CN111115556A - Packaging method and packaging structure of micro-electro-mechanical system sensor - Google Patents
Packaging method and packaging structure of micro-electro-mechanical system sensor Download PDFInfo
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- CN111115556A CN111115556A CN201911404756.1A CN201911404756A CN111115556A CN 111115556 A CN111115556 A CN 111115556A CN 201911404756 A CN201911404756 A CN 201911404756A CN 111115556 A CN111115556 A CN 111115556A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 104
- 238000000034 method Methods 0.000 title claims abstract description 40
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 102
- 239000003990 capacitor Substances 0.000 claims abstract description 60
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 56
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 56
- 238000009713 electroplating Methods 0.000 claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 claims abstract description 30
- 238000007747 plating Methods 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims description 26
- 239000010931 gold Substances 0.000 claims description 16
- 229910052737 gold Inorganic materials 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 abstract description 7
- 230000007797 corrosion Effects 0.000 abstract description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 5
- 239000007788 liquid Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 139
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 238000010586 diagram Methods 0.000 description 9
- 238000007736 thin film deposition technique Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
Abstract
The invention discloses a packaging method and a packaging structure of a micro electro mechanical system sensor. The method comprises the following steps: sequentially arranging a first photoresist structure and a first electrode layer on an upper cover plate, removing the first photoresist structure and the first electrode layer covering the first photoresist structure to obtain a first packaging electrode structure and a first capacitor electrode structure, and manufacturing a first bonding structure; manufacturing a second packaging electrode structure and a second capacitor electrode structure on the lower cover plate; manufacturing a conductive aluminum layer on the upper surface of the lower cover plate, wherein the conductive aluminum layer covers the second packaging electrode structure, the second capacitor electrode structure and the upper surface of the lower cover plate; corroding the conductive aluminum layer to obtain an electroplating area, electroplating a second bonding structure in the electroplating area, and removing the residual conductive aluminum layer; and aligning the first bonding structure to the second bonding structure for bonding packaging. The technical scheme of the invention can solve the problem of packaging failure caused by preferential corrosion of electrolytic tin plating when the electrode layer is corroded by the corrosive liquid.
Description
Technical Field
The invention relates to the technical field of electronic device packaging, in particular to a packaging method and a packaging structure of a micro-electro-mechanical system sensor.
Background
The MEMS (Micro Electro Mechanical Systems ) capacitive sensor is a capacitive plate manufactured based on the MEMS process, and the MEMS sensor converts capacitance change according to external environment change, thereby implementing electrical signal conversion of the sensor.
At present, the packaging mode of the MEMS sensor usually adopts gold-tin bonding packaging, but in the packaging process, since the electrode layer and the electrolytic tinning are sequentially manufactured, and then the electrode layer is corroded by a wet method to obtain the electrode structure, when the electrode layer is corroded by the wet method, the electrolytic tinning is often corroded by a corrosion solution preferentially, which causes packaging failure.
The above is only for the purpose of assisting understanding of the technical aspects of the present invention, and does not represent an admission that the above is prior art.
Disclosure of Invention
The invention mainly aims to provide a packaging method and a packaging structure of a micro-electro-mechanical system sensor, aiming at solving the problem of packaging failure caused by preferential corrosion of electrolytic tin plating when a corrosion solution corrodes an electrode layer.
In order to achieve the above object, the present invention provides a method for packaging a mems sensor, comprising the steps of:
arranging a first photoresist structure on the lower surface of the upper cover plate, wherein the first photoresist structure partially covers the upper cover plate;
depositing a first electrode layer on the lower surface of the upper cover plate, wherein the first electrode layer coats the first photoresist structure and the upper cover plate;
removing the first photoresist structure and a first electrode layer covering the first photoresist structure to obtain a first packaging electrode structure and a first capacitor electrode structure, and manufacturing a first bonding structure on the lower surface of the first packaging electrode structure;
manufacturing a second packaging electrode structure on the upper surface of the lower cover plate corresponding to the first packaging electrode structure, and manufacturing a second capacitor electrode structure corresponding to the first capacitor electrode structure;
manufacturing a conductive aluminum layer on the upper surface of the lower cover plate, wherein the conductive aluminum layer coats the second packaging electrode structure, the second capacitor electrode structure and the upper surface of the lower cover plate;
corroding the conductive aluminum layer to obtain an electroplating area exposing the second packaging electrode structure, electroplating a second bonding structure in the electroplating area, and removing the residual conductive aluminum layer;
and aligning the first bonding structure of the upper cover plate to the second bonding structure of the lower cover plate, and performing bonding packaging.
