CN106586948A - MEMS device, preparation method thereof and electronic equipment - Google Patents
MEMS device, preparation method thereof and electronic equipment Download PDFInfo
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- CN106586948A CN106586948A CN201510666707.0A CN201510666707A CN106586948A CN 106586948 A CN106586948 A CN 106586948A CN 201510666707 A CN201510666707 A CN 201510666707A CN 106586948 A CN106586948 A CN 106586948A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 165
- 238000000034 method Methods 0.000 claims abstract description 47
- 239000007769 metal material Substances 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 238000009434 installation Methods 0.000 claims description 7
- 238000009833 condensation Methods 0.000 claims description 5
- 230000005494 condensation Effects 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 3
- 238000000059 patterning Methods 0.000 abstract description 5
- 238000005240 physical vapour deposition Methods 0.000 description 17
- 238000005516 engineering process Methods 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000012212 insulator Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 238000001125 extrusion Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000002194 amorphous carbon material Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910018459 Al—Ge Inorganic materials 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000009916 joint effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00055—Grooves
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
Abstract
The invention relates to an MEMS device, a preparation method thereof, and electronic equipment. The method comprises the steps of: S1 providing an MEMS wafer, on which an MEMS element, an MEMS material layer located on the MEMS element and a patterned bonding material layer located on the MEMS material layer are formed; S2 patterning the MEMS material layer, and forming a trench encircling the bonding material layer on both sides in the MEMS material layer; and S3 providing a covering layer to joint the MEMS wafer through the bonding material layer. According to the invention, overflow of a bonding material ring in the MEMS device can be prevented, and the performance of the MEMS device is improved.
Description
Technical field
The present invention relates to semiconductor applications, in particular it relates to a kind of MEMS and its system
Preparation Method, electronic installation.
Background technology
With the continuous development of semiconductor technology, in the city of sensor (motion sensor) class product
On field, smart mobile phone, integrated CMOS and MEMS (MEMS) device are increasingly becoming most main
Stream, state-of-the-art technology, and with the renewal of technology, the development side of this kind of transmission sensors product
To being the less size of scale, high-quality electric property and lower loss.
Wherein, microelectromechanical systems (MEMS) is in volume, power consumption, weight and in price
With fairly obvious advantage, various different sensors, such as pressure sensing are had been developed over so far
Device, acceleration transducer, inertial sensor and other sensors.
In MEMS fields, when forming MEMS, often in the MEMS
Upper formation coating, commonly uses in the process Al-Ge bonding technologies, and the technique of this high temperature is held very much
It is also easy to produce aluminium extruded to go wrong, makes MEMS disabler.
Currently in order to the method for reducing Al extrusion impacts is long one layer of SiO around Al rings (ring)2
Barrier layer, prevent extrude aluminium and MEMS bascules contact, but methods described can have it is following
Two drawbacks：1st, cost is increased；2nd, the high temperature of silicon dioxide growth can cause cavity fragmentation (cavity
crack)。
Therefore need to be improved further the preparation method of current MEMS, on eliminating
State various drawbacks.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will be in specific embodiment party
Further describe in formula part.The Summary of the present invention is not meant to attempt to limit
Go out the key feature and essential features of technical scheme required for protection, more do not mean that and attempt really
The protection domain of fixed technical scheme required for protection.
The present invention is in order to overcome the problem of presently, there are, there is provided a kind of preparation method of MEMS,
Including：
Step S1：There is provided MEMS wafer, be formed with the MEMS wafer MEMS element,
MEMS material layer in the MEMS element and the figure on the MEMS material layer
The bonding material layer of case；
Step S2：The MEMS material layer is patterned, with the key described in the MEMS material layer
The both sides of condensation material layer form the groove around the bonding material layer；
Step S3：Coating is provided, to connect with the MEMS wafer by the bonding material layer
Close.
Alternatively, in step S2, the MEMS material layer is patterned, to form described
The top of the MEMS element described in the MEMS material layer forms moving mass block while groove.
Alternatively, step S2 includes：
Step S21：Mask layer is formed on the MEMS material layer and is patterned, to form groove figure
Some openings are formed in case and the mask layer above the MEMS element；
Step S22：MEMS material layer described in the mask layer as mask etch, to form the ditch
Groove and the moving mass block.
Alternatively, bonding material layer structure in a ring, positioned at the edge of the MEMS material layer.
Alternatively, the MEMS element includes some bottom electrodes, and on the bottom electrode
The interconnection architecture of side.
