equal to 3, and the interdigital electrode gap is 2 μm-50 μm. The lower electrode 3 is provided with a c-axis oriented piezoelectric film 4, the length of the c-axis piezoelectric film is 200-500 mu m, the width of the c-axis piezoelectric film is 50-500 mu m, the thickness of the c-axis piezoelectric film is 500nm-5 mu m, and the plane size of the c-axis piezoelectric film is larger than that of the lower electrode 3. The upper electrode 5 is sized and manufactured in conformity with the lower electrode 3. The a-axis piezoelectric film 6 has a length of 100-500 μm, a width of 10-30 μm, and a thickness of 500nm-5 μm, wherein the number of films, the film gap, and the film shape are the same as those of the upper electrode 3. The size of the magnetostrictive film 7 is consistent with that of the a-axis piezoelectric film 6.
The interdigital electrode can be selected from Pt, Au and Ag optionally. The piezoelectric material can be selected from ZnO and AlN. The magnetostrictive material may be selected from Fe-Ga alloy, Ni alloy, Tb-Dy-Fe alloy.
The invention provides a preparation method of a very low frequency MEMS antenna chip, wherein the layered view of an MEMS antenna is shown in figure 1, the whole structure of the MEMS antenna is shown in figure 2, the processing process is shown in figure 3, and the processing steps are as follows:
the method comprises the following steps: the silicon substrate 1 is a double-sided polished silicon wafer. After cleaning, growing a silicon dioxide film through a thermal oxidation process, and then removing silicon dioxide on the lower surface. The thickness of the silicon dioxide film 2 is 50nm-5 mu m.
Step two: and carrying out a photoetching process, then sputtering an electrode material, and patterning by adopting a stripping process. The length of the lower electrode 3 is 100-500 mu m, the width is 10-30 mu m, the thickness is 50-200 nm, the number of the interdigital electrodes is more than or equal to 3, and the interdigital electrode gap is 2-50 mu m.
Step three: sputtering a layer of piezoelectric film 4 with c-axis orientation, then carrying out photoetching process, then carrying out ICP patterning on the piezoelectric film, and finally annealing the film. The c-axis piezoelectric film has the length of 200-500 mu m, the width of 50-500 mu m and the thickness of 500nm-5 mu m.
Step four: a photolithography process is performed, then an electrode material is sputtered, and the upper electrode 5 is prepared by a lift-off process. The upper electrode 5 is consistent with the lower electrode 3 in structural size.
Step five: sputtering a layer of a-axis oriented piezoelectric film 6, then carrying out photoetching process, then carrying out ICP patterning piezoelectric film, and finally annealing the prepared piezoelectric film. The a-axis piezoelectric film 6 has a length of 100-500 μm, a width of 10-30 μm, a thickness of 500nm-5 μm, the number of films, film gaps, and a shape consistent with that of the upper electrode 3.
Step six: a photolithography process is performed, then the magnetostrictive film 7 is sputtered, and then a lift-off process is performed to pattern the magnetostrictive film. Finally, carrying out vacuum magnetic induction annealing. The shape and thickness of the magnetostrictive film are consistent with those of the a-axis oriented piezoelectric film 6.
Step seven: and carrying out photoetching process, carrying out ICP back cavity etching, releasing the MEMS resonant structure, passivating an etching window, and finally scribing and packaging.
The invention has the beneficial effects that:
when the electromagnetic wave is received, the magnetic component in the electromagnetic wave is converted into the same-frequency vibration through the magnetostrictive film 7, the vibration is transmitted to the c-axis piezoelectric film 4 and the a-axis piezoelectric film 6, the piezoelectric film converts the vibration into the same-frequency current, and the mutual conversion of the electromagnetic wave and the alternating current is realized.
On the contrary, when the electromagnetic wave is emitted, an alternating current is input through the upper electrode 5, the a-axis piezoelectric film 6 generates the same-frequency vibration, surface waves are excited at the interfaces of the a-axis piezoelectric film 4 and the c-axis piezoelectric film 6, and the same-frequency electromagnetic wave is excited through the magnetostrictive film 7 by the vibration due to the piezomagnetic effect. The mode breaks through the matching relation between the size and the wavelength of the existing antenna by taking the magnetic component in the electromagnetic field as a medium.
In addition, aiming at the problem that the radiation performance of the antenna is weak due to the fact that the piezomagnetic effect of the existing magnetostrictive film is weak, when the antenna radiates, the magnetostrictive plane co-excitation is caused by exciting the surface wave, and then the radiation performance of the magnetostrictive film 7 is improved. When receiving, the strength of signals received by the antenna is improved through output of the plurality of magnetoelectric coupling film structures. The antenna chip is manufactured by the MEMS technology, the size of the device is small, integration is convenient, and the high precision is achieved.
Description of the drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly described below.