Optionally, depositing a first electrode layer on the lower surface of the upper cover plate, where the first electrode layer encapsulates the first photoresist and the upper cover plate, includes:
depositing a first adhesion layer on the lower surface of the upper cover plate, wherein the first adhesion layer coats the first photoresist structure and the upper cover plate;
and depositing a first seed layer on the lower surface of the first adhesion layer.
Optionally, the first adhesion layer is a titanium layer or a chromium layer; and/or the first seed layer is a gold layer.
Optionally, the step of fabricating a second package electrode structure on the upper surface of the lower cover plate corresponding to the first package electrode structure, and fabricating the second capacitor electrode structure corresponding to the first capacitor electrode structure, includes:
arranging a second photoresist structure on the upper surface of the lower cover plate, wherein the second photoresist structure partially covers the lower cover plate;
depositing a second electrode layer on the upper surface of the lower cover plate, wherein the second electrode layer coats the second photoresist structure and the lower cover plate;
and removing the second photoresist structure and a second electrode layer coating the second photoresist structure to obtain a second packaging electrode structure and a second capacitor electrode structure, wherein the second packaging electrode structure corresponds to the first packaging electrode structure, and the second capacitor electrode structure corresponds to the first capacitor electrode structure.
Optionally, the depositing a second electrode layer on the upper surface of the lower cover plate, where the second electrode layer covers the second photoresist structure and the lower cover plate, includes:
depositing a second adhesion layer on the upper surface of the lower cover plate, wherein the second adhesion layer coats the second photoresist structure and the upper surface of the lower cover plate;
and depositing a second seed layer on the upper surface of the second adhesion layer.
Optionally, before the step of etching the conductive aluminum layer to obtain an electroplating region exposing the second package electrode structure, electroplating the second bonding structure in the electroplating region, and removing the remaining conductive aluminum layer, the method further includes:
arranging a third photoresist structure on the upper surface of the conductive aluminum layer, wherein the third photoresist structure partially covers the conductive aluminum layer;
corroding the conductive aluminum layer to obtain an electroplating area exposing the second packaging electrode structure, electroplating a second bonding structure in the electroplating area, and removing the residual conductive aluminum layer, wherein the steps comprise:
corroding the conductive aluminum layer which is not coated by the third photoresist structure to obtain an electroplating area exposing the second packaging electrode structure;
and electroplating a second bonding structure in the electroplating region, and removing the third photoresist structure and the residual conductive aluminum layer.
Optionally, the step of removing the first photoresist structure and the first electrode layer covering the first photoresist structure to obtain a first package electrode structure and a first capacitor electrode structure, and manufacturing a first bonding structure on the lower surface of the first package electrode structure includes:
removing the first photoresist structure and the first electrode layer covering the first photoresist structure to obtain two first packaging electrode structures and a first capacitor electrode structure, wherein the two first packaging electrodes are respectively positioned at two sides of the first capacitor electrode structure;
and manufacturing a first bonding structure on the lower surface of each first packaging electrode structure.
Optionally, one of the first bonding structure and the second bonding structure is a gold bonding structure, and the other is a tin bonding structure;
the step of aligning the first bonding structure of the upper cover plate to the second bonding structure of the lower cover plate for bonding and packaging comprises:
and heating and pressing the upper cover plate and the lower cover plate, and melting and cooling the first bonding structure and the second bonding structure to form the gold-tin bonding package.
Optionally, one of the upper cover plate and the lower cover plate is a glass plate, and the other is a silicon substrate.
The invention also provides a packaging structure of the micro-electro-mechanical system sensor, which is manufactured by the packaging method.