Present invention also offers a kind of MEMS, including：
MEMS wafer；
MEMS element, in the MEMS wafer；
Moving mass block, in the MEMS material layer above the MEMS element；
Bonding material layer, positioned at the edge top of the MEMS material layer；
Groove, in the MEMS material layer on the outside of the moving mass block and positioned at the bonding
The both sides of material layer；
Coating, engages with the bonding material layer.
Alternatively, the MEMS also includes：
Cavity, between the MEMS element and the moving mass block.
Alternatively, the groove is located in the MEMS material layer of the cavity upper outer.
Alternatively, the MEMS element includes bottom electrode and connecing above the bottom electrode
Contact hole, the contact hole is electrically connected with the bonding material layer.
Alternatively, the bonding material layer selects metal material.
Present invention also offers a kind of electronic installation, including above-mentioned MEMS.
In order to solve problems of the prior art, there is provided a kind of preparation side of MEMS
Method, after MEMS element is formed in MEMS wafer, forms above the MEMS element
There is a MEMS material layer, pattern while the MEMS material layer forms moving mass block in institute
State in the MEMS material layer below bonding material layer and form groove, to surround the bonding material
Layer, by forming a ditch between bonding material layer Al rings (ring) and MEMS moving mass blocks
Groove, the Al for making extrusion enters groove, prevents from being contacted with MEMS bascules.
The present invention has advantages below：
(1) it is prevented from the excessive of bonding material ring in MEMS.
(2) performance of MEMS can be improved.
Description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.In accompanying drawing
Embodiments of the invention and its description are shown, for explaining the device and principle of the present invention.In accompanying drawing
In,
Fig. 1 a-1c are that the preparation process of MEMS described in the embodiment of the invention is illustrated
Figure；
Fig. 2 is the preparation technology flow process of MEMS described in the embodiment of the invention
Figure.
Specific embodiment
In the following description, a large amount of concrete details are given to provide to the present invention more thoroughly
Understand.It is, however, obvious to a person skilled in the art that the present invention can be without the need for one
Or multiple these details and be carried out.In other examples, in order to avoid obscuring with the present invention,
For some technical characteristics well known in the art are not described.
It should be appreciated that the present invention can be implemented in different forms, and should not be construed as being limited to this
In propose embodiment.On the contrary, providing these embodiments disclosure will be made thoroughly and complete, and will be originally
The scope of invention fully passes to those skilled in the art.In the accompanying drawings, in order to clear, Ceng He areas
Size and relative size may be exaggerated.From start to finish same reference numerals represent identical element.
It should be understood that be referred to as when element or layer " ... on ", " with ... it is adjacent ", " being connected to " or " coupling
Close " other elements or during layer, it can directly on other elements or layer, adjacent thereto, connection
Or other elements or layer are coupled to, or there may be element between two parties or layer.Conversely, when element is claimed
For " on directly existing ... ", " with ... direct neighbor ", " being directly connected to " or " being directly coupled to " other units
When part or layer, then there is no element between two parties or layer.Although it should be understood that can using term first, the
2nd, the various elements of the third description, part, area, floor and/or part, these elements, part, area,
Layer and/or part should not be limited by these terms.These terms be used merely to distinguish element, part,
Area, floor or part and another element, part, area, floor or part.Therefore, without departing from the present invention
Under teaching, the first element discussed below, part, area, floor or part be represented by the second element,
Part, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ",
" ... on ", " above " etc., can describe for convenience here and by using in so as to describe figure
A shown element or feature and other elements or the relation of feature.It should be understood that except shown in figure
Orientation beyond, spatial relationship term is intended to also include the different orientation of device in using and operating.Example
Such as, if the device upset in accompanying drawing, then, it is described as " below other elements " or " its it
Under " or " under it " element or feature will be oriented to other elements or feature " on ".Therefore, example
Property term " ... below " and " ... under " may include it is upper and lower two orientation.Device can additionally take
To (be rotated by 90 ° or other orientation) and spatial description language as used herein is correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as the limit of the present invention
System.When here is used, " one " of singulative, " one " and " described/should " be also intended to include plural number
Form, unless context is expressly noted that other mode.It is also to be understood that term " composition " and/or " including ",
When using in this specification, the feature, integer, step, operation, element and/or part are determined
Presence, but be not excluded for one or more other features, integer, step, operation, element, part
And/or the presence or addition of group.When here is used, term "and/or" includes any of related Listed Items
And all combinations.
