CN104743500A - Micro-electromechanical system and preparation method thereof - Google Patents
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- CN104743500A CN104743500A CN201310743095.1A CN201310743095A CN104743500A CN 104743500 A CN104743500 A CN 104743500A CN 201310743095 A CN201310743095 A CN 201310743095A CN 104743500 A CN104743500 A CN 104743500A
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Abstract
The invention relates to a micro-electromechanical system and a preparation method thereof. The method includes: providing a substrate, in which a CMOS device, a pressure sensor bottom electrode and a gyro bottom electrode isolated from each other are formed, and also forming a gyro sacrificial material layer on the gyro bottom electrode; forming a first conductive material layer-second sacrificial material layer-second conductive material layer lamination over the pressure sensor bottom electrode; patterning the second conductive material layer to form a second opening, exposing the second sacrificial material layer, and then removing the second sacrificial material layer so as to form a pressure sensor cavity; forming an MEMS substrate, patterning the MEMS substrate and a first interlayer dielectric layer to form a third opening, exposing the gyro sacrificial material layer and the second conductive material layer respectively; removing the gyro sacrificial material layer to form a gyro structure; and forming a covering layer over the gyro structure so as to form a closed space above the gyro structure.
Description
Technical field
The present invention relates to semiconductor applications, particularly, the present invention relates to a kind of MEMS and preparation method thereof.
Background technology
Along with the development of semiconductor technology, on the market of sensor (motion sensor) series products, smart mobile phone, integrated CMOS and microelectromechanical systems (MEMS) device become most main flow, state-of-the-art technology day by day, and along with the renewal of technology, the developing direction of this kind of transmission sensors product is the size that scale is less, high-quality electric property and lower loss.
Microelectromechanical systems (MEMS) is in volume, power consumption, weight and have fairly obvious advantage in price, so far multiple different sensor has been developed, such as pressure sensor, gyroscope (Gyro), acceleration transducer, inertial sensor and other sensor.
Along with the development of technology, the integrated level of various integrated circuit improves constantly, dimensional requirement for device is also more and more less, such as in smart mobile phone, smart mobile phone function is more and more abundanter, and required sensor also gets more and more, and PCB surface is amassed limited, too much sensor chip must take a lot of area, and cause circuit board size to become large, corresponding mobile phone also becomes heavier.
Multiple sensor is often comprised in the smart mobile phone of prior art, such as containing the sensor such as gyrostatic sensor and barometer, describedly to be mounted on respectively on pcb board containing gyrostatic sensor and air pressure flowmeter sensor two chips, individually arrange, contain the structure of gyrostatic sensor as shown in Figure 1a as described in Figure, the structure of described pressure sensor as shown in Figure 1 b, but need various function height to be integrated in less region in actual applications, obtain the product of complex function, improve the performance (capability) of electronic product, reduce price and convenient consumer use, but two sensors can not integrate in prior art, such two chips need to encapsulate respectively, and account for pcb board area, make mobile phone also size become become greatly heavier.
Also two kinds of sensors or two or more sensors are not made a chips in prior art, cause packaging cost very high, and chip area is also very large, can not meet now for little, clever, skilful demand, therefore need to be improved further, to eliminate the problems referred to above the preparation method of sensor in device.
Summary of the invention
In summary of the invention part, introduce the concept of a series of reduced form, this will further describe in detailed description of the invention part.Summary of the invention part of the present invention does not also mean that the key feature and essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain attempting to determine technical scheme required for protection.