The technical scheme includes that a first photoresist structure is manufactured on the lower surface of an upper cover plate, the upper cover plate is partially covered by the first photoresist structure, a first electrode layer is deposited on the lower surface of the upper cover plate, and the first electrode layer covers the first photoresist structure and the upper cover plate; then removing the first photoresist structure and a first electrode layer coating the photoresist structure to obtain a first packaging electrode structure and a first capacitor electrode structure, manufacturing a first bonding structure on the lower surface of the first packaging electrode structure, manufacturing a second packaging electrode structure on the upper surface of the lower cover plate corresponding to the first packaging electrode structure, manufacturing a second capacitor electrode structure corresponding to the first capacitor electrode structure, and manufacturing a conductive aluminum layer on the upper surface of the lower cover plate, wherein the conductive aluminum layer covers the second packaging electrode structure, the second capacitor electrode structure and the upper surface of the lower cover plate; then, corroding the conductive aluminum layer to obtain an electroplating area exposing the second packaging electrode structure, and electroplating a second bonding structure in the electroplating area; then removing the residual conductive aluminum layer; and finally, aligning the first bonding structure of the upper cover plate to the second bonding structure of the lower cover plate, and performing bonding packaging to complete the bonding packaging of the MEMS sensor. Because the technical scheme of the invention is to manufacture the electrode structure first and then manufacture the bonding structure, the condition that the electrolytic tinning is preferentially corroded by the corrosive liquid when the electrode structure is manufactured can be effectively avoided. In addition, the packaging method is simple and effective to operate, and can ensure the stability and reliability of the packaging structure of the MEMS sensor.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an embodiment of a MEMS sensor package structure according to the present invention;
FIG. 2 is a schematic flow chart illustrating a process of packaging MEMS sensors according to an embodiment of the present invention;
FIG. 3 is a flow chart illustrating steps of a method for packaging a MEMS sensor according to another embodiment of the present invention;
FIG. 4 is a flowchart illustrating a detailed step of step S20 in FIG. 2;
FIG. 5 is a schematic structural diagram after step S30 in FIG. 2;
FIG. 6 is a flowchart illustrating a detailed step of step S40 in FIG. 2;
FIG. 7 is a flowchart illustrating a detailed step of step S42 in FIG. 6;
FIG. 8 is a schematic diagram of the middle structure of step S41 in FIG. 6;
fig. 9 is a schematic structural diagram after step S41 in fig. 6;
fig. 10 is a schematic structural diagram after step S42 in fig. 6;
FIG. 11 is a flowchart illustrating a detailed step of step S30 in FIG. 2;
fig. 12 is a schematic structural diagram after step S40 in fig. 2;
fig. 13 is a schematic structural diagram after step S50 in fig. 2;
fig. 14 is a schematic structural diagram after step S61 in fig. 2;
fig. 15 is a schematic structural diagram after step S62 in fig. 3.
The reference numbers illustrate:
| reference numerals | Name (R) | Reference numerals | Name (R) | |
| 100 | |
211 | Second |
|
| 10 | Upper cover plate | 212 | A |
|
| 11 | First |
213 | Second |
|
| 12 | First |
22 | Second |
|
| 13 | |
23 | Second |
|
| 20 | |
24 | |
|
| 20a | |
25 | Third |
|
| | Silicon layer | 25a | |
|
| 21 | Second |
26 | Second bonding structure |
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are only for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "connected," "secured," and the like are to be construed broadly, and for example, "secured" may be a fixed connection, a removable connection, or an integral part; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In addition, the technical solutions in the embodiments of the present invention may be combined with each other, but it must be based on the realization of those skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination of technical solutions should not be considered to exist, and is not within the protection scope of the present invention.
Referring to fig. 1 and fig. 2, a method for packaging a mems sensor is provided. The MEMS sensor is called MEMS sensor for short, generally, the MEMS sensor has a small size, and the internal structure is generally in the micrometer or even nanometer level, the MEMS sensor includes an upper cover plate 10 and a lower cover plate 20 disposed below the upper cover plate 10, and the upper cover plate 10 and the lower cover plate 20 are used to support and protect the internal structure of the MEMS.
In an embodiment of the present invention, the packaging method includes the following steps:
step S10 is to provide a first photoresist structure on the lower surface of the upper cover plate 10, and the first photoresist structure partially covers the upper cover plate 10.
Specifically, a first photoresist layer is uniformly coated on the lower surface of the upper cover plate 10, and the first photoresist layer is subjected to photoetching by using an alignment process to obtain a first photoresist structure, wherein the first photoresist structure is a split structure distributed at intervals and partially covers the lower surface of the upper cover plate 10.
