CN104803340A - Packaging structure and packaging method of MEMS optical chip based on silicon-glass bonding - Google Patents
Packaging structure and packaging method of MEMS optical chip based on silicon-glass bonding Download PDFInfo
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- CN104803340A CN104803340A CN201510167725.4A CN201510167725A CN104803340A CN 104803340 A CN104803340 A CN 104803340A CN 201510167725 A CN201510167725 A CN 201510167725A CN 104803340 A CN104803340 A CN 104803340A
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Abstract
The invention provides a packaging structure and a packaging method of an MEMS optical chip based on silicon-glass bonding, wherein the packaging structure comprises: the first component comprises optical glass, the upper surface of the optical glass is plated with an upper optical antireflection film, the lower surface of the optical glass is provided with a cavity, the upper surface of the cavity meets the requirement of optical surface smoothness, and the upper surface of the cavity is plated with a lower optical antireflection film; a second component comprising a MEMS optical chip; the first component and the second component realize wafer-level bonding through silicon-glass bonding, and form independent sealed cavities for each MEMS optical chip. The invention can realize the wafer level packaging requirement, improve the reliability and stability of the chip, ensure the electrical property, mechanical property and optical property required by the application of the optical chip and provide a comprehensive level superior to other packaging technologies. The invention can reduce the packaging cost, improve the packaging efficiency and reduce the optical loss, and has wide application prospect in the packaging of optical communication devices and optical sensing devices.
Description
Technical field
The invention belongs to MEMS (MEMS), optic communication, optical sensor, spectrum analysis, tunable laser field, particularly relate to a kind of encapsulating structure and method for packing of the MEMS optical chip based on silicon on glass bonding.
Background technology
The MEMS chip of tunable optical function is the Primary Component in intelligent optical communication or Fibre Optical Sensor, and common comprises optical attenuator (VOA), photoswitch, optic tunable filter etc.MEMS optical chip generally comprises movable optical micro mirror and corresponding microdrive, micro-structural, it requires high to clean environment degree, usually can only just can be exposed in air in the environment purification of 1000 grades, simultaneously also more responsive to air humidity, a lot of MEMS optical chip is not owing to resolving encapsulation problem and can not practical application.Air-tight packaging is the technical problem that the practical application of MEMS optical chip must solve.The scribing process of MEMS optical chip is also the bottleneck technique that MEMS optical chip is produced, its reason is optical mirror plane, movable microstructure can not stand common mechanical scribing or the bath of laser scribing, the white residue produced during scribing causes the inefficacy of MEMS optical chip and reduces the yield rate of chip, also considerably increases the white residue cleaning amount of chip even if do not lose efficacy.The basic way solving this scribing difficult problem is that before scribing, carry out wafer level to MEMS optical chip hermetically sealed.
MEMS optical chip can not be directly exposed in optical package workshop due to its micro-structural, and forcing MEMS package of optical device manufacturer must transform original optical package workshop is 1000 grades of purification workshops, substantially increases production cost.The level Hermetic Package requirement of MEMS package of optical device, is different from common package of optical device technique, needs manufacturer to increase air-tight packaging special equipment.And the wafer level packaging of MEMS optical chip can solve the level Hermetic Package of MEMS optical chip in MEMS chip manufacturing works, make the encapsulation of MEMS optical chip can complete device optoelectronic package in common optical package factory building.
The encapsulation of current MEMS optical chip adopts the packaging technology of semiconductor laser, detector, namely adopts TO encapsulation or butterfly encapsulation, MEMS optical chip is realized level Hermetic Package by the parallel soldering and sealing of the Can being with optical window.Its base designs airtight electrical lead, and optical window is welded on the top of shell by glass capsulation, therefore can realize the level Hermetic Package of MEMS optical chip, but its cost is higher.