The present invention, in order to overcome current existing problems, provides a kind of preparation method of MEMS, comprising:
There is provided substrate, the gyroscope bottom electrode being formed with cmos device, pressure sensor bottom electrode in described substrate and being isolated from each other, described gyroscope bottom electrode is also formed with gyroscope sacrificial material layer;
Deposit the first interlayer dielectric layer on the substrate and patterning, form the first opening, to expose described pressure sensor bottom electrode;
The lamination of the first conductive material layer-the second sacrificial material layer-the second conductive material layer is formed at described first overthe openings;
Continue deposition first interlayer dielectric layer and be planarized to described second conductive material layer;
Described in patterning, the second conductive material layer forms the second opening, exposes described second sacrificial material layer, then removes described second sacrificial material layer, with mineralization pressure sensor cavities;
In described first interlayer dielectric layer, form the first interconnection structure, be connected to be formed with described gyroscope bottom electrode;
Described first interlayer dielectric layer forms MEMS substrate, and form the second interconnection structure in described MEMS substrate, to be connected with described first interconnection structure;
MEMS substrate described in patterning and described first interlayer dielectric layer, to form the 3rd opening, expose described gyroscope sacrificial material layer and the second conductive material layer respectively;
Remove described gyroscope sacrificial material layer, to form gyroscope arrangement;
Cover layer is formed, to form closed space above described gyroscope arrangement above described gyroscope arrangement.
As preferably, the method forming described lamination is:
Depositing first conductive material layer, to fill described first opening, and is connected with described pressure sensor bottom electrode formation;
Described first conductive material layer deposits the second sacrificial material layer, then depositing second conductive material layer in described second sacrificial material layer;
Then the first conductive material layer, the second sacrificial material layer and described second conductive material layer described in patterning, to form described lamination above described pressure sensor bottom electrode.
As preferably, described gyroscope bottom electrode comprises the first electrode and the second electrode that are isolated from each other and arrange, arranges the gyroscope sacrificial material layer be isolated from each other respectively above described first electrode and described second electrode.
As preferably, while described first conductive material layer deposits the second sacrificial material layer, also in described gyroscope sacrificial material layer, deposit the second sacrificial material layer.
As preferably, described first interconnection structure is silicon through hole.
As preferably, be integrated by the methods combining of bonding between described MEMS substrate and described first interlayer dielectric layer.
As preferably, the methods combining by bonding between described cover layer and described gyroscope arrangement is integrated.
As preferably, after described second interconnection structure of formation, be also included on described second interconnection structure and form metal connecting layer structure, to connect described cover layer.
As preferably, ashing method is selected to remove described gyroscope sacrificial material layer and described second sacrificial material layer.
As preferably, the method forming the second interconnection structure in described MEMS substrate is:
Select MEMS substrate described in deep reaction ion etching, to form the 4th opening;
The sidewall of described 4th opening forms separation layer;
Then deposits conductive material in described 4th opening, to form the second interconnect architecture.
As preferably, described gyroscope sacrificial material layer selects unformed silicon materials;
Described second sacrificial material layer selects unformed silicon materials;
Described first interlayer dielectric layer selects SiO
2;
Described first conductive material layer selects SiGe;
Described second conductive material layer selects SiGe;
Described MEMS substrate selects polysilicon;
Polysilicon, Cu or W is selected in described second interconnection structure.
As preferably, the thickness of described gyroscope sacrificial material layer is 17K dust;
The thickness of described second sacrificial material layer is 3K dust;
The thickness of described first conductive material layer is 5K dust;
The thickness of described second conductive material is 4K dust;
The thickness of described MEMS substrate is 20-50um;
Described tectal thickness is 200um.
Present invention also offers MEMS prepared by a kind of above-mentioned method.
The present invention is in order to solve problems of the prior art, CMOS technology and MEMS are integrated into CMEMS technique, in the process described gyroscope and pressure sensor are merged in a CMOS MEMS technology process, a flow just can be had acceleration transducer and capacitance pressure transducer, simultaneously, significantly reduce cost, and chip integration can bring diminishing of board area.
The advantage of the method for the invention is:
(1) more device is integrated in a less region, more effectively can improve performance and the competitiveness of product, obtain better market prospects.
(2) gyroscope and pressure sensor are integrated in a CMOS MEMS technology process, the cost of semiconductor devices can be reduced further.
(3) uniformity (consistency) of semiconductor devices can be improved further.
Accompanying drawing explanation
Following accompanying drawing of the present invention in this as a part of the present invention for understanding the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining device of the present invention and principle.In the accompanying drawings,
Fig. 1 a-1b is the structural representation of gyroscope and pressure sensor in prior art;
Fig. 2 a-2g is the preparation process schematic diagram of MEMS in the embodiment of the invention;
Preparation technology's flow chart that Fig. 3 is MEMS described in the embodiment of the invention.