Step S20, depositing a first electrode layer on the lower surface of the upper cover plate 10, where the first electrode layer covers the first photoresist structure and the upper cover plate 10.
Specifically, a first electrode layer is deposited on the lower surface of the upper cover plate 10 by using a patterned thin film deposition technique, and the first electrode layer covers the first photoresist structure and the surface of the upper cover plate 10, where the deposition width and thickness of the first electrode layer can be adjusted according to the production process and product design.
Step S30, removing the first photoresist structure and the first electrode layer covering the first photoresist structure to obtain a first package electrode structure 11 and a first capacitor electrode structure 12, and fabricating a first bonding structure 13 on the lower surface of the first package electrode structure 11.
Specifically, the first photoresist structure is removed by using an organic solvent, so that the first photoresist structure coated on the first photoresist structure can be removed, and only the electrode structures partially covering the surface of the upper cover plate 10, that is, the first package electrode structure 11 and the first capacitor electrode structure 12, remain. In addition, the organic solvent does not preferentially corrode the electroplated tin, so that the situation that the electroplated tin is preferentially corroded by the corrosive liquid when the electrode structure is manufactured can be effectively avoided. And then electroplating a first bonding structure 13 on the lower surface of the first package electrode structure 11, wherein the first bonding structure 13 can be a gold bonding structure or a tin bonding structure.
It should be noted that, the number of the first package electrode structures 11 is usually two, the number of the first capacitor electrode structures 12 is one, two first package electrode structures 11 and one first capacitor electrode structure 12 are disposed at an interval, and the two first package electrode structures 11 are respectively disposed on two sides of the first capacitor electrode structure 12.
In step S40, a second package electrode structure 21 is formed on the upper surface of the lower cover plate 20 corresponding to the first package electrode structure 11, and a second capacitor electrode structure 23 is formed corresponding to the first capacitor electrode structure 12.
Referring to fig. 1 and 2, the second package electrode structure 21 corresponds to the first package electrode structure 11, and generally, the size and material of the two are the same; the second capacitor electrode structure 23 corresponds to the first capacitor electrode structure 12, and both have the same size and material. It should be noted that, the manufacturing method of the second package electrode structure 21 and the second capacitor electrode structure 23 may be the same as the manufacturing method of the first package electrode structure 11 and the first capacitor electrode structure 12, and specifically refer to the above operations, it may also be obtained by combining the patterned thin film deposition technique with the wet etching process, that is, the second package electrode structure 21 and the second capacitor electrode structure 23 can also be obtained by depositing the electrode layer by using the patterned thin film deposition technique and then etching and etching the electrode layer by using the wet etching process.
Step S50, a conductive aluminum layer 24 is formed on the upper surface of the lower cover plate 20, and the conductive aluminum layer 24 covers the second package electrode structure 21, the second capacitor electrode structure 23, and the upper surface of the lower cover plate 20.
Referring to fig. 2 and 13, a conductive aluminum layer 24 is deposited on the upper surface of the lower cover plate 20 by using a metal thin film technique, and the conductive aluminum layer 24 completely covers the second package electrode structure 21, the second capacitor electrode structure 23 and the upper surface of the lower cover plate 20. The conductive aluminum layer 24 is provided to facilitate subsequent operations of electroplating the second bonding structure 26.
Step S60, etching the conductive aluminum layer 24 to obtain a plating region 25a exposing the second package electrode structure 21, plating a second bonding structure 26 in the plating region 25a, and removing the remaining conductive aluminum layer 24.
Referring to fig. 2, 14 and 15, the conductive aluminum layer 24 is first etched corresponding to the second package electrode structure 21 to obtain a plating area 25a, and the plating area 25a exposes the corresponding second package electrode structure 21. Next, electroplating of the second bonding structure 26 is performed in the electroplating region 25a, and the second bonding structure 26 is used for bonding connection with the first bonding structure 13. It will be appreciated that the plated area 25a corresponds to the first bond structure 13 and is sized accordingly. And then removing the residual conductive aluminum layer 24, wherein the conductive aluminum layer 24 is generally removed by adopting a sodium hydroxide solution, and the electrolytic tinning cannot be preferentially corroded by the sodium hydroxide solution, so that the situation that the electrolytic tinning is preferentially corroded by the corrosion solution when the electrode structure is manufactured can be effectively avoided.