In order to thoroughly understand the present invention, detailed step and detailed knot will be proposed in following description
Structure, to explain technical scheme.Presently preferred embodiments of the present invention is described in detail as follows, but
In addition to these detailed descriptions, the present invention can also have other embodiment.
Embodiment one
In order to solve problems of the prior art, the invention provides a kind of preparation of MEMS
Method, below in conjunction with the accompanying drawings 1a-1c methods described is described further, wherein, Fig. 1 a-1c for this
Invent the preparation process schematic diagram of MEMS described in a specific embodiment；Fig. 2 is the present invention one
The preparation technology flow chart of MEMS described in specific embodiment.
First, execution step 101, there is provided MEMS wafer 101, are formed with MEMS on described first
Part, the MEMS material layer 102 in the MEMS element and positioned at the MEMS material
The bonding material layer 103 of the patterning on layer.
Specifically, as shown in Figure 1a, wherein the MEMS wafer 101 at least includes Semiconductor substrate,
The Semiconductor substrate can be at least one in the following material being previously mentioned：Silicon, silicon-on-insulator
(SOI), it is laminated on insulator on silicon (SSOI), insulator and is laminated SiGe (S-SiGeOI), insulation
SiGe (SiGeOI) and germanium on insulator (GeOI) etc. on body.
Cmos device, the cmos device bag are formed with the front of the MEMS wafer 101
Various active devices and/or passive device are included, the species of the cmos device is not limited to a certain kind.
Alternatively, the cmos device is located at the lower section of the MEMS element, described having performed
MEMS technology is performed after CMOS technology in the top of the cmos device.
Wherein, the MEMS element includes bottom electrode, and interconnects positioned at bottom electrode top
Structure.
Formed bottom electrode method be：Dielectric layer is formed in the MEMS wafer, patterning is situated between
Electric layer forms groove, metal material is filled in the trench and forms the electrode.Specifically, institute is patterned
MEMS wafer is stated, the photoresist layer that patterning is for example formed on the dielectric layer (does not show in figure
Go out), the pattern of opening is formed with the photoresist layer, then with the photoresist layer as mask pattern
Change the dielectric layer, to form multiple openings in the dielectric layer.
Fill metal material in said opening, wherein, the metal material can from copper, gold,
Silver, tungsten and other similar materials, preferred metallic copper can pass through physical vapour deposition (PVD) as conductive material
(PVD) method of method or Cu electroplating (ECP) is filled the groove and covers the oxide
Layer, the method for preferred Cu electroplating (ECP) forms the metal material.
The bottom electrode is located at middle part as the bottom electrode of MEMS, positioned at described
Bottom electrode both sides as connection after by formed MEMS top electrodes connection end
Son, electrically connects for the various devices of the MEMS and bottom to be formed.
Cavity is also formed between the top of the bottom electrode and the MEMS material layer 102, institute
The forming method for stating cavity is：Deposited sacrificial material is formed in MEMS wafer and the bottom electrode
The bed of material is simultaneously patterned, to form sacrificial material layer.
The sacrificial material layer can be photoresist, SiO2, N doping silicon carbide layer NDC (Nitrogen
Dopped Silicon Carbite), SiN layer or amorphous carbon material (AC), in the present invention is concrete
Preferred SiO in embodiment2As sacrificial material layer.
Planarisation step is performed after the sacrificial material layer is deposited, semiconductor can be used in the step
Conventional flattening method is realizing the planarization on surface in manufacture field.The flattening method it is unrestricted
Property example include mechanical planarization method and chemically mechanical polishing flattening method.Chemically mechanical polishing is flat
Change method is more often used.
Then the sacrificial material layer is patterned, to form expendable material in the top of the bottom electrode
Layer.
And after the MEMS material layer 102 is deposited or in the MEMS material layer 102
Middle formation remove the sacrificial material layer after opening, to form the cavity.
The MEMS material layer 102 is silicon or polysilicon, preferably, the MEMS material layer
203 is silicon；The thickness of the MEMS material layer 102 is 10-100um, preferably 20-50um.
In the present invention the deposition process of MEMS material layer 102 can for chemical vapor deposition (CVD) method,
The low pressure chemical phase of the formation such as physical vapour deposition (PVD) (PVD) method or ald (ALD) method sinks
One kind in product (LPCVD) and epitaxial growth.
Bonding material layer 103 is formed at the edge of the MEMS material layer 102, wherein the bonding material
The bed of material is electrically connected by through hole with the metal level of the bottom electrode both sides.