Detailed description of the invention
In the following description, a large amount of concrete details is given to provide more thorough understanding of the invention.But, it is obvious to the skilled person that the present invention can be implemented without the need to these details one or more.In other example, in order to avoid obscuring with the present invention, technical characteristics more well known in the art are not described.
In order to thoroughly understand the present invention, by following description, detailed description is proposed, so that the preparation method of MEMS of the present invention to be described.Obviously, the specific details that the technical staff that execution of the present invention is not limited to semiconductor applications has the knack of.Preferred embodiment of the present invention is described in detail as follows, but except these are described in detail, the present invention can also have other embodiments.
Should give it is noted that term used here is only to describe specific embodiment, and be not intended to restricted root according to exemplary embodiment of the present invention.As used herein, unless the context clearly indicates otherwise, otherwise singulative be also intended to comprise plural form.In addition, it is to be further understood that, " comprise " when using term in this manual and/or " comprising " time, it indicates exists described feature, entirety, step, operation, element and/or assembly, but does not get rid of existence or additional other features one or more, entirety, step, operation, element, assembly and/or their combination.
Now, describe in more detail with reference to the accompanying drawings according to exemplary embodiment of the present invention.But these exemplary embodiments can multiple different form be implemented, and should not be interpreted as being only limited to the embodiments set forth herein.Should be understood that, providing these embodiments to be of the present inventionly disclose thorough and complete to make, and the design of these exemplary embodiments fully being conveyed to those of ordinary skill in the art.In the accompanying drawings, for the sake of clarity, exaggerate the thickness in layer and region, and use the element that identical Reference numeral represents identical, thus will omit description of them.
The problem that the packaging cost that pcb board brings is high and pcb board area is large is mounted on respectively in the present invention in order to solve degree of will speed up and barometer two chips in prior art, the technological process of two kinds of chips is combined, a flow just can be had acceleration transducer and capacitance pressure transducer, simultaneously, significantly reduces cost.And chip integration can bring diminishing of board area.
Below in conjunction with accompanying drawing 2a-2f to of the present invention one particularly embodiment be further described.
First, perform step 201 and first substrate 201 is provided, described substrate 201 is formed with cmos device.
Particularly, with reference to Fig. 2 a, form various active device on the semiconductor substrate, such as form cmos device and other active device and/or passive device etc. on the semiconductor substrate, described active device is not limited to a certain.
Wherein said Semiconductor substrate can be at least one in following mentioned material: stacked SiGe (S-SiGeOI), germanium on insulator SiClx (SiGeOI) and germanium on insulator (GeOI) etc. on stacked silicon (SSOI), insulator on silicon, silicon-on-insulator (SOI), insulator.
Perform step 202, in described substrate 201, form the substrate metal layer of patterning, with mineralization pressure sensor base electrode 20 and gyroscope bottom electrode, comprise the first spaced electrode 21 and the second electrode 22.
Particularly, in described substrate, form described substrate metal layer, to form bottom electrode, the method forming substrate metal layer is on the substrate: Semiconductor substrate forms dielectric layer, pattern dielectric layer forms groove, fills metal material in the trench and forms described electrode.In a detailed description of the invention of the present invention, in described substrate 201, such as form the photoresist layer (not shown) of patterning, described photoresist layer forms fluted pattern, then be mask patterning described dielectric layer with described photoresist layer, to form multiple groove in described dielectric layer.
Be positioned at the bottom electrode of middle part as pressure sensor, be positioned at that described pressure sensor bottom electrode side clicks as the splicing ear of top electrodes of described pressure sensor will formed after connecting, for the various devices of described MEMS and bottom are formed electrical connection.
Wherein said first electrode 21 and the second electrode 22 form the battery lead plate in acceleration transducer jointly in conjunction with the conductive material layer formed in subsequent process, for the formation of capacitor.