Step S70, aligning the first bonding structure 13 of the upper cover plate 10 with the second bonding structure 26 of the lower cover plate 20, and performing bonding encapsulation.
Referring to fig. 1 and 2, the first bonding structure 13 is aligned with the second bonding structure 26, and the first bonding structure 13 and the second bonding structure 26 are bonded together by means of pressing and heating, so that the bonding package of the MEMS sensor is completed.
Therefore, it can be understood that, in the technical solution of the present invention, first, a first photoresist structure is fabricated on the lower surface of the upper cover plate 10, the first photoresist structure partially covers the upper cover plate 10, and a first electrode layer is deposited on the lower surface of the upper cover plate 10, and the first electrode layer covers the first photoresist structure and the upper cover plate 10; then, removing the first photoresist structure and the first electrode layer covering the photoresist structure to obtain a first packaging electrode structure 11 and a first capacitor electrode structure 12, and making a first bonding structure 13 on the lower surface of the first packaging electrode structure 11, then making a second packaging electrode structure 21 on the upper surface of the lower cover plate 20 corresponding to the first packaging electrode structure 11, making a second capacitor electrode structure 23 corresponding to the first capacitor electrode structure 12, and making a conductive aluminum layer 24 on the upper surface of the lower cover plate 20, wherein the conductive aluminum layer 24 covers the second packaging electrode structure 21, the second capacitor electrode structure 23 and the upper surface of the lower cover plate 20; then, etching the conductive aluminum layer 24 to obtain a plating region 25a exposing the second package electrode structure 21, and plating a second bonding structure 26 in the plating region 25 a; the conductive aluminum layer 24 is then removed; finally, the first bonding structure 13 of the upper cover plate 10 is aligned to the second bonding structure 26 of the lower cover plate 20 for bonding packaging, and thus, the bonding packaging of the MEMS sensor can be completed. Because the technical scheme of the invention is to manufacture the electrode structure first and then manufacture the bonding structure, the condition that the electrolytic tinning is preferentially corroded by the corrosive liquid when the electrode structure is manufactured can be effectively avoided. Moreover, the packaging method is simple and effective to operate, and can ensure the stability and reliability of the packaging structure 100 of the MEMS sensor.
Referring to fig. 4 and 5, step S20 includes:
step S21, depositing a first adhesion layer on the lower surface of the upper cover plate 10, wherein the first adhesion layer covers the first photoresist structure and the upper cover plate 10;
step S22, depositing a first seed layer on the lower surface of the first adhesion layer.
Specifically, a first adhesion layer is deposited on the lower surface of the upper cover plate 10 by using a patterned thin film deposition technique, the first adhesion layer covers the surface of the first photoresist structure and the lower surface of the upper cover plate 10, and the deposition width and thickness of the first adhesion layer can be adjusted according to the production process and the product design. Accordingly, a first seed layer is deposited on the lower surface of the first adhesion layer using a patterned thin film deposition technique.
Alternatively, the first adhesion layer is usually a metallic titanium layer or a metallic chromium layer, and the first seed layer is usually a metallic gold layer, which has good conductivity, so that the first bonding structure 13 can be rapidly generated by using gold as the seed layer.
Referring to fig. 6, 8, 9 and 10, step S40 includes:
in step S41, a second photoresist structure 22 is disposed on the upper surface of the lower cover plate 20, and the second photoresist structure 22 partially covers the lower cover plate 20.
Specifically, a second photoresist layer 213 is uniformly coated on the upper surface of the lower cover plate 20, and the second photoresist layer 213 is subjected to photolithography by using an overlay process to obtain a second photoresist structure 22, where the second photoresist structure 22 is a split structure distributed at intervals and partially covers the upper surface of the lower cover plate 20.
Step S42, depositing a second electrode layer on the upper surface of the lower cover plate 20, wherein the second electrode layer covers the second photoresist structure 22 and the lower cover plate 20.