Specifically, the deposition process of bonding material layer 103 can for chemical vapor deposition (CVD) method,
The low pressure chemical phase of the formation such as physical vapour deposition (PVD) (PVD) method or ald (ALD) method sinks
One kind in product (LPCVD) and epitaxial growth.
Wherein, the thickness of the bonding material layer 103 is also not limited to a certain number range, can be with root
It is configured according to concrete needs.
Wherein, the bonding material layer 103 can select metal material, in this embodiment, the key
Condensation material layer 103 is from conventional metal material, such as Al.
Then the bonding material layer is patterned, to form loop configuration in the MEMS wafer 101,
Wherein, the bonding material layer of the patterning can be annular or square annular, or polygon ring
The shapes such as shape, not according to existing a certain shape.
Wherein, the bonding material layer is located at the outside of the MEMS wafer, and to surround core space is located at
Device.
Execution step 102, mask layer is formed on the MEMS material layer and is patterned, to form ditch
Some openings are formed in groove pattern and the mask layer above the MEMS element, with the mask
Layer is MEMS material layer described in mask etch, to form the groove 10 while forming the mobile matter
Gauge block.
Specifically, as shown in Figure 1a, mask layer is formed on the MEMS material layer and is patterned,
To form channel patterns and form some openings in the mask layer above the MEMS element, so
After etch the MEMS material layer, to form some openings, expose the sacrificial material layer.
Dry etching can be selected in this step, and CF can be selected in the dry etching4、
CHF3, additionally can in addition add N2、CO2、O2In one kind as etching atmosphere, wherein gas
Body flow is CF410-200sccm, CHF310-200sccm, N2Or CO2Or O210-400sccm,
The etching pressure is 30-150mTorr, and etching period is 5-120s, preferably 5-60s, more preferably
For 5-30s.
Wherein in this step in the MEMS material layer of the bonding material layer both sides simultaneously
Two openings are formed, the groove of bonding material layer is accommodated during using as bonding, make the Al extruded during bonding
Into groove, prevent from being contacted with MEMS bascules.
The bonding material layer both sides formed form groove respectively, wherein, the shape of the groove with
The bonding material layer is corresponding, and it is respectively positioned at the inner or outer side of the bonding material layer.
For example, when the bonding material layer is cirque structure, the groove is cirque structure, and
And the radius of the groove is more than or less than the radius of the bonding material layer, to surround the bonding material
Layer.
Execution step 103, there is provided coating, with by the bonding material layer and the MEMS wafer
Engage.
As illustrated in figure 1 c, wherein, be also formed with the coating corresponding with the bonding material layer
Second bonding material layer.
Alternatively, second bonding material layer selects semi-conducting material, such as Ge.
Even if the bonding material layer described in bonding process in MEMS wafer is melted, then melt
The metal for melting can enter the groove, will not occur excessive, and the groove successfully avoids the bonding
Material layer it is excessive.
Alternatively, the bonding method can select the method bonding of eutectic bonding or thermal bonding, with shape
All-in-one-piece structure.
Before the engagement, can also include carrying out prerinse to the MEMS wafer 101, to carry
The Joint Properties of the high MEMS wafer 101.Specifically, hydrofluoric acid in this step to dilute
DHF is (wherein comprising HF, H2O2And H2O) surface of the MEMS wafer 101 is carried out pre-
Cleaning, wherein, the concentration of the DHF is not strictly limited, in the present invention preferably
HF:H2O2:H2O=0.1-1.5:1:5.
In addition, after cleaning step has been performed, methods described still further comprises the MEMS is brilliant
The process that circle 101 is dried.
Alternatively, the MEMS wafer 101 is dried from isopropanol (IPA).
So far, the introduction of the correlation step of the MEMS preparation of the embodiment of the present invention is completed.Upper
After stating step, other correlation steps can also be included, here is omitted.Also, except above-mentioned step
Outside rapid, the preparation method of the present embodiment can be among above-mentioned each step or between different step
Including other steps, these steps can be realized by various techniques of the prior art, herein not
Repeat again.
In order to solve problems of the prior art, there is provided a kind of preparation side of MEMS
Method, after MEMS element is formed in MEMS wafer, forms above the MEMS element
There is a MEMS material layer, pattern while the MEMS material layer forms moving mass block in institute
State in the MEMS material layer below bonding material layer and form groove, to surround the bonding material
Layer, by forming a ditch between bonding material layer Al rings (ring) and MEMS moving mass blocks
Groove, the Al for making extrusion enters groove, prevents from being contacted with MEMS bascules.