Current MEMS package of optical device producer mainly adopts the method for single-chip shell+collimater to realize encapsulation, realizes level Hermetic Package more difficult.Adopt single-chip case package, not only packaging efficiency is low, also there is the problem that thermal stress is larger.Single, manual mode of the encapsulation of MEMS optical chip, be not able to batch, automated production, therefore the packaging cost of MEMS optical device is very high, account for 60% ~ 80%, MEMS optical-chip encapsulation efficiency of MEMS optical device totle drilling cost and cost become MEMS optical device produce in key issue.
In view of poor efficiency, the high cost of single-chip package, the wafer level packaging of MEMS is the inexorable trend of technical development.Wafer level packaging can realize encapsulating thousands of chip on wafer simultaneously, instead of a chip, thus significantly reduce labour and equipment investment, greatly improve packaging efficiency, and can reduce that back is thinning, detection and the processing step such as classification, more economical assembling technology procedure is provided, and die size and pin count need not be considered.Wafer level packaging decapacitation obtains reduction chip size, increases considerably the number of chips of single-wafer and produce outside economies of scale, wafer level technology allows the minimizing of foundation structure and single parts, no longer needs lead frame, molding, cuts muscle shaping, bonding die and wire welding tech technology.At present, MEMS sensor develops Wafer-Level Packaging Technology, significantly can reduce the packaging cost of MEMS sensor, but MEMS optical device also cannot realize wafer level packaging, its main cause is that MEMS optical device needs optical window, and optical window material adopts the material of the processing difficulties such as glass usually, especially contact conductor is comparatively difficult.The manufacturing process of wafer level packaging and MEMS optical chip is incompatible, and need consider wafer level packaging technique from the whole technique of MEMS optical chip, the selection of encapsulating material, packaging technology exists larger difficulty.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of encapsulating structure and method for packing of the MEMS optical chip based on silicon on glass bonding, the problem of the beset by troubles difficulty of the wafer level packaging for solving MEMS optical chip in prior art.
For achieving the above object and other relevant objects, the invention provides a kind of encapsulating structure of the MEMS optical chip based on silicon on glass bonding, comprising:
First component, comprises optical glass, and its upper surface is coated with optical anti-reflective film, lower surface is formed with cavity, for MEMS optical chip provides bubble-tight micromirror movements space, described cavity upper surface reaches optical surface smoothness requirements, and has been coated with lower optical anti-reflective film;
Second component, comprises MEMS optical chip, and described MEMS optical chip can realize the manipulation to optical signal under the effect of MEMS driver;
Described first component and second component realize Wafer level bonding by silicon on glass bonding, and form independently seal chamber for each MEMS optical chip.
As a kind of preferred version of the encapsulating structure of the MEMS optical chip based on silicon on glass bonding of the present invention, described MEMS optical chip comprises body silicon substrate, movable cavity, is positioned at described movable cavity and is fixed in the movable optical micro mirror on body silicon substrate, the highly reflecting films being positioned at described movable optical micro mirror surfaces and the electrode pad be arranged at outside described movable cavity by spring beam mechanism, wherein, the body silicon substrate between described electrode pad and movable cavity has exposed silicon face.
As a kind of preferred version of the encapsulating structure of the MEMS optical chip based on silicon on glass bonding of the present invention, described optical glass is the glass material of applicable silicon on glass bonding, described optical glass is bonded to the exposed silicon face of described body silicon substrate, and the leak rate of the seal chamber formed after bonding is 10
-8~ 10
-10atmcc/s.
Further, after described first component and second component bonding, described electrode pad is positioned at the outside of described seal chamber.
As a kind of preferred version of the encapsulating structure of the MEMS optical chip based on silicon on glass bonding of the present invention, described optical glass is manufactured with strip cavity at the lower surface of the electrode pad of corresponding MEMS optical chip.
As a kind of preferred version of the encapsulating structure of the MEMS optical chip based on silicon on glass bonding of the present invention, described optical glass is manufactured with TGV structure, the electrode pad position one_to_one corresponding of its position and MEMS optical chip, after first component and second component carry out silicon on glass bonding, the electrode pad of MEMS optical chip is directly caused the upper surface of optical glass by described TGV structure.