Specifically, a second electrode layer is deposited on the upper surface of the lower cover plate 20 by using a patterned thin film deposition technique, the second electrode layer covers the second photoresist structure 22 and the upper surface of the lower cover plate 20 not covered by the second photoresist structure 22, where the material of the second electrode layer is generally the same as that of the first electrode layer, and the deposition width and thickness of the second electrode layer can be adjusted according to the production process and the product design.
Step S43, removing the second photoresist structure 22 and the second electrode layer covering the second photoresist structure 22 to obtain a second package electrode structure 21 and a second capacitor electrode structure 23, where the second package electrode structure 21 corresponds to the first package electrode structure 11, and the second capacitor electrode structure 23 corresponds to the first capacitor electrode structure 12.
Specifically, the organic solvent is used as the second photoresist structure 22, so that the second electrode layer coated on the second photoresist structure 22 can be removed at the same time, and only part of the electrode structures coated on the upper surface of the lower cover plate 20 are left, namely, the second encapsulation electrode structure 21 and the second capacitor electrode structure 23, the second encapsulation electrode structure 21 corresponds to the first encapsulation electrode structure 11, and the sizes of the two are matched, and the second capacitor electrode structure 23 corresponds to the first capacitor electrode structure 12, and the sizes of the two are matched.
Referring to fig. 7 and 10, step S42 includes:
step S421, depositing a second adhesion layer 211 on the upper surface of the lower cover plate 20, where the second adhesion layer 211 covers the second photoresist structure 22 and the upper surface of the lower cover plate 20;
in step S422, a second seed layer 212 is deposited on the upper surface of the second adhesion layer 211.
Specifically, a second adhesion layer 211 is deposited on the upper surface of the lower cover plate 20 by using a patterned thin film deposition technique, the second adhesion layer 211 covers the surface of the second photoresist structure 22 and the upper surface of the lower cover plate 20, and the deposition width and thickness of the second adhesion layer 211 can be adjusted according to the production process and the product design. Accordingly, the second seed layer 212 is deposited on the lower surface of the second adhesive layer 211 using a patterned thin film deposition technique.
It should be noted that the second adhesion layer 211 is also usually a metallic titanium layer or a metallic chromium layer, and the second seed layer 212 is also usually a metallic gold layer, so that gold has good conductivity, and the first bonding structure 13 can be rapidly generated by using gold as the seed layer.
Referring to fig. 3 and 14, in an embodiment of the present invention, before the step S60, the method further includes:
step S50a, a third photoresist structure 25 is disposed on the upper surface of the conductive aluminum layer 24, and the third photoresist structure 25 partially covers the conductive aluminum layer 24.
Specifically, a third photoresist layer is uniformly coated on the upper surface of the conductive aluminum layer 24 to serve as a protection region of the electroless plating second bonding structure 26 region, and the third photoresist layer is subjected to photoetching by using an alignment process to obtain a third photoresist structure 25, wherein the third photoresist structure 25 is a split structure distributed at intervals and partially covers the conductive aluminum layer 24.
Accordingly, referring to fig. 3, 14 and 15, step S60 includes:
in step S61, the conductive aluminum layer 24 not covered by the third photoresist structure 25 is etched to obtain the plating region 25a exposing the second package electrode structure 21.
Specifically, the conductive aluminum layer 24 not covered by the third photoresist structure 25 is completely etched by a wet etching process, and the conductive aluminum layer 24 is usually removed by a sodium hydroxide solution, so that the plating region 25a exposing the second package electrode structure 21 can be obtained for subsequent plating of the second bonding structure.
Step S62, electroplating the second bonding structure 26 in the electroplating region 25a, and removing the third photoresist structure 25 and the remaining conductive aluminum layer 24.
Electroplating the second bonding structure 26 in the electroplating area 25a by using an electroplating process, wherein the second bonding structure 26 can be a tin bonding structure or a gold bonding structure, and is connected with the first bonding structure 13 through gold-tin bonding, then removing the third photoresist structure 25 by using an organic solvent, and removing the residual conductive aluminum layer 24 by using a sodium hydroxide solution, wherein neither the organic solvent nor the sodium hydroxide solution can cause corrosion influence on the tin bonding structure, so that the packaging effectiveness and reliability of the MEMS sensor can be ensured.