The present invention has advantages below：
(1) it is prevented from the excessive of bonding material ring in MEMS.
(2) performance of MEMS can be improved.
Fig. 2 is the preparation technology flow chart of MEMS described in the embodiment of the invention,
Specifically include following steps：
Step S1：There is provided MEMS wafer, be formed with the MEMS wafer MEMS element,
MEMS material layer in the MEMS element and the figure on the MEMS material layer
The bonding material layer of case；
Step S2：The MEMS material layer is patterned, with the key described in the MEMS material layer
The both sides of condensation material layer form the groove around the bonding material layer；
Step S3：Coating is provided, to connect with the MEMS wafer by the bonding material layer
Close.
Embodiment two
Present invention also offers a kind of MEMS, the MEMS is by embodiment 1
Methods described is prepared, and the device includes：
MEMS wafer 101；
MEMS element, in the MEMS wafer；
Moving mass block 102, in the MEMS material layer above the MEMS element；
Bonding material layer 103, positioned at the edge of the moving mass block；
Groove 10, in the MEMS material layer on the outside of the moving mass block and positioned at the bonding
The both sides of material layer；
Coating 105, engages with the bonding material layer.
Wherein described MEMS wafer 101 at least includes Semiconductor substrate, and the Semiconductor substrate can be
At least one in the material being below previously mentioned：Silicon is laminated on silicon, silicon-on-insulator (SOI), insulator
(SSOI), on insulator be laminated SiGe (S-SiGeOI), germanium on insulator SiClx (SiGeOI) with
And germanium on insulator (GeOI) etc..
Cmos device, the cmos device bag are formed with the front of the MEMS wafer 101
Various active devices and/or passive device are included, the species of the cmos device is not limited to a certain kind.
Alternatively, the cmos device is located at the lower section of the MEMS element, described having performed
MEMS technology is performed after CMOS technology in the top of the cmos device.
Wherein, the MEMS element includes bottom electrode, and interconnects positioned at bottom electrode top
Structure.
The bottom electrode includes being located at the part of centre and the part of both sides, wherein positioned at middle portion
The bottom electrode for MEMS is allocated as, will after the conduct connection of the bottom electrode both sides
The connection terminal of the top electrodes of the MEMS of formation, for by the MEMS and bottom
The various devices in portion form electrical connection.
The bottom electrode selects metal material, wherein, the metal material can from copper, gold,
Silver, tungsten and other similar materials, preferred metallic copper can pass through physical vapour deposition (PVD) as conductive material
(PVD) method of method or Cu electroplating (ECP) is filled the groove and covers the oxide
Layer, the method for preferred Cu electroplating (ECP) forms the metal material.
The MEMS material layer 102 is silicon or polysilicon, preferably, the MEMS material layer
203 is silicon；The thickness of the MEMS material layer 102 is 10-100um, preferably 20-50um.
In the present invention the deposition process of MEMS material layer 102 can for chemical vapor deposition (CVD) method,
The low pressure chemical phase of the formation such as physical vapour deposition (PVD) (PVD) method or ald (ALD) method sinks
One kind in product (LPCVD) and epitaxial growth.
Bonding material layer 103 is formed with the edge of the MEMS material layer 102, wherein the bonding
Material layer is electrically connected by through hole with the metal level of the bottom electrode both sides.
Specifically the deposition process of bonding material layer 103 can be chemical vapor deposition (CVD) method, thing
The low-pressure chemical vapor deposition of the formation such as physical vapor deposition (PVD) method or ald (ALD) method
(LPCVD) one kind and in epitaxial growth.
Wherein, the thickness of the bonding material layer 103 is also not limited to a certain number range, can be with root
It is configured according to concrete needs.
Wherein, the bonding material layer 103 can select metal material, in this embodiment, the key
Condensation material layer 103 is from conventional metal material, such as Al.
The MEMS is still further comprised：Cavity, positioned at the MEMS element and the shifting
Between kinoplaszm gauge block.
Wherein, form two simultaneously in the MEMS material layer of the bonding material layer both sides to open
Mouthful, the groove of bonding material layer is accommodated during using as bonding, make the Al extruded during bonding enter groove,
Prevent from being contacted with MEMS bascules.