The present invention also provides a kind of method for packing of the MEMS optical chip based on silicon on glass bonding, comprises step:
A) preparation of first component: prepare lower surface and there is cavity optical glass, the logical optical surface of described cavity reaches the requirement of optical surface, with hard mask selectivity evaporation coating method optical anti-reflective film under housing surface evaporation, then optical anti-reflective film on the upper surface evaporation of optical glass;
B) preparation of second component: the disk of the MEMS optical chip adopting MEMS technology to prepare;
C) silicon on glass bonding: adopt silicon on glass bonding technique to carry out aligning bonding, for each MEMS optical chip forms independently seal chamber described first component and second component;
D) electrode is exposed: adopt the wide blade of scribing machine on optical clear matrix, to carry out dicing operation along bonding wafer scribe line, control the scribing degree of depth of scribing machine, the electrode pad of MEMS optical chip unit all in whole bonding wafer is exposed by dicing operation, does not scratch electrode pad;
Or adopt the technique that sandblasts to be removed by the optical clear matrix at electrode pad place, expose electrode pad;
E) chip is separated: adopt the narrow blade of scribing machine, along scribe line, whole bonding wafers is separated into each independently encapsulation unit.
As a kind of preferred version of the method for packing of the MEMS optical chip based on silicon on glass bonding of the present invention, described MEMS optical chip comprises body silicon substrate, movable cavity, is positioned at described movable cavity and is fixed in the movable optical micro mirror on body silicon substrate, the highly reflecting films being positioned at described movable optical micro mirror surfaces and the electrode pad be arranged at outside described movable cavity by spring beam mechanism, wherein, the body silicon substrate between described electrode pad and movable cavity has exposed silicon face.
Further, described optical glass is bonded to the exposed silicon face of described body silicon substrate, and after described first component and second component bonding, described electrode pad is positioned at the outside of described seal chamber.
As a kind of preferred version of the method for packing of the MEMS optical chip based on silicon on glass bonding of the present invention, steps A) in, the micromachine processing technology of glass is adopted to go out cavity in the lower surface grinding of described optical glass, and optical polish is carried out to the upper surface of described cavity, to reach the requirement of optical surface.
Further, steps A) also comprise step: adopt machining grinding, Ultra-Violet Laser processing or sandblasting grinding process in described optical glass corresponding MEMS optical chip electrode pad lower surface processing strip cavity.
As a kind of preferred version of the method for packing of the MEMS optical chip based on silicon on glass bonding of the present invention, steps A) comprise step:
A-1) first optical glass is provided, processes through hole in the position corresponding with MEMS optical chip of described first optical glass;
A-2) second optical glass is provided, first optical glass and described second optical glass with through hole are carried out bonding, after bond glass, form the optical glass of band cavity.
Further, steps A-2) in, first described first optical glass and the second optical glass are carried out pre-bonding, anneal then under a certain pressure, near the softening temperature of glass, allow the first optical glass and the second optical glass bonding be an integral material with some strength.
As a kind of preferred version of the method for packing of the MEMS optical chip based on silicon on glass bonding of the present invention, steps A) in be also included in the step that described optical glass makes TGV structure in advance, the position of described TGV structure and the electrode pad position one_to_one corresponding of MEMS optical chip, after first component and second component carry out silicon on glass bonding, the electrode pad of MEMS optical chip is directly caused the upper surface of optical glass by described TGV structure, then do not need to carry out D) step that electrode is exposed.
As a kind of preferred version of the method for packing of the MEMS optical chip based on silicon on glass bonding of the present invention, steps A) in, adopt the method for hard mask evaporation to realize the graphical of lower optical anti-reflective film during being coated with of described lower optical anti-reflective film, and the size of described lower optical anti-reflective film is only a bit larger tham the aperture that optics leads to light.