Referring to fig. 1 and 11, in an embodiment of the present invention, the step S30 includes:
step S31, removing the first photoresist structure and the first electrode layer covering the first photoresist structure to obtain two first package electrode structures 11 and one first capacitor electrode structure 12, where the two first package electrodes are located on two sides of the first capacitor electrode structure 12 respectively;
in step S32, a first bonding structure 13 is formed on the lower surface of each first package electrode structure 11.
The number of the first packaging electrode structures 11 is two, the two first packaging electrode structures 11 are respectively arranged at two sides of the first capacitor electrode structure 12, and the lower surface of each first packaging electrode structure 11 is plated with a first bonding structure 13; correspondingly, the number of the second package electrode structures 21 is also two, the two second package electrode structures 21 are disposed corresponding to the two first package electrode structures 11, and the upper surface of each second package electrode structure 21 is plated with one second bonding structure 26. In this way, when bonding packaging is performed, the two first package electrode structures 11 of the upper cover plate 10 are aligned to the two second package electrode structures 21 of the lower cover plate 20, and bonding is performed, so that bonding packaging of the MEMS sensor can be completed.
Referring to fig. 1 and 3, in an embodiment of the present invention, the first bonding structure 13 is a gold bonding structure, the second bonding structure 26 is a tin bonding structure, and the step S70 includes:
step S71, heating and pressing the upper cover plate 10 and the lower cover plate 20, melting and cooling the first bonding structure 13 and the second bonding structure 26, and forming a gold-tin bonding package
Specifically, the gold bonding structure of the lower cover plate 20 and the tin bonding structure of the upper cover plate 10 are aligned by pressing and heating, and after melting and bonding, cooling is performed, so that a gold-tin bonding package can be formed, that is, the bonding package of the MEMS sensor is realized.
Here, the following may be also possible: the first bonding structure 13 is a tin bonding structure and the second bonding structure 26 is a gold bonding structure. And because the seed layer in the packaging electrode structure is a gold layer, the gold bonding structure can be omitted, and the seed layer in the packaging electrode structure and the tin bonding structure are directly adopted for bonding and packaging.
Referring to fig. 1 and 8 again, one of the upper cover plate 10 and the lower cover plate 20 is a glass plate, and the other is a silicon substrate.
Generally, the upper cover plate 10 is a glass plate, the lower cover plate 20 is a silicon substrate, the silicon substrate includes two silicon dioxide layers 20a and a silicon layer 20b, and the two silicon dioxide layers 20a are respectively disposed on two surfaces of the silicon layer 20 b. Of course, the upper cover plate 10 may be a silicon substrate and the lower cover plate 20 may be a glass plate.
The invention further provides a packaging structure 100 of the mems sensor, wherein the packaging structure 100 is manufactured by the packaging method as described above.
It can be understood that, because the technical scheme of the invention is to manufacture the electrode structure first and then manufacture the bonding structure, the situation that the electrolytic tin plating is preferentially corroded by the corrosion solution when the electrode structure is manufactured can be effectively avoided. Moreover, the stability and reliability of the packaging structure 100 of the MEMS sensor manufactured by the packaging method are good.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. A packaging method of a micro electro mechanical system sensor is characterized in that the micro electro mechanical system sensor comprises an upper cover plate and a lower cover plate arranged below the upper cover plate, and the packaging method comprises the following steps:
arranging a first photoresist structure on the lower surface of the upper cover plate, wherein the first photoresist structure partially covers the upper cover plate;
depositing a first electrode layer on the lower surface of the upper cover plate, wherein the first electrode layer coats the first photoresist structure and the upper cover plate;
removing the first photoresist structure and a first electrode layer covering the first photoresist structure to obtain a first packaging electrode structure and a first capacitor electrode structure, and manufacturing a first bonding structure on the lower surface of the first packaging electrode structure;
manufacturing a second packaging electrode structure on the upper surface of the lower cover plate corresponding to the first packaging electrode structure, and manufacturing a second capacitor electrode structure corresponding to the first capacitor electrode structure;
manufacturing a conductive aluminum layer on the upper surface of the lower cover plate, wherein the conductive aluminum layer coats the second packaging electrode structure, the second capacitor electrode structure and the upper surface of the lower cover plate;
corroding the conductive aluminum layer to obtain an electroplating area exposing the second packaging electrode structure, electroplating a second bonding structure in the electroplating area, and removing the residual conductive aluminum layer;
and aligning the first bonding structure of the upper cover plate to the second bonding structure of the lower cover plate, and performing bonding packaging.