Wherein, described metal material can select copper, gold, silver, tungsten and other similar materials, preferable alloy copper is as conductive material, can be filled described groove by the method for physical vapor deposition (PVD) method or Cu electroplating (ECP) and be covered described oxide skin(coating), the method for preferred Cu electroplating (ECP) forms described metal material.
Wherein said bottom metal layers comprises the first electrode 21 and the second electrode 22 and pressure sensor bottom electrode 20, to be separated by between described first electrode 21 and the second electrode 22 and pressure sensor bottom electrode 20 setting, but can be completed by a step, realize the compatibility of described two processing steps.
Then perform step 203, substrate 201 and described substrate metal layer form deposition first sacrificial material layer and patterning, to form gyroscope sacrificial material layer 203.
Particularly, with reference to Fig. 2 a, described first sacrificial material layer can be photoresist, SiO
2, N doping silicon carbide layer NDC(Nitrogen dopped Silicon Carbite), SiN layer or amorphous silicon (amorphism-Silicon, A-S), in a detailed description of the invention of the present invention, preferred amorphous silicon (amorphism-Silicon, A-S) is as sacrificial material layer.Wherein, the thickness of described first sacrificial material layer is 17K dust.
After described first sacrificial material layer of deposition, perform planarisation step, flattening method conventional in field of semiconductor manufacture can be used in this step to realize the planarized of surface.The limiting examples of this flattening method comprises mechanical planarization method and chemically mechanical polishing flattening method.Chemically mechanical polishing flattening method is more conventional.
Then sacrificial material layer described in patterning, substrate 201 to form gyroscope sacrificial material layer 203 between described first electrode 21 and the second electrode 22.
Then in described substrate and described gyroscope sacrificial material layer 203, deposit the first interlayer dielectric layer 202, wherein, described first interlayer dielectric layer 202 can be selected and can use such as SiO
2, fluorocarbon (CF), carbon doped silicon oxide (SiOC) or carbonitride of silicium (SiCN) etc.Or, also can be used in the film etc. fluorocarbon (CF) defining SiCN film.Fluorocarbon with fluorine (F) and carbon (C) for main component.
Described in a detailed description of the invention of the present invention, the first interlayer dielectric layer 202 is preferably SiO
2after having deposited described first interlayer dielectric layer 202, perform planarisation step, planarized described first interlayer dielectric layer 202, to described gyroscope sacrificial material layer 203, makes described first interlayer dielectric layer 202 and described gyroscope sacrificial material layer 203 have equal height.
Then the first interlayer dielectric layer 202 described in patterning, to form the first opening above pressure sensor bottom electrode 20 described in described first interlayer dielectric layer 202, to expose described pressure sensor bottom electrode 20.
Perform step 204, deposits conductive material in described first opening and on described first interlayer dielectric layer 202 patterning, to form electrical connection with described pressure sensor bottom electrode 20.
Particularly, depositing first conductive material layer 204 on described first opening and described first interlayer dielectric layer 202 in this step, then the conductive material of both sides above described pressure sensor bottom electrode 20 is removed in etching, to form " T " contact plug, and described pressure sensor bottom electrode 20 forms electrical connection.
As preferably, the first conductive material layer 204 that described conductive material can select this area conventional, in of the present invention one particularly embodiment, be preferably SiGe, the thickness of wherein said first conductive material layer 204 is 5K dust, but is not limited to this numerical value.
Perform step 205, described first conductive material layer 204 deposits the second sacrificial material layer 205, then depositing first conductive material layer 204 again in described second sacrificial material layer 205, to form the structure of conductive material-expendable material-conductive material above described pressure sensor bottom electrode 20, for mineralization pressure sensor capacitance.
Particularly, as shown in Figure 2 b, described first conductive material layer 204 and described gyroscope sacrificial material layer 203 deposit the second sacrificial material layer 205, wherein said second sacrificial material layer 205 can select the material identical with described first sacrificial material layer.The thickness of described second sacrificial material layer is 4K dust.
In of the present invention one particularly embodiment, described first conductive material layer 204 and described gyroscope sacrificial material layer 203 and described first interlayer dielectric layer 202 deposit the second sacrificial material layer 205, then the second sacrificial material layer 205 described in patterning, only retain and be positioned in described first conductive material layer 204 and described gyroscope sacrificial material layer 203, remove described second sacrificial material layer 205 on described first interlayer dielectric layer 202.