As mentioned above, the invention provides a kind of encapsulating structure and method for packing of the MEMS optical chip based on silicon on glass bonding, described encapsulating structure comprises: first component, comprise optical glass, its upper surface is coated with optical anti-reflective film, and lower surface is formed with cavity, for MEMS optical chip provides bubble-tight micromirror movements space, described cavity upper surface reaches optical surface smoothness requirements, and has been coated with lower optical anti-reflective film; Second component, comprises MEMS optical chip, and described MEMS optical chip can realize the manipulation to optical signal under the effect of MEMS driver; Described first component and second component realize Wafer level bonding by silicon on glass bonding, and form independently seal chamber for each MEMS optical chip.Adopt the structure of glass-encapsulated optical chip can realize wafer level packaging requirement in the present invention, reliability and the stability of chip can be improved, greatly reduce the encapsulation requirements such as optics collimator, not only ensure that electrical property, mechanical performance and the optical property required for optical chip application, and also provide the level of aggregation being better than other encapsulation technology.These excellent performance can Shi Guang MEMS package manufacturer greatly reduce costs, and improve packaging efficiency, make the light characteristic loss of chip near minimum, have a wide range of applications in the optic communication device in future and the encapsulation of photo-sensing device.
Accompanying drawing explanation
Fig. 1 ~ Fig. 2 is shown as the main TV structure schematic diagram of the encapsulating structure of the MEMS optical chip based on silicon on glass bonding of the present invention.
Fig. 3 is shown as the plan structure schematic diagram of the encapsulating structure of the MEMS optical chip based on silicon on glass bonding of the present invention.
Fig. 4 is shown as the wafer-level package structure schematic diagram of the encapsulating structure of the MEMS optical chip based on silicon on glass bonding of the present invention.
The structural representation that each step that Fig. 5 a ~ Fig. 7 e is shown as the method for packing of the MEMS optical chip based on silicon on glass bonding of the present invention presents.
Element numbers explanation
101 optical glass
102 times optical anti-reflective films
Optical anti-reflective film on 103
104 cavitys
105 body silicon substrates
106 movable optical micro mirrors
107 silicon spring beam mechanisms
108 electrode pads
109 highly reflecting films
110 strip cavitys
201 optical glass being processed with through hole
310 TGV structures
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this description can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by detailed description of the invention different in addition, and the every details in this description also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1 ~ Fig. 7 e.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Embodiment 1
As shown in Fig. 1 and Fig. 3 ~ Fig. 4, the present embodiment provides a kind of encapsulating structure of the MEMS optical chip based on silicon on glass bonding, comprising:
First component, comprises optical glass 101, and its upper surface is coated with optical anti-reflective film 103, lower surface is formed with cavity 104, for MEMS optical chip provides bubble-tight micromirror movements space, described cavity 104 upper surface reaches optical surface smoothness requirements, and has been coated with lower optical anti-reflective film 102;
Second component, comprises MEMS optical chip, and described MEMS optical chip can realize the manipulation to optical signal under the effect of MEMS driver;
Described first component and second component realize Wafer level bonding by silicon on glass bonding, and form independently seal chamber for each MEMS optical chip.Particularly, described MEMS optical chip comprises body silicon substrate 105, movable cavity, is positioned at described movable cavity and is fixed in the movable optical micro mirror 106 on body silicon substrate 105, the highly reflecting films 109 being positioned at described movable optical micro mirror 106 surface and the electrode pad 108 be arranged at outside described movable cavity by silicon spring beam mechanism 107, wherein, the body silicon substrate 105 between described electrode pad 108 and movable cavity has exposed silicon face.
Particularly, described optical glass 101 is the glass material being applicable to silicon on glass bonding, be such as Pyrex 7740, described optical glass 101 is bonded to the exposed silicon face of described body silicon substrate 105, form sealing ring, described sealing ring makes to form independently seal chamber between described optical glass and each MEMS optical chip.The leak rate of the seal chamber formed after bonding is 10
-8~ 10
-10atmcc/s.Further, after described first component and second component bonding, described electrode pad 108 is positioned at the outside of described seal chamber.