2. The method for packaging a mems sensor according to claim 1, wherein the step of depositing a first electrode layer on the lower surface of the upper cover plate, the first electrode layer encapsulating the first photoresist and the upper cover plate, comprises:
depositing a first adhesion layer on the lower surface of the upper cover plate, wherein the first adhesion layer coats the first photoresist structure and the upper cover plate;
and depositing a first seed layer on the lower surface of the first adhesion layer.
3. The packaging method of the mems sensor as recited in claim 2, wherein the first adhesion layer is a titanium layer or a chromium layer;
and/or the first seed layer is a gold layer.
4. The method of packaging the mems sensor as recited in claim 1, wherein the step of fabricating a second package electrode structure on the top surface of the lower cover plate corresponding to the first package electrode structure and the second capacitor electrode structure corresponding to the first capacitor electrode structure comprises:
arranging a second photoresist structure on the upper surface of the lower cover plate, wherein the second photoresist structure partially covers the lower cover plate;
depositing a second electrode layer on the upper surface of the lower cover plate, wherein the second electrode layer coats the second photoresist structure and the lower cover plate;
and removing the second photoresist structure and a second electrode layer coating the second photoresist structure to obtain a second packaging electrode structure and a second capacitor electrode structure, wherein the second packaging electrode structure corresponds to the first packaging electrode structure, and the second capacitor electrode structure corresponds to the first capacitor electrode structure.
5. The method of packaging a mems sensor as recited in claim 4, wherein the step of depositing a second electrode layer on the top surface of the lower cover plate, the second electrode layer encapsulating the second photoresist structure and the lower cover plate comprises:
depositing a second adhesion layer on the upper surface of the lower cover plate, wherein the second adhesion layer coats the second photoresist structure and the upper surface of the lower cover plate;
and depositing a second seed layer on the upper surface of the second adhesion layer.
6. The packaging method of the mems sensor as recited in any one of claims 1 to 5, wherein the step of etching the conductive aluminum layer to obtain a plating region exposing the second package electrode structure, plating the second bonding structure in the plating region, and removing the remaining conductive aluminum layer further comprises:
arranging a third photoresist structure on the upper surface of the conductive aluminum layer, wherein the third photoresist structure partially covers the conductive aluminum layer;
corroding the conductive aluminum layer to obtain an electroplating area exposing the second packaging electrode structure, electroplating a second bonding structure in the electroplating area, and removing the residual conductive aluminum layer, wherein the steps comprise:
corroding the conductive aluminum layer which is not coated by the third photoresist structure to obtain an electroplating area exposing the second packaging electrode structure;
and electroplating a second bonding structure in the electroplating region, and removing the third photoresist structure and the residual conductive aluminum layer.
7. The method for packaging a mems sensor according to any one of claims 1 to 5, wherein the step of removing the first photoresist structure and the first electrode layer covering the first photoresist structure to obtain a first package electrode structure and a first capacitor electrode structure, and forming a first bonding structure on a lower surface of the first package electrode structure comprises:
removing the first photoresist structure and the first electrode layer covering the first photoresist structure to obtain two first packaging electrode structures and a first capacitor electrode structure, wherein the two first packaging electrodes are respectively positioned at two sides of the first capacitor electrode structure;
and manufacturing a first bonding structure on the lower surface of each first packaging electrode structure.
8. The packaging method of the MEMS sensor according to any one of claims 1 to 5, wherein one of the first bonding structure and the second bonding structure is a gold bonding structure, and the other is a tin bonding structure;
the step of aligning the first bonding structure of the upper cover plate to the second bonding structure of the lower cover plate for bonding and packaging comprises:
and heating and pressing the upper cover plate and the lower cover plate, and melting and cooling the first bonding structure and the second bonding structure to form the gold-tin bonding package.
9. The packaging method of MEMS sensor according to any of claims 1 to 5, wherein one of the upper and lower cover plates is a glass plate and the other is a silicon substrate.
10. A package structure of a mems sensor, wherein the package structure is manufactured by the method of any one of claims 1 to 9.
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