Then depositing second conductive material layer 206 in the second sacrificial material layer 205 then on described first conductive material layer 204, as preferably, the material that described second conductive material layer 206 is selected and the first conductive material layer 204 is same.
As further preferred, the thickness of described second conductive material layer 206 is 4K dust.
Perform step 206, continue deposition first interlayer dielectric layer 202, be then planarized to described second conductive material layer 206, wherein, described first interlayer dielectric layer 202 the selection of material and deposition process can with reference to the operations in step 203.
Perform step 207, second conductive material layer 206 described in patterning, to form the second opening, expose the second sacrificial material layer 205 on described first conductive material layer 204, then described second sacrificial material layer 205 is removed, to form cavity between described first conductive material layer 204 and described second conductive material layer 206.Particularly, in this step, the second conductive material layer 206 first above the second sacrificial material layer 205 described in patterning, to form the second opening.
Dry etching conductive material layer can be selected in this step, can CF be selected in described dry etching
4, CHF
3, add N in addition
2, CO
2, O
2in one as etching atmosphere, wherein gas flow is CF
410-200sccm, CHF
310-200sccm, N
2or CO
2or O
210-400sccm, described etching pressure is 30-150mTorr, and etching period is 5-120s, is preferably 5-60s, is more preferably 5-30s.
Then the second sacrificial material layer 205 on described first conductive material layer 204 is removed, with mineralization pressure sensor cavities.
Particularly, as shown in Figure 2 c, in the present invention in order to impact described first conductive material layer 204 while the described sacrificial material layer of removal, the method selecting etching selectivity larger etches.
Dry etching can be selected, reactive ion etching (RIE), ion beam milling, plasma etching and ashing method in the specific embodiment of the invention.As preferably, in of the present invention one particularly embodiment, ashing method is selected to remove described second sacrificial material layer 205.
Remove the second sacrificial material layer 205 mineralization pressure sensor cavities above described first conductive material layer 204 afterwards, wherein, described first conductive material layer 204 is as a battery lead plate of electric capacity, described second conductive material layer 206 is as the another one battery lead plate of electric capacity, the middle cavity formed as the dielectric medium of described electric capacity, to form sensor capacitor.
Perform step 208, above described first electrode 21 and the second electrode 22, in described first interlayer dielectric layer 202, form the first interconnection structure 205.
Particularly, wherein, above described first electrode 21 and the second electrode 22, the first interconnection structure 205 is formed in described first interlayer dielectric layer 202 to form connection.As preferably, described first interconnection structure 205 is preferably silicon through hole.
In of the present invention one particularly embodiment, first the first interlayer dielectric layer 202 described in patterning to form opening in described first interlayer dielectric layer 202, expose described first electrode 21 and the second electrode 22, and the bottom electrode outside described first electrode 21, then at the sidewall of described opening, bottom and described first interlayer dielectric layer 202 on depositing isolation material layer, as preferably, wherein said spacer material layer can select the material identical with described first interlayer dielectric layer 202, then opening described in filled with conductive material is selected, to form silicon through hole, be connected with the second electrode 22 formation with described first electrode 21.
Perform step 209, described first interlayer dielectric layer 202 forms MEMS substrate 207.
Particularly, as shown in Figure 2 d, formation method and the conventional method of described MEMS substrate 207 are different, and non-immediate deposits on described first interlayer dielectric layer 202, but first prepare MEMS substrate 207, then described MEMS substrate 207 and described first interlayer dielectric layer 202 bonding are integrated.
Further, described MEMS substrate 207 is silicon or polysilicon, and as preferably, the thickness of described MEMS substrate 207 is 20-50um.The deposition process of MEMS substrate 207 can be low-pressure chemical vapor deposition (LPCVD), the one in laser ablation deposition (LAD) and epitaxial growth that chemical vapor deposition (CVD) method, physical vapor deposition (PVD) method or ald (ALD) method etc. are formed in the present invention.