Exemplarily, described optical glass 101 is manufactured with strip cavity 110 at the lower surface of the electrode pad 108 of corresponding MEMS optical chip, and this elongated cavity 104 can ensure that MEMS optical chip is in the cutting stage, and electrode pad 108 is not easy to be scratched.
The basic functional principle of the MEMS optical chip based on silicon on glass bonding of the present embodiment is: form light in optical glass 101 pairs of certain limits of first component transparent (infrared lights as 1.3 in optic communication μm and 1.55 μm), movable optical micro mirror 106 in second component realizes a certain motion (as non-flat in-plane movings etc. such as space torsion, vertical minute surface translations) by MEMS driver, incident ray vertically realizes reflection, transmission or interference, finally be transmitted in air by optical glass 101, thus realize specific optical property.Cavity 104 in described optical glass 101 provides the seal cavity needed for minute surface non-plane motion, thus achieves the encapsulation to optical chip.
Figure 1 shows that the front view of the encapsulating structure of MEMS optical chip, its plan structure figure as shown in Figure 3.In addition, Fig. 1 and Fig. 3 is all only illustrated as the encapsulating structure of 1 MEMS optical chip, but, in the encapsulation process of reality, the encapsulating structure of the present embodiment can be used for the wafer level packaging to MEMS optical chip, as shown in Figure 4, this encapsulating structure can simplify encapsulation difficulty greatly, reduce packaging cost, improve the quality of encapsulation, have very wide application prospect at optic communication, optoelectronic areas.
As shown in Fig. 5 a ~ Fig. 5 f, the present embodiment also provides a kind of method for packing of the MEMS optical chip based on silicon on glass bonding, comprises step:
As shown in Fig. 5 a ~ Fig. 5 c, first carry out step 1), the preparation of first component: prepare lower surface and there is cavity 104 optical glass 101, the logical optical surface of described cavity reaches the requirement of optical surface, with hard mask selectivity evaporation coating method optical anti-reflective film 102 under housing surface evaporation, then optical anti-reflective film 103 on the upper surface evaporation of optical glass 101;
Particularly, this step 1) in, adopt the micromachine processing technology of glass to go out cavity 104 in the lower surface grinding of described optical glass 101, and optical polish is carried out to the upper surface of described cavity 104, to reach the requirement of optical surface.In addition, in this step, also comprise step: adopt machining grinding, Ultra-Violet Laser processing or sandblasting grinding process in the lower surface processing strip cavity 110 of described optical glass 101 corresponding MEMS optical chip electrode pad 108, this strip cavity 110 can ensure that MEMS optical chip is in the cutting stage, and electrode pad 108 is not easy to be scratched.
In the present embodiment, adopt the method for hard mask evaporation to realize the graphical of lower optical anti-reflective film 102 during being coated with of described lower optical anti-reflective film 102, and the size of described lower optical anti-reflective film 102 is only a bit larger tham the aperture that optics leads to light, as shown in Figure 5 c.
As fig 5d, then carry out step 2), the preparation of second component: the disk of the MEMS optical chip adopting MEMS technology to prepare.
In the present embodiment, described MEMS optical chip comprises: body silicon substrate 105, movable cavity, be positioned at described movable cavity and be fixed in the movable optical micro mirror 106 on body silicon substrate 105, the highly reflecting films 109 being positioned at described movable optical micro mirror 106 surface and the electrode pad 108 be arranged at outside described movable cavity by silicon spring beam mechanism 107, wherein, the body silicon substrate 105 between described electrode pad 108 and chip activity cavity has exposed silicon face.
As shown in Fig. 5 d ~ Fig. 5 e, then carry out step 3), silicon on glass bonding: adopt silicon on glass bonding technique to carry out aligning bonding, for each MEMS optical chip forms independently seal chamber described first component and second component.
In the present embodiment, described optical glass 101 is bonded to the exposed silicon face of described body silicon substrate 105, and after described first component and second component bonding, described electrode pad 108 is positioned at the outside of described seal chamber.