Wherein, the shape of the groove is corresponding with the bonding material layer, and it is located at respectively the bonding
The inner or outer side of material layer.
For example, when the bonding material layer is cirque structure, the groove is cirque structure, and
And the radius of the groove is more than or less than the radius of the bonding material layer, to surround the bonding material
Layer.
Coating, is engaged by the bonding material layer with the MEMS wafer.
As illustrated in figure 1 c, wherein, be also formed with the coating corresponding with the bonding material layer
Second bonding material layer.
Alternatively, second bonding material layer selects semi-conducting material, such as Ge.
Even if the bonding material layer described in bonding process in MEMS wafer is melted, then melt
The metal for melting can enter the groove, will not occur excessive, and the groove successfully avoids the bonding
Material layer it is excessive.
The MEMS material in MEMS of the present invention below the bonding material layer
Groove is formed with layer, to surround the bonding material layer, by bonding material layer Al rings (ring)
A groove is formed and MEMS moving mass blocks between, the Al for making extrusion enters groove, prevent and
MEMS bascules are contacted.
The present invention has advantages below：
(1) it is prevented from the excessive of bonding material ring in MEMS.
(2) performance of MEMS can be improved.
Embodiment three
Present invention also offers a kind of electronic installation, including the MEMS described in embodiment two.Wherein,
Semiconductor devices is the MEMS described in embodiment two, or the preparation method according to embodiment one
The MEMS for obtaining.
The electronic installation of the present embodiment, can be mobile phone, panel computer, notebook computer, net book,
Game machine, television set, VCD, DVD, navigator, camera, video camera, recording pen, MP3,
Any electronic product such as MP4, PSP or equipment, alternatively any centre including the MEMS
Product.The electronic installation of the embodiment of the present invention, due to having used above-mentioned MEMS, thus has
Better performance.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment
Citing and descriptive purpose are only intended to, and are not intended to limit the invention to described scope of embodiments
It is interior.In addition it will be appreciated by persons skilled in the art that the invention is not limited in above-described embodiment, root
More kinds of variants and modifications can also be made according to the teachings of the present invention, these variants and modifications all fall within this
Within inventing scope required for protection.Protection scope of the present invention is by the appended claims and its waits
Effect scope is defined.
Claims (11)
1. a kind of preparation method of MEMS, including：
Step S1：There is provided MEMS wafer, be formed with the MEMS wafer MEMS element,
MEMS material layer in the MEMS element and the figure on the MEMS material layer
The bonding material layer of case；
Step S2：The MEMS material layer is patterned, with the key described in the MEMS material layer
The both sides of condensation material layer form the groove around the bonding material layer；
Step S3：Coating is provided, to connect with the MEMS wafer by the bonding material layer
Close.
2. method according to claim 1, it is characterised in that in step S2, pattern
Change the MEMS material layer, with formed the groove while in the MEMS material layer institute
The top for stating MEMS element forms moving mass block.
3. method according to claim 2, it is characterised in that step S2 includes：
Step S21：Mask layer is formed on the MEMS material layer and is patterned, to form groove figure
Some openings are formed in case and the mask layer above the MEMS element；
Step S22：MEMS material layer described in the mask layer as mask etch, to form the ditch
Groove and the moving mass block.
4. method according to claim 1, it is characterised in that the bonding material layer is tied in a ring
Structure, positioned at the edge of the MEMS material layer.
5. method according to claim 1, it is characterised in that if the MEMS element includes
Dry bottom electrode, and the interconnection architecture above the bottom electrode.
6. a kind of MEMS, including：
MEMS wafer；
MEMS element, in the MEMS wafer；
Moving mass block, in the MEMS material layer above the MEMS element；
Bonding material layer, positioned at the edge top of the MEMS material layer；
Groove, in the MEMS material layer on the outside of the moving mass block and positioned at the bonding
The both sides of material layer；
Coating, engages with the bonding material layer.
7. MEMS according to claim 6, it is characterised in that the MEMS
Also include：
Cavity, between the MEMS element and the moving mass block.
8. MEMS according to claim 7, it is characterised in that the groove is located at institute
In stating the MEMS material layer of cavity upper outer.
9. MEMS according to claim 6, it is characterised in that the MEMS element
Including bottom electrode and the contact hole above the bottom electrode, the contact hole is bonded with described
Material layer is electrically connected.
10. MEMS according to claim 6, it is characterised in that the bonding material layer
From metal material.
A kind of 11. electronic installations, including the MEMS described in one of claim 6 to 10.
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