Be bonded together by the method for eutectic bond or thermal bonding between described MEMS substrate 207 and described first interlayer dielectric layer 202, described first interlayer dielectric layer 202 is preferably SiO in this embodiment
2, be preferably the method for thermal bonding in this step, use H respectively in this step
2sO
4+ H
2o
2, RCA2, RCA1 cleaning, cleaning process must strictly observe working specification, comprising the control etc. to solution concentration proportioning, heat time, flushing period, to strengthen the hydrophily of two bonding faces..In addition, can silicon/silicon bonding realize the waviness (also claiming flatness) also depending on Si sheet surface, usually need at below 5A.More than guarantee when two conditions, the annealing temperature of 180 DEG C just can ensure larger bond strength.
Perform step 210, in described MEMS substrate 207, form the second interconnection structure be connected to be formed with described first interconnection structure 205.
Particularly, first MEMS substrate 207 described in patterning to form the 3rd opening in described MEMS substrate 207, expose described first interconnection structure, then depositing isolation material layer on the sidewall and described MEMS substrate 207 of described 3rd opening, as preferably, wherein said spacer material layer can select the material identical with described first interlayer dielectric layer 202, then selects the 3rd opening described in filled with conductive material, to form the second interconnection structure, formed with the first interconnection structure and be connected.
Perform step 211, above described second interconnection structure, form metal connecting layer 208.
Particularly, as shown in Figure 2 e, metal connecting layer is formed above described second interconnection structure, concrete grammar for deposit the second interlayer dielectric layer on described MEMS substrate 207, then patterning, exposes described second interconnection structure, then fills metal, contact to be formed with described second interconnection structure, be certainly not limited to this example.
Perform step 212, MEMS substrate 207 described in patterning and described first interlayer dielectric layer 202, to expose described gyroscope sacrificial material layer 203 and described second conductive material layer 206.
Particularly, as shown in figure 2f, deep reaction ion etching (DRIE) method is selected to etch described MEMS substrate 207 and described first interlayer dielectric layer 202, particularly, first on described MEMS substrate 207, organic distribution layer (Organic distribution layer is formed, ODL), siliceous bottom antireflective coating (Si-BARC), the photoresist layer of deposit patterned is gone up described siliceous bottom antireflective coating (Si-BARC), or the photoresist layer of patterning is only formed at described MEMS substrate 207, pattern definition on described photoresist will form the figure of the 4th opening, then with described photoresist layer for mask layer or with the described organic distribution layer of described etching, bottom antireflective coating, the lamination that photoresist layer is formed is that mask etch MEMS substrate 207 forms the 4th opening.
Described opening is positioned at the top of gyroscope sacrificial material layer 203 and described second conductive material layer 206, to expose described gyroscope sacrificial material layer 203 and described second conductive material layer 206, by controlling this etching process, make described etch stop in gyroscope sacrificial material layer 203 and described second conductive material layer 206, wherein said number of openings can be multiple.
In this embodiment, above described second conductive material layer 206, both sides form two mutually isolated the 4th openings, the critical size of described 4th opening is subject to the restriction of described DRIE system, the ratio of width to height of described 4th opening is 1:15, therefore, when described MEMS substrate 105 thickness is 50um, the critical size of described opening is about 3.3um.As preferably, described opening there is vertical section, the angle of described opening sidewalls and bottom surface is 89 °-91 °.
Gas hexa-fluoride (SF is selected in described deep reaction ion etching (DRIE) step
6) as process gas, apply radio-frequency power supply, make hexa-fluoride react air inlet and form high ionization, controlling operating pressure in described etching step is 20mTorr-8Torr, frequently power is 600W, 13.5MHz, and Dc bias can continuous control in-500V-1000V, ensure the needs of anisotropic etching, select the etching photoresistance Selection radio that deep reaction ion etching (DRIE) can keep very high.The equipment that described deep reaction ion etching (DRIE) system can select ability conventional, is not limited to a certain model.
Perform step 213, remove described gyroscope sacrificial material layer 203, to form gyroscope arrangement.