As shown in figure 5f, then carry out step 4), electrode is exposed: adopt the wide blade of scribing machine on optical clear matrix, to carry out dicing operation along bonding wafer scribe line, control the scribing degree of depth of scribing machine, the electrode pad 108 of MEMS optical chip unit all in whole bonding wafer is exposed by dicing operation, does not scratch electrode pad 108;
Or adopt the technique that sandblasts to be removed by the optical clear matrix at electrode pad 108 place, expose electrode pad 108.
In the present embodiment, the wide blade of scribing machine is adopted on optical glass 101, to carry out dicing operation along bonding wafer scribe line, control the scribing degree of depth of scribing machine, the electrode pad 108 of MEMS optical chip unit all in whole bonding wafer is exposed by dicing operation, due to the existence of optical glass 101 cavity 104, therefore, easily can control wide blade and not scratch electrode pad 108.
As shown in figure 5f, finally carry out step 5), chip is separated: adopt the narrow blade of scribing machine, along scribe line, whole bonding wafers is separated into each independently encapsulation unit.
In the present embodiment, chip is separated designed good bonding wafer scribe line when still adopting electrode exposed, does not need to redesign.Particularly, carry out chip be separated time still along the bonding wafer scribe line scribing designed, for being adjusted to the thickness of whole bonding wafer in the degree of depth, finally obtain the MEMS optical chip unit that single package is good.
Embodiment 2
As shown in Fig. 1 and Fig. 3 ~ Fig. 4, the present embodiment provides a kind of encapsulating structure of the MEMS optical chip based on silicon on glass bonding, its basic structure as described in Example 1, wherein, the described optical glass 101 with cavity 104 is for be formed by two optical glass bondings, it comprises the first optical glass 102 and the second optical glass 101 that the position corresponding with MEMS optical chip is processed with through hole, then forms the optical glass with cavity 104 by these two optical glass bondings.
As shown in Fig. 6 a ~ Fig. 6 g, the present embodiment also provides a kind of method for packing of the MEMS optical chip based on silicon on glass bonding, its basic step as embodiment 1, wherein, as shown in Fig. 6 a ~ Fig. 6 c, step 1) comprise step:
As shown in Figure 6 b, first carry out step 1-1), the first optical glass 102 is provided, processes through hole in the position corresponding with MEMS optical chip of described first optical glass 102;
As shown in Fig. 6 a ~ Fig. 6 c, then carry out step 1-2), the second optical glass 101 is provided, first optical glass 102 with through hole is carried out bonding with described second optical glass 101, after bond glass, forms the optical glass of band cavity 104.
In addition, above-mentioned steps 3-2) in, first described first optical glass and the second optical glass are carried out pre-bonding, then anneal under a certain pressure, near the softening temperature of glass, allow the first optical glass and the second optical glass bonding be an overall glass material with some strength.
It should be noted that, this step, when the first optical glass producing goes out through hole, also can process strip cavity 110 structure described in embodiment 1, to save processing step simultaneously.
Embodiment 3
As shown in Figure 2 to 4, the present embodiment provides a kind of encapsulating structure of the MEMS optical chip based on silicon on glass bonding, its basic structure is as embodiment 1, wherein, TGV structure 310 is manufactured with in advance in described optical glass, the electrode pad 108 position one_to_one corresponding of its position and MEMS optical chip, after first component and second component carry out silicon on glass bonding, the electrode pad 108 of MEMS optical chip is directly caused the upper surface of optical glass by described TGV structure 310.
As shown in Fig. 7 a ~ Fig. 7 e, the present embodiment also provides a kind of method for packing of the MEMS optical chip based on silicon on glass bonding, its basic step is as embodiment 1, wherein, as shown in Figure 7b, step 1) in also comprise: the step making TGV structure 310 in described optical glass in advance, the position of described TGV structure 310 and the electrode pad 108 position one_to_one corresponding of MEMS optical chip, after first component and second component carry out silicon on glass bonding, the electrode pad 108 of MEMS optical chip is directly caused the upper surface of optical glass by described TGV structure 310, be equivalent to directly electrode pad 108 be drawn, therefore, the method in the present embodiment is adopted then not need to carry out step 4 in embodiment 1) electrode is exposed and process the step of strip cavity 110, and can directly through step 5) in chip separating step, adopt the narrow blade of scribing machine, along scribe line, whole bonding wafers is separated into each independently encapsulation unit.