FIG. 1 very low frequency MEMS antenna chip layer view
FIG. 2 is a diagram of the whole structure of the very low frequency MEMS antenna chip
FIG. 3a thermal oxidation for preparing a silicon dioxide thin film 2
FIG. 3b sputter lift-off preparation of the bottom electrode 3
FIG. 3c sputter etching for preparing c-axis oriented piezoelectric film 4
FIG. 3d sputter stripping preparation of the top electrode 5
FIG. 3e sputter etching for preparing a-axis oriented piezoelectric film 6
FIG. 3f sputter stripping of patterned magnetostrictive film 7
FIG. 3g Back Cavity etch Release MEMS resonant Structure
FIG. 3h is a cross-sectional view of a very low frequency MEMS antenna chip
In the figure, 1-silicon substrate, 2-silicon dioxide film, 3-lower electrode, 4-c axis orientation piezoelectric film, 5-upper electrode, 6-a axis orientation piezoelectric film, 7-magnetostriction film and 8-MEMS resonance structure.
(IV) detailed description of the preferred embodiment
The following will refer to the following steps in the embodiments of the present invention with reference to the accompanying drawings:
firstly, taking a double-sided polished silicon wafer with the thickness of 500 mu m, and growing a silicon dioxide layer with the thickness of 100nm on the surface through a thermal oxidation process after standard cleaning. The silicon dioxide layer 2 serves as an insulating layer. Gold is selected as the lower electrode 3, photoetching is carried out, then a gold film is sputtered for 200nm, and then ultrasonic stripping treatment is carried out in acetone solution. The length of the lower electrode 3 is 100 micrometers, the width of the lower electrode is 20 micrometers, the thickness of the lower electrode is 100nm, the number of the interdigital electrodes is 3, and the gap is 30 micrometers.
Cleaning a silicon wafer, sputtering a c-axis piezoelectric film 4, and carrying out an ICP etching process after the photoetching process. The piezoelectric film 4 serves as a reception mode for converting mechanical vibration into an oscillation current. The c-axis piezoelectric film has the length of 200 mu m, the width of 100 mu m and the thickness of 500 nm.
And carrying out high-temperature vacuum annealing treatment to adjust the stress of the piezoelectric film 4. And cleaning the silicon wafer and carrying out a photoetching process. Then sputtering gold as an upper electrode 5, and finally carrying out ultrasonic stripping treatment in an acetone solution. The size and thickness of the upper electrode 5 are the same as those of the lower electrode 3.
Cleaning a silicon wafer, sputtering an a-axis piezoelectric film zinc oxide 6, exciting a surface wave by the piezoelectric film 6, guiding vibration in the whole plane, and transferring stress strain to an upper magnetostrictive film 7. And cleaning the silicon wafer, carrying out a photoetching process, and then patterning the piezoelectric film through ICP. The length of the a-axis piezoelectric film zinc oxide is 100 micrometers, the width of the a-axis piezoelectric film zinc oxide is 20 micrometers, the thickness of the a-axis piezoelectric film zinc oxide is 500nm, the gap of the a-axis piezoelectric film zinc oxide is 30 micrometers, and the number of the piezoelectric films is 3.
And cleaning the silicon wafer and carrying out a photoetching process. Then, a magnetostrictive film 7, which is a FeGaB material, is sputtered using a magnetron sputtering machine, and then ultrasonic peeling treatment is performed in an acetone solution. And (3) carrying out high-temperature (300 ℃) vacuum magnetic (0.1T) annealing treatment on the whole film, reducing the internal stress of the magnetic film, adjusting the coercive force of the magnetic material and inducing the directional arrangement of magnetic domains. The dimension and thickness of the magnetostrictive film 7 are consistent with those of the a-axis piezoelectric film 6.
And cleaning the silicon wafer and carrying out a photoetching process. And then carrying out back cavity etching to release the MEMS resonant structure. Finally, passivation treatment is carried out. And (4) scribing after cleaning the silicon wafer. And finally, high-pressure-resistant packaging is carried out, so that the underwater pressure-resistant adaptability of the chip is improved. The size of the very low frequency MEMS magnetoelectric chip after scribing is 6mm 0.5 mm.
When receiving an antenna signal, the MEMS resonant structure converts external electromagnetic waves into low-frequency stress strain through the magnetostrictive layer 7, causes the piezoelectric films 4 and 6 to vibrate, and outputs current with the same frequency as the external electromagnetic waves. 3 same magnetoelectric coupling film structures are adopted to be connected in series for output, and the overall output signal intensity of the antenna is improved through the nonlinear coupling of the magnetoelectric coupling film array.
When transmitting signals, the antenna chip excites surface waves through the interdigital electrode array of the upper electrode 5, so that the surface waves are guided in a planar co-waveguide mode, and strain is transferred to the plurality of magnetostrictive films 7 to radiate electromagnetic waves outwards. After being diced, the size of the very low frequency MEMS magnetoelectric chip is 6mm 0.5mm, which is far smaller than the size of the existing very low frequency antenna.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.