Particularly, as Fig. 2 f, in the present invention in order to impact described bottom electrode while the described gyroscope sacrificial material layer 203 of removal, the method selecting etching selectivity larger etches, and ashing method can be selected in the specific embodiment of the invention to remove described gyroscope sacrificial material layer 203
Above described first electrode 21 and the second electrode 22, cavity is formed after removing described gyroscope sacrificial material layer 203, and cantilever beam and transportable mass is formed above described first electrode 21 and the second electrode 22, described cantilever beam is connected in fulcrum with described MEMS substrate 207.
Perform step 214, above described gyroscope arrangement, form the cover layer 209 of isolation, between described cover layer 209 and described sensor construction, form closed space.
Particularly, described cover layer 209 can be silicon or polysilicon, one in low-pressure chemical vapor deposition (LPCVD), laser ablation deposition (LAD) and selective epitaxy growth (SEG) that the deposition process of described cover layer 209 can select chemical vapor deposition (CVD) method, physical vapor deposition (PVD) method or ald (ALD) method etc. to be formed, as preferably, select physical vapor deposition (PVD) method in the present invention.
Wherein, described cover layer 209 does not directly contact with described cavity, described MEMS substrate 207, has certain distance and space, form closed space between described cover layer and described sensor construction between described cover layer 209 and described cavity.The two ends of described cover layer 209 connect described metal connecting layer 209, to form connection.
As preferably, the formation method of described cover layer 209 is, first sedimentary cover material layer, then patterning, forms groove at the middle part of described covering layer material layer, forms column structure, and form extraction electrode in groove both sides on described column structure.
Then be bonded to by described cover layer in the contact hole on described second interlayer dielectric layer, described associated methods can select the method for eutectic bond.
The present invention is in order to solve problems of the prior art, CMOS technology and MEMS are integrated into CMEMS technique, in the process described gyroscope and pressure sensor are merged in a CMOS MEMS technology process, a flow just can be had acceleration transducer and capacitance pressure transducer, simultaneously, significantly reduce cost, and chip integration can bring diminishing of board area.
The advantage of the method for the invention is:
(1) more device is integrated in a less region, more effectively can improve performance and the competitiveness of product, obtain better market prospects.
(2) gyroscope and pressure sensor are integrated in a CMOS MEMS technology process, the cost of semiconductor devices can be reduced further.
(3) uniformity (consistency) of semiconductor devices can be improved further.
Fig. 3 is preparation technology's flow chart of the electric system of single chip micro-computer described in the embodiment of the invention, specifically comprises the following steps:
Step 201 provides substrate, the gyroscope bottom electrode being formed with cmos device, pressure sensor bottom electrode in described substrate and being isolated from each other, and described gyroscope bottom electrode is also formed with gyroscope sacrificial material layer;
Step 202 deposits the first interlayer dielectric layer and patterning on the substrate, forms the first opening, to expose described pressure sensor bottom electrode;
Step 203 forms the lamination of the first conductive material layer-the second sacrificial material layer-the second conductive material layer at described first overthe openings;
Step 204 continues deposition first interlayer dielectric layer and is planarized to described second conductive material layer;
Described in step 205 patterning, the second conductive material layer forms the second opening, exposes described second sacrificial material layer, then removes described second sacrificial material layer, with mineralization pressure sensor cavities;
Step 206 forms the first interconnection structure in described first interlayer dielectric layer, is connected to be formed with described gyroscope bottom electrode;
Step 207 forms MEMS substrate on described first interlayer dielectric layer, and forms the second interconnection structure in described MEMS substrate, to be connected with described first interconnection structure;
MEMS substrate described in step 208 patterning and described first interlayer dielectric layer, to form the 3rd opening, expose described gyroscope sacrificial material layer and the second conductive material layer respectively;
Step 209 removes described gyroscope sacrificial material layer, to form gyroscope arrangement;
Step 210 forms cover layer above described gyroscope arrangement, to form closed space above described gyroscope arrangement.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just for the object of illustrating and illustrate, and is not intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, more kinds of variants and modifications can also be made according to instruction of the present invention, within these variants and modifications all drop on the present invention's scope required for protection.Protection scope of the present invention defined by the appended claims and equivalent scope thereof.