As mentioned above, the invention provides a kind of encapsulating structure and method for packing of the MEMS optical chip based on silicon on glass bonding, described encapsulating structure comprises: first component, comprise optical glass, its upper surface is coated with optical anti-reflective film 103, and lower surface is formed with cavity 104, for MEMS optical chip provides bubble-tight micromirror movements space, described cavity 104 upper surface reaches optical surface smoothness requirements, and has been coated with lower optical anti-reflective film 102; Second component, comprises MEMS optical chip, and described MEMS optical chip can realize the manipulation to optical signal under the effect of MEMS driver; Described first component and second component realize Wafer level bonding by silicon on glass bonding, and form independently seal chamber for each MEMS optical chip.Adopt the structure of glass-encapsulated optical chip can realize wafer level packaging requirement in the present invention, reliability and the stability of chip can be improved, greatly reduce the encapsulation requirements such as optics collimator, not only ensure that electrical property, mechanical performance and the hot property required for optical chip application, and also provide the level of aggregation being better than other encapsulation technology.These excellent performance can Shi Guang MEMS package manufacturer greatly reduce costs, and improve packaging efficiency, make the light characteristic loss of chip near minimum, have a wide range of applications in the optic communication device in future and the encapsulation of photo-sensing device.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (15)
1., based on an encapsulating structure for the MEMS optical chip of silicon on glass bonding, it is characterized in that, comprising:
First component, comprises optical glass, and its upper surface is coated with optical anti-reflective film, lower surface is formed with cavity, for MEMS optical chip provides bubble-tight micromirror movements space, described cavity upper surface reaches optical surface smoothness requirements, and has been coated with lower optical anti-reflective film;
Second component, comprises MEMS optical chip, and described MEMS optical chip can realize the manipulation to optical signal under the effect of MEMS driver;
Described first component and second component realize Wafer level bonding by silicon on glass bonding, and form independently seal chamber for each MEMS optical chip.
2. the encapsulating structure of the MEMS optical chip based on silicon on glass bonding according to claim 1, it is characterized in that: described MEMS optical chip comprises body silicon substrate, movable cavity, is positioned at described movable cavity and is fixed in the movable optical micro mirror on body silicon substrate, the highly reflecting films being positioned at described movable optical micro mirror surfaces and the electrode pad be arranged at outside described movable cavity by spring beam mechanism, wherein, the body silicon substrate between described electrode pad and movable cavity has exposed silicon face.
3. the encapsulating structure of the MEMS optical chip based on silicon on glass bonding according to claim 2, it is characterized in that: described optical glass is the glass material of applicable silicon on glass bonding, described optical glass is bonded to the exposed silicon face of described body silicon substrate, and the leak rate of the seal chamber formed after bonding is 10
-8~ 10
-10atmcc/s.
4. the encapsulating structure of the MEMS optical chip based on silicon on glass bonding according to claim 3, is characterized in that: after described first component and second component bonding, described electrode pad is positioned at the outside of described seal chamber.
5. the encapsulating structure of the MEMS optical chip based on silicon on glass bonding according to claim 1, is characterized in that: described optical glass is manufactured with strip cavity at the lower surface of the electrode pad of corresponding MEMS optical chip.
6. the encapsulating structure of the MEMS optical chip based on silicon on glass bonding according to claim 1, it is characterized in that: described optical glass is manufactured with TGV structure, the electrode pad position one_to_one corresponding of its position and MEMS optical chip, after first component and second component carry out silicon on glass bonding, the electrode pad of MEMS optical chip is directly caused the upper surface of optical glass by described TGV structure.