Claims (2)
1. A very low frequency MEMS antenna chip comprises a silicon substrate 1, a silicon dioxide film 2, a lower electrode 3, a c-axis oriented piezoelectric film 4, an upper electrode 5, an a-axis oriented piezoelectric film 6 and a magnetostrictive film 7 from bottom to top in sequence. The lower electrode 3, the c-axis oriented piezoelectric film 4, the upper electrode 5, the a-axis oriented piezoelectric film 6 and the magnetostrictive film 7 jointly form an MEMS resonance structure 8, wherein the c-axis oriented piezoelectric film 4, the a-axis oriented piezoelectric film 6 and the magnetostrictive film 7 form a magnetoelectric coupling film array.
The silicon substrate 1 forms a suspension substrate of a silicon dioxide film 2MEMS resonance structure; the a-axis orientation piezoelectric film 6 and the magnetostrictive film 7 are in a strip array structure, and the shape of the strip array corresponds to the shape of the interdigital electrodes of the lower electrode 3 and the upper electrode 5; the c-axis oriented piezoelectric film 4 is of a complete film structure and is arranged between the lower electrode 3 and the upper electrode 5.
2. A method for preparing a very low frequency MEMS antenna chip as claimed in claim 1, characterized in that it comprises the following steps:
the method comprises the following steps: the silicon substrate 1 is a double-sided polished silicon wafer; after cleaning, growing a silicon dioxide film by a thermal oxidation process, and then removing silicon dioxide on the lower surface;
step two: carrying out photoetching process, then sputtering electrode material, and adopting a stripping process for patterning;
step three: sputtering a layer of piezoelectric film 4 with c-axis orientation, then carrying out photoetching process, then carrying out ICP patterning on the piezoelectric film, and finally annealing the film;
step four: carrying out photoetching process, then sputtering electrode material, and preparing an upper electrode 5 through a stripping process; the structural size of the upper electrode 5 is consistent with that of the lower electrode 3;
step five: sputtering a layer of a-axis oriented piezoelectric film 6, then performing a photoetching process, then performing ICP patterning on the piezoelectric film, and finally annealing the prepared piezoelectric film; the number of the films, the film gaps and the film shapes are consistent with those of the upper electrode 3;
step six: carrying out a photoetching process, then sputtering a magnetostrictive film 7, and then carrying out a stripping process to pattern the magnetostrictive film; finally, carrying out vacuum magnetic induction annealing; the shape and the thickness of the magnetostrictive film are consistent with those of the a-axis oriented piezoelectric film 6;
step seven: and carrying out photoetching process, carrying out ICP back cavity etching, releasing the MEMS resonant structure, passivating an etching window, and finally scribing and packaging.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114824775A (en) * | 2022-05-11 | 2022-07-29 | 电子科技大学 | Multi-period acoustic excitation magnetoelectric antenna |
| CN114899591A (en) * | 2022-05-11 | 2022-08-12 | 电子科技大学 | Multi-period bulk acoustic wave magnetoelectric antenna |
| CN116632507A (en) * | 2023-07-21 | 2023-08-22 | 西北工业大学 | MEMS magneto-electric coupling antenna and low-temperature packaging method thereof |
| CN117118532A (en) * | 2023-08-25 | 2023-11-24 | 哈尔滨工程大学 | Cross-medium communication positioning integrated system and method |
| GB2620253A (en) * | 2022-05-09 | 2024-01-03 | Bae Systems Plc | Antenna |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| GB2620253A (en) * | 2022-05-09 | 2024-01-03 | Bae Systems Plc | Antenna |
| CN114824775A (en) * | 2022-05-11 | 2022-07-29 | 电子科技大学 | Multi-period acoustic excitation magnetoelectric antenna |
| CN114899591A (en) * | 2022-05-11 | 2022-08-12 | 电子科技大学 | Multi-period bulk acoustic wave magnetoelectric antenna |
| CN114824775B (en) * | 2022-05-11 | 2023-03-03 | 电子科技大学 | Multi-period acoustic excitation magnetoelectric antenna |
| CN116632507A (en) * | 2023-07-21 | 2023-08-22 | 西北工业大学 | MEMS magneto-electric coupling antenna and low-temperature packaging method thereof |
| CN116632507B (en) * | 2023-07-21 | 2023-10-10 | 西北工业大学 | MEMS magneto-electric coupling antenna and low-temperature packaging method thereof |
| CN117118532A (en) * | 2023-08-25 | 2023-11-24 | 哈尔滨工程大学 | Cross-medium communication positioning integrated system and method |
| CN117118532B (en) * | 2023-08-25 | 2024-05-07 | 哈尔滨工程大学 | Cross-medium communication positioning integrated system and method |
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