Claims (13)
1. a preparation method for MEMS, comprising:
There is provided substrate, the gyroscope bottom electrode being formed with cmos device, pressure sensor bottom electrode in described substrate and being isolated from each other, described gyroscope bottom electrode is also formed with gyroscope sacrificial material layer;
Deposit the first interlayer dielectric layer on the substrate and patterning, form the first opening, to expose described pressure sensor bottom electrode;
The lamination of the first conductive material layer-the second sacrificial material layer-the second conductive material layer is formed at described first overthe openings;
Continue deposition first interlayer dielectric layer and be planarized to described second conductive material layer;
Described in patterning, the second conductive material layer forms the second opening, exposes described second sacrificial material layer, then removes described second sacrificial material layer, with mineralization pressure sensor cavities;
In described first interlayer dielectric layer, form the first interconnection structure, be connected to be formed with described gyroscope bottom electrode;
Described first interlayer dielectric layer forms MEMS substrate, and form the second interconnection structure in described MEMS substrate, to be connected with described first interconnection structure;
MEMS substrate described in patterning and described first interlayer dielectric layer, to form the 3rd opening, expose described gyroscope sacrificial material layer and the second conductive material layer respectively;
Remove described gyroscope sacrificial material layer, to form gyroscope arrangement;
Cover layer is formed, to form closed space above described gyroscope arrangement above described gyroscope arrangement.
2. method according to claim 1, is characterized in that, the method forming described lamination is:
Depositing first conductive material layer, to fill described first opening, and is connected with described pressure sensor bottom electrode formation;
Described first conductive material layer deposits the second sacrificial material layer, then depositing second conductive material layer in described second sacrificial material layer;
Then the first conductive material layer, the second sacrificial material layer and described second conductive material layer described in patterning, to form described lamination above described pressure sensor bottom electrode.
3. method according to claim 1, is characterized in that, described gyroscope bottom electrode comprises the first electrode and the second electrode that are isolated from each other and arrange, arranges the gyroscope sacrificial material layer be isolated from each other respectively above described first electrode and described second electrode.
4. method according to claim 1, is characterized in that, while described first conductive material layer deposits the second sacrificial material layer, also in described gyroscope sacrificial material layer, deposits the second sacrificial material layer.
5. method according to claim 1, is characterized in that, described first interconnection structure is silicon through hole.
6. method according to claim 1, is characterized in that, is integrated between described MEMS substrate and described first interlayer dielectric layer by the methods combining of bonding.
7. method according to claim 1, is characterized in that, the methods combining by bonding between described cover layer and described gyroscope arrangement is integrated.
8. method according to claim 1, is characterized in that, after described second interconnection structure of formation, is also included on described second interconnection structure and forms metal connecting layer structure, to connect described cover layer.
9. method according to claim 1, is characterized in that, selects ashing method to remove described gyroscope sacrificial material layer and described second sacrificial material layer.
10. method according to claim 1, is characterized in that, the method forming the second interconnection structure in described MEMS substrate is:
Select MEMS substrate described in deep reaction ion etching, to form the 4th opening;
The sidewall of described 4th opening forms separation layer;
Then deposits conductive material in described 4th opening, to form the second interconnect architecture.
11. methods according to claim 1, is characterized in that, described gyroscope sacrificial material layer selects unformed silicon materials;
Described second sacrificial material layer selects unformed silicon materials;
Described first interlayer dielectric layer selects SiO
2;
Described first conductive material layer selects SiGe;
Described second conductive material layer selects SiGe;
Described MEMS substrate selects polysilicon;
Polysilicon, Cu or W is selected in described second interconnection structure.
12. methods according to claim 1, is characterized in that, the thickness of described gyroscope sacrificial material layer is 17K dust;
The thickness of described second sacrificial material layer is 3K dust;
The thickness of described first conductive material layer is 5K dust;
The thickness of described second conductive material is 4K dust;
The thickness of described MEMS substrate is 20-50um;
Described tectal thickness is 200um.
13. 1 kinds of MEMSs prepared according to the method one of claim 1-12 Suo Shu.
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