7., based on a method for packing for the MEMS optical chip of silicon on glass bonding, it is characterized in that, comprise step:
A) preparation of first component: prepare lower surface and there is cavity optical glass, the logical optical surface of described cavity reaches the requirement of optical surface, with hard mask selectivity evaporation coating method optical anti-reflective film under housing surface evaporation, then optical anti-reflective film on the upper surface evaporation of optical glass;
B) preparation of second component: the disk of the MEMS optical chip adopting MEMS technology to prepare;
C) silicon on glass bonding: adopt silicon on glass bonding technique to carry out aligning bonding, for each MEMS optical chip forms independently seal chamber described first component and second component;
D) electrode is exposed: adopt the wide blade of scribing machine on optical clear matrix, to carry out dicing operation along bonding wafer scribe line, control the scribing degree of depth of scribing machine, the electrode pad of MEMS optical chip unit all in whole bonding wafer is exposed by dicing operation, does not scratch electrode pad;
Or adopt the technique that sandblasts to be removed by the optical clear matrix at electrode pad place, expose electrode pad;
E) chip is separated: adopt the narrow blade of scribing machine, along scribe line, whole bonding wafers is separated into each independently encapsulation unit.
8. the method for packing of the MEMS optical chip based on silicon on glass bonding according to claim 7, it is characterized in that: described MEMS optical chip comprises body silicon substrate, movable cavity, is positioned at described movable cavity and is fixed in the movable optical micro mirror on body silicon substrate, the highly reflecting films being positioned at described movable optical micro mirror surfaces and the electrode pad be arranged at outside described movable cavity by spring beam mechanism, wherein, the body silicon substrate between described electrode pad and movable cavity has exposed silicon face.
9. the method for packing of the MEMS optical chip based on silicon on glass bonding according to claim 8, it is characterized in that: described optical glass is bonded to the exposed silicon face of described body silicon substrate, after described first component and second component bonding, described electrode pad is positioned at the outside of described seal chamber.
10. the method for packing of the MEMS optical chip based on silicon on glass bonding according to claim 7, it is characterized in that: steps A) in, the micromachine processing technology of glass is adopted to go out cavity in the lower surface grinding of described optical glass, and optical polish is carried out to the upper surface of described cavity, to reach the requirement of optical surface.
The method for packing of the 11. MEMS optical chips based on silicon on glass bonding according to claim 10, is characterized in that: steps A) also comprise step: adopt machining grinding, Ultra-Violet Laser processing or sandblasting grinding process in described optical glass corresponding MEMS optical chip electrode pad lower surface processing strip cavity.
The method for packing of the 12. MEMS optical chips based on silicon on glass bonding according to claim 7, is characterized in that: steps A) comprise step:
A-1) first optical glass is provided, processes through hole in the position corresponding with MEMS optical chip of described first optical glass;
A-2) second optical glass is provided, first optical glass and described second optical glass with through hole are carried out bonding, after bond glass, form the optical glass of band cavity.
The method for packing of the 13. MEMS optical chips based on silicon on glass bonding according to claim 12, it is characterized in that: steps A-2) in, first described first optical glass and the second optical glass are carried out pre-bonding, then anneal under a certain pressure, near the softening temperature of glass, allow the first optical glass and the second optical glass bonding be an integral material with some strength.
The method for packing of the 14. MEMS optical chips based on silicon on glass bonding according to claim 7, it is characterized in that: steps A) in be also included in the step that described optical glass makes TGV structure in advance, the position of described TGV structure and the electrode pad position one_to_one corresponding of MEMS optical chip, after first component and second component carry out silicon on glass bonding, the electrode pad of MEMS optical chip is directly caused the upper surface of optical glass by described TGV structure, then do not need to carry out D) step that electrode is exposed.
The method for packing of the 15. MEMS optical chips based on silicon on glass bonding according to claim 7, it is characterized in that: steps A) in, adopt the method for hard mask evaporation to realize the graphical of lower optical anti-reflective film during being coated with of described lower optical anti-reflective film, and the size of described lower optical anti-reflective film is only a bit larger tham the aperture that optics leads to light.
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